KR20110026257A - Thin film solar cell - Google Patents

Thin film solar cell Download PDF

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KR20110026257A
KR20110026257A KR1020090084073A KR20090084073A KR20110026257A KR 20110026257 A KR20110026257 A KR 20110026257A KR 1020090084073 A KR1020090084073 A KR 1020090084073A KR 20090084073 A KR20090084073 A KR 20090084073A KR 20110026257 A KR20110026257 A KR 20110026257A
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solar cell
type silicon
thin film
silicon layer
pin structure
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KR101127054B1 (en
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송원진
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송원진
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: A thin film solar cell is provided to increase a condensing function of a whole solar cell by using a plate glass substrate in front side of the solar cell to arrange a plurality of hemi spherical-light absorbing member. CONSTITUTION: In a thin film solar cell, a plurality of hemi spherical-light absorbing members is provided. A condensing unit is arranged in the lower part of the hemi spherical-light absorbing members and has a plurality of solar cells in series. The focus of sunlight through a hemi-spherical light absorbing member is formed in the lower part of the condensing unit. A transparent conductive layer(22), a rear electrode(26), and a rear substrate are laminated on the each cell of the condensing unit respectively.

Description

박막 태양전지{THIN FILM SOLAR CELL}Thin Film Solar Cells {THIN FILM SOLAR CELL}

본 발명은 박막 태양전지에 관한 것으로, 보다 상세하게는 태양빛의 집광효율을 대폭 향상시킨 박막 태양전지에 관한 것이다. The present invention relates to a thin film solar cell, and more particularly, to a thin film solar cell that significantly improves the light condensing efficiency of sunlight.

널리 주지된 바와 같이, 태양광 발전(Photovoltaic Power Generation)은 태양광을 직접 전기로 변환시키는 발전방식으로 그 핵심은 태양전지(Solar Cell 또는 Photovoltaic Cell)이다. 이러한 태양광 발전의 원리는, 반도체의 pn접합으로 만든 태양전지에 반도체의 금지대폭(Eg : Band-gap Energy)보다 큰 에너지를 가진 태양광이 입사되면 전자-정공 쌍이 생성되는데, 이들 전자-정공이 pn 접합부에 형성된 전기장에 의해 전자는 n층으로, 정공은 p층으로 모이게 됨에 따라 pn간에 기전력(광기전력: Photovoltage)이 발생하게 된다. 이 때 양단의 전극에 부하를 연결하면 전류가 흐르게 된다. As is well known, photovoltaic power generation is a power generation method that converts sunlight directly into electricity. The core is a solar cell or a photovoltaic cell. The principle of photovoltaic power generation is that electron-hole pairs are generated when sunlight with energy greater than the band-gap energy (Eg) of a semiconductor is made into a solar cell made of a semiconductor pn junction. The electric field formed at the pn junction causes electrons to gather to n layers and holes to p layers, resulting in electromotive force (photovoltage) between pn. At this time, if a load is connected to the electrodes at both ends, current flows.

이러한 태양전지는 필요에 따라 직·병렬로 연결하여 장기간 자연환경 및 외부 충격에 견딜 수 있는 구조로 만들어 사용하게 되는데, 그 최소 단위를 태양광 모듈(Photovoltaic Module)이라 한다. 그리고 실제 사용부하에 맞추어 모듈을 어레이(Photovoltaic Array) 형태로 구성하여 설치하게 된다.These solar cells are connected to each other in series and parallel as needed to make a structure that can withstand natural environment and external shocks for a long time. The minimum unit is called a photovoltaic module. The module is installed in an array (Photovoltaic Array) according to the actual load.

한편, 박막 태양전지는 기판 증착 물질에 따라 여러 종류로 나뉘는데, 크게 아몰포스실리콘(a-Si) 태양전지, CdTe(카드뮴, 텔루라이드 화합물) 태양전지, CIGS(구리ㆍ인듐ㆍ갈륨ㆍ셀레늄 화합물) 태양전지, 염료감응 태양전지 등으로 구분해 볼 수 있다.On the other hand, thin-film solar cells are divided into various types according to substrate deposition materials. Amorphous silicon (a-Si) solar cells, CdTe (cadmium, telluride compounds) solar cells, CIGS (copper, indium, gallium, selenium compounds) It can be classified into solar cell, dye-sensitized solar cell, etc.

