KR20090107752A - Plasma display panel and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A plasma display panel and a method for manufacturing the same are provided to increase the wall charge hold capability of a protective film. CONSTITUTION: A protective film includes a scan electrode, a sustain electrode, and the first dielectrics and the boron nitride(BN) in the first top of the substrates. The first panel includes the protective film(220). The fluorescent substance is attached with the first panel, and the partition is arranged therebetween. The fluorescent substance is formed on the side of the address electrode, the second dielectrics, the partition and the second dielectrics.

Description

Plasma display panel and method for manufacturing the same

The present invention relates to a plasma display panel, and more particularly, to a protective film of a plasma display panel.

With the advent of the multimedia era, display devices that can express more detailed, larger, and more natural colors are required. However, the current CRT (Cathode Ray Tube) has a limit to compose a large screen of 40 inches or more, and the LCD (Liquid Crystal Display), PDP (Plasma Display Panel), and projection TV (Television) are used for high definition video. It is rapidly developing for expansion.

The maximum characteristics of the display device such as the PDP can be manufactured in a thin thickness compared to the CRT, which is self-luminous, and is easy to manufacture a large flat screen (60 to 80 inches) and clearly distinguished from the conventional CRT in terms of style and design. Becomes

The PDP has a lower plate having an address electrode, a top plate having a sustain electrode pair, and a discharge cell defined as a partition wall, and a phosphor is coated in the discharge cell to display a screen. Specifically, when discharge occurs in the discharge space between the upper plate and the lower plate, ultraviolet rays generated at this time are incident on the phosphor to generate visible light, and the screen is displayed by the visible light.

Here, a dielectric layer is formed on the upper panel and the lower panel of the plasma display panel to protect the sustain electrode pair and the address electrode, respectively. However, due to the impact of (+) ions during the discharge of the plasma display panel, the top dielectric provided in the upper panel is worn out, and at this time, a metallic material such as sodium (Na) may short the electrode. Therefore, it may be formed by coating magnesium oxide (MgO), which withstands the impact of (+) ions, on the top dielectric provided in the upper panel.

However, the above-described protective film of the plasma display panel has the following problems.

In the plasma display panel, when a voltage is applied to the electrode to dissociate the discharge gas to form a plasma, ions in the plasma enter the protective film and secondary electrons are emitted from the surface of the protective film, so that gas discharge may occur at a lower voltage. help. Magnesium oxide is used as the main material of the protective film because of its relatively high secondary electron emission coefficient and relatively excellent sputtering properties.

However, as the use time of the plasma display panel elapses, there is a problem in that the protective film characteristics deteriorate due to ion shock and redeposition. That is, when the plasma display panel is driven, due to the impact of (+) ions, the protective film properties deteriorate when the magnesium component of the protective film is ionized and then deposited on the protective film.

There is also an attempt to add carbon nanotubes to the protective film in order to further improve the secondary electron emission characteristics. However, carbon nanotubes have improved electron emission characteristics due to electric fields, but since carbon nanotubes are conductors, they lose the ability to maintain wall charges in the discharge space when the plasma display panel is driven.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a plasma display panel in which the characteristics of the protective film are not degraded even when used for a long time.

Another object of the present invention is to provide a plasma display panel having a protective film having excellent electron emission characteristics and excellent insulation and excellent wall charge retention capability.

In order to solve the above-mentioned problems, the present invention provides a light emitting device comprising: a first panel including a protective film including at least one scan electrode, a sustain electrode, a first dielectric, and boron nitride (BN) on a first substrate; And a second panel bonded to the first panel with the barrier ribs interposed therebetween, the second panel including at least one address electrode, a second dielectric, and a phosphor formed on a side surface of the barrier rib and the second dielectric on a second substrate. It provides a plasma display panel comprising a.

According to another embodiment of the present invention, there is provided a method, comprising: forming at least one scan electrode, a sustain electrode, and a first dielectric on a first substrate; Forming a protective film including boron nitride on the first dielectric; Forming at least one address electrode, a second dielectric and a partition on the second substrate; Forming a phosphor on the side of the partition and the second dielectric; And attaching the first substrate and the second substrate to each other.

The effects of the plasma display panel and the manufacturing method according to the present invention described above are as follows.

