KR20100024211A - Fringe field switching mode liquid crystal display device - Google Patents

Abstract

PURPOSE: A fringe field switching mode liquid crystal display is provided to improve penetration ratio and aperture ratio by controlling foreground generation. CONSTITUTION: A fringe field switching mode liquid crystal display includes a gate line(105), a gate insulating layer, a data line(130), a thin film transistor(Tr), a pixel electrode(155), a protective layer, a common electrode(170), a second substrate, a black matrix(184), a color filter layer, and a liquid crystal layer. The gate line is formed on a first substrate. The gate insulating layer is formed on the gate line. The data line crosses with the gate line and defines a pixel area. The thin film transistor is electrically connected with the gate line and data line. The pixel electrode is contacted with drain electrode of the thin film transistor. The protective layer covers the thin film transistor and the data line. The common electrode has multiple aperture units with a bar shape formed to overlap with the gate line. The second substrate faces with the first substrate. The color filter lay covers the block matrix. The liquid crystal layer is inserted between the first substrate and the second substrate.

Description

Fringe field switching mode liquid crystal display device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a fringe field switching mode liquid crystal display device having a fringe field effect and suppressing foreground generation to improve aperture ratio and transmittance.

In general, the liquid crystal display device is driven by using the optical anisotropy and polarization of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy to express image information.

Currently, an active matrix liquid crystal display device (AM-LCD: below Active Matrix LCD, abbreviated as liquid crystal table market value), in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner, has the best resolution and video performance. It is attracting attention.

The liquid crystal display includes a color filter substrate on which a common electrode is formed, an array substrate on which pixel electrodes are formed, and a liquid crystal interposed between the two substrates. In such a liquid crystal display, the common electrode and the pixel electrode are caused by an electric field applied up and down. It is excellent in the characteristics, such as transmittance | permeability and aperture ratio, by the method of driving a liquid crystal.

However, the liquid crystal drive due to the electric field applied up and down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, a transverse field type liquid crystal display device having excellent viewing angle characteristics has been proposed to overcome the above disadvantages.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

As shown, the upper substrate 9, which is a color filter substrate, and the lower substrate 10, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 11 is interposed between the upper and lower substrates 9, 10. It is.

The common electrode 17 and the pixel electrode 30 are formed on the lower substrate 10 on the same plane. In this case, the liquid crystal layer 11 is formed by the common electrode 17 and the pixel electrode 30. It is operated by the horizontal electric field (L).

2A and 2B are cross-sectional views illustrating operations of on and off states of a general transverse electric field type liquid crystal display device, respectively.

First, referring to FIG. 2A, which illustrates an arrangement of liquid crystals in an on state where a voltage is applied, a phase change of a liquid crystal 11a at a position corresponding to the common electrode 17 and the pixel electrode 30 is performed. Although the liquid crystal 11b positioned in the section between the common electrode 17 and the pixel electrode 30 is formed by the horizontal electric field L formed by applying a voltage between the common electrode 17 and the pixel electrode 30, It is arranged in the same direction as the horizontal electric field (L). That is, in the transverse electric field type liquid crystal display device, since the liquid crystal moves by the horizontal electric field, the viewing angle is widened.

Therefore, when the transverse electric field type liquid crystal display device is viewed from the front, it can be seen in the up / down / left / right directions even in the about 80 to 85 ^o direction without inversion phenomenon.

Next, referring to FIG. 2B, since no voltage is applied to the liquid crystal display, a horizontal electric field is not formed between the common electrode and the pixel electrode, so that the arrangement state of the liquid crystal layer 11 does not change.

However, such a transverse field type liquid crystal display device has an advantage of improving the viewing angle, but has a disadvantage of low aperture ratio and low transmittance.

Therefore, in order to characterize the shortcomings of the transverse electric field type liquid crystal display, a fringe field switching mode LCD is characterized in that the liquid crystal is operated by a fringe field.

3 is a plan view of one pixel area of a conventional fringe field switching mode liquid crystal display device.

As shown in the drawing, the conventional fringe field switching mode liquid crystal display 40 has a large liquid crystal layer (not shown) interposed between the array substrate 41 and the color filter substrate (not shown) and the two substrates 41 (not shown). City).

First, as shown in the drawing, a plurality of gate lines 43 extend and extend in one direction, and the plurality of pixel regions P are defined by crossing the plurality of gate lines 43. Many data wirings 51 are formed.

