KR20110020382A - Epoxy resin molding compound with superior marking resolution - Google Patents
Epoxy resin molding compound with superior marking resolution Download PDFInfo
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- KR20110020382A KR20110020382A KR1020090077970A KR20090077970A KR20110020382A KR 20110020382 A KR20110020382 A KR 20110020382A KR 1020090077970 A KR1020090077970 A KR 1020090077970A KR 20090077970 A KR20090077970 A KR 20090077970A KR 20110020382 A KR20110020382 A KR 20110020382A
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- epoxy resin
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 45
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 45
- 150000001875 compounds Chemical class 0.000 title abstract description 5
- 238000000465 moulding Methods 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000003086 colorant Substances 0.000 claims abstract description 25
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 22
- 239000007822 coupling agent Substances 0.000 claims abstract description 10
- 239000000654 additive Substances 0.000 claims abstract description 9
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000004848 polyfunctional curative Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 22
- 239000008393 encapsulating agent Substances 0.000 claims description 12
- 238000010330 laser marking Methods 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000003566 sealing material Substances 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
- 239000004408 titanium dioxide Substances 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 6
- 239000000049 pigment Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229920001568 phenolic resin Polymers 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- -1 dicyclopentadienyl epoxy resins Chemical compound 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 238000004040 coloring Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
본 발명은 반도체칩 몰딩용 수지 조성물로서, 좀더 구체적으로 착색제로서 이산화티타늄(TiO2)을 사용하여 착색제(또는 안료)로서 카본블랙(Carbon Black)을 사용하였을 때보다 마킹 선명도가 개선되고 와이어 탑 마진 확보가 가능하여 박형의 패키지, 특히, 큐, 에프, 엔(QFN : Quad Flad No-lead)에서 장점을 발휘할 수 있는 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물에 관한 것이다.The present invention is a resin composition for semiconductor chip molding, and more specifically, marking clarity is improved and wire top margin is more than when carbon dioxide (TiO 2 ) is used as a colorant (or pigment) using titanium dioxide (TiO 2 ) as a colorant. The present invention relates to an epoxy resin encapsulant composition having excellent marking clarity, which can be secured and exhibits advantages in a thin package, particularly, Q, F, and Quad Flad No-lead (QFN).
EMC 조성물은 집적회로(IC), 대용량 집적회로(LSI), 트랜지스터 및 다이오드 등 전자 부품 또는 반도체 물질을 캡슐화하는 물질로 널리 사용되고 있다. EMC는 에폭시 수지, 경화제, 경화 촉매 등의 매트릭스에 실리카 등의 무기물을 충진하고 유변특성을 향상시키기 위해 실리콘 고무 등을 첨가하기도 한다. EMC compositions are widely used as materials for encapsulating electronic components or semiconductor materials such as integrated circuits (ICs), large capacity integrated circuits (LSIs), transistors, and diodes. EMC also adds silicone rubber to fill the matrix of epoxy resins, curing agents, curing catalysts, etc. with inorganic materials such as silica and to improve rheological properties.
IC, LSI 등의 반도체 소자의 밀봉 방법으로서, 에폭시 수지 조성물의 트랜스퍼 성형이 저비용, 대량생산에 적절하며, 채용된지 오래되고, 신뢰성의 점에서도 에폭시 수지나 경화제인 페놀 수지의 개량에 의해 특성의 향상이 도모되어 왔다. 그러나, 최근의 전자기기의 소형화, 경량화, 고성능화의 시장 동향에 있어서, 반도체의 고집적화도 해마다 진행되고, 또 반도체 장치의 표면 실장화가 촉진되는 가운데, 반도체 밀봉용 에폭시 수지 조성물에의 요구는 더욱 더 어려워지고 있다. 이 때문에, 종래부터의 에폭시 수지 조성물에서는 해결할 수 없는 문제점도 나와 있다.As a sealing method for semiconductor devices such as IC and LSI, transfer molding of epoxy resin composition is suitable for low cost and mass production, and has been adopted for a long time, and the characteristics are improved by improvement of epoxy resin or phenol resin which is a curing agent in terms of reliability. This has been planned. However, in recent years, the market trend of miniaturization, light weight, and high performance of electronic devices has been progressed year by year, and the integration of semiconductors has been progressing year by year, and the surface mounting of semiconductor devices has been promoted, and the demand for epoxy resin compositions for semiconductor sealing is even more difficult. ought. For this reason, the problem which cannot be solved with the conventional epoxy resin composition is also shown.
