KR20130007497A - Solar cell apparatus and method of fabricating the same - Google Patents

Solar cell apparatus and method of fabricating the same Download PDF

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KR20130007497A
KR20130007497A KR1020120133051A KR20120133051A KR20130007497A KR 20130007497 A KR20130007497 A KR 20130007497A KR 1020120133051 A KR1020120133051 A KR 1020120133051A KR 20120133051 A KR20120133051 A KR 20120133051A KR 20130007497 A KR20130007497 A KR 20130007497A
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beads
electrode layer
layer
solar cell
light absorbing
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KR101251870B1 (en
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임진우
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엘지이노텍 주식회사
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract

PURPOSE: A solar cell and a manufacturing method thereof are provided to improve photoelectric transformation efficiency by forming multiple embossing protrusions on a front electrode layer. CONSTITUTION: A substrate comprises a hole. Part of beads(110) is inserted in the hole in the front side of the substrate. A rear electrode layer(200) is arranged on the surface of the beads. A light absorbing layer(300) is arranged on the beads. A front electrode layer(500) is arranged on the light absorbing layer.

Description

태양전지 및 이의 제조방법{SOLAR CELL APPARATUS AND METHOD OF FABRICATING THE SAME}SOLAR CELL AND MANUFACTURING METHOD THEREOF {SOLAR CELL APPARATUS AND METHOD OF FABRICATING THE SAME}

실시예는 태양전지 및 이의 제조방법에 관한 것이다.An embodiment relates to a solar cell and a manufacturing method thereof.

최근 에너지의 수요가 증가함에 따라서, 태양광 에너지를 전기에너지로 변환시키는 태양전지에 대한 개발이 진행되고 있다.Recently, as the demand for energy increases, development of solar cells for converting solar energy into electrical energy is in progress.

특히, 유리지지기판, 금속 후면 전극층, p형 CIGS계 광 흡수층, 버퍼층, n형 투명전극층 등을 포함하는 지지기판 구조의 pn 헤테로 접합 장치인 CIGS계 태양전지가 널리 사용되고 있다.In particular, a CIGS-based solar cell, which is a pn heterojunction device having a support substrate structure including a glass support substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a buffer layer, an n-type transparent electrode layer, and the like, is widely used.

또한, 이러한 태양전지의 효율을 증가시키기 위해서 다양한 연구가 진행 중이다.In addition, various studies are underway to increase the efficiency of such solar cells.

실시예는 향상된 광학적 특성을 가지는 태양전지 및 이의 제조방법을 제공하고자 한다.Embodiments provide a solar cell having improved optical properties and a method of manufacturing the same.

실시예에 따른 태양전지는 홀을 포함하는 기판; 상기 기판의 전면측 홀에 일부가 삽입되는 비드들; 상기 비드들의 표면에 배치되는 후면전극층; 상기 비드들의 상에 배치되는 광 흡수층; 및 상기 광 흡수층 상에 배치되는 전면전극층을 포함한다.According to an embodiment, a solar cell includes a substrate including a hole; Beads in which a portion is inserted into a front side hole of the substrate; A back electrode layer disposed on the surfaces of the beads; A light absorbing layer disposed on the beads; And a front electrode layer disposed on the light absorbing layer.

실시예에 따른 태양전지의 제조방법은 비드들의 표면에 각각 후면전극층을 형성하는 단계; 상기 후면전극층 상에 광 흡수층을 형성하는 단계; 기판에 복수의 홀을 형성하고 상기 비드들을 상기 복수의 홀에 삽입하는 단계; 상기 비드들과 기판 상에 전면전극층을 형성하는 단계를 포함한다.The method of manufacturing a solar cell according to the embodiment includes forming a back electrode layer on each of the surfaces of the beads; Forming a light absorbing layer on the back electrode layer; Forming a plurality of holes in the substrate and inserting the beads into the plurality of holes; Forming a front electrode layer on the beads and the substrate.

실시예에 따른 태양전지는 비드들을 사용하여, 기판의 홀에 일부가 삽입되도록 형성될 수 있다. 이에 따라 후면전극층, 광 흡수층 및 전면전극층이 상기 비드들을 둘러싸도록 형성하여 돌기들을 형성할 수 있다. 이에 따라서, 태양광은 전면전극층 및 광 흡수층에 효과적으로 입사된다. 또한, 실시예에 따른 태양전지는 전면전극층 및 광 흡수층에서 반사되는 광을 줄일 수 있다.The solar cell according to the embodiment may be formed such that a portion is inserted into a hole of the substrate using beads. Accordingly, the back electrode layer, the light absorbing layer, and the front electrode layer may be formed to surround the beads to form protrusions. Accordingly, sunlight is effectively incident on the front electrode layer and the light absorbing layer. In addition, the solar cell according to the embodiment can reduce the light reflected from the front electrode layer and the light absorbing layer.

