KR20100003319A - Bonding method of ceramics substrate and metal fiol, light emitting diode and method for fabricating the same - Google Patents

Bonding method of ceramics substrate and metal fiol, light emitting diode and method for fabricating the same Download PDF

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Publication number
KR20100003319A
KR20100003319A KR20080059509A KR20080059509A KR20100003319A KR 20100003319 A KR20100003319 A KR 20100003319A KR 20080059509 A KR20080059509 A KR 20080059509A KR 20080059509 A KR20080059509 A KR 20080059509A KR 20100003319 A KR20100003319 A KR 20100003319A
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South Korea
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ceramic substrate
metal film
light emitting
emitting diode
layer
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KR20080059509A
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Korean (ko)
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KR101526568B1 (en
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황덕기
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item

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Abstract

Embodiments relate to a method of bonding a ceramic substrate and a metal film, a light emitting diode package, and a method of manufacturing the same.

According to an embodiment, a method of bonding a ceramic substrate and a metal film may include preparing a first ceramic substrate; Forming a first paste layer comprising Cu 2 O powder on the first ceramic substrate; Forming a metal film on the first paste layer; And heat-treating the first ceramic substrate, the first paste layer, and the metal film to bond the first ceramic substrate and the metal film.

Description

Bonding method of ceramic substrate and metal film, light emitting diode package and manufacturing method thereof {BONDING METHOD OF CERAMICS SUBSTRATE AND METAL FIOL, LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME}

Embodiments relate to a method of bonding a ceramic substrate and a metal film, a light emitting diode package, and a method of manufacturing the same.

LTCC substrates have been used to fabricate conventional LED packages.

The LTCC substrate is manufactured by heat-treating a green sheet made of glass-ceramic material, which is inaccurate in dimensional accuracy because it shrinks in a horizontal direction and a vertical direction during the heat treatment process.

In addition, since the LTCC substrate uses a glassy binder, there is a problem that the thermal conductivity is low and the heat resistance characteristics are lowered.

The embodiment provides a light emitting diode package using a ceramic substrate and a method of manufacturing the same.

The embodiment provides a bonding method capable of bonding a ceramic substrate and a metal film.

According to an embodiment, a method of bonding a ceramic substrate and a metal film may include preparing a first ceramic substrate; Forming a Cu 2 O layer and a metal film on the first ceramic substrate; And bonding the first ceramic substrate and the metal film by heat-treating the first ceramic substrate, the Cu 2 O layer, and the metal film.

A light emitting diode package according to an embodiment includes a first ceramic substrate; A first bonding layer formed on the first ceramic substrate; A metal film formed on the first bonding layer; A second bonding layer formed on the metal film; A second ceramic substrate having a cavity formed on the second bonding layer; A light emitting diode formed on the metal film; And a wire for electrically connecting the light emitting diode and the metal film.

In another embodiment, a method of manufacturing a light emitting diode package includes preparing a first ceramic substrate; Forming a first paste layer on the first ceramic substrate; Forming a metal film on the first paste layer; Heat treating the first ceramic substrate, the first paste layer, and the metal film to change the first paste layer to a first bonding layer so that the first ceramic substrate and the metal film are bonded to each other; Forming a second ceramic substrate having a second paste layer and a cavity on the metal film; The first ceramic substrate, the first bonding layer, the metal film, the second paste layer, and the second ceramic substrate are heat-treated to change the second paste layer to the second bonding layer, thereby bonding the metal film and the second ceramic substrate. Making it possible; Forming a light emitting diode on the metal film; And electrically connecting the light emitting diode to the metal film.

The embodiment can provide a method of bonding a ceramic substrate and a metal film that can bond the ceramic substrate and the metal film with a strong bonding strength.

The embodiment can provide a light emitting diode package having improved dimensional accuracy and improved heat dissipation characteristics and heat resistance characteristics, and a method of manufacturing the same.

In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure may be "on" or "under" the substrate, each layer (film), region, pad or pattern. "On" and "under" include both "directly" or "indirectly" formed through another layer, as described in do. In addition, the criteria for the above / above or below of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a method of bonding a ceramic substrate and a metal film, a light emitting diode package, and a method of manufacturing the same according to embodiments will be described in detail with reference to the accompanying drawings.

1 to 6 are views illustrating a bonding method of a ceramic substrate and a metal film according to an embodiment.

