KR20100093356A - Fabricating method of semiconductor device comprising fuse box - Google Patents

Abstract

PURPOSE: A manufacturing method of a semiconductor device equipped with a fuse box is provided to prevent electrostatic defect of the fuse box by protecting an open region of the fuse box through an adhesive layer. CONSTITUTION: Fuse region and bonding pad region are formed in a semiconductor substrate(200). A fuse box including a fuse(210) is formed in the fuse region. A bonding pad is formed in the bonding pad region. An insulating layer(220) equipped with an opening respective exposing the fuse and the bonding pad is formed. A lamination tape for back grind process is attached to the front side of a semiconductor substrate including an insulating layer. The back side of the semiconductor substrate is ground.

Description

Fabrication method of semiconductor device with fuse box {Fabricating method of Semiconductor device comprising fuse box}

The present invention relates to a method for manufacturing a semiconductor device having a fuse box, and more particularly, to a method for manufacturing a semiconductor device for improving an electrostatic defect of a fuse box.

In general, the semiconductor manufacturing process is largely divided into fabrication (hereinafter referred to as "FAB"), electrical die sorting (hereinafter referred to as "EDS"), assembly and test (test).

Among them, the EDS process can inspect the chips in the wafer, sort out the defects and generate the data, and generate the data. Laser repair process to repair chips, post-laser test to select and verify repaired die in the wafer, and back polishing to polish the back side of the wafer using a diamond wheel ( back-grinding) process.

The laser repair process is a process of cutting a fuse connected to a defective memory cell with a laser beam and replacing a redundancy cell embedded in a chip, wherein the fuse has a failure at each bit in the memory cell. When it occurs, it is used to shut down bad memory cells and drive redundancy cells created during chip manufacturing. At this time, the part where the repair is made is called a fuse box.

On the other hand, unintentional static electricity is generated during the semiconductor manufacturing process. For example, the static electricity generated during the individual semiconductor pick-up process and the chip attach process for the chip attach may be generated. Since the static electricity flows into the conductor in the fuse box through the open area of the fuse box, there is a problem that causes a failure of the fuse box.

Therefore, an object of the present invention is to solve the problem of failure caused by static electricity in the fuse box.

The present invention includes preparing a semiconductor substrate having a fuse region and a bonding pad region and having circuit patterns of semiconductor elements formed thereon; Forming a fuse box including a fuse in the fuse region, and forming a bonding pad in the bonding pad region; Forming an insulating film having an opening for exposing the fuse and the bonding pad, respectively; Attaching a lamination tape for a back polishing process to an entire surface of the semiconductor substrate including the insulating layer; And polishing a rear surface of the semiconductor substrate, wherein the lamination tape for the backside film process is formed of a base film layer, a first adhesive layer formed on the base film layer, and a second adhesive layer formed on the first adhesive layer. Provided is a method for manufacturing a semiconductor device having a fuse box, comprising a pressure-sensitive adhesive layer.

In another aspect, the present invention provides a method for manufacturing a semiconductor device having a fuse box, characterized in that the second adhesive layer has a cut portion, the cut portion is formed corresponding to the opening of the insulating film to expose the bonding pad.

The present invention also provides a semiconductor device including a fuse box, wherein the second adhesive layer includes an opening, and the opening of the second adhesive layer corresponds to an opening of the insulating layer exposing the bonding pad. It provides a manufacturing method.

In addition, the present invention provides a method for manufacturing a semiconductor device having a fuse box, characterized in that the first adhesive layer is made of a UV curable pressure-sensitive adhesive.

Also, after the polishing of the back surface of the semiconductor substrate, the fuse further comprises the step of reducing the adhesive force of the first adhesive layer by irradiating UV on the lamination tape attached to the front surface of the semiconductor substrate. A manufacturing method of a semiconductor device having a box is provided.

In addition, according to the present invention, the UV irradiation on the lamination tape is performed by using a mask, and the mask has a light blocking area in an area corresponding to an area corresponding to an opening of the insulating layer exposing the bonding pad of the second adhesive layer. Provided is a method of manufacturing a semiconductor device having a fuse box, which is formed.

The present invention may further include removing the lamination tape attached to the entire surface of the semiconductor substrate after the step of irradiating UV on the lamination tape, and removing the lamination tape may include a base film layer and a first adhesive layer. And a second adhesive layer in a region corresponding to the opening of the insulating film exposing the bonding pads is removed at the same time.

