KR20110035145A - In-plane switching mode liquid crystal display device - Google Patents

Abstract

PURPOSE: An in-plane switching mode LCD(Liquid Crystal Display) device is provided to eliminate static electricity efficiently by forming additional elements on a color filter substrate. CONSTITUTION: An in-plane switching mode LCD(Liquid Crystal Display) device comprises: a gate wire and a data wire which cross each other in a display region of a first substrate(210) to define a pixel region(p), wherein the first substrate includes the display region where plural pixels regions are defined and a non-display region adjacent to the display region; a TFT(Thin Film Transistor)(Tr) which is connected to the gate and data wires and placed in each pixel region; a first connection pattern which is placed in the non-display region of the first substrate; a protection layer which covers the TFT and the first connection pattern has first and second contact holes; a pixel electrode which is placed on the protection layer and connected to the TFT; a common electrode which is placed on the protection layer and is alternatively arranged with the pixel electrode; a second connection pattern which is placed on the protection layer and is connected to one side of the first connection pattern through the first contact hole; an FPCB(Flexible Printed Circuit Board) which is placed on the protection layer and is connected to the other side of the first connection pattern through the second contact hole; a transparent conductive layer which is placed on a second plane of a second substrate(260); a conductive dot which contacts transparent conductive layer and the second connection pattern; and a liquid crystal layer(270) which is placed between the first and second substrates.

Description

Transverse electric field type liquid crystal display device {In-plane switching mode liquid crystal display device}

The present invention relates to a transverse electric field type liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device capable of effectively preventing damage caused by static electricity.

Generally, the driving principle of a liquid crystal display device utilizes the optical anisotropy and polarization properties of a liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy to express image information.

Currently, an active matrix liquid crystal display device (AM-LCD: abbreviated as an active matrix LCD, abbreviated as a liquid crystal display device) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has the best resolution and video performance. It is attracting attention.

The liquid crystal display includes a color filter substrate on which a common electrode is formed, an array substrate on which pixel electrodes are formed, and a liquid crystal interposed between the two substrates. In such a liquid crystal display, the common electrode and the pixel electrode are caused by an electric field applied up and down. It is excellent in the characteristics, such as transmittance | permeability and aperture ratio, by the method of driving a liquid crystal.

However, the liquid crystal drive due to the electric field applied up and down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, a transverse field type liquid crystal display device having excellent viewing angle characteristics has been proposed to overcome the above disadvantages.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

As shown, the upper substrate 9, which is a color filter substrate, and the lower substrate 10, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 11 is interposed between the upper and lower substrates 9, 10. It is.

The common electrode 17 and the pixel electrode 30 are formed on the lower substrate 10 on the same plane. In this case, the liquid crystal layer 11 is formed by the common electrode 17 and the pixel electrode 30. It is operated by the horizontal electric field (L).

2A and 2B are cross-sectional views illustrating operations of ON and OFF states of a general transverse electric field type liquid crystal display device, respectively.

First, referring to FIG. 2A, which illustrates an arrangement of liquid crystals in an on state where a voltage is applied, a phase change of a liquid crystal 11a at a position corresponding to the common electrode 17 and the pixel electrode 30 is performed. Although the liquid crystal 11b positioned in the section between the common electrode 17 and the pixel electrode 30 is formed by the horizontal electric field L formed by applying a voltage between the common electrode 17 and the pixel electrode 30, It is arranged in the same direction as the horizontal electric field (L). That is, in the transverse electric field type liquid crystal display device, since the liquid crystal moves by the horizontal electric field, the viewing angle is widened.

Next, referring to FIG. 2B, since no voltage is applied to the liquid crystal display, a horizontal electric field is not formed between the common electrode and the pixel electrode, so that the arrangement state of the liquid crystal layer 11 does not change.

