KR20110001531A - Semiconductor device in anti fuse, method for repair and method for fabircating the same - Google Patents

Semiconductor device in anti fuse, method for repair and method for fabircating the same Download PDF

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KR20110001531A
KR20110001531A KR1020090059097A KR20090059097A KR20110001531A KR 20110001531 A KR20110001531 A KR 20110001531A KR 1020090059097 A KR1020090059097 A KR 1020090059097A KR 20090059097 A KR20090059097 A KR 20090059097A KR 20110001531 A KR20110001531 A KR 20110001531A
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conductive patterns
fuse
insulating layer
semiconductor device
film
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Korean (ko)
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KR101043741B1 (en
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우탁균
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract

PURPOSE: An anti-fuse, a repairing method, and a manufacturing method thereof are provided to fundamentally prevent fuse repair defect due to metal migration, which is generated after a repair process by using a metal migration property. CONSTITUTION: A first and a second conductive pattern(22A, 22B) are located on the same line in a substrate(21). The first and the second conductive pattern are spaced apart at a uniform interval. A first insulating layer(23) covers the first and the second conductive pattern and includes a fuse box(25) which exposes both ends of the first and the second conductive pattern. A second insulating layer covers the first and the second conductive pattern that are exposed by the fuse box.

Description

Antifuse, repair method and manufacturing method of semiconductor device {SEMICONDUCTOR DEVICE IN ANTI FUSE, METHOD FOR REPAIR AND METHOD FOR FABIRCATING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing technology of a semiconductor device, and more particularly, to an anti-fuse, a repair method, and a manufacturing method of a semiconductor device using a migration characteristic of a metal.

If any one of a number of cells in a semiconductor memory device fails, it cannot be functioned as a memory and thus is treated as a defective product. However, in spite of a defect occurring only in some cells in the semiconductor memory device, the disposal of the entire semiconductor memory device as a defective product is an inefficient processing method in terms of yield. Therefore, at present, the yield is improved by reviving the entire semiconductor memory device through a repair process in which a defective cell is replaced by using a redundancy cell provided in the semiconductor memory device.

Typically, the fuse is formed by extending a portion of the metal wiring to the fuse unit in the process of forming the metal wiring without forming through a separate process. Recently, fuses are also formed of copper wires as metal wires are formed by using copper (Cu), which has a lower specific resistance than conventional aluminum (Al) or tungsten (W), which can increase signal transmission speed.

1A and 1B show a copper fuse according to the prior art, FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along the line XX ′ of FIG. 1A.

1A and 1B, a plurality of copper fuses 12 are disposed on a substrate 11 having a predetermined structure, and an insulating film covering the copper fuses 12 on the copper fuses 12. 13 is formed, and the insulating film 13 includes a fuse box 14 which partially exposes the copper fuse 12.

Conventionally, after forming a fuse having the above-described structure, a fuse blowing method of cutting the copper fuse 12 by irradiating a laser on the copper fuse 12 exposed through the fuse box 14. Perform a repair using.

However, in the prior art, after the repair process, the copper fuse 12 cut as shown by reference numeral 'A' is electrically due to migration due to migration characteristics such as electromigration (EM) or stress migration (SM) of copper after the repair process. There is a problem with the connection.

The present invention has been proposed to solve the above problems of the prior art, the anti-fuse of the semiconductor device that can prevent the fuse repair failure due to migration in the semiconductor device using a metal having a migration characteristic such as copper as a fuse, An object of the present invention is to provide a repair method and a method of manufacturing the same.

Antifuse of the present invention according to an aspect for achieving the above object, the first and second conductive patterns which are located on the same line on the substrate, spaced apart by a predetermined interval; A first insulating layer covering the first and second conductive patterns and having a fuse box exposing both ends of the first and second conductive patterns facing each other; And a second insulating layer covering the first and second conductive patterns exposed by the fuse box.

The first and second conductive patterns may include metal layers having migration characteristics. Specifically, the first and second conductive patterns may include a copper film.

The thickness of the second insulating layer may be smaller than the thickness of the first insulating layer, and the second insulating layer may include an oxide layer.

