KR20100055255A - Organic light emitting display device - Google Patents

Abstract

PURPOSE: The organic electroluminescent display device utilizes the micro cavity property. The optical property and color characterization of luminance are improved. CONSTITUTION: A sub pixel is located on surface the first substrate(110). It faces with the first substrate and the second substrate locates. A dielectric layer(130) is located on surface the second substrate. The sub pixel comprises the red, and the green and blue subpixel. The dielectric layer comprises the first dielectric layer and the second dielectric layer.

Description

Organic Light Emitting Display Device

Embodiments of the present invention relate to an organic light emitting display device.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes positioned on a substrate.

The organic light emitting display includes a top emission type, a bottom emission type, or a dual emission type according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

In the organic light emitting display device, when a scan signal, a data signal, and a power are supplied to a plurality of subpixels arranged in a matrix form, the selected subpixels emit light to display an image.

Subpixels having an active matrix structure include a transistor positioned on a substrate and an organic light emitting diode positioned on the transistor. In the case of an organic light emitting diode, there are a normal type in which an anode, an organic light emitting layer, and a cathode are formed on a transistor, and an inverted type in which a cathode, an organic light emitting layer, and an anode are formed on a transistor.

On the other hand, the organic light emitting display device including a sub pixel formed of a conventional normal type and an inverted type structure should be provided to further improve display quality.

An embodiment of the present invention for solving the above problems of the background art, by using a micro-cavity characteristics by providing an organic light emitting display device having a top-emitting organic light emitting display that can improve the intensity, optical characteristics and color characteristics of the display quality To improve.

Embodiments of the present invention as a means for solving the above problems, the first substrate; A sub pixel on the first substrate; A second substrate spaced apart from the first substrate; And it provides an organic light emitting display device comprising a dielectric layer located on a second substrate.

In the dielectric layer, the first dielectric layer and the second dielectric layer are alternately stacked to form a multilayer, but the first dielectric layer and the second dielectric layer may be different materials.

The dielectric layer may be formed by alternately stacking at least two first dielectric layers and at least two second dielectric layers, wherein the first type dielectric layer and the second dielectric layer may be heterogeneous materials.

The subpixels include red, green, and blue subpixels, and the dielectric layer may be formed to have the same thickness for every red, green, and blue subpixel.

The subpixels include red, green, and blue subpixels, and the dielectric layer may be formed to have different thicknesses for each of the red, green, and blue subpixels.

The dielectric layer may be formed of one single layer or a composite layer thereof selected from an oxide-based or a nitride-based.

A bus electrode is disposed on the dielectric layer and is formed in a region corresponding to the bank layer. The bus electrode may be formed in a mesh shape along the bank layer.

The bus electrode may be in contact with the upper electrode.

The subpixel includes a transistor located on the first substrate, a lower electrode disposed on the transistor and connected to a source or a drain of the transistor, a bank layer disposed on the lower electrode and exposing a portion of the lower electrode, and on the bank layer. The organic light emitting layer and the upper electrode positioned on the organic light emitting layer may be included.

When the upper electrode is selected as the anode, the thickness of the upper electrode may be thinner than the thickness of the lower electrode.

Embodiments of the present invention, by using a micro-cavity characteristics to provide a front-emitting organic light emitting display device that can improve the intensity, optical characteristics and color characteristics of the luminance has the effect of improving the display quality.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a schematic plan view of an organic light emitting display device according to an embodiment of the present invention.

As illustrated in FIG. 1, an organic light emitting display device according to an exemplary embodiment of the present invention may include a first substrate 110 having a display unit AA on which a plurality of sub pixels SP are disposed. It may also include a second substrate 180 having a dielectric layer. In addition, the driving unit 160 may supply a driving signal to elements positioned on the first substrate 110. In addition, it may include a pad unit 170 connected to the external circuit board to transmit various signals supplied from the outside.

The first substrate 110 may be formed of a light transmissive or non-transparent material, and the second substrate 180 may be formed of a light transmissive material. Materials of the first substrate 110 and the second substrate 180 include glass, metal, ceramic, or plastic (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy Resins, silicone resins, fluororesins, and the like).