The present invention also provides a method for manufacturing a semiconductor device having a fuse box, wherein the second adhesive layer in a region corresponding to an opening of an insulating film exposing the bonding pad is removed to expose the bonding pad. .

In addition, the present invention is characterized in that the second adhesive layer has an opening, the opening of the second adhesive layer is formed to correspond to the opening of the insulating film that exposes the bonding pads, UV to the lamination tape After the irradiating step, further comprises the step of removing the lamination tape attached to the front surface of the semiconductor substrate, the step of removing the lamination tape, the fuse, characterized in that the substrate film layer and the first adhesive layer is removed at the same time A manufacturing method of a semiconductor device having a box is provided.

The present invention also provides a method of manufacturing a semiconductor device having a fuse box, wherein the bonding pad is exposed through an opening of the second adhesive layer.

In addition, the present invention provides a method of manufacturing a semiconductor device having a fuse box, characterized in that the second adhesive layer is a thermosetting adhesive.

Therefore, the present invention has the effect of forming a second adhesive layer on the semiconductor substrate including the fuse box to protect the open area of the fuse box through the adhesive layer, thereby preventing the static electricity failure of the fuse box.

In addition, the present invention in forming the second adhesive layer on the semiconductor substrate including the fuse box, by exposing the bonding pad in the process of removing the lamination tape, there is an effect that can expose the bonding pad without additional process have.

Embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed contents are thorough and complete, and that the spirit of the present invention can be sufficiently delivered to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. In addition, where a layer is said to be "on" another layer or substrate, it may be formed directly on the other layer or substrate, or a third layer may be interposed therebetween. Portions denoted by like reference numerals denote like elements throughout the specification.

In general, after the circuit patterns of the semiconductor device are formed on the front surface of the semiconductor substrate, a diffusion layer is formed on the rear surface of the semiconductor substrate. The back surface polishing process of the substrate is performed.

In addition, this semiconductor substrate back surface polishing process is also meaningful as a method of reducing the thickness of the semiconductor package according to the trend of miniaturization of semiconductor products.

Subsequently, the semiconductor substrate, which has undergone back polishing, is subjected to a sawing process and then bonded to a packaging die (lead frame, printed circuit board, etc.) or another semiconductor chip in the form of a semiconductor chip.

Meanwhile, in order to perform the back surface polishing process of the semiconductor substrate as described above, the lamination tape is attached to the front surface of the semiconductor substrate on which the wafer level process is completed.

That is, while the back surface of the semiconductor substrate is being polished, so that the front surface of the semiconductor substrate is not contaminated by silicon powders generated from the wafer, or the circuit patterns on the front surface of the semiconductor substrate are not damaged by the stress caused by the polishing operation. After lamination tape is attached to the front surface of the semiconductor substrate, the backside polishing process is performed.

1 is a cross-sectional view showing a lamination tape for a polishing process according to the present invention.

Referring to FIG. 1, the lamination tape 10 for a polishing process according to the present invention is formed on a base film layer 11, a first adhesive layer 12 formed on the base film layer, and the first adhesive layer. It consists of a second adhesive layer (13).

The base film layer 11 may be a polyethylene film, a polypropylene film, a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyurethane film, an ethylene vinyl acetate film, an ethylene-propylene copolymer film, an ethylene-ethyl acrylate copolymer film, Ethyl copolymer film, ethylene-methyl acrylate copolymer film, etc. can be used, It does not limit the material of the said base film layer in this invention.

In addition, the first adhesive layer may be a UV-curable pressure-sensitive adhesive, wherein the UV-curable pressure-sensitive adhesive refers to the pressure-sensitive adhesive to increase the cohesive force of the pressure-sensitive adhesive when UV is irradiated, the UV-curable pressure-sensitive adhesive is a cohesive force And acrylic resin with high elastic modulus can be used. Description of the UV-curable pressure-sensitive adhesive is obvious in the art, it will be omitted below.

In addition, the second adhesive layer may use a heat-curable pressure-sensitive adhesive, wherein the heat-curable pressure-sensitive adhesive refers to a pressure-sensitive adhesive when heat is applied, wherein the heat-curable pressure-sensitive adhesive is epoxy resin or silicone resin Can be used. Description of the heat-curable pressure-sensitive adhesive is a matter apparent in the art, it will be omitted below.

2 to 6 are schematic cross-sectional views illustrating a method of manufacturing a semiconductor device having a fuse box according to a first embodiment of the present invention. In this case, a represents a fuse region and b represents a bonding pad region.