In addition, each of the plurality of pixel regions P is connected to the data line 51 and the gate line 43 defining the gate electrode 45, the gate insulating layer (not shown), the semiconductor layer (not shown), and the like. The thin film transistor Tr, which is a switching element including the source and drain electrodes 55 and 58, is formed.

In addition, in each pixel region P, a plate-shaped pixel electrode 60 electrically connected to the drain electrode 58 of the thin film transistor Tr and having a plurality of bar-shaped openings op is formed. It is. In this case, the plate-shaped pixel electrode 60 does not overlap with the gate and data lines 43 and 51 defining each pixel area P, that is, inside the pixel area P. ) Is spaced apart from the predetermined width. The reason why the pixel electrode 60 is formed so as not to overlap the gate and the data lines 43 and 51 is that the pixel electrode 60 and the gate line 43 or the data line are interposed with a gate insulating film (not shown) therebetween. In the case of overlapping with 51, parasitic capacitance and the like are generated. This is to prevent the electric field distortion between the pixel electrode 60 and the common electrode 75 by coupling between layers.

In addition, the common electrode 75 is formed on the entire display area in which the plurality of pixel areas P is formed, overlapping the plate-shaped pixel electrode 60 corresponding to each pixel area P. In this case, the common electrode 75 is formed on the entire surface of the display area, but a portion corresponding to one pixel area P is indicated by a dotted line.

The array substrate 41 for a fringe field switching mode liquid crystal display device having such a configuration includes a pixel electrode 60 having the plurality of bar-shaped openings op for each pixel region P, and the common electrode. A voltage is applied to the 75 to form a fringe field.

Meanwhile, a color filter substrate (not shown) is provided to face the array substrate 41 having the above-described structure, and the color filter substrate (not shown) corresponds to each pixel region P. Color filter patterns of green, green, and blue are repeated in sequence, and a color filter layer (not shown) is formed, and the gate line 43, the data line 51, and the thin film transistor Tr forming a boundary of each pixel area P are formed. ), A black matrix 85 is formed.

However, in the conventional fringe field switching liquid crystal display 40 having the above-described configuration, the array substrate 41 has the openings op of the plurality of bars in correspondence with the common electrode 75. It can be seen that the pixel electrode 60, in particular, the plurality of openings op is completely overlapped. In this case, liquid crystal molecules (not shown) move in different directions because the electric field is not formed in one direction at both ends of the major axis of the opening op in the shape of the pixel electrode 60 and the common electrode 75. The boundary, that is, the foreground area DA, is generated. The foreground area DA is displayed irregularly dark compared to the surroundings because the liquid crystal display does not transmit light in a completely on state.

In the area where the foreground area DA is generated, light cannot be transmitted normally, thereby degrading the display quality when the user looks at the image. Therefore, in response to the portion where the foreground occurs, the foreground is generated by further expanding the black matrix 85 formed corresponding to the gate wiring 43, that is, making the width wider and forming the color filter substrate (not shown). I block the light coming out of the part.

However, when the black matrix 85 is configured to correspond to the portion where the foreground occurs, the area through which normal light transmits, that is, the aperture ratio of the pixel matrix P, is reduced, and thus the actual transmittance of the light is reduced. There is a problem.

The present invention has been made to solve the problems of the conventional fringe field switching mode liquid crystal display, and the transmittance by omitting the black matrix formed in the foreground generating portion by minimizing or suppressing the foreground generating region at the end of the opening The purpose is to improve the quality of the image and to provide a high quality image.

A fringe field switching mode liquid crystal display device according to an embodiment of the present invention for achieving the above object includes a gate wiring formed extending in one direction on the first substrate; A gate insulating film formed over the gate wiring; A data line on the gate insulating layer, the data line crossing the gate line to define a pixel area; A thin film transistor electrically connected to the gate line and the data line; A plate-shaped pixel electrode formed on the gate insulating layer in contact with the drain electrode of the thin film transistor and overlapping a first gate line with a first gate line; A protective layer formed over the pixel electrode and covering the thin film transistor and the data line; A common electrode on the passivation layer corresponding to the pixel electrode, the long axis of which is parallel to the data line and having a plurality of bar openings formed at both ends of the long axis to overlap the gate line; A second substrate facing the first substrate; A black matrix formed on the inner surface of the second substrate so as to be patterned and removed to correspond to the gate line and the pixel area and formed to correspond to the data line; A color filter layer covering the black matrix and formed to correspond to the pixel area; And a liquid crystal layer interposed between the first substrate and the second substrate.

