KR20100062103A - A cooling tube and single crystal ingot growth apparatus having the same - Google Patents

Abstract

PURPOSE: A cooling tube for cooling a single crystal ingot and a single crystal ingot growth apparatus including the same are provided to improve a production yield per unit hour by rapidly increasing a growing speed of the single crystal ingot in order to improve a cooling efficiency of the single crystal ingot. CONSTITUTION: An outer tube(12) forms a circulating space of a cooling water in an interval with an interior tube(11). A heat absorbing unit(13) forms a groove(13a) on a side facing to a single crystal ingot. The heat absorbing unit absorbs heat radiated from the ingot in a single crystal ingot growing process. A crucible contains a silicon solution. A heater heats the crucible.

Description

Water cooling pipe for cooling single crystal ingot and single crystal ingot growth apparatus having same {A COOLING TUBE AND SINGLE CRYSTAL INGOT GROWTH APPARATUS HAVING THE SAME}

The present invention relates to a single crystal ingot growth apparatus, and to a single crystal ingot cooling water cooling tube capable of obtaining a high pulling speed of a single crystal ingot by improving the cooling efficiency of the single crystal ingot during single crystal ingot growth, and a single crystal ingot growth apparatus having the same. .

Silicon wafers, which are mainly used as substrates in the manufacture of semiconductor devices, generally produce high purity polycrystalline silicon, followed by Czochralski (CZ) crystal growth method or floating-zone (FZ) crystal growth method. Single crystals are grown from polycrystalline silicon to produce single crystal silicon rods, and thinly cut to produce silicon wafers. The surface of the wafer is mirror polished, cleaned, and finally manufactured.

The single crystal ingot growth apparatus is equipped with a water cooling tube for cooling a single crystal ingot for cooling the single crystal ingot to improve the pulling speed of the ingot during single crystal ingot growth.

The conventional single crystal ingot cooling water cooling tube is formed in the form of a double tube consisting of an inner tube and an outer tube to form a space in which the cooling water flows while the inside is sealed, and the inlet and outlet of the cooling water are formed in the outer tube, respectively. In addition, a heat absorbing member is attached to the inner wall of the water cooling tube to absorb radiant heat emitted from the ingot during single crystal ingot growth.

However, since the heat absorption member provided in the conventional single crystal ingot cooling water cooling tube has a constant surface area facing the ingot, there is a limit in absorbing radiant heat from the ingot and cooling efficiency is lowered. Therefore, the monocrystalline ingot is not cooled efficiently during the growth of the single crystal ingot, and thus the pulling speed of the ingot cannot be quickly improved, and the production yield per unit time is reduced.

The present invention has been made to solve the above problems, an object of the present invention is to provide a single-crystal ingot cooling water cooling tube that can efficiently absorb the radiant heat from the single crystal ingot during the growth of single crystal ingot to improve the cooling efficiency of the single crystal ingot. To provide.

Another object of the present invention is to provide a single crystal ingot growth apparatus capable of improving the production efficiency per unit time by improving the cooling efficiency of the single crystal ingot by using the water cooling tube for cooling the single crystal ingot, thereby increasing the pulling speed of the single crystal ingot.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

Single crystal ingot cooling water cooling tube according to an embodiment of the present invention for achieving the above object, the inner tube, the outer space to form a flow space of the cooling water between the inner tube and the inlet and outlet of the cooling water are respectively formed Grooves are formed on the inner wall of the inner tube and the inner tube and face the single crystal ingot, and may include a heat absorbing part that absorbs radiant heat emitted from the ingot when the single crystal ingot is grown.

In addition, the groove may have a shape in which the surface area absorbing the radiant heat is expanded, and preferably, the groove may be formed in a semicircular shape, polygonal shape, or a combination thereof on the inner surface of the heat absorbing part.

In addition, the heat absorbing portion is preferably formed to protrude from the lower end of the inner tube.

In addition, the heat absorbing portion is preferably made of a graphite material.