종래, 주로 에폭시 수지 조성물로 밀봉된 반도체 장치는, 그 조성에 착색제로서 카본 블랙을 포함하고 있다. 이것은 반도체 소자를 차폐(遮蔽)하기 위함과 반도체 장치에 품명이나 로트번호 등을 마킹 할 때, 배경이 흑색이면 보다 선명한 인자를 얻을 수 있기 때문이다. 또 최근에는 취급이 용이한, 레이저 마킹을 채용하는 전자 부품 메이커가 증가하고 있기 때문이다. 레이저 마킹성을 향상시키는 방법에 관해서는, 일본국 특허공개평2-127449호 공보에, 카본 함유량이 99.5 중량% 이상, 수소 함유량이 0.3중량% 이하인 카본 블랙이 같은 목적에 효과적인 것이 개시되어 있고, 또, 그 외의 여러 가지 연구도 이루어지고 있다. 또한, 특허 제110-1997-0009016호에 카본 블랙을 안료로서 사용하는 에폭시 수지 조성물이 게시되어 있다.Conventionally, the semiconductor device mainly sealed by the epoxy resin composition contains carbon black as a coloring agent in the composition. This is because a clearer factor can be obtained if the background is black when shielding the semiconductor element and when marking the product name, lot number, etc. on the semiconductor device. In recent years, an increasing number of electronic component manufacturers employing laser marking, which is easy to handle, are increasing. As for the method of improving the laser marking property, Japanese Patent Laid-Open No. 2-127449 discloses that carbon black having a carbon content of 99.5% by weight or more and a hydrogen content of 0.3% by weight or less is effective for the same purpose. In addition, various other studies have been made. In addition, Patent No. 110-1997-0009016 discloses an epoxy resin composition using carbon black as a pigment.
본 발명은 반도체칩 몰딩용 수지 조성물로서, 좀더 구체적으로 착색제로서 이산화티타늄(TiO2, 또는 타이탄 블랙)을 사용하여 착색제(또는 안료)로서 카본블랙(Carbon Black)을 사용하였을 때보다 마킹 선명도가 개선되고 와이어 탑 마진(도 1의 'M') 확보가 가능하여 박형의 패키지, 특히, 큐, 에프, 엔(QFN : Quad Flad No-lead)에서 장점을 발휘할 수 있는 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물을 제공하기 위함이다.The present invention is a resin composition for semiconductor chip molding, and more specifically, using a titanium dioxide (TiO 2, or titanium black) as a colorant, the marking clarity is improved compared to when carbon black (Carbon Black) is used as a colorant (or pigment). Epoxy resin encapsulation material with excellent marking clarity that can secure wire top margin ('M' in FIG. 1) and can show advantages in thin packages, especially QFN (Quad Flad No-lead). To provide a composition.
이러한 본 발명의 목적을 달성하기 위한 본 발명에 따른 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물은,The epoxy resin encapsulant composition excellent in marking clarity according to the present invention for achieving the object of the present invention,
반도체 패키지 제조용 에폭시 수지 봉지재 조성물에 있어서, In the epoxy resin sealing material composition for manufacturing a semiconductor package,
용융실리카 (SiO2)와, 에폭시수지와, 경화제와, 커플링제 또는 이형제 중에서 선택된 1종 이상의 첨가제와, 착색제를 포함하여 구성되되,It comprises a molten silica (SiO 2 ), an epoxy resin, a curing agent, at least one additive selected from a coupling agent or a release agent, and a colorant,
상기 착색제는 이산화티타늄(TiO2)인 것이 특징이다.The colorant is characterized in that the titanium dioxide (TiO 2 ).
본 발명에 따른 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물에 있어서,In the epoxy resin encapsulant composition excellent in marking clarity according to the present invention,
상기 용융실리카(SiO2)는 75 ~ 90중량%, 상기 에폭시수지는 5 ~ 15중량%, The molten silica (SiO 2 ) is 75 to 90% by weight, the epoxy resin is 5 to 15% by weight,
상기 경화제는 3 ~ 10중량%, 상기 커플링제 또는 이형제 중에서 선택된 1종 이상의 첨가제는 0.3 ~ 1중량%, 상기 착색제는 0.3 ~ 0.5중량%를 포함하여 구성되는 것이 바람직하다.The curing agent is 3 to 10% by weight, at least one additive selected from the coupling agent or the release agent is 0.3 to 1% by weight, it is preferable that the colorant comprises 0.3 to 0.5% by weight.
