KR20100037000A - Composite electronic device, manufacturing method thereof, and connection structure of composite electronic device - Google Patents

Abstract

PURPOSE: A composite electronic device, a method for manufacturing the same and a connection structure of the same are provided to improve the heat resistance property of the device by combining an inductor device and an electrostatic discharge protective device. CONSTITUTION: An inductor device and an electrostatic discharge protective device are formed between two magnetic substrates(11a, 11b). The inductor device includes insulation layers and conductive patterns. The insulation layers are composed of resins. The conductive patterns are formed on the insulation layers. The electrostatic discharge protective device includes a base insulation layer, a pair of electrodes and an electrostatic discharge absorbent layer. The electrostatic discharge absorbent layer includes composite of an insulation inorganic material and a conductive inorganic material. The conductive inorganic material is discontinuously dispersed in the matrix of the insulation inorganic material.

Description

COMPONENT ELECTRONIC DEVICE, MANUFACTURING METHOD THEREOF, AND CONNECTION STRUCTURE OF COMPOSITE ELECTRONIC DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite electronic component and a method for manufacturing the same, and more particularly, to a structure of a composite electronic component configured by combining inductor elements and electrostatic discharge (ESD) protection elements. The invention also relates to a connection structure between such a composite electronic component and signal lines.

Recently, the USB 2.0 standard and high-definition multimedia interface (HDMI) as a high-speed signal transmission interface has been widely spread, and is used in many digital devices such as personal computers and digital high definition televisions. These interfaces employ a differential signal system that transmits a differential signal (differential mode signal) using a pair of signal lines, unlike a single-end transmission system that has been commonly used for a long time.

Differential transmission systems are superior in that they are less susceptible to exogenous noise than single-ended transmission systems, as well as less radiated electromagnetic fields from signal lines. Thus, the signal can have a small amplitude, so that the system can perform signal transmission at higher speed than a single-ended transmission system by shortening the rise time and the fall time based on the small amplitude.

13 is a circuit diagram of a general differential transmission circuit.

The differential transmission circuit shown in FIG. 13 includes a pair of signal lines 1 and 2, an output buffer 3 for supplying differential mode signals to the signal lines 1 and 2, and the signal lines 1 and 2 thereof. And an input buffer 4 that receives the differential mode signal from it. In this configuration, the input signal IN given to the output buffer 3 is transmitted to the input buffer 4 via the pair of signal lines 1 and 2 and reproduced as the output signal OUT. As described above, this differential transmission circuit is characterized in that the radiated electromagnetic field generated from the signal lines 1 and 2 is small. However, this circuit generates a relatively large radiated electromagnetic field when the common noise (common mode noise) is superimposed on the signal lines 1 and 2. In order to reduce the radiated electromagnetic field generated by the common mode noise, it is effective to insert the common mode choke coil 5 in the signal lines 1 and 2 as shown in FIG.

The common mode choke coil 5 has low impedance for differential components (differential mode signals) transmitted over signal lines 1 and 2, and high impedance for in-phase components (common mode noise). There is a characteristic. Thus, by inserting the common mode choke coil 5 into the signal lines 1 and 2, it is possible to block the common mode noise transmitted through the pair of signal lines 1 and 2 without substantially attenuating the differential mode signal. Can be.

Modern high speed digital interfaces, such as HDMI, use ICs that are very sensitive to static electricity because they handle fine signals at high transmission rates. Therefore, electrostatic discharge (ESD) is a big problem. In order to prevent the IC from being damaged by ESD, a varistor is used as an ESD countermeasure between the signal line and the base. However, when a varistor is used, the signal waveform is inactivated and the signal quality is degraded. Therefore, a lower capacity ESD countermeasure device is required. For example, as shown in FIG. 14, Japanese Patent Application Laid-Open No. 2008-28214 connects a coil 8 in series with signal lines 7 connected to an IC 6, and each signal line is connected. By connecting the ESD protection component 9 between (7) and the ground, an ESD protection circuit having an electrostatic capacitance in which the ESD protection component 9 is set to 0.3 pF or less is proposed (Fig. Of Japanese Patent Application Laid-Open No. 2008-28214). 8).

Japanese Patent Application Laid-Open No. 2007-214166 discloses a structure having a voltage-dependent resistance material with ESD protection provided on top of a composite electronic component having a common mode noise filter and ESD protection in one package. It starts. According to this structure, a voltage-dependent resistive material may be provided after sintering a laminate including many insulating layers. According to this arrangement, it is possible to prevent the reduction of the ESD protection function by oxidation and cracking of the voltage-dependent resistive material during sintering. Thus, the ESD protection function can be improved.

However, according to the common mode filter disclosed in Japanese Patent Application Laid-Open No. 2007-214166, the voltage-dependent resistance material constituting the ESD protection elements contains a resin. Therefore, ESD protection elements need to be provided on top because of manufacturing step constraints that are a major limitation in design. The voltage-dependent resistive material is filled in a very fine gap of about 10 μm. At the top, the irregular area is large in the plane by the structure in which many insulating layers formed with the conductor pattern are stacked. Therefore, it is quite difficult to stably form a very fine gap. Moreover, when forming the ESD protection elements on the top layer, the manufacturing step becomes complicated and the manufacturing cost increases.

It is therefore an object of the present invention to provide a compact and high performance composite electronic component constructed by combining a common mode filter and ESD protection elements having small capacitance and excellent discharge characteristics, heat resistance and weatherability. It is another object of the present invention to provide a manufacturing method for producing such a high quality composite electronic component. Another object of the present invention is to provide a connection structure of such a composite electronic component and signal lines.

In order to solve the above problems, the composite electronic component according to the present invention comprises an inductor element and an ESD protection element formed between two magnetic substrates, the inductor element is an insulating layer made of resin, and the insulating layer And conductive patterns formed on the substrate, wherein the ESD protection device includes a base insulating layer, the pair of electrodes arranged through a gap formed between the electrodes on the base insulating layer as a pair of electrodes, and at least the And an ESD absorbing layer arranged between the electrodes, the ESD absorbing layer comprising a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in the matrix of the insulating inorganic material.

According to the present invention, a composite electronic component includes low-voltage discharge type ESD protection elements having very small capacitance, low discharge start voltage, and excellent discharge resistance. Therefore, the composite electronic component can transmit a signal equivalent to a signal having no ESD countermeasure, thereby suppressing a decrease in characteristic impedance. In addition, since the composite of the conductive inorganic material and the insulating inorganic material is configured as an ESD protection material, the pressure resistance can be significantly increased, and the weather resistance of the external environment such as temperature and humidity can be significantly increased. Since the inductor element and the ESD protection element are formed in one chip, it is possible to provide a very compact and high performance electronic component.

