KR20110026197A - Organic photoresist stripper composition - Google Patents

Abstract

PURPOSE: An organic photo-resist removing composition is provided to improve the solubility of organic materials using an organic solvent. CONSTITUTION: An organic photo-resist removing composition includes the following: One or more compounds are selected from a group including a compound represented by chemical formula 1 and quaternary ammonium hydroxide. A compound is represented by chemical formula 2. A compound is represented by chemical formula 3. One or more compounds are selected from a group including saccharides, sugar alcohols, C3-C10 hydroxyl cycloalkane compounds, aromatic hydroxyl compounds, acetylene alcohols, carboxylic acid compounds, anhydrides of the carboxylic acid compounds, and triazole compounds. One or more organic solvents are selected from a group including alkylene glycol-based compounds.

Description

Composition for removing organic photoresist {ORGANIC PHOTORESIST STRIPPER COMPOSITION}

The present invention relates to a composition for removing an organic photoresist, and more particularly, to a photoresist, a photoresist residue, a photoresist cured through an ion implantation process, and the like from a substrate in a manufacturing process of a flat panel display or a semiconductor device. It relates to a composition for removing an organic photoresist for peeling.

The manufacture of a flat panel display or a semiconductor device includes a process of forming a metal film or an insulating film layer, a process of forming a photoresist layer, an exposure process of transferring a mask pattern to the photoresist, an etching process of etching a film along the pattern, and a photoresist. It proceeds to the peeling process of removing. Recently, as the wiring spacing becomes narrower, dry etching and high temperature ashing processes using reactive gases are becoming important processes in the semiconductor process. These processes produce residues formed by strongly adhering a polymer to an insulating film or a metal film. Such photoresist residues, i.e., polymers, are usually removed with a photoresist stripper.

In addition, the ion implantation process that forms the source / drain at the front of the production line during the semiconductor process is a process in which the ions of group 3 or 5 are accelerated into an electric field and injected into the silicon so that the energy is large enough to penetrate the surface of the silicon. It is a process performed for the purpose of partially changing the electrical properties such as conductivity, threshold voltage by doping impurity ions. In order to form the source / drain regions, a high dose amount of ion implantation is performed to accelerate curing of the upper portion of the photoresist. Therefore, it is very difficult to remove this photoresist. When the high temperature ashing treatment is performed to remove the photoresist, the volume of the photoresist decreases, but since the curing of the photoresist film is intensified and the polymer is formed by the puffing action due to the pressure increase inside the photoresist, it is difficult to remove them. it's difficult.

As the photoresist removal composition for removing the photoresist, the photoresist residue remaining after the plasma etching or the high temperature ashing process, the photoresist cured after ion implantation, and the polymer formed by the puffing action, an amine composition and hydroxylamine Compositions composed of compounds and the like are known. For example, US Pat. No. 4,617,251 discloses certain amine compounds [eg, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, or mixtures thereof) and polar solvents (eg, N -Methyl-2-pyrrolidone (NMP), tetrahydrofurfuryl alcohol, dimethylglutarate, sulfolane, gamma-butyllactone (GBL), N, N-dimethylacetamide and mixtures thereof) A topographic photoresist removal composition is disclosed, and US Pat. No. 5,279,771 discloses a photoresist removal composition comprising hydroxylamine, alkanolamine and any polar solvent.

However, the amine-based photoresist removal composition may not completely remove the polymer remaining after plasma etching and high temperature ashing or the photoresist cured after ion implantation, and also cause corrosion problems of metal films such as aluminum. .

In addition, a composition for removing a photoresist composed of an alkali compound, a carboxylic acid, water, and the like has been proposed separately from the composition for removing an amine photoresist as described above. For example, Japanese Patent Laid-Open No. 11-125916 discloses a photoresist removing composition composed of amine, water, α-Hydroxycarbonic acid, an organic solvent, and the like. No. discloses a sidewall removal liquid consisting of alkanolamine, organic acid, and water, and Korean Patent Publication No. 10-0503702 discloses one selected from carboxyl group-containing acidic compounds, alkanolamines, and certain quaternary ammonium hydroxides. The composition for photoresist removal which contains the above basic compound, a sulfur-containing anticorrosive agent, and water, and has a pH of 3.5-5.5 is disclosed.

However, such a photoresist removal composition is inferior to plasma etching or high temperature ashing during the highly integrated semiconductor device fabrication process, and to the polymer and cured photoresist removal properties generated after ion implantation or to corrosion of an insulating film such as a metal film or polysilicon. There is a problem.

