KR20100012192A - Chemical vapor deposition apparatus for manufacturing thin-film solar cells - Google Patents

Abstract

PURPOSE: A chemical vapor deposition apparatus for manufacturing thin-film solar cells is provided to reduce the tact time by preventing the waiting time for deposition process. CONSTITUTION: Load lock chambers(100a,100b) supply a substrate of deposition process object. The deposited substrate is drawn out. A transfer module chamber is connected to the load lock chamber. A handling robot(210) is formed in the inside. A plurality of process module chambers is connected to the transfer module chamber. The deposition process is performed.

Description

Chemical vapor deposition apparatus for manufacturing thin-film solar cells

The present invention relates to a chemical vapor deposition apparatus for manufacturing a thin film solar cell, and more particularly, to reduce the tact time by preventing an increase in unnecessary waiting time for a deposition process as before while having a simple and simple structure. In addition, the present invention relates to a chemical vapor deposition apparatus for manufacturing a thin film solar cell that can proceed with the deposition process for a plurality of substrates at the same time to improve the deposition efficiency and productivity than conventional.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors. Such solar cells are classified into monocrystalline silicon solar cells, polycrystalline silicon solar cells, thin-film solar cells, and the like according to their types.

The thin film solar cell is manufactured in the form of a thin film, and its efficiency is lower than that of a single crystal silicon solar cell. However, the manufacturing cost is low, the large area is possible, and the surface is irregular, or it is easy to use in the difficult place. In addition, depending on the type of substrate to be deposited may be transported or stored in a roll like a floor.

Such thin film solar cells are manufactured into products through a number of processes similar to semiconductor processes.

Among many processes, there is a deposition process for depositing a thin film-like deposition film on the surface of the substrate, which is mainly carried out through a chemical vapor deposition apparatus (PECVD) for manufacturing a thin film solar cell using plasma.

In the chemical vapor deposition apparatus for manufacturing thin-film solar cells, p-doped a-Si, i-film (a-Si / μc-Si), and n-film (n-doped a-Si), which are kinds of deposition films, are formed on the surface of a substrate. ) Is deposited in sequence or in any order. That is, the chemical vapor deposition apparatus for manufacturing a thin film solar cell is a device for performing a process of depositing a deposition film having a thickness of several to several tens of micrometers (μm) on a glass substrate having a thickness of about 2 to 5 mm.

For reference, all of the p film, the i film, and the n film may be deposited on the surface of the substrate, but this is not necessarily the case. In addition, other deposition films other than the p film, the i film, and the n film may be deposited.

Referring to the case where the p film and the i film is deposited on the surface of the substrate, the conventional chemical vapor deposition apparatus for manufacturing a thin film solar cell in which the deposition process of the p film and the i film is performed, the substrate in which the deposition target substrate is inserted or the deposition is completed The extracted load lock chamber, a transfer module chamber connected to the load lock chamber and a substrate handling robot provided therein, and two first and second processes connected to one side of the transfer module chamber to perform a substantial deposition process. A module chamber.

With this configuration, when the substrate handling robot in the transfer module chamber grasps the substrate to be deposited from the load lock chamber and supplies it to the first process module chamber, a p film is deposited on the substrate surface in the first process module chamber.

When the deposition of the p film is completed, the substrate handling robot removes the substrate in the first process module chamber and transfers it to the second process module chamber so that the deposition of the i film on the p film through the second process module chamber proceeds. At this time, a new substrate is re-introduced into the empty first process module chamber to perform the deposition process of the p film.

On the other hand, as described above, the deposition films (p film, i film, n film) deposited on the surface of the substrate, depending on the type of solar cell or the manufacturer's requirements, the thickness of the deposited film, the arrangement order of the deposited film, and further the deposited film Since the number of layers and the like may all be different, an appropriate design thereof is required when manufacturing a chemical vapor deposition apparatus for manufacturing a thin film solar cell.

However, for example, when the p film, the i film, and the n film are all deposited on the surface of the substrate, when the deposition time for the deposition of the i film takes much more than the deposition time for the deposition of the p film or the n film, In the chemical vapor deposition apparatus for manufacturing a thin film solar cell, the process module chamber for p film deposition or the process module chamber for n film deposition must wait until the deposition of the i film is completed even though the deposition process of the p film and the n film is completed. In general, a problem of increasing tact time occurs.

