KR20090053615A - Liquid crystal display device and method for fabricating the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same, the configuration of which is formed on a first substrate and partitions a cell region to block light, and a transparent formed on a rear surface of the first substrate corresponding to the black matrix. An overcoat layer formed on the overcoat layer to planarize an electrode, a color filter formed in a cell region of a first substrate partitioned by the black matrix, a substrate formed on the first substrate, and having a step formed by the color filter; A color filter substrate comprising an alignment film for orienting liquid crystal molecules in a predetermined direction; A thin film transistor substrate formed on a second substrate and configured to supply a pixel signal, a thin film transistor substrate electrically connected to the thin film transistor and supplied with a pixel signal, and a common electrode forming an electric field with the pixel electrode; And a liquid crystal layer formed between the thin film transistor substrate and the color filter substrate.

Transparent electrode, overcoat layer, alignment film, back exposure, color filter substrate

Description

Liquid crystal display device and method for manufacturing the same {Liquid Crystal Display Device and Method for fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same, and more particularly, to form a transparent electrode on a substrate back surface to increase cell transmittance of light and to reduce reflectance on a cell surface caused by an external light source, and It relates to a manufacturing method.

Liquid crystal display (LCD) is a device that displays an image by controlling the light transmittance of the liquid crystal using an electric field, and is implemented as an active matrix type in which switching elements are formed for each cell, so that a computer monitor, office work, etc. It is applied to display apparatuses, such as a device and a cellular phone.

Such liquid crystal display devices are classified into a vertical electric field using a vertical electric field and a horizontal electric field using a horizontal electric field according to the electric field direction for driving the liquid crystal.

In this case, in the vertical field type liquid crystal display device, the common electrode formed on the upper substrate and the pixel electrode formed on the lower substrate face each other to drive the liquid crystal of TN (Twisted Nemastic) mode by the vertical electric field formed therebetween. do.

The vertical field type liquid crystal display device has an advantage of large aperture ratio while having a narrow viewing angle of 90 degrees.

In the horizontal field type liquid crystal display device, an in-plane switch (hereinafter referred to as IPS) mode liquid crystal is driven by a horizontal electric field between a pixel electrode and a common electrode arranged side by side on a lower substrate. The horizontal field application type liquid crystal display device has an advantage of having a wide viewing angle of about 160 degrees while having a small aperture ratio.

A conventional horizontal field type liquid crystal display device and a manufacturing method having such characteristics will be described with reference to FIGS. 1A to 1G as follows.

1A to 1G are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the related art.

As shown in FIG. 1G, the liquid crystal display device 10 according to the related art includes a thin film transistor (not shown), a common electrode 14, a pixel electrode 27, and a lower alignment layer formed on the lower glass substrate 11. A thin film transistor substrate composed of 29; It is composed of a black matrix 45a, a color filter 49, an overcoat layer 51 and an upper alignment layer 53 which are sequentially formed on the upper glass substrate 41 on which the transparent electrode 43 is formed to prevent static electricity. A color filter substrate; And a liquid crystal layer 61 formed between the thin film transistor substrate and the color filter substrate.

A method of manufacturing a liquid crystal display device according to the related art having the above configuration will be described below with reference to FIGS. 1A to 1G.

1A to 1G are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the related art.

As shown in FIG. 1A, first, a transparent conductive film 43 is formed on the upper glass substrate 41 through sputtering.

Next, as shown in FIG. 1B, an opaque film 45 is formed on the upper glass substrate 41 to form a black matrix that prevents light leakage, and then a photosensitive film 47 is formed on the opaque film 45. Apply.

Subsequently, as illustrated in FIG. 1C, the photoresist layer 47 is selectively removed through the photolithography process and the etching process to form the photoresist pattern 47a.

Next, as shown in FIG. 1D, the opaque film 45 is selectively removed using the photosensitive film pattern 47a as a blocking film to form a black matrix 45a.

