KR101056363B1 - Heat treatment apparatus of semiconductor substrate and its method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to methods for manufacturing heat treatment materials and to improvements in manufacturing apparatuses, and more particularly, to an epitaxial processing apparatus for a substrate and a method for heat treating electronic wafers and semiconductor wafers thereof. That is, an inner chamber composed of an upper chamber, which is a hot wall, and a susceptor spaced apart in the lower direction of the upper chamber and formed in the center of the reactor to support the substrate, for supplying electromagnetic energy to the reactor to heat the substrate. An inductor is provided, and the upper chamber and the susceptor are heated to an appropriate temperature through the inductor, and the upper chamber and the susceptor spacing are adjusted for each process to uniformly provide the temperature of the substrate. Accordingly, it is possible to reduce heat loss inside the reactor and to solve problems such as slippage caused by non-uniform temperature distribution of the substrate, warpage and bow of the substrate, and contamination of the back surface of the substrate according to the conditions of the susceptor. Will be.

Heat treatment, equipment, substrate, reactor, deposition

Description

Heat treatment apparatus for semiconductor substrate and method thereof {Methods and apparatus for epitaxial processing wafers}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvements in methods and manufacturing apparatuses for heat treating workpiece materials, and more particularly, to an apparatus for manufacturing electronic devices and a method for heat treating semiconductor wafers thereof.

Semiconductor device manufacturing processes require uniform heat treatment of the substrate at high temperatures. Examples of such processes include chemical vapor deposition, silicon epitaxial growth, etc., in which a layer of material is deposited from a gaseous phase onto a semiconductor substrate placed in a susceptor in a reactor, where susceptors are subjected to resistive heating, high frequency heating, and infrared heating. Thereby heating to a high temperature, generally in the range of 400 ° C. to 1250 ° C., where gas passes through the reactor and a chemical reaction occurs in close proximity to the substrate surface in a gaseous state. This reaction causes the desired product to be deposited on the substrate.

There are numerous standard textbooks and references that describe semiconductor fabrication and heat treatment of substrates. Some example reference books include Sorab K. Ghandhi, “VLSI Fabrication Principles”, Wiley Interscience, 1883 John L. Vossen and Werner Kern, “Thin Film Processes”, Academic Press, Orlando, 1978; S.M. Sze, "VLSI Technology", McGraw-Hill, New York, 1988.

Meanwhile, the semiconductor manufacturing apparatus includes a cold wall reactor and a hot wall reactor.

Among them, the advantage of the hot wall reactor is that the temperature in the substrate can be uniformly heated, and the deposit deposited on the reactor wall can be easily cleaned by using a gas reaction in-situ. . However, these hot wall reactors take a long time because they have to ramp up and cool down the entire chamber temperature.

Thus, in recent years, cold wall reactors are mainly used. The cold wall reactor proceeds by intensively heating the susceptor loaded with the substrate. This makes it easy to raise and lower the temperature. However, as the substrate size is increased in size, the temperature uniformity in the substrate during heat processing is further required, and problems such as slip, bowing, and warpage of the substrate due to the temperature gradient become serious. This is because the substrate is heated by the susceptor, so that a temperature difference occurs in a region opposite to the region where the substrate touches the susceptor.

In particular, the uniformity of the substrate temperature is very important among the main variables that determine the characteristics such as the thickness, concentration, and crystalline form of the silicon epitaxy layer during the semiconductor device manufacturing process.

The nonuniformity of the substrate temperature causes a plastic deformation called slip. This slip occurs along any crystal direction across any crystal plane in the crystal, causing some of the material to displace relative to the rest. Common causes of slip in crystals may be due to temperature gradients during film growth, or may be the result of the manner in which the substrate is supported, the mechanism by which the substrate is heated, or the rate of temperature change of the epitaxial process. Crystal defects such as slip are often found at the edges of the substrate and appear as short lines.

Temperature gradients in the substrate can be caused by non-uniformity of the thermal environment inside the CVD reactor. As such, the heating method and heat transfer mechanism of the substrate, that is, the heat conduction, convection, and radiation methods, vary depending on the shape inside the CVD reactor.

The features and problems of the commercialized silicon epitaxial growth device to date are as follows.

The Furnace type reactor of the conventional apparatus heats the substrate by heat dissipation of the hot wall. In this reactor apparatus, the distance of the heat dissipation source is not constant according to the position of the substrate, and the edge of the substrate is shorter than the center of the substrate and is hot. Is deposited. It is also loaded into a quartz or SiC boat slot for holding the substrates.

Areas around the slots cause temperature non-uniformity problems during processing. The substrates are also clamped by the slots, causing crystal defect problems with localized stresses. And such reactors have the disadvantage of requiring a long heating and cooling time to load and unload the substrates.

 In addition, the Barrel Type Coldz reactor has a radiant heat heating method for heating a susceptor using an infrared lamp or an induction heating method using a coil. The reactor has a uniform gas supply limitation, which causes the thickness variation of the deposited film and the heat loss due to the cold wall, causing the substrate to slip and process problems.

