KR20090085675A - Sputtering target - Google Patents

Abstract

A sputtering target is provided to prevent a gap being formed deep from the target surface whereby the end split target material has a specific shape. A sputtering target comprises a backing plate, an end split target material(43), and a division target material(44). The backing plate has an approximately convex profile composed of the thick peripheral part and the thin central part. The end split target material has an L-shaped profile including thick and thin parts and is arranged to contact the end of the backing plate, thereby making the sputtering target surface even. A split target material except the end split target material is formed in a flat plate shape comprising thin parts and arranged horizontally in the center of the backing plate.

Description

Sputtering Target {SPUTTERING TARGET}

The present invention relates to a sputtering target in which a plurality of divided target materials and a backing plate are joined via a bonding material.

Conventionally, the sputtering method which can control a film thickness and a component easily is widely used as a film-forming method of electronic and electrical component materials, such as a semiconductor, for example. The sputtering target used in such a sputtering method is generally comprised by joining the target material which consists of a material to form a thin film, and the backing plate which consists of a material excellent in electroconductivity and thermal conductivity through a bonding material.

In recent years, the demand for film-forming on a large substrate by sputtering especially increases, and the sputtering target is also enlarged by this. However, depending on the material, a sputtering target may be difficult to enlarge in terms of prevention of cracking or quality maintenance. In order to respond to such a demand for larger sputtering targets, for example, as shown in Patent Literatures 1 and 2, sputtering is performed by dividing a target material into a plurality of target material small pieces and arranging them on a backing plate. The target is manufactured.

In order to reduce the generation | occurrence | production of the chipping, the particle | grains, and the arcing which are caused by the adjacent site | part between the split target material, in this target material small piece, what is called a split target material, the clearance gap is formed in the part which several split target material adjoins mutually. The division target material is disposed so as to form a shape, and is joined to the backing plate. On the other hand, since a bonding material is a fluid at the time of joining a target material and a backing plate, a bonding material flows in not only the joining surface of a target material and a backing plate, but also the said clearance gap, and harden | cures after a fixed time passes. If the hardened bonding material exists in the gap formed in the adjacent portion of such a split target material, the bonding material may be peeled off during film formation, resulting in deterioration of the quality of the resulting film. Therefore, after bonding the division | segmentation target material to the backing plate, the hardened | cured bonding material which exists in this clearance gap was mechanically removed.

However, especially as shown in patent document 2, when it is a sputtering target comprised from the split target material from which mutual thickness differs, the split target material thicker than the other split target material arrange | positioned at the edge part of a sputtering target, and Since the gap formed between the split target material with a thin thickness adjacent thereto is embedded deeply from the target surface, the bonding material takes time to remove the bonding material, and the bonding cured only in the gap even after the removal process. There was a problem that ash was likely to remain.

Patent Document 1: Japanese Patent Application Laid-Open No. 2002-363738

Patent Document 2: Japanese Patent Application Laid-Open No. 2003-155563

[Initiation of invention]

[Problem to Solve Invention]

Thus, when a bonding material remains and hardens | cures in the clearance gap from the target surface, these bonding materials also sputter | spatter during the sputtering process performed at film-forming, and there exists a possibility that the quality of the film | membrane formed may deteriorate. In addition, the remaining bonding material may cause nodule or arcing.

Therefore, in view of such a phenomenon, in the sputtering target comprised by the division target material from which mutual thickness differs, the sputtering which can remove a bonding material easily from the clearance gap formed in the adjacent part of each division target material is sputtering. The task is to provide a target.

[Means for solving the problem]

The present invention has been found in order to achieve the above-described problems and objects in the prior art, and the sputtering target of the present invention integrates a target material and a backing plate composed of a plurality of divided target materials via a bonding material. As a sputtering target bonded by

The backing plate is formed in a substantially convex cross-section having an end portion between the central portion of the thick portion and the outer circumferential portion of the thin portion,

An end splitting target material disposed at the end of the sputtering target is formed in the split target material in a substantially L-shaped cross section provided with a thin portion and a thick portion,

Moreover, the division target material other than the said end target material is formed in the flat form which consists of a thin part,

The end splitting target material is arranged to abut the end of the backing plate so that the surface of the sputtering target is approximately the same surface, and the splitting target material other than the end target material is disposed in the center of the backing plate in a planar manner. It is characterized by being.