A fringe field switching mode liquid crystal display device according to still another embodiment of the present invention includes a first substrate; A gate wiring formed extending in one direction on the first substrate; A gate insulating film formed over the gate wiring; A data line on the gate insulating layer, the data line crossing the gate line to define a pixel area; A thin film transistor electrically connected to the gate line and the data line; A plate-shaped pixel electrode formed on the gate insulating layer in contact with the drain electrode of the thin film transistor and overlapping a first gate line with a first gate line; A protective layer formed over the pixel electrode and covering the thin film transistor and the data line; A common electrode having a plurality of openings formed in a stripe type with end portions of the long axis connected to each other in the direction in which the data line extends in correspondence with the pixel electrode on the protective layer; A second substrate facing the first substrate; A black matrix formed on the inner surface of the second substrate so as to be patterned and removed to correspond to the gate line and the pixel area and formed to correspond to the data line; A color filter layer covering the black matrix and formed to correspond to the pixel area; And a liquid crystal layer interposed between the first substrate and the second substrate.

At this time, the black matrix is characterized in that it is formed extending in the region corresponding to the thin film transistor, the first width is characterized in that less than 50% of the gate wiring width.

In the fringe field switching mode liquid crystal display according to the present invention, since the occurrence of the foreground is suppressed at the end of the bar-shaped opening, the transmittance is improved by omitting the gate matrix and the black matrix for covering the opening end. Furthermore, there is an effect of improving the aperture ratio.

Furthermore, in each pixel region, the pixel electrode is formed to overlap the gate wiring at the front end by a predetermined width, thereby extending the electric field generating region to further improve the aperture ratio.

In addition, the generation of the foreground at the end of the opening in each pixel region is suppressed, thereby providing an image of high quality.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

4 is a plan view of one pixel area of a fringe field switching mode liquid crystal display according to an exemplary embodiment of the present invention, FIG. 5 is a cross-sectional view of a portion taken along the cutting line V-V of FIG. FIG. 4 is a cross-sectional view of a portion cut along the cutting line VI-VI. For convenience of description, an area in which a plurality of pixel areas are formed is defined as a display area.

Referring to FIG. 5, a fringe field switching mode liquid crystal display device 100 according to an embodiment of the present invention is interposed between an array substrate 101, a color filter substrate (not shown), and two substrates 101 (not shown). It is comprised including the liquid crystal layer (not shown).

First, the gate wiring 105 extends and extends in the first direction of the array substrate 101, and extends in the second direction and crosses the gate wiring 105 to define the pixel area P. 130 is configured.

In addition, the pixel region P is connected to the gate wiring 105 and the data wiring 130, and has a gate electrode 108, a gate insulating film (not shown), and an active layer of pure amorphous silicon (not shown). And a thin film transistor Tr including a source layer and a drain electrode 133 and 136 spaced apart from each other and a semiconductor layer (not shown) including an ohmic contact layer (not shown) of impurity amorphous silicon. In this case, in the drawing, the thin film transistor Tr is formed on the gate wiring 105 to further improve the aperture ratio of one pixel region P, thereby converting the gate wiring 105 itself into the gate electrode 108. Although the configuration is shown as an example, the gate electrode 108 may be formed in a branched shape from the gate wiring 105.

In addition, the most characteristic feature of the present invention is a plate-shaped pixel electrode 155 in contact with the drain electrode 136 of the thin film transistor Tr inside the pixel region P, and at the same time, the gate wiring 105 of the front end. And some overlapping. In this case, the width t1 overlapping the plate-shaped pixel electrode 155 and the gate wiring 105 of the front end is preferably 50% or less of the width t2 of the gate wiring 105. Typically, the width t2 of the gate wiring 105 is about 8 μm to about 12 μm, and in this case, it is preferable that the maximum width t1 overlapping is about 4 μm to about 6 μm. The reason why the overlap width t1 between the gate wiring 105 and the pixel electrode 155 at the front end is formed to be 50% or less of the gate wiring width t2 is because of the coupling between the neighboring pixel electrodes 105. This is to prevent electric field distortion caused by the ring. In the related art, the pixel electrode is formed to be located inside each pixel region to prevent electric field distortion. However, the pixel electrode 155 is formed to overlap the gate wiring 105 of the front end within a specific range. The parasitic capacitance generated by the overlapping of the gate wiring 105 and the gate wiring 105 or the electric field distortion caused by the coupling with the neighboring pixel electrode 155 is hardly generated. ) Is overlapped in a specific range that is 50% or less of the gate wiring width t2.