Subsequently, as shown in FIG. 1E, after the photoresist pattern 47a is removed, the photosensitive color resin is entirely deposited on the upper glass substrate 41 including the black matrix 45a, and then a photolithography process and an etching process are performed. Patterning is performed to form red, green, and blue color filters 49.

Next, as shown in FIG. 1F, an overcoat layer 51 is formed on the color filter 49 to planarize the upper glass substrate 41 using an organic insulator.

 Subsequently, an upper alignment layer 53 is formed on the overcoat layer 51 to orient the liquid crystal in a predetermined direction, thereby completing the final color filter substrate.

On the other hand, as shown in Figure 1g, by depositing a metal material on the lower glass substrate 11 made of transparent glass, etc. by a sputtering method and selectively patterning it by a mask process, the gate line (not shown) and the The gate electrode 13 and the common electrode 14 protruding from the gate line (not shown) are formed.

Next, a gate insulating film 15 made of an inorganic insulating material such as silicon nitride (SiNx) is formed on the lower glass substrate 11 including the gate line (not shown), the gate electrode 103, and the common electrode 14. .

Subsequently, a semiconductor layer (not shown) made of a hydrogenated amorphous silicon layer or the like is formed on the gate insulating film 15.

Next, an ohmic contact layer (not shown) made of a material such as n + hydrogenated amorphous silicon in which silicide or n-type impurities are heavily doped is formed on the semiconductor layer (not shown).

Subsequently, the ohmic contact layer and the semiconductor layer are selectively patterned by a photolithography process and an etching process to form a semiconductor pattern 17 and an ohmic contact pattern 19.

Next, a metal material for forming a data line is deposited on the lower glass substrate 11 including the semiconductor pattern 17 and the ohmic contact pattern 19 by a sputtering method, and then selectively patterned by a photolithography process and an etching process. As a result, a data line (not shown), a source electrode 21 protruding from the data line (not shown), and a drain electrode 23 spaced apart from the source electrode 21 by a predetermined interval are formed, respectively.

Although not shown in the drawing, the data line (not shown) is formed to cross the gate line (not shown), and the source electrode 21 and the drain electrode 23 are formed under the gate electrode ( 13) together with a thin film transistor (not shown) which is a switching element.

In addition, a channel of the thin film transistor (not shown) is formed in the semiconductor pattern 17 between the source electrode 21 and the drain electrode 23.

Subsequently, a passivation layer 25 made of an insulating material having excellent planarization characteristics is formed on the entire surface of the lower glass substrate 101 including the data line (not shown) and the source / drain electrodes 21 and 23.

Subsequently, the passivation layer 25 is selectively patterned by a photolithography process and an etching process to form a contact hole (not shown) exposing a part of the drain electrode 23 in the passivation layer 25.

Next, a metal material layer (not shown) made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the passivation layer 25 including the contact hole (not shown) by sputtering. This is then selectively removed by a photolithography process and an etching process to form the pixel electrode 27.

Subsequently, a thin film transistor substrate is completed by forming a lower alignment layer 29 to arrange liquid crystal molecules in a predetermined direction on the passivation layer 25 including the pixel electrode 27.

After the liquid crystal layer 61 is formed between the thin film transistor substrate and the color filter substrate thus manufactured, the substrates are bonded to each other to complete the liquid crystal display device manufacturing process.

As described above, the liquid crystal display and the manufacturing method according to the prior art have the following problems.

In the liquid crystal display device and a method of manufacturing the same according to the prior art, the transparent electrode (ITO) is formed on the rear surface of the upper glass substrate to prevent static electricity generated in the liquid crystal display device and to be used as a heater. The transmittance of is decreased, and the reflectance by the external light source of the cell itself is higher than that without the transparent electrode (ITO).

Accordingly, the present invention has been made to solve the above problems of the prior art, the present invention provides a liquid crystal display device that can increase the cell transmittance of light as well as antistatic or heater function, and lower the reflectance on the cell surface by an external light source And to provide a method for producing the object.