In addition, in the plurality of divided target materials, a gap of 0.1 to 0.6 mm may be formed between adjacent portions adjacent to each other. In addition, the width W _a in the thin portion of the end split target material may be 2 to 50 mm, and the width W _b in the thick portion of the end split target material may be 40 to 500 mm.

In addition, the division target material may be a metal oxide containing In or Sn as a main component.

[Effects of the Invention]

According to the sputtering target of this invention, even if the sputtering target is comprised from the split target material from which mutual thickness differs, since the end split target material located in the edge part of a sputtering target has a specific shape, it is between adjacent parts of each split target material. In the gap to be formed, the gap which is embedded deeply from the target surface is not formed. Therefore, in any of the above gaps, the bonding material introduced at the time of joining the division target material and the backing plate can be easily removed, and thus the amount of bonding material remaining in these gaps can be significantly reduced.

Therefore, when using the sputtering target of this invention, the sputtering process which suppressed generation | occurrence | production of particle | grains and arcing can be implement | achieved, and the film-forming which has a stable characteristic can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the shape of the division target material which comprises the sputtering target of this invention. (a) is a top view, (b) is sectional drawing.

FIG. 2: is a perspective view of the backing plate which comprises the sputtering target of FIG.

FIG. 3: is a perspective view of the division | segmentation target material which comprises the sputtering target of FIG.

4 is a view showing the shape of another split target material constituting the sputtering target of the present invention, (c) 'and (d)' are top views, and (c) '' and (d) '' are cross-sectional views. to be.

5 is a perspective view of an end split target material.

Fig. 6 is a partially enlarged cross-sectional view of the sputtering target of Fig. 1 (b).

Fig. 7 is a partially enlarged cross-sectional view of Fig. 1 (b) after the bonding material removal process.

It is a figure which shows an example of the shape of the division target material which comprises the conventional sputtering target. (e) is a top view, (f) is sectional drawing.

Fig. 9 is a partially enlarged cross-sectional view of a conventional sputtering target of Fig. 8 (f).

Fig. 10 is a partially enlarged view of Fig. 8 (f) after the bonding material removal process.

[Description of the code]

One… Sputtering Target of the Invention

2… Backing plate

4… Gaps formed between adjacent portions where the split target materials 11 to 12 are adjacent to each other

11... End split target material

11a... Thin section of the end splitting target material 11

11b... The thick part of the edge part split target material 11

11c... End portion formed in the end split target material 11

12... Split target material other than the end split target material 11

13... Bonding material

15... Thickening part of backing plate (2)

16... Thin part of the backing plate (2)

17... End part formed in the backing plate 2

30... Upper surface of the end splitting target material 11

41... Conventional Sputtering Target

42... Backing plate

43.. End split target material

44... Split target material other than the end split target material 43

45... Bonding material

50, 51, 50 ', 51'... Gaps formed between adjacent portions where the split target materials 43 to 44 are adjacent to each other

53, 53 '... Particularly in the gaps 50 'and 51', the bonding material 45 tends to remain.

60... End stretch portion of the split target material 44

W _a … Width in the thin part 11a of the edge part split target material 11

W _b … Width in the thick part 11b of the edge part split target material 11

R… Approximately L-shaped corner part of the edge part split target material 11

Best Mode for Carrying Out the Invention

EMBODIMENT OF THE INVENTION Hereinafter, embodiment (example) of this invention is described in detail based on drawing. 1: shows the shape of the sputtering target 1 which is Example 1 of the sputtering target of this invention, FIG. 1 (a) is a top view, FIG. 1 (b) is sectional drawing in the VV line of FIG. .

FIG. 2 shows a perspective view of the backing plate 2 constituting the sputtering target 1 of FIG. 1, and FIG. 3 shows a perspective view of the split target materials 11 to 12 constituting the sputtering target 1 of FIG. 1. Indicates. In FIG.1 (a) and (b), 1 has shown the sputtering target of this invention as a whole. Although the sputtering target 1 has the shape of an elongate shape as a whole, the shape of the sputtering target of this invention is not specifically limited to this, For example, FIG.4 (c) 'or (d)' It may have a shape such as In addition, in FIG. 4, the same code | symbol is attached | subjected to the same structural member, and the detailed description is abbreviate | omitted.

Although FIG.4 (c) 'is a long target, the split target material 11-12 shown in FIG. 1 is formed in two steps. Fig. 4 (c) 'is a cross sectional view taken along the line Y ₁ -Y ₁ in Fig. 4 (c)'. FIG.4 (d) 'is a substantially square target, Comprising: The division | segmentation target material 11-12 shown in FIG. 1 is formed in three steps. 4D is a cross-sectional view taken along the Z ₁ -Z ₁ line in FIG. 4D.

The sputtering target 1 is comprised from the plate-shaped backing plate 2 and the division target materials 11-12 which were joined to the upper surface of the backing plate 2 via the bonding material 13.

In this case, the material of the division target materials 11-12 is not specifically limited, Metal oxide whose main component is In or Sn, such as Indium-Tin-Oxide (ITO), chromium, molybdenum, ZAO (aluminum-zinc) Oxide), magnesium oxide, and the like. Especially, the metal oxide which has In or Sn as a main component which is a material employ | adopted for the film-forming for flat panel displays which strongly requires the enlargement of a target size is suitable.

In addition, as a material of the backing plate 2, it does not specifically limit, Pure copper excellent in electroconductivity and thermal conductivity, a copper type alloy, etc. are used suitably.

As a material of the bonding material used when joining the division target materials 11-12 and the backing plate 2, it depends also on the material of the division target materials 11-12 and the backing plate 2, and is not specifically limited. For example, soldering alloys, such as In type | system | group, Sn type | system | group, Zn type | system | group, a brazing material, resin, etc. are used.

The backing plate 2 is provided with the central part 15 of a thick part, and the outer peripheral part 16 of a thin part in the joining side of the division | segmentation target material 11-12, and the center part (these thick parts) of these thick parts ( Since it has the edge part 17 between 15) and the outer peripheral part 16 of a thin part, it is formed in the substantially convex shape of cross section as the whole backing plate 2. As shown in FIG.

In addition, the division target materials 11-12 are comprised from the edge division target material 11 arrange | positioned at the edge part of a sputtering target, and the division target material 12 other than an edge division target material, For example, FIG. In the case of the elongate sputtering target shown to 1 (a) and (b), the some split target material 12 is arrange | positioned between the two end split target materials 11 arrange | positioned at both ends.

The end split target material 11 is provided with the thin part 11a and the thick part 11b so that it may be formed in substantially L shape in cross section in the sectional view in the VV line of FIG. 1 (a), and this thin part ( The end part 11c is formed in the inner side which 11a) and the thick part 11b couple | bond.

As also shown in perspective view of the end dividing the target material 11 of Figure 5, the end thin portions (11a) of the divided target material 11 has a thickness (d _1), the inner side is the height (h ₁₎ of the after-wall (11b) Have Therefore, the thickness of the thick portion 11b is d ₁ + h ₁ . The end split target material 11 has a thick portion 11b having such a thickness d ₁ + h ₁ , so that the target material having a sufficient thickness at the end, which is a portion where the erosion progression of the sputtering target 1 is rapid. It becomes possible to arrange.

Moreover, the width W _a in the thin part 11a of the edge part split target material 11 is 2-50 mm normally, Preferably it is 5-10 mm. Further, the split end target width (W _b) of the wall portion (11b) after the material 11 is generally 40~500mm. If W _a and W _b are within this range, the thick portion 11b of the end split target material 11 can be suitably matched to the region of the end portion of the sputtering target 1 in which erosion advances quickly. In the division target material 11, the useless part which is not formed into a film and is discarded can be effectively reduced.

Moreover, it is preferable that the substantially L-shaped corner part R formed in the edge part split target material 11 forms the curved surface whose curvature radius r becomes 0.1-3 mm. If the substantially L-shaped corner portion R is such a shape, it becomes easy to suppress cracks and cracks generated when the end split target material 11 is produced.

The division target material 12 other than the edge division target material is formed in the shape of a flat plate made of a thin portion, and has a thickness d ₂ continuously.

Moreover, the edge process may be performed as needed in the site | parts which are preferable in these division | segmentation target materials 11-12.

Here, as shown in Fig. 1 (b), ends inside the height of the wall portion (11b) after the split target material (11) (h _1), and a central portion 15 of the thick portions and then in the backing plate (2) The height h ₂ of the convex portion of is substantially the same, and the thickness d ₁ of the thin portion 11a of the split target material 11 and the thickness d ₂ of the split target material 12 are substantially the same. .

Accordingly, the end split target 11 is disposed so that the end 11c of the end split target 11 abuts the end 17 of the backing plate 2, and the split target material other than the end split target material ( The surface of the sputtering target 1 becomes substantially the same surface by arrange | positioning 12 to the center part 15 of the thick part of the backing plate 2 planarly.

In addition, the thickness d ₃ of the outer peripheral part 16 of the thin part of the backing plate 2 is not specifically limited, For example, when the material of the backing plate 2 is copper from a viewpoint of strength, It is preferable to set it as 10-50 mm.

Thus, by arranging the division target materials 11-12 in the backing plate 2, the division target material arrange | positioned at the center part of the sputtering target 1 becomes thin, and the division target arrange | positioned at the edge part of the sputtering target 1 is carried out. Ash becomes thick Therefore, the thickness of the target material becomes thick at the end of the sputtering target 1, which is a portion where the erosion progresses quickly, and the thickness of the target material can be thinned in the center portion of the sputtering target 1, where the relatively erosion progresses slowly. Therefore, an efficient film forming process can be realized.

In addition, you may provide an unevenness | corrugation on the surface of the sputtering target 1, what is called a sputter | spatter surface like the target of Unexamined-Japanese-Patent No. 06-172991 or Unexamined-Japanese-Patent No. 2004-83985 as needed.

In the division target materials 11 to 12 of the present invention, a gap 4 is formed between adjacent portions adjacent to each other.

When the sputtering process is performed, the target material is heated and expands by ions being hit by the target material. At this time, when there is no gap 4 between adjacent portions of the split target materials 11 to 12, chipping or the like occurs from the adjacent target material when the split target material expands, so that the particles or arcing It can also be the cause of occurrence. Moreover, even when some distortion occurs at the time of attachment of the said target material, chipping etc. become easy to generate | occur | produce.

However, by forming the gap 4 between the adjacent portions of the divided target materials 11 to 12 in this way, the warping at the time of expansion and adhesion of the target material can be alleviated by this gap, thereby chipping. Not only can be suppressed, but also the occurrence of particles or arcing due to this can be suppressed.

As shown in FIG. 6, which is a partially enlarged cross-sectional view of FIG. 1B, such a gap 4 has the same size D and depth h ₃ , and the size D is specifically, Is 0.1 to 0.6 mm, preferably 0.2 to 0.4 mm. If it is the size of this range, generation | occurrence | production of chipping, a particle, or arcing can be suppressed effectively. The depth h ₃ may be a depth enough to remodel the bonding material in an amount capable of sufficiently maintaining the adhesive force over time in the sputtering process, and is particularly limited. In general, the thickness d ₂ of the divided target material 12 is about 0.05 to 1.0 mm.

Fig. 6 is a partially enlarged cross-sectional view of Fig. 1 (b) and immediately after bonding the backing plate 2 and the split target materials 11 to 12 via the bonding material 13, that is, the sputtering target 1 before the bonding removal treatment. ) Is a cross-sectional view.

The bonding material 13 flows into the molten state on the upper surface of the backing plate 2 heated beforehand normally. From the upper surface of the bonding material 13 which flowed in, the division | segmentation target materials 11-12 which were preheated previously are mounted in a predetermined position. In this state, the bonding material 13 is cooled and cured to room temperature to complete the bonding between the backing plate 2 and the division target materials 11 to 12.

Immediately after the backing plate 2 and the split target materials 11 to 12 are bonded, that is, before the hardening of the bonding material 13, the bonding material 13 is a fluid, so the backing plate 2 and the split target material The bonding material 13 flows into not only the joining surface with (11-12) but also the clearance gap 4 formed between mutually adjacent adjacent parts of the division target material 11-12. For this reason, the site | part 30 which the bonding material which flowed in into the clearance gap 4 exists in the surface of the sputtering target 1 exists. However, if such a part 30 exists on the surface of the sputtering target 1, this bonding material will sputter | spatter simultaneously with a target material at the time of film-forming, and will cause nodule or arcing, or this bonding material will adhere | attach on film-forming, There is a fear that the quality of the obtained film is deteriorated. Therefore, in order to remove the bonding material which flowed into the clearance gap 4, after bonding the backing plate 2 and the division target materials 11-12, the bonding material removal process is performed. The bonding material 13 which flowed into the clearance gap 4 remove | eliminates the part interposed between the division target materials 11-12, and removes until the thickness which does not exist the bonding material which directly contacts these division target materials exists. Even if the bonding material 13 remains on the backing plate 2 located at the bottom of the gap 4, for example, the above defects can be sufficiently prevented, but the bonding material in the gap 4 It is preferable to remove until (13) does not exist at all.

The bonding removal treatment method is not particularly limited, and for example, a removal method using an iron plate to which ultrasonic waves have been added is adopted.

FIG. 7 is a partially enlarged cross-sectional view of FIG. 1B as shown in FIG. 6, and is a cross-sectional view of the sputtering target 1 after removing the bonding material 13 introduced into the gap 4 in FIG. 6. 4 shows that the bonding material interposed between the split target materials 11 to 12 that has flowed into 4) is sufficiently removed. Thus, since the clearance gap 4 is located between the thin part 11a of the edge part division target 11 and the adjoining part with the division | segmentation target material 12, the thickness of a target material is thin and it flowed in into the clearance gap 4. It is easy to remove a bonding material easily in a short time. Moreover, since the clearance gap which the other division | segmentation target material 12 is located between adjacent parts adjacent to each other is also provided in the same size (D) and depth as the clearance gap 4, the bonding material which flowed in all these clearance gaps has the same processing time. Can be removed at a time, and the bonding material removal process can be performed efficiently.

FIG. 8: shows the shape of the sputtering target 41 of the comparative example 1 which is a conventional sputtering target, FIG. 8 (e) is a top view and FIG. 8 (f) is sectional drawing in the XX line of FIG. 8 (e). . FIG. 9 is a partially enlarged view of FIG. 8 (f), illustrating a cross-sectional view of the sputtering target 41 immediately after bonding the backing plate 42 and the division target materials 43 to 44 via the bonding material 45. It is shown.

The sputtering target 41 of FIG. 8 has a long shape like the sputtering target 1 of FIG. The sputtering target 41 is comprised from the plate-shaped backing plate 42 and the division target materials 43-44 joined to the upper surface of the backing plate 42 via the bonding material 45. As shown in FIG.

In addition, the division | segmentation target material is comprised from the edge parting target material 43 arrange | positioned at the edge part of the sputtering target 41, and the divisional target material 44 other than the edge parting target material 43. As shown in FIG.

