KR20100032819A - Apparatus for treating substrate including height contorlling means and method for contolling temperature distribution of substrate-plasing means using height contorlling means - Google Patents

Abstract

PURPOSE: A method for controlling a temperature distribution of a substrate laying unit and a substrate processing apparatus are provided to control interval between a heating unit and a substrate laying unit using a plurality of interval control units. The uniform temperature distribution of the substrate snuggly unit is secured. CONSTITUTION: A processing chamber(110) defines a reaction zone. A substrate snuggly unit(120) locates within a processing chamber. A heating unit(180) locates in the lower part of the substrate snuggly unit. A heating unit comprises coil. In the height of coil is the processing chamber outside, it is controlled with a plurality of interval control units(170). Therefore, the interval of coil and substrate snuggly unit is locally controlled.

Description

Apparatus for treating substrate including height contorlling means and method for contolling temperature distribution of substrate-plasing means using height contorlling means}

The present invention relates to a substrate processing apparatus comprising a substrate processing apparatus including a gap adjusting means for adjusting a gap between the substrate set means and the heat generating means outside the process chamber, and a method for adjusting the temperature distribution of the substrate set means using the gap adjusting means.

In general, in order to manufacture a semiconductor device, a display device, and a thin film solar cell, a thin film deposition process of depositing a thin film of a specific material on a substrate, a photo process of exposing or hiding selected areas of the thin films using a photosensitive material, The thin film is removed and patterned through an etching process. Among these processes, a thin film deposition process and an etching process are performed in an optimized substrate processing apparatus.

In order to ensure an optimum substrate processing process in the substrate processing apparatus, the substrate should be uniformly heated to a temperature suitable for the process conditions. In particular, in a semiconductor manufacturing process including selective epitaxial growth (SEG) in which a single crystal thin film is grown on a single crystal substrate, a uniform temperature distribution of the substrate is more important.

Hereinafter, a substrate processing apparatus according to the related art will be described with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a substrate processing apparatus according to the related art.

As shown in FIG. 1, the conventional substrate processing apparatus 5 includes a chamber 10 defining an enclosed reaction region R as an essential component, and a substrate 50, which is an object to be processed, is formed inside the chamber 10. The susceptor 20 to be seated, the gas distribution plate 40 through which the plurality of injection holes 35 are perforated up and down over the entire area so that the reaction gas is uniformly injected into the reaction region R, and the susceptor 20. Elevator assembly 45 for controlling the lifting movement of the).

The substrate processing apparatus 5 further includes a heat generating means 80 positioned below the susceptor 20 and operated in an induction heating manner. The heat generating means 80 may use a coil and heat the substrate 50 seated on the susceptor 20. The gas distribution plate 40 receives the reaction gas from the reaction gas supply path 60 installed through the chamber 10. In the reaction zone R, the reaction gas and the by-products used in the substrate processing process are exhausted through the exhaust port 65 installed in the lower portion of the chamber 10. The exhaust port 65 is provided with a pumping system (not shown) including a pump for smooth exhaust.

Referring to the thin film deposition process using the substrate processing apparatus 5 as shown in FIG.

When the substrate 50 to be processed is introduced into the chamber 10 by a robot (not shown), and the susceptor 20 is elevated by the operation of the elevator assembly 45, the upper portion of the susceptor 20 is provided. The substrate 50 is placed thereon. The heating unit 80 is operated to raise the temperature of the substrate 50 to a temperature required for substrate processing, and the reaction gas R is supplied to the reaction gas supplied from the reaction gas supply path 60 through the plurality of injection holes 35. Spraying to perform a substrate treatment process.

Before proceeding with the substrate processing process, a current is applied to the heat generating means 80 which is different depending on the substrate processing process but is located at the lower part of the susceptor 20 to maintain a temperature of about 450 to 1350 ° C. When the substrate 50 is heated to a uniform temperature over the central portion and the peripheral portion by the heat generating means 80, the deposition and etching process of the uniform thin film may be performed. The temperature distribution of the substrate 50 is a very important variable in the deposition and etching process of the thin film.