In this specification, “composite” means a state in which a conductive inorganic material is dispersed in a matrix of an insulating inorganic material. This is not only a state in which the conductive inorganic material is uniformly or randomly dispersed in the matrix of the insulating inorganic material, but also a state in which the aggregate of the conductive inorganic material is dispersed in the matrix of the insulating inorganic material, that is, generally referred to as a sea-island structure. The concept involves state. In the present specification, "insulation" means a resistance of 0.1 Ωcm or more, and "conductive" means a resistance of less than 0.1 Ωcm. So-called "semiconductivity" is included in the electron as long as its specific resistance is 0.1? Cm or more.

In the present invention, the inductor element preferably comprises first and second spiral conductors formed on a plane perpendicular to the stacking direction, wherein the first and second spiral conductors constitute a common mode filter and magnetically Combined. According to this configuration, the common mode noise can be eliminated while preventing ESD. Thus, the inductor element can be preferably used to remove noise in high speed digital signal lines requiring ESD measures.

In the present invention, the capacitance of the ESD protection element preferably has a value of 0.35 kΩ or less. If the ESD protection device's capacitance is less than 0.35Ω, it can meet the digital visual interface (DVI) and the differential-transmit impedance standard (100 ± 15Ω) of HDMI's high-speed differential transmission line. Thus, breakage of the IC by ESD can be reliably prevented without providing a practical effect on the signal quality.

In the present invention, the resin material is either a polyimide resin or an epoxy resin. The insulating inorganic material is selected from the group of A1 ₂ O ₃ , TiO ₂ , SiO ₂ , ZnO, In ₂ O ₃ , NiO, CoO, SnO ₂ , V ₂ O ₅ , CuO, MgO, ZrO ₂ , AlN, BN and SiC At least one kind is preferable. Since these metal oxides are excellent in insulation, heat resistance and weather resistance, these metal oxides function effectively as a material constituting the insulating matrix of the composite. Therefore, it is possible to realize a high functional ESD protection element having excellent discharge characteristics, heat resistance and weather resistance. Since these metal oxides are obtainable at low cost, and the sputtering method can be applied to these metal oxides, productivity and economy can be increased.

In the present invention, the conductive inorganic material is preferably at least one metal selected from the group of C, Ni, Cu, Au, Ti, Cr, Ag, Pd, and Pt or a metal compound of these metals. By combining these metals or metal compounds in a state of discontinuous dispersion in a matrix of an insulating inorganic material, it is possible to realize high functional ESD protection devices having excellent discharge characteristics, heat resistance and weather resistance.

In the present invention, the ESD absorbing layer is preferably a composite formed by sequentially sputtering an insulating inorganic material and a conductive inorganic material, or a composite formed by simultaneously sputtering an insulating inorganic material and a conductive inorganic material. By this configuration, the composite containing the conductive inorganic material in a state of discontinuous dispersion in the matrix of the insulating inorganic material can be easily obtained with good reproducibility.

In the present invention, the pair of electrodes is preferably formed on the surface of any one of the magnetic substrates through the base insulating layer. According to this configuration, since the electrodes arranged to face each other are formed on the magnetic substrate of satisfactory flatness, the gap between the electrodes can be formed stably.

In the present invention, the gap provided between the pair of electrodes is arranged so as not to overlap the conductor patterns of the inductor element seen from the stacking direction. According to this configuration, the center portion of the ESD protection elements is provided at a position away from the conductor pattern. Therefore, when the ESD protection elements are partially destroyed by the ESD, the influence on the upper and lower layers can be suppressed, thereby realizing a composite electronic component having high reliability.

The composite electronic component according to the present invention includes a common mode filter layer and an ESD protection layer provided between two magnetic substrates, and the common mode filter layer includes first and second insulating layers made of resin, and on the first insulating layer. A first spiral conductor formed on the first spiral conductor, and a second spiral conductor formed on the second insulating layer, wherein the ESD protection layer is connected to one end of the first spiral conductor, and the second spiral conductor A second ESD protection element connected to one end of the conductor, wherein the first and second spiral conductors are formed in a plane direction perpendicular to the stacking direction, are arranged to magnetically couple with each other, and the first and second Each of the ESD protection elements is a pair of electrodes, the pair of electrodes arranged through the gap formed between the electrodes on the base insulating layer, and at least the ES arranged between the electrodes. A D absorbing layer, wherein the ESD absorbing layer comprises a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulating inorganic material.

The composite electronic component according to the present invention further includes a third ESD protection element connected to the other end of the first spiral conductor, and a fourth ESD protection element connected to the other end of the second spiral conductor. The third and fourth ESD protection elements have the same configuration as that of the first and second ESD protection elements. According to this configuration, since the ESD protection elements are connected to both a pair of input terminals and a pair of output terminals of the composite electronic component, the composite electronic component can be mounted without requiring awareness of the connection direction to the pair of signal lines. Can be. Therefore, handling at the time of manufacture can be made easy.

It is also an object of the present invention to provide a composite electronic component having a pair of signal lines, a first ESD protection element connected to one end of the first spiral conductor and a second ESD protection element connected to one end of the second spiral conductor. A connection structure of a composite electronic component having a connection structure and one end of a first spiral conductor and one end of a second spiral conductor connected to an input side of the pair of signal lines can be achieved. When one ends of the first and second spiral conductors are connected to the input side of the signal lines, the first and second ESD protection elements are provided at the pre-stage of the first and second spiral conductors. The signals reflected from the first and second helical conductors are considered to overlap the input waveform and be absorbed by the ESD protection elements at higher voltages. Thus, ESD can be safely absorbed.

In addition, the method of manufacturing a composite electronic component according to the present invention includes forming an ESD protection layer on the surface of the first magnetic substrate, forming a common mode filter layer on the surface of the ESD protection layer, and the common mode. Forming a second magnetic substrate on the surface of the filter layer. The forming of the ESD protection layer may include forming a base insulating layer on the surface of the first magnetic substrate, the pair of electrodes being arranged through a gap formed between the electrodes on the surface of the base insulating layer. Forming the pair of electrodes, and forming an ESD absorbing layer arranged at least between the electrodes. The ESD absorbing layer includes a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in the matrix of the insulating inorganic material.

According to the present invention, an ESD protection element having a very small capacitance can be formed. Therefore, an equivalent signal can be transmitted for the signal without the ESD countermeasure, so that the reduction of the characteristic impedance can be suppressed. It is possible to fabricate very compact and high functional electronic components with inductor elements and ESD protection elements formed in one chip. According to the present invention, electrodes arranged to face each other can be formed on a magnetic substrate of satisfactory flatness, so that gaps between the electrodes can be stably formed.

In the present invention, the step of forming the common mode filter layer includes a step of alternately forming an insulating layer made of a resin and a conductor pattern. The insulating layer, the conductor pattern, the base insulating layer and the electrode are preferably formed by a thin film forming method. According to this apparatus, since the ESD protection layer and the common mode filter layer are formed consistently by the thin film forming method, the composite electronic component can be manufactured without going through a specific manufacturing step.

