KR20100004760A - Mocvd apparatus - Google Patents

Abstract

PURPOSE: An MOCVD apparatus is provided to prevent the contamination of a substrate by changing the arrangement position of a susceptor inside a chamber. CONSTITUTION: In a MOCVD apparatus, a chamber(10) comprises the lower part of a reaction unit in which a reaction gas flows into. A susceptor(20) is included on the reaction unit inside the chamber. The susceptor receives at least one of substrate and exposes it to the reaction unit(60). The reaction gas is flowed into a gas inlet(30) flow from the reaction unit. A gas outlet(40) is arranged at the center of the reaction unit and discharges the gas after reaction.

Description

Chemical Vapor Deposition Apparatus {MOCVD Apparatus}

The present invention relates to an apparatus for forming a high temperature chemical vapor deposition on a substrate, and more particularly, by changing the position of the susceptor in the chamber, it is possible to prevent impurities from falling off due to parasitic deposition to contaminate the substrate. A chemical vapor deposition apparatus.

As high efficiency LEDs are increasingly used in various industries, metal organic chemical vapor deposition (MOCVD) equipment that can be produced in large quantities without degrading quality or performance is required. Accordingly, by increasing the size of the MOCVD reactor, it is possible to grow dozens of existing 2-inch wafers at the same time or to grow a large-diameter (4, 6, 8, 12-inch) wafer. Chamber).

In chemical vapor deposition, a wafer is deposited on a susceptor in a chamber and a reaction gas is supplied to form a thin film on the surface of the wafer. It must be sprayed evenly over each part of the wafer.

In the chemical vapor deposition apparatus according to the prior art, the gas is introduced from the gas inlet provided near the center of the chamber so that the gas flows toward the outer periphery of the susceptor. Therefore, since the gas density in the center of the chamber is higher than that of the surroundings, especially when the reaction pressure (growth pressure) is increased, a gaseous reaction occurs violently in the center of the chamber, and thus raw material gas is not sufficiently supplied to the surroundings.

In addition, a susceptor is disposed on the lower surface side of the chamber and is seated on the upper surface of the susceptor so that the substrate faces up, opening the chamber to replace the substrate after the deposition process is complete. In this case, particles due to parasitic deposition, which are attached to the inner surface of the chamber due to vibration or shock, fall and contaminate the susceptor and the substrate as well as the inner surface of the chamber.

If the impurities on the susceptor are not completely removed, the adhesion between the substrate and the susceptor may not be maintained, and the temperature distribution of the substrate may not be uniform, thereby causing composition unevenness (reduced product ratio).

Accordingly, the present invention has been made to solve the above-mentioned problems of the prior art, by changing the arrangement position of the substrate to prevent the impurities from falling off by parasitic deposition to contaminate the substrate, easy to maintain the device Of course, it is an object of the present invention to provide a chemical vapor deposition apparatus capable of achieving a good quality vapor deposition without a vigorous gas phase reaction in the chamber.

As a technical configuration for achieving the above object, the chemical vapor deposition apparatus of the present invention comprises a chamber provided with a reaction flow path for the reaction gas flow in the lower portion; A susceptor provided on the reaction flow passage in the chamber, the susceptor receiving at least one substrate at a lower end thereof to expose the reaction flow passage; A gas introduction part provided to introduce the reaction gas into the reaction flow path; And a gas discharge part provided at the center of the reaction flow path part to exhaust the gas after the reaction.

Preferably, the apparatus further includes heating means provided on the susceptor to provide heat to the substrate.

Preferably, the chamber includes an upper passage for receiving the susceptor and a lower passage for forming the reaction flow passage portion.

More preferably, the upper portion is provided to be opened and closed with respect to the lower portion.

More preferably, the upper portion of the upper portion, the body portion to form a space of a predetermined size therein, and the lower portion to form the lower portion, the flange portion to selectively contact with the lower portion in accordance with the opening and closing of the upper portion It includes.