 Another type of reactor may be a pancake type for uniform temperature and gas supply within the substrate. The reactor loads the substrate 110 on the susceptor 111 and rotates it while heating the susceptor 111, and the injection nozzle of the reaction gas is injected from the center of the susceptor 111 to susceptor 111. Exhaust to the edge.

1 is a view of a substrate in a high temperature process by the induction heating method using a commercially available high frequency. In such a reactor, the susceptor 111 is heated by the induction coil 105, and since the substrate 110 is directly contacted with the heated susceptor to transfer heat, the substrate of FIG. Bent like 110). When the substrate is bent in this way, a temperature gradient in the substrate is generated due to the difference in susceptor thermal conductivity at the center and the edge of the substrate, and slip occurs.

In addition, when heat of the susceptor is transferred to the substrate, contaminant particles, silicon, etc. are moved to the substrate according to the state of the susceptor, resulting in polysilicon deposition 121 and deformation, which is the back contamination of the substrate as in the substrate of FIG. 2. do. In addition, since the reaction gas injection nozzle is injected from the center of the susceptor and exhausted to the edge of the susceptor, when the temperature of the susceptor rises, gas flow and convection occur from the center of the susceptor to the edge, causing a sudden rise in temperature of the susceptor edge. . The susceptor's temperature gradient causes stress on the substrate, causing a slip problem. In addition, the temperature distribution of the wafer becomes uneven due to heat loss caused by the cold wall of the substrate close to the cold wall. To compensate for this, the RF coil is more closely spaced at the edge of the susceptor. However, this approach causes the temperature profile not to be optimal for heating ramp-up and cooling down, etc., and leads to overheating of the edges in the epilayer deposition step. To reduce this problem, lowering the rate of temperature rise takes a long time, so throughput is a problem.

3 is a view of a substrate in a susceptor heating method by an infrared lamp. This infrared heating method allows the loading / unloading times of the substrate to be faster, and a heat source of the infrared lamp 127 passes through the reactor wall 107 to radiate heat the substrate 110 and the susceptor 111. to be. The substrate to be treated is placed on the susceptor, and because of the high thermal conductivity of the susceptor, it can conduct heat laterally, keeping the temperature of the substrate uniform. This susceptor is typically wider than the substrate and allows the susceptor to compensate for radiant heat losses at the edge of the substrate.

However, such a manufacturing apparatus is suitable for a device for depositing a thin layer (Thin Epitaxial Layer), but when depositing a thick layer (Thick Epitaxial Layer) there are a lot of problems in the process and costly to use consumables. In this case, the quartz chamber not only absorbs some of the energy from the lamps, but also absorbs radiant heat from the substrate and the acceptor. Therefore, in the case of depositing a thick layer, unwanted deposits are coated 126 on the quartz chamber wall. These deposits interfere with the transfer of radiant energy to the substrate, and the unwanted deposits peel off due to the difference in coefficient of expansion and the flakes fall on the substrate, causing contaminants.

Such deposits 126 include films having etching characteristics that are inconsistent or incompatible with etching characteristics with polysilicon deposited on the susceptor. Inconsistent or incompatible etching characteristics make cleaning the reactor chamber more difficult, which can be a particularly serious problem in in situ cleaning processes.

In addition, the reactor wall is a cold wall and a temperature gradient occurs at the substrate edge. This can cause processing problems such as crystal defects, non-uniformity of dopant concentration. These reactor components, ie reflectors 132 and lamp filaments 127, also degrade in time and use, causing unwanted substrate temperature variations. In addition, radiant heating systems suffer from the problem of requiring many lamps and a large amount of power (up to 300 kW) to heat one substrate.

An object of the present invention for solving the conventional problems as described above, the crystal defect (Slip) caused by the non-uniform temperature distribution of the substrate caused in the heat treatment process of the workpiece, such as the substrate of the semiconductor, warpage, bow), contaminants on the back of the substrate according to the condition of the susceptor, deposits on the wall of the reactor are peeled off, and flakes contaminate the substrate and the reactor. To provide an apparatus capable of lengthening, and to provide a semiconductor substrate heat treatment apparatus and a heat treatment method capable of achieving an improved throughput.

The configuration of the present invention for solving the above-mentioned conventional problems and to achieve the object according to the present invention, in the heat treatment apparatus of the semiconductor substrate, spaced apart in the upper chamber and the lower direction of the upper chamber which is a hot wall reactor to support the substrate An inner chamber composed of a susceptor formed in the center thereof; An inductor for supplying electromagnetic energy inside the reactor to heat the substrate; A gas source supplying gas into the reactor for depositing the desired film on the substrate; Purge gas (H ₂ Gas Purge) supplied to form an atmosphere inside the reactor; A substrate handling device for loading / unloading a substrate; And a lifting device for mediating the up and down movement of the susceptor according to each section of the process.

In this case, the inductor is composed of an electromagnetic induction coil, characterized in that installed on the upper upper wall and the susceptor of the inner chamber.