As described above, the transverse electric field type liquid crystal display device has an advantage of a wide viewing angle. However, there is a problem that occurs because both the common electrode and the pixel electrode are formed on the lower substrate. That is, when static electricity is generated on the color filter substrate which is the upper substrate while the transverse electric field type liquid crystal display device is being driven, there is no configuration capable of emitting it to the outside.

That is, since the lower substrate includes components made of metal materials such as pixel electrodes and common electrodes, static electricity may be emitted to the outside through the lower substrate. Since only components made of non-metallic materials exist, damage by static electricity occurs.

The present invention is to prevent the damage caused by static electricity in the color filter substrate that is the upper substrate of the transverse electric field type liquid crystal display device as described above.

That is, to form a separate component on the color filter substrate, through this to effectively remove the static electricity.

In order to solve the above problems, the present invention defines a pixel area by crossing each other in the display area of the first substrate including a display area in which a plurality of pixel areas are defined and a non-display area around the display area. Gate wiring and data wiring; A thin film transistor connected to the gate line and the data line and positioned in each pixel area; A first connection pattern on the first substrate of the non-display area; A protective layer covering the thin film transistor and the first connection pattern and having first and second contact holes respectively exposing one side and the other side of the first connection pattern; A pixel electrode on the passivation layer of the pixel region and connected to the thin film transistor; A common electrode on the passivation layer of the pixel region, the common electrode alternately arranged with the pixel electrode; A second connection pattern on the protective layer and connected to one side of the first connection pattern through the first contact hole; An FPCB disposed on the protective layer and connected to the other side of the first connection pattern through the second contact hole and grounded to ground; A transparent conductor layer positioned on the second side of the second substrate having a first side facing the first substrate and a second side opposite the first side; Conductive dots on one side of which are in contact with the transparent conductor layer and the other side of which is in contact with the second connection pattern; Provided is a transverse electric field type liquid crystal display device including a liquid crystal layer interposed between the first and second substrates.

In another aspect, the present invention provides a display area in which a plurality of pixel areas are defined, and gate wiring and data defining the pixel areas by crossing each other in the display area of a first substrate including a non-display area around the display area. Wiring; A thin film transistor connected to the gate line and the data line and positioned in each pixel area; A first connection pattern on the first substrate of the non-display area; A protective layer covering the thin film transistor and the first connection pattern and having first and second contact holes respectively exposing one side and the other side of the first connection pattern; A pixel electrode on the passivation layer of the pixel region and connected to the thin film transistor; A common electrode on the passivation layer of the pixel region, the common electrode alternately arranged with the pixel electrode; A second connection pattern positioned on the protective layer and having one side connected to one side of the first connection pattern through the first contact hole and the other side connected to the other side of the first connection pattern through the second contact hole; ; An FPCB positioned on the protective layer and connected to the other side of the second connection pattern and grounded to ground; A transparent conductor layer positioned on the second side of the second substrate having a first side facing the first substrate and a second side opposite the first side; Conductive dots having one side in contact with the transparent conductor layer and the other side in contact with the second connection pattern; Provided is a transverse electric field type liquid crystal display device including a liquid crystal layer interposed between the first and second substrates.

The first connection pattern may be formed of a material having a smaller resistance than the second connection pattern.

The first connection pattern may be made of the same material as the gate line or the data line, and the second connection pattern may be made of the same material as the common electrode.

The first connection pattern is made of any one of aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), copper (Cu), copper alloy, the second connection pattern is made of ITO or IZO.

The conductive dot is made of silver.

A black matrix on the second surface of the second substrate and corresponding to the thin film transistor; And a color filter positioned on a second surface of the second substrate and corresponding to each pixel area.

The present invention forms a transparent conductive layer outside the color filter substrate of the transverse electric field type liquid crystal display device and is connected to the connection pattern of the lower substrate, thereby eliminating static electricity generated in the color filter substrate, thereby preventing damage caused by static electricity.

In addition, by connecting the second connection pattern of the lower substrate with the first connection pattern made of a low-resistance metal material, it is possible to prevent the damage of the second connection pattern by static electricity to effectively remove the static electricity.

