KR20090062886A - 내플라즈마 평가방법 - Google Patents
내플라즈마 평가방법 Download PDFInfo
- Publication number
- KR20090062886A KR20090062886A KR1020070130359A KR20070130359A KR20090062886A KR 20090062886 A KR20090062886 A KR 20090062886A KR 1020070130359 A KR1020070130359 A KR 1020070130359A KR 20070130359 A KR20070130359 A KR 20070130359A KR 20090062886 A KR20090062886 A KR 20090062886A
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- KR
- South Korea
- Prior art keywords
- plasma
- specimen
- chamber
- withstand voltage
- evaluation method
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (4)
- 반도체를 포함한 정밀기기에 사용되는 부품의 코팅성능을 평가하는 내플라즈마 평가방법에 있어서,코팅 부품의 시편을 제조하는 과정(P1)과;제조된 시편의 내전압을 측정하는 초기 내전압측정과정(P2)과;플라즈마발생 챔버의 운전조건을 실험환경으로 설정하는 과정(P3)과;설정된 챔버에 시편을 안치하고 플라즈마에 노출시켜 반응이 이루어지도록 하는 내플라즈마 실험과정(P4)과;상기 플라즈마 반응이 일어난 시편을 꺼내어 내전압을 측정하는 2차 내전압측정과정(P5)과;상기 측정된 2차내전압측정값과 초기내전압측정값을 대비하여 결과를 도출하는 내플라즈마 평가과정(P6);을 포함하여 이루어짐을 특징으로 하는 내플라즈마 평가방법.
- 제1항에 있어서,상기 플라즈마 챔버의 설정과정은,챔버내에 설정하고자 하는 플라즈마 표준밀도값을 선택하는 단계(S1)와;플라즈마 챔버 내의 파라메타를 실험표준값으로 유지시키는 단계(S2)와;플라즈마 발생장치의 세기를 조절하여 플라즈마 챔버내의 플라즈마밀도를 선 택된 표준밀도값과 일치시키는 단계(S3);를 포함하여 이루어짐을 특징으로 하는 내플라즈마 평가방법.
- 제1항에 있어서,상기 내플라즈마 실험과정은,플라즈마 챔버에 시편을 10분 노출시킨 것을 1회로 하여, 다수회가 반복 실행되도록 한 것을 특징으로 하는 내플라즈마 평가방법.
- 제3항에 있어서,상기 노출횟수의 간격은 최소한 30분이상 유지하도록 하여 시편표면의 반응이 충분히 완료된 후 실험환경설정과정을 수행한 플라즈마에 재노출되도록 한 것을 특징으로 하는 내플라즈마 평가방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020070130359A KR100934768B1 (ko) | 2007-12-13 | 2007-12-13 | 내플라즈마 평가방법 |
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KR1020070130359A KR100934768B1 (ko) | 2007-12-13 | 2007-12-13 | 내플라즈마 평가방법 |
Publications (2)
Publication Number | Publication Date |
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KR20090062886A true KR20090062886A (ko) | 2009-06-17 |
KR100934768B1 KR100934768B1 (ko) | 2009-12-30 |
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KR1020070130359A KR100934768B1 (ko) | 2007-12-13 | 2007-12-13 | 내플라즈마 평가방법 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101160129B1 (ko) | 2010-04-20 | 2012-06-26 | 한국세라믹기술원 | 내플라즈마성 평가방법 |
KR102194951B1 (ko) | 2019-03-18 | 2020-12-24 | 한국세라믹기술원 | 내플라즈마 세라믹의 가속수명 시험방법 |
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DE3340719A1 (de) * | 1983-11-10 | 1985-05-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur messung des elektrischen widerstandes von unter dem einfluss eines plasmas hergestellten, duennen, metallischen schichten waehrend ihrer herstellung |
JP3642146B2 (ja) | 1997-03-24 | 2005-04-27 | 株式会社神戸製鋼所 | 半導体装置の評価方法 |
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