KR20170001682U - Backing plate-sputtering target assembly - Google Patents

Backing plate-sputtering target assembly Download PDF

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Publication number
KR20170001682U
KR20170001682U KR2020150007187U KR20150007187U KR20170001682U KR 20170001682 U KR20170001682 U KR 20170001682U KR 2020150007187 U KR2020150007187 U KR 2020150007187U KR 20150007187 U KR20150007187 U KR 20150007187U KR 20170001682 U KR20170001682 U KR 20170001682U
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KR
South Korea
Prior art keywords
sputtering target
backing plate
plate
bonding layer
target
Prior art date
Application number
KR2020150007187U
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Korean (ko)
Inventor
강민호
양승호
윤원규
Original Assignee
희성금속 주식회사
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Priority to KR2020150007187U priority Critical patent/KR20170001682U/en
Publication of KR20170001682U publication Critical patent/KR20170001682U/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a backing plate and a sputtering target bonded to the backing plate for improving the use efficiency of a target used in a sputtering process.

Description

[0001] BACKING PLATE-SPUTTERING TARGET ASSEMBLY [0002] BACKGROUND [0003]

The present invention relates to a backing plate and a sputtering target bonded to the backing plate for improving the use efficiency of a target used in a sputtering process.

In a manufacturing industry such as semiconductors and displays, a sputtering process is used in which ions are impacted on a target to form a film on the substrate with atoms or molecules of the protruding target, in order to form a uniform thin film capable of exhibiting desired electrical characteristics. The target used in the sputtering process may be a thin film having the same physical properties as those of the sputtering target, using ceramics, metal, or the like, depending on the purpose of use.

Such a sputtering target is bonded to a backing plate that is standardized to meet the specification of a sputter and is used in a sputtering process. There is a problem that it is difficult to change the thickness of the target because the sputter efficiency varies depending on the distance between the target and the substrate bonded to the backing plate in the sputtering process.

The sputtering target is consumed in a specific region by ion bombardment (plasma) generated during the sputtering process, and has a shape consumed by a predetermined depth Dmax from one exposed surface of the sputtering target 3 as shown in FIG. At this time, about 30% by weight of the sputtering target is consumed, and the remaining target portion after use can not be used for the sputtering process, so it must be discarded. As a result, the target used for sputtering is not economical because it not only lowers the efficiency of use but also discards the remaining 70 wt% of the target after use.

Accordingly, research for increasing the efficiency of use of the sputtering target is still proceeding.

In order to solve the above problems, the present invention aims to provide a backing plate-sputtering target assembly capable of increasing the efficiency of use of a sputtering target.

In order to achieve the above object, the present invention provides a sputtering target comprising: a backing plate having a first surface facing a sputtering target; A first bonding layer present on a first side of the backing plate; An auxiliary plate joined to the first surface of the backing plate by the first coupling layer; A second bonding layer present on a first side of the assisting plate; And a sputtering target bonded to the first surface of the assisting plate by the second bonding layer.

The present invention further improves the use efficiency and economical efficiency of the target as compared with the sputtering target conventionally used by further joining the auxiliary plate between the backing plate and the sputtering target.

In addition, since the sum of the thickness of the auxiliary plate and the sputtering target bonded to the auxiliary plate is equal to the thickness of the conventional sputtering target, the distance between the target and the substrate is maintained during the sputtering process and does not affect the sputter efficiency.

The embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. It should be understood, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope. Since the present invention may allow other equally effective embodiments.
1 is a side view of a conventional backing plate-sputtering target assembly.
FIG. 2 is a conventional backing plate-sputtering target assembly, which is used in a sputtering process to form a consumable portion on one surface of a target.
3 is a side view of a backing plate-sputtering target assembly according to the present invention.
In order to facilitate understanding, the same reference numerals are used to denote the same components in the drawings. It is contemplated that the configuration disclosed in one embodiment may be utilized in other embodiments without specific description.

Referring to FIG. 1, a conventional backing plate-sputtering target assembly 4 is used in a sputtering process by bonding a backing plate 1 and a sputtering target 3 with a bonding layer 2. In the sputtering process, since the distance between the target 3 bonded to the backing plate 1 and the substrate on which the thin film is formed affects the sputter efficiency, the thickness of the target 3 bonded to the standardized backing plate 1 L) is not easy to change. In addition, in the sputtering process, the target 3 consumes only about 30% by weight as shown in FIG. 2, and the remaining portion (about 70% by weight) is discarded, so that the use efficiency of the sputtering target 3 is low.

Accordingly, it is an object of the present invention to provide a backing plate-sputtering target assembly capable of maintaining the entire thickness of a backing plate and a sputtering target bonded to the backing plate, thereby improving the use efficiency of the sputtering target without changing the sputtering efficiency.

