KR20090059511A - Method for fabricating organic thin film transistor - Google Patents

Abstract

A method for manufacturing an organic thin film transistor is provided to improve a coating characteristic by weakening a cohesive force while maintaining a wetting characteristic by processing other solvent on a surface of the substrate. A source electrode and a drain electrodes are formed on a substrate(101) and are separated with a regular interval. The substrate with the source and drain electrodes are processed with the other solvent. An organic semiconductor layer is formed on the substrate and the source and drain electrodes. A gate insulating layer(111) is formed on the organic semiconductor layer. A gate electrode(113) is formed on the gate insulating layer. The organic semiconductor layer is made of LCPBC(Liquid Crystalline Polyfluorene Block copolymer), pentacene, and thiophene oligomer.

Description

Organic thin film transistor manufacturing method {Method for fabricating Organic Thin Film Transistor}

The present invention relates to a method for manufacturing an organic thin film transistor, and more particularly, to a method for manufacturing an organic thin film transistor having improved coating characteristics of a low concentration organic semiconductor material.

In general, a thin film transistor is used as a switching element in an image display display. Among the thin film transistors, an organic thin film transistor uses a semiconducting organic material as a semiconductor layer material, and uses a flexible substrate instead of a glass substrate. Except for the point, it has a structurally similar form compared to the silicon thin film transistor.

In addition, as the interest of the thin film transistor technology to which the liquid material process is applied increases, there are many developments of materials capable of having high performance thin film transistor characteristics. However, when the cost of the material is very high and made of a high concentration of material, the coating characteristics are normal. Most likely you can have one.

However, a technique of coating a low concentration organic film having a low material cost has been proposed because of the disadvantage that the material cost is very high when applying such a high concentration material.

In this regard, the organic thin film transistor manufacturing method according to the prior art using the technique of coating a low concentration organic film will be described with reference to FIGS. 1 and 2 as follows.

1 is a cross-sectional view illustrating an organic thin film transistor and a method of manufacturing the same according to the prior art, which is a cross-sectional view schematically showing a thin film form deposited when coating a low-concentration organic semiconductor material.

FIG. 2 is a cross-sectional view illustrating a method of manufacturing an organic thin film transistor according to the prior art, and is a cross-sectional view schematically illustrating a phenomenon in which a ratio of a solvent of a liquid material itself increases in a thin film form deposited when coating a low-concentration organic semiconductor material. to be.

The organic thin film transistor according to the related art forms source / drain electrodes 13a and 13b formed of a transparent conductive film, for example, an ITO film or an IZO film, on the lower substrate 11, as shown in FIG.

Subsequently, a low concentration liquid organic semiconductor material of about 2 wt% is coated on the lower substrate 11 including the source / drain electrodes 13a and 13b to form the organic semiconductor layer 15. At this time, since the organic semiconductor layer 15 is coated at a low concentration of about 2 wt%, it is deposited only on the surfaces of the source / drain electrodes 13a and 13b. This is because the source / drain electrodes 13a and 13b, which are metals, and the organic semiconductor 15 are directly bonded to each other, so that the contact resistance increases, resulting in a low current crowding phenomenon in the output characteristics of the TFTs. There is a problem that can not block the carrier in the state.

However, according to the organic thin film transistor manufacturing method according to the prior art prepared as described above has the following problems.

In the prior art, in the case of depositing organic semiconductor materials at low concentrations, the material cost is reduced, but the deposition characteristics are deteriorated, speed boat property defects appear, and overall film deposition uniformity is low. In particular, concentration control is a factor for controlling the performance and thickness of organic semiconductor materials.

Therefore, such a problem appears when the concentration is lowered from the existing high concentration of 4 wt% to 2 wt%, and the ratio of the solvent 17 of the liquid material itself is increased due to this low concentration, as shown in FIG. 2. As described above, due to the effect of the solvent on the surface of the membrane, agglomeration occurs, and thus a large number of organic coating defects occur.

On the other hand, the organic semiconductor formed by coating the entire surface of the lower substrate 11 using an organic semiconductor material to form an organic semiconductor layer because the interface characteristics of the lower substrate 11 and the self-drain electrodes 13a and 13b are different from each other. In the case of the layer 15, in particular, the data wiring (not shown) or the portion formed around the source and drain electrodes 13a and 13b are rolled up on the wiring (not shown) or the electrode, so that the data wiring (not shown) or the source is formed. And a portion that is not formed on the substrate around the drain electrode appears.

As a result of this phenomenon, the organic semiconductor material layer that should be formed in the entire area where the two electrodes are contacted at the same time as the contact between the source and drain electrodes is separated, and thus the channel is not formed when the thin film transistor is completed. The production failure is reduced by the problem of unstable driving.

Accordingly, the present invention has been made to solve the above problems according to the prior art, the object of the present invention is to improve the coating of the organic semiconductor layer by suppressing coating defects due to the solvent effect on the substrate and the electrode surface through other solvent treatment. The present invention provides a method for manufacturing an organic thin film transistor.

In addition, another object of the present invention is to provide an organic thin film transistor manufacturing method which can improve the production yield by reducing the driving failure of the thin film transistor by increasing the coating property of the organic semiconductor material.

In addition, another object of the present invention is to provide a method of manufacturing a liquid crystal display device using an organic thin film transistor having improved coating characteristics of a low concentration organic semiconductor material.

The organic thin film transistor manufacturing method according to the present invention for achieving the above object comprises the steps of forming a source electrode and a drain electrode spaced apart from each other at a predetermined interval on the substrate; Solvent-treating the substrate on which the source / drain electrodes are formed; Forming an organic semiconductor layer on the substrate and the source / drain electrodes; Forming a gate insulating film on the organic semiconductor layer; And forming a gate electrode on the gate insulating film.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device using an organic thin film transistor, the method including: forming a source electrode and a drain electrode spaced apart from each other at a predetermined interval on a first substrate; Solvent-treating the substrate on which the source / drain electrodes are formed; Forming an organic semiconductor layer on the substrate and the source / drain electrodes; Forming a gate insulating film on the organic semiconductor layer; Forming a gate electrode on the gate insulating film; Forming a passivation layer on the front surface of the first substrate including the gate electrode and exposing the drain electrode; Forming a pixel electrode on the passivation layer, the pixel electrode being electrically connected to the drain electrode; Forming a black matrix on the second substrate, the black matrix shielding light at a portion other than the pixel region; Forming a color filter layer for realizing color on the second substrate; And forming a liquid crystal layer between the first substrate and the second substrate.

According to the organic thin film transistor manufacturing method according to the present invention has the following effects.

The organic thin film transistor manufacturing method according to the present invention is a low-concentration liquid organic semiconductor material is coated after drying the other solvent using a dichloromethane (dichloromethane) solvent on the surface of the substrate so as to seamlessly coated on the electrode and the substrate due to the difference in surface energy. The coating properties of the low-concentration organic semiconductor material formed afterwards can be improved.

In addition, the present invention can improve the coating properties by maintaining the wettability (wetting) and weakening the cohesive force by the other solvent treatment on the surface of the substrate to improve the coating defects due to the solvent effect.

In addition, the organic thin film transistor manufacturing method according to the present invention can improve the production yield by reducing the poor driving of the thin film transistor by increasing the coating property of the organic semiconductor material.

Hereinafter, a method of manufacturing an organic thin film transistor according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

3A to 3F are cross-sectional views of a manufacturing process for explaining a method of manufacturing an organic thin film transistor according to the present invention.

As shown in FIG. 3D, the organic thin film transistor according to an exemplary embodiment of the present invention has a buffer film 103 formed of an organic material on a substrate 101 and transparency in island shapes on the buffer film 103, respectively. The organic layer formed on the buffer layer 103 including the entire layer, that is, source / drain electrodes 105a and 105b formed of indium tin oxide (ITO) or indium zinc oxide (IZO), and the source / drain electrodes 105a and 105b. The gate electrode 113 formed on the gate insulating film 111a so as to overlap the semiconductor layer 109a, the gate insulating film 111a formed on the organic semiconductor layer 109a, and the source / drain electrodes 105a and 105b. It is configured to include).

Referring to the organic thin film transistor manufacturing method according to the present invention configured as described above are as follows.

As shown in FIG. 3A, a buffer layer 103 is formed on a substrate 101 made of glass or transparent plastic.

At this time, the buffer film 103 is deposited to improve the crystal growth of the organic semiconductor layer to be formed later, the silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxide (SiOx) and silicon nitride (SiNx) is stacked The inorganic insulating material of any one of the double layers is formed, or is formed using an organic insulating material such as BCB (Benzocyclobutene), acrylic material, polyimide, polymethylmethacrylate (PMMA).

Next, a transparent conductive film 105 is formed on the buffer film 103. In this case, the transparent conductive film 105 is generally used in a device applied to a liquid crystal display device, a transparent material such as indium tin oxide (ITO) or indium zinc oxide (IZO), which is easy to form a film, or any one of these films. One of chromium (Cr) and molybdenum (Mo) is formed using a stacked double film.

Meanwhile, when a metal layer such as chromium (Cr) or molybdenum (Mo) is deposited under the transparent conductive film 105 to form a source / drain electrode in a double structure in which the transparent conductive film and the metal film are stacked, the source / drain of the organic thin film transistor Line resistance to the electrode can be reduced.

Subsequently, as shown in FIG. 3B, a photoresist (not shown) is coated on the transparent conductive film 105, and a photomask (not shown) having a predetermined pattern formed on the photoresist is aligned. Thereafter, ultraviolet rays are irradiated and exposed, followed by development to pattern the photoresist.

Next, the transparent conductive film 105 is selectively etched using the patterned photoresist as a mask to form source / drain electrodes 105a and 105b and the photoresist is removed. At this time, since the source / drain electrode, which is a metal, and the organic semiconductor to be formed in a subsequent process are directly bonded, the contact resistance increases, resulting in a low voltage current crowding phenomenon in the output characteristics of the TFT and the TFT off. There is a problem that can not block the carrier in the state.

In order to prevent the contact resistance from increasing when the source / drain electrodes and the organic semiconductor are directly bonded to each other, as shown in FIG. 3C, a subsequent process is performed on the surfaces of the source / drain electrodes 105a and 105b and the buffer film 103. In order to improve the coating of the liquid organic semiconductor material to be formed in the other solvent treatment 107 is carried out.

In this case, the other solvent treatment 107 first spin-coating the dichloromethane (dichloromethane) solvent and then dried in an N ₂ atmosphere. In this case, the solvent used in the other solvent treatment 107 is not limited to a dichloromethane solvent, and other solvents may be used.

In addition, the other solvent treatment 107 means that it is used as the main solvent (solvent) of the organic semiconductor material. If several kinds of solvents are mixed, it is irrelevant to any of the mixed solvents.

The other solvent treatment 107 may be spin coated or dipping, and may not be formed under any conditions since it does not form a specific film. In particular, since the solvent is treated in advance to make the film properties of the substrate the same as the solvent properties, specific process conditions are not required. However, it is preferable to volatilize through sufficient nitrogen (Na ₂ ) drying so that the remaining solvent cannot act as an impurity between the electrode and the organic conductor.

Next, as shown in FIG. 3D, a low concentration of liquid organic semiconductor material is coated on the source / drain electrodes 105a and 105b including the solvent-treated buffer film 103 to form an organic semiconductor layer 109. . In this case, as an organic material to be used as the organic semiconductor layer 109, LCPBC (Liquid Crystalline Polyfluorene Block copolymer), pentacene (Pentacene), polythiophene (polythiophene) is used. At this time, the concentration of the liquid organic semiconductor material is preferably about 0.1 to 10 wt%, and the thickness is about 300 to 2000 Pa.

In addition, the organic semiconductor layer 109 is formed using an inkjet apparatus, a nozzle coating apparatus, a bar coating apparatus, a slit coating apparatus, or a spin coating apparatus.

Subsequently, although not shown in the drawings, a photoresist (not shown) is applied on the organic semiconductor layer 109, and a photomask (not shown) having a predetermined pattern formed on the photoresist is aligned. Ultraviolet rays are exposed to light, followed by development to pattern the photoresist.

3E, the organic semiconductor layer 109 is selectively etched using the patterned photoresist as a mask to form the organic semiconductor layer pattern 109a and the patterned photoresist is removed.

Subsequently, as shown in FIG. 3F, an inorganic insulating material is deposited on the entire surface of the substrate 101 including the organic semiconductor layer pattern 109a or an organic insulating material is applied to form the gate insulating film 111.

In this case, the gate insulating layer 111 forms an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or BCB (Benzocyclobutene), acrylic material, polyimide, polymethylmethacrylate (PMMA) It is formed using an organic insulating material such as. However, in this case, it is preferable to form a gate insulating film using an organic insulating material rather than an inorganic insulating material for contact characteristics with an organic semiconductor layer to be formed later.

Next, as illustrated in FIG. 3G, a metal material is deposited on the gate insulating layer 111. In this case, the metal material is made of at least one or one or more of metal materials such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy (Al alloy), tungsten (W) series. .

Subsequently, although not shown in the drawings, a photoresist is applied on the metal material layer, and then a photomask (not shown) in which a predetermined pattern is formed on the photoresist is aligned, exposed to ultraviolet light, and then developed. The photoresist is patterned.

Thereafter, the metal material layer is selectively etched using the patterned photoresist as a mask to form a gate electrode 113 to overlap with the source / drain electrodes 105a and 105b, thereby completing an organic thin film transistor. .

In this case, when the gate electrode 113, the gate insulating film 111, the source / drain electrodes 105a and 105b and the organic semiconductor layer pattern 109a of the organic thin film transistor are all formed of an organic material, a low temperature process is possible. The substrate 101 may be used as a plastic substrate or a film having a flexible property.

On the other hand, the liquid crystal display device manufacturing method applying the organic thin film transistor manufacturing method according to the present invention configured as described above is as follows.

4 is a cross-sectional view of a liquid crystal display device to which an organic thin film transistor manufacturing method according to the present invention is applied.

Referring to FIG. 3A, a buffer layer 103 is formed on a lower substrate 101 made of glass or transparent plastic.

At this time, the buffer film 103 is deposited to improve the crystal growth of the organic semiconductor layer to be formed later, the silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxide (SiOx) and silicon nitride (SiNx) is stacked The inorganic insulating material of any one of the double layers is formed, or is formed using an organic insulating material such as BCB (Benzocyclobutene), acrylic material, polyimide, polymethylmethacrylate (PMMA).

Next, a transparent conductive film 105 is formed on the buffer film 103. In this case, the transparent conductive film 105 is generally used in a device applied to a liquid crystal display device, a transparent material such as indium tin oxide (ITO) or indium zinc oxide (IZO), which is easy to form a film, or any one of these films. One of chromium (Cr) and molybdenum (Mo) is formed using a stacked double film.

Meanwhile, when a metal layer such as chromium (Cr) or molybdenum (Mo) is deposited under the transparent conductive film 105 to form a source / drain electrode in a double structure in which the transparent conductive film and the metal film are stacked, the source / drain of the organic thin film transistor Line resistance to the electrode can be reduced.

Subsequently, referring to FIG. 3B, a photoresist (not shown) is coated on the transparent conductive film 105, and a photomask (not shown) having a predetermined pattern formed on the photoresist is aligned. Ultraviolet rays are exposed to light, followed by development to pattern the photoresist.

Next, the transparent conductive film 105 is selectively etched using the patterned photoresist as a mask to form source / drain electrodes 105a and 105b and the photoresist is removed.

Next, referring to FIG. 3C, another solvent treatment 107 is applied to the surface of the buffer film 103 on which the source / drain electrodes 105a and 105b are formed to improve the coating of the liquid organic semiconductor material to be formed in a subsequent process. Proceed.

In this case, the other solvent treatment 107 first spin-coating the dichloromethane (dichloromethane) solvent and then dried in an N ₂ atmosphere. In this case, the solvent used in the other solvent treatment 107 is not limited to a dichloromethane solvent, and other solvents may be used.

In addition, the other solvent treatment 107 means that it is used as the main solvent (solvent) of the organic semiconductor material. If several kinds of solvents are mixed, it is irrelevant to any of the mixed solvents.

The other solvent treatment 107 may be spin coated or dipping, and may not be formed under any conditions since it does not form a specific film. In particular, since the solvent is treated in advance to make the film properties of the substrate the same as the solvent properties, specific process conditions are not required. However, it is preferable to volatilize through sufficient nitrogen (Na ₂ ) drying so that the remaining solvent cannot act as an impurity between the electrode and the organic conductor.