In addition, a plurality of bar openings op may be formed in front of the display area including the plurality of pixel areas P to correspond to the plate-shaped pixel electrodes 155 formed in each pixel area P. FIG. The common electrode 170 is formed. In this case, the common electrode 170 is formed on the entire display area, and in FIG. 4, one pixel area P is denoted by a reference numeral 170 in a dotted line for convenience of description.

Both ends of the plurality of bar-shaped openings OP formed in the pixel region P corresponding to the plate-shaped pixel electrodes 155 in the major axis direction are respectively formed in the gate wiring 105 and the gate wiring 105. It is characterized by being formed to overlap. In this case, a plurality of bar openings (ops) having a bar shape formed in the common electrode 170 may be formed as long as possible in the pixel area than in the prior art, thereby improving the transmittance.

The foreground having a predetermined width is generated at one end of the bar-shaped openings op by the shape of the plate-shaped pixel electrode 155 and the bar-shaped openings op. Even if this corresponds to the gate wiring 105 formed of the opaque metal material, since the light from the lower portion does not pass through, the light is not transmitted through the bar, it can be seen that it is naturally masked.

Meanwhile, referring to FIG. 7 (the same components as in the embodiment are denoted by the same reference numerals), which is a plan view of one pixel area of a fringe field switching mode liquid crystal display device according to a modification of the present invention, the entire display area The plurality of bar openings op having a bar shape formed in the common electrode 170 may have a structure in which the pixel areas P adjacent to each other in the extending direction of the data line 130 are connected to each other. It may be formed as. That is, a plurality of bar-shaped openings (ops) formed in the common electrode 170 are parallel to the data line 130 in a stripe form without dividing the pixel region P in the entire display area. It may be formed.

In this case, in the configuration according to the modified example of the present invention, except for the pixel area (not shown) located at the outermost part of the display area, both ends of the long axis of the opening op do not exist. Accordingly, since there is no short side surface at both ends of the long axis of each of the plurality of openings OP, except for the outermost pixel area (not shown), no electric field is formed at both ends. It doesn't work. Therefore, the liquid crystal molecules (not shown) positioned in this portion are affected by the electric field due to the long side surface of the opening op, so that the liquid crystal molecules (not shown) are driven in a predetermined direction so as to operate normally.

Therefore, the foreground as in the prior art does not occur or the foreground generating region is formed in the portion overlapping the gate wiring 105, so that the foreground generating portion is naturally hidden by the gate wiring 105 to improve the aperture ratio. At the same time, the transmittance is improved.

Meanwhile, referring back to FIG. 4, although the common electrode including a plurality of bar-shaped openings (ops) is formed on the entire surface of the display area, the thin film transistor Tr corresponds to the thin film transistor Tr. It may be formed in a shape that is removed, such as forming a plurality of openings (op) in the form of a bar (bar). This is because the parasitic capacitor may be overlapped with the gate electrode 108 of the thin film transistor Tr to adversely affect the switching operation of the thin film transistor Tr.

On the other hand, the color filter layer (not shown) and the data having a form in which the red, green, and blue color filter patterns are sequentially repeated for each pixel area corresponding to the array substrate 101 according to the embodiments and modifications having the above-described configuration A black matrix 184 is formed corresponding to the wiring 130 and the thin film transistor Tr, and includes a color filter substrate (not shown) covering the color filter layer (not shown) and including an overcoat layer (not shown) formed on the entire surface. ) Is configured. In addition, a liquid crystal layer (not shown) is provided between the array substrate 101 and the color filter substrate (not shown). In this case, the black matrix 184 is formed so as to surround each pixel region corresponding to the gate and data lines and the thin film transistor in the related art, but in the case of the present invention, the black matrix 184 is formed in the gate line 105. In this case, the aperture ratio of the pixel region P is improved by being omitted only and corresponding to the data line 130 and the thin film transistor Tr.

The reason why the black matrix 184 is not required to correspond to the gate wiring 105 in the embodiment and the modification of the present invention is that the pixel electrode 155 overlaps the gate wiring 105 of the previous stage by a predetermined width. And overlap the gate wiring to both ends of the bar-shaped openings op in each pixel region P (refer to FIG. 4), or stripe type for the entire display region. 7 is formed in a shape connected to each other (see FIG. 7), so that the occurrence of foreground at both ends of the long axis of each opening (op) is minimized or suppressed, so that a separate black matrix 184 having a wider width than that of the gate wiring 105 is provided. This is because the display quality is not a problem even if a) is not formed.

