WO2010059013A2 - Led package furnished with substrate of high heat radiation - Google Patents

Led package furnished with substrate of high heat radiation Download PDF

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Publication number
WO2010059013A2
WO2010059013A2 PCT/KR2009/006929 KR2009006929W WO2010059013A2 WO 2010059013 A2 WO2010059013 A2 WO 2010059013A2 KR 2009006929 W KR2009006929 W KR 2009006929W WO 2010059013 A2 WO2010059013 A2 WO 2010059013A2
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WO
WIPO (PCT)
Prior art keywords
heat dissipation
high heat
led package
dissipation substrate
led
Prior art date
Application number
PCT/KR2009/006929
Other languages
French (fr)
Korean (ko)
Other versions
WO2010059013A3 (en
Inventor
김덕용
Original Assignee
주식회사 케이엠더블유
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080117074A external-priority patent/KR20100058316A/en
Priority claimed from KR1020080125728A external-priority patent/KR101517930B1/en
Application filed by 주식회사 케이엠더블유 filed Critical 주식회사 케이엠더블유
Publication of WO2010059013A2 publication Critical patent/WO2010059013A2/en
Publication of WO2010059013A3 publication Critical patent/WO2010059013A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to an LED package, and more particularly, to an LED package having a high heat dissipation substrate for efficiently dissipating heat generated when the LED is driven.
  • a light emitting diode that is, an LED
  • a light emitting diode refers to a device that receives an electrical signal and outputs the light as light, and forms a molding unit for mounting the light emitting chip on a printed circuit board on which an electrode for receiving the electrical signal is formed and then sealing the light emitting chip. To prepare.
  • the brightness of the LED is proportional to the current applied to the light emitting chip. Therefore, in order to brighten the erection of the LED, high current must be applied, but since the heat emitted from the light emitting chip is also proportional to the current applied to the light emitting chip, when the high current is applied, the LED is damaged due to the heat radiating in proportion to the LED. A problem arises in which an electric current cannot be applied.
  • the PCB substrate 6 having the circuit pattern formed thereon is bonded on the metal heat sink 5, the LED chip 7 is mounted thereon, and then the electrode is connected to the wire 8. It is a structure to connect.
  • the LED chip is usually formed in one piece up to a submount.
  • the conventional LED parity structure has to pass through the thick insulating layer of the sub-mount and PCB substrate in the transfer process from the light emitting chip to the heat sink, so that effective heat dissipation is not achieved.
  • the thickness of the product becomes thicker because it must include both a reflector for condensing light at an angle and a diffusion plate for diffusing the condensed light, although not shown in the drawing. There was a problem of increasing the thickness of the product.
  • the LED device packaged as a light source is used. Since the LED device emits only light within a predetermined angle by using a side cup-shaped reflector in the packaging process, there is a problem in that light in all directions cannot be used.
  • the present invention provides an LED package having a high heat dissipation substrate capable of improving heat dissipation characteristics and reducing product thickness by forming an insulating film layer or a circuit wiring pattern having good insulation performance and thin thickness by using a deposition method.
  • the present invention provides an LED package having a high heat dissipation substrate capable of improving heat dissipation characteristics and reducing product thickness by forming an insulating film layer having good insulation performance and thin thickness by treating the heat sink by an anodizing method.
  • Another problem to be solved by the present invention is to provide an LED package having a high heat dissipation substrate that can reduce the product thickness by forming a thinner circuit wiring pattern layer, the heat dissipation effect is improved.
  • Another object of the present invention is to provide an LED package having a high heat dissipation substrate which can simplify the structure by simultaneously performing a light guiding function for uniformly distributing light and a diffusing function for diffusing light. In providing.
  • Another problem to be solved by the present invention is an LED package having a high heat dissipation substrate that can utilize light in almost all directions emitted by placing the unpacked LED chip on the protruding heat sink and positioned in the diffuser plate In providing.
  • another object of the present invention is to solve the problem, without the use of a cup-shaped reflecting plate for condensing light, a plurality of LED chips can be mounted on the heat sink, the LED having a high heat dissipation substrate that can improve the degree of integration In providing the package.
  • the present invention for solving the above problems, a heat sink, an insulating film layer formed on the upper portion of the heat sink, a circuit wiring pattern layer formed on the insulating film layer, and at least one mounted directly on the circuit wiring pattern layer It includes a high heat dissipation substrate including the above LED chip.
  • the present invention by using a deposition method, a spray coating method or an anodizing method on the top of the heat sink to form an insulating film having excellent insulation performance, thin thickness, excellent thermal conductivity, thereby improving the heat radiation efficiency of the LED chip have.
  • the present invention after forming an electrically conductive layer by a deposition method, a spray coating method or a method of bonding a metal sheet on the insulating film layer, by using an etching process to form a thin circuit wiring pattern layer, the thickness of the product Reduce heat dissipation efficiency is improved.
  • the present invention provides a light guide function and the light guide function to uniformly distribute the light by providing a non-packaged LED chip in the diffuser plate and having a diffusion means for reflecting light emitted to the upper side of the LED chip on the upper side of the LED chip By simultaneously dispersing the diffusion function, a separate assurance sheet is not required or the number thereof can be reduced, thereby reducing the thickness and manufacturing cost of the product.
  • the present invention has an effect that can utilize the light emitted in almost all directions emitted from the LED chip by mounting the LED chip directly to the protrusion of the heat sink.
  • the present invention can be mounted on a plurality of LED chips on the heat sink without using a cup-shaped reflector for collecting light, there is an effect that can improve the degree of integration.
  • 1 is a cross-sectional view of the chip showing the structure of a conventional LED package.
  • FIG. 2 and 3 is a block diagram of the LED package having a high heat radiation substrate according to an embodiment of the present invention.
  • FIG. 4 is a block diagram of an LED package having a high heat radiation substrate according to another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of another embodiment of the diffusion plate and diffusion means in FIG.
  • FIG. 6 is a cross-sectional view of another embodiment of the diffusion plate and the diffusion means in FIG.
  • FIG. 7 is a block diagram of an LED package having a high heat radiation substrate according to another embodiment of the present invention.
  • FIG 8 and 9 are cross-sectional views of the LED package having a high heat dissipation substrate according to another embodiment of the present invention.
  • heat sink 2 insulating film layer
  • circuit wiring pattern layer 4 LED chip
  • FIG. 2 and 3 is a structural diagram of the LED package having a high heat radiation substrate according to an embodiment of the present invention.
  • the LED package having a high heat radiation substrate according to an embodiment of the present invention
  • a heat sink 1 A heat sink 1;
  • the LED chip 4 is connected to the electrode terminal of the circuit wiring pattern layer 3.
  • an LED package requires a heat sink for heat dissipation, a circuit wiring pattern layer for supplying power to the LED, an LED connected to the circuit wiring pattern layer, and an insulating layer for insulation between the circuit wiring pattern layer and the heat sink.
  • the material having a low thermal conductivity on the path through which heat is released or the thicker the thickness the lower the thermal conductivity.
  • the gist of the present invention is to significantly reduce the thickness of the insulating layer and the circuit wiring pattern layer which are the most disturbing on the path through which heat is released.
  • This heat sink 1 has a high thermal conductivity, and is not limited to metals and nonmetals.
  • the insulating film layer 2 is formed on the heat sink 1 by using a deposition method.
  • the deposition methods include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).
  • PVD Physical vapor deposition
  • evaporation deposition using vapor of metal includes evaporation deposition using vapor of metal, sputtering deposition, which is a method of physically impacting a material.
  • Chemical vapor deposition includes low pressure chemical vapor deposition (Low Pressure CVD, LPCVD), plasma enhanced chemical vapor deposition (Plasma Enhanced CVD, PECVD), atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD, APCVD) and the like.
  • the insulating film layer 2 may be formed using all known deposition methods.
  • the material that can be used as the insulating coating layer (2) is a material having excellent insulation performance and high thermal conductivity, and is not limited in kind. Examples of the most used materials include Al 2 O 3 , SiO 2, or sapphire.
  • the insulating coating layer 2 is formed by using the deposition method as described above, a significantly thin insulating layer can be formed, so that the heat dissipation efficiency is improved compared to the conventional technology of attaching and insulating a separate insulating substrate, and the overall thickness of the product is improved. Thinner
  • circuit wiring pattern layer 3 An electrically conductive layer is also formed on the insulating film layer 3 using a deposition method. Thereafter, the circuit wiring pattern layer 3 is formed by a wet etching method or a dry etching method.
  • the material forming the electrically conductive layer is a material having excellent electrical conductivity and high thermal conductivity.
  • circuit wiring pattern layer 3 When the circuit wiring pattern layer 3 is formed by a deposition method, a circuit pattern can be directly formed on the insulating film layer 2 without a separate printed circuit board, and the thickness thereof is thin, thereby improving heat dissipation efficiency and The overall thickness becomes thinner.
  • At least one LED chip 4 is directly mounted on the circuit wiring pattern to complete the package.
  • the process of encapsulating the LED or the process of inserting the diffusion plate is a conventional process, and thus a detailed description thereof is omitted.
  • the present invention can form the PCB insulation layer and the circuit wiring pattern layer which are the most disturbing on the path through which heat is released by using a deposition method. This has the effect of being improved.
  • the insulating film layer 2 may be formed by anodizing the heat sink 1 rather than the deposition method, or may be formed by thermal spraying. Anodizing can also be formed directly on the heat sink, the thickness can be formed a thinner insulating film layer (2) of several microns to several tens of microns thick to improve heat dissipation efficiency.
  • the circuit wiring pattern layer 3 may also be formed by bonding a sheet of metal using an adhesive member or by forming a metal layer through a plating process, and selectively nicking a part of the metal layer. .
  • the circuit wiring pattern layer 3 as described above is formed on the thinly formed insulating coating layer 2, the heat transfer to the heat sink is faster than in the prior art, thereby improving heat dissipation efficiency.
