KR20100034436A - Organic electro-luminescent device and the method for fabricating thereof - Google Patents

Abstract

PURPOSE: An organic electro luminescence device and a manufacturing method thereof are provided to reduce manufacturing costs by arranging a sensor transistor which has a touch screen function inside an organic panel. CONSTITUTION: An OLED(Organic Light Emitting Diode)(E) comprises a first electrode, an organic light-emitting layer, and a second electrode. A sensor transistor(Tss) is arranged in the crossing point between a sensor data wiring and a sensor gate wiring. A sensor protection film covers the lower-part of an auxiliary wiring and the sensor transistor. A transparency connecting electrode(196) covers the side and lower-part of a first spacer. The transparency connecting electrode is connected to the second electrode and auxiliary wiring. A sensor transparent electrode(198) is connected to the sensor transistor. The sensor transparent electrode covers the side and lower-part of the second spacer.

Description

Organic electroluminescent device and its manufacturing method

The present invention relates to a display device, and more particularly, to an organic light emitting device including a touch screen function in an organic panel and a method of manufacturing the same.

In general, organic light emitting diodes, which are one of flat panel displays, have high luminance and low operating voltage characteristics. In addition, the self-luminous self-illuminating type provides high contrast ratio, enables ultra-thin display, easy response time with several microsecond response time, no restriction on viewing angle, and stable at low temperatures. Since it is driven at a low voltage of 5V to 15V of DC, it is easy to manufacture and design a driving circuit.

The organic light emitting diode having such characteristics is classified into a passive matrix type and an active matrix type. In the passive matrix method, since a scan line and a signal line cross each other to form a device in a matrix form, the scan lines are sequentially driven over time in order to drive each pixel. In order to make a payment, the instantaneous luminance must be produced as much as the average luminance multiplied by the number of lines.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off pixels, is positioned for each pixel, and the first electrode connected to the thin film transistor is turned on and off in units of pixels. The second electrode facing the first electrode is formed on the entire surface to become a common electrode.

In the active matrix method, a voltage applied to a pixel is charged in a storage capacitor (Cst), and the power is applied until the next frame signal is applied, thereby irrespective of the number of scan lines. Run continuously for one screen. Therefore, even when a low current is applied, the same luminance is achieved, and thus, low power consumption, high definition, and large size can be obtained. Recently, an active matrix type organic light emitting diode is mainly used.

Basic structure and operation characteristics of the organic light emitting diode of the active matrix method will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram illustrating a unit pixel of an organic light emitting diode of a general active matrix type.

As illustrated, the unit pixel of the active matrix organic light emitting diode according to the related art includes a switching transistor Ts, a driving transistor Td, a storage capacitor Cst, and an organic light emitting diode E.

That is, the gate line GL formed in one direction, the data line DL defining the pixel region P by crossing the gate line GL perpendicularly, and the power line voltage are spaced apart from the data line DL. Power wirings PL for application are respectively formed.

In addition, a switching transistor Ts is formed at an intersection point of the gate line GL and the data line DL, and a driving transistor Td electrically connected to the switching transistor Ts is formed.

In this case, the driving transistor Td is electrically connected to the organic light emitting diode E. That is, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving transistor Td, and the second electrode, which is the other terminal, is connected to the power supply wiring PL. The power wiring PL serves to transfer the power voltage to the organic light emitting diode E. In addition, a storage capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor Td.

Therefore, when a signal is applied through the gate line GL, the switching transistor Ts is turned on, and the signal of the data line DL is transferred to the gate electrode of the driving transistor Td. Light is output by the electric field-pole pair of the organic light emitting diode E connected thereto at the turn-on of the driving transistor Td. At this time, when the driving transistor Td is turned on, the level of the current flowing from the power supply line PL to the organic light emitting diode E is determined, which causes the organic light emitting diode E to have a gray scale (gray). scale).

In addition, the storage capacitor Cst serves to maintain a constant gate voltage of the driving transistor Td when the switching transistor Ts is turned off, thereby turning off the switching transistor Ts. Even in the state, the level of the current flowing through the organic light emitting diode E can be kept constant until the next frame.

2 is a cross-sectional view schematically showing an organic light emitting diode according to the related art, which will be described in more detail with reference to this.

As illustrated, the organic light emitting diode 1 according to the related art includes a driving circuit unit (not shown) and an organic panel 50 for applying a driving signal. The organic panel 50 includes a pixel region P defined by the intersection of the gate wiring GL and the data wiring DL in FIG. 1, and a driving region Dr in which the driving transistor Td is formed. It includes a first substrate 5 and a second substrate 10 which are divided and opposed to each other.

On the first substrate 5 on which the pixel region P and the driving region Dr are defined, gate wiring and data wiring defining a pixel region P by crossing each other with a gate insulating layer 45 therebetween, The switching transistor (Ts of FIG. 1) positioned at the intersection of the gate wiring and the data wiring, the driving transistor Td connected to the switching transistor, the switching transistor and the driving transistor Td, and covering the driving transistor ( A passivation layer 55 including a drain contact hole DCH exposing the drain electrode 34 of Td, and an upper portion of the passivation layer 55 connected to the drain electrode 34 through the drain contact hole DCH. The first electrode 70, the organic emission layer 75 on the first electrode 70, and the second electrode 80 on the organic emission layer 75 are sequentially stacked.

