KR20100023274A

KR20100023274A - Ultra violet light emitting diode with a aluminum reflection structure and fabrication method of the same

Info

Publication number: KR20100023274A
Application number: KR1020080081950A
Authority: KR
Inventors: 문수영; 이규호; 진상기
Original assignee: 서울옵토디바이스주식회사
Priority date: 2008-08-21
Filing date: 2008-08-21
Publication date: 2010-03-04
Also published as: KR101478335B1

Abstract

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are formed in sequence; A reflective structure of Al formed to expose at least a portion of the second conductive semiconductor layer on the second conductive semiconductor layer; An ohmic electrode formed to cover the second conductivity-type semiconductor layer exposed between the reflective structures of Al; The active layer provides an ultraviolet light emitting diode, characterized in that to emit ultraviolet light.

Description

Ultraviolet Light Emitting Diode with Aluminum Reflective Structure and Its Manufacturing Method {ULTRA VIOLET LIGHT EMITTING DIODE WITH A ALUMINUM REFLECTION STRUCTURE AND FABRICATION METHOD OF THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultraviolet light emitting diode and a method of manufacturing the same, and more particularly, to an ultraviolet light emitting diode having an aluminum reflective structure partially patterned and an ohmic electrode and a method of manufacturing the same.

Recently, much attention has been paid to high-brightness white light emitting devices using nitride semiconductors and their economic value is also great. There are three ways to implement a high brightness white light emitting device.

First, a method of implementing white by combining three light emitting devices emitting three primary colors of red, green, and blue. In order to make a single white high luminance light emitting device by this method, a technique of individually controlling light emission characteristics such as temperature life and device life of three color light emitting devices must be preceded, which makes it difficult to implement a white light source.

Second, white is achieved by exciting a yellow phosphor using a blue light emitting device as a light source. When using this method, the luminous efficiency is excellent, the color rendering index (CRI) is low, and the color rendering index changes according to the current density. Therefore, there is a problem in obtaining a white high luminance light emitting device close to sunlight. .

Lastly, using a ultraviolet light emitting diode (UV LED) as a light source to excite the three primary phosphors to create a white. This method is most feasible because it has excellent luminescence properties and color rendering index properties, so that a high brightness white light emitting device close to sunlight can be realized. At this time, the problem of increasing the efficiency of the ultraviolet light emitting element is considered to be the most important problem.

The technology related to the ultraviolet light emitting diode is Korean Patent No. 10-0608929 (Method for manufacturing III-V nitride semiconductor ultraviolet light emitting device, registered on July 27, 2006) and Korean Patent No. 10-0709058 (ultraviolet light emitting device , Registered April 12, 2007).

Two major approaches have been attempted to improve the efficiency of light emitting diodes. The first is to increase the internal quantum efficiency, which is determined by the crystal quality and the epilayer structure, and the second is that the light generated from the light emitting diodes is not emitted to the outside but is lost inside. To increase the light extraction efficiency (light extraction efficiency).

Accordingly, a light emitting diode that emits light in the visible wavelength range employs a reflective film made of a material having high reflectance in order to increase light extraction efficiency. However, in the ultraviolet wavelength band, metal materials other than Al, for example, Ag and Au, have a problem in that they cannot properly function as reflecting films for ultraviolet light due to their deterioration in reflectance and weakness of heat. On the other hand, Al has a high reflectance in the ultraviolet band but the ohmic characteristics are not good, there is an inappropriate problem as an ohmic electrode of the compound semiconductor layer.

The problem to be solved by the present invention is to adopt a reflective structure made of Al having a high reflectance in the ultraviolet wavelength band and to solve the problem of difficult to use Al as an ohmic electrode to provide an ultraviolet light emitting diode having excellent light efficiency in the ultraviolet wavelength band. It is.

According to one aspect of the invention, the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer formed in sequence; A reflective structure of Al formed to expose at least a portion of the second conductive semiconductor layer on the second conductive semiconductor layer; An ohmic electrode formed to cover the second conductivity-type semiconductor layer exposed between the reflective structures of Al; The active layer is provided with an ultraviolet light emitting diode, characterized in that for emitting ultraviolet light.