Next, referring to FIG. 3D, a low concentration liquid organic semiconductor material is coated on the source / drain electrodes 105a and 105b including the solvent-treated buffer film 103 to form an organic semiconductor layer 109. In this case, as an organic material to be used as the organic semiconductor layer 109, LCPBC (Liquid Crystalline Polyfluorene Block copolymer), pentacene (Pentacene), polythiophene (polythiophene) and the like are used. At this time, the concentration of the liquid organic semiconductor material is preferably about 0.1 to 10 wt%, and the thickness is about 300 to 2000 Pa.

In addition, the organic semiconductor layer 109 is formed using an inkjet apparatus, a nozzle coating apparatus, a bar coating apparatus, a slit coating apparatus, or a spin coating apparatus.

Subsequently, although not shown in the drawings, a photoresist (not shown) is applied on the organic semiconductor layer 109, and a photomask (not shown) having a predetermined pattern formed on the photoresist is aligned. Ultraviolet rays are exposed to light, followed by development to pattern the photoresist.

Next, referring to FIG. 3E, the organic semiconductor layer 109 is selectively etched using the patterned photoresist as a mask to form the organic semiconductor layer pattern 109a and to remove the patterned photoresist.

Subsequently, referring to FIG. 3F, an inorganic insulating material is deposited on the entire surface of the substrate 101 including the organic semiconductor layer pattern 109a or an organic insulating material is coated to form the gate insulating film 111.

In this case, the gate insulating layer 111 forms an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or BCB (Benzocyclobutene), acrylic material, polyimide, polymethylmethacrylate (PMMA) It is formed using an organic insulating material such as. However, in this case, it is preferable to form a gate insulating film using an organic insulating material rather than an inorganic insulating material for contact characteristics with an organic semiconductor layer to be formed later.

Next, referring to FIG. 3G, a metal material is deposited on the gate insulating layer 111. In this case, the metal material is made of at least one or one or more of metal materials such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy (Al alloy), tungsten (W) series. .

Subsequently, although not shown in the drawings, a photoresist is applied on the metal material layer, and then a photomask (not shown) in which a predetermined pattern is formed on the photoresist is aligned, exposed to ultraviolet light, and then developed. The photoresist is patterned.

Thereafter, the metal material layer is selectively etched using the patterned photoresist as a mask to form a gate electrode 113 to overlap with the source / drain electrodes 105a and 105b, thereby completing an organic thin film transistor. .

In this case, when the gate electrode 113, the gate insulating film 111, the source / drain electrodes 105a and 105b and the organic semiconductor layer pattern 109a of the organic thin film transistor are all formed of an organic material, a low temperature process is possible. The substrate 101 may be used as a plastic substrate or a film having a flexible property.

As shown in FIG. 4, the passivation layer 115 is formed of an organic insulating material such as BCB, acrylic material, or polyimide on the lower substrate 101 on which the organic thin film transistor is formed.

Next, a transparent layer such as indium tin oxide (ITO) or indium zinc oxide (IZO) is formed in the pixel region of the passivation layer 115 to be connected to the drain electrode 105a through the contact hole 115a formed in the passivation layer 115. The pixel electrode 117 made of a material is formed.

On the other hand, the upper substrate 12 which is opposed to the lower substrate 101 is bonded to the black matrix 123 that shields light from the portion except the pixel region is formed.

Next, a color filter layer 125 for realizing color is formed on the upper substrate 121, and a common electrode 127 for driving pixels is formed thereon.

Subsequently, the upper substrate 121 and the lower substrate 101 are bonded to each other with a predetermined space, and the liquid crystal layer 131 is formed between the substrates, thereby completing the manufacture of the liquid crystal display device using the organic thin film transistor.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

Accordingly, the scope of the present invention is not limited thereto, but various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims are also within the scope of the present invention.

FIG. 1 is a cross-sectional view illustrating a method of manufacturing an organic thin film transistor according to the prior art, and is a cross-sectional view schematically illustrating a thin film form deposited during coating of a low-concentration organic semiconductor material.

FIG. 2 is a cross-sectional view illustrating a method of manufacturing an organic thin film transistor according to the prior art, and is a cross-sectional view schematically illustrating a phenomenon in which the solvent of the liquid material itself increases in the form of a thin film deposited when coating a low-concentration organic semiconductor material. to be.

3A to 3G are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to the present invention.

4 is a cross-sectional view of a liquid crystal display device to which an organic thin film transistor according to the present invention is applied.