First, since boron nitride is provided in the protective film, the change in physical properties of the protective film according to the discharge time of the protective film is extremely small, and thus the service life of the protective film may be longer than that of the protective film made of magnesium oxide.

Second, some of the boron nitride nanotubes in the protective film protrude out of the thin film, and the electric field is concentrated on the protruding portion, thereby enhancing the secondary electron emission effect.

Third, even after the driving time has elapsed, the initial characteristics are not degraded by ion shock and redeposition, and the characteristics do not deteriorate because they do not react with moisture and carbon in the atmosphere.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention that can specifically realize the above object will be described. The same components as in the prior art are given the same names and the same reference numerals for convenience of description, and detailed description thereof will be omitted.

In the accompanying drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity.

1 is a view showing a discharge cell structure of an embodiment of a plasma display panel according to the present invention. The discharge cell structure of an embodiment of a plasma display panel according to the present invention will be described with reference to FIG. 1.

As shown, the plasma display panel of the present invention is formed on the front substrate 170, the transparent electrodes 180a, 180b provided in one direction and the bus electrodes 180a ', 180b' made of a conventional metal material. . A dielectric and a protective film 195 are sequentially formed on the front substrate 170 while covering the transparent electrode and the bus electrode.

The front substrate 170 is formed through a process such as milling and cleaning the glass for the display substrate. Here, the transparent electrodes 180a and 180b may be formed of indium-tin-oxide (ITO), SnO ₂ , or the like by a photoetching method by sputtering or a lift-off method by CVD. Formed. The bus electrodes 180a 'and 180b' include silver (Ag) and the like. In addition, a black matrix may be formed between the transparent electrode pair and the bus electrode, and includes a low melting glass and a black pigment.

An upper dielectric 190 is formed on the front substrate 170 on which the transparent electrodes 180a and 180b and the bus electrodes 180a and 180b are formed. Here, the dielectric comprises transparent low melting glass and filler. A protective film 195 is formed on the upper dielectric 190. The passivation layer 195 includes boron nitride.

2A to 2C illustrate structures of one embodiment of a protective film. Hereinafter, the structure of one embodiment of the protective film of the plasma display panel according to the present invention will be described with reference to FIGS. 2A to 2C.

In FIG. 2A, the protective film 100 includes boron, in which boron is formed of nitride. Boron nitride (BN) is the hardest material after diamond, and has excellent sputtering and excellent secondary electron emission characteristics. In this embodiment, the boron nitride 205 is provided in the shape of a polycrystalline, the entire protective film 200 is provided in the shape of a thin film of about 100 ~ 1000 nanometers in thickness. Here, the thin film provided with boron nitride 205 has a maximum value at about 234 nanometers (cathode luminescence).

According to the present exemplary embodiment, the plasma display panel including the protective film 200 as the boron nitride 205 has a very small change in physical properties according to discharge time, and thus may have a longer life than the protective film made of magnesium oxide. This characteristic is because boron nitride 205 is chemically stable and does not change significantly even after prolonged exposure to the atmosphere.

The protective film 200 is formed by depositing boron nitride by electron beam deposition or sputtering, or by depositing boron by electron beam deposition or reactive sputtering in a nitrogen atmosphere, a specific process will be described later.

In FIG. 2B, the passivation layer 210 includes magnesium oxide (MgO) although not shown in addition to boron nitride. Here, the entire protective film 210 is provided as a thin film having a thickness of about 100 to 1000 micrometers, and boron nitride is provided in the shape of a nanotube in the protective film 210. That is, magnesium oxide crystals are provided in the passivation layer 200, and boron nitride nanotubes 215 are provided at predetermined intervals. Each boron nitride nanotube 215 is provided in a direction perpendicular to the first dielectric. Here, the term “vertical” does not mean 90 ° geometrically, but means that the arrangement direction of the boron nitride nanotubes 215 faces the discharge cell.

In addition, some of the boron nitride nanotubes 215 are provided to protrude to the outside of the thin film, and the electric field is concentrated on the protruding portions to increase the secondary electron emission effect. Here, since the boron nitride nanotubes 215 have an insulating property, unlike the carbon nanotubes, the boron nitride nanotubes 215 maintain wall charges, thereby lowering the discharge voltage of the plasma display panel.