As described above, according to the present invention, it is possible to provide a compact and high performance composite electronic component which is constituted by combining a common mode filter and an ESD protection element having small capacitance and excellent discharge characteristics, heat resistance and weather resistance. In particular, the composite electronic component according to the present invention has a significant influence on a high speed signal interface such as high speed HDMI having a large signal-transmission amount and a very large transmission speed. In addition, according to the present invention, it is possible to provide a connection structure with signal lines that enable the composite electronic component to function effectively.

The present invention can provide a compact and high performance composite electronic component constructed by combining a common mode filter and an ESD protection element having small capacitance and excellent discharge characteristics, heat resistance and weather resistance. In addition, the present invention can provide a manufacturing method for producing such a high quality composite electronic component. In addition, the present invention can provide a connection structure of such a composite electronic component and signal lines.

The above and other objects, features and advantages of the present invention will become more apparent with reference to the following detailed description of the invention with reference to the accompanying drawings.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic perspective view showing an external structure of a composite electronic component according to a first embodiment of the present invention.

As shown in FIG. 1, the composite electronic component 100 according to the first embodiment is a thin film common mode filter having an ESD protection function, and includes first and second magnetic substrates 11a and 11b, and a first one. The functional layer 12 is interposed between the magnetic substrate 11a and the second magnetic substrate 11b. The first to sixth terminal electrodes 13a to 13f are formed on the outer circumference of the laminate composed of the first magnetic substrate 11a, the functional layer 12 and the second magnetic substrate 11b. The first and second terminal electrodes 13a and 13b are formed on the first side surface 10a. The third and fourth terminal electrodes 13c and 13d are formed on the second side face 10b opposite the first side face 10a. The fifth terminal electrode 13e is formed on the third side surface 10c perpendicular to the first and second side surfaces 10a and 10b. The sixth terminal electrode 13f is formed on the fourth side face 10d opposite to the third side face.

The first and second magnetic substrates 11a and 11b physically protect the functional layer 12 and use as a closed magnetic path of the common mode filter. As the material of the first and second magnetic substrates 11a and 11b, sintered ferrite, composite ferrite (resin containing powder ferrite), and the like can be used. The first and second magnetic substrates 11a and 11b of this embodiment may have a single layer structure or a multilayer structure.

2 is a circuit diagram showing the configuration of the composite electronic component 100.

As shown in FIG. 2, the composite electronic component 100 includes inductor elements 14a and 14b, and ESD protection elements 15a and 15b, which function as a common mode choke coil. One ends of the inductor elements 14a and 14b are connected to the first and second terminal electrodes 13a and 13b, respectively, and the other ends of the inductor elements 14a and 14b are respectively the third and fourth terminal electrodes ( 13c and 13d). One ends of the ESD protection elements 15a and 15b are connected to the first and second terminal electrodes 13a and 13b, respectively, and the other ends of the ESD protection elements 15a and 15b are respectively the fifth and sixth terminal electrodes. It is connected to 13e and 13f. As shown in FIG. 13, the composite electronic component 100 is mounted on a pair of signal lines. In this case, the first and second terminal electrodes 13a and 13b are connected to the input side of the signal lines, and the third and fourth terminal electrodes 13c and 13d are connected to the output side of the signal lines. The fifth and sixth terminal electrodes 13e and 13f are connected to the base line.

3 is a schematic exploded perspective view showing an example of the layer structure of the composite electronic component 100.

As shown in FIG. 3, the composite electronic component 100 includes a first and second magnetic substrates 11a and 11b, and a functional layer interposed between the first magnetic substrate 11a and the second magnetic substrate 11b. And (12). The functional layer 12 is constituted by the common mode filter layer 12a and the ESD protection layer 12b.

The common mode filter layer 12a is formed on the insulating layers 16a to 16e, the magnetic layer 16f, the adhesive layer 16g, the first spiral conductor 17 formed on the insulating layer 16b, and the insulating layer 16c. A second spiral conductor 18, a first lead conductor 19 formed on the insulating layer 16a, and a second lead conductor 20 formed on the insulating layer 16d.

The insulating layers 16a to 16e function to insulate between the conductor patterns or the conductor patterns and the magnetic layer 16f, and to ensure the flatness of the base surface on which the conductor patterns are formed. As for the material of the insulating layers 16a to 16e, it is preferable to use a resin which is excellent in electrical and magnetic insulation and has good workability. Preferably, polyimide resins and epoxy resins are used. Preferably, Cu, Al, etc. which are excellent in electroconductivity and workability are used for a conductor pattern. Conductor patterns can be formed by an etching method using photolithography and an additive method (plating).

Openings 25 penetrating the insulating layers 16b to 16e inside the first and second spiral conductors 17 and 18 are provided as central regions of the insulating layers 16b to 16e. The magnetic material 26 forming the closed path is filled in the opening 25 between the first magnetic substrate 11a and the second magnetic substrate 11b. It is preferable that a compound ferrite or the like be used for the magnetic material 26.

The magnetic layer 16f is formed on the surface of the insulating layer 16e. The magnetic material 26 is formed in the opening 25 by curing the paste of the composite ferrite (resin containing magnetic body powder). In curing, the resin shrinks and nonuniformity occurs in the openings. In order to reduce this nonuniformity, it is preferable to coat the paste not only inside the opening 25 but also on the entire surface of the insulating layer 16e. In order to secure such flatness, the magnetic layer 16f is formed.

The adhesive layer 16g is a layer necessary for bonding the magnetic substrate 11b to the magnetic layer 16f. In addition, the adhesive layer 16g functions to suppress the nonuniformity of the surfaces of the magnetic substrate 11b and the magnetic layer 16f to increase the precise adhesion. Although not specifically limited, an epoxy resin, a polyimide resin, and a polyamide resin can be used as the material of the adhesive layer 16g.

The first spiral conductor 17 corresponds to the inductor element 14a shown in FIG. The inner circumferential end of the first spiral conductor 17 is connected to the first terminal electrode 13a through the insulating layer 16b via the first contact-hole conductor 21 and the first lead conductor 19. The outer circumferential end of the first spiral conductor 17 is connected to the third terminal electrode 13c via the third lead conductor 23.

The second spiral conductor 18 corresponds to the inductor element 14b shown in FIG. The inner circumferential end of the second spiral conductor 18 is connected to the second terminal electrode 13b through the insulating layer 16d via the second contact-hole conductor 22 and the second lead conductor 20. The outer circumferential end of the second helical conductor 18 is connected to the fourth terminal electrode 13d via the fourth lead conductor 24.

The first and second spiral conductors 17 and 18 have the same planar shape and are provided in the same position as in the plan view. The first and second helical conductors 17 and 18 completely overlap each other, so that a strong magnetic coupling occurs between the first helical conductor 17 and the second helical conductor 18. Based on the above configuration, the conductor patterns in the common mode filter layer 12a constitute a common mode filter.

