KR20090073358A - 유기발광소자 및 그의 제조방법 - Google Patents
유기발광소자 및 그의 제조방법 Download PDFInfo
- Publication number
- KR20090073358A KR20090073358A KR1020070141278A KR20070141278A KR20090073358A KR 20090073358 A KR20090073358 A KR 20090073358A KR 1020070141278 A KR1020070141278 A KR 1020070141278A KR 20070141278 A KR20070141278 A KR 20070141278A KR 20090073358 A KR20090073358 A KR 20090073358A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- organic light
- emitting layer
- substrate
- emitting device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000005538 encapsulation Methods 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 42
- 229920000642 polymer Polymers 0.000 claims abstract description 39
- 238000007789 sealing Methods 0.000 claims abstract description 30
- 239000012530 fluid Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 122
- 238000000034 method Methods 0.000 claims description 33
- 239000011259 mixed solution Substances 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 20
- 230000009969 flowable effect Effects 0.000 claims description 17
- 229920001577 copolymer Polymers 0.000 claims description 16
- 239000000565 sealant Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 4
- QTKPMCIBUROOGY-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)F QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 3
- 229920007962 Styrene Methyl Methacrylate Polymers 0.000 claims description 3
- ADFPJHOAARPYLP-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;styrene Chemical compound COC(=O)C(C)=C.C=CC1=CC=CC=C1 ADFPJHOAARPYLP-UHFFFAOYSA-N 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 14
- 238000002161 passivation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 230000032258 transport Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910014456 Ca-Ag Inorganic materials 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- 206010030924 Optic ischaemic neuropathy Diseases 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical compound C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- -1 p-phenylenevinylene Chemical group 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- ZGNCKIDXVHSMJL-UHFFFAOYSA-N 2-methylquinoline-8-carboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=NC(C)=CC=C21 ZGNCKIDXVHSMJL-UHFFFAOYSA-N 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- YXVFYQXJAXKLAK-UHFFFAOYSA-M 4-phenylphenolate Chemical compound C1=CC([O-])=CC=C1C1=CC=CC=C1 YXVFYQXJAXKLAK-UHFFFAOYSA-M 0.000 description 1
- GMSNNWHMDVLYMJ-UHFFFAOYSA-N 5,5-bis(2,2-diphenylethenyl)-2-phenylcyclohexa-1,3-diene Chemical group C1C=C(C=2C=CC=CC=2)C=CC1(C=C(C=1C=CC=CC=1)C=1C=CC=CC=1)C=C(C=1C=CC=CC=1)C1=CC=CC=C1 GMSNNWHMDVLYMJ-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 229910007857 Li-Al Inorganic materials 0.000 description 1
- 229910008447 Li—Al Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/03515—Curing and solidification, e.g. of a photosensitive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (15)
- 기판 일면에 형성된 유기발광층;상기 유기발광층 상부에 상기 유기발광층과 이격 되도록 형성된 봉지부;상기 유기발광층의 측방향에 위치하여 유기발광층을 둘러싸며 상기 기판과 봉지부을 접합하는 실링부;상기 유기발광층과 상기 봉지부 사이에 형성된 유동성 물질을 포함하는 유기발광소자.
- 청구항 1에 있어서,상기 실링부는 광에 의해 경화되는 광 경화성 고분자를 포함하는 유기발광소자.
- 청구항 2에 있어서,상기 광 경화성 고분자는메틸메타크릴레이트-벤질메티크릴레이트 공중합체, 스티렌-아크릴로니트릴 공중합체, 메틸메티크릴레이트-2,2,3,3,3 펜타플루오로프로필메티크릴레이트 공중합체, 2,2,2트리플루오로에틸메타크릴레이트-(헵타플로오로부틸메타크릴레이트)공중합체, 스티렌-메틸메타크릴레이트 고중합체, 2,2,2 트리플로올에틸메타크릴레이트-2,2,3,3,3펜타플루오로프로필메타크릴레이트 공중합체,메틸메티크릴레이트- 2,2,2트리플로오로에틸메타크릴레이트공중합체, 2,2,2트리플루오로에틸메타크릴레이트(헥사플루오로이소메타크릴레이트) 이루어진 구룹에서 선택된 적어도 하나인 유기발광소자.