In this case, a bank layer 65 covering both upper sides of the first electrode 70 is further configured, and the bank layer 65 has an opening (not shown) in which portions corresponding to the pixel regions P are patterned. It may include. The bank layer 65 may be formed of one selected from the group of organic insulating materials including benzocyclobutene and photo acryl.

The driving transistor Td includes a semiconductor layer 42 including a gate electrode 25, an active layer 40, and an ohmic contact layer 41, a source electrode 32, and a drain electrode 34. In this case, the first electrode 70, the organic emission layer 75, and the second electrode 80 may be referred to as an organic light emitting diode (E).

The first and second substrates 5 and 10 are opposed to each other by a seal pattern (not shown) formed along the outermost edges of the image.

The second substrate 10 for the organic light emitting element having the above-described configuration is only used for the purpose of sealing the first and second substrates 5 and 10 by bonding to the first substrate 5. The second substrate 10 occupies a large proportion in terms of cost, but the scalability of the application is limited.

As described above, the conventional organic EL device requires an additional circuit component to add a touch function to the outside of the organic panel, so that an additional cost is exponentially generated.

The present invention has been made to solve the above-described problem, and the organic electroluminescent light emission by the design of the sensor transistor that can implement the touch screen function in the interior of the organic panel away from the way of additional design of additional circuit components to the outside of the organic panel An object is to reduce the manufacturing cost of the device.

The organic light emitting device according to the present invention for achieving the above object comprises a first substrate and a second substrate that is opposed to each other; Gate wiring and data wiring vertically crossing the upper surface of the first substrate to define a pixel region; A switching transistor positioned at an intersection point of the gate wiring and the data wiring, and a driving transistor connected to the switching transistor; An organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode connected to the driving transistor; Sensor gate wirings and sensor data wirings vertically crossing the lower surface of the second substrate to define a sensor pixel region; An auxiliary wiring electrically insulated from the sensor gate wiring and sensor data wiring; A sensor transistor positioned at an intersection of the sensor gate wiring and the sensor data wiring; A sensor passivation layer covering a bottom surface of the sensor transistor and the auxiliary line; A first spacer having a first height as a lower surface of the sensor passivation layer, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; A transparent connection electrode covering the side surface and the bottom surface of the first spacer and connected to the second electrode and the auxiliary line in correspondence with each pixel region, and electrically insulated from the transparent connection electrode, and side and bottom surfaces of the second spacer. And a sensor transparent electrode connected to the sensor transistor in a state of covering a surface and spaced apart from the second electrode by a touch gap.

At this time, the touch gap is designed in the range of 1 ~ 2μm. One sensor transistor is designed for every three, six or nine sensor pixel regions.

In the sensor transparent electrode and the second electrode electrically separated by the touch gap, a sensor connected to the sensor transistor at the moment when the sensor transparent electrode and the second electrode located in a specific sensor pixel region is contacted by an external force The touch screen function may be implemented by detecting a position of a corresponding pixel area of the sensor through a data line.

In addition, the first spacer is configured on the auxiliary wiring, and the second spacer is formed on the upper part of the sensor gate wiring or the sensor transistor, respectively. The first electrode is one selected from the group of opaque conductive materials including calcium, magnesium and aluminum, and the second electrode is one selected from the group of transparent conductive materials including indium tin oxide and indium zinc oxide.

According to an aspect of the present invention, there is provided a second substrate for an organic light emitting device, including: a sensor gate wiring and a sensor gate electrode configured in one direction on a substrate; An auxiliary wiring configured to be electrically spaced apart from the sensor gate wiring; A sensor gate insulating film covering the sensor gate electrode, the wiring, and the auxiliary wiring; A sensor semiconductor layer overlapping the sensor gate electrode with the sensor gate insulating layer interposed therebetween; Sensor data wirings on the sensor gate insulating film to define a sensor pixel region crossing the sensor gate wirings, and sensor source and drain electrodes extending from the sensor data wirings and spaced apart from each other; A sensor passivation layer covering the sensor data line, the sensor source and drain electrodes, and including first and second contact holes exposing the auxiliary line and the sensor drain electrode; A first spacer having a first height corresponding to the sensor pixel region on the sensor passivation layer, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; A transparent connection electrode covering the side surface and the upper surface of the first spacer and connected to the second electrode and the auxiliary line in correspondence with each sensor pixel region, and electrically insulated from the transparent connection electrode, It covers a top surface and comprises a sensor transparent electrode connected to the sensor transistor.

A method of manufacturing a second substrate for an organic light emitting device according to a first example of the present invention for achieving the above object is a secondary wiring spaced apart from the sensor gate wiring and the sensor gate electrode, and the sensor gate wiring in one direction on the substrate. Forming a; Forming a sensor gate insulating film covering the sensor gate electrode and the wiring and the auxiliary wiring; Forming a sensor semiconductor layer overlapping the sensor gate electrode with the sensor gate insulating layer interposed therebetween; Forming sensor data wirings on the sensor gate insulating film to define a sensor pixel region crossing the sensor gate wirings, and sensor source and drain electrodes extending from the sensor data wirings and spaced apart from each other; Forming a sensor passivation layer covering the sensor data line, the sensor source and the drain electrode, and including first and second contact holes exposing the auxiliary line and the sensor drain electrode; Forming a first spacer having a first height corresponding to the sensor pixel region on the sensor passivation layer, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; A transparent connection electrode covering the side surface and the upper surface of the first spacer and connected to the second electrode and the auxiliary line in correspondence with each sensor pixel region, and electrically insulated from the transparent connection electrode, Covering the upper surface and forming a sensor transparent electrode connected to the sensor transistor.

At this time, the auxiliary wiring is formed of one selected from the group of conductive materials including aluminum, aluminum alloy, molybdenum, molybdenum alloy, copper, titanium and tantalum.

According to another aspect of the present invention, there is provided a method of manufacturing a second substrate for an organic light emitting device, wherein the auxiliary wiring is configured to be separated from the sensor gate wiring and the sensor gate electrode in one direction on the substrate and the sensor gate wiring. Forming a; Forming a sensor gate insulating film covering the sensor gate electrode and the wiring and the auxiliary wiring; Forming a sensor semiconductor layer overlapping the sensor gate electrode with the sensor gate insulating layer interposed therebetween; Forming sensor data wirings on the sensor gate insulating film to define a sensor pixel region crossing the sensor gate wirings, and sensor source and drain electrodes extending from the sensor data wirings and spaced apart from each other; Forming a first spacer having a first height corresponding to the sensor pixel region, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; Forming a sensor passivation layer covering the sensor data line, the sensor source and the drain, and the first and second spacers, the first and second contact holes exposing the auxiliary line and the sensor drain electrode; A transparent connection electrode covering the side surface and the top surface of the first spacer on the sensor passivation layer and corresponding to the sensor pixel region and electrically insulated from the transparent connection electrode; Forming a sensor transparent electrode connected to the sensor transistor and covering side and top surfaces of the spacer.

The present invention has the effect of reducing the manufacturing cost of the organic light emitting device having a touch screen function by inserting a touch sensor structure into the organic panel.

--- Example ---

The present invention is characterized by providing an organic light emitting device having a sensor transistor for a touch screen function inside the organic panel and a method of manufacturing the same.

Hereinafter, an organic light emitting display device having a touch screen function according to the present invention will be described with reference to the accompanying drawings.

3 is a cross-sectional view illustrating an organic light emitting display device having a touch screen function according to the present invention.

As illustrated, the organic light emitting diode 100 according to the present invention includes a driving circuit unit (not shown) and an organic panel 150 for applying a driving signal. The organic panel 150 includes a pixel region P defined by crossing gate lines and data lines, a driving region Dr in which a driving transistor Td is formed, and a sensor region S in which a sensor transistor is formed. The first substrate 105 and the second substrate 110, which are separated from each other and are opposed to each other, include a vacuum layer 115 corresponding to the spaced space between the first substrate 105 and the second substrate 110. do.

On the upper surface of the transparent substrate 101 of the first substrate 105 in which the pixel region P and the driving region Dr are defined, the pixel region P is defined by crossing each other with a gate insulating layer 145 therebetween. A gate wiring (not shown) and a data wiring (not shown), a switching transistor (not shown) positioned at an intersection of the gate wiring and a data wiring, a driving transistor (Td) connected to the switching transistor, and the switching transistor And a protective layer 155 including a drain contact hole DCH covering the driving transistor Td and exposing the drain electrode 134 of the driving transistor Td, and a drain contact hole above the protective layer 155. A first electrode 170 connected to the drain electrode 134 through a DCH, an organic light emitting layer 175 formed on an upper surface in contact with the first electrode 170, and an upper portion of the organic light emitting layer 175. The second electrode 180 connected to the organic emission layer 175 is included. .

In this case, the first electrode 170, the organic emission layer 175, and the second electrode 180 may be referred to as an organic light emitting diode (E).

In addition, a bank layer 165 covering both upper sides of the first electrode 170 is further configured. The bank layer 165 may include an opening (not shown) in which portions corresponding to the pixel regions P are patterned. It may include. The bank layer 165 may be formed of one selected from the group of organic insulating materials including benzocyclobutene and photo acryl.

In addition, the passivation layer 155 may be formed of one selected from the group of inorganic insulating materials including silicon oxide (SiO ₂ ) and silicon nitride (SiNx), and may be selected from one of the aforementioned organic insulating materials. .

In particular, the organic light emitting device including the touch screen function according to the present invention cannot be applied to a bottom emission method, but only to a top emission method.

Accordingly, the first electrode 170 is one selected from the group of opaque conductive materials including calcium (Ca), magnesium (Mg), and aluminum (Al), which have excellent reflectance and have a relatively low work function. 180) should each be formed of one selected from the group of transparent conductive materials including indium tin oxide (ITO) and indium zinc oxide (IZO). In this case, the first electrode 170 may be an anode or a cathode, and the second electrode 180 may be a cathode or an anode.

The organic light emitting layer 175 includes a light emitting layer 173 and first and second common layers 172 and 174. In this case, a first common layer 172 including a hole transporting layer or a hole injection layer is formed as a space between the light emitting layer 173 and the first electrode 170. The second common layer 174 formed of an electron injection layer or an electron transporting layer is configured as a space between the first electrode 173 and the second electrode 180.

Although not shown in detail in the drawing, the organic light emitting layer 175 may be designed to be made of an organic material that emits red, green, and blue light for each pixel region P to implement full color.

The driving transistor Td includes a gate electrode 125, a gate insulating layer 145, a semiconductor layer 140, a source electrode 132, and a drain electrode 134. The semiconductor layer 140 is composed of a single layer made of crystalline silicon (p-Si) or a double layer made of pure silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities. Can be.

The lower surface of the transparent substrate 102 of the second substrate 110 may include a sensor gate wiring (not shown) configured in one direction, a sensor gate electrode 152 extending from the sensor gate wiring, and the sensor gate wiring. An auxiliary wiring 160 spaced apart from one side to be electrically insulated from the sensor, a sensor gate insulating layer 135 covering the sensor gate wiring and the sensor gate electrode 152, and a sensor gate below the sensor gate insulating layer 135. A sensor semiconductor layer 154 overlapping with the electrode 152, a sensor data line (not shown) configured in a direction perpendicular to the sensor gate line below the sensor semiconductor layer 154, and extending from the sensor data line And a sensor source electrode 142 contacting the sensor semiconductor layer 154 and a sensor drain electrode 144 spaced apart from the sensor source electrode 142.

In this case, the sensor gate electrode 152, the sensor gate insulating layer 135, the sensor semiconductor layer 154, and the sensor source and drain electrodes 142 and 144 may be referred to as a sensor transistor Tss.

In addition, first and second contacts covering the sensor data line, the sensor source and drain electrodes 142 and 144, and exposing one side of the auxiliary line 160 and one side of the sensor drain electrode 144, respectively. A sensor protective layer 185 including holes CH1 and CH2, and a side of the first substrate 105 and the second substrate 110 to one side adjacent to the auxiliary wiring 160 under the sensor protective layer 185. A gap spacer 190 holding a cell gap G1, a touch spacer 192 spaced apart from the sensor transistor Tss by a touch gap G2 at a constant distance from the second electrode 180, and The side surface and the bottom surface of the gap spacer 190 and one end is directly connected to the second electrode 180 in correspondence to the pixel region P, and the other end is connected to the auxiliary line 160 through the first contact hole CH1. ) And a transparent connection electrode 196 connected to the transparent connection electrode 196, electrically insulated from the transparent connection electrode 196, and side and bottom surfaces of the touch spacer 192. It covers and includes a sensor transparent electrode 198 connected to the sensor drain electrode 144 through the second contact hole (CH2).

The sensor gate wiring and the sensor data wiring are preferably designed in a direction parallel or perpendicular to the gate wiring and the data wiring formed on the first substrate 105, and may be designed in any direction. In this case, it is preferable that the sensor gate wiring and the sensor data wiring be designed to vertically cross each other.

The sensor gate wiring and the auxiliary wiring 160 are formed of the same material in the same layer. In this case, the auxiliary wiring 160 is formed to lower the resistance value of the second electrode 180 made of a material having a relatively high resistance, and includes aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), and molybdenum. It is preferable to form one selected from the group of conductive materials including alloy (MoNd), copper (Cu), titanium (Ti) and tantalum (Ta), and may be omitted if necessary.

In this case, the gap spacer 190 maintains a constant cell gap G1 between the first substrate 105 and the second substrate 110. The touch spacer 192 is additionally designed to exert a touch screen function, and when the external force or the force due to the touch pen does not act on a specific position, the sensor is transparent to cover the side and the bottom of the touch spacer 192. The electrode 196 is maintained at a predetermined distance apart from the first substrate 105 by the touch gap G2.

The touch gap G2 may vary depending on the height of the cell gap G1 between the first substrate 105 and the second substrate 110, and the separation distance is preferably designed in a range of 1 to 2 μm.

As a method of forming the height between the gap spacer 190 and the touch spacer 192 to be different, a method using a half-tone mask made of a transmissive part, a blocking part, and a transflective part may be applied. The present invention is not limited thereto, and may be formed using a general mask including only the transmission part and the blocking part. In particular, when using a general mask, the width W2 of the touch spacer 192 is designed to be narrower than the width W1 of the gap spacer 190, so that the first height L1 and the touch spacer of the gap spacer 190 are designed to be narrow. It becomes possible to produce the 2nd height L2 of 192 differently.

At this time, the operation principle of the organic light emitting device 100 according to the present invention will be described. When an external force or a force caused by the touch pen is applied to the first or second substrates 105 and 110 at a specific position, the organic spacer 150 maintains a constant cell gap G1 by the gap spacer 190. Force is transmitted to cause warpage in the first or second substrates 105 and 110.

Therefore, when bending occurs in the organic panel 150 at a specific position by a force applied selectively, the side and bottom surfaces of the touch spacer 192 spaced apart by the touch gap G2 corresponding to the specific position may be removed. The covering sensor transparent electrode 198 and the second electrode 180 come into contact with each other. As a result, the sensor transistor Tss connected to the sensor transparent electrode 198 is switched to a turn-on state. In this case, a signal by a touch is applied to an external sensor circuit unit (not shown) through a sensor data wire connected to the sensor transistor Tss, and the sensor circuit unit detects the position information of the corresponding sensor pixel region to which the touch is applied. Through this, the touch screen function can be realized.

Therefore, in the present invention, the system is additionally designed outside the organic panel 150 to implement a touch screen function, thereby inserting a touch sensor structure into the inside of the organic panel 150, that is, the second substrate 110. Through this, there is an effect that can reduce the production cost compared to the conventional external system.

4 is a circuit diagram illustrating a pixel circuit of an organic light emitting diode having a touch screen function according to the present invention.

As shown, the organic light emitting diode having the touch screen function according to the present invention includes a switching transistor (Ts), a storage capacitor (not shown), a driving transistor (Td), an organic light emitting diode (E), and a sensor transistor (Tss). Is made of.

That is, the gate wiring GL formed in one direction on the first substrate 105, the data wiring DL defining the pixel region P by crossing the gate wiring GL perpendicularly, and the gate wiring GL. ) And a switching transistor Ts positioned at the intersection of the data line DL, a driving transistor Td electrically connected to the switching transistor Ts, and an organic light emitting diode E connected to the driving transistor Td. ) Is formed.

In addition, in one direction on the second substrate 110 which is opposed to the first substrate 105, the sensor pixel region SP is vertically intersected with the sensor gate wiring SGL and the sensor gate wiring SGL. A sensor data line SDL to be defined and a sensor transistor Tss positioned at an intersection point of the sensor gate line SGL and the sensor data line SDL are formed.

In this case, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving transistor Td, and the second electrode, which is the other terminal, is connected to the first power line Vdd. .

The gate electrode of the driving transistor Td is connected to the drain electrode of the switching transistor Ts to receive a data signal, and the driving transistor Td is different from the data signal of the second power line Vss connected to the source electrode. The driving current corresponding to the driving current is generated and supplied to the organic light emitting diode E connected to the drain electrode.

Therefore, when a signal is applied through the gate line GL, the switching transistor Ts is turned on, and the signal of the data line DL is transferred to the gate electrode of the driving transistor Td. Light is output by the electric field-pole pair of the organic light emitting diode E connected thereto at the turn-on of the driving transistor Td. At this time, when the driving transistor Td is turned on, the level of the current flowing from the first power supply line Vdd to the organic light emitting diode E is determined, which causes the organic light emitting diode E to have a gray scale. (gray scale) can be implemented.

In this case, the sensor transistor Td positioned on the second substrate 110 is driven on / off by a switch SW connected thereto. That is, when the switch SW is in the off state, the sensor transistor Tss is maintained in the off state. On the other hand, when the switch SW is in the on state, the selected sensor transistor Tss is turned on, and current flowing through the sensor transistor Tss to the sensor data line SDL is transferred to the sensor data line SDL. Through the connected sensor circuit unit (not shown), the position information of the corresponding sensor pixel area SP may be detected, thereby implementing a touch screen.

FIG. 5 is a plan view illustrating a second substrate for an organic light emitting diode according to an embodiment of the present invention. In detail, FIG. 5 illustrates a unit sensor pixel in which a sensor transistor is designed.

As illustrated, the sensor gate wiring SGL is configured in one direction on the second substrate 110, and the sensor data wiring SDL is configured in the direction perpendicular to the sensor gate wiring SGL.

In addition, the auxiliary wiring 160 defining the sensor pixel region PS is formed to cross the sensor gate wiring SGL and the sensor data wiring SDL. The auxiliary line 160 is electrically insulated from the sensor gate line SGL and the sensor data line SDL, respectively, and is horizontally spaced 160a spaced in parallel with the sensor gate line SGL, and the horizontal portion 160a. It includes a vertical portion 160b vertically branched at).

A sensor transistor Tss is formed at the intersection of the sensor gate wiring SGL and the sensor data wiring SDL. The sensor transistor Tss overlaps the sensor gate electrode 152 extending from the sensor gate line SGL, and the sensor semiconductor layer 154 overlapping the sensor gate electrode 152 with the sensor gate insulating layer (not shown) therebetween. ), A sensor source electrode 142 extending from the sensor data line SDL on the sensor semiconductor layer 154, and a sensor drain electrode 144 spaced apart from the sensor source electrode 142.

In this case, the sensor semiconductor layer 154 may be formed of a single layer made of crystalline silicon (p-Si) or amorphous silicon (n + a-Si: H) containing pure amorphous silicon (a-Si: H) and impurities. It may consist of a double layer made up. In the drawing, the bottom gate method in which the sensor gate electrode 152 is located at the bottom is shown as an example, but is not limited thereto. The top gate method in which the sensor gate electrode 152 is located at the top may serve as a transistor. Any known technique can be applied.

A sensor passivation layer including a plurality of first contact holes CH1 exposing the auxiliary line 160 and a second contact hole CH2 exposing the sensor drain electrode 144 on the sensor transistor Tss. 185. In addition, a gap spacer 190 having a first height (L1 in FIG. 3) is formed on an upper side of the sensor passivation layer 185 adjacent to the auxiliary line 160. The touch spacer 192 is configured to have a second height (L2 in FIG. 3) on one side of the substrate which is spaced apart from the sensor drain electrode 144.

An upper portion of the sensor passivation layer 185 may include a transparent connection electrode 196 that contacts the auxiliary line 160 through a plurality of first contact holes CH1, and a sensor drain through the second contact hole CH2. A sensor transparent electrode 198 is connected to the electrode 144.