In addition, the static electricity is removed by using a two-way path of the second connection pattern of the lower substrate and the first connection pattern made of the low resistance metal material, thereby making it easier to remove the static electricity.

In addition, by the first and second connection patterns of the two-way pass structure as described above, even if one of them is damaged, there is a structural advantage that can remove the static electricity.

Hereinafter, the present invention will be described in detail with reference to the drawings.

3 is a schematic cross-sectional view of a portion of a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

As illustrated, the transverse electric field type liquid crystal display device 100 includes a liquid crystal layer interposed between the first and second substrates 110 and 160 facing each other and the first and second substrates 110 and 160. 170 and a seal pattern 182 positioned at an edge between the first and second substrates 110 and 160 to prevent leakage of the liquid crystal layer 170.

The first substrate 110 is divided into a display area DA in which a plurality of pixel areas P are defined, and a non-display area NA around the display area DA.

First, referring to the display area DA, the first substrate 110 may include a gate electrode 112, a gate insulating layer 120 covering the gate electrode 112, and the gate on the gate insulating layer 120. The semiconductor layer 126 corresponding to the electrode 112 and formed of the active layer 122 and the ohmic contact layer 124, and the source electrode 132 and the drain electrode 134 spaced apart from each other on the semiconductor layer 126. A thin film transistor Tr is formed. The gate insulating layer 120 is made of an inorganic insulating material such as silicon oxide or silicon nitride. The active layer 122 is made of pure amorphous silicon, and the ohmic contact layer 124 is made of impurity amorphous silicon.

In addition, a gate line (not shown) and a data line (not shown) connected to the thin film transistor Tr are formed. The gate line is connected to the gate electrode 112 of the thin film transistor Tr, and the data line is connected to the source electrode 132 of the thin film transistor Tr. In addition, the gate line and the data line cross each other to define the pixel region P. FIG. That is, the gate line and the data line cross each other to define the pixel area P, and the thin film transistor Tr connected to the gate line and the data line is formed in the pixel area P.

A passivation layer 140 including a drain contact hole 142 exposing the drain electrode 134 of the thin film transistor Tr is formed on the thin film transistor Tr. The protective layer 140 is made of an organic insulating material such as benzocyclobutene (BCB) or photo acryl or an inorganic insulating material such as silicon nitride or silicon oxide.

 The pixel electrode 152 and the common electrode 154 are alternately arranged on the passivation layer 140. The pixel electrode 152 is connected to the drain electrode 134 of the thin film transistor Tr through the drain contact hole 142, and forms a horizontal electric field with the common electrode 154 to form the liquid crystal layer 170. ).

Meanwhile, referring to the non-display area NA, the gate insulating layer 120 and the protective layer 140 are stacked on the first substrate 110, and a connection pattern (above the protective layer 140 is formed). 156 is formed. In addition, a flexible printed circuit board (FPCB) 186 is connected to one side of the connection pattern 156.

The first substrate 110 having the above-described configuration may be referred to as an array substrate.

The second substrate 160 facing the first substrate 110 has a black matrix 162 for blocking light in response to the thin film transistor Tr and a color filter layer on the black matrix 162. 164 is formed. The black matrix 162 and the color filter layer 164 are positioned on the inner side of the second substrate 160 to face the first substrate 110. The black matrix 162 is made of black resin.

In addition, a transparent conductor layer 166 made of a transparent conductive material is formed on an outer surface of the second substrate 160. The transparent conductor layer 166 is configured to emit and remove static electricity generated in the second substrate 160 to the outside. The second substrate 160 having the above-described configuration may be referred to as a color filter substrate.