- 청구항 1에 있어서,상기 유기발광층을 피복하는 보호층을 포함하는 유기발광소자.
- 청구항 1에 있어서,상기 봉지부는 광을 투과하며, 플레이트 형상인 유기발광소자.
- 청구항 1에 있어서,상기 유동성 물질은 비휘발성의 물질을 포함하는 유기발광소자.
- 청구항 6에 있어서,상기 유동성 물질은 액정, 졸 및 유기용매 중 어느 하나를 사용하는 유기발광소자.
- 청구항 7에 있어서,상기 졸은 SiO2, ZrO2, GeO2-SiO2 중 어느 하나를 사용하는 유기발광소자.
- 기판 일면에 유기발광층을 형성하는 단계;상기 유기발광층 상에 광 경화성 고분자와 유동성 물질을 혼합한 혼합 용액을 도포하여 도포층을 형성하는 단계;상기 도포층 상면에 봉지부를 배치하는 단계;상기 봉지부 상부 또는 기판 하부에 노출 영역이 형성된 마스크를 배치하는 단계;상기 마스크 상으로 광을 조사하는 단계;를 포함하는 유기발광소자의 제조 방법.
- 청구항 9에 있어서,상기 혼합 용액을 도포하기 전에 상기 기판의 가장자리 둘레를 따라 띠 형상의 스페이서를 형성하는 단계를 포함하는 유기발광소자의 제조방법.
- 청구항 10에 있어서,상기 스페이서는 실런트, 포토레지스트 중 어느 하나를 사용하여 형성하는 유기발광소자.
- 기판 일면에 유기발광층을 형성하는 단계;상기 유기발광층을 둘러싸는 컵 형상의 내부공간을 갖는 봉지부를 마련하는 단계;광 경화성 고분자와 유동성 물질을 혼합한 혼합 용액을 상기 봉지부의 내부공간에 유입하는 단계;상기 봉지부의 내부공간으로 상기 유기발광층을 인입시키는 단계;상기 봉지부 상부 또는 기판 하부에 노출 영역이 형성된 마스크를 배치시키는 단계;상기 마스크 상으로 광을 조사하는 단계;를 포함하는 유기발광소자의 제조 방법.
- 청구항 12에 있어서,상기 봉지부는 판 형사의 기판의 가장자리에 띠 형상으로 실런트 또는 포토레지스트를 도포하여 컵 형상의 내부공간을 마련하는 유기발광소자의 제조 방법.
- 청구항 9 또는 청구항 12에 있어서,상기 마스크의 노출 영역에 대응하여 광 경화성 고분자를 경화시켜 실링부를 형성하는 유기발광소자의 제조 방법.