The ESD protection layer 12b includes a base insulating layer 27, first and second gap electrodes 28 and 29 formed on the surface of the base insulating layer 27, and first and second gap electrodes 28. And an ESD absorbing layer 30 covering 29). The layer structure near the first gap electrode 28 is a portion that functions as the first ESD protection element 15a shown in FIG. 2, and the layer structure near the second gap electrode 29 is the second ESD protection element 15b. ) To function as. One end of the first gap electrode 28 is connected to the first terminal electrode 13a, and the other end of the first gap electrode 28 is connected to the fifth terminal electrode 13e. One end of the second gap electrode 29 is connected to the second terminal electrode 13b, and the other end of the second gap electrode 29 is connected to the sixth terminal electrode 13f.

4 is a schematic plan view showing the positional relationship between the gap electrodes 28 and 29 and other conductor patterns.

As shown in FIG. 4, the gaps 28G and 29G held by the gap electrodes 28 and 29 are formed by the first and second spiral conductors 17 and 18 and the first and second spiral conductors constituting the common mode filter. The second lead conductors 19 and 20 are provided at positions not overlapping on the plane. Although not particularly limited, in the first embodiment, the gaps 28G and 29G are provided in the open area between the spiral conductors 17 and 18 and the opening 25 inside the spiral conductors 17 and 18. . Although the details are described below, since the ESD protection elements are partially damaged or deformed due to the absorption of the ESD, there is a risk that the conductor patterns are damaged at the same time when the conductor patterns are placed in a position overlapping the ESD protection element. However, since the gaps 28G and 29G of the ESD protection elements are provided at positions away from the conductor patterns, it is possible to suppress the influence on the upper and lower layers when the ESD protection elements are partially destroyed by ESD. A composite electronic component having high reliability can be realized.

5A and 5B are examples of the layer structure in the vicinity of the first gap electrode 28 in the ESD protection layer 12b, where FIG. 5A is a schematic plan view and FIG. 5B is a schematic sectional view. The configuration of the second gap electrode 29 is the same as the configuration of the first gap electrode 28, so that redundant description will be omitted.

The ESD protection layer 12b includes a base insulating layer 27 formed on the surface of the magnetic substrate 11a, a pair of electrodes 28a and 28b constituting the first gap electrode 28, and the electrodes ( ESD absorbing layer 30 arranged between 28a and 28b). In this ESD protective layer 12b, the ESD absorbing layer 30 functions as a low-voltage discharge type ESD protective material. ESD absorbing layer 30 is designed to ensure initial discharge between electrodes 28a and 28b through ESD absorbing layer 30 when a transient ESD voltage is applied.

The base insulating layer 27 is made of an insulating material. In the first embodiment, the base insulating layer 27 covers the entire surface of the magnetic substrate 11a from the ease of manufacture. However, if the base insulating layer 27 is at least a base of the electrodes 28a and 28b and the ESD absorbing layer 30, the base insulating layer 27 need not cover the entire surface.

As a detailed example of the base insulating layer 27, low-dielectric- of NiZn ferrite, aluminum, silica, magnesia and aluminum nitride, having a dielectric constant of 50 or less, preferably 20 or less, on the surface of the first magnetic substrate 11a. The material obtained by forming an insulating film made of a constant material can be appropriately used. The method for forming the base insulating layer 27 is not particularly limited, and known methods such as a vacuum deposition method, a reactive deposition method, a sputtering method, an ion plating method, and a gas phase method such as CVD and PVD can be applied. The film thickness of the base insulating layer 27 can be appropriately set.

The pair of electrodes 28a and 28b are arranged at a predetermined distance from each other on the surface of the base insulating layer 27. In the first embodiment, the pair of electrodes 28a and 28b are arranged to face each other with a predetermined gap distance ΔG at a predetermined position on the base insulating layer 27.

As the material constituting the electrodes 28a and 28b, for example, at least one kind of metal or alloy of metals selected from Ni, Cr, Al, Pd, Ti, Cu, Ag, Au and Pt may be mentioned. have. However, the metals are not particularly limited thereto. In the first embodiment, the electrodes 28a and 28b are formed in a rectangular shape as in the plan view, but the shape thereof is not particularly limited, and may be a comb-teeth shape or a sawtooth shape.

The gap distance ΔG between the electrodes 28a and 28b may be appropriately set in consideration of the desired discharge characteristic. Although not particularly limited, the gap distance ΔG is generally about 0.1 μm to 50 μm. From the standpoint of ensuring low-voltage initial discharge, the gap distance ΔG is more preferably about 0.1 μm to 20 μm, even more preferably about 0.1 μm to 10 μm. The thicknesses of the electrodes 28a and 28b may be appropriately set, and are generally about 0.05 μm to 10 μm, but are not particularly limited thereto.

ESD absorbing layer 30 is arranged between electrodes 28a and 28b. In the first embodiment, the ESD absorbing layer 30 is laminated on the surface of the base insulating layer 27 and on the electrodes 28a and 28b. The size, shape and layout position of the ESD absorbing layer 30 are not particularly limited as long as the ESD absorbing layer 30 is designed to ensure initial discharge between the electrodes 28a and 28b through itself when a transient voltage is applied.

The ESD absorbing layer 30 is a composite of an island-in-water structure having an aggregate of conductive inorganic materials 33 discontinuously dispersed in a matrix of the insulating inorganic material 32. In the first embodiment, the ESD absorbing layer 30 is formed by sequentially performing sputtering. Specifically, the conductive inorganic material 33 is partially (incompletely) filmed on the insulating surface of the base insulating layer 27 and on at least one of the electrodes 28a and 28b. Thereafter, the insulating inorganic material 32 is a composite of a laminated structure of a layer of conductive inorganic material 33 sputtered and dispersed in a so-called island shape and a layer of insulating inorganic material 32 covering the layer of conductive inorganic material 33. To form.

As examples of the insulating inorganic material 32 constituting the matrix, metal oxides and metal nitrides may be mentioned, but the material is not limited thereto. Taking into account insulation and cost, A1 ₂ O ₃ , TiO ₂ , SiO ₂ , ZnO, In ₂ O ₃ , NiO, CoO, SnO ₂ , V ₂ O ₅ , CuO, MgO, ZrO ₂ , AlN, BN and SiC desirable. One kind of these materials or any one of two or more kinds may be used. Among these materials, Al ₂ O ₃ or SiO ₂ is more preferably used in terms of providing high insulation to the insulating matrix. On the other hand, TiO ₂ or ZnO is more preferably used in terms of providing semiconductivity to the insulating matrix. When providing semiconductivity to the insulating matrix, ESD protection elements with good discharge start voltage and clamp voltage can be obtained. Although the method of providing semiconductivity to the insulating matrix is not particularly limited, TiO ₂ or ZnO may be used as a single material, or these materials may be used together with other insulating inorganic materials 32. In particular, TiO ₂ tends to lose oxygen easily at the time of sputtering in an argon atmosphere and to have high conductivity. Therefore, it is particularly preferable to use TiO ₂ to provide semiconductivity to the insulating matrix. In addition, the insulating inorganic material 32 serves as a protective layer that protects the pair of electrodes 28a and 28b and the conductive inorganic material 33 from an additional layer (e.g., insulating layer 16a) positioned over the upper layer. Function

As an example of the conductive inorganic material 33, metals, alloys, metal oxides, metal nitrides, metal carbides and metal borides may be mentioned. However, the conductive inorganic material 33 is not limited to these materials. In consideration of conductivity, C, Ni, Cu, Au, Ti, Cr, Ag, Pd and Pt, or alloys of these materials are preferred.

