KR20090085450A - Plasma display panel dielectric substance composition, plasma display panel comprising the same - Google Patents

Abstract

A plasma display panel dielectric composition and a plasma display panel comprising the same are provided to improve intensity, a manufacturing yield and reliability. A plasma display panel dielectric composition comprises glass frit, a binder, a dispersing agent, a plasticizer and a solvent. The glass frit is composed of 45-60 parts of lead oxide(PbO), 15-35 parts of boron oxide(B2O3), 0.1-10 parts of silicon oxide(SiO2), 0.1-12 parts of aluminium oxide(Al2O3) and 0.1-12 parts of barium oxide(BaO). The content of the glass frit is 60-80 parts on a total weight basis of the plasma display panel dielectric composition.

Description

Plasma Display Panel Dielectric Substance Composition, Plasma Display Panel Comprising The Same}

The present invention relates to a plasma display panel dielectric composition and a plasma display panel comprising the same.

The present invention relates to a plasma display panel dielectric composition and a plasma display panel comprising the same.

In general, a plasma display panel (Plasma Display Panel) is a unit cell is formed by each of the upper and lower dielectric formed on the front substrate and the rear substrate and a barrier rip formed between the front substrate and the rear substrate, each cell The inside is filled with a gas such as neon (Ne), helium (He) or a mixture of neon and helium (Ne + He), and an inert gas containing a small amount of xenon (Xe). Therefore, when discharged by a high frequency voltage, the inert gas generates vacuum ultraviolet rays and emits phosphors formed between the partition walls to realize an image. Such plasma display panels are not only easy to thin and large in size, but are also being spotlighted as next generation display devices by providing greatly improved image quality thanks to recent technology development.

Accordingly, the present invention provides a composition for a plasma display panel dielectric and a plasma display panel including the same, which can improve manufacturing yield and improve reliability of the plasma display panel.

In order to achieve the above object, the composition for a plasma display panel dielectric according to an embodiment of the present invention, the glass frit, 45 to 60 parts by weight of lead oxide (PbO), 15 to 35 parts by weight based on 100 parts by weight of the glass frit, respectively Parts boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), 0.1 to 12 parts by weight of aluminum oxide (Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO).

In addition, the plasma display panel according to an embodiment of the present invention includes a front substrate, a rear substrate facing the front substrate, and a dielectric layer formed on the front substrate, the dielectric layer includes a glass frit, and the glass frit is a glass frit 100 45 to 60 parts by weight of lead oxide (PbO), 15 to 35 parts by weight of boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), and 0.1 to 12 parts by weight of aluminum oxide ( Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO).

Plasma display panel according to an embodiment of the present invention has the effect of improving the strength by the dielectric properties, manufacturing yield and reliability.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 illustrates a structure of a plasma display panel according to an exemplary embodiment of the present invention.

Referring to FIG. 1, a plasma display panel according to an embodiment of the present invention includes a front panel 110 including a front substrate 111 on which a scan electrode 112 and a sustain electrode 113 are formed, and the aforementioned scan electrode ( The rear panel 120 including the rear substrate 121 on which the address electrode 123 intersects the 112 and the sustain electrode 113 is formed is bonded to each other at a predetermined interval.

Here, the scan electrode 112 and the sustain electrode 113 formed on the front substrate 111 are formed in parallel with each other to generate a discharge in the discharge cell and maintain the discharge of the discharge cell.

The scan electrode 112 and the sustain electrode 113 formed on the front substrate 111 need to consider light transmittance and electrical conductivity in order to emit light generated in the discharge cell to the outside and to secure driving efficiency. Accordingly, each of the scan electrode 112 and the sustain electrode 113 may include bus electrodes 112b and 113b made of metal such as silver and transparent electrodes 112a and indium tin oxide (ITO). 113a).

An upper dielectric layer 114 may be formed on the front substrate 111 on which the scan electrode 112 and the sustain electrode 113 are formed to cover the scan electrode 112 and the sustain electrode 113.

The upper dielectric layer 114 limits the discharge current of the scan electrode 112 and the sustain electrode 113 and insulates the scan electrode 112 and the sustain electrode 113.