Before proceeding with the substrate treatment process, a test is performed to measure the temperature of a plurality of points of the substrate 50 to confirm a uniform temperature distribution of the substrate 50. The heating means 80 is in the form of a coil, and when the temperature of the measured point is higher than the average temperature, the height of the coil corresponding to the measured point is lowered, and when the temperature of the measured point is lower than the average temperature, The temperature distribution of the substrate 50 may be controlled by adjusting the distance between the susceptor 20 and the heating means 80 by increasing the height of the corresponding coil.

The tuning of the temperature distribution of the susceptor 20 in the substrate processing apparatus 5 of FIG. 1 is as follows.

First, a current is applied to the heat generating means 80 to raise the temperature to the substrate processing condition, and if the temperature distribution is uniform by testing the temperature distribution of the susceptor 20, the substrate processing process is performed. However, if the temperature distribution of the susceptor 20 is not uniform, the temperature is lowered, the chamber 10 is disassembled, and then the height of the coil at the portion corresponding to the susceptor 20 at a portion lower or higher than the average temperature. Adjust Returning to the first step again, a current is applied to the heating means 80 to increase the temperature of the substrate processing condition, and the process of testing the temperature distribution of the susceptor 20 is repeated.

In order to adjust the height of the coil-type heating means 80, the chamber 10 of Figure 1 must be repeatedly disassembled and assembled. Repeated disassembly and assembly of the chamber 10 of FIG. 1 causes problems with contamination inside the chamber 10. In other words, frequent opening / closing of the chamber 10 causes components inside the chamber 10 to be frequently exposed to the atmosphere so that foreign matter floating in the atmosphere is introduced into the chamber 10 and attached thereto, thereby causing the substrate processing process to occur. It may cause a defect. The rapid temperature change caused by frequent heating and cooling of the heat generating means 80 becomes a factor of shortening the life of the components constituting the chamber 10. In addition, frequent disassembly and assembly of the chamber 10 degrades the operability of the equipment.

The temperature distribution of the susceptor 20 heated by the heat generating means 80 tuned by the altitude adjustment of the coil ensures uniformity for a specific temperature only. In other words, even if the susceptor 20 ensures a uniform temperature distribution at 500 ° C. When the temperature raising condition of the susceptor 20 changes to 600 ° C. and 700 ° C., it is necessary to adjust the altitude of the coil to ensure a uniform temperature distribution of the susceptor 20. Therefore, when the temperature change condition of the susceptor 20 changes, it is necessary to disassemble the chamber 10 and retune the temperature distribution of the susceptor 20.

In order to solve the problems of the prior art as described above, the present invention is to control the distance between the substrate set means and the heating means in the outside of the process chamber in order to ensure a uniform temperature distribution of the substrate set means and to improve the operation efficiency of the equipment An object of the present invention is to provide a method for controlling the temperature distribution of a substrate settling means using a substrate processing apparatus and a gap adjusting means.

The substrate processing apparatus according to the present invention for achieving the above object comprises a process chamber defining a reaction zone; A substrate placement end located in the process chamber and having a substrate placed therein; Heat generating means located below the substrate mounting means and including a coil; And a plurality of gap adjusting means for controlling the height of the coil outside the process chamber to locally control the gap between the substrate setter and the coil.

In the substrate processing apparatus as described above, the plurality of gap adjusting means is connected to the coil through the process chamber.

In the substrate processing apparatus as described above, each of the plurality of gap adjusting means is a coil fixing support for fixing and supporting the coil; A shaft connected to the support for fixing the coil and penetrating the process chamber; A bellows installed outside the process chamber corresponding to the shaft; And a spacing adjuster connected to the shaft and installed below the bellows.

In the substrate processing apparatus as described above, an insulating material is interposed between the coil fixing support and the shaft.

In the substrate processing apparatus as described above, the coil fixing support is characterized in that connected to the fixing device for supporting the coil.

In the substrate processing apparatus as described above, the process chamber includes a through hole through which the shaft penetrates, and upper and lower support bars corresponding to upper and lower portions of the shaft respectively correspond to the through hole. It is characterized in that it is fastened respectively to the inside and the outside.