More preferably, the apparatus further includes a driving device fixed to the upper road to drive the susceptor, and selectively coupled to the susceptor according to opening and closing of the upper road.

More preferably, the drive device includes a drive motor fixed to the upper end of the upper portion, and a rotating shaft rotated by the drive motor, the susceptor further comprises a coupling portion for selectively coupling with the rotating shaft on the top do.

Preferably, the apparatus further includes a support member provided in the chamber to support the susceptor.

Preferably, it further comprises at least one fixing clip provided on one side of the lower end of the susceptor to accommodate and support the substrate.

Preferably, the gas introduction portion is provided around the side end portion of the chamber to communicate with at least one reservoir for storing a predetermined gas introduced from the outside, the reservoir and the reaction flow passage communicating with the gas stored in the reservoir It includes a spray nozzle to be injected into the flow path portion.

More preferably, the gas introduction portion includes a first reservoir for storing the first gas introduced from the outside, and a first injection nozzle for communicating the first reservoir with one side of the reaction flow path to inject the first gas. A first gas introducing unit; And a second reservoir disposed below the first gas introducing unit, for storing the second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path to inject the second gas. And a second gas introduction part including an injection nozzle.

More preferably, the gas introduction portion includes a first reservoir for storing the first gas introduced from the outside, and a first injection nozzle for communicating the first reservoir with one side of the reaction flow path to inject the first gas. A first gas introducing unit; A second reservoir disposed under the first gas introducing unit and configured to communicate a second reservoir storing a second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path to inject the second gas; A second gas introducing part including an injection nozzle; And a third reservoir disposed below the second gas introducing unit, for storing the third gas introduced from the outside, and communicating the third reservoir with the other side of the reaction flow path to inject the third gas. And a third gas introduction part including an injection nozzle.

More preferably, the gas introduction portion includes a first reservoir for storing the first gas introduced from the outside, and a first injection nozzle for communicating the first reservoir with one side of the reaction flow path to inject the first gas. A first gas introducing unit; And a second reservoir disposed inside the first reservoir and disposed below the first spray nozzle to store a second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path. And a second gas introduction part including a second injection nozzle for injecting two gases.

More preferably, the gas introduction portion includes a first reservoir for storing the first gas introduced from the outside, and a first injection nozzle for communicating the first reservoir with one side of the reaction flow path to inject the first gas. A first gas introducing unit; A second reservoir disposed under the first gas introducing unit and configured to communicate a second reservoir storing a second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path to inject the second gas; A second gas introducing part including an injection nozzle; And a third reservoir disposed below the first spray nozzle and inside the second reservoir, the third reservoir storing a third gas introduced from the outside, and communicating with the third reservoir and the other side of the reaction flow path. And a third gas introduction part including a third injection nozzle to allow gas to be injected.

Preferably, the reaction flow path part includes a downward inclination part provided to be inclined downward from the gas introduction part to the gas discharge part.

Preferably, the reaction flow path portion includes an upward inclination portion provided to be inclined upward from the gas introduction portion to the gas discharge portion.

According to the present invention, the susceptor is placed on the upper surface side of the chamber to mount the substrate to face down, thereby preventing impurities from parasitic deposition from falling off and contaminating the substrate. It is easy to maintain the device because the means and the like are separated, and it has a structure to introduce the reaction gas from the peripheral part and flow it toward the center to prevent the vortex generation, so that vapor deposition of good quality through stable gas flow There is an effect that can be achieved.

A chemical vapor deposition apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4.

1 is a cross-sectional view showing a state during the process of the chemical vapor deposition apparatus according to the present invention, Figure 2 is a cross-sectional view showing an open state of the chamber after the process of the chemical vapor deposition apparatus according to the present invention.