Preferably, the ohmic electrode may be formed by covering an upper portion of the reflective structure of Al.

Preferably, the ohmic electrode may be formed in a multilayer.

Preferably, the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 1nm to 400nm.

Preferably, the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 200nm to 350nm.

Preferably, the reflective structure may be formed of a matrix structure of islands or a plurality of lines or a mesh structure.

Preferably, the ultraviolet light emitting diode is a conductive bonding substrate formed to cover the ohmic electrode; The method may further include an electrode pad formed on the first conductive semiconductor layer.

Preferably, the ultraviolet light emitting diode further comprises an insulating bonding substrate formed covering the ohmic electrode; Portions of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are etched to expose a portion of the ohmic electrode, and an upper portion of the first conductive semiconductor layer and the exposed ohmic electrodes, respectively. An electrode pad may be formed.

Preferably, in the ultraviolet light emitting diode, a portion of the first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are etched to expose a portion of the first conductive semiconductor layer, and the second conductive semiconductor layer is exposed. An electrode pad may be formed on an upper portion of the substrate and on the exposed first conductive semiconductor layer.

According to another aspect of the invention, the step of depositing Al on the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer formed on the growth substrate; Partially patterning the deposited Al to form a reflective structure of Al to expose the second conductivity type semiconductor layer; Forming an ohmic electrode to cover the second conductivity type semiconductor layer exposed between the reflective structures of Al; The active layer is provided with a UV light emitting diode manufacturing method, characterized in that for emitting ultraviolet light.

Preferably, the ultraviolet light emitting diode manufacturing method comprises the steps of forming a bonding substrate on the ohmic electrodes via a bonding metal; The method may further include separating the growth substrate.

Preferably, the ohmic electrode may be formed to cover an upper portion of the reflective structure of Al.

Preferably, the ohmic electrode may be formed in a multilayer.

The forming of the reflective structure of Al may be performed by etching the deposited Al into a matrix structure of islands or a plurality of lines or a mesh structure using photolithography.

Preferably, the ultraviolet light emitting diode manufacturing method further comprises the step of forming an electrode pad on the first conductivity type semiconductor layer; The bonding substrate may be a conductive substrate.

Preferably, the method of manufacturing an ultraviolet light emitting diode includes etching a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer to expose a portion of the ohmic electrode; Forming electrode pads on each of the first conductive semiconductor layer and the exposed ohmic electrodes; The bonding substrate may be an insulating substrate.

Preferably, the method of manufacturing an ultraviolet light emitting diode may include exposing a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer to expose a portion of the first conductive semiconductor layer; The method may further include forming electrode pads on the second conductive semiconductor layer and the exposed first conductive semiconductor layer, respectively.

According to an embodiment of the present invention, in the ultraviolet light emitting diode emitting light of the ultraviolet wavelength band, a reflective structure made of Al having a mesh structure is formed on the second conductive semiconductor layer (p-type semiconductor layer), By forming the ohmic electrode to cover the reflective structure, light of the ultraviolet wavelength band generated in the active layer is effectively reflected by the reflective structure of Al to be emitted to the outside, and the ohmic characteristics can be satisfied by the ohmic electrode.

In one embodiment of the present invention, by forming a reflective structure of Al to partially expose the p-type semiconductor layer through the pattern etching on the p-type semiconductor layer, the ultraviolet light is lost in the light emitting diode by effectively reflecting light in the ultraviolet wavelength band In addition, the ohmic electrode can be reduced between the reflective structures of Al to effectively improve ohmic characteristics with the p-type semiconductor layer, thereby improving the reliability of the ultraviolet light emitting diode.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a cross-sectional view for describing an ultraviolet light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, compound semiconductor layers including a first conductive semiconductor layer 55, an active layer 57, and a second conductive semiconductor layer 59 are positioned on a bonding substrate 71. In this embodiment, the bonding substrate 71 is a substrate such as Si, GaAs, GaP, AlGaINP, Ge, SiSe, GaN, AlInGaN or InGaN, but Al, Zn, Ag, W, Ti, Ni, Au, Mo It may be a single metal of Pt, Pd, Cu, Cr or Fe or an alloy substrate thereof. On the other hand, the compound semiconductor layers are III-N series compound semiconductor layers, and the first conductivity type and the second conductivity type represent N-type and P-type, or P-type and N-type.

