KR20110036143A - Apparatus for solar power generation and method of fabricating the same - Google Patents

Abstract

PURPOSE: A solar power generating device and manufacturing method are provided to absorb heat generated from a solar cell, thereby increasing electrical features of the solar cell. CONSTITUTION: A solar cell includes a rear side electrode layer(120), an optical absorption layer(130), and a window layer. A first heat conductive layer(210) is formed on the window layer. A thermoelectric element comprises a first electrode, a second electrode, a pair of p-type semiconductors, a pair of n-type semiconductors, and a third electrode. The first electrode and the second electrode are formed on the first heat conductive layer. The p-type semiconductors and the n-type semiconductors are formed on the first and second electrodes respectively and separated each other. The third electrode is connected to an n-type semiconductors of the first electrode and a p-type semiconductor of the second electrode.

Description

Photovoltaic device and its manufacturing method {APPARATUS FOR SOLAR POWER GENERATION AND METHOD OF FABRICATING THE SAME}

Embodiments relate to a photovoltaic device and a method of manufacturing the same.

Recently, as the demand for energy increases, development of solar cells for converting solar energy into electrical energy is in progress.

The basic principle of a solar cell is a structure in which a p-type semiconductor and an n-type semiconductor are bonded to each other to generate electricity by photoelectric effect when light is received on the surface of the solar cell.

Solar energy can be classified into light energy and heat energy. Since a general solar cell module generates electricity using only light energy, heat energy cannot be used.

This thermal energy has a problem of causing power loss by increasing the resistance value flowing inside the solar cell.

In addition, the solar cell is overheated for a long time due to the heat of the sunlight itself, thereby reducing the electricity generation efficiency.

The embodiment provides a photovoltaic device capable of effectively absorbing heat generated from a solar cell and a method of manufacturing the same.

In addition, the embodiment provides a solar cell and a method of manufacturing the same that can generate photovoltaic and thermal electromotive force.

The solar cell apparatus according to the embodiment includes a solar cell including a back electrode layer, a light absorbing layer, and a window layer stacked on a substrate; A first heat conducting layer formed on the window layer: and a thermoelectric element comprising a p-type semiconductor and an n-type semiconductor on the heat conductive layer.

Embodiments provide a method of manufacturing a photovoltaic device comprising: stacking a back electrode layer, a light absorbing layer, and a window layer on a substrate; Forming a first thermal conductive layer on the window layer: forming a first electrode and a second electrode separated from each other on the first thermal conductive layer; Forming a pair of p-type semiconductor and n-type semiconductor on each of the first electrode and the second electrode; And a third electrode formed on the n-type semiconductor of the first electrode and the p-type semiconductor of the second electrode.

According to an embodiment, a thermoelectric element is formed on a solar cell.

The solar cell and the thermoelectric element may be integrally formed.

The thermoelectric element may absorb heat generated during power generation through light absorption.

Accordingly, the heat generated during the operation of the solar cell by the endothermic reaction by the thermoelectric element can be suppressed, and the performance of the solar cell can be improved.

The thermoelectric element may generate power through heat absorption of the solar cell. In addition, the thermoelectric element may generate power by absorbing thermal energy of sunlight.

Accordingly, by generating additional power by the thermoelectric element it is possible to improve the electrical performance of the photovoltaic device.

In the description of the embodiments, where each substrate, layer, film, or electrode is described as being formed "on" or "under" of each substrate, layer, film, or electrode, etc. , "On" and "under" include both "directly" or "indirectly" formed through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

9 is a sectional view showing a solar cell apparatus according to an embodiment.

Referring to FIG. 9, the solar cell apparatus includes a solar cell 100 and a thermoelectric element 200.

The solar cell 100 includes a back electrode layer 120, a light absorbing layer 130, a buffer layer 140, and a window layer 160 stacked on the substrate 110.

The substrate 110 may be transparent and have a plate shape. In addition, the substrate 110 may be rigid or flexible.

The substrate 110 may be an insulator. The substrate 110 may be a glass substrate, a plastic substrate, or a metal substrate.

In more detail, the substrate 110 may be a soda lime glass substrate.

The back electrode layer 120 is disposed on the substrate 110. The back electrode layer 120 is a conductive layer. Molybdenum metal may be used as an example of the material used as the back electrode layer 120.