As shown, the chemical vapor deposition apparatus according to the present invention is composed of a chamber 10, a susceptor 20, a gas introduction portion 30, a gas discharge portion 40, the heating means 50, one or more Chemical vapor deposition is carried out on the substrate 5, but the deposition is performed while gas flows from the periphery of the chamber to the center.

The chamber 10 forms a hollow space, and has a susceptor 20 and a heating means 50 on which at least one substrate 5 is mounted, as shown in the figure, and the susceptor ( On the lower side facing 20), a reaction flow path part 60 through which a reaction gas flows is provided.

In addition, the chamber 10 includes an upper passage 11 for receiving the susceptor 20 and a lower passage 12 for forming the reaction flow passage part 60.

In addition, the upper passage 11 forms an upper plate portion 11a, a body portion 11b forming a space of a predetermined size therein, and a lower portion of the upper passage 11 and opens and closes the upper passage 11. It is composed of a flange portion (11c) that selectively contacts the lower road (12).

As such, the chamber 10 has a structure formed by the combination of the upper passage 11 and the lower passage 12, and the upper passage 11 is provided to be opened and closed with respect to the lower passage 12.

Therefore, when the substrate 5 is mounted or the substrate 5 is removed for the deposition process, the upper furnace 11 and the lower furnace 12 of the chamber 10 are easily separated to perform a desired operation. It is possible to do

In addition, the operation can be easily performed even in the case of performing the maintenance work such as the inspection of the abnormality of the device or the replacement of parts, and the removal of impurities (P) due to parasitic deposition.

The susceptor 20 is provided on the reaction flow path part 60 provided below the chamber 10, and accommodates at least one substrate 5 at a lower end thereof so that the surface of the substrate 5 is reacted. It is disposed to face the inner lower surface of the chamber 10 to be exposed to the flow path (60).

As shown in the drawing, the susceptor 20 is disposed at a predetermined distance from the inner lower surface of the lower portion 12 of the chamber 10 to the lower portion of the susceptor 20 and the chamber 10. The reaction flow path part 60 is formed between 12. That is, a space formed between the lower end portion of the susceptor 20 and the inner side surface of the lower passage 12 of the chamber 10 corresponds to the reaction flow passage part 60.

The lower end of the susceptor 20 is provided with at least one accommodating part (pocket) 21 for accommodating and mounting at least one substrate 5. Therefore, the substrate 5 mounted on the accommodating part 21 is face down and mounted to expose the surface of the reaction flow path part 60.

As such, the susceptor 20 forms the reaction flow path part 60 at a constant distance from the inner lower surface of the chamber 10, and supports the susceptor 20 to be disposed in the chamber 10. The support part 15 is provided in the chamber 10 so as to be possible.

The support part 15 is provided continuously along the inner circumferential surface of the lower portion 12 of the chamber 10 in an annular annular shape, or discontinuously provided at regular intervals.

On the other hand, the lower end of the susceptor 20 is fixed to the substrate (5) mounted on the receiving portion 21 to be received and supported in the receiving portion 21 without falling in the direction of the lower (12) (22) ) At least one.

In addition, the present invention includes a heating means 50 adjacent to the upper end of the susceptor 20 to adjust the reaction temperature of the substrate 5 mounted on the susceptor 20.

The heating means 50 is provided to enable height adjustment in the interior of the upper passage 11 of the chamber 10, when the upper passage 11 is coupled to the lower passage 12 of the susceptor 20 By being located in correspondence with the upper end, the heat necessary for the reaction is controlled and provided to the substrate 5.

The susceptor 20 disposed in the chamber 10 as described above is selectively coupled to the driving device 15 provided in the upper passage 11 of the chamber 10 to be driven through the driving device 15. .

The drive device 15 is composed of a drive motor 14 is fixed to the outer upper end of the upper passage 11 and a rotating shaft 13 is connected to the drive motor 14 to rotate, the rotating shaft 13 is In accordance with the opening and closing of the upper passage 11 is selectively coupled to the coupling portion 23 provided at the upper end of the susceptor 20.