The combination of Cu, SiO _2, and Au is particularly preferable for the combination of the electrode 28, the insulating inorganic material 32, and the conductive inorganic material 33 constituting the ESD absorbing layer 30. ESD protection devices constructed from these materials are not only superior in electrical properties but also very advantageous in workability and cost. In particular, a composite of an island-in-the-sea structure having an aggregate of irregularly dispersed island-shaped conductive inorganic materials 33 can be formed with high precision and easily.

The total thickness of the ESD absorbing layer 30 is not particularly limited and may be appropriately set. From the viewpoint of forming a thinner film, the total thickness is preferably 10 nm to 10 m. More preferably, the total thickness is from 15 nm to 1 μm, even more preferably from 15 nm to 500 nm. While forming the layer of the discretely dispersed island-shaped conductive inorganic material 33 and the matrix layer of the insulating inorganic material 32 as in the first embodiment, the layer thickness of the conductive inorganic material 33 is 1 nm. It is preferable that it is-10 nm, It is preferable that the layer thickness of the insulating inorganic material 32 is 10 nm-10 micrometers, It is more preferable that it is 10 nm-1 micrometer, It is still more preferable that it is 10 nm-500 nm.

The method of forming the ESD absorbing layer 30 is not limited to the sputtering method described above. The ESD absorbing layer 30 applies a known thin film forming method to insulate the insulating inorganic material 32 and the conductive inorganic material 33 onto the insulating surface of the base insulating layer 27 and at least one of the electrodes 28a and 28b. It can be formed by providing.

In the ESD protection layer 12b of the first embodiment, the ESD absorbing layer 30 including the island-shaped conductive inorganic material 33 discontinuously dispersed in the matrix of the insulating inorganic material 32 is a low-voltage discharge type ESD. It functions as a protective material. By using this configuration, it is possible to realize high performance ESD protection elements having small capacitance, low discharge start voltage and excellent discharge resistance. In order for the ESD absorbing layer 30 to function as a low-voltage discharge type ESD protection material, a composite composed of at least an insulating inorganic material 32 and a conductive inorganic material 33 is used. Therefore, the heat resistance is increased in comparison with the heat resistance of the conventional organic-inorganic composite film described above, and properties are not easily changed by external environments such as temperature and humidity. As a result, reliability is increased. ESD absorbing layer 30 can be formed by a sputtering method. Thus, productivity and economy are further increased. The ESD protection elements in the first embodiment partially disperse the electrodes 28a and 28b in the ESD absorption layer 30 by applying a voltage between the electrodes 28a and 28b. It can be configured to include elements that make up 28a and 28b.

6 is a schematic diagram illustrating the principle of ESD protection elements.

As shown in FIG. 6, when a discharge voltage based on ESD is applied between a pair of electrodes 28a and 28b, it is discontinuously dispersed in the matrix of insulating inorganic material 32 as shown by the arrow. A discharge current flows from the electrode 28a to the electrode 28b (ground) through an additional route constituted by the island-shaped conductive inorganic material 33. In this case, the conductive inorganic material 33 at the ground point having a large energy density at the current route is destroyed together with the insulating inorganic material 32, and the discharge energy of the ESD is absorbed. Even if the broken route becomes non-conductive, the ESD can be absorbed a plurality of times because many current routes are formed by the island-shaped conductive inorganic material 33 discontinuously dispersed as shown in FIG.

As described above, the composite electronic component 100 according to the first embodiment includes low-voltage type ESD protection elements having small capacitance, low discharge start voltage, and excellent discharge resistance, heat resistance and weather resistance. Therefore, a composite electronic component functioning as a common mode filter including a high performance ESD protection function can be realized.

According to the first embodiment, the insulating organic material 32 and the conductive inorganic material 33 are used as the material of the ESD protection layer 12b. Since resin is not included in the various materials constituting the ESD protection layer 12b, the ESD protection layer 12b can be formed on the magnetic substrate 11a, and the common mode filter layer 12a is the ESD protection layer 12b. It can be formed on). In order to form the common mode filter layer 12a by the so-called thin film forming method, a heat treatment step at 350 ° C or higher is required. In order to form the common mode filter layer 12a by a so-called layer laminating method of sequentially stacking ceramic sheets formed with the conductor patterns, a heat treatment step at 800 ° C. is required. However, when the insulating inorganic material 32 and the conductive inorganic material 33 are used as the material of the ESD protective layer, the materials can withstand the heat treatment step to form an ESD protective element that functions normally. ESD protection elements can be formed on a sufficiently flat surface of the magnetic substrate, thereby stably forming the fine gaps of the gap electrodes.

According to the first embodiment, the positions where the gap electrodes are formed do not overlap in plane with the first and second spiral conductors constituting the common mode filter, and gap electrodes are provided at positions away from the conductor patterns. Therefore, when the ESD protection element is partially destroyed by the ESD, the influence on the upper and lower directions can be suppressed, thereby realizing a composite electronic component having higher reliability.

According to the first embodiment, as shown in FIG. 2, the composite electronic component 100 is mounted on a pair of signal lines, and the ESD protection elements 15a and 15b have a signal than the common mode filter 14a. It is provided close to the input side of the line. Therefore, the absorption efficiency of the transient voltage of the ESD protection element can be increased. In general, transient ESD voltages are abnormal voltages that are not balanced at impedance matching, so they are reflected once at the input of the common mode filter. This reflected signal overlaps the original signal waveform. The signal of increased voltage is immediately absorbed by the ESD protection elements. That is, the common mode filter at the rear of the ESD protection elements increases the magnitude of the waveform to be larger than the magnitude of the original waveform. Thus, it is possible to create a state in which the signal can be more easily absorbed by the ESD protection elements than when the signal is absorbed in the state of the low voltage level. In this way fine noise can be removed by inputting the once-absorbed signal into the common mode filter.

Next, the method of manufacturing the composite electronic component 100 according to the first embodiment will be described in detail.

7 is a flowchart illustrating manufacturing steps of the composite electronic component.

In the method of manufacturing the composite electronic component 100, the first magnetic substrate 11a is first prepared (step S101), and the ESD protection layer 12b is formed on the surface of the first magnetic substrate 11a ( Steps S102 to S104, the common mode filter layer 12a is formed on the surface of the ESD protection layer 12b (steps S105 to S111). The second magnetic substrate 11b is laminated (step S112). Thereafter, the terminal electrodes 13a to 13f are formed on the outer circumferential surface (step S113), so that the common mode filter layer 12a and the ESD protection layer (interposed between the first and second magnetic substrates 11a and 11b) are provided. The composite electronic component 100 having 12b) is completed.

