KR20090063541A - 에어로졸 증착법을 이용하여 제조된 치밀한 상온 전도성후막 및 이의 제조방법 - Google Patents
에어로졸 증착법을 이용하여 제조된 치밀한 상온 전도성후막 및 이의 제조방법 Download PDFInfo
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- KR20090063541A KR20090063541A KR1020070130938A KR20070130938A KR20090063541A KR 20090063541 A KR20090063541 A KR 20090063541A KR 1020070130938 A KR1020070130938 A KR 1020070130938A KR 20070130938 A KR20070130938 A KR 20070130938A KR 20090063541 A KR20090063541 A KR 20090063541A
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- conductive oxide
- thick film
- powder
- aerosol deposition
- room temperature
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000003801 milling Methods 0.000 claims abstract description 9
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- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 59
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000007581 slurry coating method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002204 La0.8Sr0.2MnO3 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (10)
- 전도성 산화물 원료 분말을 밀링으로 혼합한 후 하소(calcining)하여 전도성 산화물을 제조하는 단계(단계 1);상기 단계 1에서 제조된 전도성 산화물을 재밀링하여 전도성 산화물 분말을 제조하는 단계(단계 2); 및상기 단계 2에서 제조된 전도성 산화물 분말을 기판상에 에어로졸 증착법으로 증착하는 단계(단계 3)를 포함하는 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 3에 의해 형성된 후막이 증착된 기판을 300~700 ℃의 온도로 열처리하는 단계를 더 포함하는 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 1의 원료 분말은 La2O3 또는 La(CH3COO)3·6H2O 및 NiO, Ni(CH3COO)4·4H2O 또는 Ni(NO3)4·6H2O인 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 1의 원료 분말은 1:1의 비율로 혼합되는 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 1의 원료 분말의 하소는 600~900 ℃에서 수행되는 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 2의 전도성 산화물 분말의 평균 입경은 0.5~5 ㎛인 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 3의 기판은 사파이어, 실리콘, 지르코니아, 티타늄 및 스테인레스 스틸로 구성되는 군으로부터 선택되는 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 3의 에어로졸 증착은 100~500 m/s로 분말을 가속시킴에 의하여 수행되는 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항에 있어서, 상기 단계 3의 에어로졸 증착에 의하여 형성된 후막의 두께는 1~50 ㎛인 것을 특징으로 하는 에어로졸 증착법을 이용한 치밀한 상온 전도성 산화물 후막의 제조방법.
- 제 1항 내지 제 9항 중 어느 한 항의 방법을 이용하여 제조된 치밀한 상온 전도성 산화물 후막.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101054005B1 (ko) * | 2009-03-30 | 2011-08-04 | 한국기계연구원 | Lno 전도성 산화물이 코팅된 상안정성 및 전기전도성이 향상된 스테인레스 스틸 금속 접속자 |
KR20160084510A (ko) | 2014-10-31 | 2016-07-14 | 한국기계연구원 | 개선된 표면 거칠기를 가지는 후막 코팅방법 |
KR20170044363A (ko) * | 2015-10-15 | 2017-04-25 | 한밭대학교 산학협력단 | 시광안료를 이용한 양산 겸용 우산 |
KR102025337B1 (ko) | 2019-03-15 | 2019-09-25 | 국방과학연구소 | 세라믹 폴리머 혼합 코팅층을 포함하는 커패시터용 유전체 박막 및 이의 제조 방법 |
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KR102084426B1 (ko) | 2018-11-22 | 2020-03-04 | (주)코미코 | 에어로졸 증착법을 이용하여 제조된 세라믹 후막 및 이의 제조방법 |
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JP2006097087A (ja) | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 成膜方法及び成膜装置 |
JP4450726B2 (ja) | 2004-11-18 | 2010-04-14 | 日立ビアメカニクス株式会社 | 層間接続装置および層間接続方法 |
US7479464B2 (en) * | 2006-10-23 | 2009-01-20 | Applied Materials, Inc. | Low temperature aerosol deposition of a plasma resistive layer |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101054005B1 (ko) * | 2009-03-30 | 2011-08-04 | 한국기계연구원 | Lno 전도성 산화물이 코팅된 상안정성 및 전기전도성이 향상된 스테인레스 스틸 금속 접속자 |
KR20160084510A (ko) | 2014-10-31 | 2016-07-14 | 한국기계연구원 | 개선된 표면 거칠기를 가지는 후막 코팅방법 |
KR20170044363A (ko) * | 2015-10-15 | 2017-04-25 | 한밭대학교 산학협력단 | 시광안료를 이용한 양산 겸용 우산 |
KR102025337B1 (ko) | 2019-03-15 | 2019-09-25 | 국방과학연구소 | 세라믹 폴리머 혼합 코팅층을 포함하는 커패시터용 유전체 박막 및 이의 제조 방법 |
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