The active layer 57 has a composition of a compound semiconductor layer for emitting ultraviolet light having a peak wavelength of 1 nm to 400 nm. Preferably, the active layer 57 may have a composition of a compound semiconductor layer to emit ultraviolet light having a peak wavelength of 200 nm to 350 nm. The active layer 57 may have a single quantum well structure or a multiple quantum well structure, and has a compound formula of Ga _1-xy In _x Al _y N (0 ≦ x, y ≦ 1, x + y <1). It consists of, it is possible to control the peak wavelength by changing the composition of each compound.

A reflective structure 60 made of Al formed of a matrix structure of islands, a plurality of lines or a mesh structure is formed between the compound semiconductor layers and the bonding substrate 71, and the ohmic electrode 65 covering the reflective structure 60 is formed. ) Is formed.

The reflective structure 60 is formed by stacking Al on the second conductive semiconductor layer 59 and then patterning etching the stacked Al using photolithography technology to partially expose the second conductive semiconductor layer 59. Matrix structure or a plurality of lines or a mesh structure.

An ohmic electrode 65 is deposited between the reflective structure 60 of Al formed of an island shape or a plurality of lines or a mesh structure to form an ohmic electrode 65 in the middle.

The reflective structure 60 is made of Al. Al has a high reflectance in the ultraviolet wavelength band (1 nm to 400 nm). In contrast, Ag or Au has a remarkably low reflectance in the ultraviolet wavelength band.

The ohmic electrode 65 is in ohmic contact with the second conductivity type semiconductor layer 59. The ohmic electrode 65 is preferably distributed over a wide surface of the second conductivity-type semiconductor layer 59 to distribute current, and the ohmic electrode 65 is silver (Ag), platinum (Pt), and palladium (Pd). It may be formed of rhodium (Rh) or nickel (Ni), and may be formed of a metal material including at least one of them. As the ohmic electrodes 65, conductive transparent electrodes ITO, ZnO, SnO, and NiO may be used. The ohmic electrode 65 may be formed of one layer and may be formed of a plurality of layers. For example, platinum (Pt) may be formed as a first layer and silver (Ag) may be formed as a second layer thereon.

The area ratio of the reflective structure 60 and the ohmic electrode 65 may be, for example, 9: 1, but the present invention is not limited thereto and may be determined in consideration of current diffusion characteristics and light reflectance.

Meanwhile, a bonding metal layer 67 may be interposed between the ohmic electrode 65 and the bonding substrate 71, and the bonding metal layer 67 may improve adhesion to the bonding substrate 71 so that the bonding substrate 71 may be ohmic. The separation from the electrode 65 is prevented.

Meanwhile, the electrode pad 73 is positioned on the upper surface of the compound semiconductor layers to face the bonding substrate 71. The electrode pad 73 may be in ohmic contact with the first conductivity type semiconductor layer 55. Alternatively, an ohmic electrode (not shown) may be interposed between the electrode pad 73 and the compound semiconductor layers. In addition, extensions (not shown) extending from the electrode pad 73 may be located on the compound semiconductor layers. Extensions can be employed to spread out the current flowing into the compound semiconductor layers.

2 to 7 are cross-sectional views illustrating a method of manufacturing an ultraviolet light emitting diode according to an embodiment of the present invention.