In the embodiment shown in FIG. 2C, the passivation layer 220 includes boron nitride and magnesium oxide. The protective film has a two-layer structure of a first layer 225 and a second layer 228. Here, the first layer 225 interviews the first dielectric 190, and the second layer 228 is provided on the first layer 225 and interviews the discharge space. The first layer 225 includes magnesium oxide in a thin film, and the second layer 228 includes boron nitride in a crystal form.

Here, the first layer 225 may be provided in the shape of a thin film having a thickness of 100 ~ 500 nanometers. In addition, the boron nitride 228 may be provided on the first layer 225 in the form of a single crystal, and the protective film 220 having such a structure has a cathode luminescence having a maximum at about 215 nanometers. It is characterized by. In addition, the boron nitride 228 may have a hexagonal structure or a cubic structure, and the light emitting characteristics of the boron nitride 228 may be better when the hexagonal structure is formed.

The protective film of the plasma display panel according to the present embodiment of the above structure has a disadvantage in that initial characteristics are deteriorated by ion shock and redeposition as the driving time elapses in the conventional protective film made of magnesium oxide, and moisture in the air when exposed to the air. And it can improve the problem that the property is degraded by reacting with carbon.

Meanwhile, an address electrode 120 is formed on one surface of the rear substrate 110 in a direction crossing the transparent electrodes 180a and 180b, and covers the address electrode 120 on the front surface of the rear substrate 110. White dielectric 130 is formed. The white dielectric 130 is applied by a printing method or a film laminating method, and then completed through a firing process. In addition, the partition wall 140 is formed to be disposed between the address electrodes 120 on the white dielectric 130. In addition, the partition wall 140 may be stripe-type, well-type, or delta-type.

Although not shown, a black top may be formed on the partition wall 140. The phosphor layers 150a, 150b, and 150c of red (R), green (G), and blue (B) are formed between the partition walls 140. The point where the address electrode 120 on the back substrate 110 and the sustain electrode pairs 180a and 180b on the front substrate 110 cross each other constitutes a discharge cell.

In addition, the front substrate 170 and the rear substrate 110 are bonded to each other with the partition wall 140 interposed therebetween, and are bonded through a sealing material provided on the outer side of the substrate. The upper panel and the lower panel are connected to the driving device.

3 is a view showing a driving device and a connecting portion of the plasma display panel according to the present invention. Hereinafter, referring to FIG. 3, a connection portion between the panel and the driving device having the above-described structure will be described.

As illustrated, the entire plasma display device includes a panel 320, a driving substrate 330 for supplying a driving voltage to the panel 320, electrodes for each cell of the panel 320, and the driving substrate. A tape carrier package (hereinafter referred to as TCP) 340 is a kind of flexible substrate connecting the 330. As described above, the panel 320 includes a front substrate, a rear substrate, and a partition wall.

In addition, an electrical and physical connection between the panel 320 and the TCP 340 and an electrical and physical connection between the TCP 340 and the driving substrate 330 may be referred to as an anisotropic conductive film (ACF). use. ACF is a conductive resin film made of nickel (Ni) balls coated with gold (Au).

4 is a view showing a substrate wiring structure of a typical tape carrier package.

As shown, the TCP 340 is in charge of the connection between the panel 320 and the driving substrate 330, the driving driver chip is mounted. The TCP 340 is connected to the wiring 343 on the flexible substrate 342 and the wiring 343 and receives power from the driving substrate 330 to provide a specific electrode of the panel 320. A driver driver chip 341 is formed. Here, since the driving driver chip 341 has a structure in which a plurality of signals of high power are alternately outputted by receiving low voltage and driving control signals, the number of wirings connected to the driving substrate 330 is small and the panel ( The number of wires connected to the 320 side is large. Therefore, the wiring of the driving driver chip 341 may be connected through a space on the driving substrate 330 side. The wiring 343 may not be divided by a boundary of the center of the driving driver chip 341.

5 is a view schematically showing another embodiment of a plasma display device according to the present invention.

In the present embodiment, the panel 320 is connected to the driving device through a flexible printed circuit (FPC) 350. Here, the FPC 350 is a film having a pattern formed therein using polymide. In this embodiment, the FPC 350 and the panel 320 are connected to each other through the ACF. In addition, in this embodiment, the driving substrate 330 is a natural PCB circuit.

