KR20100058316A - Led package having a high performance radiator - Google Patents

Led package having a high performance radiator Download PDF

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Publication number
KR20100058316A
KR20100058316A KR1020080117074A KR20080117074A KR20100058316A KR 20100058316 A KR20100058316 A KR 20100058316A KR 1020080117074 A KR1020080117074 A KR 1020080117074A KR 20080117074 A KR20080117074 A KR 20080117074A KR 20100058316 A KR20100058316 A KR 20100058316A
Authority
KR
South Korea
Prior art keywords
layer
wiring pattern
heat sink
circuit wiring
led package
Prior art date
Application number
KR1020080117074A
Other languages
Korean (ko)
Inventor
김덕용
Original Assignee
주식회사 케이엠더블유
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 케이엠더블유 filed Critical 주식회사 케이엠더블유
Priority to KR1020080117074A priority Critical patent/KR20100058316A/en
Priority to PCT/KR2009/006929 priority patent/WO2010059013A2/en
Publication of KR20100058316A publication Critical patent/KR20100058316A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: A light emitting diode package including a superior heat sink is provided to improve the heat emission efficiency of the package by forming a thin insulation film on the heat sink using a deposition method. CONSTITUTION: A heat sink plate(1) is prepared. An insulation film(2) is formed on the heat sink plate using a deposition method. A circuit wiring pattern layer(3) is formed on the insulation film using the deposition method, a thermal spraying method or an anodizing method. A light emitting diode chip(4) is arranged on the circuit wiring pattern layer.

Description

LED package having a high heat radiation board {LED package having a high performance radiator}

The present invention relates to an LED package, and more particularly, to an LED package having a high heat dissipation substrate for efficiently dissipating heat generated when the LED is driven.

Generally, a light emitting diode, that is, an LED, refers to a device that receives an electrical signal and outputs the light as light, and forms a molding unit for mounting the light emitting chip on a printed circuit board on which an electrode for receiving the electrical signal is formed and then sealing the light emitting chip. To prepare.

The brightness of the LED is proportional to the current applied to the light emitting chip. Therefore, to brighten the erection of LED, high current should be applied

In addition, since the heat emitted by the light emitting chip is also proportional to the current applied to the light emitting chip, when a high current is applied, the LED is damaged due to the heat radiating in proportion to the current, thereby causing a problem in that it is impossible to apply a high current indefinitely.

Accordingly, many studies have been conducted to reduce heat generated by light emitting chips.

However, in the conventional LED package structure, as shown in FIG. 1, the PCB substrate 20 having the circuit pattern formed on the metal heat dissipation plate 10 is adhered thereto, and the LED chip 30 is mounted thereon. It is a structure that connects.

In this case, the LED chip is usually formed in one piece up to a submount.

In general, the lower the thermal conductivity or the thicker the material, the lower the thermal conductivity.

By the way, the conventional LED parity structure has to pass through the thick insulating layer of the sub-mount and PCB substrate in the transfer process from the light emitting chip to the heat sink, so that effective heat dissipation is not achieved.

In addition, it is difficult to multi-package multiple LED chips since the structure is generally single-packaged.

The problem to be solved by the present invention in view of the above problems,

The present invention provides an LED package having a high heat dissipation substrate capable of improving heat dissipation characteristics and reducing product thickness by forming an insulating film layer or a circuit wiring pattern having good insulation performance and thin thickness by using a deposition method.

In addition, the present invention provides an LED package having a high heat dissipation substrate capable of improving heat dissipation characteristics and reducing product thickness by forming an insulating film layer having good insulation performance and thin thickness by treating the heat sink by an anodizing method.

The present invention for solving the above problems,

In the LED package,

A heat sink;

An insulating coating layer formed on the heat sink by a deposition method;

A circuit wiring pattern layer which forms a conductive layer on the insulating film layer by a deposition method and then forms a pattern by an etching method;

At least one LED chip is mounted directly on the circuit wiring pattern layer.

The present invention has the effect of forming an insulating film layer having a good insulation performance and a thin thickness by using a deposition method on a heat sink. This has the effect of improving the heat dissipation efficiency.

In addition, the present invention has the effect of forming a thinner circuit wiring pattern by forming a thin conductive layer on the insulating film layer by using a deposition method and forming a circuit wiring pattern layer by using an etching method and thus heat There is an effect that the emission efficiency is improved.

When described in detail with reference to the accompanying drawings a preferred embodiment of the present invention as follows.

2a and 2b is a structural diagram according to a preferred embodiment of the LED package having a high heat radiation substrate of the present invention.

2, a preferred embodiment according to the present invention,

A heat sink 1;

An insulating coating layer (2) formed on the heat sink (1) by a deposition method;

A circuit wiring pattern layer (3) formed on the insulating film layer by a deposition method and an etching method;

The LED chip 4 is connected to the electrode terminal of the circuit wiring pattern layer 3.

Hereinafter, the configuration in more detail as follows.

In general, an LED package requires a heat sink for heat dissipation, a circuit wiring pattern layer for supplying power to the LED, an LED connected to the circuit wiring pattern layer, and an insulating layer for insulation between the circuit wiring pattern layer and the heat sink. Do.

 At this time, the material having a low thermal conductivity on the path through which heat is released or the thicker the thickness, the lower the thermal conductivity.

Therefore, the gist of the present invention is to significantly reduce the thickness of the insulating layer and the circuit wiring pattern layer which are most disturbing on the path through which heat is released.