본 발명의 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물이 적용된 반도체 패키지는 EMC 상부 레이져 마킹 깊이가 25~30μm인 큐, 에프, 엔(QFN : Quad Flad No-lead) 반도체 패키지인 것이 바람직하다.The semiconductor package to which the epoxy resin encapsulant composition excellent in marking clarity of the present invention is applied is preferably a Q, F, and Quad Flad No-lead (QFN) semiconductor package having an EMC upper laser marking depth of 25 to 30 μm.
본 발명에 따르는 경우 종래 기술의 문제점이 해결되며, 착색제로서 이산화티타늄((TiO2)을 사용하여 착색제(또는 안료)로서 카본블랙(Carbon Black)을 사용하였을 때보다 마킹 선명도가 개선되고 와이어 탑 마진 확보가 가능하여 박형의 패키지, 특히, 큐, 에프, 엔(QFN : Quad Flad No-lead)에서 장점을 발휘할 수 있는 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물이 제공된다.According to the present invention, the problems of the prior art are solved, and the marking clarity is improved and the wire top margin is higher than when carbon dioxide is used as the colorant (or pigment) using titanium dioxide ((TiO 2 ) as the colorant. The present invention provides an epoxy resin encapsulant composition having excellent marking clarity that can be secured and exhibits advantages in thin packages, particularly, QFN (Quad Flad No-lead).
그리고, 기존 Laser Marking Depth 나 Width 보다, Depth 가 낮고 Width 가 작아도 더 선명하여 Thin PKG 에 유리한 장점이 있다.And, even though Depth is lower and Width is smaller than existing Laser Marking Depth or Width, it is more advantageous for Thin PKG.
이하 본 발명에 의한 마킹 선명도가 우수한 에폭시 수지 봉지재 조성물에 대하여 상세히 설명한다. 도 1은 반도체 패키지 구조 단면도이다.Hereinafter, an epoxy resin encapsulant composition excellent in marking clarity according to the present invention will be described in detail. 1 is a cross-sectional view of a semiconductor package structure.
본 발명의 반도체 패키지 제조용 에폭시 수지 봉지재 조성물은 용융실리카 (SiO2)와, 에폭시수지와, 경화제와, 커플링제 또는 이형제 중에서 선택된 1종 이상의 첨가제와, 착색제를 포함하여 구성되며 착색제는 이산화티타늄(TiO2, 타이탄 블랙[Titan Black])이다.The epoxy resin encapsulant composition for manufacturing a semiconductor package of the present invention comprises molten silica (SiO 2 ), an epoxy resin, a curing agent, at least one additive selected from a coupling agent or a release agent, and a colorant. TiO 2, Titan Black).
본 발명의 반도체 패키지 제조용 에폭시 수지 봉지재 조성물에 있어서, 용융실리카(SiO2)는 75 ~ 90중량%, 에폭시수지는 5 ~ 15중량%, 경화제는 3 ~ 10중량%, 커플링제 또는 이형제 중에서 선택된 1종 이상의 첨가제는 0.3 ~ 1중량%, 착색제는 0.3 ~ 0.5중량%가 함유됨이 바람직하다.In the epoxy resin encapsulant composition for manufacturing a semiconductor package of the present invention, the molten silica (SiO 2 ) is 75 to 90% by weight, the epoxy resin is 5 to 15% by weight, the curing agent is selected from 3 to 10% by weight, coupling agent or release agent It is preferable that one or more additives contain 0.3 to 1% by weight, and the colorant contains 0.3 to 0.5% by weight.
용융실리카(SiO2), 에폭시수지, 경화제, 첨가제 등의 중량비는 공지된 사항이며 본 발명의 출원일 전의 공지기술에 게시된 중량비에 관한 자료는 본 발명의 명세서에 게시된 것으로 본다. The weight ratio of molten silica (SiO 2 ), epoxy resins, curing agents, additives and the like are known matters, and the data on the weight ratios disclosed in the prior art prior to the filing date of the present invention are considered to be published in the specification of the present invention.
