KR20100078210A - Image sensor and method for manufacturing the same - Google Patents
Image sensor and method for manufacturing the same Download PDFInfo
- Publication number
- KR20100078210A KR20100078210A KR1020080136401A KR20080136401A KR20100078210A KR 20100078210 A KR20100078210 A KR 20100078210A KR 1020080136401 A KR1020080136401 A KR 1020080136401A KR 20080136401 A KR20080136401 A KR 20080136401A KR 20100078210 A KR20100078210 A KR 20100078210A
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- South Korea
- Prior art keywords
- layer
- photodiode
- via hole
- forming
- metal contact
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- 238000004519 manufacturing process Methods 0.000 title abstract description 14
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000005468 ion implantation Methods 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 115
- 239000011229 interlayer Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 16
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- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 2
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- 150000002739 metals Chemical class 0.000 claims 1
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- 238000005530 etching Methods 0.000 description 9
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- 150000002500 ions Chemical class 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76859—After-treatment introducing at least one additional element into the layer by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
This embodiment discloses an image sensor and a method of manufacturing the same.
The CMOS image sensor according to the related art has a structure in which a photodiode is disposed horizontally with a transistor.
Of course, although the disadvantages of the CCD image sensor have been solved by the horizontal CMOS image sensor according to the prior art, there are still problems with the horizontal CMOS image sensor according to the prior art.
That is, according to the horizontal CMOS image sensor of the prior art, a photodiode and a transistor are manufactured to be adjacent to each other horizontally on a substrate. Accordingly, an additional area for the photodiode is required, thereby reducing the fill factor area and also limiting the possibility of resolution.
In addition, according to the horizontal CMOS image sensor according to the prior art there is a problem that it is very difficult to achieve the optimization for the process of manufacturing a photodiode and a transistor at the same time. That is, in a fast transistor process, a shallow junction is required for low sheet resistance, but such a shallow junction may not be appropriate for a photodiode.
In addition, according to the horizontal CMOS image sensor according to the prior art, the size of the unit pixel is increased to maintain the sensitivity of the image sensor as additional on-chip functions are added to the image sensor, or The area for the photodiode must be reduced to maintain the pixel size.
However, when the pixel size is increased, the resolution of the image sensor is reduced, and when the area of the photodiode is reduced, the sensitivity of the image sensor is reduced.
An embodiment of the present invention is to provide an image sensor and a method of manufacturing the same that can provide a new integration of the circuit (circuitry) and photodiode.
An embodiment of the present invention is a logic chip consisting of an image chip for forming a color filter array and a micro lens after forming a photodiode using two chips, a driver IC for driving the same, and a logic array for providing additional functions. The present invention is to provide an image sensor and a method of manufacturing the same that can be three-dimensional integration of the image chip and logic chip using a single pad.
In addition, an image sensor and a manufacturing method thereof capable of reducing dark current by improving a dangling bond that may be generated due to etching of a photodiode are proposed.
An image sensor according to the present embodiment includes a substrate having an electrical junction region and a transistor, and a wiring connecting the electrical junction region or the transistor; A photodiode formed on the substrate; A via hole penetrating the photodiode and exposing a portion of the wiring; An ion implantation layer formed on sidewalls of the via hole; And a metal contact formed in the via hole and connecting the wiring layer and an impurity region of the photodiode.
In addition, the manufacturing method of the image sensor according to the present embodiment includes the steps of forming a circuit including a wiring on a semiconductor substrate; Forming an interlayer insulating layer on the substrate; Forming a photodiode on the interlayer insulating layer and forming a via hole in the photodiode to expose a portion of the wiring; Forming an ion implantation layer by implanting impurities into the via hole or the top surface of the photodiode; And forming a metal contact connected to the wire in the via hole.
According to the image sensor of the present embodiment and a method of manufacturing the same, a vertical integration of the readout circuit and the photodiode can be achieved, thereby improving the fill factor.
In addition, there is an advantage that can be bonded to the interlayer insulating layer on which the photodiode is formed to improve the physical bonding strength of the bonding surface.
In addition, since the ion implantation layer is formed on the sidewall of the via hole through which the photodiode is exposed, the dangling bond that may be formed on the sidewall of the via hole may be reduced, thereby improving dark current characteristics. .
Hereinafter, with reference to the accompanying drawings for the present embodiment will be described in detail. However, the scope of the idea of the present invention may be determined from the matters disclosed by the present embodiment, and the idea of the invention of the present embodiment may be performed by adding, deleting, or modifying components to the proposed embodiment. It will be said to include variations.
In the following description, the word 'comprising' does not exclude the presence of other elements or steps than those listed. In addition, in the accompanying drawings, the thickness thereof is enlarged in order to clearly express various layers and regions. In addition, the same reference numerals are used for similar parts throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only being another part "on top" but also having another part in the middle.
First, an image sensor configuration of an embodiment will be described with reference to FIGS. 1 and 9.