Hereinafter, the cross-sectional structure of the fringe field switching mode liquid crystal display according to the exemplary embodiment of the present invention will be described with reference to FIGS. 5 and 6. In the case of the modification, only the cross-sectional structure at the portion overlapping with the gate wiring of the opening is different, and other cross-sectional structures are the same as in the embodiment, so only the portions having the difference point are mentioned briefly. In this case, for convenience of description, an area in which the thin film transistor is formed in the pixel area is defined as a switching area.

As shown, in the fringe field switching mode liquid crystal display device 100 according to the exemplary embodiment of the present invention, the array substrate 101 may include an example of a metal material having low resistance characteristics on the transparent insulating substrate 101. For example, a metal material selected from aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy may be connected to a gate wiring (not shown) extending in the first direction and connected to the gate to the switching region TrA. The electrode 108 is formed.

Meanwhile, in the drawing, the gate wiring (not shown) and the gate electrode 108 are shown as an example of a single layer structure, but may be formed to have a double layer structure. In the case of forming a double layer structure, the lower layer is made of one metal material selected from among aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy, and the upper layer is made of molybdenum (Mo). desirable.

In addition, a gate insulating film 115 made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the entire surface of the substrate 101 over the gate wiring 105 and the gate electrode 108. have.

In addition, a semiconductor layer including an active layer 120a of pure amorphous silicon and an ohmic contact layer 120b of impurity amorphous silicon in the switching region TrA on the gate insulating layer 115, corresponding to the gate electrode 108. 120 is formed on the semiconductor layer 120, and a second metal material such as molybdenum (Mo), chromium (Cr), aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper Source and drain electrodes 133 and 136 made of any one material of the alloy and spaced apart from each other are formed. In this case, the active layer 120a is exposed between the source and drain electrodes 133 and 136 spaced apart from each other, and the gate electrode 108 and the gate insulating film 115 sequentially stacked in the switching region TrA. The semiconductor layer 120 and the source and drain electrodes 133 and 136 form a thin film transistor Tr.

In addition, a data line 130 extending in the second direction is formed on the gate insulating layer 115 to cross the gate line 105 to define the pixel region P. In this case, the source electrode 133 of the thin film transistor Tr is connected to the data line 130. In this case, the data line 130 and the source and drain electrodes 133 and 136 may also be configured to have a double layer structure.

Meanwhile, a semiconductor pattern having a double layer structure of the first pattern 121a and the second pattern 121b as the same semiconductor material constituting the semiconductor layer 120 between the data line 130 and the gate insulating layer 115. 121 is further formed. The semiconductor pattern 121 is due to the method of manufacturing the array substrate 101, and may be formed under the data line 130 or may be omitted as shown. That is, when the semiconductor layer 120, the data line 130, and the source and drain electrodes 133 and 136 are simultaneously formed through one mask process, the semiconductor layer 120 and the data line 130 are formed under the data line 130 as shown. The semiconductor pattern 121 having a double layer structure is formed, and the semiconductor layer 120, the data line 130, and the source and drain electrodes 133 and 136 are formed through different mask processes, that is, two masks, respectively. In this case, the semiconductor pattern 121 is not formed below the data line 130.

In addition, each pixel region P is formed of a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), on the gate insulating layer 115, and the drain electrode 136. The pixel electrode 155 which is in direct contact with each other and has a plate shape overlaps with a gate wiring (not shown) of a previous stage and is formed to overlap a predetermined width. In this case, the width of the pixel electrode 155 and the gate wirings (not shown) overlapping with each other may be 50% or less of the gate wiring width.

Meanwhile, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) or an organic insulating material such as benzocyclobutene (BCB) is disposed on the data line 130 and the thin film transistor Tr. Alternatively, the protective layer 160 made of photo acryl is formed on the entire surface. In the figure, the inorganic insulating material is formed to reflect the step of the components below it, but the state is formed. However, when the organic insulating material is formed, the surface becomes flat.

In addition, the protective layer 160 has a common plate shape for the entire display area including the pixel areas P as a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The electrode 170 is formed. In this case, in the common electrode 170, a plurality of openings op having a bar shape are formed in parallel with the data line 130 for each pixel electrode 155 formed in each pixel area P. have. In the drawing, the plurality of openings op of the bar shape are formed in the common electrode 170 in the common electrode 170 by spaced apart from each other at equal intervals, and are configured as three (see FIG. 4). However, in order to form an efficient fringe field, an opening op corresponding to each pixel area P may be formed in an appropriate number within a range of about 2 to about 10.