이 중에서도 1980년대부터 상용화하기 시작한 a-Si 분야가 박막 태양전지 시장에서 주도적 입지를 구축하고 있으며, 최근에는 CdTe, CIGS 태양전지도 연구가 활발히 진행돼 시장에서 점유율을 높이고 있다. a-Si 태양전지는 기술 안정성과 다양한 기판 적응성, 시장진입 장벽과 환경 위험 측면에서, CdTe 태양전지는 생산공정과 제조 원가 면에서, CIGS 태양전지는 효율 면에서 각각 비교우위를 가지고 각 고유 영역을 개척하며 발전을 거듭해 갈 것으로 기대되고 있다.Among them, the a-Si field, which has been commercialized since the 1980s, has established a leading position in the thin film solar cell market, and recently, CdTe and CIGS solar cell researches have been actively conducted to increase the market share. a-Si solar cells have comparative advantages in terms of technology stability, various substrate adaptability, market barriers and environmental risks, CdTe solar cells in production process and manufacturing cost, and CIGS solar cells in terms of efficiency. It is expected to continue developing and pioneering.

대표적인 박막 실리콘 태양전지인 아몰포스실리콘(a-Si) 태양전지는 비정질 실리콘을 유리기판 사이에 주입해 만드는 태양전지이다. 기술적으로 가장 안정적이라는 a-Si 태양전지는 기존 결정질 실리콘 태양전지에 비해 낮은 효율 때문에 초기에는 대규모 발전용보다는 시계, 라디오 등 주로 소규모 가전제품의 보조전원 용도로 사용돼 왔지만 최근 이러한 낮은 효율을 극복하기 위해 비정질 실리콘 박막 위에 다결정 실리콘막을 한 겹 더 적층하는 이중접합(Tandem) 또는 그 위에 실리콘 막을 한 겹 더 얹는 삼중접합(Triple Junction) 등 다중접합 구조와 하이브리드 구조 개발로 발전효율을 결정질 실리콘 태양전지 수준으로 높이기 위한 연구가 활발히 진행되고 있다. 특히 최근 TFT LCD 생산기술을 기반으로 하는 국내 전자기업들이 빠르게 박막 태양전지 시장의 중심으로 떠오르고 있어 더욱 기대되는 분야이기 도 하다.Amorphous silicon (a-Si) solar cells, which are representative thin film silicon solar cells, are solar cells made by injecting amorphous silicon between glass substrates. Technically the most stable, a-Si solar cell has been used for auxiliary power of small appliances such as clocks and radios, rather than large scale power generation, because of its lower efficiency than conventional crystalline silicon solar cells. To improve power generation efficiency by developing multi-junction structure and hybrid structure such as double junction (Tandem) for stacking one more polycrystalline silicon film on amorphous silicon thin film, or triple junction (silicon film) on top of it. Research is actively underway to increase this. In particular, domestic electronics companies based on TFT LCD production technology are rapidly emerging as the center of the thin film solar cell market.

하지만, 종래의 박막 태양전지는 태양빛과 직접적으로 흡광하는 유리기판이 평탄하게 형성됨에 따라 태양빛의 집광 내지 흡광효율이 상대적으로 저조한 단점이 있었다. However, the conventional thin film solar cell has a disadvantage in that the light condensation or absorption efficiency of the solar light is relatively low as the glass substrate directly absorbing the sunlight is formed flat.

본 발명은 상기와 같은 점을 감안하여 안출한 것으로, 태양전지의 전면에 평탄형 유리기판을 대체하여 복수의 반구형 흡광부재를 배치함으로써 태양빛의 흡광효율을 향상시킬 수 있고, 이러한 태양빛의 흡광효율 향상을 통해 태양전지 전체의 집광성능을 대폭 향상시킬 수 있는 박막 태양전지를 제공하는 데 그 목적이 있다. The present invention has been made in view of the above, by replacing a flat glass substrate on the front of the solar cell by placing a plurality of hemispherical light absorbing member can improve the light absorption efficiency of the sunlight, the absorption of such sunlight It is an object of the present invention to provide a thin film solar cell that can greatly improve the light collecting performance of the entire solar cell by improving efficiency.