The light absorbing layer 130 is disposed on the back electrode layer 120. The light absorbing layer 130 includes a group I-III-VI compound. For example, the light absorbing layer 130 may be formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se ₂ , CIGS-based) crystal structure, copper-indium-selenide-based, or copper-gallium-selenide It may have a system crystal structure.

The energy band gap of the light absorbing layer 130 may be about 1 eV to 1.8 eV.

The buffer layer 140 is disposed on the light absorbing layer 130. The buffer layer 140 includes cadmium sulfide (CdS), and the energy band gap of the buffer layer 140 is about 2.2 eV to 2.4 eV.

The high resistance buffer layer 150 is disposed on the buffer layer 140. The high resistance buffer layer 150 includes zinc oxide (i-ZnO) that is not doped with impurities. The energy band gap of the high resistance buffer layer 150 is about 3.1 eV to 3.3 eV.

The window layer 160 is disposed on the high resistance buffer layer 150. The window layer 160 is transparent and is a conductive layer. The resistance of the window layer 160 may be higher than the back electrode layer 120. Examples of the material used as the window layer 160 include aluminum doped zinc oxide (Al doped ZnO).

The solar cell 100 may generate photovoltaic energy by absorbing sunlight by the light absorbing layer 130.

The thermoelectric element 200 is disposed on the window layer 160 of the solar cell 100.

The thermoelectric element 200 may include the first thermal conductive layer 210, the lower electrodes 230 and 240, the p-type semiconductor 250, the n-type semiconductor 260 and the upper electrode disposed on the window layer 160. 270).

The first thermal conductive layer 210 may be formed of a transparent insulating material. The first thermal conductive layer 210 may be formed of a material having high thermal conductivity.

For example, the first thermal conductive layer 210 may be a ceramic-based material including Al ₂ O ₃ .

Since the first thermal conductive layer 210 is disposed between the window layer 160 and the lower electrodes 230 and 240, an electrical short between the solar cell 100 and the thermoelectric element 200 may be prevented. have.

The lower electrodes 230 and 240 may be formed on a plurality of patterns on the first thermal conductive layer 210.

The lower electrodes 230 and 240 may be formed of a transparent conductive material. For example, the lower electrodes 230 and 240 include indium tin oxide (ITO). Alternatively, the lower electrodes 230 and 240 may be formed of ITO-Ag-ITO.

In the exemplary embodiment, the lower electrodes 230 and 240 adjacent to each other are referred to as the first electrode 230 and the second electrode 240. That is, the first electrode 230 and the second electrode 240 may be electrically and physically separated from each other.

The p-type semiconductor 250 and the n-type semiconductor 260 may be formed in a pair, and may be formed spaced apart from each other on the first electrode 230 and the second electrode 240.

That is, the p-type semiconductor 250 and the n-type semiconductor 260 may be alternately arranged. In addition, the n-type semiconductor 260 of the first electrode 230 and the p-type semiconductor 250 of the second electrode 240 adjacent to each other are disposed to be spaced apart from each other.

The p-type semiconductor 250 and the n-type semiconductor 260 may be formed of a transparent material.

For example, the p-type semiconductor 250 is BiO, 5Sb ₁ And 5Te ₃ . The n-type semiconductor 260 may be any one of SnO ₂ : Fe, Bi ₂ Te _2, and 7SeO ₃ .

The p-type semiconductor 250 and the n-type semiconductor 260 may be formed in a thin film or nanowire form so as not to affect absorption of sunlight incident to the solar cell 100.

The upper electrode 270 is formed on the n-type semiconductor 260 of the first electrode 230 and the p-type semiconductor 250 of the second electrode 240 and n of the first electrode 230. The p-type semiconductor 250 of the type semiconductor 260 and the second electrode 240 may be electrically connected to each other.

That is, the p-type semiconductors 250 and the n-type semiconductors 260 may be electrically and physically connected by the upper electrode 270.

The upper electrode 270 may be formed of a transparent conductive material. For example, the upper electrode 270 includes indium tin oxide (ITO). Alternatively, the upper electrode 270 may be formed of ITO-Ag-ITO.

The second thermal conductive layer 280 is formed on the upper electrode 270. The second thermal conductive layer 280 may protect the lower p-type semiconductor 250, the n-type semiconductor 260, the upper electrode 270, and the lower electrodes 230 and 240. The second thermal conductive layer 280 may be formed of the same material as the first thermal conductive layer 210.

