KR20100077440A - Gas distribution unit and atomic layer deposition apparatus having the same - Google Patents

Abstract

PURPOSE: A gas injection part and an atomic layer deposition device thereof are provided to prevent the defect of the thickness and the film quality of a thin film due to the rotation of a substrate or a susceptor by executing a deposition process with a fixed substrate. CONSTITUTION: A source gas spraying part(131) is located in the upper part of a horizontally supported substrate(10). The source gas spraying part sprays source gas(S1,S2) including a source material. A purge gas spraying part(133) sprays purge gas for the purge of the source gas to the substrate. The source gas spraying part comprises a first injection body and a second injection body. The second injection body selectively opens and closes the first flow path with the elevating movement.

Description

GAS DISTRIBUTION UNIT AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME

The present invention relates to an atomic layer deposition apparatus, and to provide an atomic layer deposition apparatus having a plasma source to improve reactivity, and to improve deposition speed and quality.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction thin film manufacturing method using (chemical vapor deposition, CVD) or the like is used.

The chemical vapor deposition method may include atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma organic chemical vapor deposition (plasma enhanced CVD, PECVD), and the like. Plasma organic chemical vapor deposition has been widely used due to the advantages of being able to deposit and fast forming thin films.

However, as the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. As a result, the use of an atomic layer deposition (ALD) method capable of forming a very fine pattern of atomic layer thickness very uniformly and having excellent step coverage is increasing.

The atomic layer deposition method (ALD) is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting multiple gas molecules into the process chamber at the same time to deposit a reaction product generated above the substrate on the substrate, the atomic layer deposition method includes one source material. Source gas is injected into the process chamber and then purged to physically adsorb the source gas on top of the heated substrate, and then source gas is chemically reacted only on the upper surface of the substrate by injecting a source gas containing another source material. It is different in that it deposits a chemical reaction product. The thin film implemented through such an atomic layer deposition method has a very good step coverage characteristics and has the advantage that it is possible to implement a pure thin film with a low impurity content, which is widely attracting attention.

In general, in the atomic layer deposition apparatus, a deposition gas composed of different kinds of source gases is injected while the shower head or susceptor rotates at high speed, and a thin film is formed on the surface of the substrate while the substrate sequentially passes through the deposition gas. In addition, in the conventional atomic layer deposition apparatus, a substrate is introduced into a process chamber and loaded into a susceptor, and a thin film is formed while rotating at a high speed while the susceptor is raised to a certain height, and then the acceptor is returned to the loading position when the deposition process is completed. Strong to unload the substrate.

However, the conventional atomic layer deposition apparatus has a low reactivity of the source gas, so that the amount of the source gas is physically adsorbed on the substrate, there is a problem that takes a long time deposition and low productivity. In addition, since the source gas that is not adsorbed on the substrate is discarded, the consumption of the source gas increases and the production cost increases. In addition, when the unreacted source gas remains in the chamber, particles may be generated as a by-product of the reaction as they are mixed with each other in the chamber rather than the substrate surface by the rotation of the susceptor or the showerhead. And may adversely affect the quality of the deposited film.

In addition, the conventional atomic layer deposition apparatus has a problem that the thickness and film quality of the thin film is locally poor according to the moving direction of the substrate by the high-speed rotation of the susceptor. That is, the high speed rotation of the susceptor causes a difference in density of the deposition gas on the susceptor. In addition, the substrate supported horizontally along the circumference of the circular susceptor passes through the portion where the deposition gas is injected while revolving about the center of the susceptor, and the substrate passes first through the region where the deposition gas is injected. There is a problem that the thickness and film quality of the thin film deposited on a later passing portion is uneven. In addition, a phenomenon in which the thickness of the thin film deposited on the edge portion of the substrate disposed on the edge side of the susceptor becomes thicker due to the centrifugal force.

The present invention has been made to solve the above-mentioned conventional problems and to provide an atomic layer deposition apparatus which improves the reactivity of a source gas.

In addition, the present invention is to provide an atomic layer deposition apparatus that can solve the problem that the thickness and film quality of the thin film due to the high speed rotation of the susceptor.