However, in order to solve this problem, in the case where a plurality of process chambers are provided, and the deposition process for all of the p film, the i film, and the n film is to be performed in one process module chamber, the contamination problem or the substrate inside the chamber is required. Due to the problem of contamination of the phase or the setting of a device for changing the deposition film, etc., it takes more time, so that there is little effect of reducing the tact time. Therefore, an appropriate countermeasure may be required.

It is an object of the present invention to reduce the tact time by preventing the increase of unnecessary waiting time for the deposition process, while having a simple and simple structure, and at the same time, the deposition process for a plurality of substrates can be performed. It is to provide a chemical vapor deposition apparatus for manufacturing a thin film solar cell that can improve the deposition efficiency and productivity than conventional.

The object is, according to the present invention, a transfer module chamber provided with a substrate handling robot for handling the substrate therein; At least one load lock chamber connected to one side of the transfer module chamber to allow the substrate to enter and exit the chamber; And a plurality of process module chambers connected to the other side of the transfer module chamber to perform a substantial deposition process on the substrate, wherein the plurality of process module chambers are deposited among a plurality of deposition films to be deposited on the surface of the substrate. The transfer module chamber has a relatively larger number of process module chambers for the deposition process of the deposition film, which takes a relatively longer time than the number of process module chambers for the deposition process of the deposition film, which requires a relatively short deposition time. It is achieved by a chemical vapor deposition apparatus for manufacturing a thin film solar cell, characterized in that connected with.

Here, the plurality of process module chambers may be disposed adjacent to the transfer module chamber so as to be arranged along the circumferential direction of the transfer module chamber and connected to the transfer module chamber.

The transfer module chamber may have a polygonal structure in planar projection, and the at least one load lock chamber and the plurality of process module chambers may be disposed adjacent to each side of the transfer module chamber having a polygonal structure, Can be connected.

The at least one load lock chamber may include an incoming load lock chamber into which a substrate to be deposited is introduced; And a takeout load lock chamber through which the substrate on which deposition is completed is taken out.

The inlet load lock chamber and the takeout load lock chamber may be disposed adjacent to each other and connected to the transfer module chamber.

Among the plurality of process module chambers, a process module chamber for depositing a deposition film first deposited on a surface of the substrate is disposed adjacent to the incoming load lock chamber, and a deposition process of a deposition film finally deposited on a surface of the substrate. The process module chamber may be disposed adjacent to the takeout load lock chamber.

The transfer module chamber may have an octagonal structure in planar projection, the deposition film may be three types, and the process module for the deposition process of the deposition film that takes the most deposition time among the three types of deposition films. The number of chambers may be four, and the number of process module chambers for the remaining two kinds of deposition films may be one.

Each of the plurality of process module chambers may include a plurality of unit chambers so that deposition processes for a plurality of substrates may be simultaneously performed.

The plurality of unit chambers may be arranged in multiple layers along a height direction in one process module chamber.

Each of the plurality of unit chambers includes: a susceptor on which the substrate is loaded; And an electrode provided on the susceptor to release predetermined reactive gas ions to the surface of the substrate loaded on the susceptor so that the deposition film is deposited on the surface of the substrate. Each of the process module chambers may include: a gas ion common supply unit for supplying the reactive gas ions to each of the plurality of unit chambers provided therein; A vacuum pressure common pump for commonly setting and unsetting a vacuum pressure for each of the plurality of unit chambers; And a vacuum pump that sets and releases the vacuum pressure in the process module chamber.

The deposition film may be a p film (p-doped a-Si), i film (a-Si / μc-Si) and n film (n-doped a-Si), the substrate is a glass (glass) substrate Can be.

According to the present invention, it is possible to reduce the tact time by preventing the increase of unnecessary waiting time for the deposition process, while having a simple and simple structure, and at the same time, the deposition process for a plurality of substrates can be performed. It is possible to improve the deposition efficiency and productivity than conventional.

In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the practice of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the accompanying drawings.

Hereinafter, the present invention will be described in detail by explaining preferred embodiments of the present invention with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

1 is a schematic configuration diagram of a chemical vapor deposition apparatus for manufacturing a thin film solar cell according to an embodiment of the present invention, FIG. 2 is a schematic configuration diagram of a process module chamber, and FIG. 3 is a detailed structural diagram of FIG. 2.

As shown in these drawings, the chemical vapor deposition apparatus for manufacturing a thin film solar cell according to the present embodiment includes load lock chambers 100a and 100b into which a substrate of a deposition process is introduced or a substrate on which deposition is completed is taken out, and a load lock A transfer module chamber 200 connected to the chambers 100a and 100b and having a substrate handling robot 210 therein, and a plurality of process module chambers 300a connected to the transfer module chamber 200 to perform a substantial deposition process. And 300b and 300c.

In the chemical vapor deposition apparatus for manufacturing a thin film solar cell of the present embodiment, the transfer module chamber 200 has an octagonal structure in planar projection, and two load lock chambers 100a and 100b and six processes on eight sides. The module chambers 300a, 300b, and 300c are arranged concentrically and have a structure connected to the transfer module chamber 200.

However, the scope of the present invention need not be limited thereto. That is, if the load lock chamber (100a, 100b) and the process module chamber (300a, 300b, 300c) has a structure that is connected to the transfer module chamber 200, it is sufficient, the transfer module chamber 200 is of an octagonal shape Apart from the structure, it may have various polygonal structures.

However, hereinafter, referring to FIG. 1, two load lock chambers 100a and 100b and six process module chambers 300a, 300b and 300c are connected to the transfer module chamber 200 having an octagonal structure in detail. Let's explain.

First, the two load lock chambers 100a and 100b are divided into an inlet load lock chamber 100a through which a substrate to be deposited is introduced and a takeout load lock chamber 100b through which a substrate on which deposition is completed is taken out.

In this embodiment, the incoming load lock chamber 100a and the extraction load lock chamber 100b are connected to the transfer module chamber 200 so as to be adjacent to each other. This is one way to reduce the tact time by reducing the operating distance of the substrate handling robot 210 as much as possible, but the present invention is not limited thereto.

It expands with respect to the incoming load lock chamber 100a and the extraction load lock chamber 100b. In order to proceed with the deposition process of the substrate through the process module chambers 300a, 300b and 300c, the substrate handling robot 210 transfers the substrate to be deposited into the corresponding process module chambers 300a, 300b and 300c. Since it is difficult to directly enter the substrate in the atmospheric pressure into the process module chambers 300a, 300b and 300c of the high temperature and low pressure, the process module chamber before transferring the substrate to the corresponding process module chambers 300a, 300b and 300c. It is necessary to create the same environment as (300a, 300b, 300c). For this purpose, the inlet load lock chamber 100a is provided.

In other words, when the substrate to be deposited is introduced from the outside by a robot (not shown) outside the apparatus, the incoming load lock chamber 100a has a temperature substantially the same as that of the process module chambers 300a, 300b, and 300c. It plays a role in composition with pressure. As described above, the substrate in the inlet load lock chamber 100a having substantially the same environment as the process module chambers 300a, 300b, and 300c is handled by the substrate handling robot 210 provided in the transfer module chamber 200. After the transfer to the process module chambers 300a, 300b, and 300c, the deposition process is performed there.

On the contrary, the substrate in which the deposition process is completed in the process module chambers 300a, 300b, and 300c must be handled by the substrate handling robot 210 and drawn out of the apparatus, in which case the temperature and pressure are substantially the same as the outside. The takeout load lock chamber 100b is provided because the substrate is to be taken out while maintaining.

As a result, the incoming load lock chamber 100a and the extraction load lock chamber 100b form an access passage to the substrate, but the state of the substrate is based on the internal and external environmental conditions of the chemical vapor deposition apparatus for manufacturing a thin film solar cell. Is arranged to coordinate.

However, since the scope of the present invention is not limited thereto, the inlet load lock chamber 100a and the takeout load lock chamber 100b are not necessarily provided separately. In other words, only one load lock chamber (not shown) may be provided, and all of the substrates may be allowed through the load lock chamber.

However, when the inlet load lock chamber 100a and the takeout load lock chamber 100b are separately provided as in the present embodiment, loading or waiting time may be reduced according to the entrance and exit of the substrate, thereby reducing tact time. It can be expected to be effective, and therefore must help to increase productivity.

Although the load lock chambers 100a and 100b are not shown in detail, the load lock chambers 100a and 100b may accommodate a plurality of substrates in a height direction thereof in order to simultaneously proceed with a deposition process for a plurality of substrates. A multistage unit chamber (not shown) is provided.

The load lock chambers 100a and 100b may include, for example, 20 unit chambers to accommodate 20 substrates. However, the scope of the present invention need not be limited to the number thereof.

However, when 20 substrates are accommodated in the load lock chambers 100a and 100b, in particular, the incoming load lock chamber 100a, the substrate handling robot 210 in the transfer module chamber 200 grips 20 substrates at once. After handling, it may be transferred to the process module chambers 300a, 300b, and 300c, respectively. In the process module chambers 300a, 300b, and 300c, the deposition process for 20 substrates may be performed at the same time. If you configure the device together, you can expect a great productivity effect.

Of course, such a structure is not impossible at all, but if the deposition process for 20 substrates is performed in one process module chamber 300a, 300b, or 300c, the process module chambers 300a, 300b, and 300c may be processed as shown in FIGS. Each of the 20 unit chambers 310a to 310e must be provided in each case. In this case, the height and scale of the apparatus including the process module chambers 300a, 300b, and 300c may be excessively high or huge, which is practically desirable. But not.

Therefore, as will be described later, each of the process module chambers 300a, 300b, and 300c may be manufactured to such a scale that the deposition process for the substrate of about 5 sheets (or more than 10 sheets) may be simultaneously performed. In this case, the substrate handling robot 210 may grip the five substrates among the 20 substrates accommodated in the inlet load lock chamber 100a to handle the process module chambers 300a, 300b, and 300c.

As such, the substrate handling robot 210 grips five substrates among the 20 substrates accommodated in the inlet load lock chamber 100a and transfers the five substrates to the process module chambers 300a, 300b, and 300c, or conversely, the process module chambers 300a and 300b. When the five substrates of which deposition has been completed from 300c are transferred to the take-off load lock chamber 100b, the relative height difference between the substrate handling position of the substrate handling robot 210 and the unit chambers in the load lock chambers 100a and 100b is different. Since it should be changed from time to time, the substrate handling robot 210 is to be moved up or down, or the unit chambers in the load lock chamber (100a, 100b) will have to be moved up and down.

If the substrate handling robot 210 is to be moved up and down like the former, since the position control of the substrate handling robot 210 is not easy, the unit chambers in the load lock chambers 100a and 100b are moved up and down like the latter. It would be desirable to implement it. This structure can be easily implemented by applying the elevator structure for the lifting operation of the substrate in the load lock chamber (100a, 100b), so the drawings and description thereof will be omitted.

The transfer module chamber 200 is a chamber connecting the six process module chambers 300a, 300b, and 300c and the two load lock chambers 100a and 100b. The transfer module chamber 200 has an octagonal structure in planar projection as shown.

As described above, the six transfer module chambers 300a, 300b, and 300c and two load lock chambers 100a and 100b, for example, simultaneously handle five substrates inside the transfer module chamber 200. Substrate handling robot 210 is provided, and also because the substrate handling robot 210 inside the transfer module chamber 200, the width of the width / length of 1.5 meters or so, so-called substrate called the fifth generation should be transferred The module chamber 200 is provided in a huge structure.

Meanwhile, the six process module chambers 300a, 300b, and 300c perform a substantial deposition process on the substrate in an environment of high temperature and low pressure.

That is, the p film (p-doped a-Si), i film (a-Si / μc-Si), and n film (n-doped a) are formed on the surface of the substrate through the six process module chambers 300a, 300b, and 300c. A deposited film of -Si) can be deposited.

Of course, not all of the p film, the i film, and the n film need to be deposited on the surface of the substrate, and in some cases, any one of the p film, the i film, and the n film may be excluded. In addition, other deposition films other than the p film, the i film, and the n film may be deposited on the surface of the substrate, in which case at least one of the six process module chambers 300a, 300b, and 300c shown in FIG. 1 is selected. What is necessary is just to provide the reactive gas ion for vapor deposition of the said vapor deposition film.

In the following description, it is assumed that the p film, the i film, and the n film are all deposited on the surface of the substrate, and in order, and the deposition time of the i film among the p film, the i film, and the n film is much longer than that of the p film and the n film. Let's explain. Of course, the deposition film arrangement order and deposition time of the p film, the i film, and the n film may be changed in some cases.

As described above, although the deposition time of the i film is much longer than that of the p film and the n film in depositing the p film, the i film, and the n film on the surface of the substrate, the process module chamber for p film deposition as in the prior art ( 300a), if the i film deposition process module chamber 300b and the n film deposition process module chamber 300c are provided in the transfer module chamber 200 in the same number, especially one by one, even though the deposition process of the p film and the n film is completed, Nevertheless, since the process film chamber 300a for p film deposition and the process module chamber 300c for film deposition n have to wait until the deposition process of the i film is completed, the overall tact time increases and productivity is reduced. It must be.

