KR20100052729A - Image sensor and method for manufacturing the sensor - Google Patents

Image sensor and method for manufacturing the sensor Download PDF

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Publication number
KR20100052729A
KR20100052729A KR1020080111567A KR20080111567A KR20100052729A KR 20100052729 A KR20100052729 A KR 20100052729A KR 1020080111567 A KR1020080111567 A KR 1020080111567A KR 20080111567 A KR20080111567 A KR 20080111567A KR 20100052729 A KR20100052729 A KR 20100052729A
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South Korea
Prior art keywords
photodiode
diffusion region
conductivity type
image sensor
semiconductor substrate
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KR1020080111567A
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Korean (ko)
Inventor
임근혁
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주식회사 동부하이텍
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Priority to KR1020080111567A priority Critical patent/KR20100052729A/en
Publication of KR20100052729A publication Critical patent/KR20100052729A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The present invention provides an image sensor and a method of manufacturing the same. The sensor is formed on the surface of the gate pattern formed on the first conductive semiconductor substrate, the second conductive photodiode and the photodiode formed on the semiconductor substrate on one side of the gate pattern, and has a thickness less than or equal to a threshold value. It is characterized by including the 1st conductivity type 1st diffusion area | region. Therefore, a thinner diffusion region can be formed than in the general case, and thus, the saturation level can be improved and the photodiode region can be formed to the maximum, thereby improving the short wavelength (blue) characteristic.

Description

Image sensor and method for manufacturing the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to an image sensor and a method for manufacturing the same.

An image sensor is a semiconductor device that converts an optical image into an electrical signal. Among the image sensors, a charge coupled device (CCD) is a device in which charge carriers are stored and transported in a capacitor while individual metal-oxide-silicon (MOS) capacitors are located in close proximity to each other. Complementary MOS (CMOS) image sensor employs a switching method that uses a CMOS technology that uses control circuits and signal processing circuits as peripheral circuits to make MOS transistors as many as the number of pixels, and to sequentially detect the output using them. It is an element to make. For example, in a CMOS image sensor, incident light reaches a photodiode (not shown) via a micro lens (not shown) and a color filter (not shown). Therefore, light energy generates electrons and holes in the silicon and converts the generated electrons into voltage and reads them, and this is realized as an image.

As is well known, a pinned photodiode detects light from the outside in a CCD or CMOS image sensor to generate photocharges, and has a PNP or NPN junction structure embedded inside the substrate. Also called buried photodiode.

Hereinafter, a general CMOS image sensor will be described with reference to the accompanying drawings.

1 shows a cross-sectional view of a general image sensor.

Referring to FIG. 1, a P-type epitaxial layer 12 is formed on a P + type semiconductor substrate 10. The device isolation film 14 is formed by a known method, and the gate insulating film 18 and the gate electrode 16 are formed. An antireflective coating layer (not shown) may be formed on the gate pattern 20 to prevent heating when the gate is patterned. The gate electrode 16 illustrated in the drawing may be a gate of a transfer transistor. Each gate pattern of the reset transistor, the drive transistor, and the select transistor is formed.

By implanting impurities, an N-type diffusion region 22 corresponding to the photodiode is formed. Subsequently, a series of ion implantation is performed for source / drain formation of CMOS transistors. That is, first, a low concentration ion implantation is performed, an oxide film spacer 26 is formed on the sidewall of the gate pattern 20, and then a high concentration ion implantation is performed. Only a high concentration of ion implantation proceeds to the floating diffusion (FD) region 28 of the transfer transistor, thereby reducing the overlap capacitance between the gate electrode 16 and the FD 28 of the transfer transistor. Thereafter, a mask pattern (not shown) is formed to expose the active region in which the photodiode 22 is formed. Then, the Po type diffusion region 24 is formed by implanting ions into the active region using the mask pattern as an ion implantation mask.

In the general image sensor described above, the Rp of the Po-type diffusion region 24 formed on the surface of the photodiode 22 is determined according to the limitation of implant equipment. Here, Rp means the depth of the highest concentration point in the region 24 in which the impurity ions are implanted. In general, if proceeding to the subsequent thermal process, Rp is 0.1㎛ level. As a result, the Po diffusion region 24 may not only reduce the saturation level by invading the N- region of the photodiode 22 but also deteriorate the characteristics of the short wavelength blue that generates electrons on the surface. have

The technical problem to be achieved by the present invention is to form a diffusion region formed on the top of the photodiode thinner than the diffusion region of the general image sensor, an image sensor that can improve the saturation level and short-wavelength characteristics and its manufacture To provide a way.