In addition, in order to control the uniform temperature of the substrate is characterized in that the controller is further configured to be connected to the upper chamber, the susceptor and the induction coil to control the substrate temperature.

In this case, the controller may increase the susceptor temperature gradually while increasing the temperature of the upper chamber 108-1 so as to uniformly form the upper and lower temperatures of the substrate.

In addition, the controller, the operation of the vertical motion of the elevating device can be controlled by the process so that the susceptor temperature is not higher than the substrate temperature, the controller is a susceptor height adjuster, wafer lifter, reactor door, wafer carrier And mechanically connected.

In addition, the induction coil is composed of a square or circular RF coil assembly plate, a plurality of RE coils assembled in a radial form on the assembly plate and coil studs are installed on the RF coil at regular intervals along the coil length. It features.

Here, the refrigerant of purity is circulated through the RF coil in order to prevent overheating of the induction coil.

The height of the coil stud is adjusted to maintain the temperature uniformity of the substrate.

The controller connected to the susceptor elevating device may be configured to instruct the elevating device to lower the susceptor to cool the chamber after completion of the work.

In addition, the controller is characterized in that to perform the load / unload command to the substrate susceptor temperature decreases.

In addition, the upper chamber and the susceptor are silicon carbide coated graphite, characterized in that the thickness is configured in the range of 0.5 to 1.5 inches.

In addition, it characterized in that it further comprises a rotating member for rotating the susceptor.

Here, the susceptor height adjustment connector constituting the rotating member to adjust the height of the susceptor, to maintain the temperature of the substrate, to provide a rotational force to the susceptor, the susceptor lifting plate to raise / lower the susceptor It is driven up and down by the linear actuator and the rotary motion is characterized in that it is transmitted to the linear actuator through a rotary feed-through from the motor.

And, the alignment of the susceptor lifting plate is maintained using a lifting guide bearing, the vertical movement by the susceptor lifting plate is made by the susceptor is raised (D1) or lowered (D2) according to the process step by the mounting tower It is characterized by.

In addition, a gas nozzle and a control valve are installed for each region to control the flow rate of the reactive gas injection for each susceptor region, and a dopant gas flow control valve is installed for each susceptor region and supplied from the reactor side. do.

In this case, the dopant gas may independently adjust the dopant gas concentration of the susceptor center 130 and the dopant gas concentration injection amount of the susceptor edge 131 to provide the optimum dopant concentration uniformity of the deposition layer. Characterized in that.

In addition, the housing, the body, and the lid are detachably configured to protect the areas of the outer chamber surrounding the upper chamber, form a sealing, and the sealing is electrically insulated between the lid and the housing of the reactor. It is characterized by consisting of a seal.

The housing, the main body, and the lid may be formed of any one of ceramic, aluminum alloy, and stainless steel, and cooling water may be circulated through a cooling water pipe to cool the inner chamber wall. It is characterized by measuring the temperature of the temperature using a temperature sensor and feedback by controlling the flow rate of the fluid on the control valve.

On the other hand, a method for solving the above-mentioned conventional problems and to achieve the object according to the present invention, the method of processing a semiconductor substrate, comprising: a step of rotating the susceptor to position adjacent to the upper chamber; B inductively coupling energy from an inductor to the susceptor to heat the upper chamber; C) inductively coupling energy from an inductor to the susceptor to heat the susceptor: d, injecting a reaction gas into the reactor; Depositing a material layer on the substrate; F lowering a susceptor to separate from the upper chamber for cooling the substrate after the deposition process; G for cooling the substrate and susceptor; The deposited substrate is broken, h step of loading a new substrate on the susceptor; characterized in that it comprises a.

In this case, the separation distance between the upper chamber and the susceptor is characterized in that it is maintained larger in the chamber cooling section than in the reaction step.

In addition, the step of adjusting the separation distance between the upper chamber and the susceptor characterized in that it further comprises before performing any one of the steps a to g.

As described above, during the process by the semiconductor substrate heat treatment apparatus and method according to the present invention, by configuring the inner chamber of the reactor as a hot wall reactor it is possible to heat the substrate in a uniform and efficient convection without heat loss by the wall.

In addition, since the temperature of the upper and lower chambers can be heated independently, the temperature difference between the substrate temperature and the susceptor is reduced. By controlling the radiant source of the upper chamber heating, it is possible to reduce the stress of the substrate by heating the same without the temperature gradient of the front and back of the substrate, and remove the susceptor temperature and the temperature difference of the substrate to move the silicon from the susceptor and the substrate Can be reduced.

In addition, by uniform temperature distribution of the substrate, rotation of the susceptor, and control of the flow rate of the reaction gas injection for each susceptor region, the deposition thickness and the uniformity of the substrate can be improved. If the distance from the top of the chamber becomes a cold wall (Cold wall) reactor to be able to cool the temperature of the substrate quickly.

In addition, since deposits such as silicon deposited on the thermal walls are easily removed by a cleaning process using a halogen structure by using a poly structure, it is possible to reduce contamination of the reactor and improve throughput.

Hereinafter, a semiconductor substrate heat treatment apparatus and a heat treatment method according to the present invention will be described in detail with reference to the accompanying drawings.

4 is a conceptual diagram showing the configuration of the epitaxial growth apparatus, FIG. 5 is a plan view of the upper chamber coil, FIG. 6 is a plan view of the susceptor coil, FIG. 7 is a conceptual diagram of the control of the epitaxial growth apparatus, and FIG. 8 is a configuration of the epitaxial growth apparatus. 9 is a schematic diagram illustrating a reactor internal chamber, and FIG. 10 is a wafer loading and unloading step diagram of the epitaxial growth apparatus.

 (Example 1)

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. The invention is not intended to be limited to the disclosed embodiments, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

4 is a cross-sectional view of a CVD reactor according to Embodiment 1 of the present invention. The reactor can maintain substrate temperature uniformity even at high temperatures and is suitable for epitaxial deposition of silicon with low contamination.

First, referring to FIG. 4, the outer chamber 107 of the device is made of quartz or porcelain which is very suitable for contact with the reaction gas. In addition, the outer side of the outer chamber 107 to protect the area 133, the main body 109, the lid 134 and the like is detachably configured, which is configured to form a sealing (Sealing). This sealing consists of a seal 135 which is electrically insulated between the lid 134 of the reactor and the housing 133.

The constituent materials of the housing 133, the main body 109, and the lid 134 are made of iron alloy such as ceramic, aluminum alloy, and stainless steel, and cooling water is supplied to the cooling water pipe 102 to cool the chamber wall. Circulated to In this case, it is preferable that the temperature of the chamber wall is controlled and fed back so that the flow rate of the fluid acts on the regulating valve.

An advantage of this cooling wall configuration is that it can reduce the amount of process gas that may escape from the inner chambers 108, 111 can deposit on the outer chamber 107. Cooling may be maintained between the outer chamber 107 and the body 109 through the design of the contacts to enable heat transfer. Examples of materials suitable for this outer chamber 107 include materials suitable for liquid cleaning, gas cleaning and physical cleaning treatments to remove surface deposits with quartz and porcelain.

In addition, as shown in FIG. 9B, the inner chamber 108 that performs gas reaction on the substrate 110 for epitaxial growth is composed of a flat cylindrical upper chamber 108-1 and susceptor 111. The materials are comprised of silicon carbide, silicon carbide coated graphite.

In this case, the upper chamber 108-1 and the susceptor 111 are heated by two inductors RF coil 105, respectively, and a refrigerant of purity is circulated through the RF coil to prevent overheating of the induction coil 105. do. The upper chamber 108-1 is fixed by the inner chamber support 128, and the RF coil assembly plate 103 is supported by the assembly plate support 101.

In addition, the susceptor holder 112 is attached to the center of the susceptor 111 to rotate the susceptor 111, and the susceptor support 114 allows the housing 133 to adjust the height of the susceptor 111. It is preferable to configure so as to extend through the bottom surface.

5 is a coil model diagram of the upper chamber 108-1. The RF coil 105 is supported on the RF coil assembly plate 103 by a particular stud 117, and the height and spacing of the coil 105 can be adjusted by positioning the stud 117 at periodic intervals along the length of the coil. Do. The susceptor 111 supports the substrate 110 in the inner chamber 108 region, and rotates while maintaining the isothermal processing temperature of the substrate 110 during the main process.

6 is a coil model diagram of the susceptor 111. The RF coil 105 is also supported by the RF coil assembly plate 103 by a particular stud 117, the coil height and spacing is adjustable by the stud 117 is positioned at periodic intervals along the length of the coil. The stud height indicates the spacing between the RF coil segment 105 and the inner chambers 108, 111.

The temperature uniformity of the inner chambers 108 and 111 maintains the temperature uniformity with the appropriate gap change D1 between the upper chamber 108-1 and the susceptor 111 and the thickness of the silicon carbide coated graphite of the inner chamber 108. Can be. Therefore, the substrate 110 is maintained at substantially the isothermal processing temperature during the process step.

The dopant gas is very sensitive to changes in substrate 110 temperature, providing an excellent means of fine tuning the height of the coil for optimum temperature uniformity. Therefore, the temperature uniformity is improved by changing the separation distance between the inner chambers 108 and 111 and the inductor 105. The final coil profile is obtained by measuring the uniformity of the epitaxial film resistivity and adjusting the resistivity within the entire wafer to achieve uniformity.

The upper chamber 108-1 and the susceptor 111, which are internal chambers, are separated from the RF induction coil 105 by a coil cover 104. It is injected through the hydrogen supply nozzle 116 to maintain the pressure in the reactor and to inhibit the reaction gas from entering the bottom of the susceptor. The main reaction gas is introduced through the gas nozzle assembly 124 configured on the side of the reactor chamber. Such a main reaction gas may include a reaction gas, a deposition gas, a carrier gas, an inert gas, a dopant gas, and various other types of gases.

7 is a control conceptual diagram of the epitaxial growth apparatus. The temperature control system controls the power delivered to the RF power control connectors 139 and 140. In this case, the one or more temperature sensors are connected to the susceptor outer temperature sensor connector 137 and the inner temperature sensor connector 138 so that the upper chamber 108-1, the susceptor 111, and the substrate 110 are connected. Deriving one or more temperature information, in the present apparatus, power control of the upper chamber 108-1 prevents a temperature gradient from occurring on the front and rear surfaces of the substrate 110 while radiating toward the susceptor 111.

The controller also regulates the flow of refrigerant through the coil. The embodiment includes a plurality of temperature sensors 106 arranged to derive temperature information for the temperature control system. Some examples of temperature sensors are thermocouples, pyrometers, and radiation thermometers.

The gas control connector 142 is connected to a main gas line to inject a reaction gas and to adjust a gas flow rate.

The susceptor 111 height adjusting connector 141 may be used to adjust the height of the susceptor 111 and provide rotation to the susceptor 111 in order to maintain an appropriate temperature of the substrate.

In addition, the gas exhaust connector 143 may be adjusted to maintain exhaust gas discharge in the reactor and proper reactor pressure.

In the substrate 110 loaded on the susceptor 111 of the embodiment, silicon is deposited at the first position D1, and when the deposition is completed, the susceptor 111 moves to the second position D2, and the chamber 108 and susceptor 111 lower the temperature, and a substrate handling device (not shown) provides substrate loading / loading.

8 is a cross-sectional view of a device for susceptor 111 rotation and vertical movement.

The reactor in this case is a temperature dropping step for loading / bending the substrate. That is, the susceptor lifting plate 148 is driven up and down by the linear actuator 149 to raise / lower the susceptor 111. This rotational motion is transmitted from the motor 152 to the linear actuator 149 via the rotary feedthrough 150. The alignment of the susceptor lifting plate 148 is maintained using the lifting guide bearing 153, and the vertical movement of the susceptor lifting plate 148 is performed by the mounting tower 147. Depending on the stage, it will rise (D1) or fall (D2).

The corrugated box 151 is completely sealed to the mounting plate 147 in the housing 133 and surrounds the susceptor support 114. In addition, the susceptor 111 transmits a rotational motion to the susceptor rotating plate shaft 146 by the rotation feedthrough 154, the gear 122 on the rotation sleeve, and the rotation motor 155 to rotate the susceptor 111. . The vertical movement interval change of the susceptor 111 may be determined by the selected operation mode.

As shown in FIG. 9, the reactor internal chamber of the present invention includes an upper chamber 108-1, a susceptor 111, a gas nozzle assembly 124, a gas flow control valve 129, 130, and 131, exhaust gas. Reference is made to the top and side views of an embodiment consisting of a gas throttling plate 115, a substrate entrance 145, and a reactor door 144. The internal components of the gas nozzle assembly 124 and the exhaust gas control plate 115 are made of heat resistant materials such as quartz, silicon carbide, and ceramics.

In this case, while spraying the susceptor 111 to improve the deposition uniformity of the substrate 110, the gas injection divides the module of the gas nozzle assembly 124 into five or more regions and three or more flow control valves 129 and 130. , 131 is injected into the inner chamber 108 by adjusting the flow rate independently.

At this time, since the dopant gas is very sensitive to the temperature change of the substrate 110, the dopant gas concentration of the susceptor center 130 and the dopant gas concentration injection amount of the susceptor edge 131 are independently adjusted to optimize the deposition of the deposition layer. Provide uniform concentration uniformity. In addition, the exhaust gas control plate 115 is preferably formed to form one or more holes (Hole) through which the exhaust gas flows. In this case, the function of the exhaust gas throttling plate 115 is to determine the rate and deposition rate of the reaction gas flow and to reduce the reverse circulating gas back to the reaction zone after the reaction is completed.

As shown in FIG. 4, the susceptor 111 is positioned at the first position D1, and silicon is deposited on the wafer. When the deposition is completed, the susceptor 111 moves to the second position D2. The wafer is loaded and poured.

Then, as shown in FIG. 10, the wafer carrier 119 carries the wafer to the port 145 for loading and releasing the wafer. In this case, the controller 136 is connected to the susceptor height adjuster 114, the wafer lifter 113, the reactor door Slit Valve 144, and the wafer carrier 119 to control the loading / unloading of the wafer.

In order to load / bake the wafer, the susceptor height adjuster 114 moves the acceptor 111 downward (D2). The wafer of the susceptor 111 moved down is lifted from the susceptor 111 by the wafer lifter 113 and the wafer lifter pin 120 so that the wafer carrier 119 can transport the wafer. Base 119 carries the wafer. And the susceptor 111 rotates to transport another wafer.

When the loading / unloading of the wafer is finished, close the reactor door (Slit Valve 144). And the susceptor 111 is moved upward by the susceptor height adjuster 114 (D1). The moved susceptor 111 is preferably rotatable by the susceptor support 112.