Accordingly, in the present embodiment, a process module chamber for i film deposition for a deposition process of an i film, which is a deposition film that requires a relatively high deposition time among a plurality of deposition films (p film, i film, n film) to be deposited on the surface of the substrate. The number of (300b) of the p film deposition process module chamber 300a and the n film deposition process module chamber 300c for the deposition process of the deposition film (p film, n film) that takes a relatively short deposition time By providing a relatively larger number than the transfer module chamber 200 to solve the conventional problems.

That is, in the present embodiment, as shown in FIG. 1, of the six process module chambers 300a, 300b, and 300c, the p film deposition process module chamber 300a and the n film deposition process module chamber 300c. 1 is provided one by one, and four process module chambers 300b for i film deposition are provided.

As such, when the number of the i film deposition process module chamber 300b is increased to the number of the p film deposition process module chamber 300a and the n film deposition process module chamber 300c, the deposition process of the p film and the n film as in the prior art is performed. Although this is completed, it is possible to reduce unnecessary time for the p film deposition process module chamber 300a and the n film deposition process module chamber 300c to wait until the i film deposition process is completed.

Of course, the scope of the present invention need not be limited thereto. For example, even in the case of the p film and the n film, if the deposition time of the n film should be longer than that of the p film, the process module chamber for n film deposition is reduced instead of reducing the number of i film deposition process module chambers 300b by one. An appropriate selection may be made, such as increasing the number of (300c) one more. This change can be equally applied to other deposited films other than the p film, the i film, and the n film, and since the application process is not difficult, there is an advantage that can be easily implemented according to the site situation.

Meanwhile, as described above, the six process module chambers 300a, 300b, and 300c are arranged along the circumferential direction of the transfer module chamber 200. This is a method for reducing the tact time by shortening the operation path of the substrate handling robot 210 provided in the transfer module chamber 200.

As described above, one p film deposition process module chamber 300a, four i film deposition process module chambers 300b, and one n film deposition process module chambers 300 may be disposed along the circumferential direction of the transfer module chamber 200. In the arrangement 300c, in this embodiment, the p film deposition process module chamber 300a is adjacent to the incoming load lock chamber 100a, and the n film deposition process module chamber 300c is a takeout load lock chamber ( Adjacent to 100b). This is because the p film, the i film, and the n film are deposited on the substrate in this order. Thus, the inlet load lock chamber 100a and the process module chamber 300a for p film deposition are disposed close to each other, and the takeout load lock chamber 100b and It is intended to shorten the tact time by further shortening the transfer time of the substrate by arranging the process module chamber 300c for n film deposition in close proximity.

Meanwhile, as mentioned earlier, each of the six process module chambers 300a, 300b, and 300c includes five unit chambers 310a to 310e so that deposition processes for five substrates may be simultaneously performed therein. do.

The internal structure of the process module chamber 300a for p film deposition will be described with reference to FIGS. 2 and 3 as follows.

Although the internal structures of the i film deposition process module chamber 300b and the n film deposition process module chamber 300c are not shown separately, the internal structures of the p film deposition process module chamber 300a of FIGS. 2 and 3 are not shown. To be considered equal.

As illustrated in FIGS. 2 and 3, five unit chambers 310a to 310e are multi-layered in the p film deposition process module chamber 300a along the height direction of the p film deposition process module chamber 300a. Are arranged. For convenience of installation and maintenance, the spacing between the five unit chambers 310a to 310e is preferably substantially the same.

Each of the five unit chambers 310a to 310e includes a susceptor 311 on which a substrate is loaded and a susceptor 311 provided on an upper part of the susceptor 311 so that a deposition film of a p film may be deposited on a surface of the substrate. And an electrode 312 that releases reactive gas ions for p film deposition to the surface of the substrate loaded thereon.

Of course, in addition to the susceptor 311 and the electrode 312 in each of the unit chambers 310a to 310e, a lift pin and an electrode 312 for loading and unloading the substrate onto the susceptor 311. Suspension support means (not shown) for supporting the, and sag prevention means (not shown) for preventing the sag of the electrode 312, etc. may be further provided, for which reference is made to the prior art description, and will be omitted here. .