즉, 상기 비드들에 의해서, 전면전극층에는 엠보싱 형상의 다수 개의 돌기들이 형성될 수 있다. 전면전극층의 돌기들은 입사되는 태양광의 반사를 줄이고, 입광 효율을 향상시킬 수 있다.That is, by the beads, a plurality of embossed protrusions may be formed on the front electrode layer. The protrusions of the front electrode layer may reduce reflection of incident sunlight and improve light receiving efficiency.

또한, 상기 비드들에 의해서, 상기 후면전극층에는 다수 개의 돌기들이 형성될 수 있다. 이에 따라서, 광 흡수층을 통과하는 광은 후면전극층에 의해서 여러 방향으로 난반사될 수 있다.In addition, by the beads, a plurality of protrusions may be formed on the back electrode layer. Accordingly, the light passing through the light absorbing layer may be diffusely reflected in various directions by the back electrode layer.

따라서, 후면전극층에 의해서 반사되는 태양광은 긴 경로를 통하여, 상기 광 흡수층을 통과하게 된다.Therefore, the sunlight reflected by the back electrode layer passes through the light absorbing layer through a long path.

특히, 비드들이 구 형상을 가지는 경우, 비드들에 의해서 형성된 돌기들은 구 또는 반구 형상을 가질 수 있다. 이에 따라서, 태양광은 입사각에 상관없이, 상기 전면전극층 및 상기 광 흡수층에 거의 수직으로 입사될 수 있다.In particular, when the beads have a spherical shape, the protrusions formed by the beads may have a spherical or hemispherical shape. Accordingly, sunlight may be incident almost perpendicularly to the front electrode layer and the light absorbing layer regardless of the incident angle.

또한 기판에 홀을 형성함으로써, 플렉서블 기판의 경우 밴딩 스트레스(bending stress)를 감소시켜, 밴딩 각도의 증가 및 데미지를 감소시킬 수 있다.In addition, by forming a hole in the substrate, it is possible to reduce the bending stress (bending stress) in the case of the flexible substrate, it is possible to increase the bending angle and reduce the damage.

따라서, 실시예에 따른 태양전지는 향상된 광학적 특성을 가질 수 있고, 높은 광-전 변환 효율을 구현할 수 있다.Therefore, the solar cell according to the embodiment may have improved optical characteristics and may implement high photoelectric conversion efficiency.

도 1은 실시예에 따른 태양전지의 일부를 도시한 사시도이다.
도 2는 실시예에 따른 태양전지의 일 단면을 도시한 단면도이다.
도 3 내지 도 7은 실시예에 따른 태양전지를 제조하는 과정을 도시한 도면들이다.1 is a perspective view illustrating a part of a solar cell according to an embodiment.
2 is a cross-sectional view showing a cross section of the solar cell according to the embodiment.
3 to 7 are views illustrating a process of manufacturing a solar cell according to the embodiment.

실시예의 설명에 있어서, 각 지지기판, 층, 막 또는 전극 등이 각 지지기판, 층, 막, 또는 전극 등의 "상(on)"에 또는 "아래(under)"에 형성되는 것으로 기재되는 경우에 있어, "상(on)"과 "아래(under)"는 "직접(directly)" 또는 "다른 구성요소를 개재하여(indirectly)" 형성되는 것을 모두 포함한다. 또한 각 구성요소의 상 또는 아래에 대한 기준은 도면을 기준으로 설명한다. 도면에서의 각 구성요소들의 크기는 설명을 위하여 과장될 수 있으며, 실제로 적용되는 크기를 의미하는 것은 아니다.In the description of the embodiments, when each support substrate, layer, film, or electrode is described as being formed "on" or "under" of each support substrate, layer, film, or electrode, etc. As used herein, “on” and “under” include both “directly” or “indirectly” other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

도 1은 실시예에 따른 태양전지의 일부를 도시한 사시도이다. 도 2는 실시예에 따른 태양전지의 일 단면을 도시한 단면도이다. 도 1에서는 태양전지의 단면도 일부 도시하였다.1 is a perspective view illustrating a part of a solar cell according to an embodiment. 2 is a cross-sectional view showing a cross section of the solar cell according to the embodiment. 1 illustrates a partial cross-sectional view of a solar cell.

도 1 및 도 2를 참조하면, 실시예에 따른 태양전지는 지지기판(100), 다수 개의 비드들(110), 후면전극층(200), 광 흡수층(300), 버퍼층(400), 전면전극층(500), 절연층(160) 및 전극층(600)을 포함한다.1 and 2, a solar cell according to an embodiment includes a support substrate 100, a plurality of beads 110, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, and a front electrode layer ( 500, an insulating layer 160, and an electrode layer 600.