It is an object of the present invention to provide an organic photoresist removal composition capable of effectively removing photoresist and photoresist residues remaining after hard baking, plasma etching, and high temperature ashing without corrosion of the film.

SUMMARY OF THE INVENTION An object of the present invention is to provide a composition for removing an organic photoresist that has an excellent function even in a step of removing a cured photoresist after an ion implantation step of doping impurities to form a source / drain region in a process of front end of a production line. will be.

SUMMARY OF THE INVENTION An object of the present invention is to provide a composition for removing a photoresist that can effectively remove the corrosion of the film generated by the amine and improve the dissolving power between organic substances and the cleaning effect when mixed with the alkanolamine compound using an organic solvent. It is.

The present invention (A) at least one compound selected from the group consisting of a compound represented by the formula (1) and a quaternary ammonium hydroxide; (B) a compound represented by the following formula (2); (C) a compound represented by the following formula (3); (D) 1 selected from the group consisting of sugars, sugar alcohols, C ₃ to C ₁₀ hydroxy cycloalkane compounds, aromatic hydroxy compounds, acetylene alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds More than one compound; And (E) at least one organic solvent component selected from the group consisting of alkylene glycol-based compounds.

<Formula 1>

<Formula 2>

<Formula 3>

In Chemical Formulas 1 to 3,

R ₁ and R ₂ are each independently C ₁ to C ₁₀ straight or branched chain hydrocarbon substituted or unsubstituted with hydrogen or an amino group;

R ₃ is a bond or a C ₁ to C ₁₀ straight or branched hydrocarbon;

R ₄ -is C ₁ -C ₁₀ straight or branched chain hydrocarbon;

n and m are each independently 1-5;

R ₅ is hydrogen, C ₁ -C ₅ straight or branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures;

R ₆ is C ₁ to C ₅ straight or branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures;

R ₇ and R ₈ are each independently C ₁ -C ₅ straight or branched chain hydrocarbons;

R ₉ is hydrogen or C ₁ -C ₇ straight, branched or cyclic hydrocarbon;

X and Y are each independently hydrogen or a C ₁ to C ₇ linear, branched, or cyclic hydrocarbon, or X and Y may combine to form a ring.

The composition for removing organic photoresists of the present invention removes photoresist and photoresist residues remaining after hard baking, plasma etching and high temperature ashing very effectively. In particular, in the process of the front end of the production line, it shows an excellent effect in the peeling process of the cured photoresist after the ion implantation process of doping the impurities to form the source / drain region. In addition, the organic solvent is used to improve the solubility between organic substances and to enhance the post-cleaning effect when mixed with the alkanol-based amine compound and to effectively remove the corrosion of the film generated by the amine.

The composition for removing an organic photoresist of the present invention includes (A) at least one compound selected from the group consisting of a compound represented by the following Formula 1 and a quaternary ammonium hydroxide; (B) a compound represented by the following formula (2); (C) a compound represented by the following formula (3); (D) 1 selected from the group consisting of sugars, sugar alcohols, C ₃ to C ₁₀ hydroxy cycloalkane compounds, aromatic hydroxy compounds, acetylene alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds More than one compound; And (E) at least one organic solvent selected from the group consisting of alkylene glycol-based compounds.

<Formula 1>

<Formula 2>

<Formula 3>

In Chemical Formulas 1 to 3,

R ₁ and R ₂ are each independently C ₁ to C ₁₀ straight or branched chain hydrocarbon substituted or unsubstituted with hydrogen or an amino group;

R ₃ is a direct bond or a C ₁ to C ₁₀ straight or branched hydrocarbon;

R ₄ is C ₁ -C ₁₀ straight or branched chain hydrocarbon;

n and m are each independently 1-5;

R ₅ is hydrogen, C ₁ -C ₅ straight or branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures;

R ₆ is C ₁ to C ₅ straight or branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures;

R ₇ and R ₈ are each independently C ₁ -C ₅ straight or branched chain hydrocarbons;

R ₉ is hydrogen or C ₁ -C ₇ straight, branched or cyclic hydrocarbon;

X and Y are each independently hydrogen or a C ₁ to C ₇ linear, branched, or cyclic hydrocarbon, or X and Y may combine to form a ring.

Here, when m is 2 or more, R ₄ may be different from each other.