Here, the driving device includes a data driver, a scan driver, a sustain driver, and the like. Here, the data driver is connected to the address electrode to apply a data pulse. The scan driver is connected to the scan electrode to supply a rising ramp waveform, a ramping ramp waveform, a scan pulse, and a sustain pulse. The sustain driver also applies a sustain pulse and a DC voltage to the common sustain electrode.

The plasma display panel is driven by being divided into a reset period, an address period, and a sustain period. In the reset period, a rising ramp waveform Ramp-up is simultaneously applied to the scan electrodes. In the address period, the negative scan pulse scan is sequentially applied to the scan electrodes, and at the same time, the positive data pulse is applied to the address electrodes in synchronization with the scan pulse. In the sustain period, a sustain pulse sus is alternately applied to the scan electrodes and the sustain electrodes.

6A to 6K illustrate an embodiment of a method of manufacturing a plasma display panel according to the present invention. Referring to FIGS. 6A to 6K, a method of manufacturing a plasma display panel according to the present invention is as follows.

First, as shown in FIG. 6A, transparent electrodes 180a and 180b and bus electrodes 180a 'and 180b' are formed on the front substrate 170. Here, the front substrate 170 is manufactured by milling and cleaning the glass or soda lime glass for the display substrate.

The transparent electrodes 180a and 180b form ITO, SnO ₂ , or the like by a photoetching method by sputtering, a lift-off method by CVD, or the like. The bus electrodes 180a 'and 180b' are formed of a material such as silver (Ag) by a screen printing method, a photosensitive paste method, or the like. In addition, a black matrix may be formed on the transparent electrode pairs 180a and 180b. The low melting glass and the black pigment may be formed by a screen printing method or a photosensitive paste method.

Subsequently, as shown in FIG. 6B, a material including low melting glass or the like is screen-printed or coated on the front substrate 170 on which the transparent electrode pairs 180a and 180b and the bus electrodes 180a '180b' are formed. Alternatively, the upper plate dielectric 190 is formed by laminating (in the case of XGA class) the green sheet by laminating or the like.

Next, a protective film is formed on the top dielectric 190. The protective film 195 includes boron, where boron is formed of nitride. Boron nitride (BN) is the hardest material after diamond, and has excellent sputtering and excellent secondary electron emission characteristics.

First, an embodiment of a process of depositing a protective film will be described with reference to FIG. 6C.

In this embodiment, a protective film is deposited by sputtering. Sputtering is a technique of attaching a film to a surface after driving an inert element such as argon on a metal plate to drive out metal molecules. As shown, the sputtering apparatus 600 is provided with a support 610 for supporting the substrate 620 on the lower surface of the inside. Herein, the substrate 620 is an object to form the protective film 195. In this embodiment, the substrate 620 refers to a structure in which a transparent electrode, a bus electrode, and a top dielectric are formed on the front substrate. Therefore, the portion where the target 630 is stacked in the substrate 620 corresponds to the top dielectric. Although not shown, the support 610 may be provided with a heater for controlling the temperature of the sputtering device 600 or the temperature of the substrate 620. A target 630 is provided on an upper surface of the inside. The target 630 is a protective film material. In this embodiment, boron is provided.

A process of depositing the protective film 195 using the above-described sputtering apparatus will be described below.

First, an anode electrode is connected to a lower surface on which the substrate 620 is disposed, and a cathode electrode is connected to an upper surface on which the target 630 is disposed. An inert gas such as Ar (argon) gas is supplied as the sputtering gas. When powered, the Ar gas collides with and is excited with electrons emitted from the cathode electrode and becomes Ar ⁺ . The excited gas is attracted to the upper surface with the cathode electrode and collides with the target 620. The excited gas has as much energy as hv, and this energy is transferred to the above-described protective film material 631 in the target 630 upon collision with the target 630. Plasma is emitted when the energy of the bonding film of the protective film material 631 and the energy enough to overcome the work function of the electrons are transferred. The protective film material 631, that is, boron is nitrided by nitrogen (N ₂ ) supplied from the side surface of the sputtering apparatus 600 to form boron nitride BN. In addition, boron nitride formed by the above-described process is deposited on the substrate 620.

In this embodiment, the boron element is plasmatized, and then bonded with nitrogen gas to deposit it on the first dielectric. However, boron nitride itself may be used as a material, and then it may be deposited on a first dielectric after being plasmalized.