In the transverse electric field type liquid crystal display device 100, both the pixel electrode 152 and the common electrode 154 are formed on the first substrate 110, which is the lower substrate, and are formed on the second substrate 160, which is the upper substrate. Since both the 162 and the color filter layer 164 are made of an insulating material, the static electricity generated in the second substrate 160 cannot be removed. Therefore, in the present invention, the transparent conductor layer 166 is formed on the outer surface of the second substrate 160 by using a conductive material, thereby serving as a path for static electricity. In addition, since the transverse electric field type liquid crystal display device 100 implements an image by passing light through the second substrate 160, the transparent conductor layer 160 should be made of a transparent material.

Conductive dots 184 are formed to connect the transparent conductor layer 166 on the outer surface of the second substrate 160 and the connection pattern 156 formed on the first substrate 110. have. The conductive dot 184 may be made of silver (Ag).

According to the above configuration, the static electricity generated on the second substrate 160 is transferred to the FPCB 186 through the transparent conductor layer 166, the conductive dot 184, and the connection pattern 156. Since the FPCB 186 is configured to be grounded to ground, static electricity is released as a result.

The connection pattern 156 may be formed of indium-tin-oxide (ITO) or indium-zinc-oxide, which is a transparent conductive material, similarly to the common electrode 154 or the pixel electrode 152. -zinc-oxide, IZO), the connection pattern 156 is exposed to the outside causes a problem that the connection is broken by damage. In addition, because materials such as ITO or IZO have a relatively high resistance, electrical damage is caused by static electricity. In this case, since static electricity generated in the second substrate 160 cannot be removed, damage caused by static electricity occurs in the second substrate 160.

FIG. 4 is a schematic cross-sectional view of a portion of a transverse electric field type liquid crystal display device according to a second embodiment of the present invention to overcome the problems in the first embodiment.

As illustrated, the transverse electric field type liquid crystal display device 200 includes a liquid crystal layer interposed between the first and second substrates 210 and 260 facing each other and the first and second substrates 210 and 260. 270 and a seal pattern 282 positioned at an edge between the first and second substrates 210 and 260 to prevent leakage of the liquid crystal layer 270.

The first substrate 210 is divided into a display area DA in which a plurality of pixel areas P are defined, and a non-display area NA around the display area DA.

First, referring to the display area DA, the first substrate 210 may include a gate electrode 212, a gate insulating film 220 covering the gate electrode 212, and the gate electrode on the gate insulating film 220. The semiconductor layer 226 corresponding to the 212 and formed of the active layer 222 and the ohmic contact layer 224, and the source electrode 232 and the drain electrode 234 spaced apart from each other on the semiconductor layer 226. A thin film transistor Tr is formed. The gate insulating layer 220 is made of an inorganic insulating material such as silicon oxide or silicon nitride. The active layer 222 is made of pure amorphous silicon, and the ohmic contact layer 224 is made of impurity amorphous silicon.

In addition, a gate line (not shown) and a data line (not shown) connected to the thin film transistor Tr are formed. The gate line is connected to the gate electrode 212 of the thin film transistor Tr, and the data line is connected to the source electrode 232 of the thin film transistor Tr. In addition, the gate line and the data line cross each other to define the pixel region P. FIG. That is, the gate line and the data line cross each other to define the pixel area P, and the thin film transistor Tr connected to the gate line and the data line is formed in the pixel area P.

A passivation layer 240 including a drain contact hole 242 exposing the drain electrode 234 of the thin film transistor Tr is formed on the thin film transistor Tr. The protective layer 240 is made of an organic insulating material such as benzocyclobutene (BCB) or photo acryl, or an inorganic insulating material such as silicon nitride or silicon oxide.

 The pixel electrode 252 and the common electrode 254 are alternately arranged on the passivation layer 240. The pixel electrode 252 is connected to the drain electrode 234 of the thin film transistor Tr through the drain contact hole 242, and forms a horizontal electric field with the common electrode 254 to form the liquid crystal layer 270. ).