  • the LED chip 4 may be directly mounted on the circuit wiring pattern layer 3 without an additional submount. In this way, the heat generated when the LED is driven is transferred directly to the heat sink rather than through the submount and the PCB substrate as in the prior art, thereby improving the heat dissipation effect.
  • the structure of the present invention as described above can be mounted on any LED chip regardless of the type of LED chip.
  • FIG. 4 is a cross-sectional view of another embodiment of an LED package having a high heat dissipation substrate according to the present invention.
  • An LED chip 140 mounted on the insulating film layer 120 or the heat sink 110 and electrically connected to the circuit wiring pattern layer 130;
  • a diffusion plate 150 positioned on an upper front surface of the structure and having an insertion space 151 into which the LED chip 140 is inserted, and diffusing the light emitted from the LED chip 140 to surface-emit light;
  • Located on the upper portion of the insertion space 151 of the diffusion plate 150 is configured to include a reflecting member 160 for reflecting the light emitted from the upper surface of the LED chip 140.
  • the insertion space 151 is filled with a filler for diffusing light.
  • the heat sink 110 may be a metal or non-metal having excellent thermal conductivity, and forms a thin insulating film layer 120 by the deposition method on the heat sink 110.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD Atomic Layer Deposition
  • PVD physical vapor deposition
  • Chemical vapor deposition includes low pressure chemical vapor deposition (Low Pressure CVD, LPCVD), plasma enhanced chemical vapor deposition (Plasma Enhanced CVD, PECVD), atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD, APCVD) and the like.
  • the insulating film layer 120 may be formed using all known deposition methods.
  • the material that can be used as the insulating film layer 120 is a material having excellent insulation performance and high thermal conductivity, and is not limited in kind. Examples of the most used materials include Al 2 O 3, SiO 2, or sapphire.
  • the insulating film layer 120 is formed by using the deposition method as described above, since a significantly thin insulating layer can be formed, the heat dissipation efficiency is improved as compared with the conventional technology using a separate insulating substrate or a PCB substrate. The overall thickness becomes thinner.
  • the insulating coating layer 120 may be formed by a thermal spraying method or an anodizing treatment instead of the deposition method as described above.
  • the micro insulation unit 120 may be formed.
  • the conductive layer is also formed on the insulating layer 120 by using a deposition method. Thereafter, the circuit wiring pattern layer 130 is formed by a wet etching method or a dry etching method.
  • the material for forming the circuit wiring pattern layer 130 As the material for forming the circuit wiring pattern layer 130, a material having excellent electrical conductivity and high thermal conductivity is given priority.
  • One example is silver, copper, aluminum, and the like.
  • the circuit wiring pattern layer 130 may also be formed through an etching process after forming an electrically conductive layer by a spray coating method in addition to a deposition method, and attaching a metal sheet to the insulating film layer using an adhesive member, or performing a plating process. After forming the metal layer through, a part of the metal layer may be selectively etched to form.
  • the LED chip 140 is directly mounted on the heat sink 110 exposed after selectively removing the insulating film 120 or the insulating film layer 120 exposed between the circuit wiring pattern layers 130. .
  • heat generated from the LED chip 140 is radiated through the thin insulating film layer 120 and the heat sink 110 or is directly discharged through the heat sink 110 to have high heat dissipation characteristics.
  • the LED chip 140 is die-bonded to the formed circuit wiring pattern layer 130 and electrically connected thereto.
  • the LED chip 140 is not directly mounted on the insulating film 120 or the heat dissipation plate 110, unlike the above description. Since it is a metal thin film having excellent thermal conductivity, it exhibits the same thermal conductivity as when directly mounted on the insulating film layer 120 or the heat sink 110.
  • the LED chip 140 is not directly die-bonded to the circuit wiring pattern layer 130 as described above, but is directly mounted to the upper portion of the heat sink 110 or the insulating coating layer 120, and then wire-bonded to the upper portion. It may be electrically connected to the circuit wiring pattern layer 130.
  • the diffusion plate 150 is provided on the bottom surface to provide the insertion space 151 into which the LED chip 140 can be inserted, and the LED chip 140 is inserted into the insertion space 151.
  • the diffusion plate 150 is attached to the circuit wiring pattern layer 130 so as to be inserted.
  • the insertion space 151 is filled with a filler that can diffuse the light.
  • the shape of the insertion space 151 is a cylindrical portion or a polyhedral space portion, if the structure can be inserted with the LED chip 140 and the wire can be used without limitation.
  • a conical reflective member 160 having a downward vertex is inserted.
  • the reflective member 160 Since the reflective member 160 has a greater amount of light emitted to the upper side of the LED chip 140, the reflective member 160 reflects the light emitted from the upper surface of the LED chip 140 to form the circuit wiring pattern layer 130 and the insulating film layer ( 120) to allow re-reflection to evenly diffuse the light to achieve a uniform surface emission.
  • the circuit wiring pattern layer 130 and the insulating coating layer 120 may also be used as a reflecting plate, but a separate reflecting plate may be formed at a portion where the circuit wiring pattern layer 130 and the diffusion plate 150 contact each other.
  • the reflector may be provided with a plurality of V patterns for even diffusion.
  • the reflecting member 160 which is a diffusion means for placing the LED chip 140 in the diffuser plate 150 and reflecting the light emitted on the upper side of the LED chip 140, the diffusion
  • the plate 150 By allowing the plate 150 to function as a light guide plate to uniformly distribute light and a diffusion function to diffuse light, it is possible to achieve brighter and more uniform surface light emission. Therefore, a separate diffusion sheet is not required or the number thereof can be reduced, thereby reducing the thickness and manufacturing cost of the LED package.
  • FIG. 5 is a cross-sectional configuration diagram of another embodiment of the diffusion plate 150 and the diffusion means.
  • an upper portion of the insertion space 151 of the diffusion plate 150 may have a step difference from the periphery so that the center thereof is lower, and an inclined surface that is the step surface may be directly used as a diffusion means.
  • the reflective layer 161, which is a diffusion means having a shape different from that of the embodiment of FIG. 2, may be formed on the inclined surface by deposition or coating.
  • the reflective layer 161 and the reflective member 160 may have a conical shape or a polygonal horn shape.
  • FIG. 6 is a cross-sectional view of another embodiment of the diffusion plate 150 and the diffusion means.
  • the upper surface corresponding to the upper portion of the insertion space 151 of the diffuser plate 150 is formed with a conical or polygonal horn shaped groove 152, and the lateral inclined surface of the groove 152 is formed.
  • the diffusing means the reflecting member 162 or the reflecting layer 163 may be formed on the part or the whole of the groove 152 by the vapor deposition or coating method as the diffusing means.
  • the reflective member 162 may be formed in a separate structure and attached to the groove 152.
  • the light emitted to the upper side of the LED chip 140 is diffused to the peripheral portion so that uniform surface emission can be achieved.
  • the present invention can mount a plurality of LED chips on the insulating film layer in a state in which the insulating film layer is formed on the top of the heat sink by a plurality of methods, and the LED chips can be packaged singly, and are emitted from the plurality of LED chips. Effective heat can be released.
  • FIG. 7 is a cross-sectional view of an LED package having a high heat dissipation substrate according to another embodiment of the present invention.
  • the LED package including the high heat dissipation substrate according to another embodiment of the present invention has a similar structure to that of the embodiment of the present invention described in detail with reference to FIG. 4, and the LED chip 140 is
  • the heat sink 110 of the portion to be mounted is formed higher than other portions.
  • FIG 8 and 9 are cross-sectional configuration diagram of the LED package having a high heat radiation substrate according to another embodiment of the present invention.
  • a heat sink 10 having a groove having an inclined side portion at an upper portion thereof
  • An LED chip 30 mounted on the center insulating film layer 11 of the inclined groove of the heat sink 10 and electrically connected to the circuit wiring pattern layer 20;
  • It comprises a diffusion plate 60 formed on the upper front surface of the structure.
  • the heat sink 10 is excellent in thermal conductivity, and maintains the gloss of the metal to use the excellent reflection efficiency.
  • aluminum can be used.
  • At least one groove is formed in an upper portion of the heat sink 10, and a side surface of the groove is inclined so that the light of the LED chip 30, which will be described later, is directly reflected from the inclined surface.
  • An insulating coating layer 11 is formed on the upper front surface of the heat sink 10.
  • the insulating layer 11 may be formed by deposition, anodizing or thermal spray coating of an insulating material, and an example of the material may be SiO 2 or Al 2 O 3 .
  • the insulating coating layer 11 having excellent thermal conductivity and insulating properties.
  • the circuit wiring pattern layer 20 is formed on the insulating coating layer 11.
  • the circuit wiring pattern layer 20 may be formed by selective etching after deposition, plating, or thermal spray coating, or by attaching a metal sheet.
  • the circuit wiring pattern layer 20 may be formed up to an inclined surface that is a side surface of the groove of the heat sink 10, or may be formed on a planar portion except for the groove.
  • circuit wiring pattern layer 20 also maintains the gloss of the metal to use a high reflection efficiency of light.
  • the LED chip 30 is mounted on the insulating film layer 11 at the center of the groove of the heat sink 10, and the LED chip 30 and the formed circuit wiring pattern layer 20 are electrically connected to each other.
  • connection method wire bonding is performed using wires as shown in FIG. 9, or the circuit wiring pattern layer 20 is formed to the periphery of the bottom surface of the groove of the heat sink 10, and then the LED chip ( 30) can be formed by direct die bonding.
  • the LED chip 30 may use a conventional LED chip, and may use an LED chip without submounts.
  • the LED chip 30 Since the LED chip 30 is directly mounted on the insulating film layer 11 on the heat sink 10, it is easier to dissipate heat generated from the LED chip 30, and thus, a substrate such as a PCB is used.
  • the heat dissipation efficiency is higher than that of the heat dissipation substrate, and the life of the LED chip package can be improved by preventing the degradation of the LED chip.
  • the filler 50 and the diffusion plate 60 provide a structure capable of surface emission through the protection of the LED chip 30 and the diffusion of light.