Referring to FIG. 3, the backing plate-sputtering target assembly 40 of the present invention further includes a new auxiliary plate 20 capable of bonding the sputtering target 30 onto the backing plate 10, which has been conventionally standardized . At this time, the thickness (L2) of the assisting plate 20 may be adjusted to relatively reduce the thickness L1 of the final sputtering target 30. Therefore, the backing plate-sputtering target assembly 40 can reduce the amount of the bonded sputtering target 30 compared to the conventional sputtering target 3, thereby improving the economical efficiency and improving the use efficiency of the target 30 Can be increased compared with the conventional sputtering target (3). In addition, even when the backing plate-sputtering target assembly 40 is used in the sputtering process, the efficiency of the existing sputtering can be maintained, and a thin film of the same level as the thin film formed using the conventional backing plate-sputtering target assembly 4 is formed can do.

The backing plate-sputtering target assembly 40 according to the present invention is, in a preferred embodiment, a backing plate 10 having a first surface facing the sputtering target 30; A first bonding layer (11) present on a first side of the backing plate (10); An assisting plate (20) joined to the first surface of the backing plate (10) by the first bonding layer (11); A second bonding layer (21) present on a first side of the assisting plate (20); And a sputtering target 30 which is joined to the first surface of the assisting plate 20 by the second bonding layer 21. Hereinafter, the backing plate-sputtering target assembly 40 of the present invention will be described in detail.

The backing plate 10 has a first surface opposed to the sputtering target 30 so that the assistant plate 20 and the sputtering target 30 can be sequentially stacked on the first surface of the backing plate 10 . The backing plate 10 can be made of any conventional backing plate known in the art without limitation and can be made of copper (Cu) or titanium (Ti), for example. The thickness and area of the backing plate 10 may be the same as those of the backing plate 1 used in the related art.

The first bonding layer 11 is present on the first side of the backing plate 10 and is a layer for joining the backing plate 10 and the supporting plate 20. The first bonding layer 11 may be made of any conventional bonding material known in the art without limitation. The first bonding layer 11 is different from the bonding material used as the second bonding layer 21 for bonding the sputtering target 30 on the assisting plate 20 and the second bonding layer 21 ) Having a melting point higher than that of the metal. The metal usable as the first bonding layer 11 may be tin (Sn).

The assisting plate 20 is bonded to the first surface of the backing plate 10 by the first bonding layer 11 and serves to support the sputtering target 30 like the backing plate 10 . If the auxiliary plate 20 and the backing plate 10 are different from each other, the backing plate 10 or the auxiliary plate 20 may be deformed due to a difference in thermal expansion coefficient during the joining process of the backing plate 10 and the auxiliary plate 20, (20) can be deformed. Therefore, it is preferable that the auxiliary plate 20 is made of the same material as the backing plate 10.

The area of the auxiliary plate 20 is not particularly limited, but is preferably the same as the area of the sputtering target 30 bonded to the auxiliary plate 20, while being smaller than the area of the first surface of the backing plate 10. If the auxiliary plate 20 and the sputtering target 30 are different from each other, cracks may be generated in the auxiliary plate 20 or the sputtering target 30 during bonding or the bonding force may be reduced.

The thickness L2 of the auxiliary plate 20 is not particularly limited but the total thickness L of the auxiliary plate 20 and the sputtering target 30, (L = L1 + L2) is preferably adjusted to be equal to the thickness (L) of the substrate (3). At this time, the thickness of the second coupling layer 21 joining the auxiliary plate 20 and the sputtering target 30 can be neglected. The distance between the sputtering target 30 and the substrate is different when the sum of the thicknesses L1 + L2 of the auxiliary plate 20 and the sputtering target 30 is different from the thickness L of the conventional sputtering target 3, It can affect the efficiency.

The second bonding layer 21 is present on the first surface of the assisting plate 20 and is a layer for bonding the assisting plate 20 and the sputtering target 30. The second bonding layer 21 may be made of any conventional bonding material known in the art without limitation. The second bonding layer 21 is different from the bonding material used as the first bonding layer 11 and is preferably a metal having a melting point lower than the melting point of the first bonding layer 11. The metal usable as the second bonding layer 21 may be indium (In).

The sputtering target 30 is bonded to the first surface of the assisting plate 20 by the second bonding layer 21 and is bonded to the backing plate 10 so as to face the backing plate 10. The sputtering target 30 may be a conventional sputtering target known in the art without limitation, and may be composed of ceramic or metal depending on the purpose of use. The metal may be at least one selected from the group consisting of tantalum, silver, gold, tungsten, ruthenium, nickel, gallium and zinc.

The sputtering target 30 may be a new sputtering target or may be reused in a conventional target used in a sputtering process, in which the consumable part is removed. The area of the stuffering target 30 is not particularly limited, but is preferably the same as the first surface of the assisting plate 20. At this time, if the areas of the sputtering target 30 and the auxiliary plate 20 are different from each other, the bonding force may be decreased or the sputter efficiency may be affected.

