KR20100042468A - Method for forming semiconductor device - Google Patents

Method for forming semiconductor device Download PDF

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Publication number
KR20100042468A
KR20100042468A KR1020080101624A KR20080101624A KR20100042468A KR 20100042468 A KR20100042468 A KR 20100042468A KR 1020080101624 A KR1020080101624 A KR 1020080101624A KR 20080101624 A KR20080101624 A KR 20080101624A KR 20100042468 A KR20100042468 A KR 20100042468A
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KR
South Korea
Prior art keywords
pattern
exposure
mask
forming
photosensitive film
Prior art date
Application number
KR1020080101624A
Other languages
Korean (ko)
Inventor
반근도
이성구
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020080101624A priority Critical patent/KR20100042468A/en
Publication of KR20100042468A publication Critical patent/KR20100042468A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Abstract

In the method of forming a semiconductor device of the present invention, a photosensitive film is coated on an upper surface of a semiconductor substrate on which an etched layer is formed, and the first photosensitive film is first exposed using a first exposure mask in the form of a line-and-space pattern having a first direction. After the second exposure of the photoresist film using a second mask in which a line-and-space pattern in a second direction crossing the first direction is formed, the non-exposed portion of the photoresist film is removed to form a photoresist pattern, thereby forming a high density contact hole size. Provides the effect of forming uniformly.

Description

Method for forming semiconductor device

The present invention relates to a method for forming a semiconductor device, and more particularly, to a method for forming a fine contact hole.

Due to the integration of semiconductor devices, the size of the pattern becomes smaller and the spacing between neighboring patterns decreases as the number of patterns to be formed in the limited region increases.

In general, such a semiconductor device is implemented through an exposure process. In brief, the photoresist is coated on the etched layer to be patterned to expose the upper surface of the photoresist through an exposure process, and the properties of the photoresist film are used in a subsequent development process. By forming a photoresist pattern, and etching the layer to be etched by using the photoresist pattern as an etch mask to form an etched layer pattern to realize the pattern to be patterned.

In such an exposure process, resolution and depth of focus (DOF) are known as two important issues.

The dual resolution R may be represented by Equation 1 below. In Equation 1 below, k1 is a constant determined by the type, thickness, etc. of the photoresist film, λ is a wavelength of a light source to be used, and NA (Numerical Aperture) is a numerical aperture of the exposure apparatus.

R = K1λ / NA

As can be seen from Equation 1, the shorter the wavelength λ of the light source to be used and the larger the numerical aperture NA of the exposure apparatus, the smaller the pattern can be implemented on the semiconductor substrate.

Therefore, in the exposure process in which KrF (248 nm), ArF (103 nm), and F2 (157 nm) are generally applied, a pattern realization method using an immersion lithography process or an exposure process using short-ultraviolet ultraviolet rays such as EUV Is being developed.

Among them, immersion lithography does not use air having a refractive index of 1.0 as a medium of an exposure beam intermediate a semiconductor substrate on which an exposure lens and a resist film are formed, but water having a refractive index of 1.0 or more as an intermediate medium. Or by using fluids, such as an organic solvent, even if it uses the light source of the same exposure wavelength, it is the exposure method which acquires the same effect as using a light source of a short wavelength or using the lens of a high numerical aperture, and does not reduce a depth of focus.

In the case of 1: 1 pitch line-and-space pattern using immersion exposure equipment, the limit of resolution is about 40nm based on half pitch.

However, in the case of forming a 1: 1 pitch high-density contact hole pattern, patterning is difficult, and thus it is difficult to secure a resolution for realizing 50 nm based on half pitch.

As such, the wavelength λ of the light source used and the numerical aperture NA of the exposure apparatus are limited due to the high integration of the semiconductor device. As shown in FIG. 1, patterning is possible on the semiconductor substrate. There is a problem that the size is not formed uniformly.

In the present invention, when the high-density contact hole pattern is implemented due to high integration, the size of each contact hole is not uniformly formed due to the limitation of resolution.