  • the present invention relates to an LED package having a high heat dissipation substrate which can increase the heat dissipation efficiency of the LED package to prevent shortening the service life of the LED, reduce the thickness of the LED package, and have excellent surface light emitting efficiency. have.

Abstract

The present invention relates to an LED package substrate that includes a substrate of high heat radiation comprising a heat radiation plate, an insulation skin layer that is formed on top of said heat radiation plate, a circuit wiring pattern layer that is formed over said insulation skin layer, and at least one LED chip that is directly mounted on said circuit wiring pattern layer. The present invention, thus configured, has the effect of enabling the formation of an insulation skin layer with good insulation performance and low thickness. As a result, it has the effect of improving heat radiation efficiency. In addition, the present invention has the effect of enabling the formation of a thinner circuit wiring pattern by forming a thinner conduction layer over said insulation skin layer using a vapor deposition method and by forming a circuit wiring pattern layer using an etching method, and thus has the effect of improving the efficiency of heat radiation.

Description

고방열기판을 구비한 엘이디 패키지LED package with high heat dissipation board
본 발명은 엘이디 패키지에 관한 것으로, 보다 상세하게는 엘이디 구동시 발생하는 열을 효율적으로 방열시키기 위한 고방열기판을 구비한 엘이디 패키지에 관한 것이다.The present invention relates to an LED package, and more particularly, to an LED package having a high heat dissipation substrate for efficiently dissipating heat generated when the LED is driven.
일반적으로 발광다이오드 즉, 엘이디는 전기적 신호를 받아 이를 광으로 출력하는 장치를 지칭하는 것으로, 전기적 신호를 입력받는 전극이 형성된 인쇄회로 기판상에 발광칩을 실장한 다음 발광칩을 봉지하는 몰딩부를 형성하여 제조한다.Generally, a light emitting diode, that is, an LED, refers to a device that receives an electrical signal and outputs the light as light, and forms a molding unit for mounting the light emitting chip on a printed circuit board on which an electrode for receiving the electrical signal is formed and then sealing the light emitting chip. To prepare.
상기 엘이디의 밝기는 발광칩에 인가되는 전류에 비례한다. 따라서 엘이디의 발기를 밝게 하기 위해서는 고전류를 인가하여야 하지만 발광칩이 발산하는 열은 역시 발광칩에 인가되는 전류에 비례하기 때문에 고전류를 인가하면 그에 비례하여 발산하는 열로 인해 엘이디가 손상을 받게 되어 무한정 높은 전류를 인가할 수 없는 문제가 발생한다.The brightness of the LED is proportional to the current applied to the light emitting chip. Therefore, in order to brighten the erection of the LED, high current must be applied, but since the heat emitted from the light emitting chip is also proportional to the current applied to the light emitting chip, when the high current is applied, the LED is damaged due to the heat radiating in proportion to the LED. A problem arises in which an electric current cannot be applied.
이에 발광칩이 발산하는 열을 줄이기 위한 많은 연구들이 수행되고 있다.Accordingly, many studies have been conducted to reduce heat generated by light emitting chips.
그러나 종래의 엘이디 패키지 구조는 도 1에 도시된 바와 같이 금속 방열판(5)위에 회로 패턴이 형성된 PCB 기판(6)을 접착하고 그 위에 엘이디칩(7)을 실장한 다음 와이어(8)로 전극을 연결하는 구조이다. However, in the conventional LED package structure, as shown in FIG. 1, the PCB substrate 6 having the circuit pattern formed thereon is bonded on the metal heat sink 5, the LED chip 7 is mounted thereon, and then the electrode is connected to the wire 8. It is a structure to connect.
이때, 상기 엘이디칩은 통상 서브마운트까지 일체형으로 구성되어 있다.In this case, the LED chip is usually formed in one piece up to a submount.
일반적으로 열이 방출되는 경로상에 열전도도가 낮은 물질이 있거나 그 두께가 두꺼울 수록 열전도율은 떨어지게 된다.In general, the lower the thermal conductivity or the thicker the material, the lower the thermal conductivity.
그런데 종래 엘이디 패티지 구조는 발광칩으로부터 방열판까지의 전달과정에서 서브마운트와 PCB 기판이라는 두꺼운 절연층을 통과해야 하기 때문에 효과적인 열방출이 이루어 지지 않고 있다.By the way, the conventional LED parity structure has to pass through the thick insulating layer of the sub-mount and PCB substrate in the transfer process from the light emitting chip to the heat sink, so that effective heat dissipation is not achieved.
또한 일반적으로 싱글 패키지 하는 구조가 대부분이기 때문에 다수의 엘이디칩을 멀티 패키징하기에는 어려운점이 있었다.In addition, it is difficult to multi-package multiple LED chips because the structure is generally single-packaged.
또한 광을 일정각도로 집광하기 위한 반사판 및 도면에 도시되지는 않았지만 집광된 광을 확산시키는 확산판을 모두 구비하여야 하기 때문에 제품의 두께가 두꺼워지며, 이는 박형의 디스플레이 제품에 백라이트로 적용할 때 전체 제품의 두께를 증가시키는 문제점이 있었다.In addition, the thickness of the product becomes thicker because it must include both a reflector for condensing light at an angle and a diffusion plate for diffusing the condensed light, although not shown in the drawing. There was a problem of increasing the thickness of the product.
그리고 종래 엘이디 패키지는 다수 개의 엘이디를 집적해야 하는 경우, 일반적으로 싱글 패키지된 엘이디 소자를 이용하기 때문에 집적도를 높이는 한계가 있는 문제점이 있었다.In the conventional LED package, when a plurality of LEDs are to be integrated, there is a problem in that the integration degree is increased because a single packaged LED device is generally used.
또한 광원으로 패키징된 LED 소자를 이용하고 있는데, 이 LED소자는 패키징 과정에서 측면 컵형상의 반사판을 이용하여 일정각도 이내의 광만을 방출되도록 하기 때문에 모든 방향의 광을 사용할 수 없는 문제점이 있었다.In addition, the LED device packaged as a light source is used. Since the LED device emits only light within a predetermined angle by using a side cup-shaped reflector in the packaging process, there is a problem in that light in all directions cannot be used.
상기와 같은 문제점을 감안한 본 발명이 해결하고자 하는 과제는, The problem to be solved by the present invention in view of the above problems,
증착방법을 이용하여 절연성능은 좋고 두께는 얇은 절연피막층 또는 회로 배선패턴을 형성함으로써 방열특성 개선 및 제품두께를 줄일 수 있는 고방열기판을 구비한 엘이디 패키지를 제공하는데 있다.The present invention provides an LED package having a high heat dissipation substrate capable of improving heat dissipation characteristics and reducing product thickness by forming an insulating film layer or a circuit wiring pattern having good insulation performance and thin thickness by using a deposition method.
그리고 본 발명은 방열판을 아노다이징 방법으로 처리함으로써 절연성능은 좋고 두께는 얇은 절연피막층을 형성함으로써 방열특성 개선 및 제품두께를 줄일 수 있는 고방열기판을 구비한 엘이디 패키지를 제공하는데 있다.In addition, the present invention provides an LED package having a high heat dissipation substrate capable of improving heat dissipation characteristics and reducing product thickness by forming an insulating film layer having good insulation performance and thin thickness by treating the heat sink by an anodizing method.
또한 본 발명이 해결하고자 하는 다른 과제는 회로배선패턴층을 보다 얇게 형성함으로써 제품두께를 줄일 수 있고, 방열효과가 개선되는 고방열기판을 구비한 엘이디 패키지를 제공하는데 있다.In addition, another problem to be solved by the present invention is to provide an LED package having a high heat dissipation substrate that can reduce the product thickness by forming a thinner circuit wiring pattern layer, the heat dissipation effect is improved.
그리고 본 발명이 해결하고자 하는 또 다른 과제는, 확산판을 빛을 균일하게 분포시키는 도광기능과 빛을 확산시키는 확산기능을 동시에 수행하도록 하여 구조를 단순화할 수 있는 고방열기판을 구비한 엘이디 패키지를 제공함에 있다.Another object of the present invention is to provide an LED package having a high heat dissipation substrate which can simplify the structure by simultaneously performing a light guiding function for uniformly distributing light and a diffusing function for diffusing light. In providing.
또한 본 발명이 해결하고자 하는 또 다른 과제는, 패키징되지 않은 엘이디칩이 돌출된 방열판위에 실장되게 하고 확산판내에 위치되게 함으로서 발광되는 거의 모든 방향의 빛을 활용할 수 있는 고방열기판을 구비한 엘이디 패키지를 제공함에 있다.In addition, another problem to be solved by the present invention is an LED package having a high heat dissipation substrate that can utilize light in almost all directions emitted by placing the unpacked LED chip on the protruding heat sink and positioned in the diffuser plate In providing.
아울러 본 발명이 해결하고자 하는 또 다른 과제는, 광을 집광시키는 컵 형상의 반사판을 이용하지 않고, 방열판에 다수 개의 엘이디칩을 실장할 수 있어, 집적도를 향상시킬 수 있는 고방열기판을 구비한 엘이디 패키지를 제공함에 있다.In addition, another object of the present invention is to solve the problem, without the use of a cup-shaped reflecting plate for condensing light, a plurality of LED chips can be mounted on the heat sink, the LED having a high heat dissipation substrate that can improve the degree of integration In providing the package.
상기와 같은 과제를 해결하기 위한 본 발명은, 방열판과, 상기 방열판의 상부에 형성되는 절연피막층과, 상기 절연피막층위에 형성하는 회로배선패턴층과, 상기 회로배선패턴층에 직접 실장되는 적어도 한 개 이상의 엘이디칩을 포함하는 고방열기판을 포함한다.The present invention for solving the above problems, a heat sink, an insulating film layer formed on the upper portion of the heat sink, a circuit wiring pattern layer formed on the insulating film layer, and at least one mounted directly on the circuit wiring pattern layer It includes a high heat dissipation substrate including the above LED chip.