According to an aspect of the present invention, there is provided an image sensor including a gate pattern formed on an upper portion of a first conductive semiconductor substrate, a second conductive photodiode formed on the semiconductor substrate on one side of the gate pattern, and a photodiode of the photodiode. It is preferable that it is formed in the surface, and is comprised from the 1st conductivity type 1st diffusion region which has a thickness below a threshold value.

According to another aspect of the present invention, there is provided a method of manufacturing an image sensor, including forming a gate pattern on an upper portion of a first conductive semiconductor substrate, and forming a second conductive photodiode using the gate pattern as a mask. Forming an insulating film on the entire upper surface of the semiconductor substrate including a gate pattern and a photodiode, forming a first photoresist pattern on the upper portion of the insulating film to open a portion of the insulating film on the photodiode; It is preferable to form a first conductivity type first diffusion region by implanting first conductivity type impurity ions into the photodiode using the first photoresist pattern as an ion implantation mask.

The image sensor and the method of manufacturing the same according to the present invention form a diffusion region on the surface of the photodiode by performing an ion implantation process when the spacer material is covered in the process of forming the spacer. A thinner diffusion region can be formed, which has the effect of improving the saturation level and allowing the photodiode region to be formed to the maximum, thereby improving the short blue characteristic.

Hereinafter, an image sensor according to an embodiment of the present invention will be described with reference to the accompanying drawings.

2 is a diagram illustrating a layout of unit pixels of a CMOS image sensor according to an exemplary embodiment of the present invention.

As illustrated in FIG. 2, the unit pixel 30 includes an active area defined by an isolation region in which an isolation layer is formed. Gate electrode 42 of transfer transistor 40, gate electrode 52 of reset transistor 50, gate electrode 62 of drive transistor 60, and select transistor The gate electrode 72 of 70 is disposed in a form crossing the upper portion of the active region, respectively. Reference numerals FD and PD denote floating portion and photodiode portions, respectively.

3 is a cross-sectional view of an image sensor according to an exemplary embodiment of the present invention, which is taken along a line A-A of FIG. 2 and illustrates a photodiode portion and a transfer transistor of a unit pixel.

The layout shown in FIG. 2 is an exemplary diagram for better understanding of the present invention, and the present invention is not limited thereto.

2 and 3, the first conductive semiconductor layer 100 having a high concentration is formed on the first conductive semiconductor substrate 100 having a high concentration. In order to define an active region of the semiconductor substrate 100, an isolation layer 104 is formed on a portion of the epi layer 102 for the isolation region of the semiconductor substrate 100.

In this case, the gate pattern 110 is formed on the epitaxial layer 102 for the transfer transistor 40. The gate pattern 110 includes a gate electrode 106 and a gate insulating film 108. As the conductive film for the gate electrode 106, any one or more of a doped polysilicon film or various kinds of silicide films such as tungsten silicide, titanium silicide, tantalum silicide, molybdenum silicide, or the like may be used.

The spacer 130 is further formed on the side of the gate pattern 110.

The second conductivity type photodiode 112 is formed in the epi layer 102 of the semiconductor substrate 100 on one side of the gate pattern 110.

According to an embodiment of the present invention, the first conductivity type first diffusion region 114 is formed on the surface of the photodiode 112. The first conductivity type first diffusion region 114 has a thickness less than or equal to a threshold. According to the present invention, the threshold may be 0.02 μm to 0.1 μm.

According to another embodiment of the present invention, in addition to the first conductivity type first diffusion region 114, the first conductivity type second diffusion region 116 is in contact with the first diffusion region 114 and the photodiode 112. It is formed on the surface of the. Here, the width of the second diffusion region 116 is greater than the width of the first diffusion region 114.

Although the second diffusion region 116 shown in FIG. 3 is formed deeper than the first diffusion region 114, the present invention is not limited thereto. That is, the depth d2 of the second diffusion region 116 may be smaller than or equal to the depth d1 of the first diffusion region 114.

Hereinafter, a method of manufacturing an image sensor according to an embodiment of the present invention will be described with reference to the accompanying drawings.

4A to 4D show cross-sectional views of a method of manufacturing an image sensor according to an exemplary embodiment of the present invention.

Referring to FIG. 4A, the first conductive epitaxial layer 102 having a low concentration is formed on the first conductive semiconductor substrate 100 having a high concentration.