According to the embodiments of the present invention for achieving the above object of the present invention, a gas injection unit for an atomic layer deposition apparatus having a plasma generating unit for providing a plasma source gas is provided on the horizontally supported substrate And a source gas injector for injecting a source gas including a source material constituting a thin film on the substrate and a purge gas injector provided on the substrate side to inject a purge gas for purging the source gas onto the substrate. do. Here, the source gas injector is accommodated in the first injector having the first flow path for injecting the first source gas to the substrate and the first flow path to selectively open and close the first flow path by the lifting movement and the substrate And a second injector having a second flow path for injecting a second source gas.

The first flow path and the second injector may have a vertical or funnel shape in which a cross-sectional area is gradually increased toward the substrate. Here, the valve unit may be provided on the flow path for supplying the second source gas to the second injector to intermittently introduce the second source gas into the second injector. In addition, a sealing part interposed between the first injector and the second injector to seal an upper portion of the first flow path to prevent the outflow of the first source gas.

The purge gas injection unit is formed to inject the purge gas in all directions. In addition, the purge gas injection unit may have any one of a showerhead, a nozzle, and an air knife.

On the other hand, according to other, embodiments of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus having a plasma generating unit for providing a source gas into a plasma, a plurality of substrates are accommodated deposition process A process chamber providing a space to be performed, a susceptor provided in the process chamber to seat the plurality of substrates in a horizontal direction, and provided on the susceptor to have a one-to-one correspondence with the plurality of substrates to form a thin film as the substrate; A source gas injector for injecting a source gas containing a source material, a purge gas injector provided in the center of the susceptor to inject a purge gas for purging the source gas to the substrate, and the source gas in the process chamber And a plasma generator for generating a plasma between the injection unit and the susceptor. .

The plasma generator is formed to generate a capacitively coupled plasma (CCP) by an electric field between a pair of parallel electrodes. For example, the plasma generation unit may include a first electrode provided in the source gas injection unit, a second electrode provided in the susceptor in parallel with the first electrode, and a high frequency power supply to the first electrode or the second electrode. It is configured to include a power supply for applying. Here, the power supply unit may be a dual frequency (dual frequency) method for applying a high frequency power of different frequency bands to the first and second electrodes, respectively. In addition, the plasma generating unit includes a plurality of first and second electrodes corresponding to the number of the substrates one-to-one so as to generate plasma on each of the substrates individually, and the first electrode is provided in each of the source gas injection units. Each of the substrates may be mounted on the second electrode.

An exhaust unit is provided at the center of the process chamber to suck and exhaust the exhaust gas inside the process chamber. The source gas injector may include a first injector having a first flow path for providing a first source gas to the substrate, and accommodated in the first flow path to selectively open and close the first flow path by lifting and lowering. And a second injector having a second flow path for providing a second source gas, a third flow path connecting the first flow path and the exhaust part, and an opening and closing portion provided in the third flow path to open and close the third flow path. Can be configured. Here, the opening and closing portion may be provided to move up and down simultaneously with the second injector.

The purge gas injection unit is provided at the central portion of the susceptor and is formed to inject the purge gas in all directions. For example, the purge gas injection unit may have any one of a circular cross section or a polygonal cross section having a corner corresponding one to one to the number of substrates. In addition, the purge gas injection unit may have any one of a showerhead, a nozzle, and an air knife.

The susceptor may include a support block on which the substrate is horizontally seated, and the susceptor may be formed of a plurality of support blocks on which the plurality of substrates are seated on one support block or on which one substrate is seated, respectively. .

As described above, according to the present invention, first, by providing a plasma generating unit in the gas injection unit and the susceptor for providing a source gas to generate a plasma on the substrate to improve the reactivity of the source gas and to improve the deposition rate and film quality Can be.