According to an aspect of the present invention, there is provided a liquid crystal display device comprising: a black matrix formed on a first substrate and blocking light by dividing a cell region; A color filter formed in the cell region of the substrate partitioned by the black matrix; An alignment film formed on the color filter and aligning liquid crystal molecules; And a transparent electrode formed on a rear surface of the substrate corresponding to the black matrix.

According to an aspect of the present invention, there is provided a liquid crystal display device comprising: a black matrix formed on a first substrate and partitioning a cell region to block light; a transparent electrode formed on a rear surface of the first substrate corresponding to the black matrix; A color filter formed in the cell region of the first substrate partitioned by the black matrix, an overcoat layer planarizing the substrate formed on the first substrate and having a step formed by the color filter, and a liquid crystal molecule formed on the overcoat layer. A color filter substrate composed of an alignment film for orienting the crystal in a predetermined direction; A thin film transistor substrate formed on a second substrate and configured to supply a pixel signal, a thin film transistor substrate electrically connected to the thin film transistor and supplied with a pixel signal, and a common electrode forming an electric field with the pixel electrode; And a liquid crystal layer formed between the thin film transistor substrate and the color filter substrate.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method comprising: forming a black matrix that blocks light by dividing a cell region on a substrate; Forming a transparent electrode on a rear surface of the substrate corresponding to the black matrix; Forming a color filter in a cell region of the substrate partitioned by the black matrix; Forming an overcoat layer to planarize the substrate on which the step is formed by the color filter; And forming an alignment layer formed on the overcoat layer and aligning the liquid crystal molecules in a predetermined direction.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method comprising: forming a black matrix that blocks light by dividing a cell region on a first substrate; Forming a transparent electrode on a rear surface of the first substrate corresponding to the black matrix; Forming a color filter in a cell region of the first substrate partitioned by the black matrix; Forming an overcoat layer to planarize a first substrate having a step formed by the color filter; Forming an alignment layer formed on the overcoat layer to align liquid crystal molecules in a predetermined direction; Forming a thin film transistor supplying a pixel signal on a second substrate; Forming a pixel electrode on the second substrate, the pixel electrode electrically connected to the thin film transistor and to which a pixel signal is supplied; Forming a common electrode on the second substrate to form an electric field with the pixel electrode; And forming a liquid crystal layer between the first substrate and the second substrate.

According to the liquid crystal display device and the manufacturing method according to the present invention has the following effects.

In the liquid crystal display device and a method of manufacturing the same according to the present invention, the transparent electrode is formed on the rear surface of the upper glass substrate corresponding to the black matrix by using the back exposure method, thereby increasing the cell transmittance of light with antistatic or heater function. The reflectance at the cell surface caused by the external light source can be lowered.

In addition, the liquid crystal display device and the method of manufacturing the same according to the present invention can form a transparent electrode on the back surface of the upper glass substrate corresponding to the black matrix by using the back exposure method without a separate mask, The manufacturing cost can be reduced.

Hereinafter, the liquid crystal display device according to the present invention will be described in detail with reference to FIG. 3.

3 is a cross-sectional view schematically showing a liquid crystal display device according to the present invention.

As shown in FIG. 3, the liquid crystal display device 100 according to the present invention includes a thin film transistor (not shown), a common electrode 104, a pixel electrode 117, and a lower alignment layer formed on the lower glass substrate 101. A thin film transistor substrate composed of 119; A color filter substrate comprising a black matrix 145a, a color filter 157, an overcoat layer 159, and an upper alignment layer 161 sequentially formed on the upper glass substrate 141 having the transparent electrode 143a formed on the rear surface thereof; The liquid crystal layer 171 is formed between the thin film transistor substrate and the color filter substrate.

