KR20100098700A - 편광 복사를 방출하는 반도체 소자 - Google Patents

편광 복사를 방출하는 반도체 소자 Download PDF

Info

Publication number
KR20100098700A
KR20100098700A KR1020107015622A KR20107015622A KR20100098700A KR 20100098700 A KR20100098700 A KR 20100098700A KR 1020107015622 A KR1020107015622 A KR 1020107015622A KR 20107015622 A KR20107015622 A KR 20107015622A KR 20100098700 A KR20100098700 A KR 20100098700A
Authority
KR
South Korea
Prior art keywords
chip
radiation
filter
semiconductor
polarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107015622A
Other languages
English (en)
Korean (ko)
Inventor
랄프 워스
줄리어스 무스차웩
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20100098700A publication Critical patent/KR20100098700A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/882Scattering means

Landscapes

  • Polarising Elements (AREA)
  • Led Device Packages (AREA)
KR1020107015622A 2007-12-14 2008-12-12 편광 복사를 방출하는 반도체 소자 Withdrawn KR20100098700A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007060202A DE102007060202A1 (de) 2007-12-14 2007-12-14 Polarisierte Strahlung emittierendes Halbleiterbauelement
DE102007060202.4 2007-12-14

Publications (1)

Publication Number Publication Date
KR20100098700A true KR20100098700A (ko) 2010-09-08

Family

ID=40689455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107015622A Withdrawn KR20100098700A (ko) 2007-12-14 2008-12-12 편광 복사를 방출하는 반도체 소자

Country Status (8)

Country Link
US (1) US20100295076A1 (enExample)
EP (1) EP2232593A2 (enExample)
JP (1) JP2011507240A (enExample)
KR (1) KR20100098700A (enExample)
CN (1) CN101897044B (enExample)
DE (1) DE102007060202A1 (enExample)
TW (1) TW200937686A (enExample)
WO (1) WO2009076939A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506313B2 (ja) * 2009-09-30 2014-05-28 スタンレー電気株式会社 車両ヘッドライト用発光ダイオード光源
KR101667815B1 (ko) * 2010-02-18 2016-10-19 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
CN103222078A (zh) * 2011-11-22 2013-07-24 松下电器产业株式会社 半导体发光器件
DE102012107829B4 (de) 2012-08-24 2024-01-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2014183192A (ja) * 2013-03-19 2014-09-29 Polatechno Co Ltd 偏光led及びそれを用いた表示装置
JP7392653B2 (ja) * 2018-10-15 2023-12-06 ソニーグループ株式会社 発光デバイスおよび画像表示装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882774A (en) * 1993-12-21 1999-03-16 Minnesota Mining And Manufacturing Company Optical film
JP3991764B2 (ja) * 2002-05-10 2007-10-17 セイコーエプソン株式会社 照明装置および投射型表示装置
JP4397394B2 (ja) * 2003-01-24 2010-01-13 ディジタル・オプティクス・インターナショナル・コーポレイション 高密度照明システム
US7091653B2 (en) * 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US7278353B2 (en) * 2003-05-27 2007-10-09 Surface Treatment Technologies, Inc. Reactive shaped charges and thermal spray methods of making same
CN1813216A (zh) * 2003-06-24 2006-08-02 皇家飞利浦电子股份有限公司 用于使例如投影显示器的光学系统中的反射光再循环的方法和设备
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US7304418B2 (en) * 2003-10-24 2007-12-04 Seiko Epson Corporation Light source apparatus with light-emitting chip which generates light and heat
US7411222B2 (en) * 2003-11-14 2008-08-12 Harison Toshiba Lighting Corporation Package for light emitting element and manufacturing method thereof
US7408201B2 (en) * 2004-03-19 2008-08-05 Philips Lumileds Lighting Company, Llc Polarized semiconductor light emitting device
JP2006064859A (ja) * 2004-08-25 2006-03-09 Sony Corp 発光装置、液晶投影装置
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
US20070284567A1 (en) * 2004-09-10 2007-12-13 Luminus Devices, Inc Polarization recycling devices and methods
US20060091412A1 (en) * 2004-10-29 2006-05-04 Wheatley John A Polarized LED
JP2006145884A (ja) * 2004-11-19 2006-06-08 Sony Corp 反射型偏光子及びカラー液晶表示装置
TWI261378B (en) * 2005-09-19 2006-09-01 Ind Tech Res Inst Polarized light emitting device
KR100719072B1 (ko) * 2005-10-28 2007-05-16 (주) 아모센스 엘이디 패키지의 세라믹의 경사면 형성 방법
US7943946B2 (en) * 2005-11-21 2011-05-17 Sharp Kabushiki Kaisha Light emitting device
WO2008027692A2 (en) * 2006-08-02 2008-03-06 Abu-Ageel Nayef M Led-based illumination system
US8651685B2 (en) * 2007-03-16 2014-02-18 Cree, Inc. Apparatus and methods for backlight unit with vertical interior reflectors

Also Published As

Publication number Publication date
TW200937686A (en) 2009-09-01
WO2009076939A2 (de) 2009-06-25
EP2232593A2 (de) 2010-09-29
CN101897044B (zh) 2013-03-27
CN101897044A (zh) 2010-11-24
DE102007060202A1 (de) 2009-06-25
WO2009076939A3 (de) 2010-01-07
US20100295076A1 (en) 2010-11-25
JP2011507240A (ja) 2011-03-03

Similar Documents

Publication Publication Date Title
US8575633B2 (en) Light emitting diode with improved light extraction
US6015719A (en) Transparent substrate light emitting diodes with directed light output
KR101647150B1 (ko) 각도 필터 부재를 포함한 발광 다이오드칩
US5793062A (en) Transparent substrate light emitting diodes with directed light output
US9893253B2 (en) LED with scattering features in substrate
US7808011B2 (en) Semiconductor light emitting devices including in-plane light emitting layers
US7863634B2 (en) LED device with re-emitting semiconductor construction and reflector
KR20100098700A (ko) 편광 복사를 방출하는 반도체 소자
US20040061120A1 (en) Light emitting device and manufacturing method thereof
JP2009510744A (ja) 放射放出オプトエレクトロニクス素子
US11081626B2 (en) Light emitting diode packages
CN101523622B (zh) 光电子器件
JP2008305971A (ja) 発光素子
JP2010505245A (ja) Led半導体ボディおよびled半導体ボディの使用法
JP2008515177A (ja) オプトエレクトロニクス薄膜チップ
KR20090018627A (ko) 재발광 반도체 구성 및 반사기를 갖는 led 소자
JP2011077496A (ja) 発光素子および発光素子の製造方法
US20090159916A1 (en) Light source with reflective pattern structure
US20230197766A1 (en) Ultra-smooth sidewall pixelated array leds
US20230120890A1 (en) Integration of secondary optics into chip covers for improved optical emission of high intensity light-emitting diodes
US20070096120A1 (en) Lateral current GaN flip chip LED with shaped transparent substrate
US20230204182A1 (en) Radiation-emitting semiconductor chip, rear light for a motor vehicle, motor vehicle, and optical distance measurement device

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100714

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid