KR20090054535A - Method for manufacturing wafer type solar cell - Google Patents

Abstract

A method for manufacturing a wafer type solar cell is provided to remove a defect in a PN junction layer by inducing a Si-H bond by supplying a hydrogen ion to the PN junction layer through a thermal process. A PN junction layer consisting of a P type semiconductor layer and an N type semiconductor layer(200) formed in an upper part of the P-type semiconductor layer is formed by doping the N type dopant in the upper part of a P type semiconductor substrate(100). An anti-reflective layer(300) is formed in an upper side of the N type semiconductor layer. The N type dopant is activated and the defect in the PN junction layer is removed by performing a thermal process. A front electrode(500) connected to the N type semiconductor layer is formed. A rear electrode(600) connected to the P type semiconductor layer is formed.

Description

Method for manufacturing substrate type solar cell {Method for manufacturing Wafer type Solar Cell}

The present invention relates to a solar cell, and more particularly to a substrate type solar cell.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.

The structure and principle of the solar cell will be described briefly. The solar cell has a PN junction structure in which a P (positive) type semiconductor and an N (negative) type semiconductor are bonded to each other. Holes and electrons are generated in the semiconductor by the energy of the incident solar light. At this time, the holes (+) are moved toward the P-type semiconductor by the electric field generated in the PN junction. Negative (-) is moved toward the N-type semiconductor to generate a potential to produce power.

Such solar cells may be classified into thin film solar cells and substrate solar cells.

The thin film solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass, the substrate solar cell is a solar cell manufactured by using a semiconductor material such as silicon itself as a substrate.

The substrate type solar cell has a disadvantage in that a thicker and expensive material is used as compared to the thin film type solar cell, but the cell efficiency is excellent.

Hereinafter, a conventional substrate type solar cell will be described with reference to the drawings.

1 is a schematic cross-sectional view of a conventional substrate-type solar cell.

As can be seen in Figure 1, the conventional substrate-type solar cell is a P-type silicon layer 10, N-type silicon layer 20, the antireflection layer 30, P ⁺ type silicon layer 40, the front electrode 50 And a back electrode 60.

The P-type silicon layer 10 and the N-type silicon layer 20 formed on the upper surface of the P-type silicon layer 10 form a PN junction structure of the solar cell, and the upper surfaces of the P-type silicon layer 10 and the N-type silicon layer 20 are It is formed in an uneven structure so that sunlight can be absorbed into the solar cell as much as possible.

The anti-reflection layer 30 serves to minimize reflection of incident light and to prevent electrons formed in the N-type silicon layer 20 from being recombined and extinguished.

The P ⁺ type silicon layer 40 is formed on the bottom surface of the P type silicon layer 10 to prevent electrons formed by sunlight from being recombined and extinguished.

The front electrode 50 extends from the top of the anti-reflection layer 30 to the N-type silicon layer 20, and the back electrode 60 is formed on the bottom surface of the P ⁺ type silicon layer 40. .

2A through 2F are cross-sectional views illustrating a manufacturing process of a conventional substrate type solar cell as shown in FIG. 1.

First, as shown in FIG. 2A, after the P-type silicon substrate 10a is prepared, the upper surface of the P-type silicon substrate 10a is etched into an uneven structure.

Next, as shown in FIG. 2B, the N-type dopant is diffused onto the P-type silicon substrate 10a to dope the N-type silicon 20a to the surface of the P-type silicon substrate 10a.

In this process, the N-type dopant is supplied to the P-type silicon substrate 10a by supplying an N-type dopant gas such as POCl ₃ or PH ₃ while the P-type silicon substrate 10a is placed in a high temperature diffusion path of about 800 ° C. or more. ) Is diffused to the surface.

On the other hand, since the high temperature diffusion process is performed at a high temperature of 800 ℃ or more, by-products such as PSG (Phosphor-Silicate Glass) may be formed on the surface of the P-type silicon substrate 10a. Since the PSG causes a problem of shielding current from the solar cell, the PSG is removed using an etching solution or the like to increase the efficiency of the solar cell.

Next, as can be seen in Figure 2c, by removing the N-type silicon (20a) formed on the side and the bottom of the P-type silicon substrate (10a), the N-type silicon (20a) only on the upper portion of the P-type silicon substrate (10a) To form. Thus, a PN junction layer composed of the P-type silicon layer 10 and the N-type silicon layer 20 formed on the upper surface thereof is formed.