The thin film transistor constituting the thin film transistor substrate includes a gate electrode 103 formed on the lower glass substrate 101 together with a gate line (not shown), and a gate electrode 103 interposed between the gate electrode 103 and the gate insulating film 105. ) And a source electrode 111 and a drain electrode 113 formed together with a data line (not shown) with the semiconductor layer 107 interposed therebetween.

In this case, the thin film transistor includes a pixel electrode 117 connected to the drain electrode 113 through a contact hole (not shown) passing through the passivation layer 115 to the pixel signal transmitted from the data line in response to the scan signal of the gate line. To pass on.

In addition, the common electrode 104 is formed on the lower glass substrate 101 together with the gate line, and has a stripe shape that alternates with the pixel electrode 117, and when driving the liquid crystal through a common line (not shown). The reference voltage which is a reference is supplied.

In this case, a horizontal electric field is formed between the pixel electrode 117 supplied with the pixel signal through the thin film transistor and the common electrode 104 supplied with the reference voltage through the common line, and the horizontal electric field is a thin film transistor substrate and a color filter. The liquid crystal molecules arranged in the horizontal direction between the substrates are rotated in a predetermined direction to change the light transmittance, thereby realizing an image.

The lower alignment layer 119 is formed on the passivation layer 115 covering the thin film transistor, and serves to orient the liquid crystal interposed between the thin film transistor substrate and the color filter substrate in a predetermined direction.

On the other hand, the black matrix 145a constituting the color filter substrate is formed to overlap the region where the thin film transistor of the lower glass substrate 101 is formed, the gate line and the data line not shown in the figure, and the color filter 157 is formed. Define the cell area to be formed. At this time, the black matrix 145a serves to prevent light leakage and to increase external contrast by absorbing external light.

In addition, the color filter 157 is formed over the cell region separated by the black matrix 145a and the black matrix 157. In this case, the color filter 157 is formed for each of R, G, and B to implement R, G, and B colors.

The overcoat layer 159 is formed to cover the step formed by the color filter 157 to planarize the upper glass substrate 141.

Although not shown in the drawing, the spacer (not shown) serves to maintain a cell gap between the upper glass substrate 141 and the lower glass substrate 101, and is simultaneously formed of the same material as the overcoat layer 159 or Or through a subsequent process.

In addition, the upper alignment layer 161 is formed on the overcoat layer 159 having the spacer, and serves to orient the liquid crystal interposed between the thin film transistor substrate and the color filter substrate in a predetermined direction.

The transparent electrode 143a is formed on the upper glass substrate 141 corresponding to the black matrix 145a. In this case, the transparent electrode 143a serves to increase the cell transmittance of light and to reduce the reflectance on the cell surface caused by an external light source together with an antistatic or heater function.

A method of manufacturing a liquid crystal display device according to the present invention having the above configuration will be described in detail with reference to FIGS. 3A to 3K.

3A to 3K are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

As shown in FIG. 3A, first, the transparent conductive film 143 is formed on the upper glass substrate 141 by sputtering. In this case, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or a crystallized amorphous silicon layer is used as a material of the transparent conductive film 143. In addition, the transparent conductive film 143 applies high RF (DC) power in a state in which the upper glass substrate 141 and the target are mounted on a substrate installed in a chamber filled with argon (Ar) gas. At this time, Ar (He), which has high energy in the plasma formed by the RF (DC) power, loses a negative charge and collides with the target surface in an Ar + state, and the target particles to be deposited are popped out. It is deposited on the substrate 141.

3B, an opaque film 145 is formed on the upper glass substrate 141 to form a black matrix that prevents light leakage. In this case, an opaque metal or an opaque resin containing chromium (Cr) is used as the material of the opaque film 145.

Subsequently, as shown in FIG. 3C, the first photosensitive film 147 is coated on the opaque film 145, and then the exposure 153 and the developing process using the mask 151 are performed, followed by etching. The first photoresist layer 147 is selectively removed to form a first photoresist layer pattern 147a.

