KR20100043322A - Dual plate type organic electro-luminescent device and method for fabricating thereof - Google Patents

Abstract

PURPOSE: A dual plate type organic electro luminescence device and a manufacturing method thereof are provided to prevent the poor contact between the connecting electrode and the second electrode by forming a plurality of contact bumps on the exposed surface of a patterned spacer. CONSTITUTION: A gate wiring and a data wiring define a pixel region on a first substrate(105). A switching transistor is located in the crossing point between the data line and the gate wiring. A driving transistor is connected to the switching transistor. A first electrode(180) is formed in the lower-part of a second substrate(110). A plurality of contact bumps are formed in the surface of the patterned spacer. An organic light-emitting layer covers the lower/side part of a partition wall and the patterned spacer. The second electrode(184) is formed under the organic light-emitting layer.

Description

Dual plate organic electroluminescent device and method for manufacturing the same {Dual Plate Type Organic Electro-luminescent Device and method for fabricating

The present invention relates to an organic light emitting device, and more particularly, to a dual plate type organic light emitting device capable of preventing poor contact between the upper plate and the lower plate.

In general, organic light emitting diodes, which are one of flat panel displays, have high luminance and low operating voltage characteristics. In addition, the self-luminous self-illuminating type provides high contrast ratio, enables ultra-thin display, easy response time with several microsecond response time, no restriction on viewing angle, and stable at low temperatures. Since it is driven at a low voltage of 5V to 15V of direct current, it is easy to manufacture and design a driving circuit.

The organic light emitting diode having such characteristics is classified into a passive matrix type and an active matrix type. In the passive matrix method, since a scan line and a signal line cross each other and constitute a device in a matrix form, the scan lines are sequentially driven over time in order to drive each pixel. In order to display, the instantaneous luminance should be as much as the average luminance multiplied by the number of lines.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off pixels, is positioned for each pixel, and the first electrode connected to the thin film transistor is turned on and off in units of pixels. The second electrode facing the first electrode is formed on the entire surface to become a common electrode.

In the active matrix method, a voltage applied to a pixel is charged in a storage capacitor (Cst), and the power is applied until the next frame signal is applied, thereby irrespective of the number of scan lines. Run continuously for one screen. Therefore, even when a low current is applied, the same luminance is achieved, and thus, low power consumption, high definition, and large size can be obtained. Recently, an active matrix type organic light emitting diode is mainly used.

Basic structure and operation characteristics of the organic light emitting diode of the active matrix method will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram illustrating a unit pixel of a conventional active matrix type organic light emitting diode.

As illustrated, the unit pixel of the active matrix organic light emitting diode according to the related art includes a switching transistor Ts, a driving transistor Td, a storage capacitor Cst, and an organic light emitting diode E.

That is, the gate line GL formed in one direction, the data line DL defining the pixel region P by crossing the gate line GL perpendicularly, and the power line voltage are spaced apart from the data line DL. Power wirings PL for application are respectively formed.

In addition, a switching transistor Ts is formed at an intersection point of the gate line GL and the data line DL, and a driving transistor Td electrically connected to the switching transistor Ts is formed.

In this case, the driving transistor Td is electrically connected to the organic light emitting diode E. That is, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving transistor Td, and the second electrode, which is the other terminal, is connected to the power supply wiring PL. The power wiring PL serves to transfer the power voltage to the organic light emitting diode E. In addition, a storage capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor Td.

Therefore, when a signal is applied through the gate line GL, the switching transistor Ts is turned on, and the signal of the data line DL is transferred to the gate electrode of the driving transistor Td. Light is output by the electric field-pole pair of the organic light emitting diode E connected thereto at the turn-on of the driving transistor Td. At this time, when the driving transistor Td is turned on, the level of the current flowing from the power supply line PL to the organic light emitting diode E is determined, which causes the organic light emitting diode E to have a gray scale (gray). scale).

In addition, the storage capacitor Cst serves to maintain a constant gate voltage of the driving transistor Td when the switching transistor Ts is turned off, thereby turning off the switching transistor Ts. Even in the state, the level of the current flowing through the organic light emitting diode E can be kept constant until the next frame.

In general, such an organic light emitting diode has an organic light emitting diode including an array element such as a thin film transistor, an anode and a cathode electrode, and an organic light emitting layer formed on one substrate. As an example, studies have been actively conducted on a dual plate type organic light emitting diode having a structure in which an array device and an organic light emitting diode are formed on different substrates and connected to each other by a columnar connection electrode.

Hereinafter, the organic light emitting diode of the dual plate type according to the related art will be described with reference to the accompanying drawings.

FIG. 2 is a cross-sectional view schematically illustrating a conventional dual plate type organic light emitting device, and FIG. 3 is an enlarged view of portion A of FIG. 2.

As shown in FIG. 2 and FIG. 3, a conventional dual plate type organic light emitting diode 1 includes a first substrate divided into a pixel region P, a driving region Dr, and a data region D. 5) and a second substrate 10 opposed to the first substrate 5.

The pixel region P is a region where a gate wiring GL and an data wiring DL are defined to cross each other, and the driving region Dr includes a driving transistor Td and the data region D. Is an area where the data lines DL are formed, respectively.

On the upper surface of the first substrate 5, gate wiring and data wiring DL defining a pixel region P by crossing each other with a gate insulating layer 45 therebetween, and the gate wiring and data wiring DL. A switching transistor Ts positioned at an intersection point of the second transistor; a driving transistor Td connected to the switching transistor Ts; and the switching transistor Ts and the driving transistor Td; A passivation layer 55 including a drain contact hole DCH exposing the drain electrode 34 of the drain electrode 34, and a connection electrode 70 connected to the drain electrode 34 on the passivation layer 55 through a drain contact hole DCH. ) Are in turn.

In this case, the driving transistor Td includes a semiconductor layer 42 including a gate electrode 25, an active layer 40, and an ohmic contact layer 41, a source electrode 32, and a drain electrode 34. .

On the other hand, a plurality of auxiliary electrodes 60 corresponding to the data area D, a first electrode 80 covering the lower front surface of the auxiliary electrode 60, and the lower surface of the second substrate 10, A buffer pattern 62 covering the auxiliary electrode 60 for each pixel region P under the first electrode 80, and a cross-section having an inverse taper structure in the lower portion corresponding to the buffer pattern 62. A plurality of partitions 64 configured for each (P), a patterned spacer 50 corresponding to one-to-one correspondence for each pixel region P between the plurality of partitions 64, and the plurality of partitions 64 are automatically separated. The organic light emitting layer 82 in contact with the first electrode 80 and the second electrode 84 in contact with the lower portion of the organic light emitting layer 82 are sequentially positioned for each pixel area P. In this case, the first electrode 80, the organic emission layer 82, and the second electrode 84 may be referred to as an organic light emitting diode (E).

Although not shown in the drawings, the first substrate 5 and the second substrate 10 may be formed on a seal pattern (not shown) made of a thermosetting resin along the outermost edge of a non-display area (not shown) that does not implement an image. Are opposed to each other. At this time, the seal pattern functions to maintain a constant cell gap of the first and second substrates 5 and 10 and to seal the first and second substrates 5 and 10 in a vacuum state.

In this case, the patterned spacer 50 is formed using a photosensitive layer having a positive characteristic. Such a positive type photosensitive layer has a characteristic in which a portion to which light is received is removed when developing. In particular, light is increased from an exposed surface of the photosensitive layer, and the portion of the photosensitive layer adjacent to the buffer pattern 62 is proportional to its thickness. The exposure amount is relatively small due to the transmittance of the photosensitive layer itself.

As a result, the reaction to the light occurs well on the surface of the photosensitive layer at which the incidence of light starts, and a phenomenon in which a portion of the light away from the surface of the photosensitive layer is relatively insufficient is generated. At this time, when the development process is performed, such characteristics are reflected, and the cross section has a tapered shape in which the width decreases gradually from the surface of the second substrate 10 to the exposed surface of the photosensitive layer, and the cross section has an ellipse shape. It is formed in a shape close to.

When the cross-sectional shape of the patterned spacer 50 is formed in a trapezoidal shape, the patterned spacer 50 may be disposed between the connection electrode 70 positioned on the first substrate 5 and the second electrode 84 positioned on the second substrate 10. The connection of the contact surface 70 and the second electrode 84 is a reason why the current of the patterned spacer 50 is formed to be close to the above-described elliptic shape at the current process level. It is a situation where the liver is connected in the form of point contact, not surface contact.

At this time, in the case of the patterned spacer 50, since its hardness is large at 60 ° C. or less, it is not easily deformed by external force. Therefore, when a force is applied from the outside of the panel, the patterned spacer 50 is not pressed to connect the second electrode 84 and the connection electrode 70 in a surface contact form, but the patterned spacer 50 is connected to the second. The force may be transferred to the electrode 84 or the connection electrode 70 as it is, thereby causing a disconnection defect that breaks the second electrode 84 or the connection electrode 70.

As described above, in the structure in which the second electrode 84 and the connecting electrode 70 are connected in the form of point contact, the contact area is narrow and the resistance inevitably increases at the point contact portion, and this increase in resistance is actually A voltage smaller than the applied power voltage is applied to the organic light emitting layer 82 or the driving transistor Td to cause a problem of lowering luminance. Further, when a certain amount of voltage is raised to compensate for the drop in the power supply voltage, power consumption increases.

In particular, in the small model of 7 inches or less, the area occupied by the patterned spacer 50 directly affects the opening ratio, so that the design is as narrow as possible within the range of not reducing the opening ratio. For example, in the case of the 3-inch model, the area occupied by the patterned spacer 50 is formed to 12 μm × 12 μm to 14 μm × 14 μm.

Since the shape of the organic light emitting layer 82 and the connection electrode 70 formed on the patterned spacer 50 is determined according to the shape of the patterned spacer 50, the lower portion of the patterned spacer 50 is formed. The second electrode 84 and the connecting electrode 70 positioned on the surface may also be connected in a point contact form.

When contact failure occurs due to the instability between the second electrode 84 and the connection electrode 70 connected in the form of point contact as described above, the pixel in which the contact failure is generated causes a bright point defect to degrade the image quality. Problems arise, and further act as a factor in inhibiting production yield.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and improves the production yield through preventing contact failure between the connecting electrode and the second electrode caused by the point contact by the patterned spacer designed to be elliptical. The purpose.

In accordance with an aspect of the present invention, there is provided a dual plate organic light emitting diode including: a first substrate and a second substrate that are opposed to each other; Gate wirings and data wirings defining a pixel area perpendicularly crossing the first substrate; A switching transistor positioned at an intersection of the gate wiring and the data wiring, and a driving transistor connected to the switching transistor; A connection electrode connected to the drain electrode of the driving transistor; A first electrode configured as a lower front surface of the second substrate; A buffer pattern covering a boundary between the pixel areas under the first electrode; A partition wall having a reverse taper structure in a lower portion corresponding to the buffer pattern; A patterned spacer having a plurality of contact protrusions on one surface of the pixel area, one side spaced apart from the partition wall, in a direction toward the second substrate; An organic emission layer covering lower and side surfaces of the barrier ribs and the patterned spacers and contacting the first electrode for each pixel area; The organic light emitting layer may be disposed below the organic light emitting layer, and may extend in each pixel area, the one side of which may be in contact with the organic light emitting layer and the other side of which may include a second electrode connected to the first electrode.

In this case, the patterned spacers are formed of a plurality of sub-patterned spacers, and the plurality of contact protrusions are configured to correspond one-to-one to the plurality of sub-patterned spacers. The plurality of contact protrusions are formed to protrude in correspondence with the portion where the organic light emitting layer and the second electrode and the connection electrode contact each other.

In this case, the plurality of contact protrusions are formed integrally with the patterned spacer using the optical diffraction characteristic of the exposure machine. The patterned spacers are formed through a mask in which a plurality of patterns respectively corresponding to the plurality of sub-patterned spacers are designed.

The plurality of patterns may be any one selected from a polygonal structure including a circle, a triangle, a rectangle, a pentagon, and a hexagon. A gap portion adjacent to an abutting boundary portion between the plurality of patterns and a center portion facing each other between the plurality of patterns are designed to be positioned at a transmissive portion.

In the present invention, the contact number and the contact area between the second electrode and the connecting electrode can be increased by forming a plurality of contact protrusions on the exposed surface of the patterned spacer, thereby preventing contact failure in advance. There is an effect that can reduce the power consumption.

--- Example ---

In the present invention, a plurality of contact protrusions having an embossed shape are formed on the exposed surface of the patterned spacer so as to increase the number and area of point contact between the second electrode and the connecting electrode.

Hereinafter, a dual plate type organic light emitting diode according to the present invention will be described with reference to the accompanying drawings.

4 is a cross-sectional view showing an organic light emitting device of a dual plate type according to the present invention.

As illustrated, the dual plate type organic light emitting diode 101 according to the present invention includes a first substrate 105 divided into a pixel region P, a driving region Dr, and a data region D, It includes a second substrate 110 which is opposed to the first substrate 105.

In this case, the pixel region P is a region where a gate wiring (not shown) and a data wiring DL intersect and are defined, and the driving region Dr is a driving transistor Td and the data region D. Is an area where the data lines DL are formed, respectively.

An upper surface of the first substrate 105 may include a gate line and a data line DL crossing each other to define a pixel region P, and a switching transistor positioned at an intersection point of the gate line and the data line DL. Not shown) and a drain contact hole DCH covering the driving transistor Td connected to the switching transistor, the switching transistor and the driving transistor Td, and exposing the drain electrode 134 of the driving transistor Td. ) And a connection electrode 170 contacting the drain electrode 134 through the drain contact hole DCH on the passivation layer 155.

The passivation layer 155 is formed of one selected from the group of inorganic insulating materials including silicon oxide (SiO ₂ ) and silicon nitride (SiNx), and optionally includes benzocyclobutene and photo acryl. It may be composed of one selected from the group of organic insulating materials.

In this case, the connection electrode 170 is composed of a double layer in which the first layer 170a and the second layer 170b are sequentially stacked, and the first layer 170a is formed of indium tin oxide (ITO) and Among the transparent conductive material group including indium-zinc oxide (IZO), the second layer 170b is formed of one selected from the group of conductive materials including molybdenum or molybdenum alloy.

The driving transistor Td includes a gate electrode 125, a gate insulating layer 145, a semiconductor layer 142, and source and drain electrodes 132 and 134. The semiconductor layer 142 includes an active layer 140 made of pure amorphous silicon (a-Si: H) and an ohmic contact layer 141 made of amorphous silicon (n + a-Si: H) containing impurities. If necessary, it may be formed as a single layer made of crystalline silicon (p-Si).

On the other hand, the lower surface of the second substrate 110, the plurality of auxiliary electrodes 160 corresponding to the data area (D), the first electrode 180 covering the lower front surface of the auxiliary electrode 160, and A plurality of buffer patterns 162 covering the auxiliary electrode 160 for each pixel area P under the first electrode 180, and a plurality of cross-sections having a reverse tapered structure in the lower portion corresponding to the buffer patterns 162. A patterned spacer including a partition wall 164 and a plurality of contact protrusions H, which are spaced apart from the plurality of partition walls 164 and protrude in an embossed form on a surface of the pixel area P that faces the first substrate 105. An organic emission layer 182 covering the side surface and the lower surface of the patterned spacer 150 and extending for each pixel region P to contact the first electrode 180, and the organic emission layer 182. The side surface and the bottom surface of the patterned spacer 150 is covered with a lower portion of the patterned spacer 150 and extends for each pixel region P so that one side contacts the organic emission layer 182. Side of the second electrode 184 is configured in contact with the connecting electrode 170 of the first substrate 105 is positioned in turn.

The auxiliary electrode 160 is selected from the group of conductive materials including molybdenum and molybdenum alloys, and the first electrode 180 has a work function such as indium tin oxide (ITO) and indium zinc oxide (IZO). Each consists of one selected from the group of relatively high transparent conductive materials.

In this case, the auxiliary electrode 160 is formed to lower the resistance value of the first electrode 180 made of a material having a relatively high resistance, and may be omitted if necessary. The patterned spacer 150 positioned on the lower surface in contact with the buffer pattern 162 serves to maintain a constant cell gap between the first substrate 105 and the second substrate 110.

The organic emission layer 182 formed in the pixel region P is separated from the neighboring pixel region P by the partition wall 160 having an inverse taper shape, and covers the side and bottom surfaces of the patterned spacer 150. And formed. In this case, the organic light emitting layer 182 is designed to be made of an organic material emitting red, green, and blue light for each pixel region P to implement full color.

In addition, although not shown in detail in the drawings, the second electrode 184 may be formed in a triple layer structure, in which the first layer is made of aluminum (Al) or aluminum alloy (AlNd), and the second layer is made of silver ( Ag), the third layer may each be made of calcium (Ca). In this case, the first layer is in contact with the organic light emitting layer 182 and the third layer is in contact with the connection electrode 170, respectively.

In this case, the first electrode 180, the organic emission layer 182, and the second electrode 184 may be referred to as an organic light emitting diode (E).

In addition, a hole transporting layer and a hole injection layer may be disposed between the organic light emitting layer 182 and the first electrode 180 serving as an anode electrode, and the organic light emitting layer 182 and the cathode electrode. An electron injection layer and an electron transporting layer may be further formed between the second electrodes 184 which serve as a channel.

Although not shown in detail in the drawings, the first substrate 105 and the second substrate 110 are formed by a seal pattern (not shown) applied along the outermost edge of a non-display area (not shown) that does not implement an image. Are opposed to each other. The seal pattern faces the second substrate 110 while maintaining a constant cell gap while applying a sealant made of a thermosetting resin or an ultraviolet curable resin along the outermost edge of the first substrate 105 through screen printing. Are coalesced.

In addition, a gate pad portion (not shown) and a data pad portion (not shown) for applying a scan signal and a data signal to the gate line and the data line DL, respectively, are located outside the seal pattern. The gate pad portion and the data pad portion may include a gate pad (not shown) and a data pad (not shown) positioned at one end of each of the gate line and the data line DP, and gate pads connected to the gate pad and the data pad, respectively. Terminals (not shown) and data pad terminals (not shown) are positioned.

At this time, in the present invention, in the patterned spacer 150 spaced apart from the plurality of partition walls 164 and positioned for each pixel region P, the surface of the first substrate 105 is embossed with the surface facing the connection electrode 170. It is characterized by comprising a plurality of contact protrusions (H) protruding in the form.

In the process of forming the patterned spacer 150, the plurality of contact protrusions H may be integrally formed with the patterned spacer 150 through the use of optical diffraction characteristics of the exposure machine.

As such, the plurality of contact protrusions H protruding in an embossed form corresponding to the exposed surface of the patterned spacer 150 may increase the contact area between the second electrode 184 and the connection electrode 170. That is, although the second electrode 184 and the connection electrode 170 are conventionally connected by the patterned spacer (50 of FIG. 2) formed in an elliptical shape in the point contact manner, in the present invention, the contact electrode H has a plurality of contact protrusions H. The patterned spacer 150 may increase the number of contacts and the contact area between the second electrode 184 and the connection electrode 170, thereby preventing contact between the second electrode 184 and the connection electrode 170. There is a structural advantage that can be prevented in advance.

This will be described in more detail with reference to the accompanying drawings.

FIG. 5 is an enlarged view of a portion B of FIG. 4.

As shown, the patterned spacer 150 according to the present invention is composed of a plurality of contact protrusions (H) protruding in the form of embossing on the exposed surface. In the patterned spacer 150 having a plurality of contact protrusions H on the exposed surface, a plurality of subpatterned spacers 150a and 150b having one contact protrusion H are formed.

At this time, the cross-section of each of the sub-patterned spacers 150a and 150b has a tapered shape in which the width becomes smaller gradually from the surface of the second substrate 110 to the exposed surface, even if the cross-section is designed in an elliptical shape. In the patterned spacer 150 formed of a plurality of subpatterned spacers 150a and 150b, a plurality of contact protrusions H located in each of the subpatterned spacers 150a and 150b are distributed. It has a structural advantage that can enlarge the area.

That is, in the formation of the patterned spacer 150 having the same size for each pixel region (P of FIG. 4), a patterned spacer having one contact point for each pixel region is conventionally formed in an elliptical shape. By connecting 150 or multiple patterns of a circular or square pattern or designing them to overlap each other, a plurality of contact protrusions H are exposed to the exposed surface by utilizing diffraction characteristics, which are optical interference of the exposure machine. Can be formed.

In this case, since the organic light emitting layer 182 and the second electrode 184 covering the side surface and the lower surface of the patterned spacer 150 are formed by deposition, the organic light emitting layer 182 and the second electrode 184 are formed on the exposed lower surface of the patterned spacer 150. Inevitably, the plurality of contact protrusions H have the same shape as that of the plurality of contact protrusions H. As a result, the plurality of contact protrusions H increases the number of times and the area of contact between the second electrode 184 and the connection electrode 170. It acts as a mediator.

Therefore, in the present invention, the number of contact and the contact area between the second electrode 184 and the connection electrode 170 may be increased by forming a plurality of contact protrusions H on the exposed surface of the patterned spacer 150. As a result, contact failures can be prevented in advance, and further, power consumption can be reduced.

The patterned spacer having a plurality of contact protrusions configured in the embossing form described above can be manufactured in various ways, and as an example, three methods will be described.

6A and 6B illustrate a method of forming a patterned spacer according to a first example of the present invention. In more detail, FIG. 6A is a plan view illustrating a mask according to a first example of the present invention, and FIG. 6B is a plan view illustrating a patterned spacer formed using the mask of FIG. 6A.

6A and 6B, the first example of the present invention utilizes the optical diffraction characteristics of the exposure machine in a state in which a mask made of the same size as a mask designed to form a conventional patterned spacer is divided into four parts. A patterned spacer is produced.

More specifically, in the area designed to form the patterned spacer 150, when the horizontal length is designed to be the first length 2d, the second length is half of the first length 2d. (d) is divided into first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d, and the first, second, third, and fourth circular patterns 190a, The mask 190 is designed to correspond to the first, second, third, and fourth quadrants F1, F2, F3, and F4 190b, 190c, and 190d one to one.

In this case, the first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d correspond to blocking portions that block light, and each circular pattern 190a, 190b, 190c, It is preferable that the abutting part between 190d) be manufactured in one piece connected to each other.

As described above, the patterned spacer 150 is formed using a photosensitive layer having a positive characteristic. Such a positive type photosensitive layer has a characteristic in that light-receiving parts are removed when developing. In particular, such a photosensitive layer receives a relatively high exposure dose compared to a photosensitive layer in which a surface portion directly exposed is far away from the surface. There is this.

As a result, the reaction to the light occurs well on the surface of the photosensitive layer at which light starts to be incident, and a phenomenon in which a relatively small amount of light is incident on the part far away from the surface of the photosensitive layer occurs. At this time, when the development process is carried out, such characteristics are reflected and the cross section has a tapered shape that becomes smaller in width toward the exposed surface of the photosensitive layer, and the cross section is formed in the shape of an ellipse.

At this time, in the present invention, such characteristics are reflected corresponding to each of the first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d of the mask 190 manufactured in four divisions. On the surface exposed to the center of each of the first, second, third and fourth circular patterns 190a, 190b, 190c, and 190d, a plurality of contact protrusions H1, H2, H3, and H4 protruding in an embossed form are formed. .

At this time, the contact portion between the first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d and the gap portion J adjacent to each other, and the first, second, third, and fourth The central portion K of the mask 190 facing each other between the circular patterns 190a, 190b, 190c, and 190d is designed to be open, i.e., a transmissive portion, but due to the optical diffraction characteristics of the exposure machine, The patterned spacers 150 are formed in such a state that all of the corresponding photosensitive layers are not removed but some thicknesses thereof are left.

Therefore, in the first example of the present invention, the first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d are maintained while the area occupied by the patterned spacer 150 is maintained in the same area as before. Since a plurality of contact protrusions H1, H2, H3, and H4 are designed at each center, the number of contact and the contact area can be increased by that amount.

7A and 7B illustrate a method of forming a patterned spacer according to a second example of the present invention. In more detail, FIG. 7A is a plan view illustrating a mask according to a second example of the present invention, and FIG. 7B is a plan view illustrating a patterned spacer formed using the mask of FIG. 7A.

As shown in FIG. 7A and FIG. 7B, in the second example of the present invention, the above-described first example is slightly modified, and redundant description thereof will be omitted.

In the second example of the present invention, in the area designed to form the patterned spacer 150, when the length in the transverse direction is designed as the first length 2d, the second smaller than half of the first length 2d The first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d having a diameter of two lengths d 'are divided into the first, second, third, and fourth circular patterns. The origin of (190a, 190b, 190c, 190d) is the boundary of each of the first, second, third, and fourth quadrants F1, F2, F3, F4, that is, the first and second quadrants F1, F2. Mask 190 so as to correspond to the interface, the boundary of the second and third quadrants F2 and F3, the boundary of the third and fourth quadrants F3 and F4, and the boundary of the fourth and first quadrants F4 and F1, respectively. ) Is designed.

Therefore, in the above-described second example, the plurality of contact protrusions H1, corresponding to the interface of each of the first, second, third, and fourth quadrants F1, F2, F3, and F4 in the same manner as in the first example. Patterned spacers 150 having H2, H3, and H4 may be formed.

8A and 8B illustrate a method of forming a patterned spacer according to a third example of the present invention. In more detail, FIG. 8A is a plan view illustrating a mask according to a third example of the present invention, and FIG. 8B is a plan view illustrating a patterned spacer formed using the mask of FIG. 8A.

As shown in FIGS. 8A and 8B, in the third example of the present invention, the above-described second example is slightly modified, and redundant description thereof will be omitted.

In the third example of the present invention, in the area designed to form the patterned spacer 150, when the horizontal length is designed as the first length 2d, the second length (d ′ in FIG. 7A) and The first, second, third, and fourth circular patterns 190a, 190b, 190c, and 190d having the same diameter of the third length d 'are divided into the first, second, third, and fourth portions. The origin of the circular patterns 190a, 190b, 190c, and 190d corresponds to the boundary of the first, second, third, and fourth quadrants F1, F2, F3, and F4, respectively, and the first and second circular patterns On portions overlapping the first and second circular patterns 190a and 190b, the second and third circular patterns 190b and 190c, the third and fourth circular patterns 190c and 190d, and the fourth and first circular patterns 190d and 190a, respectively. The mask 190 is designed such that the fifth, sixth, seventh, and eighth circular patterns 190e, 190f, 190g, and 190h are positioned.

That is, in the third example of the present invention, the interface between the first and second quadrants F1 and F2, the interface between the second and third quadrants F2 and F3, and the interface between the third and fourth quadrants F3 and F4 , The first to eighth circular patterns 190a, so as to correspond to the boundary surfaces of the fourth and first quadrants F4 and F1 and the first, second, third, and fourth quadrants F1, F2, F3, and F4, respectively. And a mask 190 made of 190b, 190c, 190d, 190e, 190f, 190g, and 190h.

At this time, in the overlapping portions between the respective circular patterns 190a, 190b, 190c, 190d, 190e, 190f, 190g, and 190h, the respective circular patterns 190a, 190b, 190c, 190d, 190e, 190f, 190g, and 190h) are preferably manufactured in one piece without a step on the surface thereof.

Accordingly, in the patterned spacer 150 fabricated in the above-described third example, eight contact protrusions H protruding from the surface of the patterned spacer 150 are formed in correspondence to the center of each overlapping region. , Bar can be manufactured in the form of annular ring, there is a structural advantage to further improve the contact characteristics by increasing the contact area.

In the first, second, and third examples described above, the pattern designed on the mask is manufactured as an example, but the present invention is not limited thereto, and may be designed in various structures such as triangle, square, pentagon, hexagon, and polygon. . In addition, the area occupied by the patterned spacer may be changed in various forms such as 5, 6, and 7 divisions rather than 4 divisions.

Therefore, it will be apparent that the present invention is not limited to the above embodiments, and various modifications and changes can be made without departing from the spirit and spirit of the present invention.

1 is a circuit diagram of a unit pixel of a conventional active matrix type organic light emitting display device.

Figure 2 is a schematic cross-sectional view of a conventional dual plate type organic light emitting device.

3 is an enlarged view of a portion A of FIG. 2;

Figure 4 is a cross-sectional view showing an organic light emitting device of the dual plate method according to the present invention.

5 is an enlarged view of a portion B of FIG. 4;

6A and 6B illustrate a method of forming a patterned spacer according to a first example of the present invention.

7A and 7B illustrate a method of forming a patterned spacer according to a second example of the present invention.

8A and 8B illustrate a method of forming a patterned spacer according to a third example of the present invention.

* Explanation of symbols for the main parts of the drawings *

105: first substrate 110: second substrate

145 gate insulating film 150 patterned spacer

155: protective film 160: auxiliary electrode

162: buffer pattern 164: partition wall

170: connecting electrode 180: first electrode

182: organic light emitting layer 184: second electrode

Td: driving transistor E: organic light emitting diode

H: contact projection

Claims (7)

A first substrate and a second substrate bonded to each other; Gate wirings and data wirings defining a pixel area perpendicularly crossing the first substrate; A switching transistor positioned at an intersection of the gate wiring and the data wiring, and a driving transistor connected to the switching transistor; A connection electrode connected to the drain electrode of the driving transistor; A first electrode configured as a lower front surface of the second substrate; A buffer pattern covering a boundary between the pixel areas under the first electrode; A partition wall having a reverse taper structure in a lower portion corresponding to the buffer pattern; A patterned spacer having a plurality of contact protrusions on one surface of the pixel area, one side spaced apart from the partition wall, in a direction toward the second substrate; An organic emission layer covering lower and side surfaces of the barrier ribs and the patterned spacers and contacting the first electrode for each pixel area; A second electrode disposed under the organic light emitting layer and extending for each pixel region, one side of which is in contact with the organic light emitting layer, and the other side of which is connected to the first electrode Dual plate type organic light emitting device comprising a. The method of claim 1, The patterned spacer is formed of a plurality of sub-patterned spacers, the plurality of sub-patterned spacers, characterized in that the plurality of contact projections are configured to correspond one to one. The method of claim 1, The plurality of contact protrusions are formed in a protruding form corresponding to a portion where the organic light emitting layer and the second electrode and the connection electrode abuts. The method of claim 1, And the plurality of contact protrusions are formed integrally with the patterned spacer using the optical diffraction characteristic of the exposure machine. The method of claim 2, The patterned spacer is an organic light emitting device of a dual plate type, characterized in that formed through a mask designed a plurality of patterns corresponding to each of the plurality of sub-patterned spacers. The method of claim 5, The plurality of patterns is any one selected from a polygonal structure including a circle, a triangle, a quadrilateral, a pentagon and a hexagon. The method of claim 5, A dual plate type organic light emitting device according to claim 1, wherein the gap between the contact portion and the adjacent portion between the plurality of patterns and the center portion facing each other between the plurality of patterns are designed to have a transmissive portion.

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