In this case, the plurality of first contact holes CH1 are illustrated as being formed in the horizontal portion 160a and the vertical portion 160b of the auxiliary line 160, respectively, but this is only an example and is not limited by space. The number can be applied in various ways.

Although not shown in detail in the drawings, in the case of the sensor pixel having the above-described configuration, an area corresponding to the pixel area P of FIG. 3 of the first substrate 105 may be designed, and the sensor transistor Tss may be used. Although may vary from model to model, it is desirable to design one per three, six, or nine sensor pixel areas SP.

In addition, the sensor pixel may be designed in a stripe type that is disposed in the same shape in one direction, or may be disposed in various forms such as a structure in which adjacent sensor pixels are symmetrical with each other.

The second substrate for an organic light emitting device according to the present invention can be manufactured by two methods.

Hereinafter, a method of manufacturing a second substrate for an organic light emitting diode according to a first example of the present invention will be described in detail with reference to the accompanying drawings.

6A through 6D are cross-sectional views sequentially illustrating the process sequence by cutting along the line VI-VI ′ of FIG. 5.

As shown in FIG. 6A, the auxiliary area SA, the sensor data area SD, the sensor area S, and the sensor pixel area SP are defined on the second substrate 110 (hereinafter, abbreviated as substrate). Proceed with the steps. In this case, the auxiliary area SA is an auxiliary line, the sensor data area SD is a sensor data line, the sensor area S is an area where a sensor transistor is to be formed, and the sensor pixel area SP is a sensor. This area is defined by crossing the gate wiring and the sensor data wiring.

Aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo) on the substrate 110 on which the sensor data area SD, the auxiliary area SA, the sensor area S, and the sensor pixel area SP are defined. And forming a gate metal layer (not shown) with one selected from a group of conductive materials including molybdenum alloy (MoNd), copper (Cu), titanium (Ti) and tantalum (Ta), and patterning the gate metal layer (not shown). And a sensor gate electrode 152 extending from the sensor gate wiring SGL. At the same time, the auxiliary wiring 160 is electrically insulated from the sensor gate wiring SGL and corresponds to the auxiliary region SA. The auxiliary line 160 includes a horizontal portion 160a spaced apart in parallel with the sensor gate line SGL, and a vertical portion (160b of FIG. 5) branched in a direction perpendicular to the horizontal portion 160a.

Next, an inorganic insulating material group including silicon oxide (SiO ₂ ) and silicon nitride (SiNx) on the substrate 110 on which the sensor gate wiring SGL, the sensor gate electrode 152, and the auxiliary wiring 160 are formed. The sensor gate insulating layer 135 is formed by using one of the selected ones.

As illustrated in FIG. 6B, a sensor semiconductor layer 154 is formed on the substrate 110 on which the sensor gate insulating layer 135 is formed, and a portion of the sensor gate electrode 152 overlaps with each other. The sensor semiconductor layer 154 is a single layer made of crystalline silicon (p-Si) or a double layer made of pure silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities. Can be formed. In the drawing, the bottom gate method in which the sensor gate electrode 152 is located at the bottom is shown as an example, but the present invention is not limited thereto, and the transistor may function as a transistor such as a top gate method in which the sensor gate electrode 152 is located at the top. Any known technique can be applied.

Next, aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), molybdenum alloy (MoNd), copper (Cu), titanium (Ti) and the like on the substrate 110 on which the sensor semiconductor layer 154 is formed. Forming a source and drain metal layer (not shown) with one selected from a group of conductive materials including tantalum (Ta) and patterning the same, thereby forming a sensor data line SDL perpendicular to the sensor gate line SGL; A sensor source electrode 142 extending from the sensor data line SDL and a sensor drain electrode 144 spaced apart from the sensor source electrode 142 are formed.

In this case, the sensor gate electrode 152, the sensor gate insulating layer 135, the sensor semiconductor layer 154, and the sensor source and drain electrodes 142 and 144 may be referred to as a sensor transistor Tss.

As illustrated in FIG. 6C, an inorganic insulating material including silicon oxide (SiO ₂ ) and silicon nitride (SiNx), benzocyclobutene, and photoacryl are formed on the substrate 110 on which the sensor transistor Tss is formed. The sensor passivation layer 185 is formed of one selected from the group of organic insulating materials including photo acryl.

Next, a plurality of first patterns exposing the auxiliary line 160 by selectively patterning the sensor passivation layer 185 and the sensor gate insulating layer 135 corresponding to the auxiliary line 160, the sensor drain electrode 144. The contact hole CH1 and the second contact hole CH2 exposing the sensor drain electrode 144 are respectively formed.

As shown in FIG. 6D, an upper portion of the sensor passivation layer 185 including the plurality of first contact holes CH1 and the second contact holes CH2 may be disposed on an upper side of the side that overlaps the auxiliary line 160. A gap spacer 190 having a first height L1 and a second height L2 spaced apart from the gap spacer 190 and lower than the first height L1 to one side adjacent to the sensor drain electrode 144. To form a touch spacer 192 having a. In this case, although the touch spacer 192 is formed as an upper portion overlapping with the sensor gate line GL, the present invention is not limited thereto. The touch spacer 192 may be formed on the upper portion overlapping with the sensor transistor Tss.