As in the above-described embodiment, the present invention provides a CVD reactor for an epitaxial process, in which the inner chamber 108 of the reactor in which the epitaxial layer is deposited is composed of a hot wall reactor in the substrate 110. It is configured to improve the throughput by reducing the heat balance, reducing reactor contamination, efficient injection of the reaction gas, cooling by the vertical movement of the susceptor (111).

Here, the epitaxial reactor includes a silicon carbide-coated graphite upper chamber (108-1) and a susceptor (111) capable of rotating and rotating motion, and an RF induction coil (105) for heating it.

The alternating current flowing through the coil segments generates a tremor magnetic field around each segment, and the electrical energy associated with the induced current is converted into thermal energy to independently control the upper chamber 108-1 and the susceptor 111, respectively. Heat.

On the other hand, the coil 105 is supported by a plurality of support studs 117, and different segments of the coil 105 can be set at different heights to change the distance between the coil segments.

Accordingly, the temperature profile in the inner chamber 108 is adjusted by the gap between the upper chamber 108-1 and the susceptor 111, the gap between the segments of the coil 105, the height of the stud 117, and the susceptor ( 111) In order to compensate for the loss of heat at the edge, the upper chamber 108-1 has a larger size than the susceptor 111. In particular, the heat loss compensation of the gas injection portion and ash caused by the unreacted gas at the exhaust gas outlet portion are made. Considering the deposition and turbulence, it is configured to be wider than the susceptor 111 region. In this case, the susceptor 111 is preferably configured to be rotatable in order to minimize the temperature gradient of the susceptor 111.

 Meanwhile, the inner chamber 108 is configured as a hot wall reactor to achieve a thermal equilibrium in the substrate 110, and a method of heating the substrate 111 to reduce the temperature difference between the rear surface and the front surface of the substrate 111. The temperature of the upper chamber 108-1 and the temperature of the susceptor 111, which is the lower chamber, can be independently heated and controlled to reduce the temperature difference of the substrate 110.

In addition, to reduce the temperature difference in the substrate 110, the reactor is configured in the pancake type so as to equalize the distance difference between the heat dissipation source and the substrate 110, and the uniform gas injection and deposition thickness on the substrate 110 can be uniformly adjusted. Rotating the susceptor 111 so as to be able to adjust the flow rate of the reaction gas injection for each susceptor 111 region, the gas nozzle and the control valve for each region, and the dopant gas flow control valve for each susceptor region It is preferable to install and feed from the reactor side.

In addition, the conventional hot wall reactor has a disadvantage in that it takes a long time to lower the temperature of the chamber. In order to solve this problem, in the step of lowering the chamber 108 temperature for loading / bending the substrate 110, the susceptor 111 is spaced apart from the upper chamber 108-1 by lowering the distance from the susceptor 111. Since the purge (hydrogen gas) to the temperature is configured to cool the temperature of the substrate 110 quickly.

Also. Deposits such as silicon deposited on the reactor heat walls are not easily peeled off due to the temperature difference due to the poly structure. The polysilicon deposited as described above coincides with the etching characteristics of the polysilicon deposited on the susceptor 111, and thus may be easily removed by a cleaning process using a halogen gas in situ.

Accordingly, in the high temperature processing step, the susceptor 111 carrying the substrate 110 and the upper chamber 108-1 are positioned close to each other, thereby performing heat treatment while controlling the thermal balance of the substrate 110 and providing a uniform reaction gas. Adjust the purge gas flow rate to achieve a flow of.

In addition, the substrate loading / unloading step is provided with a device that can quickly lower the temperature by separating from the upper chamber (108-1) in order to lower the temperature quickly.

Since the heat treatment method heats the primary upper chamber 108-1 and heats the secondary susceptor 111, the substrate 110 can be processed at a very stable and uniform temperature.

In one embodiment of the present invention, the preferred spacing and temperature adjustment between the upper chamber 108-1 and the susceptor 111 maintains uniformity in gas injection uniformity of the substrate 100 and at substrate 110 temperatures. One algorithm is used to decide to do so.

According to this algorithm, the upper chamber 108-1 and the susceptor 111 are heated to an appropriate temperature, and the temperature of the substrate 110 is uniformly provided by maintaining a constant interval.

In addition, the susceptor 111 having completed the deposition of the substrate 110 may be moved away from the upper chamber 108-1 during the cooling period. In this case, another advantage provided by the vertical movement of the susceptor 111 is that the temperature of the substrate 110 can be easily cooled, and the substrate 110 can be easily loaded / loaded.

Of course, other various processes may be performed using various aspects of the present invention using the embodiments described above.

That is, in another embodiment of the present invention, the thermal energy received from the upper chamber 108-1 is uniformly transmitted to the substrate 110 to maintain the same temperature as the thermal energy received from the susceptor 111 to maintain the temperature in the substrate 110. Provides the ability to keep uniform

Another aspect of the invention is such that the upper chamber 108-1 can block the side circumference to reduce heat loss near the reactor edge, ie around the edge. Since the upper chamber 108-1 reduces heat loss from the edge, it is possible to provide more uniform heat to the susceptor 111.