First, referring to FIGS. 2A and 2B, a semiconductor substrate 100 having a fuse region and a bonding pad region and having circuit patterns (not shown) of a semiconductor device formed on a front surface thereof is prepared.

Subsequently, a fuse box A including the fuse 110 is formed in the fuse region on the semiconductor substrate, and a bonding pad 130 is formed in the bonding pad region.

An opening 120 formed of a silicon oxide film, a silicon nitride film, or a photosensitive polyimide film is formed on the entire surface of the semiconductor substrate, and the insulating film is etched to expose the bonding pads of the fuse and the bonding pad region of the fuse region. And 110a and 130a.

In this case, the semiconductor substrate may include a cutting line (C) for separating into individual semiconductor chip units by performing a sawing process.

However, the present invention is not limited to the specific structures of the fuse area and the bonding pad area, which are obvious in the art, and thus, the following detailed description will be omitted.

Next, referring to FIGS. 3A and 3B, a lamination tape for a back polishing process is attached to a front surface of a semiconductor substrate including the insulating layer to proceed a back polishing process.

At this time, the lamination tape for the back polishing process, as described above, the base film layer 11, the first adhesive layer 12 formed on the base film layer and the second adhesive formed on the first adhesive layer. And a second adhesive layer is deposited on the insulating film.

The lamination tape for the back polishing process is damaged while the back surface of the semiconductor substrate is polished, the front surface of the semiconductor substrate is contaminated by silicon powder generated from the wafer, or the circuit patterns on the front surface of the semiconductor substrate are damaged due to the stress caused by the polishing operation. In order to attach so as not to receive, the specific material is as described above, the detailed description thereof will be omitted.

3A and 3B, unlike FIG. 3A, which illustrates a bonding pad region, the cutting unit 13a is provided on the second adhesive layer 13 of the lamination tape. .

In this case, the cutting portion 13a of the second adhesive layer 13 of the bonding pad region is formed to correspond to the opening 130a of the insulating layer exposing the bonding pad 130. The adhesive layer 13 is separated into a region 13b corresponding to the opening 130a of the insulating film exposing the bonding pad by the cutting portion 13a and other regions.

That is, the second adhesive layer 13 of the bonding pad region is formed by being separated into a region 13b corresponding to the opening of the insulating film exposing the bonding pad by the cutting portion 13a and other regions, which will be described later. In removing the second adhesive layer by the process, separation of the region 13b corresponding to the opening of the insulating layer exposing the bonding pad and the other regions may be easily performed.

Subsequently, a process of polishing the back surface of the semiconductor substrate on which the lamination tape for the back polishing process is attached is performed. The backside polishing process is meaningful as a method of removing the diffusion layer formed on the backside and reducing the thickness of the semiconductor package according to the miniaturization trend of semiconductor products.

Next, referring to FIGS. 4A and 4B, UV is applied to a lamination tape attached to the entire surface of the semiconductor substrate.

Removal of the lamination tape attached to the entire surface of the semiconductor substrate, which will be described later, may be carried out by irradiating the lamination tape with UV. In this case, the adhesive force of the first adhesive layer 12 may be realized by irradiating UV. Can be.

That is, as described above, the first adhesive layer 12 may use a UV curable pressure sensitive adhesive. In this case, the UV curable pressure sensitive adhesive refers to a pressure sensitive adhesive that increases cohesion of the pressure sensitive adhesive when UV is irradiated. By irradiating the first adhesive layer with UV, the adhesive force between the first adhesive layer and the second adhesive layer is lowered to separate the first adhesive layer from the second adhesive layer, and the substrate is removed while the first adhesive layer is removed. The film layer 11 is removed at the same time.

On the other hand, irradiating UV to the lamination tape is irradiated using the mask 140.

In this case, referring to FIG. 4A, which illustrates a fuse region, the mask 140 disposed in the fuse region is entirely formed of a light transmitting region. Referring to FIG. 4B, which illustrates a bonding pad region, a mask disposed in the bonding pad region ( 140 includes a light blocking region 140a and a light transmitting region 140b.

The light blocking region 140a is a region which blocks UV light so that UV is not applied to the first adhesive layer, and the light blocking region 140a is formed in the opening 130a of the insulating layer exposing the bonding pads of the second adhesive layer. It is formed corresponding to the corresponding area | region 13b.

