KR20100048631A

KR20100048631A - Probe unit for bonding probe and probe bonding method using the same

Info

Publication number: KR20100048631A
Application number: KR1020080107885A
Authority: KR
Inventors: 한정섭
Original assignee: 윌테크놀러지(주)
Priority date: 2008-10-31
Filing date: 2008-10-31
Publication date: 2010-05-11

Abstract

PURPOSE: A probe unit for bonding a probe and a method for bonding the probe using the same are provided to confirm the location of the pad on a substrate by forming an opening on a conductive plate. CONSTITUTION: A probe(100) is formed on a conductive plate(200). The probe is cantilever type which is based on a conductive material. The conductive plate includes the probe, a plate unit(210) and an island shape of opening(220). The opening passes through the plate unit in order to correspond to a pad. The probe includes an interconnection unit. The interconnection unit is located in the opening.

Description

Probe Bonding Probe Unit and Probe Bonding Method Using Them {PROBE UNIT FOR BONDING PROBE AND PROBE BONDING METHOD USING THE SAME}

The present invention relates to a probe bonding probe unit, and more particularly, to a probe bonding probe unit used when bonding a probe to a substrate and a probe bonding method using the same.

In general, semiconductor devices have a fabrication process of forming contact pads for circuit patterns and inspections on a wafer, and an assembly process of assembling wafers having circuit patterns and contact pads into respective semiconductor chips. It is manufactured through.

An inspection process is performed between the fabrication process and the assembly process to inspect the electrical characteristics of the wafer by applying an electrical signal to the contact pads formed on the wafer. This inspection process is performed to inspect a defect of a wafer and to remove a portion of a wafer in which a defect occurs during an assembly process.

In the inspection process, inspection equipment called a tester for applying an electrical signal to a wafer and probe equipment for performing an interface function between the wafer and the tester are mainly used. Among them, the probe card includes a printed circuit board that receives an electrical signal applied from a tester and a plurality of probes in contact with contact pads formed on the wafer.

In recent years, as the demand for high integrated chips increases, circuit patterns formed on the wafer by the fabrication process and contact pads connected with the circuit patterns are highly integrated. That is, the spacing between neighboring contact pads is very narrow, and the size of the contact pad itself is also finely formed. As a result, since the probe of the probe card used in the inspection process must be in contact with the contact pad, the distance between neighboring probes corresponding to the contact pad must be formed very narrowly, and the size of the probe itself must also be finely formed.

Hereinafter, a method of manufacturing a conventional probe card will be described with reference to FIGS. 1 to 3.

1 to 3 are diagrams for explaining a conventional method of manufacturing a probe card.

First, as shown in FIG. 1, an opening 11 is formed in a sacrificial substrate 10 using photolithography technology, and a probe 20 is formed by filling a conductive material in the opening 11.

Next, as shown in FIG. 2, the probe card is completed by bonding each probe 20 to the pad 31 formed on the substrate 30.

The conventional method of manufacturing a probe card as described above bonds each probe 20 to a pad 31 formed on the substrate 30, thereby increasing the time for bonding each probe 20. FIG. This increases the manufacturing time and manufacturing cost.

Hereinafter, another conventional method of manufacturing a probe card for solving the above problems will be described.

Next, as shown in FIG. 3, the probe 20 formed on the sacrificial substrate 10 is bonded to the pad 31 formed on the substrate 30.

Next, as shown in FIG. 2, the probe card is completed by separating the sacrificial substrate 10 from the probe 20 using a wet etching process.

As described above, another conventional method of manufacturing a probe card uses a photolithography technique used to form a pattern of a semiconductor, so that the size of the probe 20 itself can be finely formed, and the interval between neighboring probes 20 can be achieved. It can also be formed in the printed circuit board 30 very narrowly.

However, according to another conventional method of manufacturing a probe card, when the plurality of probes 20 are collectively bonded to the pad 31 formed on the substrate 30, the probes 20 are formed on the substrate 30 to be bonded. Since the position of the pad 31 is difficult to identify, a defect may occur in which some probes 20 or the entire probes 20 are not aligned correctly on the pads 31. In this case, after bonding the plurality of probes 20 to the substrate 30, the alignment state of the plurality of probes 20 is inspected by an additional process to remove the probes 20 when the alignment state is poor. The problem arises in that the alignment must be correctly bonded again. This is a factor that increases the manufacturing period and manufacturing cost.

In addition, another conventional method of manufacturing a probe card has a problem in that the wet etching process takes a long time due to the thickness of the sacrificial substrate 10 when the sacrificial substrate 10 is separated from the probe 20.

In addition, another conventional method of manufacturing a probe card, when bonding the probe 20 to the pad 31 of the substrate 30, the probe 20 and the substrate 30 located in the center region of the sacrificial substrate 10 Since only the heat can be used as an energy source because the laser cannot be irradiated between the pads 31, the physical or thermal stress acts on the probe 20 already fabricated on the sacrificial substrate 10. There was a problem that damage occurs to the probe 20.

