KR101730649B1 - Organic photoresist stripper composition - Google Patents

Abstract

The present invention relates to a composition for removing organic photoresist. The composition for removing organic photoresist of the present invention very effectively removes residual photoresist and photoresist residue after hard baking, plasma etching and hot ashing without corrosion of the film. Further, the present invention is also effective in the process of peeling the photoresist after the ion implantation process for doping impurities to form the source / drain region in the process of the production line front end.

Photoresist, polymer, peeling, corrosive, organic

Description

ORGANIC PHOTORESIST STRIPPER COMPOSITION [0001]

The present invention relates to a composition for removing an organic photoresist, and more particularly, to a composition for removing an organic photoresist, which comprises a photoresist, a photoresist residue, a photoresist cured through an ion implantation process, And removing the organic photoresist.

The manufacture of the flat panel display device or the semiconductor device is carried out by a process including the steps of forming a metal film or an insulating film layer, forming a photoresist layer, exposing the mask pattern to a photoresist, etching the film along the pattern, To the peeling step. Recently, dry etching using reactive gas and high temperature annealing have become important processes in the semiconductor process as the wiring interval becomes narrower. By these processes, residues that are formed by the polymer being strongly adhered to the insulating film or the metal film are generated. The photoresist residue, that is, the polymer, is usually removed with a photoresist stripper.

In addition, during the semiconductor process, the ion implantation process that forms the source / drain at the front of the production line is a process of injecting ions of Group 3 or Group 5 into the silicon by accelerating to an electric field so as to penetrate the surface of the silicon, Is doped with impurity ions to partially change electrical properties such as conductivity and threshold voltage. In order to form the source / drain regions, the ion implantation process of a high dose is performed, so that the curing of the top portion of the photoresist is accelerated. Therefore, it is very difficult to remove the photoresist. When a high-temperature heat treatment is performed to remove the photoresist, the volume of the photoresist is reduced, but the hardening of the photoresist film is intensified and the polymer is formed by the pumping action due to the pressure rise inside the photoresist. it's difficult.

Examples of the composition for removing the photoresist, the photoresist residue remaining after the plasma etching or the high-temperature ashing process, the photoresist after the ion implantation, and the polymer formed by the puffing action include amine-based compositions, A compound composed of a compound and the like are known. For example, U.S. Patent No. 4,617,251 discloses a process for the preparation of a compound of formula (I) wherein a specific amine compound [such as 2- (2-aminoethoxy) ethanol, 2- (NMP), tetrahydrofurfuryl alcohol, dimethyl glutarate, sulfolane, gamma-butyl lactone (GBL), N, N-dimethylacetamide and mixtures thereof. Discloses compositions for topographical photoresist removal, and U.S. Patent No. 5,279,771 discloses compositions for removing photoresists comprising hydroxylamine, alkanolamine, and any polar solvent.

However, the composition for removing the amine-based photoresist has a problem that it can not completely remove the cured photoresist after plasma etching and high-temperature ashing and after implanting the remaining polymer or ion, and also causes a problem of corrosion of a metal film such as aluminum do.

In addition to the composition for removing the amine-based photoresist, a composition for removing a photoresist composed of an alkaline compound, a carboxylic acid, and water has been proposed. For example, Japanese Patent Laid-Open No. 11-125916 discloses a composition for removing photoresist composed of amine, water,? -Hydroxycarbonic acid, an organic solvent, and the like, and Japanese Patent Laid- Korean Patent Laid-Open Publication No. 10-0503702 discloses a sidewall removal liquid comprising alkanolamine, organic acid, and water, and Korean Patent Publication No. 10-0503702 discloses a sidewall removal liquid comprising a carboxyl group-containing acidic compound, an alkanolamine, and a specific quaternary ammonium hydroxide Or more of a basic compound, a sulfur-containing antiseptic agent, and water, and having a pH of 3.5 to 5.5.