Next, as illustrated in FIG. 3D, the opaque layer 145 is selectively removed using the first photoresist layer pattern 147a as a blocking layer to form a black matrix 145a.

Subsequently, as shown in FIG. 3E, after removing the first photoresist layer pattern 147a, a second photoresist layer 148 is coated on the transparent conductive layer 143 formed on the rear surface of the upper glass substrate 141.

Next, as shown in FIG. 3F, an exposure and development process using the photolithography process technology is performed using the black matrix 145a as a mask, followed by an etching process to selectively pattern the second photoresist layer 148. The second photosensitive film pattern 148a is formed.

Subsequently, as illustrated in FIG. 3G, the transparent conductive layer 143 is selectively removed to form the transparent electrode 143a using the second photoresist layer pattern 148a as a blocking layer.

Next, as shown in FIG. 3H, after the second photoresist layer pattern 148a is removed, photosensitive color resin is entirely deposited on the upper glass substrate 141 including the black matrix 145a, and then photolithography and etching are performed. Patterning through the process is performed to form red, green, and blue color filters 157. In this case, each of the red, green, and blue color filters 157 uses a photolithography process and an etching process.

The process of forming each of the red, green, and blue color filters 157 using the photolithography process and the etching process will be described below.

First, a red photosensitive color resin of red (R) is deposited on the upper glass substrate 141 on which the black matrix 145a is formed, and then a photolithography process for the photosensitive color resin of the red (R) using a mask and The red color filter is formed by performing patterning through an etching process.

Then, after depositing the green (G) photosensitive color resin on the upper glass substrate 141, the red color filter is formed, photolithography process and etching process for the green (G) photosensitive color resin using a mask The green (G) color filter is formed by performing the patterning through this.

Subsequently, a blue (B) photosensitive color resin is entirely deposited on the upper glass substrate 141 on which the red color filter and the green color filter are formed, and then a photolithography process for the blue (B) photosensitive color resin using a mask. And forming a blue (B) color filter by performing patterning through an etching process to finally complete the color filter 157.

Next, as shown in FIG. 3I, an overcoat layer 159 is formed on the color filter 157 to planarize the upper glass substrate 141 using an organic insulator.

 Subsequently, although not shown in the drawing, a spacer (not shown) is formed on the overcoat layer 159 to maintain a cell gap between the thin film transistor and the color filter substrate. In this case, the spacer (not shown) forming process will be described. First, an entire surface of the same organic insulator as the overcoat layer 159 is coated on the overcoat layer 159 and then a photolithography process for the organic insulator using a mask. And a spacer (not shown) for maintaining a cell gap by performing patterning through an etching process.

Next, as shown in FIG. 3J, an upper alignment layer 161 is formed on the overcoat layer 159 including the spacer (not shown) to align the liquid crystal in a predetermined direction, thereby completing the final color filter substrate. .

On the other hand, as shown in Figure 3k, by depositing a metal material on the lower glass substrate 101 made of transparent glass or the like by a sputtering method and selectively patterning it by a mask process, the gate line (not shown) and the The gate electrode 103 and the common electrode 104 extending from the gate line (not shown) are formed.

In this case, the metal material for forming the gate line may be selected from Al-based metals such as Al and Al alloys, Ag-based metals such as Ag and Ag alloys, and Mo-based metals such as Mo and Mo alloys, Cr, Ti, and Ta. do.

In addition, they may include two membranes of different material properties, that is, the lower layer and the upper layer thereon. Here, the upper layer is made of a low resistivity metal, for example, an Al-based metal or an Ag-based metal so as to reduce signal delay or voltage drop of the gate line.

On the other hand, the lower layer may be made of other materials, particularly materials having excellent physical, chemical and electrical contact properties with indium tin oxide (ITO) or indium zinc oxide (IZO), such as Ti, Ta, Cr, and Mo-based metals. Or an example of the combination of the lower layer and the upper layer is a Cr / Al-Nd alloy.