Second, since the deposition process is performed in a fixed state without rotating the substrate, it is possible to prevent a problem that the thickness and film quality of the thin film due to the rotation of the substrate or the susceptor are poor.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, an atomic layer deposition apparatus 100 according to embodiments of the present invention will be described in detail with reference to FIGS. 1 to 8. For reference, FIG. 1 is a longitudinal cross-sectional view of an atomic layer deposition apparatus 100 according to an embodiment of the present invention, and FIG. 2 illustrates an example of the susceptor 102 in the atomic layer deposition apparatus 100 of FIG. 1. It is a perspective view for demonstrating. 3 is a plan view illustrating an example of the gas injection unit 103 in the atomic layer deposition apparatus 100 of FIG. 1. 4 and 5 are essential perspective views for explaining the structure and operation of an example of the gas injection unit 103 of FIG. 3, and FIGS. 6 and 7 are views of the gas injection unit 103 of FIGS. Sectional views for explaining the structure and operation of the modified embodiment. 8 is a perspective view illustrating main parts of an example of the plasma generators 122 and 132 in the atomic layer deposition apparatus 100 of FIG. 1.

Referring to FIG. 1, the atomic layer deposition apparatus 100 includes a process chamber 101, a susceptor 102, a gas injection unit 103, and a plasma generator 122 and 132. According to the present invention, the susceptor 102 and the gas injection unit 103 are fixed to each other, and the plasma generators 122 and 132 are configured to generate plasma on the respective substrates 10. Is formed.

The process chamber 101 accommodates a plurality of substrates 10 and provides a space for depositing a predetermined thin film on the surface of the substrate 10. Here, since the deposition process is performed in a low pressure atmosphere close to the vacuum, the atomic layer deposition apparatus 100 has a hermetic structure capable of maintaining a vacuum.

Hereinafter, an atomic layer deposition apparatus 100 in which four substrates 10 are accommodated and a deposition process is performed will be described as an example. However, the number of substrates 10 simultaneously accommodated in the atomic layer deposition apparatus 100 is not limited by the drawings and may be changed in various ways.

The substrate 10 may be a silicon wafer. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). have. In addition, the substrate 10 is not limited in shape and size by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle.

The susceptor 102 is provided in the process chamber 101 so that the plurality of substrates 10 are seated in the horizontal direction.

The gas injection unit 103 provides a deposition gas to the surface of the substrate 10 seated on the susceptor 102.

Here, the deposition gas refers to gases used in the process of depositing a thin film, and at least one gas containing a source material constituting the thin film to be deposited on the substrate 10 and a gas for purging the gas. Include. In the present embodiment, a second material including a source material constituting the thin film and chemically reacting with the first source gas S1 and the first source gas S1 physically adsorbed on the substrate 10 to form a thin film. A stable purge gas PG that does not chemically react with the source gas S2 and the substrate 10, the first source gas S1, the second source gas S2, and the deposited thin film is used. For example, in order to deposit a silicon thin film, the first source gas S1 may be formed of any one of silane (Silane, SiH4), silicon (Disilane, Si2H6), and silicon tetrafluoride (SiF4) containing silicon. In addition, the second source gas S2 may use oxygen (O 2) or ozone (O 3) gas. The purge gas PG may use any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more gases. However, the present invention is not limited thereto, and the number and type of deposition gases may be changed in various ways.

The gas injection unit 103 may include a source gas injector 131 for providing the first and second source gases S1 and S2 and a purge gas injector 133 for providing the purge gas PG. Is made of.

The source gas injector 131 is provided above the susceptor 102 in the process chamber 101 to inject the first and second source gases S1 and S2 into the substrate 10. do. The purge gas injector 133 is provided in the susceptor 102 to inject the purge gas PG.

The gas injection unit 103 is provided with a gas supply unit for supplying a deposition gas to the gas injection unit 103. For example, the gas supply part includes a first supply source 141 for supplying the first source gas S1, a second supply source 142 for supplying the second source gas S2, and the purge gas ( A third source 143 for supplying PG). The first and second sources 141 and 142 are connected to the source gas injector 131, and the third source 143 is connected to the purge gas injector 133.

In FIG. 1, the first and second sources 141 and 142 are connected to only one source gas injection unit 131, but the first and second supply sources may be connected to all source gas injection units 131. It will be readily understood that 141 and 142 are connected.