According to another aspect of the present invention, a repair method of the present invention includes: covering the first and second conductive patterns and the first and second conductive patterns spaced apart by a predetermined distance from each other on a same line on a substrate, and facing each other; In the anti-fuse comprising a first insulating film having a fuse box for exposing both ends of the first and second conductive patterns and a second insulating film covering the first and second conductive patterns exposed by the fuse box Irradiating a laser on the first and second conductive patterns exposed by the fuse box to remove the second insulating layer on the exposed first and second conductive patterns; And causing migration of the first and second conductive patterns from which the second insulating layer has been removed to electrically connect the first and second conductive patterns.

The electrically connecting the first and second conductive patterns may be performed by forming an electric field between the first and second conductive patterns. Specifically, a positive voltage may be applied to any one of the first and second conductive patterns, and ground or a negative voltage may be applied to any one of the first and second conductive patterns. In this case, the migration may be EM (Electro Migration).

The first and second conductive patterns may include metal layers having migration characteristics. Specifically, the first and second conductive patterns may include a copper film.

The thickness of the second insulating layer may be smaller than the thickness of the first insulating layer, and the second insulating layer may include an oxide layer.

According to another aspect of the present invention, there is provided a method for manufacturing an anti-fuse, including: forming first and second conductive patterns on the same line and spaced apart from each other by a predetermined interval; Forming an insulating layer on the substrate to cover the first and second conductive patterns; And selectively etching the insulating layer to expose both ends of the first and second conductive patterns facing each other, and to form a fuse box such that the insulating layer remains on the exposed surface of the first and second conductive patterns by a predetermined thickness. Steps.

The forming of the fuse box may include forming a first open region such that the insulating film having a predetermined thickness remains on sidewalls of the first and second conductive patterns facing each other by selectively primary etching the insulating film; And selectively etching the insulating layer to expose both ends of the first and second conductive patterns facing each other, so that the insulating layer having a predetermined thickness remains on the exposed upper surfaces of the first and second conductive patterns. And forming a second open region.

The first and second conductive patterns may include metal layers having migration characteristics. Specifically, the first and second conductive patterns may include a copper film.

The insulating film may include an oxide film.

According to another aspect of the present invention, there is provided a method for manufacturing an anti-fuse, including: forming first and second conductive patterns on the same line and spaced apart from each other by a predetermined interval; Forming a first insulating layer on the substrate to cover the first and second conductive patterns; Selectively etching the first insulating layer to form a fuse box exposing both ends of the first and second conductive patterns facing each other; And forming a second insulating layer on the entire surface of the structure including the fuse box.

The first and second conductive patterns may include metal layers having migration characteristics. Specifically, the first and second conductive patterns may include a copper film.

The thickness of the second insulating layer may be smaller than the thickness of the first insulating layer, and the second insulating layer may include an oxide layer.

The present invention based on the above-described problem solving means, by providing a method of repairing anti-fuse and anti-fuse using the metal migration characteristics, thereby essentially the fuse repair failure caused by the metal migration occurring after the repair process of the metal fuse There is an effect that can be prevented.

In addition, by having an insulating film (or a second insulating film) covering the surfaces of the first and second conductive patterns exposed by the fuse box, it is possible to prevent the short between the first and second conductive patterns due to metal migration. It has an effect.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, in order to facilitate a person skilled in the art to easily carry out the technical idea of the present invention.

The present invention, which will be described later, uses reverse migration characteristics of a metal to prevent a fuse repair failure due to migration in a semiconductor device having a fuse made of a metal having migration characteristics such as copper (Cu). An anti-fuse, a repair method, and a manufacturing method of a semiconductor device are provided.

FIG. 2A is a plan view illustrating an antifuse of a semiconductor device according to a first embodiment of the present invention, and FIG. 2B is a plan view illustrating an antifuse of a semiconductor device according to a second embodiment of the present invention, and FIG. A cross-sectional view taken along the line X-X 'shown in FIG.

As shown in FIGS. 2A to 2C, the antifuse of the present invention may be disposed on the same line on the substrate 21 having a predetermined structure and may be spaced apart from each other by the first and second conductive patterns 22A, 22B) and a first insulating layer having a fuse box 25 covering the first and second conductive patterns 22A and 22B and exposing both ends of the first and second conductive patterns 22A and 22B facing each other. And a second insulating film 24 covering the first and second conductive patterns 22A and 22B exposed by the 23 and the fuse box 25.