That is, the mask disposed in the bonding pad region and the mask disposed in the fuse region are one and the same mask, and the mask 140 corresponds to an area 13b corresponding to the opening of the insulating layer exposing the bonding pad of the second adhesive layer. The light blocking region 140a is formed in an area corresponding to the light blocking region 140a.

In addition, UV is not irradiated to the first adhesive layer of the region 13b corresponding to the opening 130a of the insulating layer exposing the bonding pad during the UV irradiation by the light blocking region 140a. Therefore, the adhesive force does not fall in the area | region 11b corresponding to the opening part of the insulating film which exposes a bonding pad among the 1st adhesion layers.

That is, in lowering the adhesive force of the first adhesive layer through UV irradiation, the adhesive force of the region 11b of the first adhesive layer corresponding to the opening 130a of the insulating film exposing the bonding pad is not lowered and the adhesive force is not reduced. Will be maintained.

Next, referring to FIGS. 5A and 5B, a process of removing the lamination tape attached to the entire surface of the semiconductor substrate is performed.

That is, the base film layer is simultaneously removed while removing the first adhesive layer whose adhesive force is decreased by the UV irradiation process as described above.

At this time, the adhesive force of the region 11b corresponding to the opening exposing the bonding pad of the first adhesive layer is not lowered and the adhesive force is maintained.

Thus, referring to FIG. 5A showing the fuse region, the adhesive force of the first adhesive layer on the fuse region is lowered so that the first adhesive layer and the second adhesive layer are separated, so that only the second adhesive layer 13 remains on the insulating film. do.

However, referring to FIG. 5B illustrating the bonding pad region, since the adhesive force of the region 11b corresponding to the opening 130a of the insulating film exposing the bonding pad of the first adhesive layer is not lowered and the adhesive force is maintained, this region In this case, the adhesive force between the first adhesive layer and the second adhesive layer is maintained, and thus, in the process of removing the first adhesive layer, a region corresponding to the opening 130a of the insulating film exposing the bonding pads of the second adhesive layer ( The second adhesive layer portion of 13b) is simultaneously removed.

As a result, although the second adhesive layer is formed entirely on the semiconductor substrate, the region 13b corresponding to the opening 130a of the insulating film exposing the bonding pads of the second adhesive layer is removed, and in this region, Since the second adhesive layer is not formed, the bonding pads can be exposed even if the second adhesive layer is formed on the semiconductor substrate.

At this time, as described above, the second adhesive layer 13 of the bonding pad region is separated into a region 13b corresponding to the opening of the insulating film exposing the bonding pad by the cutting portion 13a and other regions. Separation of these can proceed easily.

Meanwhile, as described above, the second adhesive layer is entirely formed on the semiconductor substrate, but the region 13b of the second adhesive layer corresponding to the opening of the insulating layer exposing the bonding pad may be removed to expose the bonding pad. Will be.

In the present invention, forming the second adhesive layer on the semiconductor substrate is to prevent the failure of the fuse box due to unintended static electricity generated during the semiconductor manufacturing process, the fuse box according to the first embodiment of the present invention In the method of manufacturing a semiconductor device having a second adhesive layer formed on a semiconductor substrate including a fuse box, that is, by protecting the open region of the fuse box through the second adhesive layer, through the open region of the fuse box It is possible to prevent the static electricity from flowing into the conductors in the fuse box, and thus to prevent the failure of the fuse box.

In addition, removing the second adhesive layer in the region 13b corresponding to the opening of the insulating film exposing the bonding pad to expose the bonding pad is for wire bonding by a later process, and bonding by the second adhesive layer. When the pad is covered, the bonding pad may be exposed by a separate additional process to perform the wire bonding process. In the present invention, the bonding pad may be exposed without a separate additional process in the process of removing the lamination tape.

Next, referring to FIGS. 6A and 6B, a sawing process is performed to separate a semiconductor substrate into individual semiconductor chip units. In this case, the sawing process on the semiconductor substrate may be performed as described above. It can be carried out through the cutting line (C).

In this case, referring to FIG. 6A, which illustrates a fuse area, a second adhesive layer 13 is formed on a fuse box including the fuse 110, so that a sawing process and chip attaching may be performed separately. It is possible to prevent a defective fuse box due to unintended static electricity generated in a semiconductor pick-up process.

In addition, referring to FIG. 6B showing the bonding pad region, the second adhesive layer of the region 13b corresponding to the opening of the insulating film exposing the bonding pad is removed to expose the bonding pad to perform wire bonding. .