A protective layer 115 may be formed on the upper dielectric layer 114 to facilitate discharge conditions. The protective layer 115 may be made of a material having a high secondary electron emission coefficient, for example, magnesium oxide (MgO).

Meanwhile, the address electrode 123 formed on the rear substrate 121 is an electrode for supplying a data signal to the discharge cells.

The lower dielectric layer 125 may be formed on the rear substrate 121 on which the address electrode 123 is formed to cover the address electrode 123.

In the upper portion of the lower dielectric layer 125, a discharge space, that is, a partition wall 122 for partitioning the discharge cells is formed. In the discharge cells partitioned by the partition wall 122, a phosphor layer 124 is formed that emits visible light for image display during address discharge. For example, red (R), green (G), and blue (B) phosphor layers may be formed.

In the plasma display panel according to the exemplary embodiment described above, when a driving signal is supplied to the scan electrode 112, the sustain electrode 113, and the address electrode 123, the plasma display panel may be disposed in the discharge cell partitioned by the partition wall 122. Discharge occurs in the image to realize the image.

In the plasma display panel according to an embodiment of the present invention, an upper dielectric layer 114 and a lower dielectric layer 125 are formed on the front substrate 111 and the rear substrate 121, respectively, and the upper and lower dielectric layers 114, 125) is a composition for a plasma display panel dielectric comprising a glass frit, a binder, a dispersant, a plasticizer and a solvent, wherein the glass frit is 45 to 60 parts by weight of lead oxide (PbO), 15 to 60 parts by weight of 100 parts by weight of the glass frit, respectively. 35 parts by weight of boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), 0.1 to 12 parts by weight of aluminum oxide (Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO) Other matters are changeable by doing.

Hereinafter, a composition for a plasma display panel dielectric according to an embodiment of the present invention will be described in detail.

The dielectric composition of the plasma display panel is for manufacturing a dielectric for maintaining glow discharge and accumulating wall charge, and may include a glass frit, a binder, a dispersant, a plasticizer, and a solvent.

The composition for a plasma display panel dielectric according to an embodiment of the present invention includes a glass frit, and the glass frit may be included in an amount of 60 to 80 parts by weight based on the total composition for the plasma display panel dielectric.

The glass frit is 45 to 60 parts by weight of lead oxide (PbO), 15 to 35 parts by weight of boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), 0.1 to 100 parts by weight of glass frit, respectively. To 12 parts by weight of aluminum oxide (Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO).

The composition for a plasma display panel dielectric according to an embodiment of the present invention may include 45 to 60 parts by weight of lead oxide (PbO) based on 100 parts by weight of glass frit.

Lead oxide (PbO) improves the bubble characteristics of the dielectric and lowers the firing temperature.

Therefore, when the content of lead oxide (PbO) is 45 parts by weight or more relative to the weight of the entire glass frit, it is possible to obtain a sufficient effect to increase the bubble characteristics and lower the firing temperature, and when the content of lead oxide (PbO) is 60 parts by weight or less, Since it is possible to prevent the lowering and the firing temperature is too low, lead oxide (PbO) may be included in 45 to 60 parts by weight.

In addition, the composition for the dielectric may include 15 to 35 parts by weight of boron oxide (B ₂ O ₃ ) based on 100 parts by weight of the glass frit. Boron oxide (B ₂ O ₃ ) improves the thermal stability of the dielectric and serves as an insulation resistance.

Therefore, when the content of boron oxide (B ₂ O ₃ ) is 15 parts by weight or more based on the total weight of the glass frit, it is possible to improve the thermal stability and form a sufficient role of insulation resistance, and in the case of 35 parts by weight or less Since the role or thermal stability may be prevented from being lowered, boron oxide (B ₂ O ₃ ) may be included in an amount of 15 to 35 parts by weight.

In addition, the composition for the dielectric may include 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ) based on 100 parts by weight of the glass frit. Silicon oxide (SiO ₂ ) serves as a glass forming component to stabilize the glass chemically and optically, and to greatly increase the glass transition temperature (Tg) and glass softening temperature (Ts).

Therefore, when the content of silicon oxide (SiO ₂ ) is 0.1 parts by weight or more relative to the total weight of the glass frit, the dielectric can be chemically and optically stabilized, and when the content is less than 10 parts by weight, the glass transition temperature (Tg) is excessive. Since it can be prevented from being raised, silicon oxide (SiO ₂ ) may be included in an amount of 0.1 to 10 parts by weight.