The first and second conductive patterns 22A and 22B act as anti-fuses, and the first and second conductive patterns 22A and 22B may be metal films having migration characteristics, for example, aluminum films, for the repair process using migration characteristics. (Al), tungsten film W, copper film Cu, or the like. At this time, it is most preferable that the first and second conductive patterns 22A and 22B are formed of a copper film Cu having excellent migration characteristics and low signal resistance, and excellent signal transmission characteristics.

In addition, the first and second conductive patterns 22A and 22B have a structure spaced apart from each other by a predetermined interval W1 on the same line. The first and second conductive patterns 22A and 22B are spaced apart from each other by a first space. And a repair process characteristic using a material and migration constituting the second conductive patterns 22A and 22B. In addition, the line width W2 at both ends of the first and second conductive patterns 22A and 22B exposed by the fuse box 25 is the size of the laser applied to remove the second insulating layer 24 during the repair process. Or diameter). Accordingly, the line width W3 of the fuse box 25 may be formed at both ends of the first and second conductive patterns 22A and 22B and the exposed ends of the first and second conductive patterns 22A and 22B. This can be determined by the line width W2.

The fuse box 25 may be a line pattern. The substrate 21 exposed by the second insulating layer 24 in the fuse box 25 may be a line pattern (see FIG. 2A), or may be a hole pattern. Hole pattern, see FIG. 2B).

The first insulating layer 23 including the fuse box 25 and the second insulating layer 24 covering all surfaces of the first and second conductive patterns 22A and 22B exposed by the fuse box 25 may include an oxide film, It can be formed of any one selected from the group consisting of a nitride film, an oxynitride film and a carbon-containing film or a laminated film in which these are laminated. At this time, the second insulating film 24 is preferably formed of a single film made of an oxide film that is easily removed by a laser during the repair process.

Here, the second insulating layer 24 serves to protect the first and second conductive patterns 22A and 22B exposed by the fuse box 25. In particular, the second insulating layer 24 serves to prevent the first and second conductive patterns 22A and 22B, which are not to be repaired, from being connected to each other due to migration.

In addition, the second insulating film 24 may be formed to have a thickness thinner than that of the first insulating film 23. This is because the second insulating film 24 on the first and second conductive patterns 22A and 22B to be repaired should be removed by the laser during the repair process, and the type of laser, the irradiation energy and the second insulating film 24 are constituted. The thickness of the second insulating layer 24 may be adjusted according to the material to be used.

Antifuse of the present invention having the above-described structure by using the migration characteristics during the repair process, it is possible to prevent the fuse repair failure due to migration that occurs after the repair process in the case of using the metal wiring as a fuse. This will be described in more detail with reference to FIGS. 3A and 3B, which illustrate a repair method using an antifuse of a semiconductor device according to a first embodiment of the present invention.

3A and 3B are cross-sectional views illustrating a repair method using an antifuse of a semiconductor device according to a first embodiment of the present invention.

As shown in FIG. 3A, the first and second conductive patterns 22A and 22B of the antifuse to be repaired are exposed. That is, the second insulating layer 24 on the first and second conductive patterns 22A and 22B exposed by the fuse box 25 is removed.

The second insulating layer 24 may be removed by irradiating laser onto the exposed first and second conductive patterns 22A and 22B. This is similar to the conventional fuse blowing (fuseblowing) method by irradiating the laser to the first and second conductive patterns 22A, 22B exposed by the fuse box 25, the first and second conductive patterns 22A, 22B) The second insulating film 24 can be removed by the shock wave generated by the accumulation of charge on the surface. At this time, the second insulating layer 24 is removed by the shock wave, and at the same time, the exposed first and second conductive patterns 22A and 22B may be partially lost. However, the surfaces of the first and second conductive patterns 22A and 22B that are not repaired are repaired due to the first and second conductive patterns 22A and 22B that are lost because the second insulating layer 24 is still covered. This can prevent the failure of anti-fuse.

As shown in FIG. 3B, the first and second conductive patterns 22A and 22B from which the second insulating layer 24 is removed may be migrated to electrically connect the first and second conductive patterns 22A and 22B. (See symbol 'A').