The subpixel SP may be positioned in a matrix form on the display unit AA defined on the first substrate 110. The subpixel SP may be formed in an active matrix type and a passive matrix type according to a driving method. When the subpixel SP is of an active matrix type, the subpixel SP may include a transistor formed on the first substrate 110 and an organic light emitting diode positioned on the transistor. In contrast, the passive matrix type may include an organic light emitting diode except for a transistor.

The driver 160 may include a data driver and a scan driver for supplying a data signal and a scan signal to the plurality of sub-pixels SP included in the display unit AA. The data driver may receive a horizontal synchronization signal and an image data signal from an external source and generate a data signal by referring to the horizontal synchronization signal. The scan driver may receive a vertical synchronization signal from an external source and generate a scan signal and a control signal to be supplied to the plurality of subpixels SP with reference to the vertical synchronization signal. Here, the data driver and the scan driver included in the driver 160 may be separately located on the first substrate 110.

2 is a conceptual diagram of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIG. 3 is a diagram illustrating an arrangement of bus electrodes.

As shown in FIG. 2 and FIG. 3, in the organic light emitting display device according to the exemplary embodiment of the present invention, the sub-pixel SP is positioned on the first substrate 110 and is spaced apart from the first substrate 110. The dielectric layer 130 may be disposed on the second substrate 180. And a bus electrode 140 positioned on the dielectric layer 130.

The dielectric layer 130 may be formed of one single layer or a composite layer thereof selected from oxide or nitride. When the dielectric layer 130 is formed of a composite layer, they may have a form in which heterogeneous dielectric layers 130 are alternately stacked.

The bus electrode 140 may be positioned on the non-emission area NEA rather than the emission area EA of the sub-pixel SP. Here, the bus electrode 140 may be formed along the bank layer located on the first substrate 110.

Although the bus electrode 140 is formed in the form of a mesh (mesh) as an example of the embodiment, the bus electrode 140 may also be in the vertical or horizontal direction in the non-light emitting area NEA of the second substrate 180. It may also be located in the form of bars arranged as.

Meanwhile, when the first substrate 110 and the second substrate 180 are vacuum bonded to each other, the bus electrode 140 and the upper electrode included in the sub-pixel SP may be electrically contacted. When the bus electrode 140 and the upper electrode included in the sub pixel SP are electrically contacted, the bus electrode 140 becomes an auxiliary electrode capable of lowering the resistance of the upper electrode.

First Embodiment

4 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

As shown in FIG. 4, a buffer layer 111 may be positioned on the first substrate 110. The buffer layer 111 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the first substrate 110, but may be omitted. The buffer layer 111 may use silicon oxide (SiOx), silicon nitride (SiNx), or the like, but is not limited thereto.

The gate 112 may be located on the buffer layer 111. The gate 112 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of one or an alloy thereof. In addition, the gate 112 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 may be positioned on the gate 112. The first insulating layer 113 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 114 may be positioned on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

Source drains 115a and 115b may be positioned on the active layer 114. The source drains 115a and 115b may be formed of a single layer or multiple layers. When the source drains 115a and 115b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), Titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof selected from the group consisting of. In addition, when the source drains 115a and 115b are multi-layered, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second insulating layer 116a may be positioned on the source drains 115a and 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

One of the source drains 115a and 115b may be disposed on the second insulating layer 116a and may be connected to a shield metal 118 to prevent interference between the source drains 115a and 115b.

The third insulating layer 116b may be positioned on the second insulating layer 116a to increase the flatness. The third insulating layer 116b may include an organic material such as polyimide.

As described above, the transistor T formed on the first substrate 110 has a batam gate type as an example. However, the transistor T formed on the first substrate 110 may be formed in not only a batam gate type but also a top gate type.