In addition, the single crystal ingot cooling water cooling tube of the present invention, a water cooling tube for forming a circulation cycle in which the cooling water is introduced and discharged, and grooves are formed on the inner wall of the water cooling tube and faces the single crystal ingot. It may include a heat absorbing portion for absorbing the radiant heat emitted from the ingot during single crystal growth.

Single crystal ingot growth apparatus according to an embodiment of the present invention for achieving the above object, a chamber for growing a single crystal ingot, a crucible provided in the chamber and accommodated in the silicon solution, is provided in the chamber and the And a heater for heating the crucible, and a water cooling tube for cooling the single crystal ingot that is provided inside the chamber and surrounds and cools an outer portion of the single crystal ingot growing from the silicon solution.

Specific details of other embodiments are included in the detailed description and the drawings.

According to the single crystal ingot cooling water cooling tube of the present invention and the single crystal ingot growth apparatus having the same, the radiant heat is efficiently absorbed from the single crystal ingot during the growth of the single crystal ingot to improve the cooling efficiency of the single crystal ingot, thereby increasing the pulling speed of the single crystal ingot. By speeding up, the production yield per unit time can be improved.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a single crystal ingot cooling water cooling tube and a single crystal growth apparatus including the same according to exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid unnecessarily obscuring the subject matter of the present invention.

1 is a cross-sectional view schematically showing a water cooling tube for cooling a single crystal ingot according to an embodiment of the present invention.

As shown in FIG. 1, the single crystal ingot cooling water cooling tube 10 of the present invention may include an inner tube 11, an outer tube 12, a heat absorption unit 13, and the like.

The inner tube 11 may be formed in a cylindrical shape having an upper and lower surface open to surround the outside of the ingot IG (see FIG. 7) during single crystal ingot growth.

The outer tube 12 is formed in a cylindrical shape having a diameter larger than the diameter of the inner tube 11, and forms a flow space of the cooling water between the inner tube 11 and.

The outer tube 12 is formed with an inlet 12a through which the coolant flows into one side of the upper side, and a discharge port 12b through which the coolant is discharged from the other side of the upper side.

Although not shown in the figure, the cooling water inlet 12a and the cooling water outlet 12b are connected to an external cooling water circulator so that the circulation cycle in which the cooling water is repeatedly introduced and discharged is repeated.

The inner tube 11 and the outer tube 12 are preferably made of an opaque metal material such as stainless steel.

The heat absorber 13 is provided on the inner wall of the inner tube 11 so as to absorb the radiant heat emitted from the ingot IG during single crystal ingot growth.

The heat absorption part 13 is formed in a shape corresponding to the inner wall of the inner tube 11, for example, a cylindrical shape, and an outer circumferential surface thereof is attached to the inner wall of the inner tube 11, and a groove is formed on the inner circumferential surface opposite to the single crystal ingot IG. Grooves 13a are formed.

The groove 13a preferably expands the surface area for absorbing radiant heat to maximize the cooling effect of the ingot IG by absorbing more radiant heat emitted from the ingot IG and transferring it to the water cooling tube 10. .

In FIG. 1, the groove 13a exemplifies a configuration in which an enlarged cross section is formed in a plurality of triangular shapes on the inner circumferential surface of the heat absorbing part 13, but the groove 13a is not limited thereto. It may have an enlarged cross section formed into a semicircle, polygon or a combination thereof.

2 to 6 are exemplary views showing various shapes of grooves formed in the heat absorption unit among the components of the water cooling tube for cooling the single crystal ingot of the present invention.

As shown in FIG. 2, the groove 13b may have an extended cross section formed in a semicircular shape on the inner circumferential surface of the heat absorbing portion 13.

In addition, as shown in FIG. 3, the groove 13c may have an extended cross section formed in a plurality of squares on the inner circumferential surface of the heat absorbing part 13.

In addition, as shown in FIG. 4, the grooves 13a and 13b may have extended cross sections formed in a combination of triangular and semicircular shapes on the inner circumferential surface of the heat absorbing portion 13.