However, such a composition for removing a photoresist has problems such as plasma etching or high temperature ashing during the process of manufacturing a highly integrated semiconductor device, deterioration of polymer and cured photoresist removability after ion implantation or corrosion of an insulating film such as a metal film or polysilicon There is a problem.

It is an object of the present invention to provide a composition for removing organic photoresist which can effectively remove residual photoresist and photoresist residue after hard baking, plasma etching and hot ashing without corrosion of the film.

 It is an object of the present invention to provide a composition for removing organic photoresist which exerts an excellent function in a process of peeling a cured photoresist after an ion implantation process for doping an impurity to form a source / will be.

An object of the present invention is to provide a composition for removing organic photoresist which can improve the dissolving power between organic materials by using an organic solvent, improve the cleaning effect upon mixing with an alkanolamine compound, and effectively remove the corrosion of a film generated by amines .

(A) at least one compound selected from the group consisting of compounds represented by the following general formula (1) and quaternary ammonium hydroxides; (B) a compound represented by the following formula (2); (C) a compound selected from the group consisting of saccharides, sugar alcohols, C ₃ -C ₁₀ hydroxycycloalkane compounds, aromatic hydroxy compounds, acetylenic alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds More than one species; And (D) at least one organic solvent selected from the group consisting of alkylene glycol-based compounds.

≪ Formula 1 >

(2)

In the above formulas (1) and (2)

R ₁ and R ₂ are each independently a hydrogen or a C ₁ -C ₁₀ linear or branched hydrocarbon substituted or unsubstituted with an amino group;

R ₃ is a direct bond or a C ₁ -C ₁₀ linear or branched hydrocarbon;

R ₄ is a C ₁ -C ₁₀ linear or branched hydrocarbon;

n and m are each independently 1 to 5;

R ₅ is hydrogen, a C ₁ to C ₅ linear or branched hydrocarbon, or an aromatic hydrocarbon having 1 to 3 ring structures;

R < ₆ > is a linear or branched C ₁ -C ₅ hydrocarbon or an aromatic hydrocarbon having 1 to 3 ring structures;

R ₇ and R ₈ are each independently a C ₁ to C ₅ linear or branched hydrocarbon;

R ₉ is hydrogen or a C ₁ to C ₇ linear, branched or cyclic hydrocarbon.

The composition for removing organic photoresist of the present invention very effectively removes residual photoresist and photoresist residue after hard baking, plasma etching and hot ashing. Particularly, in the process of the front end of the production line, an excellent effect is obtained also in the process of peeling the cured photoresist after the ion implantation process of doping the impurity to form the source / drain region. In addition, the use of an organic solvent improves the solubility of the organic material and improves the post-cleaning effect upon mixing with the alkanol-based amine compound, and effectively removes the corrosion of the film caused by the amine.

The composition for removing organic photoresist of the present invention comprises (A) at least one compound selected from the group consisting of a compound represented by the following formula (1) and a quaternary ammonium hydroxide; (B) a compound represented by the following formula (2); (C) a compound selected from the group consisting of saccharides, sugar alcohols, C ₃ -C ₁₀ hydroxycycloalkane compounds, aromatic hydroxy compounds, acetylenic alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds More than one species; And (D) an alkylene glycol-based compound.

≪ Formula 1 >

(2)

In the above formulas (1) and (2)

R ₁ and R ₂ are each independently a hydrogen or a C ₁ -C ₁₀ linear or branched hydrocarbon substituted or unsubstituted with an amino group;

R ₃ is a direct bond or a C ₁ -C ₁₀ linear or branched hydrocarbon;

R ₄ is a C ₁ -C ₁₀ linear or branched hydrocarbon;

n and m are each independently 1 to 5;

R ₅ is hydrogen, a C ₁ to C ₅ linear or branched hydrocarbon, or an aromatic hydrocarbon having 1 to 3 ring structures;

R < ₆ > is a linear or branched C ₁ -C ₅ hydrocarbon or an aromatic hydrocarbon having 1 to 3 ring structures;

R ₇ and R ₈ are each independently a C ₁ to C ₅ linear or branched hydrocarbon;

R ₉ is hydrogen or a C ₁ to C ₇ linear, branched or cyclic hydrocarbon.

