KR20090076129A - The method for manufacturing semiconductor device - Google Patents

Abstract

A formation method of the semiconductor device is provided, which improve the treatment quantity of the scanner equipment by forming the cylinder capacitor. The insulating layer(310), the first hard mask layer(320), and the second hard mask layer(330) and the third hard mask layer are formed on the semiconductor substrate(300). The first photoresist pattern is formed on the whole surface by exposing and developing the full die of the wafer. The third hard mask layer pattern(370) is formed by etching the third hard mask layer. The first photoresist pattern is removed after the third hard mask layer pattern formation. The second photosensitive pattern exposing the second hard mask layer is formed by exposing and developing the inner die domain on the semiconductor board. The bottom electrode area is opened by etching the second hard mask layer, the first hard mask layer, and insulating layer.

Description

The method for manufacturing a semiconductor device

1 is a photograph showing a problem of a method of forming a semiconductor device according to the prior art.

2 is a plan view showing a method of forming a semiconductor device according to the prior art.

3A to 3E are cross-sectional views illustrating a method of forming a semiconductor device in accordance with the present invention.

4 is a plan view showing a method of forming a semiconductor device according to the present invention.

<Description of the symbols for the main parts of the drawings>

300: semiconductor substrate 310: insulating film

320: first hard mask layer 330: second hard mask layer

340: third hard mask layer 350: antireflection film BARC

360: photoresist pattern 370: third hard mask layer pattern

380: photoresist pattern 390: lower electrode region

1000a, 2000a, 3000a: Edge Die Area

2000b, 3000b: Inner Die Area

1000b, 2000c, 4000c: wafer

4000d: Full Die Area

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a semiconductor device, and exposes an entire die region using a lower electrode mask during a lower electrode mask process, and then exposes an inner die region using an I-line scanner. It is possible to improve the throughput of scanner equipment without using expensive scanner equipment by forming cylinder capacitors by opening them, and to increase the exposure time when an emulsion scanner is applied to the lower electrode mask process. The present invention relates to an invention that can solve the problem of overlay failure.

Conventional cylinder capacitors are formed through a dip out process using wet chemicals.

In the dip-out process of such a cylinder capacitor, the capacitor falls and pulls out.

The pattern of the edge die region on the semiconductor substrate has a problem in that a collapse and pulling phenomenon occurs mainly during the wet dip out process, resulting in a defect that contaminates the wafer equipment.

In particular, since an emulsion scanner uses water between the wafer and the lens, when the exposure time is long, a cooling effect caused by the wafer is generated, resulting in poor overlay.

Here, the Immersion exposure method fills an arbitrary liquid between the final lens of the projection lens unit and the wafer stage, thereby increasing the numerical aperture (NA) of the optical system by the refractive index of the liquid divided by the resolution refractive index. Corresponds to

When using a 193nm light source (ArF laser beam), when the water is selected as the medium, the refractive index of the water is 1.44, so the wavelength of the ArF laser beam passing through the water decreases from 193nm to 134nm.

This can be expected to have the same effect as using a short wavelength light source such as an F2 laser (157 nm) to increase the resolution.

Immersion exposure apparatus includes the following main apparatuses along the direction in which debt is irradiated from the top.

First, the source unit for irradiating an exposure source made in an illumination system, a reticle stage for fixing a reticle provided with a mask pattern, and the irradiated light source are connected, and the wafer is adjusted again to adjust the magnification. The projection lens part irradiated to and the wafer stage which fixes a wafer are provided.

In this case, an emulsion part including a liquid is included between the projection lens part and the wafer stage.

1 is a photograph showing a problem of a method of forming a semiconductor device according to the prior art,

Referring to FIG. 1, the 'A' region in which an unknown pattern is formed in the edge die region 1000a on the wafer 1000b may collapse the capacitor during the wet dip out process for forming the capacitor. And an area where a pulling phenomenon may occur.

2 is a plan view illustrating a method of forming a semiconductor device according to the prior art;

Two exposure processes are performed on the wafer 2000c using an inner die region 2000b mask and an edge die region 2000a mask, thereby inhibiting throughput of scanner equipment. Phenomenon occurs.

As described above, the method of forming a semiconductor device according to the related art has a problem of inhibiting throughput of scanner equipment by exposing using two masks during a lower electrode mask process using an emulsion scanner. As the exposure time increases, a wafer overlay failure due to a cooling effect occurs on the wafer.

 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a semiconductor device. In the lower electrode mask process, an entire die region is exposed using a lower electrode mask, and an inner die region is then formed using an I-line scanner. By exposing and opening to form a cylinder capacitor, the throughput of the scanner equipment can be improved without using expensive scanner equipment, and the exposure time when the emulsion scanner is applied to the lower electrode mask process. An object of the present invention is to provide a method of forming a semiconductor device that can solve the problem of the overlay failure due to the increase.

The method for forming a semiconductor device according to the present invention,

Forming an insulating film, a first hard mask layer, a second hard mask layer, and a third hard mask layer on the semiconductor substrate;

Exposing and developing the entire wafer die region on the entire surface to form a first photoresist pattern for defining a lower electrode;

Etching the third hard mask layer using the first photoresist pattern as a mask to form a third hard mask layer pattern;

Removing the first photoresist pattern after forming the third hard mask layer pattern;

Exposing and developing an inner die region on the semiconductor substrate to form a second photoresist pattern exposing the second hard mask layer;

And etching the second hard mask layer, the first hard mask layer, and the insulating layer using the second photoresist pattern as a mask to open the lower electrode region.