For example, as a method of inducing migration of the first and second conductive patterns 22A and 22B, an electric field is formed between the first and second conductive patterns 22A and 22B to cause EM (Electro Migration). Can be used. Specifically, when a positive voltage is applied to one of the first and second conductive patterns 22A and 22B and a ground voltage or a negative voltage is applied to the other, the first and second conductive patterns 22A and 22B. As the electric field is formed between them by the voltage difference between), EM may be generated to electrically connect the first and second conductive patterns 22A and 22B.

As described above, the present invention provides an antifuse and repair method of a semiconductor device capable of performing a repair process using migration characteristics, thereby preventing the occurrence of a fuse repair failure due to migration after the repair process.

In addition, since the second insulating layer 24 covering the first and second conductive patterns 22A and 22B exposed by the fuse box 25 is provided, defects caused by migration from the anti-fuse which is not a repair target are prevented. It is possible to prevent the occurrence of defects due to by-products generated when the second insulating layer 24 is removed.

4A to 4B are cross-sectional views illustrating a method of manufacturing an antifuse of a semiconductor device according to a third embodiment of the present invention. At this time, the process cross-sectional view is shown along the line X-X 'shown in Figure 2a.

As shown in FIG. 4A, first and second conductive patterns 32A and 32B acting as anti-fuse are formed on a substrate 31 having a predetermined structure. In this case, the first and second conductive patterns 32A and 32B may be formed on the same line and spaced apart from each other by a predetermined interval W1, and the spaced intervals W1 may be formed by the first and second conductive patterns 32A and 32B. ) Can be adjusted in consideration of repair process characteristics using materials and migration.

The first and second conductive patterns 32A and 32B may be formed of the same material, and the first and second conductive patterns 32A and 32B may be formed of a metal film having migration characteristics, for a repair process using migration characteristics. , Aluminum film (Al), tungsten film (W), copper film (Cu), or the like. At this time, it is most preferable that the first and second conductive patterns 32A and 32B are formed of a copper film Cu having excellent migration characteristics and low signal resistance and excellent signal transmission characteristics.

Next, an insulating film 33 is formed on the substrate 31 to cover the first and second conductive patterns 32A and 32B. At this time, the insulating film 33 may be formed of any one selected from the group consisting of an oxide film, a nitride film, an oxynitride film, and a carbon-containing film or a laminated film in which these layers are stacked.

Next, a first photosensitive film pattern 34 having an opening 34A having a line width W4 smaller than the spaced distance W1 between the first and second conductive patterns 32A and 32B is formed on the insulating film 33. After (W1> W4), the substrate 31 between the first and second conductive patterns 32A and 32B facing each other by etching the insulating layer 33 by using the first photoresist pattern 34 as an etch barrier. Is formed to form a first open region 35. In this case, the first open area 35 may be formed in a line pattern (see FIG. 2A) or in a hole pattern (see FIG. 2B).

Here, the first open region 35 using the first photosensitive film pattern 34 having an opening 34A having a line width W4 smaller than the spaced interval W1 of the first and second conductive patterns 32A and 32B. ), An insulating film 33 having a predetermined thickness remains on sidewalls of the first and second conductive patterns 32A and 32B facing each other (see reference numeral 'B'). At this time, the insulating film 33 remaining on the sidewalls of the first and second conductive patterns 32A and 32B serves to prevent a short between unwanted first and second conductive patterns 32A and 32B due to migration. do.

As shown in FIG. 4B, after the first photoresist layer pattern 34 is removed, the line width W5 larger than the interval W1 in which the first and second conductive patterns 32A and 32B are spaced apart from each other on the insulating layer 33. After the second photoresist pattern 36 having the opening 36A is formed (W5> W1), the first photoresist faces the other by etching the insulating film 33 using the second photoresist pattern 36 as an etch barrier. Second open regions 37 exposing both ends of the conductive patterns 32A and 32B are formed. In this case, in order to protect the exposed first and second conductive patterns, the second open region 37 may have an insulating layer 33 having a predetermined thickness on the upper surfaces of the exposed first and second conductive patterns 32A and 32B. (See symbol 'C').