상기 지지기판(100)은 다수 개의 비드들(110)이 삽입되는 홀(120)을 포함하고 플레이트 형상을 가지며, 상기 후면전극층(200), 상기 광 흡수층(300), 버퍼층(400) 및 상기 전면전극층(500)을 지지한다.The support substrate 100 includes a hole 120 into which a plurality of beads 110 are inserted, has a plate shape, and includes the back electrode layer 200, the light absorbing layer 300, a buffer layer 400, and the front surface. The electrode layer 500 is supported.

상기 지지기판(100)은 절연체일 수 있다. 상기 지지기판(100)은 유리기판, 플라스틱기판, 폴리아미드기판 또는 금속기판일 수 있다. 상기 지지기판(100)은 투명할 수 있다. 상기 지지기판(100)은 리지드하거나 플렉서블할 수 있다.The support substrate 100 may be an insulator. The support substrate 100 may be a glass substrate, a plastic substrate, a polyamide substrate or a metal substrate. The supporting substrate 100 may be transparent. The support substrate 100 may be rigid or flexible.

상기 비드들(110)은 상기 지지기판(100)내에 형성된 홀(120)을 메우도록 배치된다. 상기 비드들(110)은 상기 지지기판(100)의 상면에 직접 배치될 수 있다. 상기 비드들(110)은 투명 또는 불투명할 수 있다.The beads 110 are disposed to fill the hole 120 formed in the support substrate 100. The beads 110 may be directly disposed on an upper surface of the support substrate 100. The beads 110 may be transparent or opaque.

상기 비드들(110)의 직경이 0.01mm보다 작으면 제 1 돌기들(410) 및 제 2 돌기들(510)이 엠보싱 형상을 갖기 어렵고, 이에 따라 상기 전면전극층(500)에 입사되는 태양광의 반사방지에 효과적이지 않으며, 5mm 이상으로 형성되면 태양전지의 소형화 구현이 어려워지므로 이러한 점을 고려하여 0.01mm 내지 5mm의 범위로 형성하는 것이 바람직하다. When the diameters of the beads 110 are smaller than 0.01 mm, the first protrusions 410 and the second protrusions 510 may have an embossed shape, and thus the reflection of sunlight incident on the front electrode layer 500 may be difficult. It is not effective for prevention, and if it is formed in more than 5mm it becomes difficult to implement the miniaturization of the solar cell is preferably formed in the range of 0.01mm to 5mm in consideration of this point.

상기 비드들(110)은 다양한 형상을 가질 수 있다. 예를 들어, 상기 비드들(110)은 다면체 형상을 가질 수 있다. 이와는 다르게, 상기 비드들(110)은 곡면을 가지는 입자들일 수 있다. 예를 들어, 상기 비드들(110)은 구 형상을 가질 수 있다.The beads 110 may have various shapes. For example, the beads 110 may have a polyhedron shape. Alternatively, the beads 110 may be particles having a curved surface. For example, the beads 110 may have a spherical shape.

상기 비드들(110)은 절연체 또는 도전체일 수 있다. 상기 비드들(110)이 절연체인 경우, 상기 비드들(110)로 사용되는 물질의 예로서는 유리 등을 들 수 있다. 상기 비드들(110)이 도전체인 경우, 상기 비드들(110)은 상기 후면전극층(200)의 전기적인 특성을 향상시킬 수 있다. The beads 110 may be insulators or conductors. When the beads 110 are insulators, examples of the material used as the beads 110 may include glass. When the beads 110 are conductors, the beads 110 may improve electrical characteristics of the back electrode layer 200.

상기 비드들(110)은 상기 광 흡수층(300)의 특성을 향상시키는 물질을 포함할 수 있다. 예를 들어, 상기 비드들(110)은 나트륨을 포함할 수 있다. 예를 들어, 상기 비드들(110)은 소다 라임 글래스(soda lime glass)를 포함할 수 있다. 또는 Al2O3, SiO2, ZrO2 등의 세라믹 물질을 포함할 수 있다.The beads 110 may include a material to improve characteristics of the light absorbing layer 300. For example, the beads 110 may include sodium. For example, the beads 110 may include soda lime glass. Or ceramic materials such as Al 2 O 3 , SiO 2 , ZrO 2, and the like.

또한, 상기 비드들(110)에 나트륨이 포함되는 경우, 상기 지지기판(100)은 나트륨 함량이 적은 물질로 형성될 수 있다. 즉, 상기 비드들(110)에 나트륨이 포함되는 경우, 상기 지지기판(100)으로 사용되는 물질은 나트륨 함량에 구애받지 않고 선택될 수 있다.In addition, when sodium is included in the beads 110, the support substrate 100 may be formed of a material having a low sodium content. That is, when sodium is included in the beads 110, the material used as the support substrate 100 may be selected regardless of the sodium content.

이에 따라서, 상기 비드들(110)에 나트륨이 포함되는 경우에는, 상기 지지기판(100)으로 향상된 기계적인 특성 및 내열성을 가지는 강화 유리 등이 사용될 수 있다.Accordingly, when sodium is included in the beads 110, tempered glass having improved mechanical properties and heat resistance may be used as the support substrate 100.