Hereinafter, an embodiment of a process of depositing a protective film by an electron beam deposition method will be described with reference to FIG. 6D.

In the electron beam deposition method, when the electron beam collides with the protective film material, the protective film material is evaporated and diffused and then deposited on the top dielectric to form a protective film. When the energy of the electron beam is concentrated on the surface of the target, high-speed deposition and high purity protective film formation are performed. It is possible. That is, unlike the reactive sputtering method described above, boron nitride is evaporated and deposited on the upper dielectric.

As shown, the protective film deposition apparatus 700 is connected through a chamber (Chamber, 720) that defines a region for performing the deposition process, and the pipe formed on one side of the chamber 720 from the outside of the chamber 720 And a vacuum holding part 740 for selectively vacuuming the chamber 720, a substrate fixing part 760 formed to face upward on the lower inner side surface of the chamber 720, and having the substrate 710 disposed thereon; And a gas inlet 780 formed on one side of the chamber 720 to supply a protective film material to be deposited on the substrate 710 on the substrate fixing part 760, and the substrate fixing part 760 in the chamber 720. And a thin film forming portion 780 formed in an upper region relative to the position of the substrate 710. The substrate 710 is a target to form a protective film. In this embodiment, the substrate 710 refers to a structure in which a transparent electrode, a bus electrode, and a top dielectric are formed on a front substrate.

Here, the substrate fixing part 760 is composed of a holder 760a for fixing the substrate fixing part 760 on the lower inner side surface of the chamber 720 and a substrate supporting part 760b provided with the substrate 710. In addition, the thin film forming unit 780 may include a synthetic quartz window 722 formed to face the substrate 710 on the substrate support 760b, a heater 724 formed adjacent to the synthetic quartz window 722, and a synthetic quartz window. 722 and a plurality of optical lamps 726 formed adjacent to the upper region of the heater 724.

As the protective film material, boron nitride is used. When the electron beam collides with the above-described protective film material, the boron nitride simultaneously evaporates and diffuses, and is then deposited on the top dielectric of the substrate 710 to form a protective film.

In the above-described embodiments, the protective film 195 is preferably deposited to a thickness of 100 to 1000 nanometers, and the reason is as described above. In the present embodiment, boron nitride is used as a material. However, after boron element is used as a material, the electron beam may be collided to evaporate and diffuse the boron, and then nitrogen may be injected into the nitride to be deposited on the top dielectric. Injecting nitrogen by injecting boron element as a material, there is an advantage that it is easy to control the content ratio of boron and nitrogen.

When the protective film in the form of a thin film is formed by the processes illustrated in FIGS. 6C and 6D, a protective film as shown in FIG. 2A is formed.

Hereinafter, another embodiment of the process of forming the protective film will be described with reference to FIG. 6E. The protective film 210 includes magnesium oxide (MgO) although not shown in addition to boron nitride. Here, the entire protective film 210 is provided as a thin film having a thickness of about 100 to 1000 micrometers, and boron nitride is provided in the shape of a nanotube in the protective film 210. In addition, some of the boron nanotubes 215 are provided to protrude to the outside of the thin film, and the electric field is concentrated on the protruding portions to increase the secondary electron emission effect.

Hereinafter, an embodiment of the method of forming the protective film having the above-described structure will be described.

First, a paste may be prepared by mixing boron nanotubes and magnesium oxide powder. In addition, the paste may be applied onto the first dielectric, dried, and baked to form a protective film. According to another embodiment, after the boron nanotubes are coated on the first dielectric, magnesium oxide may be applied by an electron beam deposition method, a sputtering method, or the like.

In the above-described process, a protective film structure as shown in Fig. 2B is formed.

According to another embodiment of the present invention, a protective film having a two-layer structure may be formed as shown in FIG. 2C. In this case, the first layer 225 is interviewed with the first dielectric 190, and the second layer 228 is provided on the first layer 225 and interviews the discharge space. The first layer 225 includes magnesium oxide in a thin film, and the second layer 228 includes boron nitride in a crystal form.