In addition, another conventional method of manufacturing a probe card uses the heat to bond the probe 20 to the pad 31 of the substrate 30, whereby the probe 20 and the substrate positioned in the center region of the sacrificial substrate 10 are used. Since the heat transfer for bonding of the probe 20 is less between the pad 31 of the 30 between the probe 20 located at the edge region of the sacrificial substrate 10 and the pad 31 of the substrate 30. In addition, the entire probe 20 is not uniformly bonded to the substrate 30 and the bonding time for bonding the entire probe 20 to the substrate 30 increases, thereby increasing manufacturing time and manufacturing cost.

One embodiment of the present invention is to solve the above-described problems, an object of the present invention to provide a probe bonding probe unit and a probe bonding method using the same can reduce the manufacturing time and manufacturing cost.

In addition, an object of the present invention is to provide a probe bonding probe unit capable of identifying a position of a pad formed on a substrate and a probe bonding method using the same when a plurality of probes are collectively bonded to a substrate.

Another object of the present invention is to provide a probe bonding probe unit that can use various energy sources for probe bonding, and a probe bonding method using the same.

As a technical means for achieving the above-described technical problem, the first aspect of the present invention is a probe bonding probe unit used when bonding a probe to a substrate on which a pad is formed, the probe and a portion of the probe is seated And a plate formed of a conductive material and a conductive plate formed through the plate to correspond to the pad of the substrate, the conductive plate including an opening covered by a portion of the probe. do.

The probe includes an interconnect element, which may be located at a portion within the opening.

The opening may be formed in the plate portion in the form of an island.

According to another aspect of the present invention, there is provided a method of bonding a probe to a substrate on which a pad is formed, the method comprising: (a) the probe and a portion of the probe on which the probe is seated; Forming a probe unit for probe bonding, the probe unit including a conductive plate formed to penetrate through the plate portion, the conductive plate including an opening partially covered by another portion of the probe, and (b) on the pad of the substrate. Forming a substrate interconnection element, (c) positioning the probe bonding probe unit on the substrate such that at least a portion of the substrate interconnection element is located in the opening of the probe bonding probe unit to contact the probe (D) bonding the probe to the substrate interconnect element and (e) the plate portion It provides a bonding method of the probe comprising the step of separating from the probe.

Step (d) may be performed by irradiating a laser between the substrate interconnect element and the probe through the opening.

Step (d) may be performed by applying heat between the substrate interconnect element and the probe through the opening.

The method may further include forming a conductive paste on the substrate interconnect element to be positioned between the substrate interconnect element and the probe.

The step (e) may be performed using a wet etching process.

In addition, a third aspect of the present invention provides a method of bonding a probe including an interconnecting element to a pad-formed substrate, the method comprising: (a) the probe and a plate portion on which a portion of the probe is seated and made of a conductive material; A conductive plate formed through the plate portion so as to correspond to the pad of the substrate, the conductive plate including an opening that is partially covered by another portion of the probe, wherein an interconnection element of the probe is located at a portion within the opening; Forming a probe unit for bonding the probe, (b) positioning the probe bonding probe unit on the substrate such that the interconnection element of the probe contacts a pad of the substrate, and (c) Bonding the interconnection element of the probe to the pad and (d) the plate portion to the probe It provides the bonding method of the probe, including the step of separating.

Step (c) may be performed by irradiating a laser between the interconnect element of the probe and the pad of the substrate through the opening.

Step (c) may be performed by applying heat between the interconnect element of the probe and the pad of the substrate through the opening.

And forming a conductive paste on the pad of the substrate to be positioned between the interconnect element of the probe and the pad of the substrate.

The step (d) may be performed using a wet etching process.

According to one of the problem solving means of the present invention described above, by including the probe and the conductive plate, there is a technical effect that can reduce the manufacturing time and manufacturing cost.

In addition, since the conductive plate includes an opening, when the plurality of probes are collectively bonded to the substrate, there is a technical effect of confirming the position of the pad formed on the substrate.

In addition, since the conductive plate includes an opening, there is a technical effect that various energy sources can be used for probe bonding.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Throughout the specification, when a part is located "on" with another part, this includes not only when a part is in contact with another part, but also when there is another part between the two parts. In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

Hereinafter, a probe bonding probe unit, a method of manufacturing a probe bonding probe unit, and a probe bonding method using a probe bonding probe unit will be described with reference to FIGS. 4 to 16.

First, a probe bonding probe unit according to a first embodiment of the present invention will be described with reference to FIGS. 4 and 5.

4 is a perspective view illustrating a probe bonding probe unit according to a first exemplary embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along the line VV of FIG. 4.

4 and 5, the probe unit for probe bonding according to the first embodiment of the present invention includes a probe 100 and a conductive plate 200.

The probe 100 is a cantilever type made of a conductive material and serves to contact an object such as a semiconductor wafer during an inspection process. A plurality of probes 100 are formed on the conductive plate 200, and are formed at positions corresponding to the pads 2100 of the substrate 2000 to which the probes 100 are bonded during the bonding process described later. The probe 100 includes a beam part 110, an extension part 120, and a contact part 130.

The beam unit 110 extends in a direction parallel to the plate surface direction of the conductive plate 200. One portion of the beam portion 110 is seated on the plate portion 210 of the conductive plate 200 to be described later, and the other portion of the beam portion 110 to cover a portion of the opening 220 of the conductive plate 200 to be described later. It is floating on the opening 220 of the conductive plate 200. The beam unit 110 helps the contact unit 130 to elastically contact the contact pads formed on the inspected object such as a semiconductor wafer during the inspection process. The extension part 120 is positioned by bending from an end of the beam part 110 opposite to the other part of the beam part 110.