상기와 같은 목적을 달성하기 위한 본 발명에 의한 박막 태양전지는, Thin film solar cell according to the present invention for achieving the above object,

반구형 구조로 구성되고, 투명재질로 이루어진 복수의 반구형 흡광부재; 및 A plurality of hemispherical light absorbing members having a hemispherical structure and made of a transparent material; And

상기 복수의 반구형 흡광부재의 하면에 배치되고, 복수의 전지셀이 직렬연결되는 집광부;를 포함하고, And a light collecting part disposed on a lower surface of the plurality of hemispherical light absorbing members and connected to the plurality of battery cells in series.

상기 반구형 흡광부재를 통해 흡광되는 태양빛의 초점이 집광부의 하부에 형성되며, The focus of sunlight absorbed by the hemispherical light absorbing member is formed at the lower portion of the light collecting portion,

상기 집광부의 각 전지 셀은 투명전도층, pin구조, 후면전극, 후면기판 순으로 적층된 구조인 것을 특징으로 한다. Each battery cell of the light collecting unit has a structure in which a transparent conductive layer, a pin structure, a back electrode, and a back substrate are stacked in this order.

상기 pin구조는 p형 실리콘층/i형 실리콘층/n형 실리콘층으로 이루어지는 것을 특징으로 한다. The pin structure is characterized in that the p-type silicon layer / i-type silicon layer / n-type silicon layer.

상기 pin구조는 제1 pin구조 및 제2 pin구조가 이중으로 접합된 것을 특징으로 한다. The pin structure is characterized in that the first pin structure and the second pin structure is a double junction.

상기 pin구조는 제1 pin구조, 제2 pin구조, 제3 pin구조가 삼중으로 접합된 것을 특징으로 한다. The pin structure is characterized in that the first pin structure, the second pin structure, the third pin structure is bonded in triple.

이상과 같은 본 발명에 의하면, 태양전지의 전면에 평탄형 유리기판을 대체하여 복수의 반구형 흡광부재를 배치함으로써 태양빛의 흡광효율을 향상시킬 수 있고, 이러한 태양빛의 흡광효율 향상을 통해 태양전지 전체의 집광성능을 대폭 향상시킬 수 있는 장점이 있다. According to the present invention as described above, by replacing a flat glass substrate on the front of the solar cell by placing a plurality of hemispherical light absorbing member can improve the light absorption efficiency of the sunlight, the solar cell through the improvement of the light absorption efficiency of the solar light There is an advantage that can greatly improve the overall light collecting performance.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1 내지 도 3은 본 발명의 일 실시예에 따른 박막 태양전지를 도시한다. 1 to 3 show a thin film solar cell according to an embodiment of the present invention.

도시된 바와 같이, 본 발명에 의한 박막 태양전지는 복수의 반구형 흡광부재(10) 및 이 반구형 흡광부재(10)의 하부에 배치되는 집광부(20)를 포함한다. As shown, the thin film solar cell according to the present invention includes a plurality of hemispherical light absorbing members 10 and a light collecting part 20 disposed under the hemispherical light absorbing member 10.

각 반구형 흡광부재(10)는 글래스재질 등과 같이 투명재질이 반구형으로 형성되고, 이에 반구형 흡광부재(10)는 그 표면적이 종래의 평탄형 유리기판에 비해 대폭 증대되므로 태양빛의 흡광효율이 매우 증대될 수 있다. Each hemispherical light absorbing member 10 has a hemispherical transparent material such as a glass material, and the hemispherical light absorbing member 10 has a large increase in surface area compared to a conventional flat glass substrate, so that the absorption efficiency of sunlight is greatly increased. Can be.

집광부(20)는 복수의 반구형 흡광부재(10)를 통해 흡광된 태양빛을 받도록 직렬연결된 복수의 전지 셀로 구성될 수 있다. The light collecting unit 20 may be configured of a plurality of battery cells connected in series to receive sunlight absorbed through the plurality of hemispherical light absorbing members 10.

또한, 집광부(20)는 반구형 흡광부재(10)의 하면에 밀착되고, 이에 반구형 흡광부재(10)를 통해 흡광된 태양빛은 집광부(20)의 하부에 초점(F)을 형성할 수 있다. In addition, the light collecting part 20 is in close contact with the bottom surface of the hemispherical light absorbing member 10, and thus the sunlight absorbed through the hemispherical light absorbing member 10 may form a focal point F at the lower portion of the light collecting part 20. have.