Next, one selected from the group of transparent conductive materials including indium tin oxide (ITO) and indium zinc oxide (IZO) on the substrate 110 on which the gap spacer 190 and the touch spacer 192 are formed. A transparent metal layer (not shown) is formed and patterned to contact the auxiliary wiring 160 through the plurality of first contact holes CH1, respectively, and cover the side and top surfaces of the gap spacer 190 to cover the sensor pixels. The transparent connection electrode 196 extending to the area PA is formed. At the same time, it is spaced apart from the transparent connection electrode 196 to be electrically insulated, and is connected to the sensor drain electrode 144 through the second contact hole CH2, and the side and top surfaces of the touch spacer 192 are separated from each other. A covering sensor transparent electrode 198 is formed.

As mentioned above, the 2nd board | substrate for organic electroluminescent elements which concerns on the 1st example of this invention can be manufactured.

Since the method of manufacturing the second substrate for an organic light emitting device according to the second example of the present invention is the same until the process of forming the first example and the sensor transistor, duplicate description thereof will be omitted.

7A and 7B are cross-sectional views sequentially illustrating a method of manufacturing a second substrate for an organic light emitting diode according to a second example of the present invention, in the order of a process. FIG. VI-VI ′ line of FIG. 5 is the same as that of the first example. It is shown by cutting along.

As shown in FIG. 7A, a gap spacer 190 having a first height L1 is spaced apart from the gap spacer 190 on the substrate 110 on which the sensor transistor Tss is formed, and the sensor drain electrode is spaced apart from the gap spacer 190. A touch spacer 192 having a second height L2 that is lower than the first height L1 is formed on one side adjacent to 144.

Next, on the substrate 110 on which the gap spacer 190 and the touch spacer 192 are formed, an inorganic insulating material including silicon oxide (SiO ₂ ) and silicon nitride (SiNx), or benzocyclobutene and a photo The sensor protection layer 185 is formed of one selected from the group of organic insulating materials including photo acryl.

Next, a plurality of first patterns exposing the auxiliary line 160 by selectively patterning the sensor passivation layer 185 and the sensor gate insulating layer 135 corresponding to the auxiliary line 160, the sensor drain electrode 144. The contact hole CH1 and the second contact hole CH2 exposing the sensor drain electrode 144 are respectively formed.

As shown in FIG. 7B, an indium-tin-oxide (ITO) and an indium-zink- are formed on the sensor passivation layer 185 including the plurality of first and second contact holes CH1 and CH2. A transparent metal layer (not shown) is formed with one selected from a group of transparent conductive materials including oxide (IZO) and patterned to contact the auxiliary wiring 160 through the plurality of first contact holes CH1, respectively, and a gap. A transparent connection electrode 196 covering the side surface and the top surface of the spacer 190 and extending to the sensor pixel area SP is formed. At the same time, the transparent connection electrode 196 is spaced apart to be electrically insulated, and is connected to the sensor drain electrode 144 through the second contact hole CH2, and the side and top surfaces of the touch spacer 192 are separated. A covering sensor transparent electrode 198 is formed.

At this time, in the second example of the present invention, unlike the first example, the gap spacer 190 and the touch spacer 192 are covered by the sensor passivation layer 185. Since the spacer and the touch spacer can be prevented from being corroded, there is an advantage in that reliability is superior to that of the first example.

However, the present invention is not limited to the above embodiments, and it will be apparent that various modifications and changes can be made without departing from the spirit and the spirit of the present invention.

1 is a circuit diagram showing a unit pixel of a conventional active matrix organic light emitting device.

2 is a schematic cross-sectional view of an organic light emitting diode according to the related art.

3 is a cross-sectional view showing an organic light emitting display device having a touch screen function according to the present invention.

4 is a circuit diagram illustrating a unit sensor pixel of an organic light emitting diode having a touch screen function according to the present invention.

5 is a plan view showing a second substrate for an organic light emitting device according to the present invention.

6A through 6D are cross-sectional views sequentially illustrating the process sequence by cutting along line VI-VI ′ of FIG. 5.

7A and 7B are cross-sectional views sequentially illustrating a method of manufacturing a second substrate for an organic light emitting diode according to a second example of the present invention, in the order of processes;

* Explanation of symbols for the main parts of the drawings *

105: first substrate 110: second substrate

135 sensor gate insulating film 145 gate insulating film

150: organic panel 155: protective film

160: auxiliary wiring 165: bank layer

170: first electrode 175: organic light emitting layer

180: second electrode 185: sensor protective film

190: gap spacer 192: touch spacer

196: transparent connection electrode 198: sensor transparent electrode

Td: driving transistor Tss: sensor transistor

G1: cell gap G2: touch gap

Claims (10)