Here, the first and second open regions 35 and 37 serve as the fuse box 38, and the insulating layer remaining on sidewalls of the first and second conductive patterns 32A and 32B due to the first open region 35. (See reference numeral 'B') and the insulating layer 33 remaining on the upper surfaces of the first and second conductive patterns 32A and 32B exposed by the second open region 37 (see reference numeral 'C') This protects the first and second conductive patterns 32A and 32B exposed during the subsequent process and prevents the short between the unwanted first and second conductive patterns 32A and 32B due to the migration. have. At this time, the insulating film 33 remaining on the exposed first and second conductive patterns 32A and 32B is preferably formed of a single film made of an oxide film that is easily removed by the laser during the repair process. The thickness may be adjusted according to the irradiation energy and the material forming the insulating film 33 remaining on the first and second conductive patterns 32A and 32B.

5A through 5B are cross-sectional views illustrating a method of manufacturing an antifuse of a semiconductor device according to a fourth embodiment of the present invention. At this time, the process cross-sectional view is shown along the line X-X 'cut line shown in Figure 2a.

As shown in FIG. 5A, first and second conductive patterns 42A and 42B acting as antifuse are formed on a substrate 41 having a predetermined structure. In this case, the first and second conductive patterns 42A and 42B may be formed on the same line and may be spaced apart from the predetermined interval W1, and the spaced intervals W1 may be spaced apart from the first and second conductive patterns 42A and 42B. ) Can be adjusted in consideration of repair process characteristics using materials and migration.

The first and second conductive patterns 42A and 42B may be formed of the same material, and the first and second conductive patterns 42A and 42B may be formed of a metal film having migration characteristics, for a repair process using migration characteristics. , Aluminum film (Al), tungsten film (W), copper film (Cu), or the like. In this case, it is most preferable that the first and second conductive patterns 42A and 42B are formed of a copper film Cu having excellent migration characteristics and low signal resistance and excellent signal transmission characteristics.

Next, a first insulating layer 43 is formed on the substrate 41 to cover the first and second conductive patterns 42A and 42B. In this case, the first insulating layer 43 may be formed of any one selected from the group consisting of an oxide film, a nitride film, an oxynitride film, and a carbon-containing film or a laminated film in which these layers are stacked.

Next, after the photoresist pattern (not shown) is formed on the first insulating layer 43, the first and second conductive surfaces facing each other by etching the first insulating layer 43 by using the photoresist pattern as an etch barrier. A fuse box 44 exposing both ends of the patterns 42A and 42B is formed. In this case, the fuse box 44 may be a line pattern.

As shown in FIG. 5B, a second insulating layer 45 is formed on the entire surface of the structure including the fuse box 44. At this time, the second insulating layer 45 protects the first and second conductive patterns 42A and 42B exposed during the process and shorts the unwanted first and second conductive patterns 42A and 42B due to migration. Serves to prevent. In addition, the second insulating layer 45 is preferably formed of a single layer made of an oxide film that is easily removed by a laser during the repair process. In addition, the second insulating layer 45 is preferably formed to have a thickness thinner than that of the first insulating layer 43. The second insulating layer 45 may be formed according to the type of the laser, the irradiation energy, and the material constituting the second insulating layer 45. The thickness of the can be adjusted.

Meanwhile, even when the second insulating layer 45 remains on the substrate 41 between the first and second conductive patterns 42A and 42B facing each other as shown by the reference numeral 'D', the repair yield during the repair process using the migration characteristic In this case, the process of removing the second insulating film 45 remaining on the substrate 41 between the first and second conductive patterns 42A and 42B may be further performed in order to further improve the repair yield. It may be.

Although the technical spirit of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will appreciate that various embodiments within the scope of the technical idea of the present invention are possible.

1a and 1b show a copper fuse according to the prior art;

Fig. 2A is a plan view showing an antifuse of a semiconductor device according to the first embodiment of the present invention.

2B is a plan view illustrating an antifuse of a semiconductor device according to a second exemplary embodiment of the present invention.

FIG. 2C is a cross-sectional view taken along the line X-X 'of FIG. 2A. FIG.

3A and 3B are cross-sectional views illustrating a repair method using antifuse of a semiconductor device according to a first embodiment of the present invention.

4A and 4B are cross-sectional views illustrating a method of manufacturing an antifuse of a semiconductor device according to a third exemplary embodiment of the present invention.

5A and 5B are cross-sectional views illustrating a method of manufacturing an antifuse of a semiconductor device in accordance with a fourth embodiment of the present invention.