In addition, the common electrode 104 is formed on the lower glass substrate 101 together with a gate line (not shown), and has a stripe shape that alternates with the pixel electrode 117 to be formed in a subsequent process.

Next, a gate insulating film 105 made of an inorganic insulating material such as silicon nitride (SiNx) is formed on the lower glass substrate 101 including the gate line (not shown), the gate electrode 103, and the common electrode 104. .

Subsequently, a semiconductor layer (not shown) made of a hydrogenated amorphous silicon layer or the like is formed on the gate insulating layer 105.

Next, an ohmic contact layer (not shown) made of a material such as n + hydrogenated amorphous silicon in which silicide or n-type impurities are heavily doped is formed on the semiconductor layer (not shown).

Subsequently, the ohmic contact layer and the semiconductor layer are selectively patterned by a photolithography process and an etching process to form a semiconductor pattern 107 and an ohmic contact pattern 109.

Next, a metal material for forming a data line is deposited on the lower glass substrate 101 including the semiconductor pattern 107 and the ohmic contact pattern 109 by a sputtering method, and then selectively patterned by a photolithography process and an etching process. As a result, a data line (not shown), a source electrode 111 protruding from the data line (not shown), and a drain electrode 113 spaced apart from the source electrode 111 by a predetermined interval are formed, respectively.

In this case, although not shown, the data line (not shown) is formed to cross the gate line (not shown), and the source electrode 111 and the drain electrode 113 are formed under the gate electrode ( Together with 103, a thin film transistor (not shown) which is a switching element is configured.

In addition, a channel of the thin film transistor (not shown) is formed in the semiconductor pattern 107 between the source electrode 111 and the drain electrode 113.

As the metal material for forming the data line (not shown), an Al-based metal, an Ag-based metal, a Mo-based metal, Cr, Ti, Ta, or the like may be used, and may be formed in multiple layers.

Next, an organic material having excellent planarization characteristics and a photosensitive property, or an insulating material having a low dielectric constant, on the entire surface of the lower glass substrate 101 including the data line (not shown) and the source / drain electrodes 111 and 113. A protective film 115 made of silicon nitride, which is an inorganic material, is formed.

Subsequently, the protective film 115 is selectively patterned by a mask process using a photolithography process technology to form a contact hole (not shown) exposing a part of the drain electrode 113 in the protective film 115.

Next, a metal layer (not shown) made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the passivation layer 115 including the contact hole (not shown) by a sputtering method. This is then selectively removed by an exposure process and an etching process using a photolithography process technology to form the pixel electrode 117.

In this case, when the data voltage is applied, the pixel electrode 117 generates an electric field together with the common electrode 104 applied with the common voltage, thereby forming a liquid crystal layer between the pixel electrode 117 and the common electrode 104. The liquid crystal molecules of 171 are arranged in a predetermined direction.

 Subsequently, the thin film transistor substrate is completed by forming a lower alignment layer 119 on the protective layer 115 including the pixel electrode 117 so that the liquid crystal molecules are arranged in a predetermined direction.

After the liquid crystal layer 171 is formed between the thin film transistor substrate and the color filter substrate thus manufactured, the substrates are bonded to each other to complete the manufacturing process of the liquid crystal display device.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

Accordingly, the scope of the present invention is not limited thereto, but various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims are also within the scope of the present invention.

1A to 1G are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the related art.

2 is a schematic cross-sectional view of a liquid crystal display device according to the present invention.