Subsequently, the device isolation layer 104 defining the active region and the device isolation region is formed on the epi layer 102 for the device isolation region of the first conductivity-type semiconductor substrate 100. Here, the device isolation layer 104 is illustrated as being formed by a shallow trench isolation (STI) process, but may also be formed by a LOCOS (LOCal Oxidation of Silicon) process. Since the process of forming the device isolation film 104 is common, a detailed description thereof will be omitted.

Thereafter, the gate pattern 110 for the transfer transistor 40 is formed in the active region on the epitaxial layer 102 of the first conductivity type semiconductor substrate 100. For example, a gate insulating layer (not shown) and a polysilicon layer (not shown) are formed on the substrate 100, and the gate insulating layer and the polysilicon layer are patterned by a photolithography and etching process to form a gate insulating layer. 108 and the gate electrode 106 can be formed, respectively. In this case, gate patterns of the reset transistor 50, the drive transistor 60, and the select transistor 70 shown in FIG. 2 are also formed.

Subsequently, as shown in FIG. 4B, the second conductivity type impurity ions are implanted using the gate pattern 110 and an ion implantation mask (not shown) to form the second conductivity type photodiode 112. . The ion implantation mask has a form in which an area in which the photodiode 112 is to be formed is opened.

Thereafter, a high concentration of ion implantation is performed to form a floating diffusion region (FD) 120 on one side of the gate pattern 110.

Thereafter, as illustrated in FIG. 4C, an insulating layer 130A is formed on the entire upper surface of the first conductive semiconductor substrate 100 including the gate pattern 110 and the photodiode 112. The insulating film 130A may be an oxide film and may be formed to a thickness of 500 kV to 1500 kV.

According to the first embodiment of the present invention, a first photoresist pattern 140 is formed on the insulating layer 130A to open a portion where the photodiode 112 is formed. Thereafter, using the first photoresist pattern 140 as an ion implantation mask, the first conductivity type impurity ions are implanted 150 into the photodiode 112 to form the first conductivity type first diffusion region 114. . For example, the impurity ions implanted to form the first conductivity type first diffusion region 114 are boron, the thickness of the insulating film 130A is 500 kW to 1500 kW, and the energy to be implanted 150 is 10 KeV. To 50 KeV. Here, according to the present invention, it can be seen that the insulating film 130A shields the ions implanted to the surface of the photodiode 112 to some extent in the ion implantation process for forming the first diffusion region 114. . Therefore, the first diffusion region 114 may be formed to have a thickness d3 that is thinner than the general case. For example, the Rp of the first diffusion region 114 formed in the present invention may be 0.02 μm to 0.1 μm or less.

Here, when the thickness of the insulating layer 130A is too thick, the first diffusion region 114 may be formed too thin, so that Rp may be adjusted by increasing the energy of the ion implantation 150.

However, instead of increasing the energy, according to the second embodiment of the present invention, before forming the first photoresist pattern 140 on the insulating film 130A, a blanket etching of the insulating film 130A is performed. After the thickness of the insulating layer 130A is reduced, the first photoresist pattern 140 may be formed on the insulating layer 130A. For example, the thickness of the insulating layer 130A may be reduced by 30% to 70% by the blanket etching. Thereafter, the first conductivity type impurity ions are implanted into the photodiode 112 using the first photoresist pattern 130A as an ion implantation mask to form the first conductivity type first diffusion region 114.

After performing the above-described first or second embodiment, the first photoresist pattern 140 shown in FIG. 4C is removed through an ashing and stripping process. Thereafter, as illustrated in FIG. 4D, the insulating layer 130A is blanket etched to reduce the thickness of the insulating layer 130A. For example, the thickness of the insulating layer 130A may be reduced by 30% to 70% by the blanket etching.

Hereinafter, although subsequent steps of the manufacturing method of the image sensor according to the present invention will be described with reference to the above-described first embodiment, the same applies to the above-described second embodiment.

Thereafter, as shown in FIG. 4D, a second photoresist pattern 160 is formed on the etched insulating layer 130B to open a portion where the photodiode 112 is formed. Thereafter, the first conductivity type impurity ions are implanted 170 into the photodiode 112 using the second photoresist pattern 160 as an ion implantation mask to form the first conductivity type second diffusion region 116. Therefore, the width of the second diffusion region 116 formed by ion implantation after the blanket etching of the insulating film 130A is greater than the width of the first diffusion region 114 formed by ion implantation before performing the blanket etching ( As wide as ΔW).

Here, as the thickness of the insulating layer 130A is reduced (d3-d4), the energy for implanting impurity ions 170 to form the first conductivity type second diffusion region 116 is the first conductivity type first diffusion. It may be less than the energy for implanting impurity ions 150 to form region 114. This is because the thickness of the insulating film 130B which functions as a shield in ion implantation is further reduced. For example, before reducing the thickness of the insulating layer 130A, when the energy of implanting the impurity ions to form the first conductivity type first diffusion region 114 is 10 KeV to 50 KeV, the impurity may be less than this energy. Ions may be implanted 170.