In addition, as shown in FIG. 5, the grooves 13a and 13c may have an extended cross section formed in a combination of triangular and square shapes on the inner circumferential surface of the heat absorber 13.

In addition, as shown in FIG. 6, the grooves 13b and 13c may have an extended cross section formed in a plurality of semicircle and square shapes on the inner circumferential surface of the heat absorbing portion 13.

That is, in the present invention, the grooves 13a, 13b, and 13c formed in the heat absorbing part 13 have various extended cross-sectional shapes facing the ingot IG so as to absorb the radiant heat emitted from the ingot IG to the maximum. Can be selected.

The heat absorbing part 13 may be formed to protrude slightly from the lower end of the inner tube 11. Therefore, it is possible to more effectively absorb heat inside the chamber 110 in proximity to the silicon solution SM located in the lower region of the water cooling tube 10 as well as the inner region of the water cooling tube 10.

The heat absorber 13 is made of graphite and the like, and is preferably formed in black so as to absorb the radiant heat from the ingot IG well.

In addition, the heat absorption unit 13 is preferably coated with a surface coating, such as SIC coating to prevent contamination during single crystal ingot growth. Here, the SIC does not require a CVD coating, and is closer to the theoretical density of the SIC than the RB-SIC and S-_SIC, and excellent in mechanical properties, chemical resistance and plasma resistance.

7 is a schematic cross-sectional view of a single crystal ingot growth apparatus having a water cooling tube for cooling a single crystal ingot according to an embodiment of the present invention.

As shown in FIG. 7, the single crystal ingot growth apparatus 100 according to the exemplary embodiment of the present invention includes a chamber 110, a crucible 120, a heater 130, a pulling unit 140, and a water cooling tube 10. And the like.

The chamber 110 provides a space in which predetermined processes are performed to grow a single crystal ingot IG for a silicon wafer used as an electronic component material such as a semiconductor. Here, a typical manufacturing method for the growth of silicon single crystal ingot (IG) is Czochralsk (CZ), in which seed crystals (not shown), which are single crystals, are immersed in molten silicon, and the crystals are grown while slowly pulling up. There is a law. According to this method, first, a necking process of growing thin and long crystals from seed crystals is followed by a soldering process of growing the crystals in the radial direction to a target diameter, and then having a constant diameter. After the body growing process to grow into crystals, after the body grows to a certain length, the single crystal growth is completed through a tailing process that gradually reduces the diameter of the crystal and finally separates it from the molten silicon. .

The radiant heat insulator 111 may be installed on the inner wall of the chamber 110 such that heat of the heater 130, which will be described later, is not discharged to the side wall of the chamber 110.

Recently, the oxygen concentration occupies a large part as a main quality item of the silicon single crystal wafer, and in order to control the oxygen concentration at the time of growing the silicon single crystal, various factors such as the pressure condition inside the rotation of the quartz crucible 120 to be described below are adjusted and have. In particular, in order to control the oxygen concentration, argon gas may be injected into the chamber 110 of the silicon single crystal growth apparatus and discharged downward.

The crucible 120 is provided inside the chamber 110 to contain the silicon solution SM and is made of quartz. A crucible support 121 made of graphite may be provided outside the quartz crucible 120 to support the quartz crucible 120. The crucible support 121 is fixedly installed on the rotating shaft 123, and the rotating shaft 123 is rotated by a driving means (not shown) to maintain the same height as the solid liquid interface while rotating and lifting the quartz crucible 120. Do it.

The heater 130 is provided inside the chamber 110 to heat the quartz crucible 120. In more detail, the heater 130 may be formed in a cylindrical shape surrounding the crucible support 121. The heater 130 melts the high-purity polycrystalline silicon mass loaded in the quartz crucible 120 to make the silicon solution SM.