따라서, 실시예에 따른 태양전지는 향상된 기계적인 특성을 가질 수 있으며, 높은 온도에서 제조될 수 있다.Therefore, the solar cell according to the embodiment may have improved mechanical properties and may be manufactured at high temperatures.

상기 후면전극층(200)은 상기 비드들(110)을 둘러싼다. 더 자세하게, 상기 후면전극층(200)은 상기 비드들(110)의 표면에서 상기 비드들(110)을 덮도록 형성될 수 있다. The back electrode layer 200 surrounds the beads 110. In more detail, the back electrode layer 200 may be formed to cover the beads 110 on the surfaces of the beads 110.

상기 후면전극층(200)은 도전층이다. 상기 후면전극층(200)은 태양전지 중 상기 광 흡수층(300)에서 생성된 전하가 이동하도록 하여 태양전지의 외부로 전류를 흐르게 할 수 있다. 상기 후면전극층(200)은 이러한 기능을 수행하기 위하여 전기 전도도가 높고 비저항이 작아야 한다.The back electrode layer 200 is a conductive layer. The back electrode layer 200 may allow electric charges generated in the light absorbing layer 300 of the solar cell to move to allow current to flow to the outside of the solar cell. The back electrode layer 200 should have high electrical conductivity and low specific resistance in order to perform this function.

또한, 상기 후면전극층(200)은 CIGS 화합물 형성시 수반되는 황(S) 또는 셀레늄(Se) 분위기 하에서의 열처리 시 고온 안정성이 유지되어야 한다.In addition, the back electrode layer 200 should maintain high temperature stability during heat treatment under sulfur (S) or selenium (Se) atmosphere accompanying CIGS compound formation.

이러한 후면전극층(200)은 몰리브덴(Mo), 니켈(Ni), 금(Au), 알루미늄(Al), 크롬(Cr), 텅스텐(W) 및 구리(Cu)중 어느 하나로 형성될 수 있다. 이 가운데, 특히 몰리브덴(Mo)은 상술한 후면전극층(200)에 요구되는 특성을 전반적으로 충족시킬 수 있다.The back electrode layer 200 may be formed of any one of molybdenum (Mo), nickel (Ni), gold (Au), aluminum (Al), chromium (Cr), tungsten (W), and copper (Cu). Among them, in particular, molybdenum (Mo) may satisfy the characteristics required for the above-mentioned back electrode layer 200 as a whole.

상기 후면전극층(200)은 두 개 이상의 층들을 포함할 수 있다. 이때, 각각의 층들은 같은 금속으로 형성되거나, 서로 다른 금속으로 형성될 수 있다.The back electrode layer 200 may include two or more layers. In this case, each of the layers may be formed of the same metal, or may be formed of different metals.

상기 후면전극층(200)의 두께는 약 300㎚ 내지 약 700㎚일 수 있다. 상기 후면전극층(200)은 상기 비드들(110)에 직접 접촉된다. 또한, 상기 비드들(110)이 도전체인 경우, 상기 후면전극층(200)은 상기 비드들(110)에 직접 접속될 수 있다.The back electrode layer 200 may have a thickness of about 300 nm to about 700 nm. The back electrode layer 200 is in direct contact with the beads 110. In addition, when the beads 110 are conductors, the back electrode layer 200 may be directly connected to the beads 110.

또한, 상기 후면전극층(200)은 두 개 이상의 층들을 포함할 수 있다. 이때, 각각의 층들은 같은 금속으로 형성되거나, 서로 다른 금속으로 형성될 수 있다.In addition, the back electrode layer 200 may include two or more layers. In this case, each of the layers may be formed of the same metal, or may be formed of different metals.

상기 광 흡수층(300)은 상기 후면전극층(200) 상에 배치된다. 상기 광 흡수층(300)은 Ⅰ-Ⅲ-Ⅵ족계 화합물을 포함한다. 예를 들어, 상기 광 흡수층(300)은 구리-인듐-갈륨-셀레나이드계(Cu(In,Ga)Se2;CIGS계) 결정 구조, 구리-인듐-셀레나이드계 또는 구리-갈륨-셀레나이드계 결정 구조를 가질 수 있다.The light absorbing layer 300 is disposed on the back electrode layer 200. The light absorption layer 300 includes an I-III-VI group compound. For example, the light absorbing layer 300 is copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2; CIGS-based) crystal structure, a copper-indium-selenide-based or copper-gallium-selenide Crystal structure.

상기 광 흡수층(300)의 에너지 밴드갭(band gap)은 약 1eV 내지 1.8eV일 수 있다.The energy band gap of the light absorption layer 300 may be about 1 eV to 1.8 eV.