Meanwhile, referring to the non-display area NA, a first connection pattern 214 is disposed on the first substrate 210, and a gate insulating layer 220 and a protective layer 240 are formed on the first connection pattern 214. ) Are sequentially stacked. In this case, first and second contact holes 244 and 246 exposing both sides of the first connection pattern 214 are formed in the gate insulating layer 220 and the protective layer 240. In addition, the second connection pattern 256 is connected to one side of the first connection pattern 214 through the first contact hole 244 on the protective layer 240, and the FPCB 286 is connected to the protective layer 240. The second contact hole 246 is in contact with the other side of the first connection pattern 214 is connected. That is, the second connection pattern 256 and the FPCB 286 are electrically connected to each other through the first connection pattern 214.

The first connection pattern 214 is made of a low resistance metal material, and is made of the same material on the same layer as the gate electrode 212. Alternatively, the first connection pattern 214 may be formed of the same material on the gate insulating layer 220 and the same layer as the source and drain electrodes 232 and 234. For example, the low resistance metal material is any one of aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), copper (Cu), and copper alloy. The second connection pattern 256 is positioned on the passivation layer 240 and is formed of the same material as the pixel electrode 252 and the common electrode 254. That is, the second connection pattern 256 is made of a transparent conductive material such as ITO or IZO. In this case, the resistance of the material constituting the second connection pattern 256 is greater than the resistance of the material constituting the first connection pattern 214.

The first substrate 210 having the above-described configuration may be referred to as an array substrate.

On the second substrate 260 facing the first substrate 210, a black matrix 262 for blocking light in response to the thin film transistor Tr and a color filter layer disposed on the black matrix 262. 264 is formed. The black matrix 262 and the color filter layer 264 are positioned on the inner side of the second substrate 260 to face the first substrate 210. The black matrix 262 is made of black resin.

In addition, a transparent conductor layer 266 made of a transparent conductive material is formed on an outer surface of the second substrate 260. The transparent conductor layer 266 is configured to emit and remove static electricity generated in the second substrate 260 to the outside. The second substrate 260 having the above-described configuration may be referred to as a color filter substrate.

In addition, a conductive dot 284 connecting the transparent conductor layer 266 on the outer surface of the second substrate 260 and the second connection pattern 256 formed on the first substrate 210. ) Is formed. The conductive dot 284 may be made of silver (Ag).

According to the above configuration, the static electricity generated on the second substrate 260 may cause the transparent conductor layer 266, the conductive dot 284, the second connection pattern 256, and the first connection pattern 214 to be discharged. It is delivered to the FPCB 286 via the FPCB 286, which is configured to ground to ground, resulting in the discharge of static electricity.

In addition, since the second connection pattern 256 made of a transparent conductive material such as ITO is connected to the first connection pattern 214 made of a low resistance metal material, electrical resistance is reduced to prevent electrical damage by static electricity. Can be. In addition, since the first connection pattern 214 is covered by the gate insulating layer 220 and the protective layer 240, damage caused by exposing the connection pattern 156 in the first embodiment is also prevented. .

5 is a schematic cross-sectional view of a part of a transverse electric field type liquid crystal display device according to a third exemplary embodiment of the present invention.

As illustrated, the transverse electric field type liquid crystal display device 300 includes a liquid crystal layer interposed between the first and second substrates 310 and 360 facing each other and the first and second substrates 310 and 360. 370 and a seal pattern 382 positioned at an edge between the first and second substrates 310 and 360 to prevent leakage of the liquid crystal layer 370.

The first substrate 310 is divided into a display area DA in which a plurality of pixel areas P are defined, and a non-display area NA around the display area DA.

First, referring to the display area DA, the first substrate 310 includes a gate electrode 312, a gate insulating layer 320 covering the gate electrode 312, and the gate electrode on the gate insulating layer 320. The semiconductor layer 326 corresponding to the 312 and formed of the active layer 322 and the ohmic contact layer 324, and the source electrode 332 and the drain electrode 334 spaced apart from each other on the semiconductor layer 326. A thin film transistor Tr is formed. The gate insulating layer 320 is made of an inorganic insulating material such as silicon oxide or silicon nitride. The active layer 322 is made of pure amorphous silicon, and the ohmic contact layer 324 is made of impurity amorphous silicon.