Meanwhile, the gas introduction unit 30 is provided to introduce the reaction gas into the reaction flow path unit 60, and the gas introduction unit 30 will be described with reference to FIGS. 3 and 4.

3 is a cross-sectional view illustrating a state in which gas is injected into the reaction flow path and exhausted through a gas introduction part according to the present invention, and FIG. 4 is a plan view illustrating the gas introduction part and the reaction flow path of FIG. 3.

As shown, the gas introduction portion 30 is a planetary type provided along the outer circumferential surface of the lower portion 12 of the chamber 10 to introduce a predetermined reaction gas into the reaction flow path portion 60. Form a structure.

The reaction gas includes AlGaInN, NH ₃ , MO, etc. as a source gas, and N ₂ , H _2, etc., as a carrier gas, and MO is NH ₃ , TMGa, TMAI, Cp. ₂ Mg, SiH ₄ , TMIn and the like.

The gas introduction part 30 is provided with at least one reservoir 35 for storing a predetermined gas introduced through the gas inlet nozzle 37 from the outside around the side end of the lower passage 12, and the reservoir 35. ) Is provided with an injection nozzle 36 for injecting the gas stored in the tank into the reaction flow path part 60 in communication with the reservoir 35 and the reaction flow path part 60.

Therefore, when the reservoir 35 is provided with a single reservoir 35, the reservoir 35 is stored and sprayed or mixed only with the source gas and the carrier gas along the reservoir 35.

On the other hand, Figures 5 to 9 show various other embodiments of the gas introduction unit according to the present invention, it will be described.

As shown in FIG. 5, the gas introducing unit 30 according to another embodiment of the present invention has a dual structure of the first gas introducing unit and the second gas introducing unit.

The first gas introduction unit communicates with the first reservoir 31 storing the first gas introduced from the outside, and the first reservoir 31 and one side of the reaction flow path unit 60 to inject the first gas. It consists of the 1st injection nozzle 36a which makes it possible.

The second gas introduction part is disposed below the first gas introduction part, and includes a second reservoir 32 that stores a second gas introduced from the outside, the second reservoir 32, and the reaction flow path part 60. And a second spray nozzle 36b for communicating with the other side thereof so that the second gas is injected.

In the case where the gas introduction part is divided into upper and lower double as described above, the raw material gas and the carrier gas are divided and supplied to each of the reservoirs 31 and 32, and the gas is not mixed to each of the reservoirs 31 and 32. It is to be injected through the injection nozzles (36a, 36b) formed.

That is, the raw material gas is supplied to and stored in the first reservoir 31 close to the susceptor 20, and the carrier gas is stored in the second reservoir 32 far from the susceptor 20 so that each gas is separated. In this case, it is possible to perform the deposition process more efficiently because the source gas is not wasted in this case, and there is an advantage that the amount of the source gas can be reduced.

6 and 7 illustrate another embodiment in which the gas introducing unit 30 has a double structure of the first gas introducing unit and the second gas introducing unit.

The first gas introduction unit communicates with the first reservoir 31 storing the first gas introduced from the outside, and the first reservoir 31 and one side of the reaction flow path unit 60 to inject the first gas. It consists of the 1st injection nozzle 36a which makes it possible.

The second gas introduction part is disposed inward of the first reservoir 31, and is disposed below the first injection nozzle 36a to store a second gas that is introduced from the outside and the second reservoir 32. The second injection nozzle 36b communicates with the other side of the second reservoir 32 and the reaction flow path part 60 to inject the second gas.

As described above, when the gas introduction part is divided into left and right doubles, the carrier gas is supplied to and stored in the second reservoir 32 close to the reaction flow path part 60, and the first reservoir (away from the reaction flow path part 60) is provided. The raw material gas is stored in 31, and in this case, the raw material gas is farther from the high temperature reaction flow path part 60, so that it is possible to prevent the reaction from occurring in the first reservoir 31 in advance.

FIG. 8 illustrates another embodiment in which the gas introducing part 30 has a triple structure of the first gas introducing part, the second gas introducing part, and the third gas introducing part.

The first gas introduction unit communicates with the first reservoir 31 storing the first gas introduced from the outside, and the first reservoir 31 and one side of the reaction flow path unit 60 to inject the first gas. It consists of the 1st injection nozzle 36a which makes it possible.

The second gas introduction part is disposed below the first gas introduction part, and includes a second reservoir 32 that stores a second gas introduced from the outside, the second reservoir 32, and the reaction flow path part 60. And a second injection nozzle 36b for communicating with the other side of the side to allow the second gas to be injected.

The third gas introducing part is disposed below the second gas introducing part, and includes a third reservoir 33 for storing a third gas introduced from the outside, the third reservoir 33, and the reaction flow path part 60. The third injection nozzle (36c) is to communicate with the other side of the) so that the third gas is injected.

9 illustrates another embodiment in which the gas introducing part 30 has a triple structure of the first gas introducing part, the second gas introducing part, and the third gas introducing part.

The first gas introducing portion and the second gas introducing portion have the same configuration as the first gas introducing opening and the second gas introducing portion in FIG. 8.

And a third reservoir 33 disposed below the first spray nozzle 36a and inward of the second reservoir 32, and storing a third gas introduced from the outside, And a third spray nozzle 36c which communicates with the third reservoir 33 and the other side of the reaction flow path part 60 to inject the third gas.

At this time, the first gas and the second gas is a source gas, the third gas is preferably a carrier gas.

Meanwhile, after the deposition process, the waste gas is discharged to the outside through the gas discharge part 40 provided at the center of the lower surface of the lower path 12 of the chamber 10.

Therefore, the reaction gas injected from the periphery of the chamber 10 through the gas introduction part 30 flows in the direction of the center of the chamber 10 along the reaction flow path part 60 and then discharges the gas provided in the center. It is exhausted to the lower portion of the chamber 10 through the portion 40.

A chemical vapor deposition apparatus according to another embodiment of the present invention will be described with reference to FIGS. 10 and 11.

In FIG. 10 and FIG. 11, description of the upper furnace 11, which is an overlapping component, is omitted, and the gas introduction unit 30 described in FIGS. 3 and 4 is described, but the present invention is not limited thereto. It is also possible to apply the gas introduction part 30 shown to 5-9.

In the chemical vapor deposition apparatus according to another embodiment of the present invention, as shown in FIG. 10, the reaction flow path part 60 adjacent to the gas introduction part 30 provided at the periphery of the lower path 12 of the chamber 10 is shown. ), The cross-sectional area A is smaller than the cross-sectional area B of the reaction flow path part 60 adjacent to the gas discharge part 40 side.

That is, the lower path 12 of the chamber 10 is provided such that the inner surface facing the susceptor 20 is inclined downward from the periphery of the gas introduction part 30 side to the center of the gas discharge part 40 side. It is provided with a downward inclined portion (S).

Therefore, the cross-sectional area of the reaction flow path part 60 gradually increases from the gas introduction part 30 toward the gas discharge part 40 side.

In this case, even if the concentration of Al, Mg, etc. in the gas introduced from the gas introduction portion 30 is consumed as it goes toward the central portion from the periphery of the chamber 10, the gas is a substrate adjacent to the gas discharge portion 40 As it is collected on the side and discharged, the concentration of Al, Mg, and the like is increased, so that uniform deposition can be achieved.

As shown in FIG. 11, the chemical vapor deposition apparatus according to another embodiment of the present invention includes a reaction flow path part adjacent to the gas introduction part 30 provided at the periphery of the lower path 12 of the chamber 10. The cross-sectional area A of 60 is formed larger than the cross-sectional area B of the reaction flow path portion adjacent to the gas discharge portion 40 side.

That is, the lower path 12 of the chamber 10 is provided such that the inner surface facing the susceptor 20 is inclined upward from the periphery of the gas introduction part 30 side to the center of the gas discharge part 40 side. It is provided with an upward inclined portion (S ').

Therefore, the cross-sectional area of the reaction flow path part 60 gradually decreases from the gas introduction part 30 toward the gas discharge part 40.

In this case, the concentration of Al, Mg, etc. in the gas introduced from the gas introduction section 30 toward the central portion from the periphery of the chamber 10, that is, from the gas introduction section 30 to the gas discharge section 40. Even if it is consumed, the flow rate and the flow rate per area of the unit flow path through the gas increases, so that deposition can be performed on the substrate adjacent to the gas discharge part 40 without decreasing the concentration of Al and Mg.

Chemical vapor deposition apparatus according to the present invention configured as described above has a structure in which the chamber 10 is separated up and down, it is easy to mount or remove the substrate, as well as the susceptor 20 or the heating means 50 provided therein Easy maintenance and easy removal of impurities in the chamber by parasitic deposition.

In addition, the susceptor is provided on the lower surface of the susceptor 20, and the substrate is mounted to face down so that the susceptor is lowered through the rotating shaft provided on the upper surface of the chamber. It is possible to prevent the substrate from being contaminated because impurities caused by parasitic evaporation are caused to rotate by facing the surface.

In addition, the vapor deposition process is performed by allowing gas to flow from the periphery of the chamber to the central direction, and has a planetary structure that exhausts gas through the gas discharge part provided at the central side to maintain a stable gas flow to achieve a vapor deposition of good quality. It is possible.

While the invention has been shown and described with respect to particular embodiments, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as set forth in the claims below. I want to make it clear.

1 is a cross-sectional view showing a state during a process of a chemical vapor deposition apparatus according to the present invention.

2 is a cross-sectional view showing an open state of a chamber after a process of a chemical vapor deposition apparatus according to the present invention.

3 is a cross-sectional view showing a state in which gas is injected into the reaction flow path and exhausted through a gas introduction unit according to the present invention.

4 is a plan view illustrating a gas introduction part and a reaction flow path part of FIG. 3.

5 is a cross-sectional view showing another embodiment in which the gas introducing unit according to the present invention has a dual structure.

6 is a cross-sectional view showing another embodiment in which the gas introduction unit according to the present invention has a dual structure.

7 is a plan view illustrating a gas introduction part and a reaction flow path part of FIG. 6.

8 is a cross-sectional view showing another embodiment in which the gas introduction unit according to the present invention has a triple structure.

9 is a cross-sectional view showing another embodiment in which the gas introduction unit according to the present invention has a triple structure.

10 is a cross-sectional view showing another embodiment of a chemical vapor deposition apparatus according to the present invention.

11 is a cross-sectional view showing yet another embodiment of a chemical vapor deposition apparatus according to the present invention.

<Description of the symbols for the main parts of the drawings>

1: chemical vapor deposition apparatus 10: chamber

11: to the top 12: to the bottom

20: susceptor 21: receiving unit

30 gas inlet 40 gas outlet

50: heating means 60: reaction flow path

S: Downhill slope S ': Uphill slope

Claims (16)