The extension part 120 extends from the beam part 110 and faces the conductive plate 200 with the beam part 110 therebetween. The contact portion 130 is positioned extending from the central region of the extension portion 120.

The contact part 130 protrudes from the center area of the extension part 120, and directly contacts the contact pads formed on the inspected object such as a semiconductor wafer during the inspection process. The contact portion 130 elastically contacts the contact pads formed on the inspection object such as the semiconductor wafer by the beam portion 110. The contact portion 130 has a thickness thinner than the extension portion 120.

The conductive plate 200 has a plate shape and includes a plate portion 210 and an opening 220.

The plate portion 210 is made of a conductive material, and a plurality of probes 100 are seated. The plate portion 210 may have a thickness substantially the same as the beam portion 110 of the probe 100 or thinner than the beam portion 110. An opening 220 is formed through the plate 210.

The opening 220 is formed by penetrating the plate 210 at a position corresponding to the pad 2100 of the substrate 2000 to which the probe 100 is bonded during a bonding process to be described later. The openings 220 are formed in plural, and neighboring openings 220 are formed in an island form in which the openings 220 are spaced apart from each other. The opening part 220 is partially covered by another part of the beam part 110, and the other part of the opening part 220 which is not covered by the other part of the beam part 110 is exposed to the outside.

In another embodiment, the plate portion 210 may have a larger thickness than the beam portion 110 of the probe 100, and the probe 100 may be a vertical type that does not include the beam portion 110. .

Hereinafter, a method of manufacturing the probe bonding probe unit according to the first embodiment of the present invention will be described with reference to FIGS. 5 to 12.

6 is a flowchart illustrating a method of manufacturing a probe bonding probe unit according to a first embodiment of the present invention, and FIGS. 7 to 12 illustrate a method of manufacturing a probe unit according to a first embodiment of the present invention. It is a cross section.

First, as shown in FIGS. 6 to 9, the conductive plate 200 including the plate portion 210 and the recessed portion 230 is formed (S110).

Hereinafter, a process of forming the conductive plate 200 including the plate portion 210 and the recessed portion 230 will be described in detail.

First, as shown in FIG. 7, a sacrificial substrate 1100 made of a plate-like insulating material such as a silicon wafer is prepared. The top surface of the sacrificial substrate 1100 is formed flat using a mechanical or chemical polishing process.

Next, an adhesive layer 1200 including a conductive material such as titanium (Ti) and a conductive layer 1300 including a conductive material such as copper (Cu) using a sputtering process or the like on the sacrificial substrate 1100. To form sequentially. The adhesive layer 1200 serves to help adhesion between the conductive layer 1300 and the sacrificial substrate 1100.

Next, when the light is received on the conductive layer 1300 by using a spin coating process or a coating process on the conductive layer 1300, the developing process is a positive type that melts in the developer or is not developed when the light is received. A substrate photoresist layer 1400 is formed of a negative photoresist material that is soluble in a developer.

Next, as shown in FIG. 8, a mask having an image corresponding to the recess 230 to be formed later on the substrate photoresist layer 1400 is aligned, and through the mask to the substrate photoresist layer 1400. After exposing the substrate photoresist layer 1400 by irradiating ultraviolet rays or the like, and then developing the exposed substrate photoresist layer 1400 using a developer, the substrate photo having the protrusion pattern 1451 corresponding to the recessed portion 230. The resist pattern 1450 is formed. In this case, the protruding pattern 1451 is formed in an island shape spaced apart from the adjacent protruding pattern 1451.

Next, as shown in FIG. 9, the conductive layer 1300 is positioned between the adjacent protruding patterns 1451 using a plating process such as an electrolytic plating process using the conductive layer 1300, and at the same time, the protruding pattern 1451. The conductive layer 1300 is grown to surround the sidewalls of the conductive layer 1300 to form the conductive plate 200 having the recessed portion 230 and the plate portion 210. In this case, when the conductive plate 200 protrudes onto the substrate photoresist pattern 1450 due to the plating process, the conductive plate 200 protruding onto the substrate photoresist pattern 1450 may be chemically or physically polished. Polishing is performed to form a plate-shaped conductive plate 200. The plate portion 210 of the conductive plate 200 grown from the conductive layer 1300 surrounds the sidewall of the protruding pattern 1451, and the recessed portion 230 of the conductive plate 200 is adjacent to the protruding pattern 1451. The recesses 230 are formed in an island shape spaced apart from each other, and are formed in a shape recessed from the plate portion 210.

By the above process, the conductive plate 200 including the plate portion 210 and the depression portion 230 is formed.

Next, as shown in FIG. 10, the probe 100 is formed (S120).

Hereinafter, a process of forming the probe 100 including the beam part 110, the extension part 120, and the contact part 130 will be described in detail.