Meanwhile, according to the present invention, the susceptor 102 and the gas injection unit 103 are fixed to each other, and the gas injection unit 103 has a plurality of source gases corresponding one-to-one to the substrate 10. It consists of an injection unit 131 and one purge gas injection unit 133 in the center of the susceptor 102.

The susceptor 102 and the gas injection unit 103 are provided with plasma generators 122 and 132 for generating a plasma on the substrate 10. Here, the plasma generators 122 and 132 may generate a capacitively coupled plasma (CCP) to generate a plasma under a pressure condition inside the process chamber 101 maintained for the atomic layer deposition process. Will be generated.

That is, the plasma generators 122 and 132 are provided in the first electrode 132 and the susceptor 102 provided in the source gas injection unit 131 with the substrate 10 interposed therebetween. 10 consists of a second electrode 122 seated. In addition, the deposition gas is in a plasma state by an electric field according to the voltage difference between the first electrode 132 and the second electrode 122.

In addition, the plasma generators 122 and 132 include power supply units 151 and 152 for applying high frequency power to the first and second electrodes 132 and 122, and in particular, the power supply units 151 and 152. ) Generates plasma in a dual frequency manner in which high frequency power is applied to the first and second electrodes 132 and 122 at different frequency bands. For example, the high frequency power source of 27.12 MHz is applied to one of the first and second electrodes 132 and 122, and the high frequency power source of 13.56 MHz is applied to the other electrode of the power supply units 151 and 152. .

Here, an exhaust unit 135 is provided at the center of the process chamber 101 to suck and discharge the exhaust gas inside the process chamber 101. For example, the exhaust unit 135 is provided on an upper surface of the process chamber 101 in which the source gas injection unit 131 is formed, and in particular, the exhaust unit 135 may uniformly discharge the exhaust gas from the plurality of substrates 10. It is provided on the center of the process chamber 101 so that. For example, the exhaust unit 135 includes a plurality of exhaust holes 351 and an exhaust buffer 352 (see FIGS. 6 and 7) serving as a flow path of the exhaust gas sucked from the exhaust hole 351. One side of the exhaust buffer 352 is provided with an exhaust pump 136 for discharging the exhaust gas inside the exhaust buffer 352.

Referring to FIG. 2, the susceptor 102 includes a support block 121 and a support block 121 having a flat upper surface and a circular plate shape having a predetermined diameter so that the substrate 10 may be horizontally seated. It is provided in the lower portion is composed of a drive shaft 125 for supporting the support block 121. In addition, the four substrates 10 are seated at intervals of 90 ° along the circumferential direction of the susceptor 102.

Here, the shape of the susceptor 102 is not limited by the drawings and may have various forms. In addition, in the drawing, the susceptor 102 is formed of one support block 121 and the four substrates 10 have been described in which an example is seated on one support block 121, but the susceptor 102 is described. It is also possible to be provided with a plurality of susceptors 102 on which the one sheet of substrate 10 is respectively seated.

In the center of the susceptor 102 is provided a purge gas injector 133 for injecting purge gas PG to the substrate 10.

The purge gas injection unit 133 is provided at the center of the susceptor 102 to provide the purge gas PG toward the circumferential direction of the susceptor 102. For example, the purge gas injector 133 has a circular cross section to provide the purge gas PG to the radially disposed substrate 10 and has a hollow passage in which a flow path of the purge gas PG is formed. The purge gas purge hole 331 has a pillar shape and is densely formed on the outer circumferential surface of the purge gas injection unit 133. In addition, the purge gas injection unit 133 has a cylindrical shape having a predetermined height on the susceptor 102 surface.

The purge gas PG is supplied from the third supply source 143 to the purge gas injection unit 133 through the drive shaft 125.

However, the shape of the purge gas injector 133 is not limited to the drawing, and the purge gas injector 133 may have various shapes including a polygonal cross section. For example, the purge gas injection unit 133 may have a pillar shape having a regular hexagonal cross section such that a portion facing the substrate 10 becomes a plane. In addition, the size, number and arrangement of the purge holes 331 is not limited by the drawings, and may be disposed in various forms and may have a circular or polygonal hole or slit shape.