Here, when m is 2 or more, R ₄ may not be the same as each other.

The compound (A) contained in the organic photoresist removing composition of the present invention and at least one compound selected from the group consisting of the compound represented by the formula (1) and the quaternary ammonium hydroxide is 1 to 70% by weight based on the total weight of the composition By weight, and 1 to 30% by weight. When the above-mentioned range is satisfied, sufficient peeling effect is exhibited for the cured photoresist, and there is an environmental problem that may occur due to too much inclusion, an increase in processing cost of contaminants, a problem of corrosion of a metal film such as aluminum, copper, Problems and the like can be avoided.

The alkanolamine may be selected from the group consisting of N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, Diethanolamine, diisopropanolamine, diisopropanolamine, triisopropanolamine, N-methylisopropanolamine, N-ethylisopropanolamine, N-propylisopropanolamine, 2-aminopropane- 1-ol, N-ethyl-2-aminopropane-3-ol, Ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan- Amino-but-1-ol, N-methyl-3-aminobutan-1-ol, N-ethyl- Ol, 1-aminobutan-4-ol, N-methyl-1-aminobutan-4-ol, N- 2-methylpropane-1-ol, 1-aminopentan-4-ol, 2-amino-4-methylpentane 1-ol, 2-aminohexan-1-ol, 3-aminoheptan-4-ol, Diol, 2-aminopropane-1,3-diol, tris (oxymethyl) aminomethane, 1,2-diaminopropane- Aminoethoxy) ethanol, and more preferably one kind or two kinds. Of these, monoethanolamine is most preferred.

The quaternary ammonium hydroxide may be selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, monomethyltripropylammonium hydroxide (2-hydroxyethyl) tripropylammonium hydroxide, and (1-hydroxypropyl) trimethylammonium hydroxide. Of these, tetramethylammonium hydroxide is more preferred.

The compound represented by the general formula (2) (B) contained in the organic photoresist removing composition of the present invention is preferably contained in an amount of 10 to 40% by weight based on the total weight of the composition. In the range described above, excellent removal effects of residues such as oxide residues and resist polymers on the vicinities of the via holes and the lower film can be expected.

The compound of formula (B) is preferably an alkoxy N-hydroxyalkyl alkanamide. Representative examples of such compounds include 3-methoxy N-hydroxyethylpropanamide wherein R ₂ is hydrogen, R ₃ is -CH ₂ CH ₂ -, R ₄ is -CH ₂ CH ₂ - R ₅ may be the case of -CH _3).

The compound represented by formula (2) (B) may be prepared by the following reaction scheme (1).

<Reaction Scheme 1>

The variables in the above Reaction Scheme 1 are all the same as those in Formula 2, and R ₁₀ is a C ₁ to C ₅ hydrocarbon.

The alkanolamine of Reaction Scheme 1 is preferably a monoethanolamine in which R ₅ is hydrogen and R ₆ is -CH ₂ CH ₂ -, and as the alkylalkoxyalkanoate, R ₇ is -CH ₂ CH ₂ - R ₈ is -CH ₃ , and R ₆ is -CH ₃ , methyl 3-methoxy propanoate is preferable.

At this time, in order to supply sufficient energy to cause the reaction, it is preferable that the reaction temperature is maintained at a room temperature to 120 ° C and 80 ° C to 90 ° C.

As shown in Scheme 1, when an amine is reacted with an ester, an amide is produced and an alcohol is produced. The alcohol is a C 1 to C 5 alcohol having a low boiling point (e.g., the boiling point of methanol is about 60 ° C.), while the amide is a material with a high boiling point (eg, methoxy N-hydroxyethylpropanamide The boiling point is about 200 ° C). Thus, the alcohol (V) is removed by fractional distillation to obtain an amide compound. During fractional distillation, it is preferable to perform nitrogen bubbling treatment in the reaction vessel to promote fractional distillation or to reduce the pressure in the reaction vessel to promote vaporization of alcohol. Of course, you can use both methods at the same time.