First, a photoresist layer made of a photoresist material is formed on the conductive plate 200, and then the first recessed pattern 1551 corresponding to the beam part 110 of the probe 100 to be formed later on the photoresist layer and The mask having the corresponding image is aligned, the photoresist layer is exposed by irradiating ultraviolet rays or the like to the photoresist layer through the mask, and then the exposed photoresist layer is developed using a developer to form the beam part of the probe 100 ( A first probe photoresist pattern 1550 having a first recessed pattern 1551 corresponding to 110 is formed. At this time, a part of the conductive plate 200 is exposed by the first recessed pattern 1551. Thereafter, the beam portion 110 of the probe 100 is formed by filling the first recessed pattern 1551 with a conductive material by using a plating process such as an electrolytic plating process using the conductive plate 200. In this case, when the conductive material protrudes onto the first probe photoresist pattern 1550 due to the plating process, the conductive material protruding onto the first probe photoresist pattern 1550 may be polished using a chemical or physical polishing process. The beam part 110 of the probe 100 is formed. The beam part 110 of the probe 100 is formed such that one part is seated on the plate part 210 and the other part covers a part of the depression 230 on the protruding pattern 1451 of the substrate photoresist pattern 1450. do.

Next, after forming a photoresist layer made of a photoresist material on the first probe photoresist pattern 1550, a second depression corresponding to the extension 120 of the probe 100 to be later formed on the photoresist layer is formed. The mask having the image corresponding to the pattern 1651 is aligned, the photoresist layer is exposed by irradiating ultraviolet rays or the like to the photoresist layer through the mask, and then the exposed photoresist layer is developed by using a developer. A second probe photoresist pattern 1650 having a second recessed pattern 1651 corresponding to the extension 120 of 100 is formed. At this time, a part of the beam part 110 of the probe 100 is exposed by the second recessed pattern 1651. Thereafter, the extension part 120 of the probe 100 is formed by filling a second conductive pattern 1651 with a conductive material by using a plating process such as an electrolytic plating process using the conductive plate 200 and the beam part 110. . In this case, when the conductive material protrudes onto the second probe photoresist pattern 1650 due to the plating process, the conductive material protruding onto the second probe photoresist pattern 1650 may be polished using a chemical or physical polishing process. An extension 120 of the probe 100 is formed.

Next, after forming a photoresist layer made of a photoresist material on the second probe photoresist pattern 1650, a third recessed pattern corresponding to the contact portion 130 of the probe 100 to be formed later on the photoresist layer. Aligning a mask having an image corresponding to 1175 1, irradiating a photoresist layer with ultraviolet rays or the like through the mask to expose the photoresist layer, and then developing the exposed photoresist layer using a developer to develop a probe 100. The third probe photoresist pattern 1750 having the third recessed pattern 1751 corresponding to the contact portion 130 of FIG. In this case, a part of the extension part 120 of the probe 100 is exposed by the third recessed pattern 1751. Thereafter, the contact portion of the probe 100 is filled with a conductive material in the third recessed pattern 1175 using a plating process such as an electroplating process using the conductive plate 200, the beam part 110, and the extension part 120. 130). In this case, when the conductive material protrudes onto the third probe photoresist pattern 1750 due to the plating process, the conductive material protruding onto the third probe photoresist pattern 1750 is polished using a chemical or physical polishing process. The contact portion 130 of the probe 100 is formed.

Through the above process, the probe 100 including the beam part 110, the extension part 120, and the contact part 130 is formed.

Next, as shown in FIGS. 10 to 12 and 5, the opening 220 is formed (S130).

Hereinafter, the process of forming the opening portion 220 will be described in detail.

First, as shown in FIG. 10, a protective layer 1800 made of a photoresist material, a film, a resin, or the like is formed on the third probe photoresist pattern 1750 to cover the contact portion 130 of the probe 100. Thus, the probe 100 is not exposed to the outside.

Next, as shown in FIG. 11, the sacrificial substrate 1100 is polished using a physical or chemical polishing process so that the thickness of the sacrificial substrate 1100 is thinned while the probe 100 is covered by the protective layer 1800. . When the sacrificial substrate 1100 is polished, damage to the probe 100 may be prevented by the protective layer 1800 covering the probe 100.

Next, the substrate photoresist pattern 1450, the first probe photoresist pattern 1550, the second probe photoresist pattern 1650, and the third probe photoresist pattern 1750 surrounding the probe 100 and the conductive plate 200. ) Is removed from the probe 100 and the conductive plate 200 using an ashing process or a lift off process, and the protective layer 1800 covering the contact portion 130 of the probe 100 is lifted. It removes from the probe 100 using an off process.

Next, as illustrated in FIG. 12, the adhesive layer 1200 and the thinned sacrificial substrate 1100 are removed from the conductive plate 200 using a wet etching process. Since the sacrificial substrate 1100 is thinned by the polishing process, the sacrificial substrate 1100 and the adhesive layer 1200 may be removed from the conductive plate 200 using a wet etching process in a faster time.

By the above process, the portion surrounding the probe 100 and the conductive plate 200 is removed.

Next, as shown in FIG. 5, through the conductive plate 200 corresponding to the recessed portion 230 of the conductive plate 200 by using a wet etching process or a pressing process using a tool to penetrate the plate 210. The opening 220 is formed.

The probe according to the first embodiment of the present invention includes the conductive plate 200 and the probe 100 including the plate portion 210 and the opening 220 at the same time as the opening 220 is formed. A bonding probe unit is manufactured.

Hereinafter, a probe bonding method using the probe bonding probe unit according to the first embodiment of the present invention will be described with reference to FIGS. 13 to 16.