The thickness L1 of the sputtering target 30 is not particularly limited but is preferably larger than the maximum depth Dmax of the consumable portion formed in the conventional sputtering target 3 by the sputtering process as shown in Fig. L1 > Dmax). The total thickness L1 + L2 of the sputtering target 30 and the auxiliary plates 20 and L2 bonded to the sputtering target 30 may be equal to the thickness L of the conventional sputtering target 3 (L = L1 + L2). When the total thickness L1 + L2 of the assisting plate 20 and the sputtering target 30 is 100, it is preferable that the ratio of the assistant plate 20: sputtering target 30 is 50: 70 to 30: 50 . Therefore, the sputtering target 30 bonded to the auxiliary plate 20 can be manufactured with a smaller amount of ceramic or metal than the conventional sputtering target 3, thereby reducing the manufacturing cost and time of the target, The use efficiency of the target can be increased as compared with the conventional sputtering target 3. [0064]

As described above, the backing plate-sputtering target assembly 40 of the present invention has the backing plate 10, the assisting plate 20, and the sputtering target 30 formed by the first bonding layer 11 and the second bonding layer 21 Which are sequentially stacked. When the backing plate-sputtering target assembly 40 is used in the sputtering process, the backing plate 10 and the assisting plate 20 are not consumed or deformed, and only the target 30 is consumed to form a thin film on the substrate.

Meanwhile, the backing plate-sputtering target assembly 40 of the present invention replaces the consumed target with a new target 30, or replaces the auxiliary plate 20 and the consumed target with a new auxiliary plate 20 and a target (30), it can be reused in the sputtering process. At this time, in order to remove the consumed sputtering target from the backing plate 10, the second bonding layer 21 joining the auxiliary plate 20 and the target 30 is heated to a temperature at which the auxiliary bonding layer 21 is melted, can do. Since the melting point of the second bonding layer 21 is lower than the melting point of the first bonding layer 11 when the second bonding layer 21 is heated to a melting temperature, The consumed target can be separated from the auxiliary plate 20 without affecting the joining of the auxiliary plate 20. [

In order to remove the auxiliary plate 20 and the consumed sputtering target from the backing plate 10, it is necessary to (i) melt the second binding layer 21 for bonding the auxiliary plate 20 and the target 30 (Ii) the first bonding layer 11 joining the backing plate 10 and the assisting plate 20 is heated to a temperature at which the assisting plate 20 can be melted, Can be separated. When the second bonding layer 21 and the first bonding layer 11 are sequentially heated to a temperature at which they are melted, the consumed target and the auxiliary plate 20 can be separated from the backing plate 10.

Thereafter, the backing plate 10 from which the consumed target has been separated may join the new assisting plate 20 or the sputtering target 30 to form a new backing plate-sputtering target assembly 40.

Although the present invention is directed to the embodiments as described above, additional embodiments may be devised without departing from the basic scope of the present invention, the scope of which is determined by the following claims.

1: Backing plate
2: bonding layer
3: Sputtering target
4: Backing plate - sputtering target assembly
10: Backing plate
11: first bonding layer
20: Auxiliary plate
21: second bonding layer
30: sputtering target
40: Backing plate - sputtering target assembly

Claims (9)

A backing plate having a first surface facing the sputtering target;
A first bonding layer present on a first side of the backing plate;
An auxiliary plate joined to the first surface of the backing plate by the first coupling layer;
A second bonding layer present on a first side of the assisting plate; And
And a sputtering target, which is joined to the first surface of the assisting plate by the second bonding layer,
The sputtering target assembly comprising: The method according to claim 1,
Wherein the backing plate and the assisting plate are made of the same metal. The method according to claim 1,
Wherein the first bonding layer and the second bonding layer are made of different metals. The method according to claim 1,
Wherein the first bonding layer is higher than the melting point of the second bonding layer. The method according to claim 1,
Wherein the assisting plate is smaller than the area of the backing plate and is equal to the area of the sputtering target. The method according to claim 1,
Wherein a thickness ratio of the assisting plate: sputtering target = 50 to 70: 30 to 50 is adjusted when the sum of the thickness of the assisting plate and the sputtering target is 100. The backing plate- The method according to claim 1,
Wherein the sputtering target is made of ceramic or metal. 8. The method of claim 7,
Wherein the metal is at least one selected from the group consisting of tantalum, silver, gold, tungsten, ruthenium, nickel, gallium, and zinc. The method according to claim 1,
Wherein the assisting plate and the sputtering target are replaceable with different aiding plates and sputtering targets, respectively.
KR2020150007187U 2015-11-05 2015-11-05 Backing plate-sputtering target assembly KR20170001682U (en)

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KR2020150007187U KR20170001682U (en) 2015-11-05 2015-11-05 Backing plate-sputtering target assembly

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180049874A (en) * 2016-11-04 2018-05-14 희성금속 주식회사 Preparation method of igzo sputtering target and igzo sputtering target prepared thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180049874A (en) * 2016-11-04 2018-05-14 희성금속 주식회사 Preparation method of igzo sputtering target and igzo sputtering target prepared thereby

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