KR20100023274A - Ultra violet light emitting diode with a aluminum reflection structure and fabrication method of the same - Google Patents
Ultra violet light emitting diode with a aluminum reflection structure and fabrication method of the same Download PDFInfo
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- KR20100023274A KR20100023274A KR1020080081950A KR20080081950A KR20100023274A KR 20100023274 A KR20100023274 A KR 20100023274A KR 1020080081950 A KR1020080081950 A KR 1020080081950A KR 20080081950 A KR20080081950 A KR 20080081950A KR 20100023274 A KR20100023274 A KR 20100023274A
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Abstract
A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are formed in sequence; A reflective structure of Al formed to expose at least a portion of the second conductive semiconductor layer on the second conductive semiconductor layer; An ohmic electrode formed to cover the second conductivity-type semiconductor layer exposed between the reflective structures of Al; The active layer provides an ultraviolet light emitting diode, characterized in that to emit ultraviolet light.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultraviolet light emitting diode and a method of manufacturing the same, and more particularly, to an ultraviolet light emitting diode having an aluminum reflective structure partially patterned and an ohmic electrode and a method of manufacturing the same.
Recently, much attention has been paid to high-brightness white light emitting devices using nitride semiconductors and their economic value is also great. There are three ways to implement a high brightness white light emitting device.
First, a method of implementing white by combining three light emitting devices emitting three primary colors of red, green, and blue. In order to make a single white high luminance light emitting device by this method, a technique of individually controlling light emission characteristics such as temperature life and device life of three color light emitting devices must be preceded, which makes it difficult to implement a white light source.
Second, white is achieved by exciting a yellow phosphor using a blue light emitting device as a light source. When using this method, the luminous efficiency is excellent, the color rendering index (CRI) is low, and the color rendering index changes according to the current density. Therefore, there is a problem in obtaining a white high luminance light emitting device close to sunlight. .
Lastly, using a ultraviolet light emitting diode (UV LED) as a light source to excite the three primary phosphors to create a white. This method is most feasible because it has excellent luminescence properties and color rendering index properties, so that a high brightness white light emitting device close to sunlight can be realized. At this time, the problem of increasing the efficiency of the ultraviolet light emitting element is considered to be the most important problem.
The technology related to the ultraviolet light emitting diode is Korean Patent No. 10-0608929 (Method for manufacturing III-V nitride semiconductor ultraviolet light emitting device, registered on July 27, 2006) and Korean Patent No. 10-0709058 (ultraviolet light emitting device , Registered April 12, 2007).
Two major approaches have been attempted to improve the efficiency of light emitting diodes. The first is to increase the internal quantum efficiency, which is determined by the crystal quality and the epilayer structure, and the second is that the light generated from the light emitting diodes is not emitted to the outside but is lost inside. To increase the light extraction efficiency (light extraction efficiency).
Accordingly, a light emitting diode that emits light in the visible wavelength range employs a reflective film made of a material having high reflectance in order to increase light extraction efficiency. However, in the ultraviolet wavelength band, metal materials other than Al, for example, Ag and Au, have a problem in that they cannot properly function as reflecting films for ultraviolet light due to their deterioration in reflectance and weakness of heat. On the other hand, Al has a high reflectance in the ultraviolet band but the ohmic characteristics are not good, there is an inappropriate problem as an ohmic electrode of the compound semiconductor layer.
The problem to be solved by the present invention is to adopt a reflective structure made of Al having a high reflectance in the ultraviolet wavelength band and to solve the problem of difficult to use Al as an ohmic electrode to provide an ultraviolet light emitting diode having excellent light efficiency in the ultraviolet wavelength band. It is.
According to one aspect of the invention, the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer formed in sequence; A reflective structure of Al formed to expose at least a portion of the second conductive semiconductor layer on the second conductive semiconductor layer; An ohmic electrode formed to cover the second conductivity-type semiconductor layer exposed between the reflective structures of Al; The active layer is provided with an ultraviolet light emitting diode, characterized in that for emitting ultraviolet light.
Preferably, the ohmic electrode may be formed by covering an upper portion of the reflective structure of Al.