In another embodiment of the present invention, since the susceptor 111 thicker than that used in the conventional reactor can be used, the temperature fluctuation becomes uniform and the life is long.

In addition, since the reactor wall material is silicon carbide coated graphite, the problem of heat loss by the reactor wall can be solved, and unwanted deposits on the reactor wall are peeled off due to the difference in expansion coefficient, which causes the flakes to contaminate the substrate and the reactor. The problem can be solved.

Advantages of embodiments of the present invention solve existing problems for applications such as silicon epitaxy due to the temperature uniformity of the substrate 110 by the inner chamber 108 material of the reactor and the heat walls, and the silicon epilayer Its high growth rate, thick epitaxial growth, and high intrinsic resistance make it possible to grow silicon. In addition, the substrates 110 patterned using the silicon source gas without chlorine (Cl) also have the advantage that there is no pattern shift, distortion and loss even after epitaxial growth.

In addition, embodiments of the present invention may be used in various high temperature processes for manufacturing a semiconductor device. Depending on the process gas selected, semiconductor substrate processing steps such as annealing, dopant activation, chemical vapor deposition, epitaxial growth, silicide formation, and oxide reflow may be used in suitable processes.

Hereinafter, an embodiment of the heat treatment method of the semiconductor substrate 110 according to the present invention will be described.

First, the susceptor 111 is rotated to be positioned adjacent to the upper chamber 108-1.

Subsequently, energy is inductively coupled from the inductor 105 to the upper chamber 108-1 to heat the upper chamber 108-1.

Then, energy is inductively coupled from the inductor 105 to the susceptor 111 to heat the susceptor 111.

Subsequently, a reaction gas is injected into the reactor, and a material layer is deposited on the substrate 110.

Subsequently, after the deposition process, the susceptor 111 is lowered to separate from the upper chamber 108-1 for cooling the substrate 110, and the substrate 110 and the susceptor 111 are cooled.

Finally, the deposited substrate 110 is loaded, and one process is completed by loading a new substrate into the susceptor 111.

At this time, the separation distance between the upper chamber 108-1 and the susceptor 111 is to maintain a larger separation distance in the chamber cooling section than in the reaction step, the upper chamber 108-1 and the susceptor ( 111, it is preferable to further include a separation distance adjustment step that can adjust the separation distance between as needed during the process.

In addition, the detailed description related to the heat treatment is omitted because it overlaps with the heat treatment apparatus described above.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of course, this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the equivalents as well as the claims to be described later.

1 is a cross-sectional view of the substrate of the high frequency induction heating method.

Figure 2 is a photograph of polysilicon (Halo) deposited on the back of the substrate after epi growth.

3 is a cross-sectional view of the substrate of the infrared lamp heating method.

4 is a conceptual diagram showing the configuration of the epitaxial growth apparatus.

5 is a plan view of the upper chamber coil

6 is a susceptor coil top view

7 is a control conceptual diagram of the epitaxial growth apparatus;

8 is a conceptual diagram showing the configuration of the epitaxial growth apparatus;

9 is a reactor inner chamber.

10 is a wafer ordering and unloading step diagram of the epitaxial growth apparatus.

<Description of reference numerals for main parts of the drawings>

101: assembly plate support 102: cooling water pipe

103: RF coil assembly plate 104: RF coil cover

105: RF coil 106: temperature sensor

107: outer chamber 108: inner chamber

109 body 110: substrate

111 susceptor 112 susceptor holder

113: substrate lifter 114: susceptor support

115: exhaust gas control plate 116: hydrogen supply nozzle

117: coil stud 118: main gas nozzle

119: substrate carrier 120: substrate lift pin

121: polysilicon deposition (Halo) 122: gear on the rotating sleeve

123: substrate lift pin cover 124: gas nozzle assembly

125: susceptor heat conduction 126: deposit deposition (Dome coating)

127: infrared lamp 128: inner chamber support

129: gas flow control valve 1 130: gas flow control valve 2

131: gas flow control valve 3 132: reflector

133: housing 134: cover

135: sealing material (insulator) 136: controller

137: susceptor outside temperature sensing connector

138: susceptor inner temperature sensing connector

139: RF Power Control Connector (Top Chamber)

140: RF power control connector (susceptor)

141: susceptor height adjustment connector 142: main gas adjustment connector

143: exhaust gas control connector 144: reactor door (Slit Valve)

145: substrate entrance 146: susceptor rotary plate shaft

147: mounting plate 148: susceptor lifting plate

149: linear actuator 150: rotational feedthrough

151: bellows 152: lifting motor

153: lifting guide bearing 154: rotary feedthrough

155: rotation motor

Claims (21)