Next, as can be seen in Figure 2d, the anti-reflection layer 30 is formed on the upper surface of the N-type silicon layer 20.

Next, as shown in FIG. 2E, the front electrode 50 is formed on the top surface of the anti-reflection layer 30, and the back electrode 60 is formed on the bottom surface of the P-type silicon layer 10.

Next, as can be seen in Figure 2f, by performing a heat treatment at a high temperature to complete the substrate-type solar cell as shown in FIG. As such, when the high temperature heat treatment is performed, the metal material constituting the front electrode 50 penetrates the anti-reflection layer 30 and penetrates to the N-type silicon layer 20 so that the front electrode 50 is N. It is electrically connected to the silicon-type silicon layer 20, and the metal material constituting the back electrode 60 is penetrated into the P-type silicon layer 10 to the lower portion of the P-type silicon layer 10 P ⁺ type silicon layer 40 is formed.

However, such a conventional substrate type solar cell has not yet achieved the desired battery efficiency. Particularly, under the mass production system, substrate type solar cells are manufactured by using polycrystalline silicon, which is advantageous in terms of cost. In the case of polycrystalline silicon, many crystal defects exist, and in particular, since crystal grains are arranged in different crystal orientations, many of them also exist at the boundary thereof. There will be a defect.

Therefore, a method for improving the efficiency of the solar cell by minimizing the defect of the substrate-type solar cell is required.

The present invention is devised to meet the above-described conventional requirements, and an object of the present invention is to provide a manufacturing method that can improve the efficiency of the solar cell by removing defects present in the substrate-type solar cell.

In order to achieve the above object, the present invention comprises the steps of preparing a P-type semiconductor substrate; Doping an N-type dopant on the P-type semiconductor substrate to form a PN junction layer comprising a P-type semiconductor layer and an N-type semiconductor layer formed on an upper surface thereof; Forming an antireflection layer on an upper surface of the N-type semiconductor layer; Activating the N-type dopant and performing heat treatment to remove defects present in the PN junction layer; Forming a front electrode connected to the N-type semiconductor layer; And it provides a method of manufacturing a substrate-type solar cell comprising a step of forming a back electrode connected to the P-type semiconductor layer.

The present invention also provides a process for preparing a P-type semiconductor substrate; Doping an N-type dopant on the P-type semiconductor substrate to form a PN junction layer comprising a P-type semiconductor layer and an N-type semiconductor layer formed on an upper surface thereof; Activating the N-type dopant and treating the N-type dopant in a hydrogen atmosphere to remove defects in the PN junction layer; Forming an antireflection layer on an upper surface of the N-type semiconductor layer; Forming a front electrode connected to the N-type semiconductor layer; And it provides a method of manufacturing a substrate-type solar cell comprising a step of forming a back electrode connected to the P-type semiconductor layer.

The treatment in the hydrogen atmosphere may be performed by applying a plasma in a hydrogen atmosphere to perform a plasma treatment.

After the forming of the anti-reflection layer, the method may further include performing a heat treatment to activate the N-type dopant and to remove defects present in the PN junction layer.

The treatment in the hydrogen atmosphere may be performed by a heat treatment in the hydrogen atmosphere.

The doping of the N-type dopant on the P-type semiconductor substrate may be performed by generating a plasma while supplying the N-type dopant gas.

The heat treatment may be performed by supplying hydrogen ions to the PN junction layer to induce Si—H bonding to remove defects present in the PN junction layer.

Hydrogen ions supplied to the PN junction layer may be one in which hydrogen atoms contained in the antireflection layer are activated by the heat treatment process.

The present invention also provides a process for preparing an N-type semiconductor substrate; Doping a P-type dopant on the N-type semiconductor substrate to form a PN junction layer composed of an N-type semiconductor layer and a P-type semiconductor layer formed on an upper surface thereof; Forming an antireflection layer on an upper surface of the P-type semiconductor layer; Activating the P-type dopant and performing heat treatment to remove defects present in the PN junction layer; Forming a front electrode connected to the P-type semiconductor layer; And providing a back electrode connected to the N-type semiconductor layer.