본 발명은 방열판의 상부에 증착방법, 용사코팅방법 또는 아노다이징 방법을 이용하여 절연성능이 우수하며, 두께가 얇고, 열전도율이 우수한 절연피막을 형성함으로써, 엘이디칩의 방열 효율을 향상시킬 수 있는 효과가 있다.The present invention by using a deposition method, a spray coating method or an anodizing method on the top of the heat sink to form an insulating film having excellent insulation performance, thin thickness, excellent thermal conductivity, thereby improving the heat radiation efficiency of the LED chip have.
또한 본 발명은 상기 절연피막층위에 증착방법, 용사코팅방법 또는 금속시트를 접착하는 방법으로 전기전도층을 형성한 후, 에칭공정을 이용하여 그 두께가 얇은 회로배선패턴층을 형성하여, 제품의 두께를 줄이며 방열효율이 개선되는 효과가 있다.In addition, the present invention after forming an electrically conductive layer by a deposition method, a spray coating method or a method of bonding a metal sheet on the insulating film layer, by using an etching process to form a thin circuit wiring pattern layer, the thickness of the product Reduce heat dissipation efficiency is improved.
또한 본 발명은 패키징되지 않은 LED 칩이 확산판내에 위치되게 하고 LED 칩의 상측에 LED 칩의 상부측으로 발광되는 빛을 반사시키기 위한 확산수단을 구비함으로써 확산판이 광을 균일하게 분포시키는 도광기능과 광을 확산시키는 확산기능을 동시에 하도록 함으로써 별도의 확신시트가 필요없거나 또는 그 수를 줄일 수 있어 제품의 두께 및 제조비용을 줄일 수 있는 효과가 있다.In addition, the present invention provides a light guide function and the light guide function to uniformly distribute the light by providing a non-packaged LED chip in the diffuser plate and having a diffusion means for reflecting light emitted to the upper side of the LED chip on the upper side of the LED chip By simultaneously dispersing the diffusion function, a separate assurance sheet is not required or the number thereof can be reduced, thereby reducing the thickness and manufacturing cost of the product.
또한 본 발명은 방열판의 돌출부에 엘이디칩을 직접 실장시킴으로써 엘이디칩에서 발광되는 거의 모든 방향으로 방출되는 광을 활용할 수 있는 효과가 있다.In addition, the present invention has an effect that can utilize the light emitted in almost all directions emitted from the LED chip by mounting the LED chip directly to the protrusion of the heat sink.
또한 본 발명은 빛을 집광시키는 컵 형상의 반사판을 이용하지 않고, 방열판에 다수 개의 엘이디칩을 실장할 수 있어, 집적도를 향상시킬 수 있는 효과가 있다.In addition, the present invention can be mounted on a plurality of LED chips on the heat sink without using a cup-shaped reflector for collecting light, there is an effect that can improve the degree of integration.
도 1은 종래의 엘이디 패키지의 구조를 나타낸 칩 단면도.1 is a cross-sectional view of the chip showing the structure of a conventional LED package.
도 2 및 도 3은 본 발명의 일실시예에 따른 고방열기판을 구비한 엘이디 패키지의 구성도이다.2 and 3 is a block diagram of the LED package having a high heat radiation substrate according to an embodiment of the present invention.
도 4는 본 발명의 다른 실시예에 따른 고방열기판을 구비한 엘이디 패키지의 구성도이다.4 is a block diagram of an LED package having a high heat radiation substrate according to another embodiment of the present invention.
도 5는 도 4에서 확산판과 확산수단의 다른 실시예의 단면도이다.5 is a cross-sectional view of another embodiment of the diffusion plate and diffusion means in FIG.
도 6은 도 4에서 확산판과 확산수단의 또 다른 실시예의 단면도이다.6 is a cross-sectional view of another embodiment of the diffusion plate and the diffusion means in FIG.
도 7은 본 발명의 다른 실시예에 따른 고방열기판을 구비한 엘이디 패키지의 구성도이다.7 is a block diagram of an LED package having a high heat radiation substrate according to another embodiment of the present invention.
도 8과 도 9는 본 발명의 다른 실시예에 따른 고방열 기판을 구비한 엘이디 패키지의 단면도이다.8 and 9 are cross-sectional views of the LED package having a high heat dissipation substrate according to another embodiment of the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
1:방열판 2:절연피막층1: heat sink 2: insulating film layer
3:회로배선패턴층 4:엘이디칩3: circuit wiring pattern layer 4: LED chip
10,110:방열판 11,120:절연피막층10,110: heat sink 11,120: insulating film layer
20,130:회로배선패턴층 30,140:엘이디칩20,130: circuit wiring pattern layer 30,140: LED chip
50:충진제 60,150:확산판50: filler 60,150: diffusion plate
160:반사부재160: reflecting member
상기와 같은 본 발명의 다양한 실시예들을 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2와 도 3은 본 발명의 일실시예에 따른 고방열기판을 구비한 엘이디 패키지의 구조도이다.2 and 3 is a structural diagram of the LED package having a high heat radiation substrate according to an embodiment of the present invention.
도 2 및 도 3을 를 참조하면 본 발명의 일실시예에 따른 고방열기판을 구비한 엘이디 패키지는,2 and 3, the LED package having a high heat radiation substrate according to an embodiment of the present invention,
방열판(1)과;A heat sink 1;
상기 방열판(1)에 증착방법으로 형성되는 절연피막층(2)과;An insulating coating layer (2) formed on the heat sink (1) by a deposition method;
상기 절연피막층위에 증착방법 및 에칭방법에 의해 형성되는 회로배선패턴층(3)과;A circuit wiring pattern layer (3) formed on the insulating film layer by a deposition method and an etching method;
상기 회로배선패턴층(3)의 전극단자에 연결되는 엘이디칩(4)으로 구성한다.The LED chip 4 is connected to the electrode terminal of the circuit wiring pattern layer 3.
이하, 구성에 대해 좀더 자세히 설명하면 다음과 같다.Hereinafter, the configuration in more detail as follows.
일반적으로 엘이디 패키지를 하기 위해서는 방열을 위한 방열판과, 엘이디에 전원공급을 위한 회로배선패턴층과, 회로배선패턴층에 연결되는 엘이디 그리고 상기 회로배선패턴층과 방열판 사이에 절연을 위한 절연층이 필요하다.In general, an LED package requires a heat sink for heat dissipation, a circuit wiring pattern layer for supplying power to the LED, an LED connected to the circuit wiring pattern layer, and an insulating layer for insulation between the circuit wiring pattern layer and the heat sink. Do.
이때, 열이 방출되는 경로상에 열전도도가 낮은 물질이 있거나 그 두께가 두꺼울수록 열전도율은 떨어지게 된다. At this time, the material having a low thermal conductivity on the path through which heat is released or the thicker the thickness, the lower the thermal conductivity.
따라서 본 발명의 요지는 열이 방출되는 경로상에 가장 방해가 되는 절연층 및 회로배선패턴층의 두께를 현저히 감소시키는데 있다.Therefore, the gist of the present invention is to significantly reduce the thickness of the insulating layer and the circuit wiring pattern layer which are the most disturbing on the path through which heat is released.
먼저, 방열판(1)을 구비한다. 이 방열판(1)은 열전도도가 높은 것을 우선으로 하며, 금속 및 비금속에 제한을 받지 아니한다.First, the heat sink 1 is provided. This heat sink 1 has a high thermal conductivity, and is not limited to metals and nonmetals.
그리고 상기 방열판(1)에 증착방법을 이용하여 절연피막층(2)을 형성한다.In addition, the insulating film layer 2 is formed on the heat sink 1 by using a deposition method.
상기 증착방법으로는 물리 기상 증착법(PVD), 화학 기상 증착법(CVD), Atomic Layer Deposition(ALD)이 있다. The deposition methods include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).
물리 기상 증착법(PVD)으로는 다시 금속의 증기를 사용하는 증발(evaporation) 증착법, 물질에 물리적인 충격을 주는 방법인 Sputtering 증착법 등이 있고Physical vapor deposition (PVD) includes evaporation deposition using vapor of metal, sputtering deposition, which is a method of physically impacting a material.
화학 기상 증착법(CVD)으로는 저압 화학 기상 증착 (Low Pressure CVD, LPCVD), 플라즈마 향상 화학 기상 증착 (Plasma Enhanced CVD, PECVD), 대기압 화학 기상 증착 (Atmospheric Pressure CVD, APCVD) 등이 있다.Chemical vapor deposition (CVD) includes low pressure chemical vapor deposition (Low Pressure CVD, LPCVD), plasma enhanced chemical vapor deposition (Plasma Enhanced CVD, PECVD), atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD, APCVD) and the like.
상기 증착법 이외에도 여러 가지 증착방법이 있는데, 본 발명에서는 기 알려진 증착방법을 모두 사용하여 절연피막층(2)을 형성할 수 있다.In addition to the deposition method, there are various deposition methods. In the present invention, the insulating film layer 2 may be formed using all known deposition methods.
이때, 절연피막층(2)으로 사용될 수 있는 물질은 절연성능이 우수하고 열전도도가 높은 물질을 우선으로 하며 그 종류에 제한을 받지 않는다. 가장 많이 사용되는 물질로서는 일예로서 Al2O3, SiO2 또는 사파이어 등이 있다.At this time, the material that can be used as the insulating coating layer (2) is a material having excellent insulation performance and high thermal conductivity, and is not limited in kind. Examples of the most used materials include Al 2 O 3 , SiO 2, or sapphire.
상기와 같이 증착방법을 이용하여 절연피막층(2)을 형성하면 현저히 얇은 절연층을 형성할 수 있기 때문에 별도의 절연기판을 구비하여 접착하는 종래 기술에 비해 방열효율이 개선되고, 제품의 전체 두께가 얇아진다.When the insulating coating layer 2 is formed by using the deposition method as described above, a significantly thin insulating layer can be formed, so that the heat dissipation efficiency is improved compared to the conventional technology of attaching and insulating a separate insulating substrate, and the overall thickness of the product is improved. Thinner
그리고 회로배선패턴층(3) 형성에 대해 설명하면, 상기 절연피막층(3)위에 역시 증착방법을 이용하여 전기전도층을 형성한다. 이후, 습식에칭 또는 건식에칭 등의 방법으로 회로배선패턴층(3)을 형성한다. Next, the formation of the circuit wiring pattern layer 3 will be described. An electrically conductive layer is also formed on the insulating film layer 3 using a deposition method. Thereafter, the circuit wiring pattern layer 3 is formed by a wet etching method or a dry etching method.