Subsequently, although not shown in the drawing, a chip attach process, which is a process of attaching chips separated by individual semiconductor chip units on a chip support paddle on the surface of a lead frame, is performed. The wire bonding process of connecting the frame with a thin gold wire may be performed.

In this case, since the second adhesive layer 13 is formed on the fuse box including the fuse 110, it is possible to prevent a failure of the fuse box due to unintended static electricity.

Subsequently, although not shown in the drawing, a molding process may be performed by inserting a lead frame having a metal wire connection into a mold and injecting and sealing an epoxy molding compound (EMC) into the mold frame.

Since the chip attach process, the wire bonding process, and the molding process are obvious in the art, detailed descriptions thereof will be omitted.

At this time, before the molding process, the second adhesive layer 13 formed on the chips separated by individual semiconductor chips may be removed.

Removing the second adhesive layer, as described above, the second adhesive layer may use a heat curable pressure sensitive adhesive, wherein the heat curable pressure sensitive adhesive refers to the pressure-sensitive adhesive is reduced when heat is applied, After applying heat on the second adhesive layer to lower the adhesive force, the second adhesive layer can be removed.

7 and 8 are schematic cross-sectional views illustrating a method of manufacturing a semiconductor device having a fuse box according to a second embodiment of the present invention. In this case, a represents a fuse region and b represents a bonding pad region.

The manufacturing method of the semiconductor device including the fuse box according to the second embodiment of the present invention may be the same as the manufacturing method of the semiconductor device according to the first embodiment except for the following description.

First, referring to FIGS. 7A and 7B, a semiconductor substrate 200 having a fuse region and a bonding pad region and having circuit patterns (not shown) of a semiconductor element formed on a front surface thereof is prepared.

Subsequently, a fuse box including a fuse 210 is formed in the fuse region on the semiconductor substrate, and a bonding pad 230 is formed in the bonding pad region.

Thereafter, an insulating film 220 including a silicon oxide film, a silicon nitride film, or a photosensitive polyimide film is formed on the entire surface of the semiconductor substrate, and the insulating film is etched to expose the bonding pads of the fuse and the bonding pad area of the fuse area, respectively. Form an opening.

Subsequently, referring to FIGS. 7A and 7B, a lamination tape for a back polishing process may be attached to a front surface of the semiconductor substrate in order to proceed with a back polishing process.

At this time, the lamination tape for the back polishing process is a base film layer 11, the first adhesive layer 12 formed on the base film layer and the second adhesive layer 23 formed on the first adhesive layer. consist of.

On the other hand, FIG. 7B showing the bonding pad region is different from FIG. 7A showing the fuse region, and the opening 23b is provided in the second adhesive layer 23 of the lamination tape.

In this case, the opening 23b of the second adhesive layer is formed to correspond to the opening of the insulating layer exposing the bonding pad, and thus the second adhesive layer 23 of the bonding pad region exposes the bonding pad. The second adhesive layer is not formed in the region corresponding to the opening of the insulating film.

Subsequently, a process of polishing the back surface of the semiconductor substrate on which the lamination tape for the back polishing process is attached is performed.

Next, referring to FIGS. 8A and 8B, UV is applied to a lamination tape attached to the entire surface of the semiconductor substrate.

Removal of the lamination tape attached to the entire surface of the semiconductor substrate, which will be described later, may be carried out by irradiating the lamination tape with UV. In this case, the adhesive force of the first adhesive layer 12 may be realized by irradiating UV. Can be.

That is, as described above, the first adhesive layer 12 may use a UV curable pressure sensitive adhesive. In this case, the UV curable pressure sensitive adhesive refers to a pressure sensitive adhesive that increases cohesion of the pressure sensitive adhesive when UV is irradiated. By irradiating the first adhesive layer with UV, the adhesive force between the first adhesive layer and the second adhesive layer is lowered to separate the first adhesive layer from the second adhesive layer, and the substrate is removed while the first adhesive layer is removed. The film layer 11 is removed at the same time.

Meanwhile, in the method of manufacturing a semiconductor device according to the first embodiment of the present invention, a mask is used to irradiate UV to the first adhesive layer, but in the method of manufacturing a semiconductor device according to the first embodiment of the present invention, In order to irradiate UV to an adhesive layer, UV is irradiated across the entire surface without using a mask.