상기 광 흡수층(300)은 상기 비드들(110)을 덮는다. 즉, 상기 후면전극층(200)을 감싸도록 형성될 수 있다.The light absorbing layer 300 covers the beads 110. That is, it may be formed to surround the back electrode layer 200.

상기 버퍼층(400)은 상기 광 흡수층(300) 상에 배치된다. 상기 버퍼층(400)은 상기 광 흡수층(300)에 직접 접촉한다. The buffer layer 400 is disposed on the light absorbing layer 300. The buffer layer 400 is in direct contact with the light absorbing layer 300.

더 자세하게, 상기 버퍼층(400)은 상기 비드들(110)을 둘러싸는 광 흡수층(300)의 표면에서 상기 지지기판(100)의 홀(120)에 삽입된 제외한 나머지 부분에 직접 배치된다.In more detail, the buffer layer 400 is disposed directly on the remaining portion of the support substrate 100 except for being inserted into the hole 120 on the surface of the light absorbing layer 300 surrounding the beads 110.

상기 제 1 돌기들(410)은 상기 비드들(110)의 형상에 대응하여 형성될 수 있다. 상기 제 1 돌기들(410)은 엠보싱 형상을 가질 수 있다.The first protrusions 410 may be formed to correspond to the shapes of the beads 110. The first protrusions 410 may have an embossed shape.

CIGS 화합물을 광흡수층(300)으로 갖는 태양전지는 p형 반도체인 CIGS 화합물 박막과 n형 반도체인 전면전극층(500)이 pn 접합을 형성한다. 하지만 두 물질은 격자상수와 밴드갭 에너지의 차이가 크기 때문에 양호한 접합을 형성하기 위해서는 밴드갭이 두 물질의 중간에 위치하는 버퍼층이 필요하다.In the solar cell having the CIGS compound as the light absorption layer 300, the CIGS compound thin film, which is a p-type semiconductor, and the front electrode layer 500, which is an n-type semiconductor, form a pn junction. However, since the two materials have a large difference in lattice constant and band gap energy, a buffer layer having a band gap in between the two materials is required to form a good junction.

상기 버퍼층(400)을 형성하는 물질로는 CdS, ZnS등이 있으나 태양전지의 발전 효율 측면에서 CdS가 상대적으로 우수하다. CdS박막은 n형 반도체이며, 인듐(In), 갈륨(Ga), 알루미늄(Al) 등을 도핑함으로써 낮은 저항값을 얻을 수 있다.Materials for forming the buffer layer 400 include CdS, ZnS, etc., but CdS is relatively excellent in terms of power generation efficiency of the solar cell. The CdS thin film is an n-type semiconductor, and a low resistance value can be obtained by doping indium (In), gallium (Ga), aluminum (Al), and the like.

상기 버퍼층(400) 상에는 전면전극층(500)이 형성될 수 있다. 상기 전면전극층(500)은 투명하며, 도전층으로 작용할 수 있다. 상기 전면전극층(500)은 산화물을 포함한다. 예를 들어, 상기 전면전극층(500)은 징크 옥사이드(zinc oxide), 인듐 틴 옥사이드(induim tin oxide;ITO) 또는 인듐 징크 옥사이드(induim zinc oxide;IZO) 등을 포함할 수 있다.The front electrode layer 500 may be formed on the buffer layer 400. The front electrode layer 500 is transparent and may serve as a conductive layer. The front electrode layer 500 includes an oxide. For example, the front electrode layer 500 may include zinc oxide, indium tin oxide (ITO), or indium zinc oxide (IZO).

또한, 상기 산화물은 알루미늄(Al), 알루미나(Al2O3), 마그네슘(Mg) 또는 갈륨(Ga) 등의 도전성 불순물을 포함할 수 있다. 더 자세하게, 상기 전면전극층(500)은 알루미늄 도핑된 징크 옥사이드(Al doped zinc oxide;AZO) 또는 갈륨 도핑된 징크 옥사이드(Ga doped zinc oxide;GZO) 등을 포함할 수 있다.In addition, the oxide may include conductive impurities such as aluminum (Al), alumina (Al 2 O 3 ), magnesium (Mg), or gallium (Ga). In more detail, the front electrode layer 500 may include aluminum doped zinc oxide (AZO) or gallium doped zinc oxide (GZO).

실시예에 따른 태양전지는 상기 비드들(110)을 사용하여, 버퍼층(400) 및 상기 전면전극층(500)에 각각 상기 제 1 돌기들(410) 및 상기 제 2 돌기들(510)을 형성한다.The solar cell according to the embodiment forms the first protrusions 410 and the second protrusions 510 on the buffer layer 400 and the front electrode layer 500 using the beads 110, respectively. .