A first substrate and a second substrate bonded to each other; Gate wiring and data wiring vertically crossing the upper surface of the first substrate to define a pixel region; A switching transistor positioned at an intersection point of the gate wiring and the data wiring, and a driving transistor connected to the switching transistor; An organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode connected to the driving transistor; Sensor gate wirings and sensor data wirings vertically crossing the lower surface of the second substrate to define a sensor pixel region; An auxiliary wiring electrically insulated from the sensor gate wiring and sensor data wiring; A sensor transistor positioned at an intersection of the sensor gate wiring and the sensor data wiring; A sensor passivation layer covering a bottom surface of the sensor transistor and the auxiliary line; A first spacer having a first height toward a lower surface of the sensor protective layer, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; A transparent connection electrode covering the side surface and the lower surface of the first spacer and connected to the second electrode and the auxiliary line by the pixel area, and electrically insulated from the transparent connection electrode, A sensor transparent electrode connected to the sensor transistor while covering a lower surface and spaced apart from the second electrode by a touch gap. An organic light emitting device comprising a. The method of claim 1, The touch gap is an organic light emitting device, characterized in that designed in the range of 1 ~ 2μm. The method of claim 1, And one or more sensor transistors are designed for each of three, six, or nine sensor pixel areas. The method of claim 1, In the sensor transparent electrode and the second electrode electrically separated by the touch gap, a sensor connected to the sensor transistor at the moment when the sensor transparent electrode and the second electrode located in a specific sensor pixel region is contacted by an external force An organic light emitting diode, characterized in that a touch screen function is implemented by detecting a position of a corresponding pixel area of a sensor through a data line. The method of claim 1, The first spacer is the auxiliary wiring, and the second spacer is an organic light emitting device, characterized in that configured in the upper portion overlapping with the sensor gate wiring or sensor transistor, respectively. The method of claim 1, Wherein the first electrode is one selected from the group of opaque conductive materials including calcium, magnesium, and aluminum, and the second electrode is one selected from the group of transparent conductive materials including indium tin oxide and indium zinc oxide. An organic electroluminescent device. A sensor gate wiring and a sensor gate electrode configured in one direction on the substrate; An auxiliary line configured to be electrically insulated from the sensor gate line; A sensor gate insulating film covering the sensor gate electrode, the wiring, and the auxiliary wiring; A sensor semiconductor layer overlapping the sensor gate electrode with the sensor gate insulating layer interposed therebetween; Sensor data wirings on the sensor gate insulating film to define a sensor pixel region crossing the sensor gate wirings, and sensor source and drain electrodes extending from the sensor data wirings and spaced apart from each other; A sensor passivation layer covering the sensor data line, the sensor source and drain electrodes, and including first and second contact holes exposing the auxiliary line and the sensor drain electrode; A first spacer having a first height corresponding to the sensor pixel region on the sensor passivation layer, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; A transparent connection electrode covering the side surface and the upper surface of the first spacer and connected to the second electrode and the auxiliary line in correspondence with each sensor pixel region, and electrically insulated from the transparent connection electrode, A sensor transparent electrode covering an upper surface and connected to the sensor transistor The second substrate for an organic light emitting device comprising a. Forming a sensor gate line and a sensor gate electrode in one direction on the substrate, and an auxiliary line spaced apart from the sensor gate line; Forming a sensor gate insulating film covering the sensor gate electrode and the wiring and the auxiliary wiring; Forming a sensor semiconductor layer overlapping the sensor gate electrode with the sensor gate insulating layer interposed therebetween; Forming sensor data wires on the sensor gate insulating film to define a sensor pixel area crossing the sensor gate wires, and sensor source and drain electrodes extending from the sensor data wires and spaced apart from each other; Forming a sensor passivation layer covering the sensor data line, the sensor source and the drain electrode, and including first and second contact holes exposing the auxiliary line and the sensor drain electrode; Forming a first spacer having a first height corresponding to the sensor pixel region on the sensor passivation layer, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; A transparent connection electrode covering the side surface and the upper surface of the first spacer and connected to the second electrode and the auxiliary line in correspondence with each sensor pixel region, and electrically insulated from the transparent connection electrode, Forming a sensor transparent electrode covering an upper surface and connected to the sensor transistor Method for manufacturing a second substrate for an organic light emitting device comprising a. The method of claim 8, Wherein the auxiliary line is formed of one selected from a group of conductive materials including aluminum, aluminum alloy, molybdenum, molybdenum alloy, copper, titanium, and tantalum. Forming a sensor gate line and a sensor gate electrode in one direction on the substrate, and an auxiliary line spaced apart from the sensor gate line; Forming a sensor gate insulating film covering the sensor gate electrode and the wiring and the auxiliary wiring; Forming a sensor semiconductor layer overlapping the sensor gate electrode with the sensor gate insulating layer interposed therebetween; Forming sensor data wires on the sensor gate insulating film to define a sensor pixel area crossing the sensor gate wires, and sensor source and drain electrodes extending from the sensor data wires and spaced apart from each other; Forming a first spacer having a first height corresponding to the sensor pixel region, and a second spacer having a second height lower than the first height to one side spaced apart from the first spacer; Forming a sensor passivation layer covering the sensor data line, the sensor source and the drain, and the first and second spacers, the first and second contact holes exposing the auxiliary line and the sensor drain electrode; A transparent connection electrode covering the side surface and the top surface of the first spacer on the sensor passivation layer and corresponding to the sensor pixel region and electrically insulated from the transparent connection electrode; Forming a sensor transparent electrode connected to the sensor transistor and covering side and top surfaces of the spacer; Method for manufacturing a second substrate for an organic light emitting device comprising a.

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