Referring to FIG. 2, compound semiconductor layers are formed on the sacrificial substrate 51. The sacrificial substrate 51 may be a sapphire substrate, but is not limited thereto and may be another hetero substrate. Meanwhile, the compound semiconductor layers include a first conductivity type semiconductor layer 55, an active layer 57, and a second conductivity type semiconductor layer 59. The compound semiconductor layers are III-N-based compound semiconductor layers, and may be grown by a process such as metal organic chemical vapor deposition (MOCVD) or molecular beam deposition (MBE). The first conductivity type and the second conductivity type represent N-type and P-type, or P-type and N-type.

Meanwhile, the buffer layer 53 may be formed before forming the compound semiconductor layers. The buffer layer 53 is adopted to mitigate lattice mismatch between the sacrificial substrate 51 and the compound semiconductor layers, and may generally be a gallium nitride-based material layer.

Referring to FIG. 3, an Al reflective structure 60 is deposited on the second conductivity type semiconductor layer 59. Al has a very high reflectance in the ultraviolet wavelength band unlike other metals.

Referring to FIG. 4, after depositing Al, partially patterning and etching the reflective structure 60 of Al deposited so that the second conductivity-type semiconductor layer 59 is exposed by using photolithography technology, the open regions 63 are formed. To form. In this case, the reflective structure 60 may be etched into a matrix form of islands or a plurality of lines or mesh structures to form open regions 63.

Referring to FIG. 5, after forming the open regions 63 in the reflective structure 60, the ohmic electrode 65 is formed by covering the reflective structure 60 using a plating or deposition technique. As a result, the ohmic electrode 65 is filled in the regions 63 that are opened in several places of the reflective structure 60. The ohmic electrode 65 includes a material in ohmic contact with the second conductive semiconductor layer 59. When the second conductive semiconductor layer 59 is a P-type semiconductor, the ohmic electrodes 65 may be formed of silver (Ag). ), Platinum (Pt), palladium (Pd), rhodium (Rh) or nickel (Ni). Alternatively, the ohmic electrodes 65 may use conductive transparent electrodes ITO, ZnO, SnO, and NiO. In addition, the ohmic electrodes 65 are generally heat-treated to be in ohmic contact with the second conductive semiconductor layer 59, but the ohmic electrodes 65 are silver (Ag), platinum (Pt), palladium (Pd), and rhodium (Rh). ) Or nickel (Ni), the heat treatment can be omitted.

Referring to FIG. 6, a bonding substrate 71 is formed on the ohmic electrode 65. In the present embodiment, the bonding substrate 71 is a conductive substrate, and is a substrate such as Si, GaAs, GaP, AlGaINP, Ge, SiSe, GaN, AlInGaN or InGaN, but Al, Zn, Ag, W, Ti, Ni, Au, It can be formed by attaching a single metal of Mo, Pt, Pd, Cu, Cr or Fe or an alloy substrate thereof onto the compound semiconductor layers. In this case, the bonding substrate 71 may be bonded onto the ohmic electrode 65 through the bonding metal layer 67. Meanwhile, the bonding substrate 71 may be formed using a plating technique. That is, the conductive bonding substrate 71 may be formed by plating a metal such as Cu or Ni on the ohmic electrode 65.

Referring to FIG. 7, the sacrificial substrate 51 is separated from the compound semiconductor layers. The sacrificial substrate 51 may be separated by laser lift off (LLO) technology or other mechanical or chemical methods. At this time, the buffer layer 53 is also removed to expose the first conductivity-type semiconductor layer 55.

Subsequently, an electrode pad (73 in FIG. 1) is formed on the first conductivity type semiconductor layer 55. The electrode pad 73 is in ohmic contact with the first conductive semiconductor layer 55. In addition, while the electrode pad 73 is formed, extensions (not shown) extending from the electrode pad 73 may be formed together. Thus, the vertical light emitting diode of FIG. 1 is manufactured.

Meanwhile, an ohmic electrode (not shown) may be formed on the first conductive semiconductor layer 55 before forming the electrode pad 73. The ohmic electrode is in ohmic contact with the first conductivity type semiconductor layer 55, and the electrode pad 73 is electrically connected to the ohmic electrode.