Preferably, the ohmic electrode may be formed in a multilayer.
Preferably, the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 1nm to 400nm.
Preferably, the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 200nm to 350nm.
Preferably, the reflective structure may be formed of a matrix structure of islands or a plurality of lines or a mesh structure.
Preferably, the ultraviolet light emitting diode is a conductive bonding substrate formed to cover the ohmic electrode; The method may further include an electrode pad formed on the first conductive semiconductor layer.
Preferably, the ultraviolet light emitting diode further comprises an insulating bonding substrate formed covering the ohmic electrode; Portions of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are etched to expose a portion of the ohmic electrode, and an upper portion of the first conductive semiconductor layer and the exposed ohmic electrodes, respectively. An electrode pad may be formed.
Preferably, in the ultraviolet light emitting diode, a portion of the first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are etched to expose a portion of the first conductive semiconductor layer, and the second conductive semiconductor layer is exposed. An electrode pad may be formed on an upper portion of the substrate and on the exposed first conductive semiconductor layer.
According to another aspect of the invention, the step of depositing Al on the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer formed on the growth substrate; Partially patterning the deposited Al to form a reflective structure of Al to expose the second conductivity type semiconductor layer; Forming an ohmic electrode to cover the second conductivity type semiconductor layer exposed between the reflective structures of Al; The active layer is provided with a UV light emitting diode manufacturing method, characterized in that for emitting ultraviolet light.
Preferably, the ultraviolet light emitting diode manufacturing method comprises the steps of forming a bonding substrate on the ohmic electrodes via a bonding metal; The method may further include separating the growth substrate.
Preferably, the ohmic electrode may be formed to cover an upper portion of the reflective structure of Al.
Preferably, the ohmic electrode may be formed in a multilayer.
The forming of the reflective structure of Al may be performed by etching the deposited Al into a matrix structure of islands or a plurality of lines or a mesh structure using photolithography.
Preferably, the ultraviolet light emitting diode manufacturing method further comprises the step of forming an electrode pad on the first conductivity type semiconductor layer; The bonding substrate may be a conductive substrate.
Preferably, the method of manufacturing an ultraviolet light emitting diode includes etching a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer to expose a portion of the ohmic electrode; Forming electrode pads on each of the first conductive semiconductor layer and the exposed ohmic electrodes; The bonding substrate may be an insulating substrate.
Preferably, the method of manufacturing an ultraviolet light emitting diode may include exposing a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer to expose a portion of the first conductive semiconductor layer; The method may further include forming electrode pads on the second conductive semiconductor layer and the exposed first conductive semiconductor layer, respectively.
Preferably, the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 1nm to 400nm.
Preferably, the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 200nm to 350nm.
According to an embodiment of the present invention, in the ultraviolet light emitting diode emitting light of the ultraviolet wavelength band, a reflective structure made of Al having a mesh structure is formed on the second conductive semiconductor layer (p-type semiconductor layer), By forming the ohmic electrode to cover the reflective structure, light of the ultraviolet wavelength band generated in the active layer is effectively reflected by the reflective structure of Al to be emitted to the outside, and the ohmic characteristics can be satisfied by the ohmic electrode.
In one embodiment of the present invention, by forming a reflective structure of Al to partially expose the p-type semiconductor layer through the pattern etching on the p-type semiconductor layer, the ultraviolet light is lost in the light emitting diode by effectively reflecting light in the ultraviolet wavelength band In addition, the ohmic electrode can be reduced between the reflective structures of Al to effectively improve ohmic characteristics with the p-type semiconductor layer, thereby improving the reliability of the ultraviolet light emitting diode.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a cross-sectional view for describing an ultraviolet light emitting diode according to an embodiment of the present invention.
Referring to FIG. 1, compound semiconductor layers including a first
The
A
The
An
The
The
The area ratio of the
Meanwhile, a
Meanwhile, the
2 to 7 are cross-sectional views illustrating a method of manufacturing an ultraviolet light emitting diode according to an embodiment of the present invention.