집광부(20)의 각 전지 셀은 투명전도층(22), p형 실리콘층(23), i형 실리콘층(24), n형 실리콘층(25), 후면전극(26), 후면기판(27)을 포함한다. Each battery cell of the light collecting part 20 includes a transparent conductive layer 22, a p-type silicon layer 23, an i-type silicon layer 24, an n-type silicon layer 25, a back electrode 26, and a back substrate ( 27).

투명전도층(22)은 빛의 투과성이 높으면서 전기가 통하는 성질을 가지는 얇은 박막으로, 금속 박막, 산화물 박막(ITO, ZnO, SnO2) 등으로 구성될 수 있다. 특히, 본 발명의 투명전도층(22)으로는 안정성 및 내마모성이 우수한 산화물 박막이 유리할 수 있다. 또한, 투명전도층(22)은 요철화된 구조로 구성됨으로써 light trapping(빛 가둠)을 최대한 증가시키거나 전지내에서의 빛 반사를 최소화 할 수도 있다. The transparent conductive layer 22 is a thin thin film having high light transmittance and electrical conductivity. The transparent conductive layer 22 may be formed of a metal thin film, an oxide thin film (ITO, ZnO, SnO 2), or the like. In particular, an oxide thin film having excellent stability and wear resistance may be advantageous as the transparent conductive layer 22 of the present invention. In addition, the transparent conductive layer 22 may be of a concave-convex structure to increase the light trapping as much as possible or to minimize light reflection in the battery.

또한, 투명전도층(22)의 상부에는 도 3에 도시된 바와 같이 그리드전극(21)이 형성된다. In addition, a grid electrode 21 is formed on the transparent conductive layer 22 as shown in FIG. 3.

투명전도층(22)의 하부에는 p형 실리콘층(23)/i형 실리콘층(24)/n형 실리콘층(25)으로 이루어진 pin구조가 배치된다. A pin structure made of a p-type silicon layer 23 / an i-type silicon layer 24 / an n-type silicon layer 25 is disposed below the transparent conductive layer 22.

p형 실리콘층(23), i형 실리콘층(24), n형 실리콘층(25)은 a-Si(아몰퍼스 실리콘) 등과 같은 비정질 실리콘재질로 구성되고, 특히 a-Si(아몰퍼스 실리콘)는 방사선 손상에 강하고, 성막비용이 경제적인 장점이 있다. The p-type silicon layer 23, the i-type silicon layer 24, and the n-type silicon layer 25 are made of an amorphous silicon material such as a-Si (amorphous silicon), and in particular, a-Si (amorphous silicon) is radiation It is resistant to damage, and the cost of film formation is economical.

이러한 pin구조의 하부에는 후면전극(26)이 배치되고, 후면전극(26)은 도 3에 도시된 바와 같이 산화아연층(26a, ZnO) 및 은층(26b, Ag)으로 구성될 수 있다. A rear electrode 26 is disposed below the pin structure, and the rear electrode 26 may be formed of zinc oxide layers 26a and ZnO and silver layers 26b and Ag, as shown in FIG. 3.

후면전극(26)의 하부에는 유리, 스테인레스 등과 같은 후면기판(27)이 배치된다. A lower substrate 27 such as glass, stainless steel, or the like is disposed below the rear electrode 26.

이상과 같은 본 발명은 반구형 흡광부재(10)의 표면적인 상대적으로 증대된 구조로 인해 태양광의 흡광효율이 향상될 뿐만 아니라 도 1 및 도 2에 도시된 바와 같이, 반구형 흡광부재(10)의 곡면구조로 인해 집광부(20)의 하부에 초점(F)이 형성된다. 이에, 집광부(20)의 각 전지셀들은 반구형 흡광부재(10)의 흡광작용에 의해 그 집광성능이 대폭 향상되는 장점이 있다. The present invention as described above not only improves the light absorption efficiency of solar light due to the relatively increased structure of the hemispherical light absorbing member 10, as shown in Figure 1 and 2, the curved surface of the hemispherical light absorbing member 10 Due to the structure, the focal point F is formed at the lower portion of the light collecting unit 20. Thus, each of the battery cells of the light collecting unit 20 has an advantage that the light collecting performance is greatly improved by the light absorbing action of the hemispherical light absorbing member 10.