In addition, the composition for the dielectric may include 0.1 to 12 parts by weight of aluminum oxide (Al ₂ O ₃ ) based on 100 parts by weight of the glass frit. Aluminum oxide (Al ₂ O ₃ ) serves to reduce the coefficient of thermal expansion (CTE), increase the high temperature viscosity to improve the mechanical chemical and stability of the composition.

Therefore, when the content of aluminum oxide (Al ₂ O ₃ ) is 0.1 parts by weight or more relative to the total weight of the glass frit, the coefficient of thermal expansion (CTE) can be reduced and the mechanical and chemical stability of the composition can be improved. In this case, since the viscosity behavior is suitable in the coefficient of thermal expansion (CTE) and the firing region, the aluminum oxide (Al ₂ O ₃ ) may be included in an amount of 1 to 10 parts by weight.

In addition, the composition for the dielectric may include 0.1 to 12 parts by weight or less of barium oxide (BaO) based on 100 parts by weight of glass frit. Barium oxide (BaO) serves to control the dielectric constant and coefficient of thermal expansion (CTE) of the dielectric composition.

Therefore, when the content of barium oxide (BaO) is 0.1 parts by weight or more based on 100 parts by weight of the total glass frit, a stable dielectric constant and coefficient of thermal expansion can be obtained, and when 12 parts by weight or less, the coefficient of thermal expansion (CTE) decreases. Since it is possible to prevent the shape stability of the dielectric from being lowered, the barium oxide (BaO) may be included in an amount of 0.1 parts by weight or more and 12 parts by weight or less.

In addition, the composition for the dielectric may include 1 to 10 parts by weight or less of titanium oxide (TiO ₂ ) based on 100 parts by weight of glass frit. Titanium oxide (TiO ₂ ) improves the chemical durability of the dielectric composition, and serves to increase the glass transition temperature.

Therefore, when the content of titanium oxide (TiO ₂ ) is 1 part by weight or more based on 100 parts by weight of the total glass frit, the chemical durability of the dielectric formed by the composition for dielectrics can be improved. It is possible to prevent the glass transition temperature from being too high.

In addition, the composition for the dielectric may further include more than 0 to 5 parts by weight of lithium oxide (Li ₂ O) based on 100 parts by weight of the glass frit. Lithium oxide (Li ₂ O) can control the firing temperature by lowering the glass transition temperature (Tg) of the composition, increases the dielectric constant, and functions to slightly increase the coefficient of thermal expansion (CTE).

Therefore, when the content of lithium oxide (LiO ₂ ) is greater than zero relative to the weight of the entire glass frit, the dielectric constant can be prevented from being lowered, and when the content of lithium oxide (LiO ₂ ) is 5 parts by weight or less, the plastic glass has an appropriate glass transition temperature (Tg). Since it may be easy, lithium oxide (LiO ₂ ) may be included in more than 0 to 5 parts by weight or less.

As described above, the plasma display panel dielectric composition according to the embodiment of the present invention includes a glass frit, and the glass frit includes lead oxide (PbO), boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ), It may include aluminum oxide (Al ₂ O ₃ ) and barium oxide (BaO), and may further include titanium oxide (TiO ₂ ) or lithium oxide (Li ₂ O).

The composition for a plasma display panel dielectric according to an embodiment of the present invention includes a binder, and the binder may be included in an amount of 1 to 20 parts by weight based on the total composition for the plasma display panel dielectric.

The binder may comprise a first monomer, a second monomer and a third monomer.

The first monomer may use a hexa acrylate monomer, for example hexa methacrylate or 2-ethyl hexa methacrylate.

As the second monomer, an acrylate monomer having an alkyl group having 1 to 5 carbon atoms may be used, for example, methacrylate, iso-butyl methacrylate, normal-butyl methacrylate, methyl methacrylate and ethyl methacrylate. At least one selected from the group consisting of a rate.

The third monomer may be a polar group-containing monomer, for example, may be any one or more selected from the group consisting of methacrylate, acrylate, 2-hydroxy ethyl methacrylate and methacrylic acid.