13 is a flowchart illustrating a probe bonding method using the probe bonding probe unit according to the first embodiment of the present invention, and FIGS. 14 to 16 are probes using the probe bonding probe unit according to the first embodiment of the present invention. It is sectional drawing for demonstrating the bonding method.

First, as shown in FIGS. 13 and 14, a probe bonding probe unit is formed (S210).

Specifically, the probe bonding probe unit is formed using the method for manufacturing the probe bonding probe unit according to the first embodiment of the present invention described above.

Next, the substrate interconnection element 400 is formed on the pad 2100 of the substrate 2000 (S220).

Specifically, tin (Sn) or tin alloy (Au) is formed on a pad 2100 formed on a substrate 2000, which is a space trannsformer or a printed circuit board, by using a plating process or a screen printing process. -Form a conductive paste 300 made of -Sn, Pb-Sn, and the like, position the substrate interconnect element 400 on the conductive paste 300, and then heat or laser or the like to the conductive paste 300 A circle is applied to form the substrate interconnection element 400 on the pad 2100 of the substrate 2000 of the substrate 2000.

In another embodiment, after forming a photoresist pattern having exposed portions exposing the pads 2100 on the substrate 30 using a photolithography process on the pads 2100 of the substrate 2000, the pads 2100. A plating process using an interconnect may be performed to fill the exposed portion of the photoresist pattern to form the substrate interconnection element 400 on the pad 2100 of the substrate 2000.

Next, the conductive paste 300 is formed on the substrate interconnection element 400 (S230).

Next, as shown in FIG. 15, the probe bonding probe unit is positioned on the substrate 2000 (S240).

Specifically, after the plurality of probes 100 align the probe bonding probe units seated on the plate portion 210 of the conductive plate 200 on the substrate 2000, the probe bonding probe units may be placed on the substrate 2000. The probe bonding probe unit is positioned on the substrate 2000. At this time, the positions of the pads 2100 and the substrate interconnection elements 400 formed on the substrate 2000 through the openings 220 of the conductive plate 200 are checked to determine the positions of the substrates with the conductive paste 300 interposed therebetween. The other end of the beam portion 110 of the probe 100 is positioned on the interconnection element 400 to accurately position the probe unit for probe bonding on the substrate 2000 so as to contact the conductive paste 300. The other end of the beam portion 110 of the probe 100 is in contact with the conductive paste 300 formed on the substrate interconnection element 400 while a portion of the substrate interconnection element 400 is an opening of the conductive plate 200. 220). Since the probe 100 contacts the substrate interconnect element 400 while checking the position of the pad 2100 and the substrate interconnect element 400 formed in the substrate 2000 through the opening 220, the probe 100 Is exactly aligned on pad 2100.

Next, the probe 100 is bonded to the substrate interconnection element 400 (S250).

Specifically, laser or heat, etc., between the beam portion 110 of the probe 100 and the substrate interconnection element 400 formed on the pad 2100 of the substrate 2000 through the opening 220 of the conductive plate 200. Various sources of energy are applied to raise the Gibbs free energy of the conductive paste 300 positioned between the beam portion 110 of the probe 100 and the substrate interconnect element 400. At this time, it is desirable to use heat as the energy source to prevent damage to the substrate interconnect element 400 due to the energy source. Increasing the Gibbs free energy of the conductive paste 300, the enthalpy and entropy of the molecules constituting the conductive paste 300 increases, the conductive paste 300 is changed to a liquid state in an unstable state Done. Thus, the conductive paste 300 is spread over the substrate interconnect element 400 formed on the pad 2100 of the substrate 2000 to change to a stable state. Conductive paste 300 spreads over substrate interconnect element 400 while conductive paste 300 adheres to substrate interconnect element 400 formed on probe 100 and pad 2100 of substrate 2000. . That is, the probe 100 and the substrate interconnect element 400 are bonded together with the conductive paste 300 interposed therebetween. Thereafter, after the rapid change of the conductive paste 300 in the reversible direction due to the rise of the Gibbs free energy, the probe 100 is bonded to the substrate interconnect element 400. Here, the change in the reversible direction means that the material changes to a stable state. In the case of the conductive paste 300, the enthalpy and entropy of the molecules constituting the conductive paste 300 are reduced, so that the conductive paste 300 is removed from the liquid. It means to solidify.

In another embodiment, without forming the conductive paste 300, the probe is applied to the substrate interconnect element 400 by irradiating a laser through the opening 220 with the substrate interconnect element 400 and the probe 100 in contact. 100 may be bonded.

As such, an energy source can be applied between the substrate interconnect element 400 and the probe 100 through the opening 220, so that the plurality of probes 100 seated on the conductive plate 200 for a quick time. May be uniformly bonded to the substrate 2000.

Next, as shown in FIG. 16, the plate 210 is separated from the probe 100 (S260).

Specifically, the conductive plate 200 on which the probe 100 is mounted is removed from the probe 100 by using a wet etching process. Since the conductive plate 200 is formed by the growth of the conductive layer 1300, which is a conductive material, the conductive plate 200 is thin and is removed from the probe 100 by a wet etching process in a short time.

As described above, the probe bonding method using the probe bonding probe unit according to the first embodiment of the present invention is performed, and a probe card in which the probe 100 is bonded to the substrate 2000 is manufactured.