The method of manufacturing the composite electronic component 100 according to the first embodiment is used to form the common mode filter layer 12a and the ESD protection layer 12b consistently by a thin film forming method. The thin film forming method is formed by coating a photosensitive resin, exposing and developing this layer, and then repeating the steps of forming the conductor patterns on the surfaces of the insulating layers to form a multilayer film alternately formed between the insulating layers and the conductor layers. It is a way. Hereinafter, the steps of forming the ESD protection layer 12b and the common mode filter layer 12a will be described in detail.

In the formation of the ESD protection layer 12b, the base insulating layer 27 is first formed on the surface of the magnetic substrate 11a (step S102). The method of forming the base insulating layer 27 is not particularly limited, and known methods such as vacuum deposition methods, reactive deposition methods, sputtering methods, ion plating methods, and vapor phase methods such as CVD and PVD can be applied. Can be. The film thickness of the base insulating layer 27 can be appropriately set.

Gap electrodes 28 and 29 are formed on the surface of the base insulating layer 27 (step S103). The gap electrodes 28 and 29 can be formed by forming a film of electrode material on the entire surface of the base insulating layer 27, and then patterning the electrode material. Since the gap distance ΔG between the pair of electrodes is very fine, such as about 0.1 μm to 50 μm, high-precision patterning is required, and flatness of the base surface is also required. The base insulating layer 27 is formed on the magnetic substrate 11a having high flatness. Since the base insulating layer 27 has high flatness, the fine gap width can be controlled with high precision.

The ESD absorbing layer 30 is formed on the surface of the base insulating layer 27 on which the gap electrodes 28 and 29 are formed (step S104). Specifically, the conductive inorganic material 33 is partially (incompletely) filmed on the insulating surface of the base insulating layer 27 and on at least one of the electrodes 28a and 28b. Thereafter, the insulating inorganic material 32 is sputtered to form a layered structure of a layer of the conductive inorganic material 33 dispersed in an island shape and a layer of the insulating inorganic material 32 covering the layer of the conductive inorganic material 33. To form a complex. Thus, the ESD protection layer 12b is completed.

In the formation of the common mode filter layer 12a, the insulating layers and the conductor patterns are alternately formed so that the insulating layers 16a to 16e, the first and second spiral conductors 17 and 18, and the first and second Lead conductors 19 and 20 are formed (steps S105 to S109). Specifically, after the insulating layer 16a is formed on the ESD protection layer 12b, the first lead conductor 19 is formed on the insulating layer 16a (step S105). Next, after the insulating layer 16b is formed on the insulating layer 16a, the contact hole 21 which forms the 1st spiral conductor 17 on the insulating layer 16b, and penetrates the insulating layer 16b is carried out. (Step S106). After the insulating layer 16c is formed on the insulating layer 16b, a second spiral conductor 18 is formed on the insulating layer 16c (step S107). Next, after the insulating layer 16d is formed on the insulating layer 16c, the second lead conductor 20 is formed on the insulating layer 16d, and the contact hole 22 penetrates the insulating layer 16d. (Step S108). Furthermore, the insulating layer 16e is formed on the insulating layer 16d (step S109).

The insulating layers 16a to 16e can be formed by spin coating a photosensitive resin on the base surface, and exposing and developing the photosensitive resin. Specifically, the insulating layers 16b to 16e can be formed as insulating layers having an opening 25. Conductor patterns, such as helical conductors, may be formed by forming a conductor layer by a vapor deposition method or a sputtering method, and then patterning the conductor layer.

The magnetic material 26 is filled in the opening 25, and the magnetic layer 16f is formed on the surface of the insulating layer 16e (step S110). Thereafter, an adhesive layer 16g is formed (step S111), and the second magnetic substrate 11b is bonded through the adhesive layer 16g (step S112). Terminal electrodes 13a to 13f are formed on the outer circumferential surface of the laminate (step S113) to complete the composite electronic component 100.

As described above, the method for manufacturing the composite electronic component according to the first embodiment is a thin film formation method for consistently forming the ESD protection layer 12b and the common mode filter layer 12a. Thus, the composite electronic component can be manufactured without special manufacturing steps. The method for manufacturing the composite electronic component according to the first embodiment is for forming the ESD protection layer 12b on the magnetic substrate 11a and the common mode filter layer 12a on the ESD protection layer 12b. will be. Thus, ESD protection elements can be formed on the surface of the magnetic substrate 11a having a relatively flat surface, thereby producing a composite electronic component having a combination of high quality ESD protection elements and a common mode filter.

Next, another example of the ESD protection layer 12b will be described.

8A and 8B are other examples of the layer structure in the vicinity of the first gap electrode 28 in the ESD protection layer 12b, where FIG. 8A is a schematic plan view and FIG. 8B is a schematic sectional view.

As shown in FIGS. 8A and 8B, the ESD protection layer 12b includes an ESD protection layer 12b according to the first embodiment except that the ESD protection layer 12b has an ESD absorption layer 34 instead of the ESD absorption layer 30. It has the same structure as the structure of a protective layer.

ESD absorbing layer 34 is a composite having conductive inorganic material 33 discontinuously dispersed in a matrix of insulating inorganic material 32. In the first embodiment, the ESD absorbing layer 34 contains a target (or insulating inorganic material) containing an insulating inorganic material 32 on the insulating surface of the base insulating layer 27 and at least one of the electrodes 28a and 28b. 32) and a target containing the conductive inorganic material 33) and sputtered (or simultaneous sputtering), and then a voltage is applied between the electrodes 28a and 28b randomly in the insulating inorganic material 32. It is formed by partially dispersing the electrodes 28a and 28b. Therefore, the ESD absorbing layer 34 in the first embodiment contains, as the conductive inorganic material 33, at least the elements constituting the electrodes 28a and 28b.

The total thickness of the ESD absorbing layer 34 is not particularly limited, but may be appropriately set. In view of achieving a thinner film, the total thickness is preferably 10 nm to 10 m. More preferably, the total thickness is 10 nm to 1 μm, even more preferably 10 nm to 500 nm.

In the ESD protection layer 12b of the first embodiment, as the ESD absorbing layer 34 functioning as the low-voltage discharge type ESD protection material, the conductive inorganic particles are dispersed in a matrix discontinuously in a matrix of the insulating inorganic material 32. A composite with material 33 is used. The same operation effects as those of the first embodiment can be obtained from this configuration.

9 is a schematic perspective view showing the layer structure of the composite electronic component 200 according to the second embodiment of the present invention.

As shown in FIG. 9, in the composite electronic component 200, the first and second lead conductors 19 and 20 of the common mode filter layer 12a are formed on the common insulating layer 16a. Therefore, the insulating layer formed with the second lead conductor 20 in the first embodiment is omitted, and one insulating layer is unnecessary. Therefore, the layer thickness of the common mode filter layer 12a can be reduced, so that the composite electronic component 200 is small in height, and its manufacturing step can be simplified.