The lower electrode 117 connected to the source 115a or the drain 115b may be positioned on the third insulating layer 116b of the transistor T. The lower electrode 117 may be selected as an anode or a cathode. When the lower electrode 117 is selected as the cathode, the material of the cathode may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Almind (AlNd), but is not limited thereto. In addition, when the lower electrode 117 is selected as the cathode, it is advantageous to form a material having a high reflectivity as the material of the cathode.

The bank layer 119 having an opening exposing a portion of the lower electrode 117 may be disposed on the lower electrode 117. The bank layer 119 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

The organic emission layer 121 may be positioned on the lower electrode 117. The organic emission layer 121 may be formed to emit one of red, green, and blue colors depending on the subpixels.

The upper electrode 122 may be positioned on the organic emission layer 121. The upper electrode 122 may be selected as a cathode or an anode. When the upper electrode 122 is selected as the anode, the anode material may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped al 2 oxide (AZO). However, the present invention is not limited thereto.

The dielectric layer 130 may be positioned on the second substrate 180. The dielectric layer 130 may be formed of one single layer selected from an oxide based or nitride based.

The bus electrode 140 may be positioned on the dielectric layer 130 in a region corresponding to the bank layer 119 on the first substrate 110. The bus electrode 140 may contact the upper electrode 122, and may be variously formed as described with reference to FIG. 3. Meanwhile, when the bus electrode 140 and the upper electrode 122 are formed in contact with each other, the thickness of the upper electrode 122 may be thin. In this case, the thickness of the upper electrode 122 may be formed thin, thereby minimizing damage to the organic light emitting layer 121 formed under the upper electrode 122 during the deposition of the upper electrode 122. In this case, the degree of freedom of thickness conversion between the hole injection layer and the hole transport layer may be increased to optimize optical and color characteristics.

Hereinafter, an organic light emitting diode including the organic light emitting layer 121 will be described in more detail with reference to FIG. 5.

5 illustrates an example of a hierarchical structure of an organic light emitting diode.

As shown in FIG. 5, when the organic light emitting diode has an inverted structure, the organic light emitting diode has a lower electrode 117, an electron injection layer 121a, an electron transport layer 121b, a light emitting layer 121c, The hole transport layer 121d, the hole injection layer 121e, and the upper electrode 122 may be included.

The electron injection layer 121a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

The electron transport layer 121b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The emission layer 121c may include a material emitting red, green, blue, and white light and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 121c is red, the host material includes CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and includes PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 121c is green, the light emitting layer 121c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 121c is blue, the light emitting layer 121c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The hole transport layer 121d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole injection layer 121e may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 5, and at least one of the electron injection layer 121a, the electron transport layer 121b, the hole transport layer 121d, and the hole injection layer 121e may be omitted. . In addition to the inverted type, the organic light emitting diode is included in the top emission type and may be a normal type stacked in the order of the anode, the organic light emitting layer, and the cathode.

6 and 7 are schematic diagrams of an organic light emitting display device according to a first embodiment of the present invention.

The organic light emitting display device according to the first embodiment of the present invention may be configured as shown in FIG. 6 or 7.

First, referring to FIG. 6, the dielectric layers 130_R, 130_G, and 130_B on the second substrate 180 are formed of the red, green, and blue subpixels SP_R, SP_G, and SP_B formed on the first substrate 110. Each may be formed to have the same thickness.

Next, referring to FIG. 7, the red, green, and blue subpixels SP_R, SP_G, and SP_B formed on the first substrate 110 may be formed on the dielectric layers 130_R, 130_G, and 130_B on the second substrate 180. Each may be formed to have a different thickness. In the example of FIG. 7, the thicknesses of the dielectric layers 130_R, 130_G, and 130_B have red, green, and blue subpixels SP_R, SP_G, and SP_B permutations, but are not limited thereto.

Second Embodiment

8 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.

As shown in FIG. 8, a buffer layer 211 may be positioned on the first substrate 210. The buffer layer 211 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the first substrate 210, but may be omitted. The buffer layer 211 may use silicon oxide (SiOx), silicon nitride (SiNx), or the like, but is not limited thereto.