As described above, in the method of manufacturing the probe bonding probe unit, the probe bonding probe unit, and the manufacturing method using the probe bonding probe unit according to the first embodiment of the present invention, the plurality of probes 100 may be collectively disposed on the substrate 2000. When bonding to the pad 2100 formed on the substrate 2, the position of the pad 2100 formed on the substrate 2000 to which the probe 100 is bonded may be confirmed. 2000 is exactly aligned on pad 2100. This improves the reliability of the probe bonding process and reduces the manufacturing time and manufacturing cost of the probe card.

In addition, when the conductive plate 200 is separated from the probe 100, since the conductive plate 200 is thin, the conductive plate 200 is separated from the probe 100 in a short time. This reduces the manufacturing time and manufacturing cost of the probe card.

In addition, a variety of energy sources may be used for bonding the probe 100 through the openings 220 of the conductive plate 200, and energy sources may be used for bonding the probes 100 through the openings 220. The plurality of probes 100 may be uniformly bonded to the substrate 2000 for a time. As a result, damage to the probe 100 due to the bonding process is suppressed, and at the same time, a manufacturing time and a manufacturing cost of the probe card are reduced.

In addition, since the top surface of the sacrificial substrate 1100 on which the conductive plate 200 and the probe 100 are formed is polished flat, the conductive plate 200 is formed flat, and thus is mounted on the conductive plate 200. The plurality of probes 100 are formed flat to each other. As described above, since the plurality of probes 100 mounted on the conductive plate 200 are formed flat to each other, the plurality of probes 100 are bonded to the substrate 2000 flat to each other. That is, the outermost ends of the contact portions 130 of the neighboring probes 100 bonded to the substrate 2000 are positioned on the same extension line. This serves as a factor for improving the reliability of the inspection process using the probe card in which the probe 100 is bonded to the substrate 2000.

Hereinafter, a probe bonding probe unit, a method of manufacturing a probe bonding probe unit, and a probe bonding method using a probe bonding probe unit will be described with reference to FIGS. 17 to 29.

Hereinafter, only the characteristic parts distinguished from the first embodiment will be described and described, and the descriptions thereof will be omitted according to the first embodiment. In addition, in the second embodiment of the present invention, for the convenience of description, the same components will be described using the same reference numerals as in the first embodiment.

First, a probe bonding probe unit according to a second embodiment of the present invention will be described with reference to FIGS. 17 and 18.

FIG. 17 is a perspective view illustrating a probe bonding probe unit according to a second exemplary embodiment of the present invention, and FIG. 18 is a cross-sectional view taken along the line VIII-VIII of FIG. 4.

As shown in FIGS. 17 and 18, the probe bonding probe unit according to the second embodiment of the present invention includes a probe 100 and a conductive plate 200.

The probe 100 includes a beam portion 110, an extension 120, a contact 130 and an interconnection element 140.

The interconnection element 140 is bent and extends from the other end of the beam portion 110 covering a portion of the opening 220 of the conductive plate 200 and is located within the opening 220 of the conductive plate 200. The end of the interconnection element 140 is located on the same extension line as the bottom surface of the plate portion 210 of the conductive plate 200.

Hereinafter, a method of manufacturing the probe bonding probe unit according to the second embodiment of the present invention will be described with reference to FIGS. 18 to 25.

19 is a flowchart illustrating a method of manufacturing a probe bonding probe unit according to a second embodiment of the present invention, and FIGS. 20 to 25 are cross-sectional views illustrating a method of manufacturing a probe unit according to a second embodiment of the present invention. to be.

First, as shown in FIGS. 19 and 20, the conductive plate 200 including the plate portion 210 and the recessed portion 230 is formed (S210). At this time, the substrate photoresist pattern 1450 positioned in the depression 230 is separated from the conductive plate 200 so that the depression 230 of the conductive plate 200 is exposed.

Next, as shown in FIGS. 21 to 23, the probe 100 including the interconnection element 140 is formed (S220).

Hereinafter, a process of forming the probe 100 including the beam unit 110, the extension unit 120, the contact unit 130, and the interconnection element 140 will be described in detail.

First, as shown in FIGS. 21 through 23, after forming the first probe photoresist layer 1500 made of a photoresist material on the conductive plate 200, the first probe photoresist layer 1500 may be formed on the first probe photoresist layer 1500. Align the mask with the image corresponding to the first recessed pattern 1551 corresponding to the beam portion 110 and the interconnection element 140 of the probe 100 to be formed later, and through the mask a first probe photoresist layer After exposing the first probe photoresist layer 1500 to ultraviolet light by irradiating the light to the 1500, the first probe photoresist layer 1500 exposed using a developer is developed to develop the beam part 110 of the probe 100. And a first probe photoresist pattern 1550 having a first recessed pattern 1551 corresponding to the interconnect element 140. At this time, a part of the conductive plate 200 is exposed by the first recessed pattern 1551. Thereafter, a conductive material is filled in the first recessed pattern 1551 using a plating process such as an electrolytic plating process using the conductive plate 200 to form the beam part 110 and the interconnection element 140 of the probe 100. do. In this case, when the conductive material protrudes onto the first probe photoresist pattern 1550 due to the plating process, the conductive material protruding onto the first probe photoresist pattern 1550 may be polished using a chemical or physical polishing process. The beam portion 110 and the interconnection element 140 of the probe 100 are formed. The beam part 110 of the probe 100 is formed such that one part is seated on the plate part 210 and the other part covers a part of the depression 230 on the protruding pattern 1451 of the substrate photoresist pattern 1450. The interconnection element 140 of the probe 100 is formed to be bent from the other portion of the beam portion 110 and positioned within the depression 230.