이때, 상기 전기전도층을 형성하는 물질로는 전기전도성이 우수하고 열전도도가 높은 물질을 우선으로 한다.In this case, the material forming the electrically conductive layer is a material having excellent electrical conductivity and high thermal conductivity.
상기 회로배선패턴층(3)을 증착방법으로 형성하게 되면 별도의 인쇄회로기판 없이 상기 절연피막층(2)에 직접 회로패턴을 형성할 수 있고, 그 두께가 얇아 열 방출효율이 개선되며 또한 제품의 전체 두께가 얇아지게 된다.When the circuit wiring pattern layer 3 is formed by a deposition method, a circuit pattern can be directly formed on the insulating film layer 2 without a separate printed circuit board, and the thickness thereof is thin, thereby improving heat dissipation efficiency and The overall thickness becomes thinner.
이후, 상기 엘이디칩(4)을 적어도 한 개 이상 상기 회로 배선패턴위에 직접 실장하여 패키지를 완료한다.Thereafter, at least one LED chip 4 is directly mounted on the circuit wiring pattern to complete the package.
이때, 상기 엘이디를 봉지하는 과정 또는 확산판을 삽입하는 과정 등은 통상의 과정이므로 자세한 설명은 생략하였다.In this case, the process of encapsulating the LED or the process of inserting the diffusion plate is a conventional process, and thus a detailed description thereof is omitted.
이와 같이 본 발명은 열이 방출되는 경로상에 가장 방해가 되는 PCB 절연층 및 회로배선패턴층을 증착방법을 이용하여 보다 얇게 형성할 수 있고, 별도의 접착제가 필요없이 직접 형성하도록 함으로서 열 방출효율이 개선되는 효과가 있다.As such, the present invention can form the PCB insulation layer and the circuit wiring pattern layer which are the most disturbing on the path through which heat is released by using a deposition method. This has the effect of being improved.
한편, 상기 절연피막층(2)을 증착방법이 아닌 상기 방열판(1)을 아노다이징 처리하여 절연피막층(2)을 형성할 수도 있고, 용사코팅(thermal spraying)으로 형성할 수도 있다. 아노다이징 역시 방열판에 직접 형성할 수 있고, 그 두께가 수미크론 ~ 수십 미크론 두께로 보다 얇은 절연피막층(2)을 형성할 수 있어 열 방출효율을 개선시킬 수 있다. In the meantime, the insulating film layer 2 may be formed by anodizing the heat sink 1 rather than the deposition method, or may be formed by thermal spraying. Anodizing can also be formed directly on the heat sink, the thickness can be formed a thinner insulating film layer (2) of several microns to several tens of microns thick to improve heat dissipation efficiency.
그리고 회로배선패턴층(3) 역시 증착방법 외에도 금속으로 된 시트를 접착부재를 이용하여 접착하거나, 또는 도금공정을 통하여 금속층을 형성한 후, 그 금속층의 일부를 선택적으로 애칭하여 형성할 수 도 있다.In addition to the vapor deposition method, the circuit wiring pattern layer 3 may also be formed by bonding a sheet of metal using an adhesive member or by forming a metal layer through a plating process, and selectively nicking a part of the metal layer. .
상기와 같은 회로배선패턴층(3)은 상기 얇게 형성된 절연피막층(2)위에 형성되기 때문에 종래 기술보다는 방열판으로의 열 전이가 신속하게 이루어져 방열효율이 좋아진다.Since the circuit wiring pattern layer 3 as described above is formed on the thinly formed insulating coating layer 2, the heat transfer to the heat sink is faster than in the prior art, thereby improving heat dissipation efficiency.
그리고 상기 엘이디칩(4)은 통상의 엘이디칩 이외에도 별도의 서브마운트 없이 구성된 엘이디칩을 상기 회로배선패턴층(3)에 직접 실장할 수도 있다. 이와 같이 실장하면 엘이디 구동시 발생하는 열이 종래에서처럼 서브마운트 및 PCB 기판을 통하지 않고 방열판에 직접 전달되기 때문에 방열효과가 개선된다.In addition to the conventional LED chip, the LED chip 4 may be directly mounted on the circuit wiring pattern layer 3 without an additional submount. In this way, the heat generated when the LED is driven is transferred directly to the heat sink rather than through the submount and the PCB substrate as in the prior art, thereby improving the heat dissipation effect.
또한 상기와 같은 본 발명의 구조는 엘이디칩의 종류에 상관없이 어떤 엘이디칩도 실장가능하다.In addition, the structure of the present invention as described above can be mounted on any LED chip regardless of the type of LED chip.
그리고 특히 다수 개의 엘이디를 이용해야 하는 고휘도 조명기기의 경우에는 본 발명에서와 같이 한 개의 금속 방열판에 다수 개의 엘이디를 칩 상태에서 직접 실장하여 패키지 하게 되면 방열효과 뿐만 아니라 집적도를 높일 수 있다.In particular, in the case of a high-brightness lighting device that needs to use a plurality of LEDs, as shown in the present invention, when a plurality of LEDs are directly mounted on a metal heat sink in a chip state and packaged, the integration as well as the heat dissipation effect can be increased.
도 4는 본 발명에 따른 고방열 기판을 구비하는 엘이디 패키지의 다른 실시예의 단면 구성도이다.4 is a cross-sectional view of another embodiment of an LED package having a high heat dissipation substrate according to the present invention.
도 4를 참조하면 본 발명에 따른 고방열 기판을 구비하는 엘이디 패키지의 다른 실시예는,Referring to Figure 4 another embodiment of the LED package having a high heat radiation substrate according to the present invention,
방열판(110)과, A heat sink 110,
상기 방열판(110)의 상부에 형성된 절연피막층(120)과, An insulation film layer 120 formed on the heat sink 110,
상기 절연피막층(120)의 상부일부에 형성된 회로배선패턴층(130)과, A circuit wiring pattern layer 130 formed on an upper portion of the insulating film layer 120,
상기 절연피막층(120) 또는 상기 방열판(110)의 상부에 실장되며, 상기 회로배선패턴층(130)과 전기적으로 연결되는 엘이디칩(140)과, An LED chip 140 mounted on the insulating film layer 120 or the heat sink 110 and electrically connected to the circuit wiring pattern layer 130;
상기 구조의 상부전면에 위치하며 상기 엘이디칩(140)이 삽입되는 삽입공간부(151)를 구비하여, 그 엘이디칩(140)으로부터 방출되는 광을 확산시켜 면발광시키는 확산판(150)과, A diffusion plate 150 positioned on an upper front surface of the structure and having an insertion space 151 into which the LED chip 140 is inserted, and diffusing the light emitted from the LED chip 140 to surface-emit light;
상기 확산판(150)의 삽입공간부(151)의 상부에 위치하여 상기 엘이디칩(140)의 상면에서 방출되는 광을 반사시키는 반사부재(160)를 포함하여 구성된다.Located on the upper portion of the insertion space 151 of the diffusion plate 150 is configured to include a reflecting member 160 for reflecting the light emitted from the upper surface of the LED chip 140.
도면에는 도시되지 않았지만 상기 삽입공간부(151)에는 광을 확산시키는 충진제가 충진된다.Although not shown in the drawing, the insertion space 151 is filled with a filler for diffusing light.
이하, 상기와 같이 구성되는 본 발명 엘이디 패키지의 구성과 작용을 보다 상세히 설명한다.Hereinafter, the configuration and operation of the LED package of the present invention configured as described above in more detail.
먼저, 상기 방열판(110)은 열전도도가 우수한 금속 또는 비금속을 사용할 수 있으며, 그 방열판(110)의 상부에 증착법으로 얇은 절연피막층(120)을 형성한다.First, the heat sink 110 may be a metal or non-metal having excellent thermal conductivity, and forms a thin insulating film layer 120 by the deposition method on the heat sink 110.
상기 절연피막층(120)의 형성을 위한 증착방법으로는, 물리 기상 증착법(PVD), 화학 기상 증착법(CVD), Atomic Layer Deposition(ALD)이 있다. As a deposition method for forming the insulating layer 120, physical vapor deposition (PVD), chemical vapor deposition (CVD), Atomic Layer Deposition (ALD).
물리 기상 증착법(PVD)으로는 다시 금속의 증기를 사용하는 증발(evaporation) 증착법, 물질에 물리적인 충격을 주는 방법인 스퍼터링(Sputtering) 증착법 등이 있고,Examples of physical vapor deposition (PVD) include evaporation deposition using vapor of metal, sputtering deposition, which is a method of physically impacting a material, and the like.
화학 기상 증착법(CVD)으로는 저압 화학 기상 증착 (Low Pressure CVD, LPCVD), 플라즈마 향상 화학 기상 증착 (Plasma Enhanced CVD, PECVD), 대기압 화학 기상 증착 (Atmospheric Pressure CVD, APCVD) 등이 있다.Chemical vapor deposition (CVD) includes low pressure chemical vapor deposition (Low Pressure CVD, LPCVD), plasma enhanced chemical vapor deposition (Plasma Enhanced CVD, PECVD), atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD, APCVD) and the like.
상기 증착법 이외에도 여러 가지 증착방법이 있는데, 본 발명에서는 기 알려진 증착방법을 모두 사용하여 상기 절연피막층(120)을 형성할 수 있다.In addition to the deposition method, there are various deposition methods. In the present invention, the insulating film layer 120 may be formed using all known deposition methods.