The pulling means 140 is installed on the upper portion of the chamber 110 so that the cable 141 can be wound up and pulled up. The seed crystal for growing the single crystal ingot IG is fixed to the lower portion of the cable 141 while being brought into contact with the silicon solution SM in the quartz crucible 120. The pulling means 140 rotates while pulling up the cable 141 when the single crystal ingot IG grows, and the silicon single crystal ingot IG is rotated about the same axis as the rotation axis 123 of the quartz crucible 120. Pull up while rotating in a direction opposite to the rotation direction of the crucible 120.

The water cooling tube 10 is installed at the upper end of the chamber 110 so that the single crystal ingot IG, which is pulled up while growing in the silicon solution SM of the quartz crucible 120, is cooled while passing through the inside thereof. ) Is located inside.

The water cooling tube 10 is installed at the outer edge of the chamber 110 to detect the solidification interface, which is a contact portion between the single crystal ingot IG and the silicon solution SM, and to measure the diameter and growth rate of the single crystal ingot IG and the temperature of the heater. It is preferable to be installed at a position that does not interfere with the sensing operation of the first and second sensing sensors (not shown) for controlling.

As described above with reference to FIGS. 1 to 6, the water cooling tube 10 absorbs the radiant heat emitted from the single crystal ingot IG to the maximum and transmits the same to the water cooling tube 10 to maximize the cooling effect of the ingot IG. On the inner side facing the ingot IG, there is provided a heat absorbing portion 13 which extends the surface area in the shape of a groove 13a, 13b, 13c formed in a semicircle, polygon or a combination thereof.

The single crystal ingot growth apparatus 100 having the single crystal ingot cooling water cooling tube 10 of the present invention configured as described above has a heat absorbing part in which grooves 13a, 13b, and 13c are formed on the inner surface of the water cooling tube 10. (13), the surface area is expanded to effectively absorb the radiant heat emitted from the ingot (IG). That is, when the single crystal grows, the ingot IG passes through the inside of the water cooling tube 10 and absorbs radiant heat efficiently and quickly through the grooves 13a, 13b, and 13c of the heat absorbing unit 13, thereby cooling the water cooling tube ( The cooling effect of the ingot IG can be improved by transmitting to 10). In addition, the heat absorbing portion 13 in which the grooves 13a, 13b, and 13c are formed is formed to protrude slightly from the lower end of the inner tube of the water cooling tube 10, so that not only the inner region of the water cooling tube 10 but also the water cooling tube 10 may be formed. The G value of the ingot IG may be improved by more effectively absorbing heat in the chamber 110 adjacent to the silicon solution SM positioned in the lower region. Therefore, by maximizing the cooling effect of the ingot (IG) during the single crystal growth, it is possible to raise the single crystal ingot (IG) at a high speed, thereby improving the production yield of the ingot (IG) per unit time.

8 is a graph showing a result of comparing the amount of heat absorbed in the conventional single crystal ingot cooling water cooling tube and the single crystal ingot cooling water cooling tube according to the present invention.

As can be seen in the graph of FIG. 8, the amount of heat absorbed from the ingot IG during single crystal growth is applied to the conventional water cooling tube in the case of applying the single crystal ingot cooling water cooling tube 10 according to the present invention (leader ①). It absorbed about 10% more heat than ②). This is because the water cooling tube 10 having the grooves 13a, 13b, and 13c has a high efficiency of absorbing radiant heat from the single crystal ingot IG, thereby absorbing more heat than conventionally absorbed heat. As a result, more heat exchange occurs between the high temperature heat of the single crystal ingot IG and the coated water cooling tube 10 so that the single crystal ingot IG can be quickly cooled even if the single crystal ingot IG is pulled up at a high pulling speed. Therefore, the rework time corresponding to the natural cooling time can be reduced even after the growth of the single crystal ingot IG is completed.

9 is a view showing a comparison of the experimental results of determining the crystal region by taking a vertical sample to determine the quality results of the ingot grown using a conventional single crystal ingot cooling water cooling tube and a single crystal ingot cooling water cooling tube according to the present invention. to be.