Next, a second probe photoresist pattern 1650 having a second recessed pattern 1651 corresponding to the extension part 120 of the probe 100 is formed on the first probe photoresist pattern 1550.

Next, a third probe photoresist pattern 1750 having a third recessed pattern 1701 corresponding to the contact portion 130 of the probe 100 is formed on the second probe photoresist pattern 1650.

Through the above process, the probe 100 including the beam part 110, the extension part 120, the contact part 130, and the interconnection element 140 is formed.

Next, as shown in FIGS. 23 to 25 and 18, the opening 220 is formed (S330).

First, as shown in FIG. 23, a protective layer 1800 made of a photoresist material, a film, a resin, or the like is formed on the third probe photoresist pattern 1750.

Next, as shown in FIG. 24, the sacrificial substrate 1100 is polished using a physical or chemical polishing process so that the thickness of the sacrificial substrate 1100 is thinned while the probe 100 is covered by the protective layer 1800. .

Next, the substrate 100 surrounding the probe 100 and the conductive plate 200 is subjected to an etching process or lift off of the first probe photoresist pattern 1550, the second probe photoresist pattern 1650, and the third probe photoresist pattern 1750. The protective layer 1800 covering the contact portion 130 of the probe 100 is removed from the probe 100 by using a lift-off process or the like, by removing the probe 100 and the conductive plate 200 using a process or the like.

Next, as shown in FIG. 25, the adhesive layer 1200 and the thinned sacrificial substrate 1100 are removed from the conductive plate 200 using a wet etching process.

By the above process, the part surrounding the probe 100 and the conductive plate 200 is removed.

Next, as illustrated in FIG. 18, the penetrating plate 200 may be penetrated through the conductive plate 200 corresponding to the depression 230 of the conductive plate 200 using a wet etching process or a pressing process using a tool. The opening 220 is formed.

By the above process, the opening 220 is formed, and the plate part 210 and the conductive plate 200 which have the opening 220, and the probe 100 which have the interconnection element 140 of this invention are included, A probe unit for probe bonding according to the second embodiment is manufactured.

Hereinafter, a probe bonding method using the probe bonding probe unit according to the second embodiment of the present invention will be described with reference to FIGS. 26 to 29.

26 is a flowchart illustrating a probe bonding method using a probe bonding probe unit according to a second embodiment of the present invention, and FIGS. 27 to 29 are probes using a probe bonding probe unit according to a second embodiment of the present invention. It is sectional drawing for demonstrating the bonding method.

First, as illustrated in FIGS. 26 and 27, a probe bonding probe unit is formed (S410).

Specifically, the probe bonding probe unit is formed using the method for manufacturing the probe bonding probe unit according to the second embodiment of the present invention described above.

Next, the conductive paste 300 is formed on the pad 2100 of the substrate 2000 (S420).

Specifically, the conductive paste 300 made of tin (Sn) or tin alloy (Au-Sn, Pb-Sn) or the like is formed on the pad 2100 formed on the substrate 2000 by using a plating process or a screen printing process. Form.

Next, as shown in FIG. 28, the probe bonding probe unit is positioned on the substrate 2000 (S430).

Specifically, after the plurality of probes 100 align the probe bonding probe units seated on the plate portion 210 of the conductive plate 200 on the substrate 2000, the probe bonding probe units may be placed on the substrate 2000. The probe bonding probe unit is positioned on the substrate 2000. At this time, the position of the pad 2100 formed on the substrate 2000 is confirmed through the opening 220 of the conductive plate 200, and the pad 2100 of the substrate 2000 is interposed with the conductive paste 300 interposed therebetween. The probe unit for probe bonding is correctly positioned on the substrate 2000 such that the end of the interconnect element 140 of the probe 100 is positioned on and in contact with the conductive paste 300. A conductive paste 300 having the interconnect element 140 of the probe 100 formed on the pad 2100 of the substrate 2000 while checking the position of the pad 2100 formed in the substrate 2000 through the opening 220. In contact with, the probe 100 is exactly aligned on the pad 2100.

Next, the interconnection element 140 of the probe 100 is bonded to the pad 2100 of the substrate 2000 (S440).

In detail, various energy sources such as laser or heat may be applied between the interconnection element 140 of the probe 100 and the pad 2100 of the substrate 2000 through the opening 220 of the conductive plate 200. The cast free energy of the conductive paste 300 located between the interconnect element 140 of 100 and the pad 2100 of the substrate 2000 is raised. In this case, it is preferable to use heat as an energy source in order to prevent damage to the pad 2100 of the substrate 2000 due to the energy source. As a result, the probe 100 is bonded to the pad 2100 of the substrate 2000.

In another embodiment, without forming the conductive paste 300, the laser is irradiated through the opening 220 in contact with the pad 2100 of the substrate 2000 and the interconnection element 140 of the probe 100. The probe 100 may be bonded to the pad 2100 of the substrate 2000.