이에 따라서, 입사되는 태양광은 상기 전면전극층(500) 및 상기 광 흡수층(300)에 효과적으로 입사된다. 또한, 실시예에 따른 태양전지는 상기 전면전극층(500) 및 상기 광 흡수층(300)에서 반사되는 광을 줄일 수 있다.Accordingly, incident sunlight is effectively incident on the front electrode layer 500 and the light absorbing layer 300. In addition, the solar cell according to the embodiment may reduce the light reflected from the front electrode layer 500 and the light absorbing layer 300.

즉, 상기 비드들(110)에 의해서, 상기 제 1 돌기들(410) 및 제 2 돌기들(510)은 엠보싱 형상을 가지고, 반사 방지 기능을 수행할 수 있다. 이에 따라서, 상기 전면전극층(500)에 입사되는 태양광의 반사가 감소되고, 입광 효율이 향상될 수 있다.That is, by the beads 110, the first protrusions 410 and the second protrusions 510 may have an embossed shape and may perform an anti-reflection function. As a result, reflection of sunlight incident on the front electrode layer 500 may be reduced, and light receiving efficiency may be improved.

또한, 상기 광 흡수층(300)을 통과하는 광은 상기 제 1 돌기들(410)에 의해서, 여러 방향으로 난반사될 수 있다. 따라서, 상기 후면전극층(200)에 의해서 반사되는 태양광은 긴 경로를 통하여, 상기 광 흡수층(300)을 통과하게 된다.In addition, light passing through the light absorbing layer 300 may be diffusely reflected in various directions by the first protrusions 410. Therefore, the sunlight reflected by the back electrode layer 200 passes through the light absorbing layer 300 through a long path.

특히, 상기 비드들(110)이 구 형상을 가지는 경우, 상기 제 1 돌기들(410) 및 제 2 돌기들(510)은 반구 형상을 가질 수 있다. 이에 따라서, 대부분의 태양광은 상기 전면전극층(500) 및 상기 광 흡수층(300)에 거의 수직으로 입사될 수 있다.In particular, when the beads 110 have a spherical shape, the first protrusions 410 and the second protrusions 510 may have a hemispherical shape. Accordingly, most of the sunlight may be incident almost perpendicularly to the front electrode layer 500 and the light absorbing layer 300.

즉, 상기 지지기판(100)에 대하여 경사지는 방향으로 태양광이 입사되더라도, 상기 전면전극층(500) 및 상기 광 흡수층(300)에는 거의 수직에 가깝게 상기 태양광이 입사될 수 있다.That is, even when sunlight is incident in a direction inclined with respect to the support substrate 100, the sunlight may be incident to the front electrode layer 500 and the light absorbing layer 300 almost vertically.

따라서, 실시예에 따른 태양전지는 향상된 광학적 특성을 가질 수 있고, 높은 광-전 변환 효율을 구현할 수 있다.Therefore, the solar cell according to the embodiment may have improved optical characteristics and may implement high photoelectric conversion efficiency.

그리고 지지기판(100)에 삽입되기 전에 비드들(110)의 표면에 광 흡수층(300)을 형성하므로, 사전에 고온공정을 진행하여 기판에 삽입하므로 고품질의 플렉서블한 기판의 제작이 가능하다.Since the light absorbing layer 300 is formed on the surfaces of the beads 110 before being inserted into the support substrate 100, high-quality flexible substrates can be manufactured by inserting the light absorbing layer 300 into the substrate in advance.

또한, 상기 지지기판(100)에 홀(120)을 형성함으로써, 플렉서블한 기판의 밴딩 스트레스를 감소시킬 수 있다. 이에 따라 밴딩 각도가 증가하고, 기판의 휘어짐에 따른 데미지를 최소화할 수 있다.
In addition, by forming the hole 120 in the support substrate 100, it is possible to reduce the bending stress of the flexible substrate. Accordingly, the bending angle increases, and damage due to the bending of the substrate may be minimized.

도 3 내지 도 7은 실시예에 따른 태양전지의 제조방법을 도시한 단면도이다.3 to 7 are cross-sectional views illustrating a method of manufacturing a solar cell according to an embodiment.

본 제조방법에 관한 설명은 앞서 설명한 태양전지에 대한 설명을 참고한다. 앞서 설명한 태양전지에 대한 설명은 본 제조방법에 관한 설명에 본질적으로 결합될 수 있다.For a description of the present manufacturing method, refer to the description of the solar cell described above. The description of the solar cell described above may be essentially combined with the description of the present manufacturing method.

도 3에 도시된 바와 같이, 비드(110) 표면에 후면전극층(200) 및 광 흡수층(300)을 형성할 수 있다. 상기 후면전극층(200) 및 광 흡수층(300)은 상기 비드(110)의 표면을 둘러싸도록 형성될 수 있다.As shown in FIG. 3, the back electrode layer 200 and the light absorbing layer 300 may be formed on the surface of the bead 110. The back electrode layer 200 and the light absorbing layer 300 may be formed to surround the surface of the bead 110.