이때, 절연피막층(120)으로 사용될 수 있는 물질은 절연성능이 우수하고 열전도도가 높은 물질을 우선으로 하며 그 종류에 제한을 받지 않는다. 가장 많이 사용되는 물질의 일예로서 Al2O3, SiO2 또는 사파이어 등이 있다.At this time, the material that can be used as the insulating film layer 120 is a material having excellent insulation performance and high thermal conductivity, and is not limited in kind. Examples of the most used materials include Al 2 O 3, SiO 2, or sapphire.
상기와 같이 증착방법을 이용하여 절연피막층(120)을 형성하면 현저히 얇은 절연층을 형성할 수 있기 때문에 별도의 절연기판을 구비하여 접착하거나 PCB기판을 이용하는 종래 기술에 비해 방열효율이 개선되고, 제품의 전체 두께가 얇아진다.When the insulating film layer 120 is formed by using the deposition method as described above, since a significantly thin insulating layer can be formed, the heat dissipation efficiency is improved as compared with the conventional technology using a separate insulating substrate or a PCB substrate. The overall thickness becomes thinner.
상기 절연피막층(120)은 상기와 같은 증착방법이 아닌 용사코팅(thermal spraying) 방법 또는 아노다이징처리하여 형성할 수도 있다.The insulating coating layer 120 may be formed by a thermal spraying method or an anodizing treatment instead of the deposition method as described above.
이와 같이 증착방법, 용사코팅방법 또는 아노다이징 방법을 이용하면 미크론단위의 얇은 절연피막층(120)을 형성할 수 있다.As described above, when the deposition method, the spray coating method, or the anodizing method is used, the micro insulation unit 120 may be formed.
그리고 상기 절연피막층(120)위에 역시 증착방법을 이용하여 전기전도층을 형성한다. 이후, 습식에칭 또는 건식에칭 등의 방법으로 회로배선패턴층(130)을 형성한다.The conductive layer is also formed on the insulating layer 120 by using a deposition method. Thereafter, the circuit wiring pattern layer 130 is formed by a wet etching method or a dry etching method.
상기 회로배선패턴층(130)을 형성하는 물질로는 전기전도성이 우수하고 열전도도가 높은 물질을 우선으로 한다. 일예로서 은, 동, 알루미늄 등이 있다.As the material for forming the circuit wiring pattern layer 130, a material having excellent electrical conductivity and high thermal conductivity is given priority. One example is silver, copper, aluminum, and the like.
상기 회로배선패턴층(130) 역시 증착방법외에 용사코팅방법으로 전기전도층을 형성한 후 에칭공정을 통해 형성할 수도 있으며, 금속시트를 접착부재를 이용하여 상기 절연피막층위에 접착하거나, 도금공정을 통해 금속층을 형성한 후, 그 금속층의 일부를 선택적으로 에칭하여 형성할 수도 있다.The circuit wiring pattern layer 130 may also be formed through an etching process after forming an electrically conductive layer by a spray coating method in addition to a deposition method, and attaching a metal sheet to the insulating film layer using an adhesive member, or performing a plating process. After forming the metal layer through, a part of the metal layer may be selectively etched to form.
그 다음, 상기 엘이디칩(140)을 상기 회로배선패턴층(130)의 사이에 노출된 절연피막층(120) 또는 그 절연피막층(120)을 선택적으로 제거한 후 노출되는 방열판(110)에 직접 실장한다.Next, the LED chip 140 is directly mounted on the heat sink 110 exposed after selectively removing the insulating film 120 or the insulating film layer 120 exposed between the circuit wiring pattern layers 130. .
따라서 본 발명은 상기 엘이디칩(140)에서 발생하는 열이 얇은 절연피막층(120)과 방열판(110)을 통해 방열되거나, 그 방열판(110)을 통해 직접 방출되기 때문에 고방열 특성을 가지게 된다.Therefore, in the present invention, heat generated from the LED chip 140 is radiated through the thin insulating film layer 120 and the heat sink 110 or is directly discharged through the heat sink 110 to have high heat dissipation characteristics.
그 다음, 상기 엘이디칩(140)을 상기 형성한 회로배선패턴층(130)에 다이본딩하여 전기적으로 연결한다. 상기와 같이 다이본딩을 실시하는 경우에는 엘이디칩(140)이 상기 설명과는 다르게 절연피막층(120) 또는 방열판(110)에 직접 실장되는 것은 아니지만, 열전도율 면에서는 실질적으로 회로배선패턴층(130)은 열전도성이 우수한 금속박막이기 때문에 절연피막층(120) 또는 방열판(110)에 직접 실장하였을 때와 동일한 열전도성을 나타낸다.Next, the LED chip 140 is die-bonded to the formed circuit wiring pattern layer 130 and electrically connected thereto. In the case of performing die bonding as described above, the LED chip 140 is not directly mounted on the insulating film 120 or the heat dissipation plate 110, unlike the above description. Since it is a metal thin film having excellent thermal conductivity, it exhibits the same thermal conductivity as when directly mounted on the insulating film layer 120 or the heat sink 110.
상기 엘이디칩(140)은 상기와 같이 회로배선패턴층(130)에 직접 다이본딩되지 않고, 상기 방열판(110) 또는 절연피막층(120)의 상부에 직접 접하도록 실장한 후, 와이어 본딩을 통해 상기 회로배선패턴층(130)과 전기적으로 연결할 수 있다.The LED chip 140 is not directly die-bonded to the circuit wiring pattern layer 130 as described above, but is directly mounted to the upper portion of the heat sink 110 or the insulating coating layer 120, and then wire-bonded to the upper portion. It may be electrically connected to the circuit wiring pattern layer 130.
그 후, 저면측에서 상기 엘이디칩(140)이 삽입될 수 있는 삽입공간부(151)가 제공되는 확산판(150)을 준비하고, 그 삽입공간부(151)에 상기 엘이디칩(140)이 삽입되도록 그 확산판(150)을 상기 회로배선패턴층(130)에 부착한다.Subsequently, the diffusion plate 150 is provided on the bottom surface to provide the insertion space 151 into which the LED chip 140 can be inserted, and the LED chip 140 is inserted into the insertion space 151. The diffusion plate 150 is attached to the circuit wiring pattern layer 130 so as to be inserted.
이때 상기 삽입공간부(151)는 광을 확산시킬 수 있는 충진제가 충진된다.At this time, the insertion space 151 is filled with a filler that can diffuse the light.
상기 삽입공간부(151)의 형상은 원통형 또는 다면체형의 공간부이며, 상기 엘이디칩(140)과 와이어가 함께 삽입될 수 있는 구조이면 그 구조에 제한되지 않고 사용할 수 있다.The shape of the insertion space 151 is a cylindrical portion or a polyhedral space portion, if the structure can be inserted with the LED chip 140 and the wire can be used without limitation.
상기 삽입공간부(151)의 상면중앙에는 하향의 꼭지점을 가지는 원추형 반사부재(160)가 삽입된다. In the center of the upper surface of the insertion space 151 is a conical reflective member 160 having a downward vertex is inserted.
상기 반사부재(160)는 엘이디칩(140)의 상부측으로 방출되는 광의 양이 더 많기 때문에 그 엘이디칩(140)의 상면에서 발산되는 광을 반사시켜 상기 회로배선패턴층(130) 및 절연피막층(120)에서 재반사가 이루어 질 수 있도록 하는 것으로 광이 고르게 확산되어 균일한 면발광이 이루어지도록 한다.Since the reflective member 160 has a greater amount of light emitted to the upper side of the LED chip 140, the reflective member 160 reflects the light emitted from the upper surface of the LED chip 140 to form the circuit wiring pattern layer 130 and the insulating film layer ( 120) to allow re-reflection to evenly diffuse the light to achieve a uniform surface emission.
상기 회로배선패턴층(130) 및 절연피막층(120)도 반사판으로 사용할 수 있지만, 그 회로배선패턴층(130)과 확산판(150)이 접하는 부분에 별도의 반사판을 형성할 수 있다. 그 반사판은 보다 더 고른 확산을 위하여 다수의 브이(V) 패턴이 마련된 것일 수 있다.The circuit wiring pattern layer 130 and the insulating coating layer 120 may also be used as a reflecting plate, but a separate reflecting plate may be formed at a portion where the circuit wiring pattern layer 130 and the diffusion plate 150 contact each other. The reflector may be provided with a plurality of V patterns for even diffusion.
이와 같은 구조는 엘이디칩(140)이 확산판(150)의 내에 위치되게 하고 엘이디칩(140)의 상부측에 발광되는 빛을 반사시키기 위한 확산수단인 반사부재(160)를 구비하여, 그 확산판(150)이 빛을 균일하게 분포시키는 도광판의 기능과 빛을 확산시키는 확산기능을 동시에 하도록 함으로써, 보다 밝고 균일한 면발광을 이룰수 있게 된다. 따라서 별도의 확산시트가 필요없거나 또는 그 수를 줄일 수 있어 엘이디 패키지의 두께 및 제조비용을 줄일 수 있다.Such a structure is provided with the reflecting member 160 which is a diffusion means for placing the LED chip 140 in the diffuser plate 150 and reflecting the light emitted on the upper side of the LED chip 140, the diffusion By allowing the plate 150 to function as a light guide plate to uniformly distribute light and a diffusion function to diffuse light, it is possible to achieve brighter and more uniform surface light emission. Therefore, a separate diffusion sheet is not required or the number thereof can be reduced, thereby reducing the thickness and manufacturing cost of the LED package.
도 5는 상기 확산판(150) 및 확산수단의 다른 실시예의 단면 구성도이다.5 is a cross-sectional configuration diagram of another embodiment of the diffusion plate 150 and the diffusion means.
도 3을 참조하면 상기 확산판(150)의 삽입공간부(151)의 상부는 중앙이 더 낮도록 주변과는 단차를 가지는 형상일 수 있으며, 그 단차면인 경사면을 직접 확산수단으로 사용할 수 있고, 그 경사면에 상기 도 2의 실시예와는 다른 형상의 확산수단인 반사층(161)을 증착 또는 코팅의 방법으로 형성하여 사용할 수 있다.Referring to FIG. 3, an upper portion of the insertion space 151 of the diffusion plate 150 may have a step difference from the periphery so that the center thereof is lower, and an inclined surface that is the step surface may be directly used as a diffusion means. The reflective layer 161, which is a diffusion means having a shape different from that of the embodiment of FIG. 2, may be formed on the inclined surface by deposition or coating.