The present invention also provides a process for preparing an N-type semiconductor substrate; Doping a P-type dopant on the N-type semiconductor substrate to form a PN junction layer composed of an N-type semiconductor layer and a P-type semiconductor layer formed on an upper surface thereof; Activating the P-type dopant and treating in a hydrogen atmosphere to remove defects present in the PN junction layer; Forming an antireflection layer on an upper surface of the P-type semiconductor layer; Forming a front electrode connected to the P-type semiconductor layer; And providing a back electrode connected to the N-type semiconductor layer.

The treatment in the hydrogen atmosphere may be performed by applying a plasma in a hydrogen atmosphere to perform a plasma treatment.

After the forming of the anti-reflection layer, the method may further include a step of activating the P-type dopant and performing heat treatment to remove defects present in the PN junction layer.

The treatment in the hydrogen atmosphere may be performed by a heat treatment in the hydrogen atmosphere.

The doping of the P-type dopant on the N-type semiconductor substrate may be performed by generating a plasma while supplying the P-type dopant gas.

The heat treatment may be performed by supplying hydrogen ions to the PN junction layer to induce Si—H bonding to remove defects present in the PN junction layer.

Hydrogen ions supplied to the PN junction layer may be one in which hydrogen atoms contained in the antireflection layer are activated by the heat treatment process.

According to the present invention as described above has the following effects.

First, in one embodiment of the present invention, by supplying hydrogen ions to the PN junction layer through the heat treatment process, by inducing Si-H bonds to remove the defects present in the PN junction layer has the effect of improving the efficiency of the solar cell have.

Second, in one embodiment of the present invention, by performing the heat treatment process after the anti-reflection layer forming process, it is possible to simultaneously implement the activation of the doped N-type or P-type dopant ions and the removal of defects present in the PN junction layer, In particular, the anti-reflection layer acts as a barrier when the N-type or P-type dopant ions are activated, thereby preventing the N-type or P-type dopant ions from being released to the outside, thereby increasing the efficiency of the solar cell.

Third, in another embodiment of the present invention, by supplying activated hydrogen ions by treatment in a hydrogen atmosphere to the PN junction layer, by inducing Si-H bonds to remove defects present in the PN junction layer efficiency of the solar cell It has an enhanced effect.

Fourth, the present invention, by doping the N-type or P-type dopant using the plasma ion doping method, it is possible to realize a more precise and reproducible doping, the process time is shorter than the conventional doping using the high temperature diffusion method No by-products are produced and no additional process is required, such as etching.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3A to 3F are cross-sectional views illustrating a manufacturing process of a substrate-type solar cell according to an embodiment of the present invention.

First, as shown in FIG. 3A, after the P-type semiconductor substrate 100a is manufactured, the upper surface thereof is formed into an uneven structure.

The P-type semiconductor substrate 100a may use single crystal silicon or polycrystalline silicon. Since single crystal silicon has high purity and low crystal defect density, solar cell efficiency is high, but the price is too high, and thus economical efficiency is low. Although relatively inefficient, they are inexpensive and are suitable for mass production due to their low production costs.

The upper surface of the P-type semiconductor substrate 100a is formed by the concave-convex structure through a predetermined etching process. In the case of using a single crystal silicon substrate as the P-type semiconductor substrate 100a, the surface is concave-convex by the alkali etching. Although a polysilicon substrate is used as the P-type semiconductor substrate 100a, since many crystal grains are arranged in different crystal orientations, there is a limit to forming the surface into an uneven structure by alkali etching, which is reactive. It is preferable to carry out using an ion etching method (RIE), an isotropic etching method using an acid solution, or a mechanical etching method.

Since the reactive ion etching method can form a uniform uneven structure on the surface of the substrate irrespective of the crystal orientation of the crystal grains, the reactive ion etching method can be easily applied to the process of forming the uneven structure on the surface of the polysilicon substrate. The application of reactive ion etching has the advantage that subsequent processes can be performed in the same chamber. When the reactive ion etching method is applied, Cl ₂ , SF ₆ , NF ₃ , HBr, or a mixture thereof is used as a main gas, and in some cases, Ar, O ₂ , N ₂ , He, or a mixture thereof is added. It can be used as a gas.

Next, as shown in FIG. 3B, an N-type dopant is doped on the P-type semiconductor substrate 100a. Then, the PN junction layer which consists of the P-type semiconductor layer 100 and the N-type semiconductor layer 200 formed in the upper surface is formed.

The process of doping the N-type dopant is performed by using a plasma ion doping method, specifically, the P-type semiconductor substrate 100a is placed in a plasma generating apparatus with its upper surface facing upwards and POCl ₃ And a plasma generating step while supplying an N-type dopant gas such as PH ₃ . When the plasma is generated in this way, phosphorus (P) ions in the plasma are accelerated by the RF electric field and incident on the P-type semiconductor substrate 100a to be ion-doped.

As described above, the present invention has the following advantages over the process of doping the N-type dopant using the conventional high temperature diffusion method by doping the N-type dopant using the plasma ion doping method.

First, since the plasma ion doping method can precisely control the doping concentration and the doping depth by adjusting the gas flow rate or the RF power, it is possible to realize more precise and reproducible doping and shorter processing time than the high temperature diffusion method.

Second, since plasma ion doping process is performed at a relatively low temperature compared with high temperature diffusion method, by-products (for example, PSG or BSG) generated by high temperature diffusion method are not produced, and thus, additional processes for removing the by-products are not required. There is an advantage to be improved.

Third, since the ion doping proceeds in the vertical direction, the N-type semiconductor layer 200 is formed only on the upper portion of the P-type semiconductor substrate 100a, so that N formed on the sides and the lower portion of the P-type semiconductor substrate 100a as in the high temperature diffusion method. There is an advantage in that productivity is improved because an additional process for removing the type semiconductor layer is not required.

On the other hand, after the plasma ion doping process, since the doped ions may act as simple impurities, the N-type semiconductor layer 200 is heated to an appropriate temperature so as to activate the doped ions and combine with Si. It is preferable to perform a heat treatment process. In one embodiment of the present invention, the heat treatment process is performed immediately after the anti-reflection layer 300 forming process, not just after the plasma ion doping process. The reason will be described later.

Next, as can be seen in Figure 3c, the anti-reflection layer 300 is formed on the upper surface of the N-type semiconductor layer 200.

As the upper surface of the N-type semiconductor layer 200 is formed with a concave-convex structure, the anti-reflection layer 300 is also formed with a concave-convex structure.

The anti-reflection layer 300 is made of a material containing a hydrogen atom, for example, silicon nitride. The silicon nitride may be formed by plasma CVD using NH ₃ , SiH ₄ , and N ₂ gases.

Next, as can be seen in Figure 3d, performing a heat treatment process to remove the defect (Defect) present in the PN junction layer.

By supplying hydrogen ions to the PN junction layer through the heat treatment process, the Si-H bond is induced to remove defects present in the PN junction layer. Therefore, a hydrogen supply source is required during the heat treatment process. In the exemplary embodiment of the present invention, since the antireflection layer 300 contains hydrogen atoms, the hydrogen atoms contained in the antireflection layer 300 are activated by the heat treatment process. Therefore, since hydrogen ions are supplied to the PN junction layer, a separate hydrogen supply source is not required.

In addition, when the heat treatment process is performed, the doped N-type dopant ions are activated in the process according to FIG. 3B, and thus may be combined with Si. Thus, the N-type dopant ions may be obtained through one heat treatment process. Activation and removal of defects present in the PN junction layer can be implemented simultaneously. In particular, when the heat treatment process is generally performed to activate the N-type dopant ions, the N-type dopant is discharged to the outside (outgassing or outdiffusing) in addition to the N-type dopant being bonded to the internal Si, thereby causing a loss. However, in the present invention, since the anti-reflection layer 300 formed on the upper part serves as a barrier, an N-type dopant may be emitted to the outside and thus not lost.

As a result, the present invention performs the heat treatment process after forming the anti-reflection layer 300 on the upper surface of the N-type semiconductor layer 200, first, the defects present in the PN junction layer is removed, second, the N-type semiconductor The doped N-type dopant ions are activated to form the layer 200, and third, the N-type dopant ions are not emitted to the outside, thereby increasing the efficiency of the solar cell.

The heat treatment is preferably performed at a temperature of 800 ° C. or higher for the purpose of removing defects present in the PN junction layer and activating an N-type dopant ion.

3E, the front electrode material 500a is coated on the top surface of the anti-reflection layer 300 in a predetermined pattern, and the back electrode material 600a is applied to the bottom surface of the P-type semiconductor layer 100. It is applied in a predetermined pattern.

The front electrode material 500a may be applied first, and then the back electrode material 600a may be applied, and the back electrode material 600a may be applied first, and then the front electrode material 500a may be applied. have.