The gate 212 may be located on the buffer layer 211. The gate 212 is any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be made of one or an alloy thereof. In addition, the gate 212 is in the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 212 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 213 may be positioned on the gate 212. The first insulating layer 213 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 214 may be positioned on the first insulating layer 213. The active layer 214 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown, the active layer 214 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 214 may include an ohmic contact layer to lower the contact resistance.

Source drains 215a and 215b may be disposed on the active layer 214. The source drains 215a and 215b may be formed of a single layer or multiple layers. When the source drains 215a and 215b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), Titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof selected from the group consisting of. In addition, when the source drains 215a and 215b are multi-layered, a double layer of molybdenum / aluminum-neodymium and a triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second insulating layer 216a may be positioned on the source drains 215a and 215b. The second insulating layer 216a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

One of the source drains 215a and 215b may be disposed on the second insulating layer 216a and may be connected to a shield metal 218 to prevent interference between the source drains 215a and 215b.

The third insulating layer 216b may be positioned on the second insulating layer 216a to increase the flatness. The third insulating layer 216b may include an organic material such as polyimide.

As described above, the transistor T formed on the first substrate 210 has a batam gate type as an example. However, the transistor T formed on the first substrate 210 may be formed not only as a batam gate type but also as a top gate type.

The lower electrode 217 connected to the source 215a or the drain 215b may be positioned on the third insulating layer 216b of the transistor T. The lower electrode 217 may be selected as an anode or a cathode. When the lower electrode 217 is selected as the cathode, the material of the cathode may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Almind (AlNd), but is not limited thereto. In addition, when the lower electrode 217 is selected as the cathode, it is advantageous to form a material having high reflectivity as the material of the cathode.

The bank layer 219 having an opening exposing a portion of the lower electrode 217 may be disposed on the lower electrode 217. The bank layer 219 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

The organic emission layer 221 may be positioned on the lower electrode 217. The organic emission layer 221 may be formed to emit one of red, green, and blue colors depending on the subpixels.

The upper electrode 222 may be positioned on the organic emission layer 221. The upper electrode 222 may be selected as a cathode or an anode. When the upper electrode 222 is selected as the anode, the anode material may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped al 2 oxide (AZO). However, the present invention is not limited thereto.

A plurality of dielectric layers 230 may be positioned on the second substrate 280. The plurality of dielectric layers 230 may be formed of one single layer selected from an oxide or a nitride system. Here, in the dielectric layer 230, the first dielectric layers 230a and 230c and the second dielectric layers 230b and 230d are alternately stacked to form a multilayer, but the first dielectric layers 230a and 230c and the second dielectric layers 230b and 230d are formed. May be a heterogeneous material. For example, the first dielectric layers 230a and 230c may be formed of oxide, and the second dielectric layers 230b and 230d may be formed of nitride. In another example, the first dielectric layers 230a and 230c and the second dielectric layers 230b and 230d may be formed. ) Is formed of the same oxide-based or nitride-based, but is formed of silicon dioxide (SiO 2) in the case of the first dielectric layers 230a and 230c and is formed of titanium dioxide (TiO 2) in the case of the second dielectric layers 230b and 230d. Can be.

In contrast, the dielectric layer 230 is formed by alternately stacking at least two first dielectric layers 230a and 230b and at least two second dielectric layers 230c and 230d to form a multilayer, but the first type dielectric layers 230a and 230b. ) And the second dielectric layers 230c and 230d may be heterogeneous materials. That is, this structure is similar to the structure described above, but may have a form in which the first dielectric layers 230a and 230b and the second dielectric layers 230c and 230d are alternately stacked by being composed of at least two groups.

The bus electrode 240 may be positioned on the dielectric layer 230 in a region corresponding to the bank layer 219 positioned on the first substrate 210. The bus electrode 240 may contact the upper electrode 222 and may be variously formed as described with reference to FIG. 3. When the bus electrode 240 and the upper electrode 222 are formed in contact with each other, the thickness of the upper electrode 222 may be thin. In this case, the thickness of the upper electrode 222 can be formed thin, thereby minimizing damage to the organic light emitting layer 221 formed under the upper electrode 222 during the deposition of the upper electrode 222. In this case, the degree of freedom of thickness conversion between the hole injection layer and the hole transport layer may be increased to optimize optical and color characteristics.