According to the experimental results, when the conventional single crystal ingot cooling water cooling tube is applied as shown in FIG. 9A, the P-band was confirmed at the pulling rate of 0.54 mm / min in the ingot IG during single crystal growth. Here, the P-band is one of the crystal regions generated during single crystal growth, and starts to be generated from the end of the PV corresponding to the defect-free region. That is, the beginning of the P-band corresponds to the end of the defect free area. On the contrary, when the single crystal ingot cooling water cooling tube 10 according to the present invention is applied as shown in FIG. 9B, the ingot IG has a P-band at a pulling speed of 0.57 mm / min. That is, according to the present invention, as a result of evaluating the quality of the vertical sample, the pulling speed of the ingot IG was improved by 0.03 mm / min compared to the conventional method by improving the G value of the ingot IG, thereby improving the production yield per unit time. Here, G value means the temperature gradient in a solid-liquid interface. In other words, the G value means the temperature difference between the silicon solution (SM) in the liquid-liquid interface and the single crystal rod of the solidified solid. The larger the temperature difference, the higher the G value is, and the faster the pulling speed of the ingot becomes.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a cross-sectional view schematically showing a water cooling tube for cooling a single crystal ingot according to an embodiment of the present invention.

2 to 6 are exemplary views showing various shapes of grooves formed in the heat absorption unit among the components of the water cooling tube for cooling the single crystal ingot of the present invention.

7 is a schematic cross-sectional view of a single crystal ingot growth apparatus having a water cooling tube for cooling a single crystal ingot according to an embodiment of the present invention.

8 is a graph showing a comparison of the amount of heat absorbed in the conventional single crystal ingot cooling water cooling tube and the single crystal ingot cooling water cooling tube according to the present invention.

9 is a view showing a comparison of the quality results of ingots grown using a single crystal ingot cooling water cooling tube and a single crystal ingot cooling water cooling tube according to the present invention.

<Description of Symbols for Main Parts of Drawings>

10: water cooling tube for single crystal ingot cooling 11: inner tube

12: outer tube 13: heat absorption portion

13a, 13b, 13c: groove 100: single crystal ingot growth apparatus

110: chamber 120: crucible

130: heater 140: raising means

Claims (7)

Inner tube; An outer tube which forms a flow space of the cooling water between the inner tube and the inlet and the outlet of the cooling water are respectively formed; And A water cooling tube for cooling a single crystal ingot provided on an inner wall of the inner tube and having a groove formed on a surface facing the single crystal ingot and including a heat absorbing part for absorbing radiant heat emitted from the ingot during single crystal ingot growth. The water cooling tube of claim 1, wherein the groove has a shape in which a surface area for absorbing the radiant heat is expanded. The water cooling tube for single crystal ingot cooling according to claim 2, wherein the groove has an extended cross section formed by a semicircle, a polygon, or a combination thereof. The water cooling tube of claim 1, wherein the heat absorbing portion is formed to protrude from a lower end of the inner tube. The water cooling tube for cooling a single crystal ingot of claim 1, wherein the heat absorbing part is made of a graphite material. A water cooling tube forming a circulation cycle in which cooling water is introduced and discharged; And And a groove formed on an inner wall of the water cooling tube, the groove being opposed to the single crystal ingot, and including a heat absorbing part to absorb radiant heat emitted from the ingot during single crystal growth. A chamber for growing a single crystal ingot; A crucible provided inside the chamber and containing a silicon solution; A heater provided inside the chamber and heating the crucible; And It is provided in the chamber, and includes a water cooling tube for cooling single crystal ingot cooling surrounding the outer periphery of the single crystal ingot growing from the silicon solution, The single crystal ingot cooling water cooling tube, Inner tube; An outer tube which forms a flow space of the cooling water between the inner tube and the inlet and the outlet of the cooling water are respectively formed; And The single crystal ingot growth apparatus is provided on the inner wall of the inner tube, a groove is formed on the surface facing the single crystal ingot, and includes a heat absorbing portion for absorbing the radiant heat emitted from the ingot during the growth of the single crystal ingot.

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