The front electrode material 500a includes Ag, Al, Ag + Al, Ag + Mg, Ag + Mn, Ag + Sb, Ag + Zn, Ag + Mo, Ag + Ni, Ag + Cu, Ag + Al + Zn and It may be made of the same metal material.

The back electrode material 600a may include a material capable of functioning as a P-type dopant, such as Al, and examples thereof include Al, Al + Ag, Al + Mo, Al + Ni, Al + Cu, and Al +. Metal materials such as Mg, Al + Mn, Al + Zn, and the like.

The front electrode material 500a and the back electrode material 600a may be formed by screen printing, inkjet printing, gravure printing, microcontact printing, or the like. Can be applied.

Next, as can be seen in Figure 3f, the heat treatment process is performed to form a front electrode 500, a P ⁺ type semiconductor layer 400, and a back electrode 600.

That is, when the heat treatment is performed at a temperature of 850 ° C. or higher, the front electrode material 500a penetrates through the anti-reflection layer 300 and penetrates to the N-type semiconductor layer 200 and is connected to the N-type semiconductor layer 200. The front electrode 500 is formed. In addition, when the heat treatment is performed at a temperature of 850 ° C. or higher, the back electrode material 600a penetrates into the lower surface of the P-type semiconductor layer 100 to form a P ⁺ type semiconductor layer 400. Therefore, the back electrode 600 is finally connected to the P-type semiconductor layer 100 through the P ⁺ -type semiconductor layer 400.

On the other hand, in the case of using a material that cannot function as a P-type dopant as the back electrode material 600a, a plasma containing a P-type dopant such as B ₂ H ₆ is used below the P-type semiconductor layer 100. The ion doped to form a P ⁺ type semiconductor layer 400, after which the back electrode 600 is formed on the lower surface of the P ⁺ type semiconductor layer 400. As described above, when the P ⁺ type semiconductor layer 400 is formed first and then the back electrode 600 is formed, the front electrode 500 is not formed simultaneously with the back electrode 600, but before the back electrode 600 is formed. Alternatively, it may be formed after the back electrode 600 is formed.

4A to 4G are cross-sectional views illustrating a manufacturing process of a substrate-type solar cell according to another embodiment of the present invention, which is different from the above-described embodiment to supply hydrogen ions from the outside to remove defects in the PN junction layer. It includes the process to do.

In the following description, the same reference numerals are given to the same components as the above-described embodiments, and detailed descriptions of the same components will be omitted.

First, as shown in FIG. 4A, after the P-type semiconductor substrate 100a is manufactured, the upper surface thereof is formed into an uneven structure.

Next, as shown in FIG. 4B, an N-type dopant is doped on the P-type semiconductor substrate 100a. Then, the PN junction layer which consists of the P-type semiconductor layer 100 and the N-type semiconductor layer 200 formed in the upper surface is formed.

The step of doping the N-type dopant is performed using a plasma ion doping method.

Next, as can be seen in Figure 4c, by treating in a hydrogen atmosphere to supply the activated hydrogen ions to the PN junction layer to induce Si-H bonds to eliminate the defects present in the PN junction layer.

The process of treating in a hydrogen atmosphere may be performed by applying a plasma in a hydrogen atmosphere to perform a plasma treatment, or may be a process of performing heat treatment by applying a high temperature in a hydrogen atmosphere.

Since the plasma treatment process in the hydrogen atmosphere is generally performed at a temperature lower than 800 ° C., the activation effect of the N-type dopant ions and the removal of defects present in the PN junction layer cannot be faithfully realized. In particular, the defects present in the PN junction layer may be present on the surface of the PN junction layer and the inside of the PN junction layer, respectively. When the plasma treatment is performed at a temperature lower than 800 ° C., the defects on the surface of the PN junction layer may be any. Although removed to some extent, defects inside the PN junction layer remain without being removed. Therefore, in order to faithfully realize the effect of removing the internal defects of the PN junction layer and the activation effect of the N-type dopant ions, it is preferable to further perform a heat treatment at a temperature of 800 ° C. or higher after the plasma treatment in the hydrogen atmosphere. The heat treatment process is preferably performed after the anti-reflection layer 300 forming process to be described later.

The heat treatment process of applying a high temperature in the hydrogen atmosphere is carried out at a reaction temperature of 800 ℃ or more, in this case, it is possible to faithfully implement the effect of activating the N-type dopant ions and the removal of defects present in the PN junction layer. Therefore, it is not necessary to perform an additional heat treatment process after the heat treatment step of applying a high temperature in the hydrogen atmosphere.