The at least one compound selected from the group consisting of the compound represented by the formula (1) and the quaternary ammonium hydroxide included in the organic photoresist removing composition of the present invention is 1 to 70% by weight based on the total weight of the composition It is preferably included in 1 to 30% by weight. If the above-mentioned range is satisfied, sufficient peeling effect is exerted on the cured photoresist, and environmental problems that may occur due to excessive excess, increase in processing cost of contaminants, and corrosion of metal films such as aluminum, copper, and titanium Problems can be avoided.

It is preferable that the compound represented by the said Formula (1) is an alkanolamine. The alkanolamine is N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-ethyl Diethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, N-methylisopropanolamine, N-ethylisopropanolamine, N-propylisopropanolamine, 2-aminopropan-1-ol, N-methyl-2-aminopropane -1-ol, N-ethyl-2-aminopropan-1-ol, 1-aminopropan-3-ol, N-methyl-1-aminopropan-3-ol, N-ethyl-1-aminopropan-3 -Ol, 1-aminobutan-2-ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan-2-ol, 2-aminobutan-1-ol, N-methyl -2-aminobutan-1-ol, N-ethyl-2-aminobutan-1-ol, 3-aminobutan-1-ol, N-methyl-3-aminobutan-1-ol, N-ethyl-3 -Aminobutan-1-ol, 1-aminobutan-4-ol, N-methyl-1-aminobutan-4-ol, N-ethyl-1-a Nobutan-4-ol, 1-amino-2-methylpropan-2-ol, 2-amino-2-methylpropan-1-ol, 1-aminopentan-4-ol, 2-amino-4-methylpentane -1-ol, 2-aminohexan-1-ol, 3-aminoheptan-4-ol, 1-aminooctan-2-ol, 5-aminooctan-4-ol, 1-aminopropan-2,3- Diol, 2-aminopropane-1,3-diol, tris (oxymethyl) aminomethane, 1,2-diaminopropan-3-ol, 1,3-diaminopropan-2-ol and 2- (2- It is more preferable that it is 1 type or 2 types chosen from the group which consists of aminoethoxy) ethanol. Of these, monoethanolamine is most preferred.

The quaternary ammonium hydroxide is tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, monomethyltripropylammonium hydroxide It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of a seed, (2-hydroxyethyl) tripropyl ammonium hydroxide, and (1-hydroxypropyl) trimethyl ammonium hydroxide. Among these, tetramethylammonium hydroxide is more preferable.

The compound represented by Formula (B) 2 included in the organic photoresist removing composition of the present invention is preferably included in 10 to 40% by weight based on the total weight of the composition. When included in the above-described range, excellent removal effects of residues such as oxide residues, resist polymers, and the like can be expected in the periphery of the via holes or the lower layer.

The compound of Formula (B) is preferably alkoxy N-hydroxyalkyl alkanamide. Representative examples of such compounds include 3-methoxy N-hydroxyethyl propanamide (in Formula 2, R ₅ is hydrogen, R ₆ is —CH ₂ CH ₂ —, R ₇ is —CH ₂ CH ₂ —, R ₈ is -CH ₃ ).

The compound represented by Formula (B) 2 may be prepared by the following Scheme 1.

<Scheme 1>

The variables of Scheme 1 are all the same as the variables of Formula 2, and R ₁₀ is a C ₁ ~ C ₅ hydrocarbon.

The alkanolamine of Scheme 1 is preferably monoethanolamine in which R5 is hydrogen and R6 is -CH2CH2-, and alkylalkoxyalkanoate is R7 is -CH2CH2-, R8 is -CH3, and R6 is -CH3. Preference is given to methyl 3-methoxy propanoate.

At this time, in order to supply sufficient energy for the reaction to occur, the reaction temperature is preferably maintained at room temperature to 120 ° C, and preferably 80 ° C to 90 ° C.

As can be seen in Scheme 1, the reaction between the amine and the ester produces an amide and at the same time an alcohol. The alcohol is a low-boiling substance (e.g. methanol has a boiling point of about 60 ° C.) with 1 to 5 carbon atoms, while the amide is a high boiling substance (e.g. methoxy N-hydroxyethyl propanamide). Boiling point is about 200 ° C.). Thus, alcohol (V) is removed by fractional distillation to give an amide compound. In the case of fractional distillation, it is preferable to facilitate the fractional distillation by nitrogen bubbling treatment in the reactor or to reduce the pressure in the reactor to promote vaporization of alcohol. Of course, you can use both methods at the same time.