In the substrate processing apparatus as described above, the gap adjusting means is characterized in that it comprises a sensing device provided between the bellows and the gap adjuster.

In the substrate processing apparatus as described above, the drive motor is mounted to the altitude controller.

Method for controlling the temperature distribution of the substrate mounting means according to the present invention for achieving the above object is a process chamber defining a reaction zone; Substrate placing means positioned in the reaction space and having a substrate placed thereon; Heat generating means located below the substrate mounting means and including a coil; A substrate processing apparatus comprising: a plurality of gap adjusting means for adjusting a height of the coil to locally control a gap between the substrate placing means and the coil. A first step of raising the substrate setter at a temperature of and measuring the temperature of the substrate setter at a plurality of measurement points and separating the first and second regions higher or lower than the temperature of the substrate processing process; ; And adjusting the plurality of gap adjusting means corresponding to the first area to widen the gap between the substrate setter and the coil, and adjusting the plurality of gap adjusting means corresponding to the second area and the substrate setter. A second step of narrowing the gap between the coils; When the current is applied to the heat generating means, the substrate holding means is heated to the temperature of the substrate processing step, and the temperature of the substrate holding means is measured at the plurality of measuring points. And a third step of repeating the first and second steps when the first area and the second area are generated higher or lower than the temperature of the substrate processing process.

In the method of adjusting the temperature distribution of the substrate setter as described above, it is characterized in that for adjusting the plurality of gap adjusting means from the outside of the process chamber.

In the present invention, the substrate treating apparatus has the following effects.

By operating the altitude controller of the gap adjusting means located outside the process chamber, it is possible to locally adjust the distance between the substrate set means and the coil without disassembling the process chamber, thereby ensuring a uniform temperature distribution of the substrate set means. .

In particular, in order to proceed with various substrate processing processes, it is easy to secure a uniform temperature distribution of the substrate holding means for various temperature conditions required by the operation of the gap adjusting means without disassembling the process chamber in the substrate holding means requiring various tuning temperatures. can do.

Since a plurality of gap adjusting means are installed independently, when a defect or damage occurs in any one, only a specific gap adjusting means can be easily repaired and replaced.

When adjusting the distance between the substrate settling means and the coil, the disassembly process of the process chamber is omitted, thus eliminating the disassembly and assembly time of the substrate processing apparatus, thereby improving the operation efficiency of the equipment and the frequency of the inside of the process chamber being exposed to the atmosphere. This lowers the life of the process chamber.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention, FIG. 3 is a plan view of a heating means and a substrate placing means according to the present invention, and FIG. 4 is a sectional view of a heating means and a substrate placing means according to the present invention. FIG. 5 is a detailed view of A of FIG. 2, FIG. 6 is a perspective view of a gap adjusting means according to the present invention, FIG. 7 is a cross-sectional view taken along the line VV ′ of FIG. 6, and FIG. 9 is a perspective view of a coil fixing device according to the present invention, and FIG. 9 is a plan view of a heating means and a substrate placing means according to another embodiment of the present invention.

As shown in FIG. 2, the substrate treating apparatus 105 according to the present invention has a process chamber 110 that provides a sealed reaction region R, a substrate 150 that is disposed within the reaction region R, and is a processing object. The heating means 180, the substrate mounting means 120 and the coil 180a, including the substrate mounting means 120, which is located below the substrate mounting means 120, the coil 180a having a plurality of turns It comprises a plurality of gap adjusting means for adjusting the interval of the 170 and the gas distribution plate 140 for supplying the process gas in the reaction zone (R).

The substrate processing apparatus 105 further includes an elevator assembly 145 for controlling the lifting and rotating movement of the substrate setter 120 and an exhaust port 165 for exhausting the reaction gas and by-products generated during the substrate processing. do. The exhaust port 165 may be provided with a pumping system (not shown) including a pump for smooth exhaust. The gas distribution plate 140 receives the process gas from the gas supply pipe 160 installed through the process chamber 110. The gas distribution plate 140 is formed with a plurality of injection holes 118 perforated up and down over the entire area.