In addition, a gate line (not shown) and a data line (not shown) connected to the thin film transistor Tr are formed. The gate line is connected to the gate electrode 312 of the thin film transistor Tr, and the data line is connected to the source electrode 332 of the thin film transistor Tr. In addition, the gate line and the data line cross each other to define the pixel region P. FIG. That is, the gate line and the data line cross each other to define the pixel area P, and the thin film transistor Tr connected to the gate line and the data line is formed in the pixel area P.

A passivation layer 340 including a drain contact hole 342 exposing the drain electrode 334 of the thin film transistor Tr is formed on the thin film transistor Tr. The protective layer 340 is made of an organic insulating material such as benzocyclobutene (BCB) or photo acryl, or an inorganic insulating material such as silicon nitride or silicon oxide.

The pixel electrode 352 and the common electrode 354 are alternately arranged on the passivation layer 340. The pixel electrode 352 is connected to the drain electrode 334 of the thin film transistor Tr through the drain contact hole 342 and forms a horizontal electric field with the common electrode 354 to form the liquid crystal layer 370. ).

Meanwhile, referring to the non-display area NA, a first connection pattern 314 is positioned on the first substrate 310, and a gate insulating layer 320 and a protective layer 340 are formed on the first connection pattern 314. ) Are sequentially stacked. In this case, first and second contact holes 344 and 346 exposing both sides of the first connection pattern 314 are formed in the gate insulating layer 320 and the protective layer 340. In addition, a second connection pattern 356 is formed on the protective layer 340. One end of the second connection pattern 356 is connected in contact with the first connection pattern 314 through the first contact hole 344, and the other end of the second connection pattern 356 is connected to the second contact. The first connection pattern 314 is contacted and connected through the hole 346. In addition, the FPCB 486 is connected to and in contact with the second connection pattern 356.

The first connection pattern 314 is made of a low resistance metal material, and is made of the same material as the gate electrode 312. In contrast, the first connection pattern 314 may be formed of the same material on the gate insulating layer 320 and on the same layer as the source and drain electrodes 332 and 334. For example, the low resistance metal material is any one of aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), copper (Cu), and copper alloy. The second connection pattern 356 is disposed on the passivation layer 340 and is formed of the same material as the pixel electrode 352 and the common electrode 354. That is, the second connection pattern 356 is made of a transparent conductive material such as ITO or IZO. In this case, the resistance of the material constituting the second connection pattern 356 is greater than the resistance of the material constituting the first connection pattern 314.

The first substrate 310 having the above-described configuration may be referred to as an array substrate.

On the second substrate 360 facing the first substrate 310, a black matrix 362 for blocking light in response to the thin film transistor Tr and a color filter layer disposed on the black matrix 362. 364 is formed. The black matrix 362 and the color filter layer 364 are positioned on the inner side of the second substrate 360 to face the first substrate 310. The black matrix 262 is made of black resin.

In addition, a transparent conductor layer 366 made of a transparent conductive material is formed on an outer surface of the second substrate 360. The transparent conductor layer 366 is configured to emit and remove static electricity generated in the second substrate 360 to the outside. The second substrate 360 having the above-described configuration may be referred to as a color filter substrate.

In addition, a conductive dot 384 connecting the transparent conductor layer 366 on the outer surface of the second substrate 360 and the second connection pattern 356 formed on the first substrate 310. ) Is formed. The conductive dot 384 may be made of silver (Ag).

According to the above configuration, the static electricity generated on the second substrate 360 may cause the transparent conductor layer 366, the conductive dot 384, the second connection pattern 356, and the first connection pattern 314 to be discharged. The FPCB 386 is delivered to the FPCB 386, and the FPCB 386 is configured to be grounded to ground, resulting in the discharge of static electricity. The conductive dots 384 are connected in parallel by the FPCB 386, the first connection patterns 314, and the second connection patterns 356, and thus, the first and second connection patterns 314 and 356. ), Even if any one of them is damaged, there is an advantage to maintain the electrical connection.