본 발명에 있어서 이산화티타늄(TiO2, 또는 Titanium Oxide Black)이라고 도 일컬음) 착색제는 0.3 ~ 0.5중량%가 함유됨이 바람직하다. 0.3중량% 미만 함유되는 경우 그 양이 적어서 안료로서의 기능을 할 수 없거나 착색 효과가 너무 약하며, 0.5중량% 이상 함유되는 경우 중량비 증가에 비해 착색 효과의 증가가 크게 나타나지 않으며 0.5중량% 수준에서 충분한 착색 효과와 선명도 개선의 효과를 누릴 수 있다. In the present invention, titanium dioxide (also referred to as TiO 2 or Titanium Oxide Black) colorant is preferably contained 0.3 to 0.5% by weight. If it is contained less than 0.3% by weight, the amount thereof is too small to function as a pigment or the coloring effect is too weak.When it is contained more than 0.5% by weight, the increase in the coloring effect is not large compared to the increase in the weight ratio, and sufficient coloring at the level of 0.5% by weight is sufficient. You can enjoy the effect of improving the effect and sharpness.
본 발명에 있어서, 이산화티타늄은 Titanium Oxide Black으로 대체될 수 있으며, Titanium Oxide Black 또는 이산화티타늄은 TiO, TiO2, Ti2O3, Ti3O, Ti2O, TinO2n-1(n = 3 ~ 9)로 대체될 수 있다.In the present invention, titanium dioxide may be replaced with Titanium Oxide Black, and Titanium Oxide Black or Titanium Dioxide is TiO, TiO 2 , Ti 2 O 3 , Ti 3 O, Ti 2 O, Ti n O 2n-1 (n = 3 to 9).
용융실리카는 SiO2 단일성분으로 구성되어 있으며 분자량 60.08이며 백색투명 또는 불투명한 비정질 망목구조를 가지고 있으며, 공업재료중에서 열팽창계수가 가장 작다. 연화점(軟化點) : 1,650℃, 비중(比重) : 2.21, 결정구조(結晶構造) : 비정질, 열팽창(熱膨脹)계수(係數) : 0.5×10(-6)(1000℃)이고, 수정(Quartz), 석영유리(Quartz glass), 합성석영(Synthetic Quartz), 실리카(Silica) 이산화규소(Silicon dioxide), 실리카유리(Silica glass)로 불리기도 한다.Molten silica is composed of a single SiO 2 component and has a molecular weight of 60.08, a white or opaque amorphous network structure, and the smallest thermal expansion coefficient among industrial materials. Softening point: 1,650 ℃, Specific gravity: 2.21, Crystal structure: Amorphous, Thermal expansion coefficient: 0.5 × 10 (-6) (1000 ℃), quartz ), Quartz glass, synthetic quartz, silica, silicon dioxide, and silica glass.
용융실리카는 열팽창계수가 극히 작고, 내열스포링성이 현저하게 우수하며, 통기성이 적고, 열전도율이 적고, 화학적으로 안정하다. 이러한 특성 때문에, 이 천연계 실리카 유리는 내화재료로서 철강관계의 연주설비의 침적노즐, 출선통(出銑桶), 고온성형재료, 정밀주조용 스탁크재료, 충진재료, 프라스마 용사재료, 소결체재료, 노심관등에 사용된다. Molten silica has an extremely low coefficient of thermal expansion, remarkably excellent heat resistance, low air permeability, low thermal conductivity, and chemical stability. Due to these characteristics, this natural silica glass is a refractory material, which is a deposition nozzle, a casting barrel, a high temperature molding material, a precision casting stock material, a filling material, a plasma spray material, and a sintered material as a fireproof material. It is used for the core and the core.
또한, 화학적으로는 안정해서 전기적으로도 우수한 절연재료이며, 고주파 유도체손실도 적으므로 반도체 봉지재에 사용되고 있다. 반도체봉지재는 용융실리카 70-80%, 에폭시수지 15-25%, 경화제 및 기타의 성분 5%의 조성으로 만들어진다. 봉 제재중에 충진재료의 충진율을 높이기 위해서 구상품의 수요가 늘어나고 있다. In addition, it is chemically stable and electrically excellent in insulating material, and has high frequency inductor loss, so it is used in semiconductor encapsulants. The semiconductor encapsulant is made of 70-80% molten silica, 15-25% epoxy resin, 5% hardener and other components. In order to increase the filling rate of filling materials in sewing materials, demand for old products is increasing.