As shown in FIG. 3, the heating means 180 is an end point adjacent to the periphery of the substrate mounting means 120 at a time point 184a adjacent to the support shaft 182 supporting the substrate mounting means 120. A coil 180a having a plurality of turns between 184b and a power source (not shown) for applying an alternating current to the coil 180a are included. The substrate mounting means 120 is indirectly heated by a magnetic field generated when a current is applied to the coil 180a, and finally the substrate 150 is heated up via the substrate mounting means 120.

As shown in FIG. 4, the uniformity of the temperature distribution in the substrate setter 120 may include the first spacing T1 between the plurality of turns of the coil 180a and the first set of coils 180a and the substrate setter 120. Directly affected by two intervals T2. When the first and second intervals T1 and T2 are maintained at equal intervals, respectively, due to the heat loss in the periphery of the substrate placing means 120 where the substrate 150 shown in FIG. 2 is not placed, the substrate placing means 120 ) Center shows higher temperature than the periphery. Therefore, in order to compensate for the non-uniformity of the temperature distribution, the first interval T1 between the plurality of turns in the coil 180a and the second interval T2 between the substrate setter 120 and the coil 180a are It is arranged so as to narrow in the direction of the peripheral portion from the center of the substrate mounting means 120. Therefore, the heat generating means 180 is arranged in the form of a spiral coil. The heat generating means 180 is installed spaced apart by about 5 to 50mm from the lower portion of the substrate mounting means 120. The distance between the substrate setter 120 and the heat generating means 180 is not particularly limited to 5 to 50 mm and may be set to 5 mm or less or 50 mm or more.

As shown in FIG. 2, in order to measure the temperature of the substrate placing means 120 heated by the heat generating means 180 and to ensure a uniform temperature distribution, a second interval between the substrate placing means 120 and the coil 180a is provided. In order to locally adjust T2, a plurality of gap adjusting means 170 may be installed. As shown in FIG. 3, the plurality of gap adjusting means 170 includes first, second, third, and fourth regions P1, P2, and P3 where a vertical line and a horizontal line passing through the center of the substrate mounting means 120 meet the coil. , P4). Each of the first to fourth regions P1, P2, P3, and P4 includes a plurality of points 186 on which a plurality of gap adjusting means 170 are installed.

The second interval T2 between the substrate setter 120 and the coil 180a may be locally controlled by a plurality of gap adjusting means 170 connected to the coils 180a corresponding to the plurality of points 186. The plurality of gap adjusting means 170 is driven independently. If necessary, as shown in FIG. 9, the gap adjusting means 170 of FIG. 2 may be additionally installed in the coil 180a which is prolonged between the plurality of points 186 adjacent to the peripheral portion of the substrate setter 120. . 9, between the vertical line and the horizontal line, along with the first, second, third, and fourth regions P1, P2, P3, and P4 where the coil and the vertical line passing through the center of the substrate mounting means 120 meet. The gap adjusting means 170 may be further installed in the fifth, sixth, seventh, and eighth regions P5, P6, P7, and P8, which meet two diagonal lines passing through the center of the substrate mounting means 120. have. Each of the fifth, sixth, seventh, and eighth regions P5, P6, P7, and P8 has a smaller number than each of the first, second, third, and fourth regions P1, P2, P3, and P4. Includes a number of points 186.

The plurality of points 186 in which the plurality of gap adjusting means 170 shown in FIGS. 3 and 9 are installed is merely an example, and may be installed in various forms in a portion corresponding to the coil 180a having a plurality of turns. have.

As shown in FIG. 5, a through hole TH is installed on a bottom surface of the process chamber 110, and each of the plurality of gap adjusting means 170 passes through a plurality of through holes TH, thereby allowing a plurality of points 186 of FIG. 3. ) Are installed in the lower portion of the coil (180a) corresponding to each.