In addition, since the second connection pattern 356 made of a transparent conductive material such as ITO is connected to the first connection pattern 314 made of a low resistance metal material, electrical resistance is reduced to prevent electrical damage by static electricity. Can be. In addition, since the first connection pattern 314 is covered by the gate insulating layer 320 and the protective layer 340, damage caused by exposing the connection pattern 156 in the first embodiment is also prevented. .

6 is a schematic plan view of a part of an array substrate for a transverse electric field type liquid crystal display device of the present invention.

As illustrated, the pixel area P is defined by crossing each other on the first substrate 310 in which the display area DA and the non-display area NA including the plurality of pixel areas P are defined. The gate wiring 316 and the data wiring 336 are formed. In addition, the thin film transistor Tr connected to the gate line 316 and the data line 336 is formed in each pixel area P. FIG. The thin film transistor Tr may include the gate electrode 312 connected to the gate line 316, the gate insulating layer 320 of FIG. 5 covering the gate electrode 312, and the gate insulating layer 320. The semiconductor layer 326 of FIG. 5 and the semiconductor layer 326 that correspond to the gate electrode 312 and include an active layer 322 of FIG. 5 and an ohmic contact layer 324 of FIG. And a source electrode 332 and a drain electrode 334. The source electrode 332 is connected to the data line 336.

In addition, a pixel electrode 352 connected to the drain electrode 334 of the thin film transistor Tr is positioned in each pixel region P, and a common electrode 354 alternately arranged with the pixel electrode 352 is disposed. It is located. In FIG. 6, the pixel electrode 352 is illustrated as being directly connected to the drain electrode 334. However, as shown in FIG. 5, the pixel electrode 352 is formed on the protective layer 340. It is connected to the drain electrode 334 through 342.

On the other hand, the non-display area NA is connected to the transparent conductor layer formed on the outer surface of the second substrate, which is the upper substrate of the transverse electric field type liquid crystal display device, as described above, to discharge static electricity to the outside ( 390, a gate pad portion 392 for applying a voltage to the gate line 316, and a data pad portion 394 for applying a voltage to the data line 336.

Although not shown, an FPCB is connected to the gate pad portion 392 and the data pad portion 394 so that a voltage is applied from the outside.

In addition, the electrostatic discharge pad portion 390 has the structure described in the first to third embodiments of the present invention shown in FIGS.

Referring to FIG. 5, a first connection pattern 314 is positioned on the first substrate 310, and a gate insulating layer 320 and a protective layer 340 are sequentially stacked on the first connection pattern 314. have. In this case, first and second contact holes 344 and 346 exposing both sides of the first connection pattern 314 are formed in the gate insulating layer 320 and the protective layer 340. In addition, a second connection pattern 356 is formed on the protective layer 340. One end of the second connection pattern 356 is connected in contact with the first connection pattern 314 through the first contact hole 344, and the other end of the second connection pattern 356 is connected to the second contact. The first connection pattern 314 is contacted and connected through the hole 346. In addition, the FPCB 486 is connected to and in contact with the second connection pattern 356.

The first connection pattern 314 is made of a low resistance metal material, and is made of the same material as the gate electrode 312. For example, the low resistance metal material is any one of aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), copper (Cu), and copper alloy. In contrast, the first connection pattern 314 may be formed of the same material on the gate insulating layer 320 and on the same layer as the source and drain electrodes 332 and 334. The second connection pattern 356 is disposed on the passivation layer 340 and is formed of the same material as the pixel electrode 352 and the common electrode 354.

Connecting the transparent conductor layer 366 on the outer surface of the second substrate 360 facing the first substrate 310 and the second connection pattern 356 formed on the first substrate 310. Conductive dots 384 are formed.