In addition, external voltages may be applied to both ends of the lower electrodes 230 and 240 or the upper electrode 270 of the thermoelectric element 200.

The thermoelectric element 200 formed as described above may absorb heat generated from the solar cell 100 to improve the efficiency of the solar cell.

The thermoelectric element 200 may generate thermoelectric power by absorbing heat energy of solar light or heat of a solar cell.

The thermoelectric device 200 uses the Peltier effect and the seed back, and has a cooling effect in a small electronic device by controlling the magnitude and time of the current supplied to the thermoelectric device. .

Here, to briefly explain the Peltier effect, when the electron flows through the semiconductor, the electrons in the Fermi level of the metal must move to the conduction band of the semiconductor. Thus, conduction electrons must increase their average kinetic energy as they move from metal to semiconductor. This change in kinetic energy is due to the absorption of heat, and this heat or thermal energy is used to increase the average kinetic energy of the electron. If more current flows, the kinetic energy of the electrons will decrease and generate heat associated with it. As the electrons pass through the junction, their average kinetic energy changes, so it can be seen that heat is absorbed or generated depending on the direction of the current.

Such a reversible Peltier effect always occurs when a current flows. The thermoelectric device using the Peltier phenomenon is a semiconductor device, and when two types of different metals, that is, a p-type semiconductor 250 and an n-type semiconductor 260 are bonded to each other and a current flows, heat generated in proportion to the current of the junction portion or Absorption occurs and changing the direction of current causes heat generation and absorption reverse. The thermoelectric element has a small size, can be directly cooled by a power supply, and can be cooled and heated by a simple pole switching switch.

As described above, by generating a photovoltaic power and a thermoelectric power at the same time by a photovoltaic device having a solar cell and a thermoelectric element can improve the power generation efficiency.

In addition, since the heat inside the solar cell can be lowered, the power generation efficiency of the solar cell can be improved.

1 to 9, a method of manufacturing the solar cell apparatus according to the embodiment will be described in detail. The description of one solar cell apparatus may be combined with the method of manufacturing the solar cell apparatus according to the present embodiment.

Referring to FIG. 1, a back electrode layer 120 is formed on a substrate 110.

The substrate 110 may be glass, and a ceramic substrate, a metal substrate, or a polymer substrate may also be used.

For example, soda lime glass (sodalime galss) or high strained soda glass (high strained point soda glass) may be used as the glass substrate. As the metal substrate, a substrate including stainless steel or titanium may be used. As the polymer substrate, polyimide may be used.

The substrate 110 may be transparent. The substrate 110 may be rigid or flexible.

The back electrode layer 120 may be formed of a conductor such as metal.

For example, the back electrode layer 120 may be formed by a sputtering process using molybdenum (Mo) as a target.

This is because of the high electrical conductivity of molybdenum (Mo), ohmic bonding with the light absorbing layer, and high temperature stability under Se atmosphere.

The molybdenum thin film as the back electrode layer 120 should have a low specific resistance as an electrode, and have excellent adhesion to the substrate 110 so that peeling does not occur due to a difference in thermal expansion coefficient.

Meanwhile, the material forming the back electrode layer 120 is not limited thereto, and may be formed of molybdenum (Mo) doped with sodium (Na) ions.

Although not shown in the drawing, the back electrode layer 120 may be formed of at least one layer. When the back electrode layer 120 is formed of a plurality of layers, the layers constituting the back electrode layer 120 may be formed of different materials.

For example, the back electrode layer 120 may have a high adhesion and relatively low conductivity to the substrate 110 and a layer having high electrical conductivity.

Referring to FIG. 2, a light absorbing layer 130 is formed on the back electrode layer 120. The light absorbing layer 130 includes an Ib-IIIb-VIb-based compound.

In more detail, the light absorption layer 130 includes a copper-indium-gallium-selenide-based (Cu (In, Ga) Se ₂ , CIGS-based) compound. Alternatively, the light absorbing layer 130 may include a copper-indium selenide-based (CuInSe ₂ , CIS-based) compound or a copper-gallium-selenide-based (CuGaSe ₂ , CIS-based) compound.