The compound represented by the formula (C) 3 included in the organic photoresist removing composition of the present invention is preferably included in 0.1 to 20% by weight based on the total weight of the composition. When included in the above-described range, excellent effects can be expected in removing photoresist and photoresist residues remaining after high temperature ashing.

The compound represented by the formula (C) is one or two or more selected from the group consisting of hydroxylamine, N-methylhydroxylamine, N-ethylhydroxylamine and N, N-diethylhydroxylamine It is preferable. Among these, hydroxylamine is more preferable.

1 selected from the group consisting of (D) sugars, sugar alcohols, aromatic hydroxy compounds, alkyn alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds included in the organic photoresist removing composition of the present invention. The at least one compound is preferably included in an amount of 1 to 40% by weight based on the total weight of the composition. When included in the above-described range, the anti-corrosion effect on the metal film such as aluminum, copper, and titanium is sufficiently exhibited, and it is possible to avoid the problem of excessively included so as to lower the activity of the amine.

The sugars are glycerin aldehyde, ascorbic acid, iso (iso-) ascorbic acid, threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, taga Monosaccharides having 3 to 6 carbon atoms, such as toss, allose, altrose, gulose, idose, talos, sorbose, psicose, and fructose; It is preferably one or two or more selected from the group consisting of disaccharides such as trihalose.

The sugar alcohols include threitol, erythritol, adonitol, arabitol, xylitol, thalitol, sorbitol, mannitol, iditol, dulcitol and inositol It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of).

The hydroxy cycloalkane compound of C ₃ to C ₁₀ is preferably cyclohexane-1,4-dimethanol.

The aromatic hydroxy compound is phenol, cresol, xylenol, pyrocatechol, resorcinol, hydroquinone, pyrogallol, 1,2,4-benzenetriol, salicyl alcohol, p-hydride Hydroxybenzyl alcohol, p-hydroxyphenethyl alcohol, p-aminophenol, m-aminophenol, diaminophenol, aminoresorcinol, p-hydroxybenzoic acid, o-hydroxybenzoic acid, 2,4-dihydroxy It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of benzoic acid, 2, 5- dihydroxy benzoic acid, 3, 4- dihydroxy benzoic acid, 3, 5- dihydroxy benzoic acid, and gallic acid.

The alkyn alcohols include ethynal alcohol, 2-butyne-1,4-diol, 3,5-dimethyl-1-hexyn-3-ol, 2-methyl-3-butyn-2-ol, 3-methyl-1-pentin -3-ol, 3,6-dimethyl-4-octin-3,6-diol, 2,4,7,9-tetramethyl-5-decin-4,7-diol and 2,5-dimethyl It is preferable that it is 1 type (s) or 2 or more types chosen from the group which consists of -3-hexine-2,5-diol.

The carboxylic acid compound and its anhydride are formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, benzoic acid, phthalic acid, 1,2,3-benzenetricarboxyl The acid, glycolic acid, diglycolic acid, lactic acid, maleic acid, citric acid, acetic anhydride, phthalic anhydride, maleic anhydride, and one or two or more selected from the group consisting of succinic anhydride and salicylic acid are preferable.

The triazole compound is benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole and dihydroxypropylbenzo It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of a triazole.

It is more preferable that the said (D) component is 1 type, or 2 or more types chosen from sugar alcohols which consist of sorbitol, mannitol, iditol, dulcitol, and inositol.

At least one organic solvent selected from the group consisting of (E) alkylene glycol-based compounds included in the organic photoresist removing composition of the present invention is preferably included in an amount of 5 to 30% by weight based on the total weight of the composition. When the above-mentioned range is satisfied, the problem of degrading the activity of the compound that serves as the peeling of the cured or polymer-modified photoresist can be avoided, and the content of other compounds exhibiting the peeling effect is relatively decreased, thereby lowering the peeling effect. Can be avoided or problems caused by metal film corrosion.

The alkylene glycol-based compound is ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl glycol, propylene glycol monomethyl ether, butylene glycol, dibutylene glycol, tributylene glycol It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of a dipropylene glycol monomethyl ether, and a tripropylene glycol monomethyl ether. Among these, ethylene glycol is more preferable.

Since the organic photoresist removing composition of the present invention is organic, deionized water is not used.

The composition for removing an organic photoresist of the present invention may be prepared by advantageously mixing the above-mentioned compounds in a predetermined amount, and the mixing method is not particularly limited and various known methods may be applied.