First, referring to FIG. 1, a first ceramic substrate 10 is prepared, and a paste 20 containing a predetermined filler powder is printed on the first ceramic substrate 10 by screen printing. Form layer 30.

The first ceramic substrate 10 has an advantage of excellent heat dissipation characteristics and heat resistance characteristics compared to the LTCC substrate, and since the first ceramic substrate 10 is provided in a heat-treated state, shrinkage due to heat treatment does not occur, and thus dimensional accuracy is high.

As the first ceramic substrate 10, an alumina (Al 2 O 3 ) substrate is used, and an AlN substrate, a Si 3 N 4 substrate, or a SiC substrate may be used.

The paste 20 is a filler powder and includes Cu 2 O powder. The Cu 2 O powder is prepared by a conventional powder manufacturing process, and has a particle size of 0.1 ~ 10.0㎛. In an embodiment, the Cu 2 O powder is prepared to have a particle size of 0.1 ~ 3.0㎛.

The paste 20 includes an organic binder resin, and at least one of an epoxy resin, a polyester resin, and an alkyd resin may be used as the organic binder resin. For example, when the epoxy resin is used, at least one of dicyandiamide, imidasol, polyamine, and amine may be used as a curing agent. For example, in the case where the polyester resin or alkyd resin is used, tapinol, benzene, toluene, xylene, ethyl cellosolve, butyl cellosolve, cellosolve acetate, butyl acetate cellosolve, butylcarbye as solvents At least one of toll and butyl acetate can be used.

The content of the Cu 2 O powder in the paste 20 is included in a proportion of 15 to 80% by weight based on the weight of the whole paste including the organic binder resin and the curing agent or solvent. When the content of the Cu 2 O powder is less than 15%, there is a problem of printing several times, if more than 80% there is a problem that difficult to control the coating thickness of the paste.

As described above, the paste 20 containing the Cu 2 O powder is printed on the first ceramic substrate 10 by screen printing through squeeze to form the first paste layer 30. The amount of the first paste layer 30 is such that the weight after drying is 0.3 to 6 × 10 −5 g / mm 2. The drying process of the first paste layer 30 is performed for 8 to 12 minutes at a temperature of 60 ~ 80 ℃.

When the weight of the first paste layer 30 after drying is less than 0.3 × 10 −5 g / mm 2, the bond strength drops, and when the weight of the first paste layer 30 is greater than 6 × 10 −5 g / mm 2, the pin hole ( Pin Holes are more likely to occur.

Next, as shown in FIG. 2, a metal film 50 is formed on the first paste layer 30. For example, a copper film may be used as the metal film 30.

In addition, a heat treatment process is performed on the resultant product in which the first ceramic substrate 10, the first paste layer 30, and the metal film 30 are sequentially formed.

As shown in FIG. 3, the heat treatment process is performed for 1 to 60 minutes at an inert atmosphere using a gas including at least one of N 2 , Ar, and He, and a temperature of 1050 to 1083 ° C.

At this time, Cu 2 O of the first paste 30, alumina of the first ceramic substrate 10, and copper (Cu) of the metal film 30 cause a chemical reaction to form a first bonding layer 31. Is formed. The first bonding layer 31 is formed by combining Al, Cu and O at a eutectic temperature of Cu and O at about 1079 ° C. to form at least one of a spinel phase of CuAl 2 O 4 and a pyrochlore phase of CuAlO 2 . .

The stress due to the difference in thermal expansion coefficient between the metal film 30 and the first ceramic substrate 10 is absorbed by the ductility of the metal film 30, and thus the interface separation is not performed. After completion of the bonding, the bonding strength of the metal film 30 and the first ceramic substrate 10 forms a very strong bond of 6 N / mm or more.

Referring to FIG. 4, a second ceramic substrate 90 is prepared, and a second paste layer 70 is formed on the second ceramic substrate 90. The composition and the formation method of the second ceramic substrate 90 and the second paste layer 70 are the same as those of the first ceramic substrate 10 and the first paste layer 70 as described above with reference to FIGS. 1 and 2. same.

Referring to FIG. 5, the second ceramic substrate 90 and the second paste layer illustrated in FIG. 4 are formed on a structure on which the first ceramic substrate 10, the first bonding layer 31, and the metal film 30 are formed. A structure on which 70 is formed is disposed and a heat treatment process as described in FIG. 3 is performed.

Accordingly, a structure in which the first ceramic substrate 10, the first bonding layer 31, the metal film 30, the second bonding layer 71, and the second ceramic substrate 90 are stacked is formed.

In the bonding method of the ceramic substrate and the metal film according to the embodiment, Cu 2 O included in the paste, alumina of the ceramic substrate, and copper (Cu) of the metal film cause a chemical reaction to form a spinel phase of CuAl 2 O 4 and CuAlO 2 . At least one of the pyrochlore phases can be produced to provide a strong bond strength between the ceramic substrate and the metal film.

6 to 9 are views illustrating a light emitting diode package and a method of manufacturing the same according to the embodiment.

The method of manufacturing the LED package illustrated in FIGS. 6 to 9 is performed based on the bonding method of the ceramic substrate and the metal film described with reference to FIGS. 1 to 5, and the descriptions overlapped with those described in FIGS. 1 to 5 are omitted. Do it.

Referring to FIG. 6, a first ceramic substrate 10 is prepared. Thermal conductive vias 11 may be formed in the first ceramic substrate 10 to improve heat dissipation characteristics. The thermally conductive via 11 may be formed by forming a via in the first ceramic substrate 10 through a laser drilling method and filling a paste containing Cu in the via.

The paste containing Cu contains Cu powder. The Cu powder is prepared by a conventional powder manufacturing process, and has a particle size of 0.1 ~ 10.0㎛. In an embodiment, the Cu powder is prepared to have a particle size of 0.1 ~ 3.0㎛. The Cu-containing paste includes an organic binder resin, and at least one of an epoxy resin, a polyester resin, and an alkyd resin may be used as the organic binder resin. For example, when the epoxy resin is used, at least one of dicyandiamide, imidasol, polyamine, and amine may be used as a curing agent. For example, in the case where the polyester resin or alkyd resin is used, tapinol, benzene, toluene, xylene, ethyl cellosolve, butyl cellosolve, cellosolve acetate, butyl acetate cellosolve, butylcarbye as solvents At least one of toll and butyl acetate can be used.

Referring to FIG. 7, a first bonding layer 31, a metal film 50, a second bonding layer 51, and a second ceramic substrate 90 are stacked on the first ceramic substrate 10.

The first bonding layer 31 and the metal film 50 may be patterned through a lithography process. A cavity 100 is formed in the second ceramic substrate 90. The cavity 100 provides a space for mounting a light emitting diode as described later.

The cavity 100 of the second ceramic substrate 90 may be formed by punching in a green sheet state, or may be formed by a punching process after slip casting.

Referring to FIG. 8, in the state in which the first ceramic substrate 10, the metal film 50, and the second ceramic substrate 90 are stacked, the reflective film 51 on the metal film 50 is formed by electroplating. To form.

The reflective film 51 may be formed of a stacked structure of Ni and Ag or a stacked structure of Ni, Pd, and Ag.

Referring to FIG. 9, a light emitting diode 110 is mounted on the metal film 50. The light emitting diode 110 and the metal film 50 are electrically connected to each other through a wire 120. In the exemplary embodiment, two wires 120 are used, but only one wire 120 may be used according to the structure of the light emitting diode 110, and an electrode layer may be formed under the light emitting diode 110. have.

In addition, a molding member 130 is formed in a cavity including the light emitting diode 110 to manufacture a light emitting diode package.

In the LED package according to the embodiment, the influence of heat can be minimized by using a ceramic substrate having excellent heat dissipation characteristics and heat resistance characteristics. Therefore, there is an advantage that can prevent damage to the light emitting diode or degradation of performance due to heat.

In addition, the method of manufacturing a light emitting diode package according to the embodiment may improve reliability by allowing the ceramic substrate and the metal film to be bonded with a strong bonding force.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 to 6 illustrate a bonding method of a ceramic substrate and a metal film according to an embodiment.

6 to 9 are views illustrating a light emitting diode package and a method of manufacturing the same according to the embodiment.

Claims (16)

Preparing a first ceramic substrate; Forming a Cu 2 O layer and a metal film on the first ceramic substrate; And Bonding the first ceramic substrate and the metal film by heat-treating the first ceramic substrate, the Cu 2 O layer, and the metal film. The method of claim 1, wherein the forming of the Cu 2 O layer and the metal film Forming a first paste layer comprising Cu 2 O powder on the first ceramic substrate, and forming the metal film on the first paste layer. The method of claim 2, And the first ceramic substrate is an alumina (Al 2 O 3 ) substrate, and the metal film is a copper (Cu) film. The method of claim 3, wherein And the first paste layer is changed into a bonding layer of at least one of a spinel phase of CuAl 2 O 4 and a pyrochlore phase of CuAlO 2 . The method of claim 2, Forming a second paste layer and a second ceramic substrate on the metal film and performing heat treatment to bond the metal film to the second ceramic substrate. A first ceramic substrate; A first bonding layer formed on the first ceramic substrate; A metal film formed on the first bonding layer; A second bonding layer formed on the metal film; A second ceramic substrate having a cavity formed on the second bonding layer; A light emitting diode formed on the metal film; And The light emitting diode package including a wire for electrically connecting the light emitting diode and the metal film. The method of claim 6, The first ceramic substrate and the second ceramic substrate is any one of an alumina (Al 2 O 3 ) substrate, AlN substrate, Si 3 N 4 substrate, SiC substrate. The method of claim 6, The first bonding layer and the second bonding layer is a light emitting diode package of at least one of a spinel phase of CuAl 2 O 4 and pyrochlore phase of CuAlO 2 . The method of claim 6, The first ceramic substrate is a light emitting diode package formed with a heat conducting via containing copper (Cu). The method of claim 6, A light emitting diode package formed with a reflective film between the metal film and the light emitting diode. The method of claim 10, The reflective film is a light emitting diode package formed of a stacked structure of Ni and Ag or a stacked structure of Ni, Pd, Ag. Preparing a first ceramic substrate; Forming a first paste layer on the first ceramic substrate; Forming a metal film on the first paste layer; Heat-treating the first ceramic substrate, the first paste layer, and the metal film to change the first paste layer into a first bonding layer so that the first ceramic substrate and the metal film are bonded to each other; Forming a second ceramic substrate having a second paste layer and a cavity on the metal film; The first ceramic substrate, the first bonding layer, the metal film, the second paste layer, and the second ceramic substrate are heat-treated to change the second paste layer to the second bonding layer, thereby bonding the metal film and the second ceramic substrate. Making it possible; Forming a light emitting diode on the metal film; And The light emitting diode package manufacturing method comprising the step of electrically connecting the light emitting diode and the metal film. The method of claim 12, The first ceramic substrate and the second ceramic substrate are an alumina (Al 2 O 3 ) substrate, the first paste layer and the second paste layer include Cu 2 O powder, and the metal film is a copper (Cu) film. Package manufacturing method. The method of claim 13, The first bonding layer and the second bonding layer is at least any one of a spinel phase of CuAl 2 O 4 and pyrochlore phase of CuAlO 2 . The method of claim 12, Before forming the light emitting diode on the metal film, forming a reflective film on the metal film. The method of claim 12, And forming a thermally conductive via containing copper (Cu) on the first ceramic substrate.
KR1020080059509A 2008-06-24 2008-06-24 Bonding method of ceramics substrate and metal fiol, light emitting diode and method for fabricating the same KR101526568B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101427636B1 (en) * 2013-04-10 2014-08-07 주식회사 아모센스 Led substrate and method for manufacturing the same and led package comprising the same
KR20180037865A (en) * 2016-10-05 2018-04-13 주식회사 아모센스 Ceramic substrate and ceramic substrate manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703186B1 (en) * 1999-08-11 2004-03-09 Mitsuboshi Belting Ltd. Method of forming a conductive pattern on a circuit board
JP3948411B2 (en) * 2003-02-03 2007-07-25 株式会社村田製作所 Multilayer ceramic substrate and manufacturing method thereof
JP4555026B2 (en) * 2004-08-27 2010-09-29 日本特殊陶業株式会社 Photoelectric conversion module, laminated substrate assembly
JP4452216B2 (en) * 2005-06-29 2010-04-21 日本特殊陶業株式会社 Ceramic package for light emitting device and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101427636B1 (en) * 2013-04-10 2014-08-07 주식회사 아모센스 Led substrate and method for manufacturing the same and led package comprising the same
KR20180037865A (en) * 2016-10-05 2018-04-13 주식회사 아모센스 Ceramic substrate and ceramic substrate manufacturing method

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