For example, in order to form the light absorbing layer 130, a CIG-based metal precursor film is formed on the back electrode layer 120 using a copper target, an indium target, and a gallium target.

Thereafter, the metal precursor film is reacted with selenium (Se) by a selenization process to form a CIGS-based light absorbing layer 130.

In addition, the light absorbing layer 130 may form copper, indium, gallium, selenide (Cu, In, Ga, Se) by co-evaporation.

The light absorbing layer 130 receives external light and converts the light into electrical energy. The light absorbing layer 130 generates photo electromotive force by the photoelectric effect.

 The buffer layer 140 and the high resistance buffer layer 150 are formed on the light absorbing layer 130.

The buffer layer 140 may be formed of at least one or more layers on the light absorbing layer 130, and may be formed of cadmium sulfide (CdS) by chemical bath deposition (CBD).

In this case, the buffer layer 140 is an n-type semiconductor layer, the light absorbing layer 130 is a p-type semiconductor layer. Accordingly, the light absorbing layer 130 and the buffer layer 140 form a pn junction.

The high resistance buffer layer 150 may be formed as a transparent electrode layer on the buffer layer 140.

For example, the high resistance buffer layer 150 may be formed of any one of ITO, ZnO, and i-ZnO.

The high resistance buffer layer 150 may be formed of a zinc oxide layer by performing a sputtering process targeting zinc oxide (ZnO).

The buffer layer 140 and the high resistance buffer layer 150 are disposed between the light absorbing layer 130 and the window layer to be formed later.

That is, since the difference between the lattice constant and the energy band gap is large between the light absorbing layer 130 and the window layer 160, the buffer layer 140 and the high resistance buffer layer 150 having a band gap between the two materials are separated. Can be inserted to form a good bond.

Although two buffer layers 140 are formed on the light absorbing layer 130 in this embodiment, the present invention is not limited thereto, and the buffer layer 140 may be formed as a single layer.

The window layer 160 is formed on the high resistance buffer layer 150.

The window layer 160 is formed of zinc oxide doped with aluminum (Al) or alumina (Al ₂ O ₃ ) through a sputtering process.

Since the window layer 160 forms a pn junction with the light absorbing layer 130 and functions as a transparent electrode on the front of the solar cell, the window layer 160 may be formed of zinc oxide (ZnO) having high light transmittance and good electrical conductivity.

Accordingly, the window layer 160 may form an electrode having a low resistance value by doping aluminum oxide or alumina to zinc oxide.

The zinc oxide thin film that is the window layer 160 may be formed by a method of depositing using a ZnO target by RF sputtering, a reactive sputtering using a Zn target, an organometallic chemical vapor deposition method, or the like.

In addition, a double structure in which an indium tin oxide (ITO) thin film having excellent electro-optic properties is deposited on a zinc oxide thin film may be formed.

Referring to FIG. 3, a first heat conductive layer 210 is formed on the window layer 160.

The first thermal conductive layer 210 may be formed of a transparent insulating film.

For example, the first thermal conductive layer 210 may be formed of a ceramic series including Al ₂ O ₃ . The first thermal conductive layer 210 may be formed through a deposition or bonding process.

The first heat conductive layer 210 may be formed of a transparent ceramic material, and sunlight may be incident on the light absorbing layer 130.

Referring to FIG. 4, a lower electrode layer 220 is formed on the first thermal conductive layer 210.

The lower electrode layer 220 may be formed of a transparent electrode layer.

For example, the lower electrode layer 220 may be formed of indium tin oxide (ITO). Alternatively, the lower electrode layer 220 may be formed of an alloy film of ITO-Ag-ITO.

The lower electrode layer 220 may be formed on the first thermal conductive layer 210 by a CVD or PVD process.

Since the first thermal conductive layer 210, which is an insulating material, is formed between the lower electrode layer 220 and the window layer 160, an electrical short circuit characteristic may be improved.

In addition, the lower electrode layer 220 may be formed as a transparent electrode layer so that sunlight may be incident on the light absorbing layer 130.

Referring to FIG. 5, the lower electrode layer 220 is patterned, and a plurality of lower electrodes 230 and 240 separated from each other are formed.

For example, the lower electrodes 230 and 240 are referred to as a first electrode 230 and a second electrode 240 adjacent to the first electrode 230. The first electrode 230 and the second electrode 240 may be electrically and physically separated from each other.