First, the first layer 225 is laminated with a thin film having a thickness of 100 to 500 nanometers. If the thickness of the first layer 225 is 100 nanometers or less, there is a possibility of misdischarge, and if it is 200 nanometers or more, problems in manufacturing process and cost may occur. Then, boron nitride is laminated on the first layer 225 to form a second layer 228. In this case, boron nitride may use a single crystal having a maximum value at about 215 nanometers of cathode luminescence, and preferably a hexagonal structure having excellent luminescence properties.

In this case, a spray coating method, a bar coating method, a brate coating method, a spin coating method, an ink jet method, a green sheet method, or the like may be used as the deposition method of the second layer 228. As described above, the second layer 228 may be formed on a part of the first layer 215 or may be formed in an irregular distribution in addition to the regular distribution on the first layer 215.

Subsequently, as shown in FIG. 6F, the address electrode 120 is formed on the rear substrate 110. Here, the back substrate 110 forms a glass for display substrate or soda-lime glass through a process such as milling or cleaning. Next, the address electrode 120 is formed on the back substrate 110. The address electrode 120 is formed of silver (Ag) or the like by a screen printing method, a photosensitive paste method or a photoetching method after sputtering.

As shown in FIG. 6G, the dielectric 130 is formed on the rear substrate 110 on which the address electrode 120 is formed. The dielectric 130 is formed of a material including a low melting point glass and a filler such as TiO ₂ by screen printing or laminating green sheets. Here, the lower dielectric 130 preferably has a white color to increase the luminance of the plasma display panel.

Subsequently, a partition wall is formed to distinguish each discharge cell from those shown in Figs. 6H to 6J. At this time, the partition material 140a comprises a mother glass and a filler. The mother glass may include PbO, SiO ₂ , B ₂ O _3, and Al ₂ O ₃ , and the filler may include TiO ₂ and Al ₂ O ₃ .

Next, the partition material 140a is patterned to form a partition wall. At this time, the patterning process is performed by covering a mask, exposing and then developing. That is, when the mask 145 is positioned and exposed to a portion corresponding to the address electrode, only the portion irradiated with light remains after the development and baking process to form a partition wall. In this case, when the photoresist component is included in the barrier material, the patterning of the barrier material may be easily performed.

Subsequently, as illustrated in FIG. 6K, phosphors 150a, 150b, and 150c are applied to a surface of the lower dielectric layer 130 in contact with the discharge space and a side surface of the partition wall. The phosphors are sequentially coated with phosphors of R, G, and B according to each discharge cell, and are applied by screen printing or photosensitive paste.

As shown in FIG. 6L, the upper panel is bonded to the lower panel with a partition wall therebetween and sealed, and after discharge of impurities therein, the discharge gas 160 is injected.

Hereinafter, the sealing process of the upper panel and the lower panel will be described in detail.

The sealing process is performed by screen printing, dispensing, or the like.

The screen printing method is a method of printing a sealing material having a desired shape by holding a patterned screen at a predetermined interval, placing the patterned screen on a substrate, and pressing and transferring the paste necessary for forming the sealing material. The screen printing method has advantages of simple production equipment and high use efficiency of materials.

And the dispensing method is a method of forming a sealing material by directly discharging a thick film paste on a board | substrate using air pressure using the CAD wiring data used for screen mask manufacture. The dispensing method has the advantage of reducing the manufacturing cost of the mask and having a large degree of freedom in the shape of the thick film.

7A is a view illustrating a process of bonding the front substrate and the rear substrate of the plasma display panel, and FIG. 7B is a cross-sectional view taken along line AA ′ of FIG. 7A.

As shown, as shown, the sealing material 600 is applied to the front substrate 170 or the back substrate 110. Specifically, the substrate is printed or dispensed at the same time with a predetermined interval at the outermost side of the substrate and applied.

Next, the sealing material 600 is fired. In the firing process, the organic material included in the sealing material 600 is removed, and the front substrate 170 and the rear substrate 110 are bonded to each other. In this firing process, the width of the sealing material 600 may be widened and the height may be low. In the present embodiment, the sealing material 600 is printed or coated, but may be formed in the form of a sealing tape and adhered to the front substrate or the rear substrate.

And the characteristic of a protective film etc. is improved at predetermined temperature through an aging process.

Then, a front filter can be formed on the front substrate. The front filter is provided with an electromagnetic shielding film for shielding electromagnetic interference emitted from the panel to the outside. The electromagnetic shielding film may be patterned in a specific form in order to shield electromagnetic waves while ensuring the visible light transmittance required by the display device. In addition, a near infrared shielding film, a color correction film, an antireflection film, and the like may be formed on the front filter.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.

Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims.

The plasma display panel according to the present invention described above can preserve the characteristics of the protective film even after long-term use.

1 is a view showing a discharge cell structure of an embodiment of a plasma display panel according to the present invention;

FIG. 2 is a diagram illustrating one embodiment of a passivation layer of the plasma display panel shown in FIG. 1;

3 is a view showing a driving device and a connecting portion of a plasma display panel according to the present invention;

4 is a view showing a substrate wiring structure of a typical tape carrier package,

5 is a view schematically showing another embodiment of a plasma display panel according to the present invention;

6A to 6L illustrate an embodiment of a method of manufacturing a plasma display panel according to the present invention.

7A is a view illustrating a process of bonding the front substrate and the rear substrate of the plasma display panel;

FIG. 7B is a cross-sectional view taken along the line AA ′ of FIG. 7A.

<Explanation of symbols for the main parts of the drawings>

110: back substrate 120: address electrode

130: lower plate dielectric 140: partition wall

150a, 150b, 150c: phosphor 160: discharge gas

170: front substrate 180a, 180b: transparent electrode

180a ', 180b': Bus electrode 190: Top dielectric

195, 200, 210, 220: protective film 205.215: boron nitride

225: first layer 228: second layer

320: panel 330: driving substrate

340: TCP 341: driving driver chip

342: flexible substrate 343: wiring

350: FPC 360: heat sink

Claims (18)

A first panel on the first substrate, the first panel including at least one scan electrode, a sustain electrode, a first dielectric, and a protective film including boron nitride (BN); And A second panel bonded to the first panel with the barrier ribs interposed therebetween, the second panel including at least one address electrode, a second dielectric, and phosphors formed on side surfaces of the barrier rib and the second dielectric on a second substrate; Plasma display panel comprising a. The method of claim 1, wherein the protective film, A plasma display panel comprising boron nitride deposited by electron beam deposition or sputtering. The method of claim 1, wherein the protective film, A plasma display panel, wherein boron is deposited by an electron beam deposition method or a reactive sputtering method in a nitrogen atmosphere. The method of claim 1, wherein the protective film, Plasma display panel further comprises magnesium oxide. The method of claim 1, The protective film is provided in a thin film shape, the boron nitride is a plasma display panel, characterized in that provided in the thin film in the form of a nano tube (nano tube). The method of claim 1, The protective film has a two-layer structure, wherein the first layer in contact with the first dielectric material includes magnesium oxide, and the second layer includes boron nitride. The method of claim 6, wherein the first layer, Plasma display panel, characterized in that provided in the shape of a thin film. The method of claim 7, wherein the boron nitride, And a single crystal on the thin film. The method of claim 8, wherein the boron nitride, A plasma display panel having a hexagonal structure. Forming at least one scan electrode, a sustain electrode and a first dielectric on the first substrate; Forming a protective film including boron nitride on the first dielectric; Forming at least one address electrode, a second dielectric and a partition on the second substrate; Forming a phosphor on the side of the partition and the second dielectric; And And bonding the first substrate and the second substrate together. The method of claim 10, wherein the forming of the protective film, And injecting nitrogen while evaporating boron to deposit boron nitride on the first dielectric. The method of claim 10, wherein the forming of the protective film, And evaporating boron nitride to deposit the boron nitride on the first dielectric. The method of claim 10, wherein the forming of the protective film, A method of manufacturing a plasma display panel further comprising magnesium oxide to form a protective film. The method of claim 10, wherein the forming of the protective film, A method of manufacturing a plasma display panel, wherein boron nitride forms a thin film provided in the shape of a nanotube. The method of claim 10, wherein the forming of the protective film, And forming a first layer having magnesium oxide on the first dielectric and forming a second layer having boron nitride on the first layer. The method of claim 15, wherein the first layer, Method for manufacturing a plasma display panel, characterized in that provided in the shape of a thin film. The method of claim 16, wherein the boron nitride, A plasma display panel manufacturing method, characterized in that provided on the thin film in the form of a single crystal. The method of claim 16, wherein the boron nitride, A method of manufacturing a plasma display panel, characterized by having a hexagonal structure.

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