8 is a cross-sectional view for describing an ultraviolet light emitting diode according to another embodiment of the present invention.

Referring to FIG. 8, the configuration and operation of the light emitting diode illustrated in FIG. 1 are almost the same. However, in FIG. 1, the ohmic electrode 65 is formed to cover the reflective structure 60, but in FIG. 8, the ohmic electrode ( 65 is formed to fill only the open area of the reflective structure 60.

9 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 9, the structure and operation of the ultraviolet light emitting diode illustrated in FIG. 1 are almost the same. However, in FIG. 1, the bonding substrate 71 is a conductive substrate, but the insulating substrate 81 is used in FIG. 9. Accordingly, power is supplied through the conductive bonding substrate 71 in FIG. 1, but in FIG. 9, a part of the first conductive semiconductor layer 55a, the active layer 57a, and the second conductive semiconductor layer 59a is formed. A portion of the ohmic electrode 65 and the reflective structure 60 is etched to be exposed, and the electrode pads 75 may be formed on the first conductive semiconductor layer 55a and the exposed ohmic electrode 65 and the reflective structure 60. 77) is formed.

10 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention. Referring to FIG. 10, the structure and operation of the ultraviolet light emitting diode illustrated in FIG. 9 are substantially the same, except that the ohmic electrode 65 is formed to cover the reflective structure 60 in FIG. 9, but the ohmic electrode is illustrated in FIG. 10. 65 is formed to fill only the open area of the reflective structure 60.

11 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 11, compound semiconductor layers including a first conductive semiconductor layer 55, an active layer 57, and a second conductive semiconductor layer 59 are positioned on a substrate 51. The substrate 51 may be a sapphire substrate, but is not limited thereto, and may be another hetero substrate. On the other hand, the compound semiconductor layers are III-N series compound semiconductor layers, and the first conductivity type and the second conductivity type represent N-type and P-type, or P-type and N-type. A reflective structure 60 made of Al formed of a matrix structure of islands or a plurality of lines or a mesh structure is formed on the second conductive semiconductor layer 59, and an ohmic electrode 65 covering the reflective structure 60 is formed. Formed.

The reflective structure 60 may be formed as a matrix structure of islands or a plurality of lines or mesh structures by stacking Al on the second conductive semiconductor layer 59 and then patterning etching the stacked Al using photolithography technology. Can be. An ohmic electrode 65 is deposited between the reflective structure 60 of Al formed of an island shape or a plurality of lines or a mesh structure to form an ohmic electrode 65 in the middle.

The reflective structure 60 is made of Al. Al has high reflectance in the ultraviolet wavelength band. In contrast, Ag or Au has a remarkably low reflectance in the ultraviolet wavelength band.

The ohmic electrode 65 is in ohmic contact with the second conductivity type semiconductor layer 59. The ohmic electrode 65 is preferably distributed over a wide surface of the second conductivity-type semiconductor layer 59 to distribute current, and the ohmic electrodes 65 may include platinum (Pt), palladium (Pd), and rhodium (Rh). ) Or nickel (Ni), and may be formed of a metal material including at least one of them. As the ohmic electrodes 65, conductive transparent electrodes ITO, ZnO, SnO, and NiO may be used.

Meanwhile, a portion of the second conductive semiconductor layer 59a, the active layer 57a, and the first conductive semiconductor layer 55a are etched to expose a portion of the first conductive semiconductor layer 55a, and the ohmic electrode 65 And electrode pads 75 and 77 are formed on the exposed first conductive semiconductor layer 55a.

The electrode pad 77 may be in ohmic contact with the first conductivity type semiconductor layer 55. Alternatively, an ohmic electrode (not shown) may be interposed between the electrode pad 77 and the compound semiconductor layers. In addition, extensions (not shown) extending from the electrode pad 77 may be located on the compound semiconductor layers. Extensions can be employed to spread out the current flowing into the compound semiconductor layers.

The ultraviolet light emitted from the active layer 57 is emitted to the outside through the substrate 51, and the ultraviolet light directed upward from the active layer 57 is reflected by the reflective structure 60 and directed toward the substrate 51.