Referring to FIG. 2, compound semiconductor layers are formed on the
Meanwhile, the
Referring to FIG. 3, an Al
Referring to FIG. 4, after depositing Al, partially patterning and etching the
Referring to FIG. 5, after forming the
Referring to FIG. 6, a
Referring to FIG. 7, the
Subsequently, an electrode pad (73 in FIG. 1) is formed on the first conductivity
Meanwhile, an ohmic electrode (not shown) may be formed on the first
8 is a cross-sectional view for describing an ultraviolet light emitting diode according to another embodiment of the present invention.
Referring to FIG. 8, the configuration and operation of the light emitting diode illustrated in FIG. 1 are almost the same. However, in FIG. 1, the
9 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.
Referring to FIG. 9, the structure and operation of the ultraviolet light emitting diode illustrated in FIG. 1 are almost the same. However, in FIG. 1, the
10 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention. Referring to FIG. 10, the structure and operation of the ultraviolet light emitting diode illustrated in FIG. 9 are substantially the same, except that the
11 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.
Referring to FIG. 11, compound semiconductor layers including a first
The
The
The
The area ratio of the
Meanwhile, a portion of the second
The
The ultraviolet light emitted from the
12 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention. Referring to FIG. 12, the structure and operation of the ultraviolet light emitting diode illustrated in FIG. 11 are almost the same, except that the
The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.
1 is a cross-sectional view for describing an ultraviolet light emitting diode according to an embodiment of the present invention.
2 to 7 are cross-sectional views illustrating a method of manufacturing an ultraviolet light emitting diode according to an embodiment of the present invention.
8 is a cross-sectional view for describing an ultraviolet light emitting diode according to another embodiment of the present invention.
9 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.
10 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.
11 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.
12 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.
Claims (19)
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KR20080081950A KR101478335B1 (en) | 2008-08-21 | 2008-08-21 | Ultra violet light emitting diode with a aluminum reflection structure and fabrication method of the same |
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KR20080081950A KR101478335B1 (en) | 2008-08-21 | 2008-08-21 | Ultra violet light emitting diode with a aluminum reflection structure and fabrication method of the same |
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KR1020140111394A Division KR20140116365A (en) | 2014-08-26 | 2014-08-26 | Ultra violet light emitting diode with a aluminum reflection structure and fabrication method of the same |
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Cited By (3)
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US8766300B2 (en) | 2010-07-23 | 2014-07-01 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package comprising the same and lighting system |
WO2015170848A1 (en) * | 2014-05-08 | 2015-11-12 | 엘지이노텍 주식회사 | Light emitting device |
KR20160127365A (en) * | 2015-04-27 | 2016-11-04 | 엘지이노텍 주식회사 | Red light emitting device and lighting system |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4697650B2 (en) * | 2003-08-29 | 2011-06-08 | 信越半導体株式会社 | Light emitting element |
KR100576870B1 (en) * | 2004-08-11 | 2006-05-10 | 삼성전기주식회사 | Nitride semiconductor light emitting diode and method of producing the same |
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2008
- 2008-08-21 KR KR20080081950A patent/KR101478335B1/en active IP Right Grant
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8766300B2 (en) | 2010-07-23 | 2014-07-01 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package comprising the same and lighting system |
US8872212B2 (en) | 2010-07-23 | 2014-10-28 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package comprising the same and lighting system |
US9356195B2 (en) | 2010-07-23 | 2016-05-31 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package comprising the same and lighting system |
US10141478B2 (en) | 2010-07-23 | 2018-11-27 | Lg Innotek Co., Ltd. | Structure of a reflective electrode and an OHMIC layer of a light emitting device |
WO2015170848A1 (en) * | 2014-05-08 | 2015-11-12 | 엘지이노텍 주식회사 | Light emitting device |
US10043947B2 (en) | 2014-05-08 | 2018-08-07 | Lg Innotek Co., Ltd. | Light emitting device |
KR20160127365A (en) * | 2015-04-27 | 2016-11-04 | 엘지이노텍 주식회사 | Red light emitting device and lighting system |
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KR101478335B1 (en) | 2015-01-02 |
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