Therefore, even if it is a sputtering target of this invention or a conventional sputtering target, the basic structure of a sputtering target does not have a big difference. However, as will be described below, the shape of the end split target is greatly different.

As shown in FIG. 8 (f), in the case of the conventional sputtering target 41, the end split target material 43 disposed at the end of the sputtering target 41 constitutes the sputtering target 1 of the present invention. since the end not split target, but is provided with a wall portion after the material 11, and similarly the thickness (d _4), not having a thin-wall portion having an end portion divided target material 11, a rectangular shape in its cross-section shape as a whole, It is formed.

On the other hand, the end divided target material (43) dividing the target material (44) other than, the flat plate made of a thin-wall portion of the divided target material thickness (d ₅₎ Like 12 of the sputtering target (1) of the present invention the To form.

Thus, also in the conventional sputtering target, the division | segmentation target material 43 was arrange | positioned so that the thickness of a target material may become thick at the edge part of the sputtering target 41 which is a site | part with which erosion progresses quickly. In addition, by forming the gaps 45 and 50 between the adjacent portions of the divided target materials 43 to 44, the distortion during expansion and adhesion of the target material was alleviated.

However, since the end segmentation target material 43 has a rectangular cross section, the shape of the gap 51 formed between the end segmentation target material 43 and the adjacent portion where the other segmentation target material 44 adjoins is The different division target materials 44 differ from the shape of the gap 50 formed between adjacent portions adjacent to each other.

That is, the depth of an end partition target material 43 and the divided target material because the thickness of the 44 different, the gap (50) depth (h _4), the gap (51) than in the as shown in Fig. 9 ( h ₅ ) is deeper by the portion where the end split target material 43 is thicker than the split target material 44. In any of these gaps 50 to 51, the bonding material 45 flows in at the time of joining the backing plate 42 and the split target materials 43 to 44, so that the bonding material removing process must be performed. .

By the way, if the depth which the clearance | gap 51 has is _5, there exists a possibility that the bonding material 45 interposed between the division | segmentation target materials 43-44 may not fully be removed even if a bonding removal process is performed. That is, in the vicinity of the deepest portion 52 of the gap 51, the bonding material interposed between the split target materials 43 to 44 tends to remain easily. In particular, it is very difficult to remove the bonding material 45 located at the portion 53. For example, as shown in FIG. 10 (g) which is sectional drawing of the sputtering target 41 after removing the bonding material 45 which flowed in into the clearance gap 50-51 in FIG. 9, even after a bonding material removal process is carried out. In the vicinity of the part 52 of 51, the bonding material 45 located in the part 53 remains.

On the other hand, FIG. 10 (h) shows the sputtering after removing the bonding material 45 in the case where the divided target material 44 forms the protruding portion 60 at a portion adjacent to the end divided target material 43. It is sectional drawing of the target 41. The gaps 50 'and 51' are cases where the sizes D of the gaps 50 and 51 are smaller, respectively, but the portion 52 'of the gap 51' formed in this case is shown in FIG. It becomes the state which was embedded more deeply from the target surface than the site | part 52 of the clearance gap 51 shown to g), and a bonding removal process is accompanied with more difficulty. That is, the bonding material 45 located at the site 53 'is more difficult to remove than the bonding material 45 located at the site 53, and the bonding material 45 located at the site 53' near the site 52 'is difficult to remove. The ash 45 tends to remain more easily.

As shown in Figs. 10G and 10H, when gaps 50 to 51 or 50 'to 51' having different depths are formed, the bonding material 45 introduced into these gaps is removed. It is necessary to extend the bonding removal processing time in accordance with the gap 51 or 51 'of the deeper side, requiring different time.

On the other hand, as described above, in the sputtering target of the present invention, since the end split target material is formed in substantially L-shaped cross section, the size and depth of the gap formed between the adjacent portions where the plurality of split target materials are adjacent to each other are determined. It becomes possible to unify, and it is possible to collectively remove the bonding material which flowed in all the gaps by a series of bonding removal processes, which not only shortens the bonding removal processing time but also improves the quality of the film formation obtained. Can be.