On the other hand, in the present embodiment has been described an example in which the purge gas injection unit 133 has a showerhead (shaderhead) form a plurality of holes are densely formed on the surface, the present invention is not limited by the drawings, the purge The gas injection unit 133 may have a nozzle or an air knife shape.

Referring to FIG. 3, the source gas injector 131 may be in one-to-one correspondence with the substrate 10 to inject the first and second source gases S1 and S2 into the substrate 10, respectively. The source gas injection unit 131 is provided.

4 to 5, the source gas injector 131 may include a first injector 311 having a flow path (hereinafter, referred to as a first flow path 341) of the first source gas S1. The second injection body 312 includes a flow path (hereinafter referred to as a second flow path 342) of the second source gas S2. The first supply source 141 is connected to the first flow path 341, and the first source gas S1 is injected, and the second supply source 142 is connected to the second flow path 342. The second source gas S2 is injected.

In particular, the second injector 312 is provided in the first flow path 341 to selectively open and close the first flow path 341 by lifting and lowering movement.

In detail, the gap between the inner surface of the first injector 311 and the outer surface of the second injector 312 becomes the first flow path 341, and the gap between the second injector 312. The first flow path 341 is closed while the second injector 312 is in close contact with the inner surface of the first injector 311. For example, the second injector 312 may have a vertical or funnel shape in which a cross-sectional area is gradually increased toward the substrate 10. The second flow path 342 is formed to penetrate the second injector 312 so that the second source gas S2 is injected from the lower surface of the second injector 312, and the second injector At the top of 312 the second source 142 is connected.

The second injector 312 is formed to be movable up and down in the first flow path 341, and the first in the first flow path 341 through the upper portion of the second injector 312. A sealing part 315 is provided to prevent the source gas S1 from flowing out. Here, the sealing unit 315 is preferably formed of a stretchable material by the movement of the second injector 312. For example, the sealing part 315 is connected to one side of the first flow path 341 and the upper one side of the second injector 312 to seal the first flow path 341 and to expand and contract a gasket. May be).

The operation of the source gas injection unit 131 will be described briefly as follows.

As shown in FIG. 4, when the second injector 312 moves downward, a predetermined gap between the first injector 311 and the second injector 312, that is, the first flow path. As the 341 is opened, the first source gas S1 is injected through the first flow path 341.

As shown in FIG. 5, when the second injector 312 moves upward and the first and second injectors 311 and 312 are in close contact with each other, the first flow path is closed to close the first source gas. Injection of S1 is stopped.

Here, the first source gas S1 is intermittently injected by the lifting movement of the second injector 312, while the second source gas S2 is continuously injected.

Meanwhile, unlike the above-described embodiment, the second source gas S2 may be intermittently injected such that the first source gas S1 and the second source gas S2 are alternately injected.

For example, as illustrated in FIGS. 6 and 7, the second supply source 142 is connected to the second injector 312 to supply the second source gas S2 to the second flow path. A valve unit 345 is provided for selectively interrupting the supply of the source gas S2. The supply of the second source gas S2 is intermittently opened and closed so that the second source gas S2 may be supplied alternately with the supply of the first source gas S1.

In addition, the first source gas S1 stops the supply of the first source gas S1 or flows the first source gas S1 to another place while the first flow path 341 is closed. There is a need. For example, the first supply source 141 is provided with a predetermined valve (not shown) for opening and closing on the flow path that is connected to the first flow path 341 and supplies the first source gas S1, When the first flow path 341 is closed, the supply of the first source gas S1 may be stopped. However, in the deposition process, the source gas is interrupted thousands of times in a very short cycle, but it may be difficult to control the interruption of such source gas through a valve and it is difficult to control precisely.

In this embodiment, for controlling the interruption of the first source gas S1, as illustrated in FIGS. 6 and 7, a third flow path (not shown) in which the exhaust part 135 communicates with the first flow path 341 is provided. An opening and closing part 346 may be provided to form a source exhaust hole 353 and a third opening 343, and to open and close the third passage 343 on the third passage 343.