12 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention. Referring to FIG. 12, the structure and operation of the ultraviolet light emitting diode illustrated in FIG. 11 are almost the same, except that the ohmic electrode 65 is formed to cover the reflective structure 60 in FIG. 11, but the ohmic electrode is illustrated in FIG. 11. 65 is formed to fill only the open area of the reflective structure 60.

The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.

10 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.

12 is a cross-sectional view for describing an ultraviolet light emitting diode according to still another embodiment of the present invention.

Claims

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are formed in sequence;

A reflective structure of Al formed to expose at least a portion of the second conductive semiconductor layer on the second conductive semiconductor layer;

An ohmic electrode formed to cover the second conductivity-type semiconductor layer exposed between the reflective structures of Al;

And the active layer emits ultraviolet light.

The method according to claim 1,

And the ohmic electrode covers an upper portion of the reflective structure of Al.

The method according to claim 1,

The ohmic electrode is a ultraviolet light emitting diode, characterized in that formed in multiple layers.

The method according to claim 1,

And the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 1 nm to 400 nm.

The method according to claim 4,

And the active layer has a compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 200 nm to 350 nm.

The method according to claim 1, wherein the reflective structure,

An ultraviolet light emitting diode, characterized in that formed in a matrix structure of islands or a plurality of lines or mesh structure.

The method according to claim 1,

A conductive bonding substrate covering the ohmic electrode;

The ultraviolet light emitting diode of claim 1, further comprising an electrode pad formed on the first conductive semiconductor layer.

The method according to claim 1,

An insulating bonding substrate formed over the ohmic electrode;

Portions of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are etched to expose a portion of the ohmic electrode.

And an electrode pad is formed on the first conductive semiconductor layer and on the exposed ohmic electrodes, respectively.

The method according to claim 1,

A portion of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are etched to expose a portion of the first conductive semiconductor layer,

And an electrode pad formed on the second conductive semiconductor layer and on the exposed first conductive semiconductor layer, respectively.

Depositing Al on the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer which are sequentially formed on the growth substrate;

Partially patterning the deposited Al to form a reflective structure of Al to expose the second conductive semiconductor layer;

Forming an ohmic electrode to cover the second conductivity type semiconductor layer exposed between the reflective structures of Al;

The active layer is ultraviolet light emitting diode manufacturing method, characterized in that for emitting ultraviolet light.

The method according to claim 10,

Forming a bonding substrate on the ohmic electrodes through a bonding metal;

UV light emitting diode manufacturing method further comprising the step of separating the growth substrate.

The method according to claim 10,

And the ohmic electrode is formed to cover an upper portion of the reflective structure of Al.

The method according to claim 10,

The ohmic electrode is a UV light emitting diode manufacturing method, characterized in that formed in multiple layers.

The method of claim 10, wherein forming the reflective structure of Al,

And depositing the deposited Al into a matrix structure of islands or a plurality of lines or a mesh structure using photolithography.

The method according to claim 11,

Forming an electrode pad on the first conductivity type semiconductor layer;

The bonding substrate is a UV light emitting diode manufacturing method, characterized in that the conductive substrate.

The method according to claim 11,

Etching a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer to expose a portion of the ohmic electrode;

Forming electrode pads on each of the first conductive semiconductor layer and the exposed ohmic electrodes;

The bonding substrate is a UV light emitting diode manufacturing method, characterized in that the insulating substrate.

The method according to claim 10,

A portion of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is etched to expose a portion of the first conductivity type semiconductor layer;

And forming electrode pads on the second conductive semiconductor layer and on the exposed first conductive semiconductor layer, respectively.

The method according to claim 10,

The active layer has a compound semiconductor composition characterized in that the compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 1nm to 400nm.

The method according to claim 10,

The active layer has a compound semiconductor composition characterized in that the compound semiconductor composition configured to emit ultraviolet light having a peak wavelength of 200nm to 350nm.