The method of forming a semiconductor device of the present invention comprises the steps of applying a photoresist film on the semiconductor substrate on which the etched layer is formed, and firstly exposing the photoresist film by using a first exposure mask in the form of a line and space pattern having a first direction; Secondly exposing the photoresist film by using a second mask on which a line-and-space pattern in a second direction intersecting the first direction is formed, and removing a non-exposed portion of the photoresist film to form a photoresist pattern. Characterized in that.

At this time, the first direction is characterized in that orthogonal to the second direction.

The first direction and the second direction are symmetrically positioned with respect to the y axis.

In addition, the photoresist pattern is characterized in that formed by the immersion lithography process.

In addition, the photosensitive film is characterized in that the positive type (positive type).

And the photoresist pattern is formed using a negative developer.

In addition, the pitch of the line and space pattern is characterized in that 1: 1 to 10.

In the present invention, it is possible to implement the ArF immersion exposure apparatus using a high-density contact hole pattern having a 1: 1 pitch, which can reduce the investment cost of equipment for applying a short wavelength exposure source and for each high-density contact hole. There is an advantage that the size is formed uniformly.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention will be described in detail.

The present invention provides a method for forming a high-density contact hole even by using an immersion exposure apparatus by performing an exposure process on a positive photoresist film and a development process using a negative developer.

Accordingly, the present invention describes an aligned contact hole and a staggered contact hole by way of example, and are not necessarily limited thereto. Those skilled in the art will be aware of the present invention based on the spirit and scope of the present invention. It can be easily changed.

In order to implement the semiconductor device according to the present invention, two exposure masks are required. In this case, the two masks have a pattern of line and space having a pitch of 1: 1 to 10, and the shape of the contact hole pattern to be finally implemented. Accordingly, it is divided as follows, and a method of forming a semiconductor device using the same can be represented as follows.

First, a method of forming a semiconductor device for implementing an aligned contact hole will be described.

FIG. 2A illustrates a layout of an exposure mask used to implement an aligned contact hole according to the present invention, and FIGS. 2B to 2D illustrate a method of forming a semiconductor device using the exposure mask of FIG. 2A.

For convenience, FIGS. 2A to 2D show portions of the mask and the semiconductor substrate, not the entire portion.

As shown in FIG. 2A, the first and second masks are provided with light blocking patterns 20 and 40 in the remaining regions except for the transparent patterns 10 and 30 in the form of lines and the transparent patterns 10 and 30 on the mask substrate. desirable.

In this case, it is preferable that the transparent pattern 10 of the line pattern of the first mask and the transparent pattern 30 of the line pattern of the second mask are perpendicular to each other.

Next, as illustrated in FIG. 2B, the photoresist layer 60 is coated on the semiconductor substrate 50 on which the etched layer (not shown) is formed, and then primary exposure is performed using a first mask.

In this case, the photoresist layer 60 is preferably a positive type, and a light source that has passed through the transparent pattern 10 of the first mask through the first exposure reaches the photoresist layer 60 so that the primary exposure region 65 ), And the photosensitive film of this part is acidified.

Next, as shown in FIG. 2C, the second exposure is performed using the second mask on the photosensitive film 60 on which the first exposure is completed by the first mask.

The light source transmitted through the transparent pattern 30 of the second mask through the secondary exposure reaches the photosensitive film 60, so that the secondary exposure area 70 is formed, and the photosensitive film of this portion is also acidified.

At this time, the non-exposed areas 75 which are not exposed from the first and second exposures are generated. In the present invention, the non-exposed areas 75 are formed because the development process performed by a subsequent process is performed using a negative developer. Removed.

Therefore, as illustrated in FIG. 2D, when the developing process is performed on the photosensitive film 60 having the first and second exposure processes, the photosensitive film pattern 80 from which the photosensitive film of the non-exposed area 75 is removed may be formed. have.

Thereafter, when the etching target layer 55 is etched using the photoresist pattern 80 as an etching mask, an alignment contact hole having a high density can be formed.

Next, a method of forming a semiconductor device using an exposure mask for implementing a staggered contact hole will be described.