*** Explanation of symbols for the main parts of the drawing ***

101 substrate 103 buffer film

105: transparent conductive film 105a: source electrode

105b: drain electrode 107: other solvent treatment

109: organic semiconductor layer 109a: organic semiconductor layer pattern

111: gate insulating film 113: gate electrode

115: protective film 117: pixel electrode

121: upper substrate 123: black matrix

125: color filter layer 127: common electrode

Claims (15)

Forming a source electrode and a drain electrode spaced apart from each other at a predetermined interval on the substrate; Solvent-treating the substrate on which the source / drain electrodes are formed; Forming an organic semiconductor layer on the substrate and the source / drain electrodes; Forming a gate insulating film on the organic semiconductor layer; And Forming a gate electrode on the gate insulating film; and forming a gate electrode on the gate insulating film. The method of claim 1, wherein the other solvent treatment is spin-coating a dichloromethane solvent and then dried in an N ₂ atmosphere. The method of claim 1, wherein the source / drain electrode is an ITO film, an IZO film, or a double film in which any one of chromium (Cr) and molybdenum (Mo) is laminated. . The method of claim 1, wherein the organic semiconductor layer is an LCPBC (Liquid Crystalline Polyfluorene Block copolymer), pentacene (pentacene), thiophene oligomer (thiophene oligomer). The method of claim 1, wherein the organic semiconductor layer has a concentration of 0.1 to 10 wt%, the thickness of 300 An organic thin film transistor manufacturing method, characterized in that it is ~ 2000 kPa. The organic semiconductor layer of claim 1, wherein the organic semiconductor layer is formed using one of an inkjet apparatus, a nozzle coating apparatus, a bar coating apparatus, a slit coating apparatus, or a spin coating apparatus. Organic thin film transistor manufacturing method characterized in that. The method of claim 1, wherein the gate insulating film is an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) or BCB (Benzocyclobutene), acrylic material, polyimide, polymethylmethacrylate (PMMA) and Organic thin film transistor manufacturing method, characterized in that one of the same organic insulating material. The method of claim 1, wherein the gate electrode is made of at least one of metal materials such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy (Al alloy), tungsten (W) series, or the like. An organic thin film transistor manufacturing method comprising at least one. Forming a source electrode and a drain electrode spaced apart from each other at a predetermined interval on the first substrate; Solvent-treating the substrate on which the source / drain electrodes are formed; Forming an organic semiconductor layer on the substrate and the source / drain electrodes; Forming a gate insulating film on the organic semiconductor layer; Forming a gate electrode on the gate insulating film; Forming a passivation layer on the front surface of the first substrate including the gate electrode and exposing the drain electrode; Forming a pixel electrode on the passivation layer, the pixel electrode being electrically connected to the drain electrode; Forming a black matrix on the second substrate, the black matrix shielding light at a portion other than the pixel region; Forming a color filter layer for realizing color on the second substrate; And Forming a liquid crystal layer between the first substrate and the second substrate; liquid crystal display device manufacturing method using an organic thin film transistor, characterized in that it comprises a. The method of claim 9, wherein the other solvent treatment is a spin-coating dichloromethane solvent and dried in an N ₂ atmosphere to apply an organic thin film transistor. 10. The organic thin film transistor according to claim 9, wherein the source / drain electrode is an ITO film, an IZO film, or a double film in which any one of chromium (Cr) and molybdenum (Mo) is laminated. Liquid crystal display device manufacturing method. 10. The method of claim 9, wherein the organic semiconductor layer is a liquid crystal line polyfluorene block copolymer (LCPBC), a pentacene, or a thiophene oligomer. 11. The method of claim 9, wherein the organic semiconductor layer is formed using one of an inkjet apparatus, a nozzle coating apparatus, a bar coating apparatus, a slit coating apparatus or a spin coating apparatus. A liquid crystal display device manufacturing method using an organic thin film transistor, characterized in that. The method of claim 9, wherein the gate insulating film is an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) or BCB (Benzocyclobutene), acrylic material, polyimide, polymethylmethacrylate (PMMA) and A liquid crystal display device manufacturing method using an organic thin film transistor, characterized in that one of the same organic insulating material. 10. The method of claim 9, wherein the gate electrode is made of at least one of metal materials such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy (Al alloy), tungsten (W) series, or the like. A liquid crystal display device manufacturing method using an organic thin film transistor, characterized in that composed of one or more.

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