(D) a compound selected from the group consisting of saccharides, sugar alcohols, aromatic hydroxy compounds, alkynyl alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds contained in the composition for removing organic photoresist of the present invention It is preferable that the above-mentioned compounds are contained in an amount of 1 to 40% by weight based on the total weight of the composition. When it is included in the above-mentioned range, the corrosion inhibiting effect against the metal film such as aluminum, copper, and titanium is sufficiently exhibited, and the problem of deteriorating the activity of the amine due to excessive amount can be avoided.

The saccharides may be selected from the group consisting of glycerin aldehyde, ascorbic acid, iso- ascorbic acid, treos, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, Monosaccharides having 3 to 6 carbon atoms such as tosses, aloses, altrose, gulose, idose, talose, sorbose, psicose and fructose; Trihalose, and two saccharides such as trihalose are preferable.

The sugar alcohols may be selected from the group consisting of threitol, erythritol, adonitol, arabitol, xylitol, talitol, sorbitol, mannitol, iditol, dulcitol and inositol ) Or a combination of two or more thereof.

The C ₃ -C ₁₀ hydroxycycloalkane compound is preferably cyclohexane-1,4-dimethanol.

Wherein the aromatic hydroxy compound is selected from the group consisting of phenol, cresol, xylenol, pyrocatechol, resorcinol, hydroquinone, pyrogallol, 1,2,4-benzenetriol, salicyl alcohol, Hydroxybenzoic acid, p-hydroxyphenethyl alcohol, p-aminophenol, m-aminophenol, diaminophenol, aminoresorcinol, p-hydroxybenzoic acid, o-hydroxybenzoic acid, 2,4-dihydroxy Benzoic acid, 2,5-dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid and gallic acid.

The alkyne alcohol may be selected from the group consisting of ethyne alcohol, 2-butyne-1,4-diol, 3,5-dimethyl-1-hexyn- 3-ol, 3,6-dimethyl-4-octyne-3,6-diol, 2,4,7,9-tetramethyl-5-decyn- 3-hexyne-2,5-diol, and the like.

The carboxylic acid compound and an anhydride thereof may be in the form of an acid such as formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, benzoic acid, phthalic acid, It is preferably one or more selected from the group consisting of acid, glycolic acid, diglycolic acid, lactic acid, malic acid, citric acid, acetic anhydride, phthalic anhydride, maleic anhydride, succinic anhydride and salicylic acid.

The triazole compound may be selected from the group consisting of benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole and dihydroxypropylbenzo Triazole, and the like.

The component (C) is more preferably one or more selected from sugar alcohols consisting of sorbitol, mannitol, iditol, dulcitol and inositol.

It is preferable that at least one organic solvent selected from the group consisting of alkylene glycol compounds (D) contained in the organic photoresist removing composition of the present invention is contained in an amount of 5 to 30% by weight based on the total weight of the composition. When the above-mentioned range is satisfied, it is possible to avoid the problem of deteriorating the activity of the compound which serves as the peeling function of the hardened or polymer-degraded photoresist, and the content of other compounds exhibiting the peeling effect is relatively reduced to deteriorate the peeling effect And the problem of causing metal film corrosion can be avoided.

The alkylene glycol compound may be at least one selected from the group consisting of ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl glycol, propylene glycol monomethyl ether, butylene glycol, dibutylene glycol, tributylene glycol, Dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether. Of these, ethylene glycol is more preferable.

Since the composition for removing organic photoresist of the present invention is organic, no deionized water is used.

The composition for removing photoresist of the present invention can be prepared by mixing the above-mentioned compounds in a predetermined amount, and the mixing method is not particularly limited and various known methods can be applied.