Here, the binder of the composition for a plasma display panel dielectric according to an embodiment of the present invention may include a first monomer, a second monomer and a third monomer, the content of each of the first monomer with respect to 100 parts by weight of the binder 50 to 85 parts by weight, the second monomer may be included in 10 to 30 parts by weight, the third monomer may be included in 1 to 20 parts by weight.

The composition for a plasma display panel dielectric according to an embodiment of the present invention may include a dispersant. The dispersant is to prevent the glass frit from being deposited on the dielectric layer by increasing the dispersing force of the glass frit, and may be included in an amount of 0.1 to 5 parts by weight based on the total composition of the plasma display panel dielectric.

The dispersant may be a polyamineamide compound.

Plasma display panel dielectric composition according to an embodiment of the present invention may include a plasticizer. The plasticizer controls the drying rate of the dielectric layer and at the same time provides flexibility to the dry film, and may be included in an amount of 0.1 to 7 parts by weight based on the total composition of the plasma display panel dielectric.

The plasticizer may include any one or more selected from the group consisting of phthalate-based, dioctyl amipate (DOA), dioctyl azolate (DOZ) and ester (Esther), and for example, butylbenzylphthalate and dioctyl. Phthalate, diisooctyl phthalate, dicapryl phthalate, dibutyl phthalate, etc. can be used.

The composition for plasma display panel dielectric according to the embodiment of the present invention may further include a solvent. The solvent may dissolve the binder, may be mixed with other additives, and may have a boiling point of 150 ° or more, and may be included in an amount of 5 to 30 parts by weight based on the total composition of the plasma display panel dielectric.

The solvent may include any one or more selected from the group consisting of toluene, propylene glycol monomethyl ether (PGME), butyl acetate (BA), methyl ethyl ketone (MEK), and cyclohexanone (CYC), Other ethyl carbitol, butyl carbitol, ethyl carbitol acetate, butyl carbitol acetate, texanol, terpin oil, dipropylene glycol methyl ether, dipropylene glycol ethyl ether, dipropylene glycol monomethyl ether acetate, cellosolve acetate, Butyl cellosolve acetate, tripropylene glycol, etc. can be used.

The composition for a plasma display panel dielectric according to an embodiment of the present invention may further include an additive.

The additives may include antioxidants, ultraviolet light absorbers to improve resolution, sensitizers to improve sensitivity, and the like. In addition, polymerization inhibitors and polyester-modified dimethylpolysiloxanes, polyhydroxycarboxylic acid amides, silicone-based polyacrylate copolymers or fluorine-based paraffin compounds which improve the storage properties of coating compositions such as phosphoric acid, phosphate esters and carboxylic acid-containing compounds It may further include a leveling agent for improving the flatness of the film during printing, such as.

Hereinafter, a composition for a plasma display panel dielectric including the composition according to an embodiment of the present invention and a manufacturing method thereof will be described.

Plasma display panel dielectric composition according to an embodiment of the present invention can be prepared by the following manufacturing method. First, the glass frit powder is uniformly mixed to a predetermined content and then melted into a platinum crucible. At this time, the melting temperature is preferably 1000 to 1500 ℃, the melting time is 10 to 60 minutes to maintain the components can be mixed evenly in the molten state.

The molten mixed raw material is quenched and then pulverized. At this time, the quenching process may be carried out dry or wet, water may be used in the wet process. The pulverization process after the quenching process may also be performed dry or wet, and water or an organic solvent may be used in the wet grinding process.

The pulverized glass frit powder is filtered, dried, and pulverized to prepare a powder having a small particle size, for example, 0.1 to 10 μm in powder form. Next, glass frit powder, a binder, a dispersant, a plasticizer, and a solvent are mixed and kneaded at a predetermined ratio to form a dielectric paste.

The dielectric according to an embodiment of the present invention may be formed by a table coating method of directly applying the prepared dielectric paste on a substrate using a coater nozzle.

2 is a view for explaining an embodiment of a method of manufacturing a plasma display panel dielectric according to an embodiment of the present invention.

2, embodiments of a method of manufacturing a plasma display panel dielectric according to an embodiment of the present invention are disclosed. However, the following embodiments are only preferred embodiments of the present invention, and the present invention is not limited to the following embodiments.