9 and 10 are schematic diagrams of an organic light emitting display device according to a second embodiment of the present invention.

The organic light emitting display device according to the second embodiment of the present invention may be configured as shown in FIG. 9 or FIG. 10.

First, referring to FIG. 9, the dielectric layers 230_R, 230_G, and 230_B positioned on the second substrate 280 are formed of the red, green, and blue subpixels SP_R, SP_G, and SP_B formed on the first substrate 210. Each may be formed to have the same thickness.

Next, referring to FIG. 10, red, green, and blue subpixels SP_R, SP_G, and SP_B formed on the first substrate 210 may be formed on the dielectric layers 230_R, 230_G, and 230_B on the second substrate 280. Each may be formed to have a different thickness. In the example of FIG. 10, the thicknesses of the dielectric layers 230_R, 230_G, and 230_B have red, green, and blue subpixels SP_R, SP_G, and SP_B permutations, but are not limited thereto.

Embodiments of the present invention, by using a micro-cavity characteristics to improve the display quality by providing a front-emitting organic light emitting display device that can improve the intensity, optical characteristics and color characteristics of the brightness.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a schematic plan view of an organic light emitting display device according to an embodiment of the present invention;

2 is a conceptual diagram of an organic light emitting display device according to an embodiment of the present invention;

3 is an exemplary layout of a bus electrode.

4 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

5 is an exemplary hierarchical structure of an organic light emitting diode.

6 and 7 are schematic diagrams of an organic light emitting display device according to a first embodiment of the present invention.

8 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention;

9 and 10 are schematic diagrams of an organic light emitting display device according to a second embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110, 210: first substrate 117, 217: lower electrode

121, 221: organic light emitting layer 122, 222: upper electrode

130 and 230: dielectric layers 140 and 240: bus electrodes

180, 280: second substrate

Claims (10)

First substrate; A sub pixel on the first substrate; A second substrate spaced apart from the first substrate; And An organic light emitting display device comprising a dielectric layer on the second substrate. The method of claim 1, The dielectric layer, The first dielectric layer and the second dielectric layer are alternately stacked to form a multilayer, And the first dielectric layer and the second dielectric layer are heterogeneous materials. The method of claim 1, The dielectric layer, At least two first dielectric layers and at least two second dielectric layers are alternately stacked to form a multilayer. And the first dielectric layer and the second dielectric layer are heterogeneous materials. The method of claim 1, The subpixels comprise red, green and blue subpixels, The dielectric layer, And the red, green, and blue subpixels have the same thickness. The method of claim 1, The subpixels comprise red, green and blue subpixels, The dielectric layer, An organic light emitting display device, wherein the organic light emitting display device is formed to have a different thickness for each of the red, green, and blue subpixels. The method of claim 1, The dielectric layer, An organic light emitting display device, characterized in that formed of one single layer or a composite layer thereof selected from an oxide or a nitride system. The method of claim 1, A bus electrode on the dielectric layer and formed in a region corresponding to the bank layer; The bus electrode, An organic light emitting display device, characterized in that formed in a mesh shape along the bank layer. The method of claim 7, wherein The bus electrode, The organic light emitting display device of claim 1, wherein the organic light emitting display device is in contact with the upper electrode. The method of claim 1, The sub pixel is, A transistor on the first substrate; A lower electrode on the transistor and connected to a source or a drain of the transistor; A bank layer on the lower electrode and exposing a portion of the lower electrode; An organic light emitting layer on the bank layer; An organic light emitting display device comprising an upper electrode on the organic light emitting layer. 10. The method of claim 9, When the upper electrode is selected as the anode, The thickness of the upper electrode is thinner than the thickness of the lower electrode.

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