For reference, FIG. 9 illustrates the
1 and 9, an image sensor of an embodiment includes a
The
The
The
The
Unexplained reference numerals among the reference numerals of FIGS. 1 and 9 will be described in the following manufacturing method.
Hereinafter, a method of manufacturing an image sensor according to an embodiment will be described with reference to FIGS. 1 to 9.
First, referring to FIG. 1, the
The
The
The forming of the
For example, the
According to the embodiment, the device can be designed such that there is a potential difference between the source and the drain across the transfer transistor Tx, thereby enabling full dumping of the photo charge. Accordingly, as the photo charge generated in the photodiode is dumped into the floating diffusion region, the output image sensitivity may be increased.
That is, by forming an
Hereinafter, the dumping structure of the photocharge of the embodiment will be described in detail with reference to FIGS. 1 and 2.
Unlike the floating diffusion (FD) 131 node, which is an N + function in the embodiment, the P / N /
Specifically, the electrons generated by the
Since the maximum voltage value of the P0 / N- / P-
That is, in the embodiment, the reason why the P0 / N- / Pwell junction is formed instead of the N + / Pwell junction in the silicon sub (Si-Sub) of the
Therefore, unlike the case where the photodiode is simply connected with N + junction in the general technology, problems such as degradation of saturation and degradation of sensitivity may be avoided according to the embodiment.
Next, according to the embodiment, the first
To this end, the embodiment may form an N + doped region as the first conductivity
Meanwhile, in order to minimize the first
To this end, the embodiment may proceed with a plug implant after etching the
That is, the reason for N + doping locally only in the contact forming part as in the embodiment is to facilitate the formation of ohmic contact while minimizing the dark signal. As in the prior art, when N + Doping the entire Tx Source part, the dark signal may increase due to the substrate surface dangling bond.
3 shows another structure for the circuit. As shown in FIG. 3, a first
Referring to FIG. 3, an N +
In addition, when the N +
That is, the
Then, the E-Field of the surface of the
Referring back to FIG. 1, an
Next, referring to FIG. 4, a
In addition, the
The
In an embodiment, the first doped
The
Accordingly, the
Meanwhile, in the embodiment, the
Next, referring to FIG. 5, a
For example, the
The
A via
Thereafter, the
Next, referring to FIG. 6, a hydrogen ion implantation process is performed on the entire surface of the
That is, a process of injecting hydrogen (H 2 ) impurities into the
After performing the hydrogen impurity implantation process, the annealing process may be further performed.
In this case, by implanting hydrogen impurity ions, Si atoms constituting the surface of the
Next, referring to FIG. 7, an
As described above, since the
Although not shown, the
Next, referring to FIG. 8, a
For example, the
The
Accordingly, the
Next, referring to FIG. 9, a
Since the
Accordingly, the
This prevents the photodiode from being shorted because the
Next, a
Although not shown, an upper electrode, a color filter, and a micro lens may be formed on the
In example embodiments, a photodiode may be formed on the semiconductor substrate on which the readout circuit is formed to increase the fill factor.
In addition, since the photodiode is bonded on the interlayer insulating layer having a flat profile, physical bonding force may be improved.
In addition, an ion implantation layer is formed on a sidewall of the via hole through which the wiring is exposed to pass through the photodiode, thereby improving dark current characteristics by removing the dangling bond formed on the sidewall of the via hole.
In addition, the metal contact formed inside the via hole may be electrically connected only to the ohmic contact layer of the photodiode, so that the photocharge signal input and output generated by the photodiode may be efficiently performed.
The above-described embodiments are not limited to the above-described embodiments and drawings, and it is common in the technical field to which the present embodiments belong that various changes, modifications, and changes can be made without departing from the technical spirit of the present embodiments. It will be apparent to those who have
1 to 9 are views for explaining the configuration of the image sensor and the manufacturing method thereof according to the present embodiment.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080136401A KR20100078210A (en) | 2008-12-30 | 2008-12-30 | Image sensor and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080136401A KR20100078210A (en) | 2008-12-30 | 2008-12-30 | Image sensor and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
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KR20100078210A true KR20100078210A (en) | 2010-07-08 |
Family
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KR1020080136401A KR20100078210A (en) | 2008-12-30 | 2008-12-30 | Image sensor and method for manufacturing the same |
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KR (1) | KR20100078210A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115274926A (en) * | 2022-07-29 | 2022-11-01 | 全磊光电股份有限公司 | Preparation method of photoelectric detector structure |
-
2008
- 2008-12-30 KR KR1020080136401A patent/KR20100078210A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115274926A (en) * | 2022-07-29 | 2022-11-01 | 全磊光电股份有限公司 | Preparation method of photoelectric detector structure |
CN115274926B (en) * | 2022-07-29 | 2024-04-05 | 全磊光电股份有限公司 | Preparation method of photoelectric detector structure |
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