에폭시수지는 바이페닐 에폭시 수지, 노볼락 에폭시수지, 디사이클로펜타디에닐 에폭시 수지, 비스페놀 에폭시 수지, 테르펜 에폭시 수지, 아랄킬 에폭시 수지, 다기능성 에폭시 수지, 나프탈렌 에폭시 수지 및 할로겐화 에폭시 수지로 구성된 군에서 선택된 1종 이상의 화합물일 수 있다. 에폭시수지는 EMC용으로 사용되는 공지의 에폭시 수지일 수 있다.Epoxy resins are selected from the group consisting of biphenyl epoxy resins, novolac epoxy resins, dicyclopentadienyl epoxy resins, bisphenol epoxy resins, terpene epoxy resins, aralkyl epoxy resins, multifunctional epoxy resins, naphthalene epoxy resins and halogenated epoxy resins. It may be one or more compounds selected. The epoxy resin may be a known epoxy resin used for EMC.
경화제는 페놀릭 노볼락 수지, 크레졸 노보락 수지, 다기능성 페놀릭 수지, 아랄킬 페놀릭 수지, 테르펜 페놀릭 수지, 디사이클로펜타디에닐 페놀릭 수지, 나프탈렌 페놀릭 수지 및 할로겐화 페놀릭 수지로 구성된 군에서 선택된 1종 이상의 화합물일 수 있다. 경화제는 EMC용으로 사용되는 공지의 경화제 일 수 있다.Curing agent consists of phenolic novolak resin, cresol novolak resin, multifunctional phenolic resin, aralkyl phenolic resin, terpene phenolic resin, dicyclopentadienyl phenolic resin, naphthalene phenolic resin and halogenated phenolic resin It may be one or more compounds selected from the group. The curing agent may be a known curing agent used for EMC.
커플링제, 이형제의 경우, 공지된 EMC용 커플링제, 이형제가 사용될 수 있다. In the case of a coupling agent, a release agent, a well-known coupling agent and release agent for EMC can be used.
<실시예 1, 비교예 1><Example 1, Comparative Example 1>
본 발명에 따른 <실시예 1>의 EMC는 용융실리카(SiO2) 82중량%, 에폭시수지 10중량%, 경화제 6.5중량%, 커플링제 및 이형제 1중량%, 이산화티타늄으로 구성된 착색제는 0.5중량%로 구성하였다. 몰딩 작업 완료 후 레이져 마킹 깊이(도 1 참조)25μm로 하였다.EMC of <Example 1> according to the present invention is 82% by weight molten silica (SiO 2 ), 10% by weight epoxy resin, 6.5% by weight curing agent, 1% by weight coupling agent and release agent, 0.5% by weight of a colorant composed of titanium dioxide It consisted of. After completion of the molding operation, the laser marking depth was 25 μm (see FIG. 1).
<비교예 1>의 경우, 나머지 구성을 같게 하고 카본블랙을 착색제로 사용하였다. 몰딩 작업 완료 후 레이져 마킹 깊이는 종래 기술과 같이 50μm로 하였다.For <Comparative Example 1>, the rest of the configuration was the same and carbon black was used as the colorant. After completion of the molding operation, the laser marking depth was 50 m as in the prior art.
양자를 비교할 때, 동일한 수준의 패키지에서 요구되는 선명도를 얻기 위해,착색제로 카본블랙을 사용한 <비교예 1>의 경우 레지져 마킹을 위해 50μm의 마킹 깊이(D)가 필요한 반면, 본 발명에 따라서 이산화티타늄제 착색제를 사용한 경우 마킹 깊이(D) 25~30μm 수준에서 <비교예 1>과 같은 선명도를 얻을 수 있었다.When comparing the two, in order to obtain the required clarity in the package of the same level, in Comparative Example 1 using carbon black as a colorant, a marking depth (D) of 50 μm is required for the laser marking, In the case of using a titanium dioxide colorant, the same sharpness as in <Comparative Example 1> was obtained at a marking depth (D) of 25 to 30 μm.