The p-film deposition process module chamber 300a having five unit chambers 310a to 310e therein is a gas ion that commonly supplies reactive gas ions for p-film deposition to each of the five unit chambers 310a to 310e. A common supply unit 320, a vacuum pressure common pump 330 for setting and releasing a vacuum pressure for each of the five unit chambers 310a to 310e in common, and a vacuum in the process module chamber 300a for p film deposition. There is further provided a vacuum pump 340 for setting and unsetting the pneumatic pressure.

In the line connecting the gas ion common supply unit 320 and the five unit chambers 310a to 310e, there are intermittent valves 321a to 321e for controlling the line, and the vacuum common pump 330 and five units are provided. In the line connecting the chambers 310a to 310e, there are intermittent valves 331a to 331e for controlling the lines. As a result, if a failure occurs in any one of the five unit chambers 310a to 310e, the intermittent valves 321a to 321e and 331a to 331e corresponding to the unit chambers may be disconnected and the deposition process may continue through the remaining unit chambers. As a result, there is an additional advantage to increase the utilization of the device. The extension lines from the gas ion common supply unit 320, the vacuum pressure common pump 330, and the vacuum pressure pump 340 are further provided with switchgear 320a, 330a, and 340a for opening and closing the corresponding lines, respectively.

By such a configuration, a method of forming a deposition film on a substrate as one process for manufacturing a thin film solar cell is as follows.

First, an external robot (not shown) draws 20 substrates to be deposited into the incoming load lock chamber 100a. Subsequently, the substrate handling robot 210 in the transfer module chamber 200 holds, for example, five substrates from the load lock chamber 100a, so that the five unit chambers 310a to 310e in the process module chamber 300a for p film deposition. To each of them.

When five substrates are introduced into the five unit chambers 310a to 310e in the process module chamber 300a for p film deposition and loaded on the susceptor 311, the p film deposition from the gas ion common supply 321 is performed. Reactive gas ions are supplied and supplied to the surface of the substrate through the corresponding electrode 312 so that the p film as the first deposition film is deposited on the substrate.

When the deposition of the p film, which has a relatively high deposition time, is completed through the process film chamber 300a for p film deposition, the substrate handling robot 210 may complete the deposition of the p film from the process module chamber 300a for p film deposition. The film is taken out and transferred to one of the i film deposition process module chambers 300b, and in the i film deposition process module chamber 300b, the i film is deposited on the p film by the same method as the above method.

Meanwhile, at this time, five new substrates are introduced into the empty p film deposition process module chamber 300a from the incoming load lock chamber 100a to proceed with the deposition process of the p film, and the deposition process of the p film is performed. When complete, the process is transferred to another process film chamber 300b for i film deposition to allow the i film to be deposited on the p film.

As described above, the above process is repeated because the deposition time for the deposition of the i film is much longer than the deposition time for the deposition of the p film.

Firstly, the substrate which is introduced into the i film deposition process module chamber 300b and the i film is deposited on the p film is handled by the substrate handling robot 210 to the n film deposition process module chamber 300c. Transferred and causes an n film to be deposited on the i film in the n film deposition process module chamber 300c.

Since the deposition time for the deposition of the n film is also fast, the substrate in which the deposition of the n film is finally taken out is quickly taken out through the take-out load lock chamber 100b, and the process module chamber for n film deposition that is empty in the process of taking out the substrate ( 300c), the second process is introduced into the i film deposition process module chamber 300b, and the substrate on which the i film is deposited on the p film is transferred again to repeat the same process in which the n film is deposited.

As described above, according to the present exemplary embodiment in which a p film, an i film, and an n film are deposited on a substrate, and the number of process module chambers 300b for i film deposition, which has a relatively long deposition time, is increased and arranged, a simple and simple structure is obtained. It is possible to reduce the tact time by preventing the increase of unnecessary waiting time for the deposition process as in the prior art, and furthermore, the deposition process for a plurality of substrates can be performed at the same time, so that the deposition efficiency and productivity can be improved. do.

In addition, along the circumferential direction of the transfer module chamber 200 having a polygonal structure, the process module chambers 300a, 300b, and 300c are arranged concentrically, including the lead-in and take-off load lock chambers 100a and 100b. The load lock chambers 100a and 100b are provided adjacent to each other, the process module chamber 300a for p film deposition adjacent to (closely) the incoming load lock chamber 100a and adjacent to the take-off load lock chamber 100b. Therefore, as the n film deposition process module chamber 300c is disposed, it is possible to further reduce unnecessary time, thereby reducing the tact time, thereby further improving productivity.