- 청구항 9 또는 청구항 12에 있어서,상기 유기발광층을 형성하고, 상기 유기발광층을 피복하는 보호막을 형성하는 유기발광소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070141278A KR100993146B1 (ko) | 2007-12-31 | 2007-12-31 | 유기발광소자 및 그의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070141278A KR100993146B1 (ko) | 2007-12-31 | 2007-12-31 | 유기발광소자 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090073358A true KR20090073358A (ko) | 2009-07-03 |
KR100993146B1 KR100993146B1 (ko) | 2010-11-09 |
Family
ID=41330519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070141278A KR100993146B1 (ko) | 2007-12-31 | 2007-12-31 | 유기발광소자 및 그의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100993146B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8415882B2 (en) | 2010-05-28 | 2013-04-09 | Samsung Display Co., Ltd. | Organic light emitting diode display and method for manufacturing the same |
CN103378302A (zh) * | 2012-04-23 | 2013-10-30 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其封装方法 |
KR20130135791A (ko) * | 2012-06-01 | 2013-12-11 | 주식회사 엘지화학 | 유기전자장치 |
KR102547153B1 (ko) * | 2022-03-04 | 2023-06-26 | 한양대학교 산학협력단 | 유기 발광 복합체 및 이를 포함하는 유기 발광 박막의 패터닝 방법, 이를 포함하는 유기 발광 조성물, 이를 포함하는 유기 발광 소자 |
-
2007
- 2007-12-31 KR KR1020070141278A patent/KR100993146B1/ko active IP Right Grant
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8415882B2 (en) | 2010-05-28 | 2013-04-09 | Samsung Display Co., Ltd. | Organic light emitting diode display and method for manufacturing the same |
US8795018B2 (en) | 2010-05-28 | 2014-08-05 | Samsung Display Co., Ltd. | Organic light emitting diode display and method for manufacturing the same |
EP2390939B1 (en) * | 2010-05-28 | 2017-11-01 | Samsung Display Co., Ltd. | Organic light emitting diode display and method for manufacturing the same |
CN103378302A (zh) * | 2012-04-23 | 2013-10-30 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其封装方法 |
KR20130135791A (ko) * | 2012-06-01 | 2013-12-11 | 주식회사 엘지화학 | 유기전자장치 |
KR102547153B1 (ko) * | 2022-03-04 | 2023-06-26 | 한양대학교 산학협력단 | 유기 발광 복합체 및 이를 포함하는 유기 발광 박막의 패터닝 방법, 이를 포함하는 유기 발광 조성물, 이를 포함하는 유기 발광 소자 |
WO2023167521A1 (ko) * | 2022-03-04 | 2023-09-07 | 한양대학교 산학협력단 | 유기 발광 복합체 및 이를 포함하는 유기 발광 박막의 패터닝 방법, 이를 포함하는 유기 발광 조성물, 이를 포함하는 유기 발광 소자 |
Also Published As
Publication number | Publication date |
---|---|
KR100993146B1 (ko) | 2010-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110137374B (zh) | 有机发光显示装置及其制造方法 | |
KR20140033671A (ko) | 유기발광 표시장치 및 그 제조 방법 | |
KR20070026154A (ko) | 유기 el 소자의 제조 방법, 유기 el 소자 및 유기 el패널 | |
US10135019B2 (en) | Lighting apparatus using organic light-emitting diode and method of fabricating the same | |
TWI628823B (zh) | 發光顯示器裝置及其製造方法 | |
US20180151643A1 (en) | Lighting apparatus using organic light emitting diode and method of fabricating the same | |
KR20140100357A (ko) | 유기 발광 표시 장치 및 이의 제조 방법 | |
KR20120022920A (ko) | 유기 el 표시장치 및 그 제조방법 | |
JP2004319103A (ja) | 有機エレクトロルミネッセンス素子 | |
US9502684B2 (en) | Organic electroluminescence device and method for manufacturing the same | |
KR100993146B1 (ko) | 유기발광소자 및 그의 제조방법 | |
US10529949B2 (en) | Lighting apparatus using organic light-emitting diode and method of fabricating the same | |
TWI231724B (en) | OLED device and EL device | |
JP5193493B2 (ja) | 有機エレクトロルミネッセンス表示装置およびその製造方法 | |
JP2002170664A (ja) | 有機電界発光素子 | |
KR20160095685A (ko) | 표시 장치 및 그 제조 방법 | |
KR101649757B1 (ko) | 유기전계발광소자 및 그 제조방법 | |
KR20090120227A (ko) | 유기발광소자 및 이의 제작 방법 | |
CN100499955C (zh) | 有机电致发光显示装置及其制造方法 | |
KR101368724B1 (ko) | 유기전계발광 표시장치 및 그 제조방법 | |
JP2014072013A (ja) | 有機el表示装置 | |
JP2005213316A (ja) | 有機電界発光素子封止用樹脂組成物および有機電界発光素子 | |
JP2006086084A (ja) | 自発光パネルの製造方法 | |
KR100906428B1 (ko) | 유기 전계 발광 소자 | |
KR20200018797A (ko) | 유기발광표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
A302 | Request for accelerated examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131001 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141006 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151005 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160927 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171011 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181001 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20191125 Year of fee payment: 10 |