As described above, since the energy source may be applied between the pad 2100 and the probe 100 of the substrate 2000 through the opening 220, the plurality of probes (which are mounted on the conductive plate 200 for a short time) may be applied. 100 may be uniformly bonded to the substrate 2000.

Next, as shown in FIG. 29, the plate 210 is separated from the probe 100 (S450).

As described above, the probe bonding method using the probe bonding probe unit according to the second embodiment of the present invention is performed, and a probe card in which the probe 100 is bonded to the substrate 2000 is manufactured.

As described above, the method of manufacturing the probe bonding probe unit, the probe bonding probe unit, and the manufacturing method using the probe bonding probe unit according to the second embodiment of the present invention improve the reliability of the probe bonding process and simultaneously produce the probe card. Save time and manufacturing costs.

In addition, since the probe 100 includes an interconnecting element 140 for bonding with the substrate 2000, there is no need to form a separate interconnection element on the substrate 2000, so that the manufacturing time and manufacturing of the probe card The cost is reduced.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 to 3 are cross-sectional views for explaining a method of manufacturing a conventional probe card,

4 is a perspective view showing a probe unit for probe bonding according to a first embodiment of the present invention;

5 is a cross-sectional view taken along the line VV of FIG. 4,

6 is a flowchart illustrating a method of manufacturing a probe bonding probe unit according to a first embodiment of the present invention.

7 to 12 are cross-sectional views illustrating a method of manufacturing a probe bonding probe unit according to a first embodiment of the present invention.

13 is a flowchart illustrating a probe bonding method using the probe bonding probe unit according to the first embodiment of the present invention.

14 to 16 are cross-sectional views illustrating a probe bonding method using a probe bonding probe unit according to a first embodiment of the present invention.

17 is a perspective view illustrating a probe unit for probe bonding according to a second embodiment of the present invention;

18 is a cross-sectional view taken along the line VII-VII of FIG. 17,

19 is a flowchart illustrating a method of manufacturing a probe bonding probe unit according to a second embodiment of the present invention.

20 to 25 are cross-sectional views illustrating a method of manufacturing a probe bonding probe unit according to a second embodiment of the present invention.

FIG. 26 is a flowchart illustrating a probe bonding method using a probe bonding probe unit according to a second exemplary embodiment of the present invention.

27 to 29 are cross-sectional views illustrating a probe bonding method using a probe bonding probe unit according to a second exemplary embodiment of the present invention.

Claims

In the probe bonding probe unit used to bond the probe to the substrate on which the pad is formed,

The probe and

A conductive plate including a plate part formed of a conductive material and penetrating through the plate part so as to correspond to the pad of the substrate, and having an opening part partially covered by another part of the probe.

Probe bonding probe unit comprising a.

The method of claim 1,

The probe comprises an interconnecting element,

And the interconnection element is located at a portion within the opening.

The method of claim 1,

And the opening is formed in the plate portion in the form of an island.

In the method of bonding the probe to the substrate on which the pad is formed,

(a) an opening through which the probe and a portion of the probe are seated and formed through a plate portion corresponding to the pad of the substrate and a plate portion made of a conductive material and partially covered by another portion of the probe Forming a probe unit for probe bonding comprising a conductive plate comprising a,

(b) forming a substrate interconnect element on the pad of the substrate,

(c) positioning the probe bonding probe unit on the substrate such that at least a portion of the substrate interconnection element is located in the opening of the probe bonding probe unit to contact the probe;

(d) bonding the probe to the substrate interconnect element; and

(e) separating the plate from the probe

Bonding method of the probe comprising a.

The method of claim 4, wherein

In step (d),

And irradiating a laser between the substrate interconnect element and the probe through the opening.

The method of claim 4, wherein

In step (d),

And applying heat between the substrate interconnect element and the probe through the opening.

The method according to claim 5 or 6,

Forming a conductive paste on the substrate interconnect element so as to be positioned between the substrate interconnect element and the probe.

The method of claim 4, wherein

In step (e),

Bonding method of the probe that is carried out using a wet etching process.

A method of bonding a probe comprising an interconnection element to a padded substrate, the method comprising:

(a) an opening through which the probe and a portion of the probe are seated and formed through a plate portion corresponding to the pad of the substrate and a plate portion made of a conductive material and partially covered by another portion of the probe Forming a probe unit for probe bonding, the conductive plate comprising a conductive plate, wherein an interconnection element of the probe is located at a portion within the opening;

(b) positioning the probe unit for probe bonding on the substrate such that the interconnecting elements of the probe contact the pad of the substrate,

(c) bonding the interconnect element of the probe to the pad of the substrate;

(d) separating the plate from the probe

Bonding method of the probe comprising a.

The method of claim 9,

Step (c) is,

And irradiating a laser between the interconnect element of the probe and the pad of the substrate through the opening.

The method of claim 9,

Step (c) is,

And applying heat between the interconnect element of the probe and the pad of the substrate through the opening.

The method of claim 10 or 11,

Forming a conductive paste on the pad of the substrate to be positioned between the interconnect element of the probe and the pad of the substrate.

The method of claim 9,

In step (d),

Bonding method of the probe that is carried out using a wet etching process.