도 5는 본 발명의 집광부(20)에 대한 다른 실시예를 도시한 것으로, 집광부(20)의 pin구조가 이중으로 접합된 구조를 도시한다. 즉, 집광부(20)는 제1 pin구조(23, 24, 25)과 제2 pin구조(23a, 24a, 25a)가 상호 접합된 탠덤구조로 형성될 수 있다. 5 illustrates another embodiment of the light collecting unit 20 of the present invention, and shows a structure in which the pin structure of the light collecting unit 20 is doublely bonded. That is, the light collecting part 20 may be formed as a tandem structure in which the first pin structures 23, 24, 25 and the second pin structures 23a, 24a, and 25a are bonded to each other.

제1 pin구조(23, 24, 25)는 제1 p형 실리콘층(23)/제1 i형 실리콘층(24)/제1 n형 실리콘층(25)으로 이루어지고, 제1 p형 실리콘층(23), 제1 i형 실리콘층(24), 제1 n형 실리콘층(25)은 a-Si(아몰퍼스 실리콘) 등과 같은 비정질 실리콘재질로 구성된다. The first pin structure 23, 24, 25 is formed of the first p-type silicon layer 23 / the first i-type silicon layer 24 / the first n-type silicon layer 25, and the first p-type silicon. The layer 23, the first i-type silicon layer 24, and the first n-type silicon layer 25 are made of an amorphous silicon material such as a-Si (amorphous silicon).

제2pin구조(23a, 24a, 25a)는 제2 p형 실리콘층(23a)/제2 i형 실리콘층(24a)/제2 n형 실리콘층(25a)으로 이루어지고, 제2 p형 실리콘층(23a), 제2 n형 실리콘층(25a)은 a-Si(아몰퍼스 실리콘)으로 구성되며, 제2 i형 실리콘층(24a)은 a-Si(아몰퍼스 실리콘) 또는 a-SiGe(비정질 실리콘-게르마늄)으로 구성될 수 있다.The second pin structures 23a, 24a, and 25a are composed of the second p-type silicon layer 23a / the second i-type silicon layer 24a / the second n-type silicon layer 25a, and the second p-type silicon layer 23a, the second n-type silicon layer 25a is composed of a-Si (amorphous silicon), and the second i-type silicon layer 24a is a-Si (amorphous silicon) or a-SiGe (amorphous silicon- Germanium).

도 6은 본 발명의 집광부(20)에 대한 또 다른 실시예를 도시한 것으로, 집 광부(20)의 pin구조가 삼중으로 접합된 구조를 도시한다. 즉, 집광부(20)는 제1 pin구조(23, 24, 25), 제2 pin구조(23a, 24a, 25a), 제3 pin구조(23b, 24b, 25b)가 삼중 접합된 구조로 형성될 수 있다. FIG. 6 illustrates another embodiment of the light collecting unit 20 of the present invention, and illustrates a structure in which the pin structure of the light collecting unit 20 is triple-bonded. That is, the light collecting part 20 is formed of a structure in which the first pin structures 23, 24, 25, the second pin structures 23a, 24a, and 25a and the third pin structures 23b, 24b and 25b are triple bonded. Can be.

제1 pin구조(23, 24, 25)는 제1 p형 실리콘층(23)/제1 i형 실리콘층(24)/제1 n형 실리콘층(25)으로 이루어지고, 제1 p형 실리콘층(23), 제1 i형 실리콘층(24), 제1 n형 실리콘층(25)은 a-Si(아몰퍼스 실리콘) 등과 같은 비정질 실리콘재질로 구성된다. The first pin structure 23, 24, 25 is formed of the first p-type silicon layer 23 / the first i-type silicon layer 24 / the first n-type silicon layer 25, and the first p-type silicon. The layer 23, the first i-type silicon layer 24, and the first n-type silicon layer 25 are made of an amorphous silicon material such as a-Si (amorphous silicon).

제2pin구조(23a, 24a, 25a)는 제2 p형 실리콘층(23a)/제2 i형 실리콘층(24a)/제2 n형 실리콘층(25a)으로 이루어지고, 제2 p형 실리콘층(23a), 제2 n형 실리콘층(25a)은 a-Si(아몰퍼스 실리콘)으로 구성되며, 제2 i형 실리콘층(24a)은 a-SiGe(비정질 실리콘-게르마늄)으로 구성될 수 있다.The second pin structures 23a, 24a, and 25a are composed of the second p-type silicon layer 23a / the second i-type silicon layer 24a / the second n-type silicon layer 25a, and the second p-type silicon layer The second n-type silicon layer 25a may be made of a-Si (amorphous silicon), and the second i-type silicon layer 24a may be made of a-SiGe (amorphous silicon-germanium).