For example, the first electrode 230 and the second electrode 240 may be selectively formed through a photolithography or an etching process on the lower electrode layer 220.

Referring to FIG. 6, p-type semiconductors 250 are formed on the first electrode 230 and the second electrode 240, respectively.

The p-type semiconductor 250 may be formed to be aligned with one side of the first electrode 230 and the second electrode 240.

For example, the p-type semiconductor 250 may include a semiconductor layer including p-type impurities on the first thermal conductive layer 210 including the first electrode 230 and the second electrode 240. Then, it may be formed through a photolithography process.

For example, the p-type semiconductor 250 may be formed of any one of BiO, 5Sb _1, and 5Te ₃ .

The p-type semiconductor 250 may be transparent.

Referring to FIG. 7, an n-type semiconductor 260 is formed on the first electrode 230 and the second electrode 240.

The n-type semiconductor 260 may be formed to be aligned with the other side of the first electrode 230 and the second electrode 240.

For example, the n-type semiconductor 260 is formed by forming a semiconductor layer containing n-type impurities on the first thermal conductive layer 210 including the first electrode 230 and the second electrode 240. Then, it may be formed through a photolithography process.

For example, the n-type semiconductor 260 may be formed of any one of SnO ₂ : Fe, Bi ₂ Te _2, and 7SeO ₃ .

The p-type semiconductor 250 and the n-type semiconductor 260 may be formed of a transparent semiconductor layer so that sunlight may be incident on the light absorbing layer 130.

In particular, the p-type and n-type semiconductors 250 and 260 may be formed in a thin film form and a nanowire form so that absorption of sunlight is not affected by absorption into the solar cell.

A pair of p-type and n-type semiconductors 250 and 260 may be formed on the first electrode 230 and the second electrode 240. Accordingly, the p-type semiconductor 250 and the n-type semiconductor 260 may be alternately arranged.

In addition, the pair of p-type semiconductors 250 and n-type semiconductors 260 formed on the first electrode 230 and the second electrode 240 may be spaced apart to have a first gap G1.

The p-type semiconductor 250 of the second electrode 240 adjacent to the n-type semiconductor 260 of the first electrode 230 is spaced apart from the n-type semiconductor 260 to have a second gap G2. Can be.

For example, the first gap G1 and the second gap G2 may have the same width.

That is, the first electrode 2300 and the second electrode 240 are in an electrically separated state.

Meanwhile, the p-type semiconductor 250 and the n-type semiconductor 260 are formed through a selective etching process after forming the corresponding semiconductor layers, respectively, but the p-type semiconductor 250 and the n-type semiconductor 260 ) May be formed through p-type and n-type impurity ion implantation processes after depositing a transparent conductive film.

Referring to FIG. 8, an upper electric field is formed on the n-type semiconductor 260 of the first electrode 230 and the p-type semiconductor 250 of the second electrode 240 separated from each other by the second gap G2. The pole 270 is formed.

The upper electrode 270 may be formed of the same transparent electrode layer as the lower electrodes 230 and 240.

The upper electrode 270 may electrically connect the n-type semiconductor 260 and the p-type semiconductor 250 which are separated from each other by the second gap G2.

The p-type semiconductor 250 and the n-type semiconductor 260 may be electrically and physically connected to each other by the upper electrodes 270 and the lower electrodes 230 and 240.

That is, the p-type and n-type semiconductors 250 and 260 of the first electrode 230 and the second electrode 240 may be electrically connected in series and thermally connected in parallel.

The thermoelectric element 200 may be formed by a metal junction between the p-type semiconductor 250 and the n-type semiconductor 260.

Referring to FIG. 9, a second thermal conductive layer 280 is formed on the upper electrode 270.

The second thermal conductive layer 280 may be formed of the same ceramic material as the first thermal conductive layer 210.

The second thermal conductive layer 280 may protect the thermoelectric element 200 and the solar cell 100.

The second thermal conductive layer 280 may transfer thermal energy of sunlight to the p-type semiconductor 250 and the n-type semiconductor 260.

Although not shown, the first thermal conductive layer 210 and the second thermal conductive layer 280 may be formed to contact each other.

Thereafter, contact wirings may be formed at both ends of the lower electrodes 230 and 240 in order to apply external voltages of positive and negative voltages to the thermoelectric element 200.