상기 반사층(161)과 반사부재(160)는 반사면의 형태가 원추형이거나, 다각의 뿔 형상일 수 있다.The reflective layer 161 and the reflective member 160 may have a conical shape or a polygonal horn shape.
또한 도 6은 상기 확산판(150)과 확산수단의 또 다른 실시예의 단면 구성도이다.6 is a cross-sectional view of another embodiment of the diffusion plate 150 and the diffusion means.
도 6을 참조하면, 상기 확산판(150)의 삽입공간부(151)의 상부에 대응하는 상면에는 원추형 또는 다각형 뿔 형상의 홈(152)이 형성되어 있으며, 그 홈(152)의 측면 경사면을 확산수단으로 사용하거나, 확산수단으로서 그 홈(152)의 일부 또는 전체에 반사부재(162) 또는 반사층(163)을 증착 또는 코팅의 방법으로 형성하여 사용할 수 있다. 상기 반사부재(162) 별도의 구조로 만들어 상기 홈(152)에 부착하여 형성할 수 있다.Referring to FIG. 6, the upper surface corresponding to the upper portion of the insertion space 151 of the diffuser plate 150 is formed with a conical or polygonal horn shaped groove 152, and the lateral inclined surface of the groove 152 is formed. As the diffusing means, the reflecting member 162 or the reflecting layer 163 may be formed on the part or the whole of the groove 152 by the vapor deposition or coating method as the diffusing means. The reflective member 162 may be formed in a separate structure and attached to the groove 152.
이와 같은 반사수단의 사용에 의하여 상기 엘이디칩(140)의 상부측으로 방출되는 광을 주변부로 확산시켜 균일한 면발광이 이루어질 수 있도록 한다.By the use of such reflecting means, the light emitted to the upper side of the LED chip 140 is diffused to the peripheral portion so that uniform surface emission can be achieved.
이와 같이 본 발명은 방열판의 상부에 다양한 방법으로 절연피막층을 형성한 상태에서, 그 절연피막층 상에 엘이디칩을 다수로 실장시켜 그 엘이디칩을 단일하게 패키징할 수 있으며, 그 다수의 엘이디칩에서 방출되는 열을 효과적으로 배출할 수 있게 된다.As described above, the present invention can mount a plurality of LED chips on the insulating film layer in a state in which the insulating film layer is formed on the top of the heat sink by a plurality of methods, and the LED chips can be packaged singly, and are emitted from the plurality of LED chips. Effective heat can be released.
또한 도 7은 본 발명의 다른 실시예에 따른 고방열 기판을 구비하는 엘이디 패키지의 단면 구성도이다.7 is a cross-sectional view of an LED package having a high heat dissipation substrate according to another embodiment of the present invention.
도 7을 참조하면 본 발명의 다른 실시예에 따른 고방열 기판을 구비하는 엘이디 패키지는, 상기 도 4를 참조하여 상세히 설명한 본 발명의 일실시예와 유사한 구성을 가지며, 상기 엘이디칩(140)이 실장되는 부분의 방열판(110)을 다른 부분에 비하여 더 높게 형성한다. Referring to FIG. 7, the LED package including the high heat dissipation substrate according to another embodiment of the present invention has a similar structure to that of the embodiment of the present invention described in detail with reference to FIG. 4, and the LED chip 140 is The heat sink 110 of the portion to be mounted is formed higher than other portions.
이는 상기 엘이디칩(140)의 높이를 보다 높게 하여, 엘이디칩(140)에서 발광되는 거의 모든 광을 면발광에 사용할 수 있게 되며, 따라서 보다 더 고휘도의 면발광을 할 수 있게 된다.This makes the height of the LED chip 140 higher, so that almost all the light emitted from the LED chip 140 can be used for surface light emission, and thus, surface light emission with higher luminance can be achieved.
도 8과 도 9는 본 발명의 또 다른 실시예에 따른 고방열 기판을 구비하는 엘이디 패키지의 단면 구성도이다.8 and 9 are cross-sectional configuration diagram of the LED package having a high heat radiation substrate according to another embodiment of the present invention.
도 8과 도 9를 각각 참조하면 본 발명의 또 다른 실시예에 따른 고방열 기판을 구비하는 엘이디 패키지는, 8 and 9, the LED package having a high heat dissipation substrate according to another embodiment of the present invention,
상부일부에 측면이 경사진 홈이 형성된 방열판(10)과, A heat sink 10 having a groove having an inclined side portion at an upper portion thereof,
상기 방열판(10)의 상부전면에 형성된 절연피막층(11)과, An insulating coating layer 11 formed on the upper surface of the heat sink 10,
상기 절연피막층(11) 상에 형성된 회로배선패턴층(20)과, A circuit wiring pattern layer 20 formed on the insulating coating layer 11,
상기 방열판(10)의 경사진 홈의 중앙부 절연피막층(11) 상에 실장되며, 상기 회로배선패턴층(20)에 전기적으로 연결되는 엘이디칩(30)과, An LED chip 30 mounted on the center insulating film layer 11 of the inclined groove of the heat sink 10 and electrically connected to the circuit wiring pattern layer 20;
상기 방열판(10)의 측면이 경사진 홈을 충진하는 충진제(50)와, Filler 50 for filling the inclined groove side of the heat sink 10,
상기 구조의 상부전면에 형성되는 확산판(60)을 포함하여 구성된다. It comprises a diffusion plate 60 formed on the upper front surface of the structure.
이하, 상기와 같이 구성된 본 발명의 제3실시예의 구조 및 작용을 보다 상세히 설명한다.Hereinafter, the structure and operation of the third embodiment of the present invention configured as described above will be described in more detail.
먼저, 방열판(10)은 열전도율이 우수하며, 금속의 광택을 유지하여 반사효율이 우수한 것을 사용한다. 예를 들어 알루미늄을 사용할 수 있다.First, the heat sink 10 is excellent in thermal conductivity, and maintains the gloss of the metal to use the excellent reflection efficiency. For example, aluminum can be used.
상기 방열판(10)의 상부에는 적어도 하나 이상의 홈이 형성되며, 그 홈의 측면은 경사지게 형성되어, 그 경사면에서 이후에 설명할 엘이디칩(30)의 광이 직접 반사될 수 있게 한다.At least one groove is formed in an upper portion of the heat sink 10, and a side surface of the groove is inclined so that the light of the LED chip 30, which will be described later, is directly reflected from the inclined surface.
상기 방열판(10)의 상부전면에는 절연피막층(11)을 형성한다. 상기 절연층(11)은 절연물질의 증착, 아노다이징 또는 용사코팅을 이용하여 형성할 수 있으며, 재질의 예로는 SiO2 또는 Al2O3를 사용할 수 있다.An insulating coating layer 11 is formed on the upper front surface of the heat sink 10. The insulating layer 11 may be formed by deposition, anodizing or thermal spray coating of an insulating material, and an example of the material may be SiO 2 or Al 2 O 3 .
상기의 예 이외에도 상기 절연피막층(11)은 열의 전도도와 절연특성이 우수한 것을 선택하여 사용하는 것이 바람직하다.In addition to the above examples, it is preferable to select and use the insulating coating layer 11 having excellent thermal conductivity and insulating properties.
그 다음, 상기 절연피막층(11)의 상부에 회로배선패턴층(20)을 형성한다. 상기 회로배선패턴층(20)은 증착, 도금 또는 용사코팅 후 선택적식각법을 사용하거나, 금속 시트의 부착으로 형성할 수 있다.Next, a circuit wiring pattern layer 20 is formed on the insulating coating layer 11. The circuit wiring pattern layer 20 may be formed by selective etching after deposition, plating, or thermal spray coating, or by attaching a metal sheet.
상기 회로배선패턴층(20)은 상기 방열판(10)의 홈의 측면인 경사면까지 형성될 수도 있고, 그 홈을 제외한 평면부분에 형성할 수 있다.The circuit wiring pattern layer 20 may be formed up to an inclined surface that is a side surface of the groove of the heat sink 10, or may be formed on a planar portion except for the groove.
이는 이후에 설명하는 엘이디칩의 실장방법에 따라 달라질 수 있다. 또한 상기 회로배선패턴층(20) 또한 금속의 광택을 유지하여 광의 반사효율이 높은 것을 사용한다.This may vary depending on the method of mounting the LED chip described later. In addition, the circuit wiring pattern layer 20 also maintains the gloss of the metal to use a high reflection efficiency of light.
그 다음, 상기 방열판(10)의 홈 중앙의 절연피막층(11) 상에 엘이디칩(30)을 실장시키고, 그 엘이디칩(30)과 상기 형성된 회로배선패턴층(20)을 전기적으로 연결한다.Next, the LED chip 30 is mounted on the insulating film layer 11 at the center of the groove of the heat sink 10, and the LED chip 30 and the formed circuit wiring pattern layer 20 are electrically connected to each other.
상기 연결방법으로는 도 9에 도시한 바와 같이 와이어를 이용한 와이어본딩을 실시하거나, 상기 회로배선패턴층(20)을 상기 방열판(10)의 홈 바닥면의 주변부까지 형성한 후, 그 엘이디칩(30)을 직접 다이본딩하여 형성할 수 있다.As the connection method, wire bonding is performed using wires as shown in FIG. 9, or the circuit wiring pattern layer 20 is formed to the periphery of the bottom surface of the groove of the heat sink 10, and then the LED chip ( 30) can be formed by direct die bonding.
상기 엘이디칩(30)은 통상의 엘이디칩을 사용할 수 있고, 서브마운트가 제외된 엘이디칩을 사용할 수 있다.The LED chip 30 may use a conventional LED chip, and may use an LED chip without submounts.