The peeling method using the composition for removing organic photoresist of the present invention can be carried out by a method commonly known in the art and can be carried out by a method in which a composition for removing a photoresist and a substrate having a photoresist that is cured or polymer- If the method is used, good results can be obtained. As the peeling method according to the present invention, a method using deposition, spraying, or deposition and spraying is applied. In the case of peeling by immersion, spraying, or immersion and spraying, the temperature for peeling is usually from 10 to 100 캜, preferably from 20 to 80 캜, and the immersion, spraying or immersion and spraying time is usually from 30 seconds to 180 minutes , Preferably 1 minute to 20 minutes, but is not strictly applied in the present invention, and can be appropriately selected by a person skilled in the art.

Hereinafter, the present invention will be described in more detail by way of examples. However, the following Examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following Examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

Examples 1 to 4 and Comparative Examples 1 to 6: Preparation of composition for removing organic photoresist

The components shown in Tables 1 and 2 were mixed in predetermined amounts to prepare photoresist removing compositions of Examples 1 to 4 and Comparative Examples 1 to 6. The units of the contents in Table 1 and Table 2 are all% by weight.

Example 1 Example 2 Example 3 Example 4 (A) MEA 10 15 25 15 TMAH 10 10 10 10 (B) NHAA 30 25 25 30 (C) Sorbitol 30 - 25 - Mannitol - - - 30 Dissytol - 28 - - Cyclohexane 1,4-Dimethanol - 2 5 - (D) Ethylene glycol 20 20 10 15

Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 DGA 60 40 30 - 40 - MEA - 40 - - - HA 15 - - 15 - - MMP - - 10 - - - EDA - - 25 - - - MDEA - - - 60 - - AEEA - - - - 40 - APM - - - - - 30 MMEA - - - - - 40 Catechol 5 10 - 5 10 10 Resorcinol - - - - - - Sorbitol - - 15 - - 10 H ₂ O 20 10 20 20 10 10

MEA: monoethanolamine TMAH: tetramethylammonium hydroxide

NHAA (N-hydroxyalkylalkanamide): 3-methoxy N-hydroxyethylpropanamide

DGA: diglycolamine HA: hydroxyamine

MMP: methylmethoxypropanoate EDA: ethylene diamine

MDEA: methyldiethanolamine AEEA: aminoethylethanolamine

APM: aminopropylmorpholine MMEA: monomethylethanolamine

Test Example 1: Peeling ability and corrosion test

After the plasma etching or high-temperature ashing, the cured photoresist film and the residual residue adhered to the metal film or the insulating film were immersed in the composition for removing photoresist of Examples and Comparative Examples at a temperature of 65 占 폚 for 20 minutes. Thereafter, the specimen was taken out from the peeling solution, rinsed with ultra-pure water for 1 minute, and dried using nitrogen gas. Then, the removal of the cured photoresist film and residues and the corrosion of the metal film and the insulating film exposed to the chemical solution were evaluated using a scanning electron microscope. The removability and the corrosion resistance were evaluated according to the following criteria, and the results are shown in Table 3 below.

<Evaluation criteria for stripping ability>

O: The polymer remaining on the surface of metal, pad, via hole, or surface is completely removed.

Δ: 70% or more of the polymer remaining on the metal, pad, via hole or on the surface is removed

X: The polymer remaining around the metal, pad, via hole, or surface is hardly removed.

<Corrosivity Evaluation Standard>

O: There is no corrosion on the upper and lower parts of the metal, the pad, the vicinity of the via hole and the lower film.

△: Corrosion on the upper and lower parts of metal, pad, around the via hole and the lower film

X: The metal, the upper and lower parts of the pad, the vicinity of the via hole and the lower film are highly corrosive.

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Peelability O O O O △ △ X △ △ △ △ causticity O O O O △ △ △ X △ △ △

Referring to Table 3, the composition for removing organic photoresist of the present invention exhibited excellent functions in terms of peelability and corrosiveness compared to the composition for removing water-based photoresist. However, the compositions of the comparative examples exhibited deficient functions in at least one of peeling and corrosion resistance.