3A to 3K are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

*** Explanation of symbols for the main parts of the drawing ***

100: liquid crystal display device 101: lower glass substrate

103: gate electrode 104: common electrode

105: gate insulating film 107: semiconductor pattern

109: ohmic contact pattern 111: source electrode

113: drain electrode 115: protective film

117: pixel electrode 119: lower alignment layer

141: upper glass substrate 143a: transparent electrode

145a; Black matrix 147a: first photoresist pattern

148a: second photosensitive film pattern 151: mask

153: front exposure 155; Back exposure

157: color filter 159: overcoat layer

161: upper alignment layer 171: liquid crystal layer

Claims (14)

A black matrix formed on the first substrate and partitioning the cell region to block light; A color filter formed in the cell region of the substrate partitioned by the black matrix; An alignment film formed on the color filter and aligning liquid crystal molecules; And And a transparent electrode formed on a rear surface of the substrate corresponding to the black matrix. The method of claim 1, The transparent electrode material is any one of a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) or a crystallized amorphous silicon layer. The method of claim 1, Further comprising an overcoat layer formed between the color filter substrate and the alignment layer A liquid crystal display device characterized by the above-mentioned. A black matrix formed on a first substrate and partitioning a cell region to block light; a transparent electrode formed on a rear surface of a first substrate corresponding to the black matrix; and a cell region of a first substrate partitioned by the black matrix. A color filter substrate comprising a formed color filter, an overcoat layer formed on the first substrate and having a step formed by the color filter, and an alignment film formed on the overcoat layer and oriented liquid crystal molecules in a predetermined direction; A thin film transistor substrate formed on a second substrate and configured to supply a pixel signal, a pixel electrode electrically connected to the thin film transistor, and supplied with a pixel signal, and a common electrode forming an electric field with the pixel electrode; And And a liquid crystal layer formed between the thin film transistor substrate and the color filter substrate. Partitioning the cell region on the substrate to form a black matrix that blocks light; Forming a transparent electrode on a rear surface of the substrate corresponding to the black matrix; Forming a color filter in a cell region of the substrate partitioned by the black matrix; Forming an overcoat layer to planarize the substrate on which the step is formed by the color filter; And And forming an alignment layer formed on the overcoat layer and aligning liquid crystal molecules in a predetermined direction. The method of claim 5, The transparent electrode is a liquid crystal display device manufacturing method characterized in that formed by a back exposure process. The method of claim 6, The back exposure process may include forming a transparent film on the back surface of the substrate on which the black matrix is formed, forming a photoresist film on the transparent film, and performing a back exposure using the black matrix as a blocking film. And removing the photoresist pattern to form a transparent electrode by selectively removing the transparent layer using the photoresist pattern as a blocking film. The method of claim 6, The transparent electrode is a liquid crystal display device, characterized in that formed using a black matrix as a mask without a separate mask. The method of claim 5, The transparent electrode material is any one of a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) or a crystallized amorphous silicon layer. Forming a black matrix blocking light by dividing the cell region on the first substrate; Forming a transparent electrode on a rear surface of the first substrate corresponding to the black matrix; Forming a color filter in a cell region of the first substrate partitioned by the black matrix; Forming an overcoat layer to planarize a first substrate having a step formed by the color filter; Forming an alignment layer formed on the overcoat layer to align liquid crystal molecules in a predetermined direction; Forming a thin film transistor supplying a pixel signal on a second substrate; Forming a pixel electrode on the second substrate, the pixel electrode electrically connected to the thin film transistor and to which a pixel signal is supplied; Forming a common electrode on the second substrate to form an electric field with the pixel electrode; And Forming a liquid crystal layer between the first substrate and the second substrate; liquid crystal display device comprising a. The method of claim 10, The transparent electrode material may be selected from a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or a crystallized amorphous silicon layer. The method of claim 10, The transparent electrode is a liquid crystal display device manufacturing method characterized in that formed by a back exposure process. The method of claim 12, The back exposure process may include forming a transparent film on the back surface of the substrate on which the black matrix is formed, forming a photoresist film on the transparent film, and performing a back exposure using the black matrix as a blocking film. And removing the photoresist pattern to form a transparent electrode by selectively removing the transparent layer using the photoresist pattern as a blocking film. The method of claim 12, The transparent electrode is a liquid crystal display device, characterized in that formed using a black matrix as a mask without a separate mask.

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