이와 같이 엘이디칩(30)이 방열판(10) 상의 절연피막층(11)에 직접 실장되기 때문에 엘이디칩(30)에서 발생되는 열을 방출하기가 보다 용이하며, 따라서 PCB 등의 기판을 사용하고, 그 기판을 방열시키는 구조에 비하여 열방출효율이 높으며, 엘이디칩의 열화를 방지하여 엘이디칩 패키지의 수명을 향상시킬 수 있게 된다.Since the LED chip 30 is directly mounted on the insulating film layer 11 on the heat sink 10, it is easier to dissipate heat generated from the LED chip 30, and thus, a substrate such as a PCB is used. The heat dissipation efficiency is higher than that of the heat dissipation substrate, and the life of the LED chip package can be improved by preventing the degradation of the LED chip.
상기 충진제(50)와 확산판(60)은 엘이디칩(30)의 보호 및 광의 확산을 통해 면발광이 가능한 구조를 제공한다.The filler 50 and the diffusion plate 60 provide a structure capable of surface emission through the protection of the LED chip 30 and the diffusion of light.
본 발명은 엘이디 패키지의 열방출효율을 높여 엘이디의 사용수명단축을 방지하며, 엘이디 패키지의 두께를 줄일 수 있고, 면발광효율이 우수한 고방열기판을 구비하는 엘이디 패키지에 관한 것으로, 산업상 이용 가능성이 있다.The present invention relates to an LED package having a high heat dissipation substrate which can increase the heat dissipation efficiency of the LED package to prevent shortening the service life of the LED, reduce the thickness of the LED package, and have excellent surface light emitting efficiency. have.

Claims (18)

  1. 방열판;Heat sink;
    상기 방열판의 상부에 형성되는 절연피막층;An insulation coating layer formed on the heat sink;
    상기 절연피막층위에 형성하는 회로배선패턴층; 및A circuit wiring pattern layer formed on the insulating coating layer; And
    상기 회로배선패턴층에 직접 실장되는 적어도 한 개 이상의 엘이디칩을 포함하는 고방열기판을 구비한 엘이디 패키지. An LED package having a high heat dissipation substrate comprising at least one LED chip mounted directly on the circuit wiring pattern layer.
  2. 제1항에 있어서,The method of claim 1,
    상기 엘이디칩이 삽입되는 삽입공간부를 제공하며, 그 엘이디칩으로부터 방출되는 광을 확산시켜 면발광을 이루는 확산판; 및 A diffusion plate providing an insertion space portion into which the LED chip is inserted, and diffusing light emitted from the LED chip to form surface emission; And
    상기 엘이디칩의 상부측 확산판의 일부에 위치하여, 상기 엘이디칩의 상부측 광량을 반사시키는 확산수단을 더 포함하는 고방열 기판을 구비하는 엘이디 패키지.The LED package having a high heat dissipation substrate positioned on a part of the upper diffusion plate of the LED chip, further comprising a diffusion means for reflecting the light amount of the upper side of the LED chip.
  3. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 방열판은 단차가 높은 부분을 포함하며, 상기 엘이디칩이 상기 단차가 높은 부분의 상부의 상기 방열판 또는 상기 절연피막층 상에 실장되는 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.The heat dissipation plate includes a portion having a high step, the LED package having a high heat dissipation substrate, characterized in that the LED chip is mounted on the heat sink or the insulating film layer of the upper portion of the high step.
  4. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 방열판은 측면이 경사진 홈을 포함하며, 상기 엘이디칩이 상기 측면이 경사진 홈의 바닥면의 상기 방열판 또는 상기 절연피막층 상에 실장되는 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.The heat dissipation plate of the LED package having a high heat dissipation substrate, characterized in that the side surface is inclined groove, the LED chip is mounted on the heat sink or the insulating film layer of the bottom surface of the inclined groove.
  5. 제2항에 있어서,The method of claim 2,
    상기 확산수단은 상기 확산판의 저면측에 마련되어 상기 엘이디칩이 삽입되는 상기 삽입공간부의 상부측에 위치하는 반사부재인 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.The diffusion means is an LED package having a high heat dissipation substrate, characterized in that the reflection member is provided on the bottom side of the diffusion plate located on the upper side of the insertion space portion into which the LED chip is inserted.
  6. 제2항에 있어서,The method of claim 2,
    상기 확산수단은 상기 확산판의 저면측에 마련되어 상기 엘이디칩이 삽입되는 상기 삽입공간부의 상면의 경사면인 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.The diffusion means is an LED package having a high heat dissipation substrate, characterized in that the inclined surface of the top surface of the insertion space is provided on the bottom side of the diffusion plate is inserted the LED chip.
  7. 제6항에 있어서,The method of claim 6,
    상기 확산수단은 상기 경사면의 외측에 위치하는 반사층을 더 포함하는 고방열 기판을 구비하는 엘이디 패키지.The diffusion means LED package having a high heat dissipation substrate further comprises a reflective layer located on the outside of the inclined surface.
  8. 제2항에 있어서,The method of claim 2,
    상기 확산수단은 상기 엘이디칩의 상부측 상기 확산판 상면에 마련된 홈의 경사면인 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.The diffusion means is an LED package having a high heat dissipation substrate, characterized in that the inclined surface of the groove provided on the upper surface of the diffusion plate of the LED chip.
  9. 제8항에 있어서,The method of claim 8,
    상기 확산수단은 상기 홈에 삽입되는 반사부재를 더 포함하는 고방열 기판을 구비하는 엘이디 패키지.The diffusion means is an LED package having a high heat dissipation substrate further comprising a reflective member inserted into the groove.
  10. 제8항에 있어서,The method of claim 8,
    상기 확산수단은 상기 홈의 경사면에 형성되는 반사층을 더 포함하는 고방열 기판을 구비하는 엘이디 패키지.The diffusion means LED package having a high heat dissipation substrate further comprises a reflective layer formed on the inclined surface of the groove.
  11. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 절연피막층은,The insulating film layer,
    증착방법으로 형성하여 된 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.An LED package having a high heat dissipation substrate, characterized in that formed by the deposition method.
  12. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 절연피막층은,The insulating film layer,
    용사코팅방법으로 형성하여 된 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.An LED package having a high heat dissipation substrate, characterized in that formed by the thermal spray coating method.
  13. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 절연피막층은,The insulating film layer,
    아노다이징방법으로 형성하여 된 것을 특징으로 하는 고방열 기판을 구비하는 엘이디 패키지.An LED package having a high heat dissipation substrate, characterized in that formed by the anodizing method.
  14. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 절연피막층은 절연성능이 우수하고 열전도도가 높은 물질을 우선으로하는 것을 특징으로 하는 고방열기판을 구비한 엘이디 패키지.The insulating film layer is an LED package having a high heat dissipation substrate, characterized in that the material having excellent insulation performance and high thermal conductivity first.
  15. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 회로배선패턴층은,The circuit wiring pattern layer,
    증착방법으로 증착한 후 선택적식각하여 형성된 것을 특징으로 하는 고방열기판을 구비한 엘이디 패키지.LED package having a high heat dissipation substrate, characterized in that formed by selectively etching after the deposition method.
  16. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 회로배선패턴층은,The circuit wiring pattern layer,
    도금방법으로 형성한 후 선택적식각하여 형성된 것을 특징으로 하는 고방열기판을 구비한 엘이디 패키지.LED package having a high heat dissipation substrate, characterized in that formed by the plating method and then selectively etched.
  17. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 회로배선패턴층은,The circuit wiring pattern layer,
    용사코팅으로 형성한 후 선택적식각하여 형성된 것을 특징으로 하는 고방열기판을 구비한 엘이디 패키지.LED package having a high heat dissipation substrate, characterized in that formed by thermal spray coating and then selectively etched.
  18. 제1항 또는 제2항에 있어서,The method according to claim 1 or 2,
    상기 회로배선패턴층은,The circuit wiring pattern layer,
    금속 시트를 부착하여 된 것을 특징으로 하는 고방열기판을 구비한 엘이디 패키지.An LED package having a high heat dissipation substrate, characterized in that the metal sheet is attached.
PCT/KR2009/006929 2008-11-24 2009-11-24 Led package furnished with substrate of high heat radiation WO2010059013A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0117074 2008-11-24
KR1020080117074A KR20100058316A (en) 2008-11-24 2008-11-24 Led package having a high performance radiator
KR10-2008-0125728 2008-12-11
KR1020080125728A KR101517930B1 (en) 2008-12-11 2008-12-11 Multi-chip LED package having a high performance radiator

Publications (2)

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WO2010059013A2 true WO2010059013A2 (en) 2010-05-27
WO2010059013A3 WO2010059013A3 (en) 2010-09-10

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358371A (en) * 2000-06-16 2001-12-26 Nichia Chem Ind Ltd Optical semiconductor device
KR100593933B1 (en) * 2005-03-18 2006-06-30 삼성전기주식회사 Side-emitting led package having scattering area and backlight apparatus incorporating the led lens
JP2007184541A (en) * 2005-12-09 2007-07-19 Matsushita Electric Ind Co Ltd Light-emitting module, manufacturing method thereof and backlight apparatus using same
KR100784057B1 (en) * 2005-06-24 2007-12-10 엘지이노텍 주식회사 Light emitting device package and mauufacture method of light emitting device package
JP2008218998A (en) * 2007-02-09 2008-09-18 Toshiba Lighting & Technology Corp Light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358371A (en) * 2000-06-16 2001-12-26 Nichia Chem Ind Ltd Optical semiconductor device
KR100593933B1 (en) * 2005-03-18 2006-06-30 삼성전기주식회사 Side-emitting led package having scattering area and backlight apparatus incorporating the led lens
KR100784057B1 (en) * 2005-06-24 2007-12-10 엘지이노텍 주식회사 Light emitting device package and mauufacture method of light emitting device package
JP2007184541A (en) * 2005-12-09 2007-07-19 Matsushita Electric Ind Co Ltd Light-emitting module, manufacturing method thereof and backlight apparatus using same
JP2008218998A (en) * 2007-02-09 2008-09-18 Toshiba Lighting & Technology Corp Light emitting device

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