5 to 7, the gap adjusting means 170, the coil fixing support 172 for fixing and supporting the coil 180a of Figure 3, the insulating material 173 connected to the lower portion of the coil fixing support 172. ), The shaft 171 connected to the lower portion of the insulating material 173, the upper strut 174, corresponding to the upper portion of the shaft 171 and fixed inside the process chamber 110, and the lower portion of the shaft 171 And a lower pedestal 175 fixed to the outside of the process chamber 110, a bellows 176 positioned below the lower pedestal 175, and a shaft that passes through the bellows 176 and is located below the bellows 176. It is configured to include a spacer 178 connected to 171.

As shown in FIG. 8, the support for fixing the coil 172 is connected to the fixing device 190 supporting the coil 180a. The fixing device 190 includes a support part 190a which surrounds and supports the coil 180a and two alignment parts 190c extending from the lower part of the support part 190a and having a connection hole 190b. The coil fixing support 172 of FIG. 6 includes two alignment planes 172a corresponding to the two alignment parts 190a of FIG. 8 and fixing holes 172b penetrating through the two alignment planes 172a, respectively. do. As shown in FIG. 8, when the two alignment portions 190a of the fixing device 190 supporting the coil 180a are aligned with the two alignment planes 172a of the coil fixing support 172, the bolt 192 is The fixing hole 172b and the connection hole 190b are penetrated and the end of the bolt 192 is fastened by a nut 194 to be fixed.

6 and 7, since the coil fixing support 172 and the shaft 171 are formed of a metal material, the insulating material 173 interposed between the coil fixing support 172 and the shaft 171 may be formed. It serves to block the flow of current between the coil fixing support 172 and the spacer 178. As the insulating material 173, a ceramic or quartz containing AlO, AlN, BN, and SiC can be used. The upper strut 174 and the lower strut 175 are coupled to the inside and the outside of the process chamber 110 corresponding to the through hole TH of FIG. 5, respectively, and are formed in the shaft 171 through the through hole TH. Provide a path for lifting and lowering.

The lower strut 175 corresponding to the through hole TH of FIG. 5 is connected to the bellows 176. The bellows 176 penetrates the process chamber 110 and functions to seal the inside of the process chamber 110 with the outside when the shaft 171 moves up and down. The lower part of the bellows 176 is connected to the shaft 171 and the altitude regulator 178 for adjusting the altitude of the support for fixing the coil 172 is installed. The gap controller 178 is installed outside the process chamber 110, so that the gap between the substrate setter 120 and the coil 180a can be locally adjusted without disassembling the process chamber 110. The spacer 178 may be operated by a drive motor (not shown).

The gap adjusting means 170 may further include a sensing device (not shown) between the bellows 176 and the gap adjuster 178, and the sensing device may include a sensor installed between the bellows 176 and the altitude controller 178. It is mounted on the support 177. The sensing device functions to detect the height of the coil 180a corresponding to the plurality of points 186 of FIG. 3. As a sensing device, a sensor or gauge can be used.

The substrate processing apparatus 105 of the present invention operates the gap adjuster 178 of the gap adjusting means 170 located outside the process chamber 110, so that the substrate dimension stage 120 is not dismantled without disassembling the process chamber 110. The distance between the coil 180a and the coil 180a may be adjusted. This feature is characterized in that, in order to proceed with various substrate processing processes, the substrate setter 120 may be operated by operating the gap adjusting means 170 without disassembling the process chamber 110 in the substrate setter 120 requiring various tuning temperatures. Uniformity of temperature distribution can be easily ensured. In addition, since a plurality of interval adjusting means 170 is installed independently, if any defect or damage occurs in any one, there is an advantage that can easily repair and replace only a specific interval adjusting means 170.

Referring to Figures 2 to 9, the method for adjusting the temperature distribution of the substrate mounting means 120 is as follows.

In a first step, a current is applied to the heat generating means 180 to raise the temperature of the substrate placing means 120 to a temperature necessary for the substrate processing process, and the temperature of the substrate placing means 120 at a plurality of measurement points (not shown). Is measured, and the first area and the second area which are higher or lower than the temperature required for the substrate processing process are distinguished.