Next, as can be seen in Figure 4d, the anti-reflection layer 300 is formed on the upper surface of the N-type semiconductor layer 200.

Next, as can be seen in Figure 4e, by performing a heat treatment process to remove the defects (Defect) present in the PN junction layer and to activate the N-type dopant ions.

As described in the above-described process of FIG. 4C, when the process of FIG. 4C is a plasma treatment process in a hydrogen atmosphere, in order to faithfully realize the effect of removing the internal defects of the PN junction layer and the activation effect of the N-type dopant ions, A heat treatment process is performed. However, when the process of FIG. 4C is a heat treatment process in a hydrogen atmosphere, the heat treatment process of FIG. 4E may be omitted.

Next, as shown in FIG. 4F, the front electrode material 500a is coated on the top surface of the anti-reflection layer 300 in a predetermined pattern, and the back electrode material 600a is applied to the bottom surface of the P-type semiconductor layer 100. It is applied in a predetermined pattern.

Next, as can be seen in Figure 4g, the heat treatment process is performed to form the front electrode 500, P ⁺ type semiconductor layer 400, and the back electrode 600.

On the other hand, the method of manufacturing a substrate-type solar cell including the step of forming a PN junction layer by doping an N-type dopant on the P-type semiconductor substrate with a P-type semiconductor substrate as a base has been described. The present invention also includes a method of manufacturing a substrate-type solar cell including a step of forming a PN junction layer by doping a P-type dopant on an N-type semiconductor substrate based on the N-type semiconductor substrate.

Hereinafter, a method of manufacturing a substrate-type solar cell including a step of forming a PN junction layer by doping a P-type dopant on an N-type semiconductor substrate based on the N-type semiconductor substrate will be described. Specific details of each process will be understood with reference to the above-described embodiments.

First, after manufacturing an N type semiconductor substrate, the upper surface is formed in an uneven structure.

Next, a PN dopant is doped on the N-type semiconductor substrate to form a PN junction layer including an N-type semiconductor layer and a P-type semiconductor layer formed on an upper surface thereof. The step of doping the P-type dopant includes a step of plasma ion doping using a P-type dopant-containing gas such as B ₂ H ₆ .

Next, an antireflection layer is formed on the upper surface of the P-type semiconductor layer.

Next, a heat treatment process is performed to remove defects existing in the PN junction layer.

Next, the front electrode material is coated on the upper surface of the anti-reflection layer in a predetermined pattern and then heat treated to allow the front electrode material to penetrate the anti-reflection layer and penetrate to the P-type semiconductor layer so as to be connected to the P-type semiconductor layer. Form an electrode.

Next, an N ⁺ type semiconductor layer is formed by doping an N type dopant under the N type semiconductor layer, and then a back electrode is formed on a bottom surface of the N ⁺ type semiconductor layer in a predetermined pattern.

As described above, the front electrode may be formed first, and then the N ⁺ type semiconductor layer and the back electrode may be formed, but the N ⁺ type semiconductor layer and the back electrode may be formed first, and then the front electrode may be formed.

Meanwhile, before the anti-reflection layer forming process, a plasma or a heat treatment process may be performed in a hydrogen atmosphere to remove defects in the PN junction layer.

1 is a schematic cross-sectional view of a conventional substrate-type solar cell.

2A through 2F are cross-sectional views illustrating a manufacturing process of a conventional substrate type solar cell as shown in FIG. 1.

3A to 3F are cross-sectional views illustrating a manufacturing process of a substrate-type solar cell according to an embodiment of the present invention.

4A to 4G are cross-sectional views illustrating a process of manufacturing a substrate-type solar cell according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: P-type semiconductor layer 200: N-type semiconductor layer

300: antireflection layer 400: P ⁺ type semiconductor layer

500: front electrode 600: rear electrode

Claims (16)