<Example 1>

32.9 g of lead oxide (PbO), 7.7 g of silicon oxide (SiO ₂ ), 15.4 g of boron oxide (B ₂ O ₃ ), 4.2 g of aluminum oxide (Al ₂ O ₃ ), 7 g of barium oxide (BaO), titanium oxide (TiO) ₂ ) 1.4 g and 1.4 g of lithium oxide (Li ₂ O) were mixed and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 70 g of glass frit powder.

70 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

<Example 2>

Under the same process as in Example 1, 28.5 g of lead oxide (PbO), 7.2 g of silicon oxide (SiO ₂ ), 13.2 g of boron oxide (B ₂ O ₃ ), 3.9 g of aluminum oxide (Al ₂ O ₃ ), and barium oxide ( 4.8 g of BaO), 1.2 g of titanium oxide (TiO ₂ ) and 1.2 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 60 g of glass frit powder.

60 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

<Example 3>

Under the same process as in Example 1, 38 g of lead oxide (PbO), 10.4 g of silicon oxide (SiO ₂ ), 18.4 g of boron oxide (B ₂ O ₃ ), 5.2 g of aluminum oxide (Al ₂ O ₃ ), barium oxide (BaO) 4.8 g), 1.6 g of titanium oxide (TiO ₂ ) and 1.6 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 80 g of glass frit powder.

80 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

<Example 4>

Under the same process as in Example 1, 36 g of lead oxide (PbO), 9.75 g of silicon oxide (SiO ₂ ), 17.25 g of boron oxide (B ₂ O ₃ ), 5.25 g of aluminum oxide (Al ₂ O ₃ ), barium oxide (BaO) 3.75 g), 1.5 g of titanium oxide (TiO ₂ ) and 1.5 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 75 g of glass frit powder.

75 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

Comparative Example 1

Under the same process as in Example 1, 30.8 g of lead oxide (PbO), 6.3 g of silicon oxide (SiO ₂ ), 13.3 g of boron oxide (B ₂ O ₃ ), 4.2 g of aluminum oxide (Al ₂ O ₃ ), barium oxide ( 12.6 g of BaO), 1.4 g of titanium oxide (TiO ₂ ), and 1.4 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 70 g of glass frit powder.

70 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

Comparative Example 2

Under the same process as in Example 1, 31.5 g of lead oxide (PbO), 7 g of silicon oxide (SiO ₂ ), 14 g of boron oxide (B ₂ O ₃ ), 4.2 g of aluminum oxide (Al ₂ O ₃ ), barium oxide (BaO) 10.5 g, 1.4 g of titanium oxide (TiO ₂ ) and 1.4 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 70 g of glass frit powder.

70 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

Comparative Example 3

Under the same process as in Example 1, 27.6 g of lead oxide (PbO), 6 g of silicon oxide (SiO ₂ ), 12.6 g of boron oxide (B ₂ O ₃ ), 3.6 g of aluminum oxide (Al ₂ O ₃ ), and barium oxide (BaO) 7.8 g), 1.2 g of titanium oxide (TiO ₂ ) and 1.2 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 60 g of glass frit powder.

60 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

<Comparative Example 4>

Under the same process as in Example 1, 36.8 g of lead oxide (PbO), 8.8 g of silicon oxide (SiO ₂ ), 16.8 g of boron oxide (B ₂ O ₃ ), 4.8 g of aluminum oxide (Al ₂ O ₃ ), barium oxide ( 9.6 g of BaO), 1.6 g of titanium oxide (TiO ₂ ) and 1.6 g of lithium oxide (Li ₂ O) were mixed, and the mixture was melted at a temperature of 1200 ° C. in a furnace. The molten mixture was dry quenched and then ground to form 80 g of glass frit powder.

80 g of the prepared glass frit powder and a binder were mixed to prepare a dielectric paste.

The prepared dielectric paste was applied directly onto a substrate using a coater nozzle and fired to form a dielectric layer.

So far, the transmittance, Tg temperature, coefficient of thermal expansion, and panel strength of the dielectric of the plasma display panels manufactured according to Examples 1 to 4 and Comparative Examples 1 to 4 were measured based on Example 1.