A chamber in which a reaction flow path through which a reaction gas flows is provided; A susceptor provided on the reaction flow passage in the chamber, the susceptor receiving at least one substrate at a lower end thereof to expose the reaction flow passage; A gas introduction part provided to introduce the reaction gas into the reaction flow path; And Chemical vapor deposition apparatus including a gas discharge portion provided in the center of the reaction flow path portion to exhaust the gas after the reaction. The method of claim 1, And a heating means provided on the susceptor to provide heat to the substrate. The method of claim 1, wherein the chamber, An upper portion for receiving the susceptor, Chemical vapor deposition apparatus comprising a lower passage forming the reaction flow path. The method of claim 3, And the upper part is provided to be opened and closed with respect to the lower part. The method of claim 3 or 4, wherein the upper portion, With the top plate, A trunk portion forming a space of a predetermined size therein, And a flange portion forming a lower end of the upper part and selectively contacting the lower part according to opening and closing of the upper part. The method of claim 4, wherein And a driving device fixed to the upper road to drive the susceptor and selectively coupled to the susceptor according to opening and closing of the upper road. The method of claim 6, The drive device includes a drive motor fixed to the upper end of the upper road, and a rotating shaft rotated by the drive motor, The susceptor further comprises a coupling portion for selectively coupling to the rotary shaft on top of the susceptor. The method according to any one of claims 1 to 4, And a support member provided in the chamber to support the susceptor. The method according to any one of claims 1 to 4, Chemical vapor deposition apparatus further comprises at least one fixing clip provided on one side of the lower end of the susceptor to accommodate and support the substrate. The gas introducing unit according to any one of claims 1 to 4, At least one reservoir provided around the side end of the chamber to store a predetermined gas introduced from the outside, and in communication with the reservoir and the reaction flow path, the injection nozzle for injecting the gas stored in the reservoir to the reaction flow path Chemical vapor deposition apparatus comprising a. The method of claim 10, wherein the gas introducing portion, A first gas introduction part including a first reservoir storing a first gas introduced from the outside, and a first injection nozzle configured to communicate the first reservoir with one side of the reaction flow path to inject the first gas; And A second injection unit disposed under the first gas introducing unit and configured to communicate a second reservoir storing a second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path unit so that the second gas is injected; And a second gas introduction unit including a nozzle. The method of claim 10, wherein the gas introducing portion, A first gas introduction part including a first reservoir storing a first gas introduced from the outside, and a first injection nozzle configured to communicate the first reservoir with one side of the reaction flow path to inject the first gas; A second reservoir disposed under the first gas introducing unit and configured to communicate a second reservoir storing a second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path to inject the second gas; A second gas introducing part including an injection nozzle; And A third sprayer disposed under the second gas introducing unit, communicating with a third reservoir storing a third gas introduced from the outside, and communicating with the third reservoir and the other side of the reaction flow path to inject the third gas; And a third gas introduction part including a nozzle. The method of claim 10, wherein the gas introducing portion, A first gas introduction part including a first reservoir storing a first gas introduced from the outside, and a first injection nozzle configured to communicate the first reservoir with one side of the reaction flow path to inject the first gas; And A second reservoir disposed inside the first reservoir and disposed below the first spray nozzle to store a second gas introduced from the outside; and communicating the second reservoir with the other side of the reaction flow path to communicate with the second reservoir; And a second gas introduction part including a second injection nozzle to allow gas to be injected. The method of claim 10, wherein the gas introducing portion, A first gas introduction part including a first reservoir storing a first gas introduced from the outside, and a first injection nozzle configured to communicate the first reservoir with one side of the reaction flow path to inject the first gas; A second reservoir disposed under the first gas introducing unit and configured to communicate a second reservoir storing a second gas introduced from the outside, and communicating the second reservoir with the other side of the reaction flow path to inject the second gas; A second gas introducing part including an injection nozzle; And A third reservoir disposed below the first spray nozzle and inward of the second reservoir and storing a third gas introduced from the outside; and communicating the third reservoir with the other side of the reaction flow path to communicate with the third gas. And a third gas introducing part including a third spray nozzle to spray the gas. The reaction flow path according to any one of claims 1 to 4, wherein And a downward inclination part provided to be inclined downward from the gas introduction part to the gas discharge part. The reaction flow path according to any one of claims 1 to 4, wherein And an upward inclination part provided to be inclined upward from the gas introduction part to the gas discharge part.

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