Claims (8)

In the total weight of the composition, (A) 1 to 70% by weight of a compound represented by the following formula (1) and quaternary ammonium hydroxide; (B) 10 to 40% by weight of a compound represented by the following general formula (2); (C) a compound selected from the group consisting of saccharides, sugar alcohols, C ₃ -C ₁₀ hydroxycycloalkane compounds, aromatic hydroxy compounds, acetylenic alcohols, carboxylic acid compounds, anhydrides of carboxylic acid compounds and triazole compounds From 1 to 40% by weight of a compound of at least one species; And And 5 to 30% by weight of at least one organic solvent selected from the group consisting of (D) an alkylene glycol-based compound, The quaternary ammonium hydroxide may be selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, monomethyltripropylammonium hydroxide (2-hydroxyethyl) tripropylammonium hydroxide, and (1-hydroxypropyl) trimethylammonium hydroxide, and at least one member selected from the group consisting of The composition for removing organic photoresist according to claim 1, &Lt; Formula 1 >

(2)

In the above formulas (1) and (2) R ₁ and R ₂ are each independently a hydrogen or a C ₁ -C ₁₀ linear or C ₃ -C ₁₀ branched chain hydrocarbon unsubstituted or substituted with an amino group; R ₃ is a direct bond or a C ₁ to C ₁₀ straight chain or C ₂ to C ₁₀ branched chain hydrocarbon; R ₄ is a C ₁ to C ₁₀ linear or C ₂ to C ₁₀ branched hydrocarbon; n and m are each independently 1 to 5; R ₅ is hydrogen, C ₁ ~ C ₅ straight or branched-chain C ₃ ~ C ₁₀ hydrocarbon group or one to three rings (ring), and aromatic hydrocarbons (aromatic hydrocarbon) having a structure; R ₆ is C ₁ ~ C ₅ straight or C ₂ ~ C ₁₀ is a branched chain hydrocarbon or aromatic hydrocarbon having 1 to 3 ring structures; R ₇ is a C ₁ to C ₅ linear or C ₂ to C ₁₀ branched hydrocarbon; R ₈ is a C ₁ to C ₅ linear or C ₃ to C ₁₀ branched hydrocarbon. delete The method according to claim 1, The compound represented by Formula 1 may be selected from the group consisting of N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, Diisopropanolamine, diisopropanolamine, triisopropanolamine, N-methylisopropanolamine, N-ethylisopropanolamine, N-propylisopropanolamine, 2-aminopropane-1-ol, N-methyl- 1-ol, N-methyl-1-aminopropane-3-ol, N-ethyl-1-amino 2-ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan- 1-ol, N-methyl-3-aminobutan-1-ol, N- 3-aminobutan-1-ol, 1-aminobutan-4-ol, N-methyl- Amino-2-methylpropan-1-ol, 1-aminopentan-4- Ol, 2-amino-4-methylpentan-1-ol, 2-aminohexan-1-ol, 3-aminoheptan- 1,3-diol, tris (oxymethyl) aminomethane, 1,2-diaminopropane-3-ol, 1,3-diaminopropane 2-ol, and 2- (2-aminoethoxy) ethanol. delete The method according to claim 1, Wherein the compound represented by the formula (2) is 3-methoxy N-hydroxyethylpropanamide. The method according to claim 1, Wherein the sugar alcohols are at least one selected from the group consisting of sorbitol, mannitol, xylitol, iditol, dulcitol, and inositol. The method according to claim 1, The (D) alkylene glycol-based compound may be at least one selected from the group consisting of ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl glycol, propylene glycol monomethyl ether, butylene glycol, dibutylene glycol, tributyl Wherein the organic photoresist composition is at least one selected from the group consisting of polyglycol ether, polyglycol ether, polyglycol ether, polyglycol glycol, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether. The method according to claim 1, Wherein the alkylene glycol compound (D) is ethylene glycol.