Here, the opening and closing portion 346 is formed to be able to move up and down simultaneously with the second injector 312. In the drawing, reference numeral '347' is a driving unit 347 for simultaneously moving up and down the second injector 312 and the opening and closing unit 346.

That is, as shown in FIG. 6, when the second injector 312 moves downward and the first flow path 341 is opened, the opening / closing part 346 also moves downward. 343 is closed. The first source gas S1 supplied to the first flow path 341 is injected into the substrate 10 through the first flow path 341. Here, when the second injector 312 moves downward, the valve part 345 is closed to stop the injection of the second source gas S2.

As shown in FIG. 7, when the second injector 312 moves upward and the first flow path 341 is closed, the opening / closing part 346 also moves upward. ) Is opened, the first source gas S1 supplied to the first flow path 341 flows into the exhaust buffer 352 through the third flow path 343 and is discharged. Here, when the second injector 312 moves upward, the valve part 345 is opened to inject the second source gas S2 through the second flow path 342.

However, the shape and position of the opening and closing portion 346 is not limited by the drawings and may have various shapes that can open and close the third flow path 343.

Meanwhile, referring to FIG. 8, the plasma generators 122 and 132 are provided inside the process chamber 101 to generate plasma on the substrate 10 to improve the reactivity of the deposition gas and to increase the deposition rate. Membrane quality can be improved.

The plasma generators 122 and 132 include a first electrode 132 and a second electrode 122 which are a pair of flat plate electrodes parallel to each other to generate a capacitively coupled plasma on the substrate 10. The power supply unit 151 and 152 apply high frequency power to the first electrode 132 and the second electrode 122 to generate plasma in a dual frequency manner.

The first electrode 132 is provided in the source gas injection unit 131, and the second electrode 122 is provided in the susceptor 102 so as to face the first electrode 132. In particular, the plasma generators 122 and 132 are formed to individually generate plasmas on the substrate 10. That is, a plurality of first and second electrodes 132 and 122 are provided in one-to-one correspondence with the substrate 10, and the first electrodes 132 are provided in the source gas injection units 131. The substrate 10 is mounted on the second electrode 122, respectively.

When the high frequency power of a predetermined frequency band is applied to the first electrode 132 and the high frequency power of the other frequency band is applied to the second electrode 122, the plasma generators 122 and 132 provide the first and second electrodes. A predetermined electric field is formed by the voltage difference between the electrodes 132 and 122, and the plasma P is formed on the substrate 10 by the electric field. For example, a high frequency power source of 27.12 MHz is applied to one of the first and second electrodes 132 and 122 and a high frequency power source of 13.56 MHz is applied to the other electrode.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

2 is a perspective view illustrating an example of a susceptor in the atomic layer deposition apparatus of FIG. 1;

3 is a plan view for explaining an example of the source gas injection unit in the atomic layer deposition apparatus of FIG.

4 and 5 are main perspective views for explaining the structure and operation of the source gas injection unit of FIG.

6 and 7 are cross-sectional views illustrating the structure and operation of the source gas injection unit according to the modified embodiment of FIGS. 4 and 5;

8 is a perspective view illustrating main parts of an example of the plasma generation unit in the atomic layer deposition apparatus of FIG. 1.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: atomic layer deposition apparatus

101: process chamber 102: susceptor

103: gas injection unit 104: gas supply unit

121: support block 122: second electrode

125: drive shaft 131: source gas injection portion

132: first electrode 133: purge gas injection unit

135: exhaust part 136: exhaust pump

141: first source 142: second source

143: third source 151, 152: power supply

311 and 312: Injector 315: Sealing part

331: purge hole 341: first flow path

342: Second euro 343: Third euro

345: valve portion 346: opening and closing portion

347: drive unit 351: exhaust hole

352: exhaust buffer 353: source exhaust hole

P: plasma PG: purge gas

S1, S2: Source Gas

Claims (15)