상기 후면전극층(200) 및 광 흡수층(300)은 스퍼터링(Sputtering)법 또는 진공증착(Vacuum Evaporation)법으로 형성될 수 있다. The back electrode layer 200 and the light absorbing layer 300 may be formed by a sputtering method or a vacuum evaporation method.

예를 들어, 상기 광 흡수층(300)을 형성하기 위해서 구리, 인듐, 갈륨, 셀레늄을 동시 또는 구분하여 증발시키면서 구리-인듐-갈륨-셀레나이드계(Cu(In,Ga)Se2;CIGS계)의 광 흡수층을 형성하는 방법과 금속 프리커서 막을 형성시킨 후 셀레니제이션(Selenization) 공정에 의해 형성시키는 방법이 폭넓게 사용되고 있다.For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300. A method of forming a light absorbing layer of a metal and a method of forming a metal precursor film by a selenization process are widely used.

금속 프리커서 막을 형성시킨 후 셀레니제이션 하는 것을 세분화하면, 구리 타겟, 인듐 타겟, 갈륨 타겟을 사용하는 스퍼터링 공정에 의해서, 상기 이면전극(200) 상에 금속 프리커서 막이 형성된다.After the metal precursor film is formed and then subjected to selenization, a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.

이후, 상기 금속 프리커서 막은 셀레이제이션(selenization) 공정에 의해서, 구리-인듐-갈륨-셀레나이드계(Cu(In,Ga)Se2;CIGS계)의 광 흡수층이 형성된다.Thereafter, the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) layer by a selenization process.

이와는 다르게, 상기 구리 타겟, 인듐 타겟, 갈륨 타겟을 사용하는 스퍼터링 공정 및 상기 셀레니제이션 공정은 동시에 진행될 수 있다.Alternatively, the copper target, the indium target, the sputtering process using the gallium target, and the selenization process may be performed simultaneously.

이와는 다르게, 구리 타겟 및 인듐 타겟 만을 사용하거나, 구리 타겟 및 갈륨 타겟을 사용하는 스퍼터링 공정 및 셀레니제이션 공정에 의해서, CIS계 또는 CIG계 광 흡수층(300)이 형성될 수 있다.Alternatively, the CIS-based or CIG-based optical absorption layer 300 can be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

상기 광 흡수층(300)을 형성하기 위한 공정은 약 500℃ 이상의 고온에서 진행될 수 있다.The process for forming the light absorbing layer 300 may be performed at a high temperature of about 500 ℃ or more.

도 4 및 도 5를 참고하면 지지기판(100)의 일부 영역에 홀(120)을 형성한다. 상기 홀(120)은 펀칭(punching) 작업을 통해서 형성될 수 있다. 4 and 5, a hole 120 is formed in a portion of the support substrate 100. The hole 120 may be formed through a punching operation.

다음으로, 상기 광 흡수층(300)이 표면에 형성된 비드들(110)을 상기 지지기판(100)의 홀(120)에 삽입할 수 있다. Next, the beads 110 having the light absorbing layer 300 formed on a surface thereof may be inserted into the holes 120 of the support substrate 100.

상기 비드들(110)은 상기 홀(120)보다 큰 직경을 갖도록 형성될 수 있다. 즉, 상기 지지기판(100)의 상면으로부터 돌출된 상기 비드들(110)의 높이(h)는 상기 비드들(110) 직경의 50% 내지 80%의 비율로 형성될 수 있다. The beads 110 may be formed to have a diameter larger than that of the hole 120. That is, the height h of the beads 110 protruding from the upper surface of the support substrate 100 may be formed at a rate of 50% to 80% of the diameter of the beads 110.

도 6을 참고하면, 상기 지지기판(100)과 비드들(110) 표면에 버퍼층(400) 및 전면전극층(500)을 형성할 수 있다.Referring to FIG. 6, a buffer layer 400 and a front electrode layer 500 may be formed on surfaces of the support substrate 100 and the beads 110.

상기 버퍼층(400)은 황화 카드뮴이 스퍼터링 공정 또는 용액성장법(chemical bath depositon;CBD) 등에 의해서 증착되어 형성될 수 있다.예를 들어, 상기 광 흡수층(300)이 형성된 후, 상기 광 흡수층(300)은 황화 카드뮴을 형성하기 위한 물질들을 포함하는 용액에 침지되고, 상기 광 흡수층(300) 상에 황화 카드뮴을 포함하는 상기 버퍼층(400)이 형성된다.The buffer layer 400 may be formed by depositing cadmium sulfide by a sputtering process or a chemical bath depositon (CBD). For example, after the light absorbing layer 300 is formed, the light absorbing layer 300 is formed. ) Is immersed in a solution containing materials for forming cadmium sulfide, and the buffer layer 400 including cadmium sulfide is formed on the light absorbing layer 300.