As shown in FIG. 2, the plasma display panel according to the exemplary embodiments of the present invention will be described with reference to the Tg temperature, the coefficient of thermal expansion, and the panel strength after the dielectric formation and the firing process of the dielectric.

In Examples 1 to 4, 60 to 80 parts by weight of the glass frit in the composition for the plasma display panel dielectric may be formed in the following composition.

In Examples 1 to 4, 60 to 80 parts by weight of the glass frit in the composition for the plasma display panel dielectric may be formed in the following composition.

The glass frit is 45 to 60 parts by weight of lead oxide (PbO), 15 to 35 parts by weight of boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), 0.1 to 100 parts by weight of the total glass frit, respectively. To 12 parts by weight of aluminum oxide (Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO), 1 to 10 parts by weight of titanium oxide (TiO ₂ ) and greater than 0 to 5 parts by weight of lithium oxide ( Li ₂ O) may be formed to be further included.

In addition, the binder of the composition for a plasma display panel dielectric may include a first monomer, a second monomer, and a third monomer, each of which may be included in an amount of 50 to 85 parts by weight based on 100 parts by weight of the binder. , The second monomer may be included in 10 to 30 parts by weight, the third monomer may be included in 1 to 20 parts by weight.

Therefore, by lowering the barium oxide (BaO) in the dielectrics according to Examples 1 to 4, the thermal expansion coefficient can be controlled to 70 or less. Thereby, panel strength can be improved than Comparative Examples 1-4.

At this time, when the barium oxide (BaO) is lowered, the glass transition temperature (Tg) may increase, but as can be seen through Examples 1 to 4, the glass transition is increased by increasing lead oxide (PbO) or boron oxide (B ₂ O ₃ ). The panel strength can be improved while preventing the temperature Tg from increasing.

In addition, it can be seen that the dielectric layer prepared from the composition for the plasma display panel dielectric according to the embodiment of the present invention exhibits transmittance characteristics of 50 to 80% due to improved transmittance.

As described above, the composition for the plasma display panel dielectric and the dielectric layer prepared according to the embodiment of the present invention have an advantage of providing a plasma display panel having excellent reliability as the panel strength is improved after dielectric firing.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the above-described technical configuration of the present invention may be embodied in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced.

1 is for explaining a plasma display panel according to an embodiment of the present invention.

2 is a view for explaining an embodiment of a method of manufacturing a plasma display panel dielectric according to an embodiment of the present invention.

Claims (9)

In the composition for a plasma display panel dielectric comprising a glass frit, a binder, a dispersant, a plasticizer and a solvent, The glass frit, 45 to 60 parts by weight of lead oxide (PbO), 15 to 35 parts by weight of boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), 0.1 to 12 parts by weight, respectively, based on 100 parts by weight of the glass frit A composition for a plasma display panel dielectric comprising negative aluminum oxide (Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO). According to claim 1, The glass frit is 60 to 80 parts by weight based on the total composition for the plasma display panel dielectric composition. According to claim 1, The binder is 1 to 20 parts by weight based on the composition for the plasma display panel dielectric composition. According to claim 1, The dispersant is a composition for a plasma display panel dielectric comprising a polyamineamide-based compound. According to claim 1, The dispersant is 0.1 to 5 parts by weight of the total composition for the plasma display panel dielectric composition. According to claim 1, The plasticizer composition for plasma display panel dielectric comprising any one or more selected from the group consisting of phthalate-based, dioctyl amipate (DOA), dioctyl azolate (DOZ) and ester (Esther). According to claim 1, Wherein the plasticizer is 0.1 to 7 parts by weight relative to the composition for the plasma display panel dielectric composition. Front substrate; A rear substrate facing the front substrate; And A dielectric layer formed on the front substrate, The dielectric layer comprises a glass frit, The glass frit, 45 to 60 parts by weight of lead oxide (PbO), 15 to 35 parts by weight of boron oxide (B ₂ O ₃ ), 0.1 to 10 parts by weight of silicon oxide (SiO ₂ ), 0.1 to 12 parts by weight, respectively, based on 100 parts by weight of the glass frit A plasma display panel comprising negative aluminum oxide (Al ₂ O ₃ ) and 0.1 to 12 parts by weight of barium oxide (BaO). The method of claim 8, The dielectric layer has a transmittance of 50 to 80%.

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