As described above, the present invention is not limited to the described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the present invention, which will be apparent to those skilled in the art. Therefore, such modifications or variations will have to be belong to the claims of the present invention.

1 is a schematic configuration diagram of a chemical vapor deposition apparatus for manufacturing a thin film solar cell according to an embodiment of the present invention.

2 is a schematic diagram of a process module chamber.

3 is a detailed structural diagram of FIG. 2.

* Explanation of symbols for the main parts of the drawings

100a, 100b: load lock chamber 200: transfer module chamber

210: substrate handling robot 300a, 300b, 300c: process module chamber

310a ~ 310e: unit chamber 310: susceptor

312 electrode 320 gas ion common supply

330: vacuum common pump 340: vacuum pump

Claims (11)

A transfer module chamber in which a substrate handling robot for handling a substrate is provided; At least one load lock chamber connected to one side of the transfer module chamber to allow the substrate to enter and exit the chamber; And A plurality of process module chambers connected to the other side of the transfer module chamber to perform a substantial deposition process on the substrate, The plurality of process module chambers may include a deposition film in which a number of process module chambers for a deposition process of a deposition film, which requires a relatively long deposition time, among a plurality of deposition films to be deposited on a surface of the substrate, requires a relatively short deposition time. The chemical vapor deposition apparatus for manufacturing a thin film solar cell, characterized in that a relatively larger number than the number of process module chambers for the deposition process is connected to the transfer module chamber. The method of claim 1, And the plurality of process module chambers are disposed adjacent to the transfer module chamber to be arranged along the circumferential direction of the transfer module chamber and connected to the transfer module chamber. The method of claim 3, The transfer module chamber has a polygonal structure in planar projection, The at least one load lock chamber and the plurality of process module chambers are disposed adjacent to each side of the transfer module chamber of a polygonal structure and connected with the transfer module chamber. The method of claim 3, The at least one load lock chamber, An incoming load lock chamber into which a substrate to be deposited is introduced; And A chemical vapor deposition apparatus for manufacturing a thin film solar cell, comprising: a takeout load lock chamber through which a substrate on which deposition is completed is taken out. The method of claim 4, wherein The incoming load lock chamber and the take-out load lock chamber is disposed adjacent to each other and connected to the transfer module chamber, the chemical vapor deposition apparatus for manufacturing a thin film solar cell. The method of claim 5, Among the plurality of process module chambers, a process module chamber for depositing a deposition film first deposited on a surface of the substrate is disposed adjacent to the incoming load lock chamber, and a deposition process of a deposition film finally deposited on a surface of the substrate. Process module chamber for the chemical vapor deposition apparatus for manufacturing a thin film solar cell, characterized in that disposed adjacent to the take-out load lock chamber. The method of claim 6, The transfer module chamber has an octagonal structure in planar projection, There are three kinds of vapor deposition film, The number of the process module chambers for the deposition process of the deposition film that takes the most deposition time among the three kinds of deposition films is four, Chemical vapor deposition apparatus for manufacturing a thin film solar cell, characterized in that the number of the process module chamber for the deposition process of the remaining two kinds of deposition film, respectively one. The method of claim 1, Each of the plurality of process module chambers includes a plurality of unit chambers so that deposition processes for a plurality of substrates may be simultaneously performed. The method of claim 8, The plurality of unit chambers are chemical vapor deposition apparatus for manufacturing a thin film solar cell, characterized in that arranged in a multi-layer along the height direction in one process module chamber. The method of claim 9, Each of the plurality of unit chambers, A susceptor on which the substrate is loaded; And An electrode provided on the susceptor to release predetermined reactive gas ions to the surface of the substrate loaded on the susceptor so that the deposition film is deposited on the surface of the substrate, Each of the plurality of process module chambers, A gas ion common supply unit which commonly supplies the reactive gas ions to each of the plurality of unit chambers provided therein; A vacuum pressure common pump for commonly setting and unsetting a vacuum pressure for each of the plurality of unit chambers; And And a vacuum pump for setting and releasing the vacuum pressure in the process module chamber. The method of claim 1, The deposition film is a p film (p-doped a-Si), i film (a-Si / μc-Si) and n film (n-doped a-Si), The substrate is a chemical vapor deposition apparatus for manufacturing a thin film solar cell, characterized in that the glass (glass) substrate.

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