In a second step, the gap adjusting means 170 corresponding to the first area is adjusted to widen the gap between the substrate setter 120 and the coil 180a, and the gap adjusting means 170 corresponding to the second area is increased. By adjusting, the gap between the substrate setter 120 and the coil 180a is narrowed.

In a third step, by applying a current to the heat generating means 180 to raise the substrate holding means 120 to the temperature required for the substrate processing process and to measure the temperature of the substrate holding means 120 at a plurality of measurement points, When the temperature distribution is secured, the substrate processing process is performed. When the first and second regions, which are higher or lower than the temperature required for the substrate processing process, are generated, the first and second steps are repeated.

1 is a cross-sectional view schematically showing a substrate processing apparatus according to the prior art

2 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention.

3 is a plan view of the heat generating means and the substrate placing means according to the present invention

4 is a cross-sectional view of the heat generating means and the substrate placing means according to the invention

5 is a detailed view of A of FIG.

Figure 6 is a perspective view of the gap adjusting means according to the present invention

FIG. 7 is a cross-sectional view taken along the line VV ′ of FIG. 6.

8 is a perspective view of a coil fixing device according to the present invention;

9 is a plan view of the heat generating means and the substrate mounting means according to another embodiment of the present invention

* Explanation of symbols for the main parts of the drawings *

170: gap adjusting means 171: shaft

172: support for fixing the coil 173: insulating material

174, 175: upper and lower holding surface 176: bellows

177: sensor support 178: spacer

Claims (10)

A process chamber defining a reaction zone; Substrate holding means located in the process chamber and having a substrate placed therein; Heat generating means located below the substrate mounting means and including a coil; A plurality of gap adjusting means for controlling a height of the coil outside the process chamber to locally control a gap between the substrate setter and the coil; And Substrate processing apparatus comprising a. The method of claim 1, And the plurality of gap adjusting means are connected to the coil through the process chamber. The method of claim 1, Each of the plurality of gap adjusting means, A coil fixing support for fixing and supporting the coil; A shaft connected to the support for fixing the coil and penetrating the process chamber; A bellows installed outside the process chamber corresponding to the shaft; A spacer connected to the shaft and installed at a lower portion of the bellows; Substrate processing apparatus comprising a. The method of claim 3, wherein Substrate processing apparatus, characterized in that the insulating material is interposed between the coil fixing support and the shaft. The method of claim 3, wherein The coil fixing support is substrate processing apparatus, characterized in that connected to the fixing device for supporting the coil. The method of claim 3, wherein The process chamber includes a through-hole through which the shaft passes, and upper and lower supporters respectively corresponding to the upper and lower portions of the shaft are fastened to the inside and the outside of the process chamber corresponding to the through-hole, respectively. Substrate processing apparatus to be. The method of claim 3, wherein And the gap adjusting means includes a sensing device provided between the bellows and the gap adjuster. The method of claim 3, wherein And a driving motor mounted to the altitude controller. A process chamber defining a reaction zone; Substrate placing means positioned in the reaction space and having a substrate placed thereon; Heat generating means located below the substrate mounting means and including a coil; In the substrate processing apparatus comprising; a plurality of gap adjusting means for adjusting the height of the coil to locally control the gap between the substrate setter and the coil, A current is applied to the heat generating means, the temperature of the substrate holding means is raised to a temperature of the substrate processing step, and then the temperature of the substrate holding means is measured at a plurality of measuring points, and A first step of dividing the first region and the second region; Adjusting the plurality of gap adjusting means corresponding to the first area to widen the gap between the substrate set means and the coil, and adjust the plurality of gap adjusting means corresponding to the second area to the substrate set means A second step of narrowing the gap between the coil and the coil; When the current is applied to the heat generating means, the substrate holding means is heated to the temperature of the substrate processing step, and the temperature of the substrate holding means is measured at the plurality of measuring points. A third step of repeating the first and second steps when the first area and the second area are generated higher or lower than the temperature of the substrate processing process; Method for adjusting the temperature distribution of the substrate mounting means comprising a. The method of claim 9, The method of controlling the temperature distribution of the substrate set means, characterized in that for adjusting the plurality of gap adjusting means outside the process chamber.

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