* Description of symbols on the main parts of the drawings *

21: substrate 22A: first conductive pattern

22B: second conductive pattern 23: first insulating film

24: second insulating film 25: fuse box

Claims (23)

First and second conductive patterns positioned on the same line on the substrate and spaced apart from each other by a predetermined interval; A first insulating layer covering the first and second conductive patterns and having a fuse box exposing both ends of the first and second conductive patterns facing each other; And A second insulating layer covering the first and second conductive patterns exposed by the fuse box; Antifuse of the semiconductor device comprising a. The method of claim 1, The first and second conductive patterns may include a metal film having migration characteristics. The method of claim 1, The first and second conductive patterns may include a copper film. The method of claim 1, And the thickness of the second insulating layer is smaller than the thickness of the first insulating layer. The method of claim 1, The second insulating layer is an anti-fuse of the semiconductor device including an oxide film. A fuse box disposed on the same line on the substrate and covering the first and second conductive patterns and the first and second conductive patterns spaced apart from each other by a predetermined interval and exposing both ends of the first and second conductive patterns facing each other; An anti-fuse comprising a first insulating film provided and a second insulating film covering the first and second conductive patterns exposed by the fuse box. Irradiating a laser on the first and second conductive patterns exposed by the fuse box to remove the second insulating layer on the exposed first and second conductive patterns; And Electrically connecting the first and second conductive patterns by causing migration to the first and second conductive patterns from which the second insulating layer has been removed. Anti-fuse repair method of a semiconductor device comprising a. The method of claim 6, The step of electrically connecting the first and second conductive patterns, An anti-fuse repairing method for a semiconductor device, comprising: forming an electric field between the first and second conductive patterns. The method of claim 6, The step of electrically connecting the first and second conductive patterns, The anti-fuse repairing method of a semiconductor device, which is performed by applying a positive voltage to any one of the first and second conductive patterns and applying a ground or negative voltage to one of the first and second conductive patterns. 9. The method according to any one of claims 6 to 8, The migration is an anti-fuse repair method of a semiconductor device is EM (Electro Migration). The method of claim 6, The first and second conductive patterns may include a metal film having a migration characteristic. The method of claim 6, The first and second conductive patterns may include a copper film. The method of claim 6, The thickness of the second insulating film is less than the thickness of the first insulating film anti-fuse repair method for a semiconductor device. The method of claim 6, And the second insulating film includes an oxide film. Forming first and second conductive patterns on the same line and spaced apart from each other by a predetermined distance; Forming an insulating layer on the substrate to cover the first and second conductive patterns; And Selectively etching the insulating layer to expose both ends of the first and second conductive patterns facing each other, and forming a fuse box on the exposed first and second conductive pattern surfaces so that the insulating layer remains a predetermined thickness. Anti-fuse manufacturing method of a semiconductor device comprising a. The method of claim 14, Forming the fuse box, Selectively etching the insulating film to form a first open region such that the insulating film having a predetermined thickness remains on sidewalls of the first and second conductive patterns facing each other; And Selectively etching the insulating film to expose both ends of the first and second conductive patterns facing each other, wherein the insulating film having a predetermined thickness remains on the exposed upper surfaces of the first and second conductive patterns; Step 2 to form an open area Anti-fuse manufacturing method of a semiconductor device comprising a. The method of claim 14, The first and second conductive patterns are anti-fuse manufacturing method of a semiconductor device including a metal film having a migration characteristic. The method of claim 14, The first and second conductive patterns may include a copper film. The method of claim 14, And the insulating film comprises an oxide film. Forming first and second conductive patterns on the same line and spaced apart from each other by a predetermined distance; Forming a first insulating layer on the substrate to cover the first and second conductive patterns; Selectively etching the first insulating layer to form a fuse box exposing both ends of the first and second conductive patterns facing each other; And Forming a second insulating film on the entire surface of the structure including the fuse box; Anti-fuse manufacturing method of a semiconductor device comprising a. The method of claim 19, The first and second conductive patterns are anti-fuse manufacturing method of a semiconductor device including a metal film having a migration characteristic. The method of claim 19, The first and second conductive patterns may include a copper film. The method of claim 19, The thickness of the second insulating film is less than the thickness of the first insulating film manufacturing method of the anti-fuse of the semiconductor device. The method of claim 19, The second insulating film is an anti-fuse manufacturing method of a semiconductor device comprising an oxide film.
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