The peeling method using the composition for removing the organic photoresist of the present invention may be performed by a method commonly known in the art, and the substrate having the photoresist cured or modified with a polymer may be contacted with the photoresist removing composition. If it is a method, a favorable result can be obtained. As the peeling method according to the present invention, deposition, spraying, or a method using deposition and spraying is applied. When delamination by spraying, spraying, or immersion and spraying, the temperature is usually 10 to 100 ° C., preferably 20 to 80 ° C., and the immersion, spray, or immersion and spraying time is usually 30 seconds to 180 minutes. Preferably, it is 1 to 20 minutes, but is not strictly applied in the present invention, and may be appropriately selected by those skilled in the art.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

Examples 1-4, Comparative Examples 1-6: Preparation of Photoresist Removal Composition

To prepare a composition for removing the photoresist of Examples 1 to 4 and Comparative Examples 1 to 6 by mixing the components shown in Table 1 and Table 2 in a predetermined amount. In Table 1 and Table 2, the units of the content are all in weight percent.

Example 1 Example 2 Example 3 Example 4 (A) MEA 5 10 10 15 TMAH 10 10 10 10 (B) NHAA 32 27 27 20 (C) HA 3 3 3 10 Sorbitol 30 - - - (D) Mannitol - 30 30 20 Cyclohexane1,4-dimethanol - - - 5 (E) Ethylene glycol 20 20 20 20

Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 DGA 60 40 30 - 40 - MEA - 40 - - - HA 15 - - 15 - - MMP - - 10 - - - EDA - - 25 - - - MDEA - - - 60 - - AEEA - - - - 40 - APM - - - - - 30 MMEA - - - - - 40 Pyrocatechol 5 10 - 5 10 10 Resorcinol - - - - - - Sorbitol - - 15 - - 10 H ₂ O 20 10 20 20 10 10

MEA: monoethanolamine TMAH: tetramethylammonium hydroxide

NHAA (N-hydroxyalkyl alkanamide): 3-methoxy N-hydroxyethyl propanamide

HA: hydroxyamine DGA: diglycolamine

APM: aminopropylmorpholine MDEA: methyldiethanolamine

MMP: Methylmethoxypropanoate EDA: Ethylenediamine

AEEA: aminoethylethanolamine MMEA: monomethylethanolamine

Test Example 1: Peeling ability and corrosion test

After the plasma etching or high temperature ashing, the cured photoresist film and the remaining residue adhered to the metal film or the insulating film were immersed in the photoresist removing composition of Examples and Comparative Examples at a temperature of 65 ° C. for 20 minutes. Thereafter, the specimen was removed from the stripping solution, rinsed with ultrapure water for 1 minute, and then dried using nitrogen gas. In addition, the scanning electron microscope was used to evaluate the removal of the cured photoresist film and residual residue and the corrosion of the metal film and the insulating film exposed to the chemical liquid. Removal and corrosion evaluation was performed according to the following criteria, the results are shown in Table 3 below.

Peeling ability evaluation criteria

O: Any polymer remaining around or on the metal, pads, or via-holes is completely removed.

△: 70% or more of polymer remaining around or on the surface of metal, pad, via hole

X: Almost no polymer remaining around or on metal, pads, or via-holes

Corrosion Evaluation Criteria

O: When there is no corrosion in the metal, upper and lower parts of the pad, around the via hole or the lower film

(Triangle | delta): When metal, upper and lower parts of a pad, a via hole, or a lower film | membrane has corrosion.

X: High corrosion on metal, upper and lower parts of pad, via hole or lower

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Peelability O O O O O X △ △ X X causticity O O O O △ △ X △ △ △

Referring to Table 3, the composition for removing the organic photoresist of the present invention showed excellent function compared to the composition for removing the aqueous photoresist in peelability and corrosion. However, the compositions of the comparative examples showed poor function in at least one of peelability and corrosiveness.