다음으로, 상기 버퍼층(400) 상에 전면전극층(500)이 형성될 수 있다. 상기 전면전극층(500)은 CVD 공정 또는 스퍼터링 공정에 의해서 증착되어 형성될 수 있다. 상기 전면전극층(500)은 알루미늄 도핑된 징크 옥사이드, 인듐 징크 옥사이드 또는 인듐 틴 옥사이드 등을 포함할 수 있다.Next, the front electrode layer 500 may be formed on the buffer layer 400. The front electrode layer 500 may be deposited by a CVD process or a sputtering process. The front electrode layer 500 may include aluminum doped zinc oxide, indium zinc oxide, or indium tin oxide.

상기 비드들(110)에 의해서, 별도의 패터닝 공정 없이, 상기 버퍼층(400) 및 상기 전면전극층(500)에 각각 제 1 돌기들(410) 및 제 2 돌기들(510)이 형성될 수 있다.By the beads 110, first protrusions 410 and second protrusions 510 may be formed in the buffer layer 400 and the front electrode layer 500, respectively, without a separate patterning process.

도 7을 참고하면, 상기 지지기판(100) 아래에 절연층(160)을 형성할 수 있다. 다음으로, 비드들(110)과 절연층(160)의 아래에 전극층(600)을 형성할 수 있다. Referring to FIG. 7, an insulating layer 160 may be formed under the support substrate 100. Next, the electrode layer 600 may be formed under the beads 110 and the insulating layer 160.

따라서, 실시예에 따른 태양전지는 향상된 광학적 특성을 가질 수 있고, 높은 광-전 변환 효율을 구현할 수 있다.Therefore, the solar cell according to the embodiment may have improved optical characteristics and may implement high photoelectric conversion efficiency.

또한, 이상에서 실시예들에 설명된 특징, 구조, 효과 등은 본 발명의 적어도 하나의 실시예에 포함되며, 반드시 하나의 실시예에만 한정되는 것은 아니다. 나아가, 각 실시예에서 예시된 특징, 구조, 효과 등은 실시예들이 속하는 분야의 통상의 지식을 가지는 자에 의해 다른 실시예들에 대해서도 조합 또는 변형되어 실시 가능하다. 따라서 이러한 조합과 변형에 관계된 내용들은 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

이상에서 실시예를 중심으로 설명하였으나 이는 단지 예시일 뿐 본 발명을 한정하는 것이 아니며, 본 발명이 속하는 분야의 통상의 지식을 가진 자라면 본 실시예의 본질적인 특성을 벗어나지 않는 범위에서 이상에 예시되지 않은 여러 가지의 변형과 응용이 가능함을 알 수 있을 것이다. 예를 들어, 실시예에 구체적으로 나타난 각 구성 요소는 변형하여 실시할 수 있는 것이다. 그리고 이러한 변형과 응용에 관계된 차이점들은 첨부된 청구 범위에서 규정하는 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (3)

비드들의 표면에 각각 후면전극층을 형성하는 단계;
상기 후면전극층 상에 광 흡수층을 형성하는 단계;
기판에 복수의 홀을 형성하고 상기 비드들을 상기 복수의 홀에 삽입하는 단계;
상기 비드들과 기판 상에 전면전극층을 형성하는 단계를 포함하는 태양전지의 제조방법.Forming a back electrode layer on the surfaces of the beads;
Forming a light absorbing layer on the back electrode layer;
Forming a plurality of holes in the substrate and inserting the beads into the plurality of holes;
Forming a front electrode layer on the beads and the substrate manufacturing method of a solar cell. 제1항에 있어서,
상기 복수의 홀의 직경은 상기 비드들의 직경보다 작은 값을 갖도록 형성하는 태양전지의 제조방법.The method of claim 1,
The diameter of the plurality of holes is formed to have a value smaller than the diameter of the bead of the solar cell manufacturing method. 제1항에 있어서,
상기 기판 아래에 절연층 및 전극층을 형성하는 단계를 더 포함하는 태양전지의 제조방법.
The method of claim 1,
The method of manufacturing a solar cell further comprises forming an insulating layer and an electrode layer under the substrate.
KR1020120133051A 2012-11-22 2012-11-22 Solar cell apparatus and method of fabricating the same KR101251870B1 (en)

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KR101976673B1 (en) * 2017-12-19 2019-05-10 한국에너지기술연구원 Silicon solar cell
WO2023039257A1 (en) * 2021-09-10 2023-03-16 Leap Photovoltaics Inc. Methods and systems for photovoltaic devices using silicon particles

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JP2007258229A (en) 2006-03-20 2007-10-04 Japan Gore Tex Inc Semiconductor particulate structure, and semiconductor device using same
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KR101976673B1 (en) * 2017-12-19 2019-05-10 한국에너지기술연구원 Silicon solar cell
WO2023039257A1 (en) * 2021-09-10 2023-03-16 Leap Photovoltaics Inc. Methods and systems for photovoltaic devices using silicon particles

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