After forming the first or second diffusion region 114 or 116 described above, the dopant is removed by removing the first or second photoresist pattern 140 or 160 and then heat-treating it in a nitrogen atmosphere at about 900 ° C. for 20 minutes. Can spread them.

Thereafter, after removing the second photoresist pattern 160, the spacer 130 is completed by blanket etching the insulating layer 130B. In this case, since the thickness of the insulating layer 130B is reduced by etching, the spacer 130 may be completed by secondly forming an insulating layer (not shown) on the insulating layer 130B and then etching the blanket.

According to the image sensor and the manufacturing method thereof according to the present invention described above, the first conductive doping profile is formed stepwise by the first and second diffusion regions 114 and 116 on the upper surface of the photodiode 112. Able to know.

As a result, the first conductivity type first and second diffusion regions 118 shown in FIG. 3 have a depth thinner than the depth of the diffusion region 24 shown in FIG. 1. This is because the insulating films 130A and 130B serve as shields for ion implantation when the first and second diffusion regions 114 and 116 are formed.

Since the other parts of the image sensor that are not described in the above description are well known matters, a description of the forming process for them is omitted. In addition, the aforementioned first conductivity type may be P type, and the second conductivity type may be N type and vice versa.

The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

1 shows a cross-sectional view of a general image sensor.

2 is a diagram illustrating a layout of unit pixels of a CMOS image sensor according to an exemplary embodiment of the present invention.

3 is a cross-sectional view of an image sensor according to an exemplary embodiment of the present invention.

4A to 4D show cross-sectional views of a method of manufacturing an image sensor according to an exemplary embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS

100 semiconductor substrate 102 epi layer

104: device isolation layer 110: gate pattern

112: photodiode 120: floating diffusion region

130: spacer

Claims (12)

A gate pattern formed on the first conductive semiconductor substrate; A second conductivity type photodiode formed on the semiconductor substrate at one side of the gate pattern; And And a first conductivity type first diffusion region formed on a surface of the photodiode and having a thickness less than or equal to a threshold value. The image sensor of claim 1, wherein the threshold is 0.02 μm to 0.1 μm. The image sensor of claim 1, wherein the image sensor An isolation layer formed on the semiconductor substrate to define an active region; And And a spacer formed at a side of the gate pattern. The image sensor of claim 1, wherein the image sensor And a first conductivity type second diffusion region having a width greater than that of the first diffusion region and formed on a surface of the photodiode in contact with the first diffusion region. Forming a gate pattern on the first conductive semiconductor substrate; Forming the second conductivity type photodiode using the gate pattern as a mask; Forming an insulating film on the entire upper surface of the semiconductor substrate including the gate pattern and the photodiode; Forming a first photoresist pattern on the photodiode to open a portion of the insulating film on the photodiode; And And implanting first conductivity type impurity ions into the photodiode using the first photoresist pattern as an ion implantation mask to form a first conductivity type first diffusion region. . The method of claim 5, wherein the manufacturing method of the image sensor And blanket etching the insulating film to reduce the thickness of the insulating film. The method of claim 6, wherein the blanket etching of the insulating layer is performed before forming the first photoresist pattern. The method of claim 6, wherein the manufacturing method of the image sensor After blanket etching the insulating layer, forming a second photoresist pattern on the etched insulating layer to open a portion where the photodiode is formed; And Implanting first conductivity type impurity ions into the photodiode using the second photoresist pattern as an ion implantation mask to form a first conductivity type second diffusion region, The blanket etching of the insulating layer is performed after forming the first conductivity type first diffusion region. The method of claim 6, wherein the thickness of the insulating layer is reduced by 30% to 70%. The method of claim 5 or 8, wherein the energy of implanting the impurity ions to form the first conductivity type first diffusion region is 10KeV to 50KeV. The method of claim 10, wherein as the thickness of the insulating layer is reduced, the energy of implanting the impurity ions to form the first conductivity type first diffusion region is increased to form the first conductivity type second diffusion region. A method of manufacturing an image sensor, characterized in that less than energy for implanting impurity ions. The method of claim 8, wherein the width of the second diffusion region is wider than the width of the first diffusion region.
KR1020080111567A 2008-11-11 2008-11-11 Image sensor and method for manufacturing the sensor KR20100052729A (en)

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