Meanwhile, in FIG. 5, the plate-shaped common electrode 170 covers the thin film transistor Tr in each pixel region P on the passivation layer 160 and has a plurality of bar openings op. Although illustrated as having a, as a modification, the thin film transistor Tr may be removed to correspond to the protective layer 160.

In addition, in the color filter substrate 181 spaced apart from and corresponding to the array substrate 101 having the above-described configuration, the data line 130 and the thin film transistor Tr of the array substrate 101 are disposed on the inner surface thereof. In response to this, the black matrix 184 is formed. In addition, a color filter layer 186 is formed to cover the black matrix 184 and repeat the red, green, and blue color filter patterns 186a, 186b (not shown) corresponding to each pixel area P. The overcoat layer 188 is formed on the entire surface of the color filter layer 186 with a transparent organic insulating material. In this case, the overcoat layer 188 may be omitted.

In addition, the liquid crystal layer 191 is interposed between the array substrate 101 and the color filter substrate 181 having the above-described configuration to form the fringe field switching mode liquid crystal display device 100 according to the present invention. .

The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit of the present invention.

1 is a cross-sectional view schematically showing a part of a general transverse electric field type liquid crystal display device.

2A and 2B are cross-sectional views showing operations of on and off states of a general transverse electric field type liquid crystal display device, respectively.

3 is a plan view of one pixel area of a conventional fringe field switching mode liquid crystal display device;

4 is a plan view of one pixel area of a fringe field switching mode liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 5 is a cross-sectional view of a portion cut along the cutting line VV of FIG. 4. FIG.

FIG. 6 is a cross-sectional view of a portion cut along the cutting line VI-VI of FIG. 4. FIG.

7 is a plan view of one pixel area of a fringe field switching mode liquid crystal display according to a modification of the present invention;

<Brief description of the main parts of the drawing>

100: fringe field switching mode liquid crystal display device

101: array substrate 105: gate wiring

108: gate electrode 130: data wiring

133: source electrode 136: drain electrode

155: pixel electrode 170: common electrode

184: Black Matrix

P: pixel area op: opening

Tr: Thin Film Transistor

Claims (4)

A gate wiring formed extending in one direction on the first substrate; A gate insulating film formed over the gate wiring; A data line on the gate insulating layer, the data line crossing the gate line to define a pixel area; A thin film transistor electrically connected to the gate line and the data line; A plate-shaped pixel electrode formed on the gate insulating layer in contact with the drain electrode of the thin film transistor and overlapping a first gate line with a first gate line; A protective layer formed over the pixel electrode and covering the thin film transistor and the data line; A common electrode on the passivation layer corresponding to the pixel electrode, the long axis of which is parallel to the data line and having a plurality of bar openings formed at both ends of the long axis to overlap the gate line; A second substrate facing the first substrate; A black matrix formed on the inner surface of the second substrate so as to be patterned and removed to correspond to the gate line and the pixel area and formed to correspond to the data line; A color filter layer covering the black matrix and formed to correspond to the pixel area; Liquid crystal layer interposed between the first substrate and the second substrate Fringe field switching mode liquid crystal display comprising a. A first substrate; A gate wiring formed extending in one direction on the first substrate; A gate insulating film formed over the gate wiring; A data line on the gate insulating layer, the data line crossing the gate line to define a pixel area; A thin film transistor electrically connected to the gate line and the data line; A plate-shaped pixel electrode formed on the gate insulating layer in contact with the drain electrode of the thin film transistor and overlapping a first gate line with a first gate line; A protective layer formed over the pixel electrode and covering the thin film transistor and the data line; A common electrode having a plurality of openings formed in a stripe type with ends of the long axis connected to each other in a direction in which the data line extends in correspondence with the pixel electrode on the protective layer; A second substrate facing the first substrate; A black matrix formed on the inner surface of the second substrate so as to be patterned and removed to correspond to the gate line and the pixel area and formed to correspond to the data line; A color filter layer covering the black matrix and formed to correspond to the pixel area; Liquid crystal layer interposed between the first substrate and the second substrate Fringe field switching mode liquid crystal display comprising a. The method according to claim 1 or 2, And the black matrix extends over an area corresponding to the thin film transistor. The method according to claim 1 or 2, And the first width is 50% or less of the gate wiring width.

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