10 is a schematic perspective view showing the layer structure of the composite electronic component 300 according to the third embodiment of the present invention.

As shown in FIG. 10, in the composite electronic component 300, the common mode filter layer 12a is provided in the lower layer, and the ESD protection layer 12b is provided in the upper layer. Since there is no change in the configuration of the common mode filter layer 12a and the configuration of the ESD protection layer 12b, the same components are designated with the same reference numerals and duplicated description thereof will be omitted. According to the third embodiment, the composite electronic component 300 has a small capacitance, a low discharge start voltage, and excellent discharge resistance, heat resistance and weather resistance in a manner similar to the low-voltage ESD protection elements of the first embodiment. Low-voltage ESD protection elements. Therefore, a composite electronic component that functions as a common mode filter including a high performance ESD protection function can be realized. Since the ESD protection layer 12b is provided on the top surface of the common mode filter layer 12a, the top surface of the common mode filter layer 12a to be the base surface needs to have sufficient flatness.

11 is a circuit diagram showing the configuration of a composite electronic component 400 according to a fourth embodiment of the present invention.

As shown in FIG. 11, inductor elements 14a and 14b functioning as common mode choke coils, and ESD protection elements 15a to 15d. One ends of the inductor elements 14a and 14b are connected to the first and second terminal electrodes 13a and 13b, respectively, and the other ends of the inductor elements 14a and 14b are respectively the third and fourth terminal electrodes 13c and 13b. 13d). One ends of the ESD protection elements 15a and 15b are connected to the first and second terminal electrodes 13a and 13b, respectively, and the other ends of the ESD protection elements 15a and 15b are respectively the fifth and sixth terminal electrodes ( 13e and 13f). Further, one ends of the ESD protection elements 15c and 15d are connected to the third and fourth terminal electrodes 13c and 13d, respectively, and the other ends of the ESD protection elements 15c and 15d are respectively the fifth and sixth terminals. It is connected to the electrodes 13e and 13f. As shown in FIG. 13, the composite electronic component 400 is mounted on a pair of signal lines. In the fourth embodiment, the pair of ESD protection elements are provided on both the input side and the output side as symmetrical circuits unlike the first embodiment. Therefore, even when the first and second terminal electrodes 13a and 13b are connected to the input side or the output side of the signal lines, the circuit configuration becomes the same.

12 is a schematic exploded perspective view showing an example of the layer structure of the composite electronic component 400.

As shown in FIG. 12, in the composite electronic component 400, there is a characteristic in the shape of the gap electrodes formed on the surface of the base insulating layer 27 in the ESD protection layer 12b. Composite electronic component 400 includes first and second gap electrodes 28 and 29 as well as third and fourth gap electrodes 36 and 37. The layer structure near the first gap electrode 28 is a portion that functions as the first ESD protection element 15a shown in FIG. 11, and the layer structure near the second gap electrode 29 is the second ESD protection element ( 15b) to function as. The layer structure near the third gap electrode 36 is a portion that functions as the third ESD protection element 15c, and the layer structure near the fourth gap electrode 37 functions as the fourth ESD protection element 15d. That's the part. One end of the first gap electrode 28 is connected to the first terminal electrode 13a, and the other end of the first gap electrode 28 is connected to the fifth terminal electrode 13e. One end of the second gap electrode 29 is connected to the second terminal electrode 13b, and the other end of the second gap electrode 29 is connected to the sixth terminal electrode 13f. One end of the third gap electrode 36 is connected to the third terminal electrode 13c, and the other end of the third gap electrode 36 is connected to the fifth terminal electrode 13e. One end of the fourth gap electrode 37 is connected to the fourth terminal electrode 13d, and the other end of the fourth gap electrode 37 is connected to the sixth terminal electrode 13f.

As described above, the composite electronic component 400 according to the fourth embodiment is a symmetrical circuit having a pair of ESD protection elements provided on both the input side and the output side. Thus, the composite electronic component 400 can be provided as a chip device without any limitation in the mounting direction.

While preferred embodiments of the invention have been described above, the invention is not so limited. Various changes may be made to the embodiments without departing from the scope of the invention, and such changes are, of course, included within the scope of the invention.

For example, in the above embodiments, the ESD protection layer 12b is provided on the lower layer and the common mode filter layer 12a is provided on the upper layer, but the ESD protection layer 12b is provided on the upper layer and the common mode filter layer 12a is provided. This may be provided in the lower layer. In this case, the ESD protection layer 12b is formed on the upper surface of the common mode filter layer 12a. Thus, the top surface of the common mode filter layer needs to have sufficient flatness.

In the above embodiments, a generally rectangular spiral conductor (angle pattern formed by a straight line) is used, but a generally circular spiral conductor (round pattern formed by a curve) may be used. When a round pattern is used, the gap electrodes can be easily formed in an open area where no pattern is formed.

1 is a schematic perspective view showing an external configuration of a composite electronic component according to a first embodiment of the present invention.

2 is a circuit diagram showing the configuration of the composite electronic component 100.

3 is a schematic exploded perspective view showing an example of the layer structure of the composite electronic component 100.

4 is a schematic plan view showing the positional relationship between the gap electrodes 28 and 29 and other conductor patterns.

5A is a schematic plan view showing an example of the layer structure near the first gap electrode 28 in the ESD protection layer 12b.

5B is a schematic cross-sectional view showing an example of the layer structure in the vicinity of the first gap electrode 28 in the ESD protection layer 12b.

6 is a schematic diagram illustrating the principle of an ESD protection element.

7 is a flowchart illustrating manufacturing steps of the composite electronic component.

8A is a schematic plan view showing another example of the layer structure in the vicinity of the first gap electrode 28 in the ESD protection layer 12b.

8B is a schematic cross-sectional view showing another example of the layer structure in the vicinity of the first gap electrode 28 in the ESD protection layer 12b.

9 is a schematic perspective view showing the layer structure of the composite electronic component 200 according to the second embodiment of the present invention.

10 is a schematic perspective view showing the layer structure of the composite electronic component 300 according to the third embodiment of the present invention.

11 is a circuit diagram showing the configuration of a composite electronic component 400 according to a fourth embodiment of the present invention.

12 is a schematic exploded perspective view showing an example of the layer structure of the composite electronic component 400.

13 is a circuit diagram of a general differential transmission circuit.

14 is a circuit diagram showing a conventional ESD countermeasure circuit.