According to the above configuration, the static electricity generated on the second substrate 360 may cause the transparent conductor layer 366, the conductive dot 384, the second connection pattern 356, and the first connection pattern 314 to be discharged. The FPCB 386 is delivered to the FPCB 386, and the FPCB 386 is configured to be grounded to ground, resulting in the discharge of static electricity.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art various modifications and changes of the present invention without departing from the spirit and scope of the present invention described in the claims below I can understand that you can.

1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

2A and 2B are cross-sectional views illustrating operations of ON and OFF states of a general transverse electric field type liquid crystal display device, respectively.

3 is a schematic cross-sectional view of a portion of a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

4 is a schematic cross-sectional view of a portion of a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

5 is a schematic cross-sectional view of a part of a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

6 is a schematic plan view of a part of an array substrate for a transverse electric field type liquid crystal display device of the present invention.

Claims (7)

A gate line and a data line intersecting each other in the display area of the first substrate including a display area in which a plurality of pixel areas are defined and a non-display area around the display area; A thin film transistor connected to the gate line and the data line and positioned in each pixel area; A first connection pattern on the first substrate of the non-display area; A protective layer covering the thin film transistor and the first connection pattern and having first and second contact holes respectively exposing one side and the other side of the first connection pattern; A pixel electrode on the passivation layer of the pixel region and connected to the thin film transistor; A common electrode on the passivation layer of the pixel region, the common electrode alternately arranged with the pixel electrode; A second connection pattern on the protective layer and connected to one side of the first connection pattern through the first contact hole; An FPCB disposed on the protective layer and connected to the other side of the first connection pattern through the second contact hole and grounded to ground; A transparent conductor layer positioned on the second side of the second substrate having a first side facing the first substrate and a second side opposite the first side; Conductive dots on one side of which are in contact with the transparent conductor layer and the other side of which is in contact with the second connection pattern; Liquid crystal layer interposed between the first and second substrate Transverse electric field type liquid crystal display device comprising a. A gate line and a data line defining the pixel area by crossing each other in the display area of the first substrate including a display area in which a plurality of pixel areas are defined and a non-display area around the display area; A thin film transistor connected to the gate line and the data line and positioned in each pixel area; A first connection pattern on the first substrate of the non-display area; A protective layer covering the thin film transistor and the first connection pattern and having first and second contact holes respectively exposing one side and the other side of the first connection pattern; A pixel electrode on the passivation layer of the pixel region and connected to the thin film transistor; A common electrode on the passivation layer of the pixel region, the common electrode alternately arranged with the pixel electrode; A second connection pattern positioned on the protective layer and having one side connected to one side of the first connection pattern through the first contact hole and the other side connected to the other side of the first connection pattern through the second contact hole; ; An FPCB positioned on the protective layer and connected to the other side of the second connection pattern and grounded to ground; A transparent conductor layer positioned on the second side of the second substrate having a first side facing the first substrate and a second side opposite the first side; Conductive dots on one side of which are in contact with the transparent conductor layer and the other side of which is in contact with the second connection pattern; Liquid crystal layer interposed between the first and second substrate Transverse electric field type liquid crystal display device comprising a. The method according to claim 1 or 2, And wherein the first connection pattern is formed of a material having a resistance smaller than that of the second connection pattern. The method of claim 3, wherein And wherein the first connection pattern is made of the same material on the same layer as the gate line or the data line, and the second connection pattern is made of the same material on the same layer as the common electrode. The method of claim 3, wherein The first connection pattern is made of any one of aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), copper (Cu), copper alloy, the second connection pattern is characterized in that made of ITO or IZO Electric field type liquid crystal display device. The method according to claim 1 or 2, And the conductive dots are made of silver. The method according to claim 1 or 2, A black matrix on the second surface of the second substrate and corresponding to the thin film transistor; And a color filter disposed on a second surface of the second substrate and corresponding to each pixel area.

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