Example 1

Figs. 1 to 3, Fig. 5 through Fig., Oxygen-free copper-made backing plate (2) as shown in Fig. 7, the _{(380 × 2000mm, h 2:} : 5mm, d 3 7mm), was heated in advance using gayeoldae. Next, the bonding material 13 which consists of In was melt | dissolved, and it flowed in on the backing plate.

Further, the end splitting target material 11 made of ITO (upper surface 30: 300 x 100 mm, W _a : 20 mm, W _b : 80 mm, d ₁ : 7 mm, h ₁ : 5 mm, radius of curvature r in R: 0.5 piece) and four pieces of divided target materials 12 (300 × 425 mm, d ₂ : 7 mm) were produced. After placing these division | segmentation target materials 11-12 in the predetermined position from the upper surface of the backing plate 2 according to FIG. 1, the bonding material 13 was fully cooled and hardened by natural cooling.

At this time, the size D of the gap 4 was 0.3 mm.

The bonding removal process was performed using the sputtering target 1 which the bonding material 13 hardened | cured. Specifically, the bonding material was removed using a thin iron plate to which ultrasonic waves were added, and the target after the removal was finished using a # 320 abrasive paper.

About the sputtering target 1 after a bonding removal process, the quantity of the bonding material which remain | survives in the site | part 23 of the clearance gap 4 was observed using the microscope. As a result, it was confirmed that the removed bonding material was 0.5 g (for 5 portions of the gap 4), and the remaining bonding material in the site 23 did not exist.

Comparative Example 1

As it is shown in Fig. 8 to Fig 9, copper-made backing plate (42) (380 × 2000mm, h 2: 5mm, d 3: 12mm) using, ITO end divided target material (43) (300 × 80mm composed of , d _4: 12mm), the second body, and dividing the target material (44) (300 × 435mm, d 5: 7mm) of 4 as a non-example 1 production body, the backing plate 42 and the divided target material (43-44) were bonded together and the sputtering target 41 was obtained.

At this time, none of the sizes D of the gaps 50 to 51 was 0.3 mm.

Subsequently, the bonding removal process was performed like Example 1, and the quantity of the bonding material which remain | survives in the site | part 52 of the clearance gap 51 with respect to the sputtering target 41 after the bonding removal process was observed using the electronic balance. . As a result, the amount of the remaining bonding material in the removed bonding material 1.5g (for a gap of 5 places) and the portion 52 was 1.5g, and it was confirmed that the bonding material interposed between the split target materials 43 to 44 remained. It became.

Claims (5)

As a sputtering target which integrally bonded the target material and backing plate which consist of several division target material through a bonding material, The backing plate is formed in a substantially convex cross-section having an end portion between the central portion of the thick portion and the outer circumferential portion of the thin portion, Of the split target materials, an end split target material disposed at an end portion of the sputtering target is formed in a substantially L-shaped cross section provided with a thin portion and a thick portion, Moreover, the division target material other than the said end target material is formed in the flat form which consists of a thin part, The end splitting target material is arranged to abut the end of the backing plate so that the surface of the sputtering target is approximately the same surface, and the splitting target material other than the end target material is disposed in the center of the backing plate in a planar manner. Sputtering target, characterized in that. The method of claim 1, The plurality of divided target materials are formed with a gap of 0.1 to 0.6 mm between adjacent portions adjacent to each other. The method according to claim 1 or 2, A sputtering target, wherein the width W _a in the thin portion of the end split target material is 2 to 50 mm. The method according to any one of claims 1 to 3, A sputtering target, wherein the width W _b at the thick portion of the end split target material is 40 to 500 mm. The method according to any one of claims 1 to 4, Said split target material is a metal oxide containing In or Sn as a main component, The sputtering target characterized by the above-mentioned.

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