* Description of the sign *

1, 2, 7: signal line

3: output buffer

4: input buffer

5: common mode choke coil

6: IC

8: coil

9: ESD protection parts

100, 200, 300, 400: composite electronic components

10a to 10d: first to fourth side surfaces

11a and 11b: first and second magnetic substrates

12: functional layer

12a: common mode filter layer

12b: ESD protection layer

13a to 13f: first to sixth terminal electrodes

14a, 14b: inductor elements

15a, 15b: first and second ESD protection elements

16a to 16e: insulation layer

16f: magnetic layer

16g: adhesive layer

17, 18: first and second spiral conductor

19, 20, 23, 24: first to fourth lead conductors

21, 22: first and second contact-hole conductors

25: opening

26: magnetic material

27: base insulation layer

28, 29, 36, 37: first to fourth gap electrodes

28a, 28b: electrode

28G, 29G: Gap

30, 34: ESD absorbing layer

32: insulating inorganic material

33: conductive inorganic material

Claims (19)

As a composite electronic component, An inductor element and an ESD protection element formed between two magnetic substrates, The inductor element includes insulating layers made of resin, and conductive patterns formed on the insulating layers, The ESD protection element comprises a base insulating layer, the pair of electrodes arranged through a gap formed between the electrodes on the base insulating layer as a pair of electrodes, and at least an ESD absorbing layer arranged between the electrodes. Include, And the ESD absorbing layer comprises a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulating inorganic material. The method of claim 1, The inductor element comprises first and second spiral conductors formed on a plane perpendicular to the stacking direction, Wherein the first helical conductor and the second helical conductor constitute a common mode filter and are magnetically coupled to each other. The method of claim 1, And the capacitance of the ESD protection device has a value of 0.35 kΩ or less. The method of claim 1, The resin is one of a polyimide resin and an epoxy resin, The insulating inorganic material is selected from the group of A1 ₂ O ₃ , TiO ₂ , SiO ₂ , ZnO, In ₂ O ₃ , NiO, CoO, SnO ₂ , V ₂ O ₅ , CuO, MgO, ZrO ₂ , AlN, BN and SiC At least one kind selected. The method of claim 1, The conductive inorganic material is at least one kind of metal selected from the group of C, Ni, Cu, Au, Ti, Cr, Ag, Pd and Pt or metal compounds of these metals. The method of claim 1, And the pair of electrodes are formed on a surface of one of the magnetic substrates through the base insulating layer. The method of claim 6, The inductor element comprises first and second spiral conductors formed on a plane perpendicular to the stacking direction, The first spiral conductor and the second spiral conductor constitute a common mode filter and are magnetically coupled to each other, And the gap provided between the pair of electrodes is arranged so as not to overlap the conductor pattern of the inductor element when viewed from the stacking direction. The method of claim 1, Wherein the gap provided between the pair of electrodes is arranged so as not to overlap the conductor patterns of the inductor element when viewed from the stacking direction. The method of claim 8, The inductor element comprises first and second spiral conductors formed on a plane perpendicular to the stacking direction, wherein the first spiral conductor and the second spiral conductor constitute a common mode filter and are magnetically coupled to each other. Composite electronic components. The method according to claim 8 or 9, And the pair of electrodes are formed on a surface of one of the magnetic substrates through the base insulating layer. As a composite electronic component, Having a common mode filter layer and an ESD protection layer provided between the two magnetic substrates, The common mode filter layer includes first and second insulating layers made of resin, a first spiral conductor formed on the first insulating layer, and a second spiral conductor formed on the second insulating layer, The ESD protection layer comprises a first ESD protection element connected to one end of the first spiral conductor, and a second ESD protection element connected to one end of the second spiral conductor, The first spiral conductor and the second spiral conductor are formed in a plane direction perpendicular to the stacking direction, and are arranged to magnetically couple with each other, Each of the first ESD protection element and the second ESD protection element is a pair of electrodes arranged through a gap formed between the electrodes on a base insulating layer, and at least between the electrodes. An arrayed ESD absorbing layer, And the ESD absorbing layer comprises a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulating inorganic material. The method of claim 11, A third ESD protection element connected to the other end of the first spiral conductor; And And a fourth ESD protection element connected to the other end of the second spiral conductor, And the third ESD protection element and the fourth ESD protection element have the same configuration as that of the first ESD protection element and the second ESD protection element. The method of claim 11, And the pair of electrodes are formed on one of the magnetic substrates through the base insulating layer. The method of claim 11, Wherein the gap provided between the pair of electrodes is arranged so as not to overlap the first helical conductor and the second helical conductor of the common mode filter layer when viewed in a stacking direction. The method of claim 12, And the pair of electrodes are formed on one of the magnetic substrates through the base insulating layer. As a connection structure of a pair of signal lines and a composite electronic component, The composite electronic component includes an inductor element and an ESD protection element formed between two magnetic substrates, The inductor element includes insulating layers made of resin, and conductive patterns formed on the insulating layers, The ESD protection element is arranged between a base insulating layer, the pair of electrodes arranged through a gap formed between the electrodes on the base insulating layer as a pair of electrodes, and at least between the pair of electrodes. An ESD absorbing layer, The ESD absorbing layer comprises a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in the matrix of the insulating inorganic material, The conductor patterns include first and second spiral conductors formed on a plane perpendicular to the stacking direction, The first spiral conductor and the second spiral conductor constitute a common mode filter and are magnetically coupled to each other, One end of the first helical conductor and one end of the second helical conductor are connected to an input side of the pair of signal lines. As a connection structure of a pair of signal lines and a composite electronic component, The composite electronic component includes a common mode filter layer and an ESD protection layer provided between two magnetic substrates, The common mode filter layer includes first and second insulating layers made of resin, a first spiral conductor formed on the first insulating layer, and a second spiral conductor formed on the second insulating layer, The ESD protection layer comprises a first ESD protection element connected to one end of the first spiral conductor, and a second ESD protection element connected to one end of the second spiral conductor, The first spiral conductor and the second spiral conductor are formed in a plane direction perpendicular to the stacking direction, and are arranged to magnetically couple with each other, Each of the first ESD protection element and the second ESD protection element is a pair of electrodes, the pair of electrodes arranged through a gap formed between the electrodes on a base insulating layer, and at least the pair of electrodes And an ESD absorbing layer arranged between them, The ESD absorbing layer comprises a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulating inorganic material, The one end of the first helical conductor and the one end of the second helical conductor are connected to an input side of the pair of signal lines. As a method of manufacturing a composite electronic component, Forming an ESD protection layer on a surface of the first magnetic substrate; Forming a common mode filter layer on a surface of the ESD protection layer; And Forming a second magnetic substrate on a surface of the common mode filter layer, The forming of the ESD protection layer may include forming a base insulating layer on the surface of the first magnetic substrate, the pair of electrodes being arranged through a gap formed between the electrodes on the surface of the base insulating layer. Forming the pair of electrodes, and forming an ESD absorbing layer arranged between at least the pair of electrodes, And the ESD absorbing layer comprises a composite material having an insulating inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulating inorganic material. The method of claim 18, The forming of the common mode filter layer may include alternately forming insulating layers and conductive patterns made of a resin, The insulating layers, the conductor patterns, the base insulating layer and the electrodes are formed by a thin film forming method.

Images