The first, second and third hard mask layers may be formed of any one of three different materials selected from an amorphous carbon layer, a silicon nitride film, a polysilicon and a PE-TEOS film, and a group thereof, respectively.

The exposure process is formed by using an Arf emulsion (Immersion) and Arf process,

The inner die region is formed by an exposure process using an I-line process,

The photoresist pattern is formed to a thickness of 1000 ~ 10000Å,

The method may further include planarizing etching of an edge die region outside the inner die.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention.

In addition, in the drawings, the thicknesses of layers and regions are exaggerated for clarity, and if it is mentioned that the layer is on another layer or substrate it may be formed directly on another layer or substrate, Alternatively, a third layer may be interposed therebetween.

Also, the same reference numerals throughout the specification represent the same components.

3A to 3E are cross-sectional views illustrating a method of forming a semiconductor device in accordance with the present invention.

Referring to FIGS. 3A and 3B, an insulating layer 310 is formed on a semiconductor substrate 300 including an edge die 3000a and an inner die 3000b.

Next, the first hard mask layer 320 is formed on the insulating film 310.

A second hard mask layer 330, a third hard mask layer 340, and an anti-reflection film 350 are formed on the first hard mask layer 320.

In this case, the first, second and third hard mask layers 320, 330, and 340 are each made of any one of three different materials selected from an amorphous carbon layer, a silicon nitride film, a polysilicon and PE-TEOS film, and a group thereof. It is preferable to form.

Next, a photosensitive film is formed on the antireflection film 350.

The photosensitive film is exposed and developed to the entire die area of the wafer using the lower electrode mask to form the photosensitive film pattern 360.

In this case, the exposure process using the lower electrode mask is preferably formed using an Arf emulsion and an Arf process.

Referring to FIG. 3C, the anti-reflection film 350 and the third hard mask layer 340 are etched using the photoresist pattern 360 as a mask to form a third hard mask layer pattern 370 for forming the lower electrode region. .

Referring to FIG. 3D, a photosensitive film is formed on the third hard mask layer pattern 370.

The inner die region 3000b using the photoresist film as a mask is exposed and developed to expose the second hard mask layer 330, and the photoresist pattern 380 is formed in the edge die region 3000a.

In this case, it is preferable to form the photoresist pattern 380 using an I-line process during exposure of the inner die region 3000b.

In addition, the photosensitive film pattern 380 is preferably formed to a thickness of 1000 ~ 10000Å.

Referring to FIG. 3E, the second hard mask layer 330, the first hard mask layer 320, and the insulating layer 310 of the inner die region 3000b are etched using the photoresist pattern 380 as a mask to form the lower electrode region ( 390) Open.

Thereafter, the photoresist pattern 380 and the hard mask layer pattern 370 are removed, and the second hard mask layer 330 and the first hard mask layer 320 remaining until the insulating layer 310 is exposed by the planarization etching process are removed. Remove it.

4 is a plan view showing a method of forming a semiconductor device according to the present invention;

The entire die area is exposed by applying a mask to the full die area 4000d on the wafer 4000c during the lower electrode mask process.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a semiconductor device. In the lower electrode mask process, an entire die region is exposed using a lower electrode mask, and an inner die region is then formed using an I-line scanner. By exposing and opening and forming cylinder capacitors, the throughput of scanner equipment can be improved without using expensive scanner equipment, and the exposure time when an emulsion scanner is applied to the lower electrode mask process. It relates to an invention that can solve the problem of the overlay (overlay) due to the increase.

In addition, the preferred embodiment of the present invention for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as belonging to a range.

Claims (6)

Forming an insulating film, a first hard mask layer, a second hard mask layer, and a third hard mask layer on the semiconductor substrate; Exposing and developing the entire wafer die region on the entire surface to form a first photoresist pattern for defining a lower electrode; Etching the third hard mask layer using the first photoresist pattern as a mask to form a third hard mask layer pattern; Removing the first photoresist pattern after forming the third hard mask layer pattern; Exposing and developing an inner die region on the semiconductor substrate to form a second photoresist pattern exposing the second hard mask layer; And And etching the second hard mask layer, the first hard mask layer, and the insulating layer by using the second photoresist pattern as a mask to open a lower electrode region. The method of claim 1, The first, second and third hard mask layers are each formed of any one of three different materials selected from an amorphous carbon layer, a silicon nitride film, a polysilicon and PE-TEOS film, and a group thereof. Method of formation. The method of claim 1, The exposure process is a method of forming a semiconductor device, characterized in that formed using the Arf emulsion (Immersion) and Arf process. The method of claim 1, The inner die region is formed by an exposure process using an I-line process. The method of claim 1, The photosensitive film pattern is a method of forming a semiconductor device, characterized in that formed to a thickness of 1000 ~ 10000Å. The method of claim 1, And flattening etching an edge die region outside the inner die.

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