In the heat treatment apparatus of a semiconductor substrate, An inner chamber composed of an upper chamber, which is a hot wall, and a susceptor spaced apart in the lower direction of the upper chamber and formed in the center of the reactor to support the substrate; An inductor for supplying electromagnetic energy inside the reactor to heat the substrate; A gas source supplying gas into the reactor for depositing the desired film on the substrate; Purge gas (H ₂ Gas Purge) supplied to form an atmosphere inside the reactor; A substrate handling device for loading / unloading a substrate; And Including; lifting device for mediating the vertical movement of the susceptor according to the process-specific section, including, The semiconductor substrate heat treatment apparatus for heating the upper chamber and the susceptor to an appropriate temperature through the induction apparatus, and maintaining the temperature of the substrate uniformly by adjusting the interval between the upper chamber and the susceptor for each process. The method of claim 1, The induction apparatus is composed of an electromagnetic induction coil, and the semiconductor substrate heat treatment apparatus, characterized in that installed in the upper upper chamber and the lower susceptor The method of claim 1, And a controller connected to the upper chamber, the susceptor and the induction coil, the controller configured to control the substrate temperature to control the uniform temperature of the substrate. The method of claim 3, Wherein the controller gradually increases the susceptor temperature while raising the temperature of the upper chamber to uniformly form the upper and lower temperatures of the substrate. The method of claim 3, The controller enables operation control of the vertical movement of the elevating apparatus for each process so that the susceptor temperature is not higher than the substrate temperature, and the controller is susceptor height adjuster, wafer lifter, reactor door, wafer carrier and mechanism. Semiconductor substrate heat treatment apparatus 3. The method of claim 2, The induction coil is composed of an RF coil assembly plate of a square or circular shape, a plurality of RE coils assembled in a radial form on the assembly plate, and coil studs installed at periodic intervals along the coil length on the RF coil. Semiconductor substrate heat treatment apparatus The method of claim 6, Semiconductor substrate heat treatment apparatus for circulating the refrigerant through the RF coil in order to prevent overheating of the induction coil The method of claim 7, wherein Semiconductor substrate heat treatment apparatus for adjusting the height of the coil stud to maintain the temperature uniformity of the substrate The method of claim 5, Wherein the controller drives the elevating device to lower the susceptor to cool the chamber after completion of the operation. The method of claim 9, The controller is a semiconductor substrate heat treatment apparatus characterized in that to perform the load / unload command to the substrate susceptor temperature decreases The method according to any one of claims 1 to 10, The upper chamber and the susceptor are made of silicon carbide coated graphite and the semiconductor substrate heat treatment apparatus, characterized in that formed in the range of 0.5 to 1.5 inches The method according to any one of claims 1 to 10, And a rotation member for rotating the susceptor. The method of claim 12, The susceptor height adjusting connector constituting the rotating member adjusts the height of the susceptor to maintain the temperature of the substrate, provides a rotational force to the susceptor, and the susceptor lift plate is a linear actuator for raising / lowering the susceptor. Driven up and down by the semiconductor substrate, wherein the rotational movement is transmitted from the motor to the linear actuator through a rotational feedthrough. The method of claim 13, The alignment of the susceptor lifting plate is maintained using a lifting guide bearing, and the vertical movement by the susceptor lifting plate is made by raising the susceptor (D1) or lowering (D2) according to the process step by the mounting tower. Semiconductor substrate heat treatment apparatus The method of claim 11, A semiconductor nozzle comprising a gas nozzle and a control valve for each region to adjust the flow rate of the reaction gas injection for each susceptor region, and a dopant gas flow control valve is installed for each susceptor region and supplied from the reactor side Substrate Heat Treatment Equipment The method of claim 15, The dopant gas may be controlled to independently adjust the dopant gas concentration of the susceptor center 130 and the dopant gas concentration injection amount of the susceptor edge 131 to provide the optimum dopant concentration uniformity of the deposition layer. Semiconductor substrate heat treatment apparatus The method of claim 11, The housing, the body and the lid are removably configured to protect the areas of the outer chamber surrounding the upper chamber and form a sealing, the sealing being electrically insulated between the lid and the housing of the reactor. Semiconductor substrate heat treatment apparatus comprising water The method of claim 17, The housing, the body, and the lid may be formed of any one of ceramic, aluminum alloy, and stainless steel, and cooling water may be circulated to a coolant pipe for cooling the inner chamber wall, and the inner chamber wall may be A semiconductor substrate heat treatment apparatus characterized in that the temperature is measured by using a temperature sensor and fed back to control the flow of fluid on the control valve. In the processing method of a semiconductor substrate, Rotating the susceptor and positioning the susceptor adjacent to the upper chamber in the reactor; B inductively coupling energy from an inductor to the susceptor to heat the upper chamber; C) inductively coupling energy from an inductor to the susceptor to heat the susceptor: D injecting the reaction gas into the reactor; Depositing a material layer on the substrate; F lowering a susceptor to separate from the upper chamber for cooling the substrate after the deposition process; G for cooling the substrate and susceptor; And And depositing a new substrate on a susceptor. The method of claim 19, The separation distance between the upper chamber and the susceptor is maintained larger in the chamber cooling section than in the reaction step. The method of claim 19 or 20, A semiconductor substrate heat treatment method further comprising the step of adjusting the separation distance between the upper chamber and the susceptor prior to any one of steps a to g.

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