Claims (8)

(A) at least one compound selected from the group consisting of a compound represented by the following formula (1) and a quaternary ammonium hydroxide; (B) a compound represented by the following formula (2); (C) a compound represented by the following formula (3); (D) 1 selected from the group consisting of sugars, sugar alcohols, C ₃ to C ₁₀ hydroxy cycloalkane compounds, aromatic hydroxy compounds, acetylene alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds More than one compound; And (E) An organic photoresist removing composition comprising at least one organic solvent selected from the group consisting of alkylene glycol compounds: <Formula 1>

<Formula 2>

<Formula 3>

In Chemical Formulas 1 to 3, R ₁ and R ₂ are each independently C ₁ to C ₁₀ straight or branched chain hydrocarbon substituted or unsubstituted with hydrogen or an amino group; R ₃ is a bond or a C ₁ to C ₁₀ straight or branched hydrocarbon; R- ₄ is C ₁ -C ₁₀ straight or branched chain hydrocarbon; n and m are each independently 1-5; R ₅ is hydrogen, C ₁ -C ₅ straight or branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures; R ₆ is C ₁ to C ₅ straight or branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures; R ₇ and R ₈ are each independently C ₁ -C ₅ straight or branched chain hydrocarbons; R ₉ is hydrogen or C ₁ -C ₇ straight, branched or cyclic hydrocarbon; X and Y are each independently hydrogen or C ₁ ~ C ₇ linear, branched, or cyclic hydrocarbon, or X and Y may combine to form a ring. The method according to claim 1, In terms of the total weight of the composition, 1 to 70% by weight of at least one compound selected from the group consisting of the compound represented by Formula (A) and quaternary ammonium hydroxide; 10 to 40 wt% of the compound represented by Formula (B); 0.1 to 20% by weight of the compound represented by Formula (C) 3; (D) sugar, sugar alcohol, C ₃ ~ C ₁₀ hydroxy cycloalkane compound, aromatic hydroxy compound, acetylene alcohol, carboxylic acid compound, anhydride of carboxylic acid compound, and selected from the group consisting of triazole compounds 1 to 40% by weight of at least one compound; And The composition for removing an organic photoresist, characterized in that 5 to 30% by weight of one or more compounds selected from the group consisting of the (E) alkylene glycol-based compound. The method according to claim 1, The compound represented by Formula 1 is N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-ethyldi Ethanolamine, monomethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, N-methylisopropanolamine, N-ethylisopropanolamine, N-propylisopropanolamine, 2-aminopropan-1-ol, N-methyl-2 -Aminopropan-1-ol, N-ethyl-2-aminopropan-1-ol, 1-aminopropan-3-ol, N-methyl-1-aminopropan-3-ol, N-ethyl-1-amino Propan-3-ol, 1-aminobutan-2-ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan-2-ol, 2-aminobutan-1-ol, N-methyl-2-aminobutan-1-ol, N-ethyl-2-aminobutan-1-ol, 3-aminobutan-1-ol, N-methyl-3-aminobutan-1-ol, N- Ethyl-3-aminobutan-1-ol, 1-aminobutan-4-ol, N-methyl-1-aminobutane -4-ol, N-ethyl-1-aminobutan-4-ol, 1-amino-2-methylpropan-2-ol, 2-amino-2-methylpropan-1-ol, 1-aminopentane-4 -Ol, 2-amino-4-methylpentan-1-ol, 2-aminohexan-1-ol, 3-aminoheptan-4-ol, 1-aminooctan-2-ol, 5-aminooctan-4- Ol, 1-aminopropane-2,3-diol, 2-aminopropane-1,3-diol, tris (oxymethyl) aminomethane, 1,2-diaminopropan-3-ol, 1,3-diamino A composition for removing an organic photoresist, characterized in that one or two selected from the group consisting of propan-2-ol and 2- (2-aminoethoxy) ethanol. The method according to claim 1, The quaternary ammonium hydroxide is tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, monomethyltripropylammonium hydroxide Seed, (2-hydroxyethyl) tripropylammonium hydroxide and (1-hydroxypropyl) trimethylammonium hydroxide, the organic photoresist removing composition, characterized in that one or two or more selected from the group consisting of. . The method according to claim 1, (B) The compound represented by the formula (2) is 3-methoxy N-hydroxyethyl propanamide, characterized in that the organic photoresist removing composition. The method according to claim 1, (C) the compound represented by the formula (3) is one or two or more selected from the group consisting of hydroxylamine, N-methylhydroxylamine, N-ethylhydroxylamine and N, N-diethylhydroxylamine Composition for removing organic photoresist, characterized in that. The method according to claim 1, The sugar alcohol is sorbitol, mannitol, xylitol, iditol (iditol), dulcitol (dulcitol) and inositol (inositol) is one or more selected from the group consisting of organic photoresist removing composition, characterized in that. The method according to claim 1, The (E) alkylene glycol-based compound is ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl glycol, propylene glycol monomethyl ether, butylene glycol, dibutylene glycol, tributyl An ethylene glycol, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether is one or two or more selected from the group consisting of organic photoresist removing composition.