In the gas injection unit for an atomic layer deposition apparatus, A source gas injector disposed on a horizontally supported substrate and injecting a source gas including a source material constituting a thin film on the substrate; And A purge gas injector provided on the substrate side to inject a purge gas for purging the source gas to the substrate; Including, The source gas injection unit, A first injector having a first flow path for injecting a first source gas into the substrate; And The second injector, which is accommodated in the first flow path and selectively opens and closes the first flow path by lifting and lowering movement, and has a second flow path configured to provide a second source gas to the substrate; Gas injection unit for an atomic layer deposition apparatus comprising a. The method of claim 1, And the first flow path and the second injector have a vertical or funnel shape whose cross-sectional area is gradually increased toward the substrate. The method of claim 1, A gas for an atomic layer deposition apparatus is provided on the flow path for supplying the second source gas to the second injector, the valve unit for intermittently supplying the second source gas to the second injector. Injection unit. The method of claim 1, A gas injection for the atomic layer deposition apparatus is interposed between the first injector and the second injector to seal an upper portion of the first flow path to prevent the outflow of the first source gas. unit. The method of claim 1, The purge gas injection unit is a gas injection unit for an atomic layer deposition apparatus, characterized in that formed to inject the purge gas in all directions. The method of claim 5, The gas injection unit for an atomic layer deposition apparatus, wherein the purge gas injection unit has any one of a showerhead, a nozzle, and an air knife. A process chamber in which a plurality of substrates are accommodated to provide a space in which a deposition process is performed; A susceptor provided in the process chamber to seat the plurality of substrates in a horizontal direction; A source gas injector provided on the susceptor so as to correspond to the plurality of substrates and injecting source gas including a source material constituting a thin film to the substrate; A purge gas injector provided in the center of the susceptor to inject a purge gas for purging the source gas to the substrate; And A plasma generation unit generating a plasma between the source gas injection unit and the susceptor in the process chamber; Atomic layer deposition apparatus comprising a. The method of claim 7, wherein The plasma generator generates a capacitively coupled plasma (CCP) by an electric field between a pair of parallel electrodes, A first electrode provided in the source gas injection unit; A second electrode provided on the susceptor in parallel with the first electrode; And A power supply unit applying high frequency power to the first electrode or the second electrode; Atomic layer deposition apparatus comprising a. The method of claim 8, The power supply unit is an atomic layer deposition apparatus, characterized in that the dual frequency (dual frequency) method for applying a high frequency power of different frequency bands to the first and second electrodes, respectively. The method of claim 8, The plasma generating unit includes a plurality of first and second electrodes corresponding to the number of the substrates one-to-one to generate plasma on each of the substrates, and each of the first electrodes is provided in each of the source gas injection units. And the second electrode is mounted on the substrate, respectively. The method of claim 7, wherein An exhaust unit is provided at the center of the process chamber to suck and exhaust the exhaust gas inside the process chamber. The source gas injection unit, A first injector having a first flow path for providing a first source gas to the substrate; And The second injector, which is accommodated in the first flow path and selectively opens and closes the first flow path by lifting and lowering movement, and has a second flow path configured to provide a second source gas to the substrate; A third flow path connecting the first flow path and the exhaust part; And An opening and closing portion provided in the third flow path to open and close the third flow path; Including, And the opening and closing portion is provided to move up and down simultaneously with the second injector. The method of claim 7, wherein The purge gas injection unit is provided in the central portion of the susceptor atomic layer deposition apparatus, characterized in that formed to inject the purge gas in all directions. The method of claim 12, The purge gas injection unit is an atomic layer deposition apparatus, characterized in that any one of a circular cross section or a polygonal cross section having a corner corresponding to the number of the substrate one to one. The method of claim 12, The purge gas injection unit is an atomic layer deposition apparatus, characterized in that any one of the form of a showerhead (showerhead), a nozzle, an air knife (air knife). The method of claim 7, wherein The susceptor includes a support block on which the substrate is horizontally seated, and the susceptor is formed of a plurality of support blocks on which the plurality of substrates are seated on one support block or on which one substrate is seated, respectively. An atomic layer deposition apparatus.

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