Preparing a P-type semiconductor substrate; Doping an N-type dopant on the P-type semiconductor substrate to form a PN junction layer comprising a P-type semiconductor layer and an N-type semiconductor layer formed on an upper surface thereof; Forming an antireflection layer on an upper surface of the N-type semiconductor layer; Activating the N-type dopant and performing heat treatment to remove defects present in the PN junction layer; Forming a front electrode connected to the N-type semiconductor layer; And Method of manufacturing a substrate-type solar cell comprising the step of forming a back electrode connected to the P-type semiconductor layer. Preparing a P-type semiconductor substrate; Doping an N-type dopant on the P-type semiconductor substrate to form a PN junction layer comprising a P-type semiconductor layer and an N-type semiconductor layer formed on an upper surface thereof; Activating the N-type dopant and treating the N-type dopant in a hydrogen atmosphere to remove defects in the PN junction layer; Forming an antireflection layer on an upper surface of the N-type semiconductor layer; Forming a front electrode connected to the N-type semiconductor layer; And Method for manufacturing a substrate-type solar cell comprising the step of forming a back electrode connected to the P-type semiconductor layer. The method of claim 2, The process of the hydrogen atmosphere is a method of manufacturing a substrate-type solar cell, characterized in that consisting of a step of performing a plasma treatment by applying a plasma in a hydrogen atmosphere. The method of claim 3, After the step of forming the anti-reflection layer, and further comprising a step of activating the N-type dopant and performing a heat treatment to remove the defects present in the PN junction layer. Manufacturing method. The method of claim 2, The process of treating in a hydrogen atmosphere is a method of manufacturing a substrate-type solar cell, characterized in that consisting of a step of performing a heat treatment in a hydrogen atmosphere. The method according to any one of claims 1 to 5, The method of doping the N-type dopant on the upper portion of the P-type semiconductor substrate, the manufacturing method of the substrate-type solar cell, characterized in that the step of generating a plasma while supplying the N-type dopant gas. The method according to claim 1 or 4, The step of performing the heat treatment, supplying hydrogen ions to the PN junction layer to induce a Si-H bond to remove the defects present in the PN junction layer manufacturing of a substrate-type solar cell, characterized in that Way. The method of claim 7, wherein Hydrogen ions supplied to the PN junction layer is a method of manufacturing a substrate-type solar cell, characterized in that the hydrogen atoms contained in the anti-reflection layer is activated by the heat treatment process. Preparing an N-type semiconductor substrate; Doping a P-type dopant on the N-type semiconductor substrate to form a PN junction layer composed of an N-type semiconductor layer and a P-type semiconductor layer formed on an upper surface thereof; Forming an antireflection layer on an upper surface of the P-type semiconductor layer; Activating the P-type dopant and performing heat treatment to remove defects present in the PN junction layer; Forming a front electrode connected to the P-type semiconductor layer; And A method of manufacturing a substrate type solar cell comprising the step of forming a back electrode connected to the N-type semiconductor layer. Preparing an N-type semiconductor substrate; Doping a P-type dopant on the N-type semiconductor substrate to form a PN junction layer composed of an N-type semiconductor layer and a P-type semiconductor layer formed on an upper surface thereof; Activating the P-type dopant and treating in a hydrogen atmosphere to remove defects present in the PN junction layer; Forming an antireflection layer on an upper surface of the P-type semiconductor layer; Forming a front electrode connected to the P-type semiconductor layer; And A method of manufacturing a substrate type solar cell comprising the step of forming a back electrode connected to the N-type semiconductor layer. The method of claim 10, The process of the hydrogen atmosphere is a method of manufacturing a substrate-type solar cell, characterized in that consisting of a step of performing a plasma treatment by applying a plasma in a hydrogen atmosphere. The method of claim 11, After the step of forming the anti-reflection layer, further comprising the step of activating the P-type dopant and performing a heat treatment to remove the defects present in the PN junction layer. Manufacturing method. The method of claim 10, The process of treating in a hydrogen atmosphere is a method of manufacturing a substrate-type solar cell, characterized in that consisting of a step of performing a heat treatment in a hydrogen atmosphere. The method according to any one of claims 9 to 13, The step of doping the P-type dopant on the N-type semiconductor substrate, the manufacturing method of the substrate-type solar cell, characterized in that the step of generating a plasma while supplying a P-type dopant gas. The method of claim 9 or 12, The step of performing the heat treatment, supplying hydrogen ions to the PN junction layer to induce a Si-H bond to remove the defects present in the PN junction layer manufacturing of a substrate-type solar cell, characterized in that Way. The method of claim 15, Hydrogen ions supplied to the PN junction layer is a method of manufacturing a substrate-type solar cell, characterized in that the hydrogen atoms contained in the anti-reflection layer is activated by the heat treatment process.

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