That is, in the first embodiment of the present invention, in the process of removing the first adhesive layer by maintaining the adhesive force of the region corresponding to the opening of the insulating film of the first adhesive layer to expose the bonding pad through the light blocking region of the mask Although the second adhesive layer portion of the region 13b corresponding to the opening of the insulating film exposing the bonding pad of the second adhesive layer is simultaneously removed, the second embodiment corresponds to the opening of the insulating film exposing the bonding pad. Since the 2nd adhesive layer is not formed in the area | region to make, such a process is unnecessary.

As a result, when the lamination tape attached to the entire surface of the semiconductor substrate is removed, the base film layer is simultaneously removed while the first adhesive layer whose adhesive force is lowered by the entire UV irradiation process as described above is removed. In this case, since the second adhesive layer is not formed in the region corresponding to the opening of the insulating layer exposing the bonding pad, when the process of removing the lamination tape is completed, the bonding pad is not covered by the second adhesive layer. Will be.

Therefore, by protecting the open area of the fuse box through the second adhesive layer, it is possible to prevent static electricity from flowing into the conductor in the fuse box through the open area of the fuse box, thereby preventing the failure of the fuse box. In addition, since the bonding pad is exposed without being covered by the second adhesive layer, it is possible to expose the bonding pad for performing the wire bonding process without any additional process.

The subsequent steps are the same as in the above-described first embodiment and will be omitted.

The present invention has been shown and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

1 is a cross-sectional view showing a lamination tape for a polishing process according to the present invention,

2 to 6 are schematic cross-sectional views illustrating a method of manufacturing a semiconductor device having a fuse box according to a first embodiment of the present invention;

7 and 8 are schematic cross-sectional views illustrating a method of manufacturing a semiconductor device having a fuse box according to a second embodiment of the present invention.

Claims (11)

Preparing a semiconductor substrate having a fuse region and a bonding pad region and having circuit patterns of semiconductor elements formed on a front surface thereof; Forming a fuse box including a fuse in the fuse region, and forming a bonding pad in the bonding pad region; Forming an insulating film having an opening for exposing the fuse and the bonding pad, respectively; Attaching a lamination tape for a back polishing process to an entire surface of the semiconductor substrate including the insulating layer; And Polishing a back side of the semiconductor substrate, The lamination tape for the back smoke-process may include a base film layer, a first adhesive layer formed on the base film layer, and a second adhesive layer formed on the first adhesive layer. Method of manufacturing the device. The method of claim 1, And the second adhesive layer has a cut portion, and the cut portion is formed corresponding to an opening of an insulating layer exposing the bonding pads. The method of claim 1, And the second adhesive layer has an opening, and the opening of the second adhesive layer is formed corresponding to the opening of the insulating film exposing the bonding pad. The method of claim 1, The first adhesive layer is a manufacturing method of a semiconductor device having a fuse box, characterized in that consisting of a UV curable pressure-sensitive adhesive. The method of claim 1, After polishing the back surface of the semiconductor substrate, further comprising lowering the adhesive force of the first adhesive layer by irradiating UV on the lamination tape attached to the front surface of the semiconductor substrate. Method of manufacturing the device. The method of claim 5, Irradiating UV to the lamination tape is irradiated using a mask, And the light blocking area is formed in a region corresponding to a region corresponding to an opening of the insulating layer exposing the bonding pad of the second adhesive layer. The method of claim 6, After the UV irradiation on the lamination tape, further comprising removing the lamination tape attached to the front surface of the semiconductor substrate, The removing of the lamination tape may include removing the substrate film layer, the first adhesive layer, and the second adhesive layer in a region corresponding to the opening of the insulating layer exposing the bonding pads. Manufacturing method. The method of claim 7, wherein And a second adhesive layer in a region corresponding to the opening of the insulating film exposing the bonding pad is removed to expose the bonding pad. The method of claim 5, The second adhesive layer has an opening, the opening of the second adhesive layer is formed corresponding to the opening of the insulating film exposing the bonding pad, After the UV irradiation on the lamination tape, further comprising removing the lamination tape attached to the front surface of the semiconductor substrate, The removing of the lamination tape is a method of manufacturing a semiconductor device having a fuse box, wherein the base film layer and the first adhesive layer are simultaneously removed. The method of claim 9, And a bonding pad exposed through the opening of the second adhesive layer. The method of claim 1, The second adhesive layer is a thermal curing pressure-sensitive adhesive manufacturing method of a semiconductor device having a fuse box, characterized in that.

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