한편, 최근들어 개인용 컴퓨터, 셀룰러 폰, 캠코더와 같은 전자제품군은 제품의 크기는 소형화를 추구하면서, 내부에서 수행하는 처리용량은 대용량화를 추구하고 있다. 이에 따라 반도체 패키지에 있어서도, 크기는 작으면서 대용량이고, 빠른 처리속도에도 적합한 형태의 반도체 패키지가 절실히 요구된다. 이에 따라, 반도체 패키지의 개발 방향은, 종래의 DIP(Dual In-Line) 패키지와 같은 삽입실장형에서, 표면실장형인 QFN(Quad Flat Non-lead), TSOP(Thin Small Out-line Package), TQFP(Thin Quad Flat Package), BGA(Ball Grid Array)로 급속히 전환되고 있다. 상기 표면실장형 패키지중 QFN 패키지는 일반적인 반도체 패키지와 같이 리드프레임을 사용하면서도 반도체 패키지의 크기와 무게를 현저하게 줄일 수 있으며 또한 높은 품질과 신뢰도를 얻을 수 있기 때문에 주목을 받고 있는 반도체 패키지이다.On the other hand, electronic product groups such as personal computers, cellular phones, and camcorders have recently been pursuing miniaturization of the size of the product, while pursuing the internal processing capacity. Accordingly, also in the semiconductor package, there is an urgent need for a semiconductor package having a small size, a large capacity, and a type suitable for a high processing speed. Accordingly, the development direction of the semiconductor package is a surface mount type quad flat non-lead (QFN), thin small out-line package (TSOP), or TQFP in an insert-mount type such as a conventional dual in-line (DIP) package. (Thin Quad Flat Package) and BGA (Ball Grid Array) are rapidly changing. Among the surface mount packages, the QFN package is a semiconductor package that is attracting attention because it can significantly reduce the size and weight of the semiconductor package and obtain high quality and reliability while using a lead frame like a general semiconductor package.
본 발명에 따른 경우 착색제로서 이산화티타늄(TiO2)을 사용하여 착색제(또는 안료)로서 카본블랙(Carbon Black)을 사용하였을 때보다 마킹 선명도가 개선되고 와이어 탑 마진 확보가 가능하여, 본 발명은 박형의 패키지, 특히, 상기와 같은 큐, 에프, 엔(QFN : Quad Flad No-lead)에서 장점을 발휘할 수 있다. According to the present invention, the marking clarity is improved and the wire top margin can be secured compared to when titanium dioxide (TiO 2 ) is used as the colorant, and carbon black (Carbon Black) is used as the colorant (or pigment). In particular, it can be used in the above-mentioned queues, F, and N (QFN: Quad Flad No-lead).
본 발명은 상기에서 언급한 바람직한 실시예와 관련하여 설명됐지만, 본 발명의 범위가 이러한 실시예에 한정되는 것은 아니며, 본 발명의 범위는 이하의 특허청구범위에 의하여 정하여지는 것으로 본 발명과 균등 범위에 속하는 다양한 수정 및 변형을 포함할 것이다.Although the present invention has been described in connection with the above-mentioned preferred embodiments, the scope of the present invention is not limited to these embodiments, and the scope of the present invention is defined by the following claims, and equivalent scope of the present invention. It will include various modifications and variations belonging to.
아래의 특허청구범위에 기재된 도면부호는 단순히 발명의 이해를 보조하기 위한 것으로 권리범위의 해석에 영향을 미치지 아니함을 밝히며 기재된 도면부호에 의해 권리범위가 좁게 해석되어서는 안될 것이다.The reference numerals set forth in the claims below are merely to aid the understanding of the present invention, not to affect the interpretation of the scope of the claims, and the scope of the claims should not be construed narrowly.
도 1은 반도체 패키지 구조 단면도.1 is a cross-sectional view of a semiconductor package structure.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180043986A (en) | 2016-10-21 | 2018-05-02 | 주식회사 케이씨씨 | Epoxy Resin Composition for Sealing Semiconductor |
| CN117264374A (en) * | 2023-11-23 | 2023-12-22 | 天津德高化成新材料股份有限公司 | White plastic package material for high-current ceramic substrate package and preparation method and application thereof |
-
2009
- 2009-08-24 KR KR1020090077970A patent/KR20110020382A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180043986A (en) | 2016-10-21 | 2018-05-02 | 주식회사 케이씨씨 | Epoxy Resin Composition for Sealing Semiconductor |
| CN117264374A (en) * | 2023-11-23 | 2023-12-22 | 天津德高化成新材料股份有限公司 | White plastic package material for high-current ceramic substrate package and preparation method and application thereof |
| CN117264374B (en) * | 2023-11-23 | 2024-02-20 | 天津德高化成新材料股份有限公司 | White plastic package material for high-current ceramic substrate package and preparation method and application thereof |
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