First, the heat sink 1 is provided. This heat sink 1 has a high thermal conductivity, and is not limited to metals and nonmetals.

In addition, the insulating film layer 2 is formed on the heat sink 1 by using a deposition method.

The deposition methods include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

Physical vapor deposition (PVD) includes evaporation deposition using vapor of metal, sputtering deposition, which is a method of physically impacting a material.

Chemical vapor deposition (CVD) includes low pressure chemical vapor deposition (Low Pressure CVD, LPCVD), plasma enhanced chemical vapor deposition (Plasma Enhanced CVD, PECVD), atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD, APCVD) and the like.

In addition to the deposition method, there are various deposition methods. In the present invention, the insulating film layer 2 may be formed using all known deposition methods.

At this time, the material that can be used as the insulating coating layer (2) is a material that is excellent in insulation performance and high thermal conductivity, and is not limited in kind. Examples of the most used material include Al 2 O 3 , SiO 2, or sapphire.

When the insulating coating layer 2 is formed by using the deposition method as described above, a significantly thin insulating layer can be formed, so that the heat dissipation efficiency is improved compared to the conventional technology of attaching and insulating a separate insulating substrate, and the overall thickness of the product is improved. Thinner

In the following description, formation of the circuit wiring pattern layer 3 is formed on the insulating coating layer 3 by using an evaporation method. Thereafter, the circuit wiring pattern layer 3 is formed by a wet etching method or a dry etching method.

In this case, the material forming the electrically conductive layer is a material having excellent electrical conductivity and high thermal conductivity.

When the circuit wiring pattern layer 3 is formed by a deposition method, a circuit pattern can be directly formed on the insulating coating layer 2 without a separate printed circuit board, and the thickness thereof is thin to improve heat dissipation efficiency and The overall thickness becomes thinner.

Thereafter, at least one LED chip 4 is directly mounted on the circuit wiring pattern to complete the package.

At this time, the process of encapsulating the LED or the process of inserting the diffusion plate is a conventional process, so a detailed description thereof is omitted.

As such, the present invention can form the PCB insulation layer and the circuit wiring pattern layer which are the most disturbing on the path through which heat is released by using a deposition method. This has the effect of being improved.

In the meantime, the insulating film layer 2 may be formed by anodizing the heat sink 1 rather than the deposition method, or may be formed by thermal spraying. Anodizing can also be formed directly on the heat sink, the thickness can be formed a thinner insulating film layer (2) of several microns to several tens of microns thick to improve heat dissipation efficiency.

In addition to the vapor deposition method, the circuit wiring pattern layer 3 may also be formed by bonding a sheet of metal using an adhesive member or by forming a metal layer through a plating process and selectively nicking a part of the metal layer. .

Since the circuit wiring pattern layer 3 is formed on the thinly formed insulating coating layer 2, the heat transfer to the heat sink is faster than in the prior art, so that the heat dissipation efficiency is improved.

In addition, the LED chip 4 may be mounted directly on the circuit wiring pattern layer 3, the LED chip configured without a separate sub-mount in addition to the ordinary LED chip. In this way, the heat generated when the LED is driven is transferred directly to the heat sink rather than through the submount and the PCB substrate as in the prior art, thereby improving the heat dissipation effect.

In addition, the structure of the present invention as described above can be mounted on any LED chip regardless of the type of the LED chip.

In particular, in the case of a high-brightness lighting device that needs to use a plurality of LEDs, as shown in the present invention, when a plurality of LEDs are directly mounted on a metal heat sink in a chip state and packaged, the integration as well as the heat dissipation effect can be increased.

1 is a cross-sectional view of the chip showing the structure of a conventional LED package.

2A and 2B are diagrams illustrating an LED package having a high heat dissipation substrate according to a preferred embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

1: heat sink 2: insulating film layer

3: circuit wiring pattern layer 4: LED chip

Claims (3)

In the LED package, A heat sink; An insulating coating layer formed on the heat sink by a deposition method, a spray coating method or an anodizing method; A circuit wiring pattern layer formed on the insulating coating layer; An LED package having a high heat dissipation substrate, characterized in that composed of at least one LED chip mounted directly on the circuit wiring pattern layer. The method of claim 1, The circuit wiring pattern layer, It is formed using a deposition method, a spray coating method or an anodizing method, The LED package having a high heat dissipation substrate, characterized in that for bonding the metal sheet on the insulating film layer using an adhesive member or by forming a metal layer by a plating process and selectively nicking the metal layer. The method according to claim 1 or 2, The insulation film layer is an LED package having a high heat dissipation substrate, characterized in that the material having excellent insulation performance and high thermal conductivity.
KR1020080117074A 2008-11-24 2008-11-24 Led package having a high performance radiator KR20100058316A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020080117074A KR20100058316A (en) 2008-11-24 2008-11-24 Led package having a high performance radiator
PCT/KR2009/006929 WO2010059013A2 (en) 2008-11-24 2009-11-24 Led package furnished with substrate of high heat radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080117074A KR20100058316A (en) 2008-11-24 2008-11-24 Led package having a high performance radiator

Publications (1)

Publication Number Publication Date
KR20100058316A true KR20100058316A (en) 2010-06-03

Family

ID=42359983

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080117074A KR20100058316A (en) 2008-11-24 2008-11-24 Led package having a high performance radiator

Country Status (1)

Country Link
KR (1) KR20100058316A (en)

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Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150827

Effective date: 20160624

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