When direct current (Diret Current) is flowed into the thermoelectric element 200 formed as described above, heat absorption occurs in the thermoelectric semiconductor composed of thermocouples electrically and in series.

Since the thermoelectric element 200 moves electrons and holes from the high end to the low end, respectively, in the n-type semiconductor 260 and the p-type semiconductor 250 when the heat moves from the hot end region to the cold end region due to the temperature difference at both ends. Could be developed.

In the embodiment, a thermoelectric element is formed on a solar cell.

The solar cell may produce photovoltaic power by sunlight.

The thermoelectric device may produce thermoelectric power by solar light.

The thermoelectric element may absorb heat generated during power generation through light absorption.

Accordingly, the heat generated during the operation of the solar cell by the endothermic reaction by the thermoelectric element can be suppressed, and the performance of the solar cell can be improved.

Also. The thermoelectric element may generate power through heat absorption. In addition, the thermoelectric element may generate power by absorbing thermal energy of sunlight.

Accordingly, by generating additional power by the thermoelectric element it is possible to improve the electrical performance of the photovoltaic device.

Although described above with reference to the embodiment is only an example and is not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of this embodiment It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 to 9 are sectional views showing the manufacturing process of the solar cell apparatus according to the embodiment.

Claims (14)

A solar cell including a back electrode layer, a light absorbing layer, and a window layer stacked on a substrate; A first heat conducting layer formed on the window layer: and The photovoltaic device comprising a thermoelectric element consisting of a p-type semiconductor and an n-type semiconductor on the heat conductive layer. The method of claim 1, The thermoelectric element, First and second electrodes formed on the first thermal conductive layer; A pair of p-type semiconductors and n-type semiconductors formed on the first and second electrodes, respectively, and spaced apart from each other; And a third electrode formed over the n-type semiconductor of the first electrode and the p-type semiconductor of the second electrode. The method of claim 1, A photovoltaic device comprising a second thermal conductive layer formed on the thermoelectric element. The method of claim 1, The first thermal conductive layer and the second thermal conductive layer is a solar cell apparatus formed of a ceramic-based material which is a transparent insulating film. The method of claim 1, The first electrode, the second electrode and the third electrode is a solar power generation device formed of indium tin oxide (ITO) -Ag-ITO (indium tin oxide). The method of claim 1, The p-type semiconductor is formed of any one of BiO, 5Sb ₁ and 5Te ₃ , wherein the n-type semiconductor is formed of any one of SnO ₂ : Fe, Bi ₂ Te and 7SeO ₃ . The method of claim 1, The p-type semiconductor and the n-type semiconductor is a photovoltaic device formed in the form of a thin film or nanowire of a transparent property. The method of claim 1, One end of the thermoelectric element is connected to the positive electrode, the other end is connected to the negative electrode, Photovoltaic device comprising transmitting the thermoelectric power generated by the thermoelectric element to the control unit. Stacking a back electrode layer, a light absorbing layer and a window layer on the substrate; Forming a first thermal conductive layer on the window layer: Forming a first electrode and a second electrode separated from each other on the first heat conductive layer; Forming a pair of p-type semiconductor and n-type semiconductor on each of the first electrode and the second electrode; And And a third electrode formed over the n-type semiconductor of the first electrode and the p-type semiconductor of the second electrode. 10. The method of claim 9, And forming a second heat conductive layer formed on the third electrode so as to correspond to the first heat conductive layer. 10. The method of claim 9, The p-type semiconductor is formed of any one of BiO, 5Sb1 and 5Te3, the n-type semiconductor is formed of any one of SnO ₂ : Fe, Bi ₂ Te and 7SeO ₃ , a method of manufacturing a photovoltaic device is formed of a transparent material. . 10. The method of claim 9, The first thermal conductive layer and the second thermal conductive layer is a method of manufacturing a photovoltaic device is formed of a ceramic-based transparent insulating film. 10. The method of claim 9, Forming the first electrode and the second electrode, Forming a lower electrode layer on the first thermal conductive layer using a transparent electrode material; Forming a first electrode and a second electrode by performing a selective etching process on the lower electrode layer; The method of claim 13, The third electrode is a method of manufacturing a photovoltaic device is formed of the same material as the first and second electrodes.

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