제3pin구조(23b, 24b, 25b)는 제3 p형 실리콘층(23b)/제3 i형 실리콘층(24b)/제3 n형 실리콘층(25b)으로 이루어지고, 제3 p형 실리콘층(23b), 제3 n형 실리콘층(25b)은 a-Si(아몰퍼스 실리콘)으로 구성되며, 제3 i형 실리콘층(24b)은 a-SiGe(비정질 실리콘-게르마늄)으로 구성될 수 있다.The third pin structure 23b, 24b, 25b is composed of the third p-type silicon layer 23b / third i-type silicon layer 24b / third n-type silicon layer 25b, and the third p-type silicon layer The third n-type silicon layer 25b may be made of a-Si (amorphous silicon), and the third i-type silicon layer 24b may be made of a-SiGe (amorphous silicon-germanium).

도 1은 본 발명의 일 실시예에 따른 박막 태양전지를 도시한 구성도이다. 1 is a block diagram showing a thin film solar cell according to an embodiment of the present invention.

도 2는 도 1의 화살표 A부분을 확대하여 도시한 도면이다. FIG. 2 is an enlarged view of a portion A of FIG. 1.

도 3은 도 2의 화살표 B부분을 확대하여 도시한 도면이다. 3 is an enlarged view illustrating an arrow B portion of FIG. 2.

도 4는 도 3에 대한 다른 실시예를 도시한 도면이다. 4 illustrates another embodiment of FIG. 3.

도 5는 도 3에 대한 또 다른 실시예를 도시한 도면이다. FIG. 5 is a diagram illustrating another embodiment of FIG. 3.

<도면의 주요 부분에 대한 부호의 간단한 설명><Brief description of symbols for the main parts of the drawings>

10: 반구형 흡광부재 20: 집광부10: hemispherical light absorbing member 20: light collecting part

22: 투명전도층 23: p형 실리콘층22: transparent conductive layer 23: p-type silicon layer

24: i형 실리콘층 25: n형 실리콘층24: i-type silicon layer 25: n-type silicon layer

26: 후면전극 27: 후면기판26: rear electrode 27: rear substrate

Claims (4)

반구형 구조로 구성되고, 투명재질로 이루어진 복수의 반구형 흡광부재; 및 A plurality of hemispherical light absorbing members having a hemispherical structure and made of a transparent material; And 상기 복수의 반구형 흡광부재의 하면에 배치되고, 복수의 전지셀이 직렬연결되는 집광부;를 포함하고, And a light collecting part disposed on a lower surface of the plurality of hemispherical light absorbing members and connected to the plurality of battery cells in series. 상기 반구형 흡광부재를 통해 흡광되는 태양빛의 초점이 집광부의 하부에 형성되며, The focus of sunlight absorbed by the hemispherical light absorbing member is formed at the lower portion of the light collecting portion, 상기 집광부의 각 전지 셀은 투명전도층, pin구조, 후면전극, 후면기판 순으로 적층된 구조인 것을 특징으로 하는 박막 태양전지.Each battery cell of the light collecting unit is a thin film solar cell, characterized in that the stacked structure in the order of a transparent conductive layer, a pin structure, a back electrode, a back substrate. 제1항에 있어서, The method of claim 1, 상기 pin구조는 p형 실리콘층/i형 실리콘층/n형 실리콘층으로 이루어지는 것을 특징으로 하는 박막 태양전지.The pin structure is a thin film solar cell comprising a p-type silicon layer / i-type silicon layer / n-type silicon layer. 제1항에 있어서, The method of claim 1, 상기 pin구조는 제1 pin구조 및 제2 pin구조가 이중으로 접합된 것을 특징으로 하는 박막 태양전지.The pin structure is a thin film solar cell, characterized in that the first pin structure and the second pin structure is a double junction. 제1항에 있어서, The method of claim 1, 상기 pin구조는 제1 pin구조, 제2 pin구조, 제3 pin구조가 삼중으로 접합된 것을 특징으로 하는 박막 태양전지.The pin structure is a thin film solar cell, characterized in that the first pin structure, the second pin structure, the third pin structure is bonded in triple.
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