3A illustrates a layout of an exposure mask for implementing a staggered contact hole, and FIGS. 3B to 3D illustrate a method of forming a semiconductor device using the mask of FIG. 3A.

For convenience, FIGS. 3A to 3D show a part of the mask and the semiconductor substrate, and not the whole part.

As shown in FIG. 3A, the first and second masks are preferably provided with light blocking patterns 120 and 140 in the remaining regions except for the transparent patterns 110 and 130 having a line shape and the transparent patterns 110 and 130 on the transparent substrate.

In this case, the transparent patterns 110 and 130 are preferably provided in an oblique direction, and the transparent pattern 130 of the second mask is preferably provided to intersect with the transparent pattern 130 of the first mask.

Next, after the photosensitive film 160 is coated on the semiconductor substrate 150 on which the etched layer (not shown) is formed, the first exposure is performed by using the first mask.

At this time, as shown in FIG. 3B, the light source passing through the transparent pattern 110 of the first mask through the primary exposure reaches the photosensitive layer 160 to form the primary exposure region 165, and the photosensitive layer of this portion Is acidified.

Next, secondary exposure is performed using the second mask on the photosensitive film 160 on which the primary exposure is completed by the first mask.

As shown in FIG. 3C, the light source transmitted through the transparent pattern 130 of the second mask through the second exposure reaches the photoresist layer 160 to appear as the secondary exposure region 170, and the photoresist layer of this portion is also acidified. do.

In this case, the non-exposed areas 175 that are not exposed from the first and second exposures are generated. In the present invention, the non-exposed areas 175 are formed because the development process performed by a subsequent process is performed using a negative developer. Will be removed.

Accordingly, as shown in FIG. 3D, when the developing process is performed on the photosensitive film 160 having the first and second exposure processes, the photosensitive film pattern 180 from which the photosensitive film of the non-exposed area 175 is removed may be formed. Can be.

Thereafter, by etching the etched layer 155 using the photoresist pattern 180 as an etch mask, a high density staggered contact hole may be formed.

When the high density contact hole is implemented through the above method, it is possible to prevent the contact hole size from being formed uniformly.

1 is an electron scanning microscope image showing a semiconductor device formed according to the prior art.

2A is a layout of an exposure mask used to implement an aligned contact hole in accordance with the present invention.

2b to 2d illustrate a method of forming a semiconductor device according to the present invention.

3A is a layout of an exposure mask used to implement a staggered contact hole in accordance with the present invention.

3B to 3D illustrate a method of forming a semiconductor device in accordance with the present invention.

Claims (6)

Applying a photosensitive film on the semiconductor substrate on which the etched layer is formed; Firstly exposing the photosensitive film using a first exposure mask in the form of a line-and-space pattern having a first direction; Secondarily exposing the photosensitive film by using a second mask on which a line-and-space pattern in a second direction crossing the first direction is formed; And Forming a photoresist pattern by removing an unexposed portion of the photoresist. The method of claim 1, And the first direction is orthogonal to the second direction. The method of claim 1, And the photosensitive film pattern is formed by an immersion lithography process. The method of claim 1, The photosensitive film is a method of forming a semiconductor device, characterized in that the positive type (positive type). The method of claim 1, The photosensitive film pattern is a semiconductor device forming method, characterized in that formed using a negative developer (negative developer). The method of claim 1, The pitch of the line and space pattern is a method of forming a semiconductor device, characterized in that 1 to 10.
KR1020080101624A 2008-10-16 2008-10-16 Method for forming semiconductor device KR20100042468A (en)

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Application Number Priority Date Filing Date Title
KR1020080101624A KR20100042468A (en) 2008-10-16 2008-10-16 Method for forming semiconductor device

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KR1020080101624A KR20100042468A (en) 2008-10-16 2008-10-16 Method for forming semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107656426A (en) * 2017-11-02 2018-02-02 睿力集成电路有限公司 The forming method of hole pattern and the semiconductor structure with hole pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107656426A (en) * 2017-11-02 2018-02-02 睿力集成电路有限公司 The forming method of hole pattern and the semiconductor structure with hole pattern

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