KR20090052071A - Method of forming pattern of semi conductor device - Google Patents

Method of forming pattern of semi conductor device Download PDF

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Publication number
KR20090052071A
KR20090052071A KR1020070118595A KR20070118595A KR20090052071A KR 20090052071 A KR20090052071 A KR 20090052071A KR 1020070118595 A KR1020070118595 A KR 1020070118595A KR 20070118595 A KR20070118595 A KR 20070118595A KR 20090052071 A KR20090052071 A KR 20090052071A
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KR
South Korea
Prior art keywords
photoresist
pattern
forming
modified layer
layer
Prior art date
Application number
KR1020070118595A
Other languages
Korean (ko)
Inventor
양철훈
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070118595A priority Critical patent/KR20090052071A/en
Publication of KR20090052071A publication Critical patent/KR20090052071A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a method of forming a pattern of a semiconductor device, the method comprising: forming an etched layer on a semiconductor substrate, forming a photoresist on the etched layer, and selectively performing an exposure process on the photoresist And forming a modified layer on the surface of the photoresist to increase the surface tension of the surface of the photoresist and performing a developing process on the photoresist, thereby forming a precise photoresist pattern without defects. As a result, a higher performance semiconductor device can be manufactured.

Exposure process, photoresist, development process, UV bake

Description

Method of forming pattern of semiconductor device {Method of forming pattern of semi conductor device}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a pattern of a semiconductor device, and more particularly to a method of forming a pattern of a semiconductor device capable of preventing defects caused by a pattern remaining without being removed during the development process.

In a pattern forming process of a conventional semiconductor device, a photoresist pattern is formed by a photolithography process on a predetermined etching layer, for example, a silicon film, an insulating film, or a conductive film, for forming a pattern. The etched layer is etched using the photoresist pattern as an etching mask to form a desired pattern. However, according to the high integration of semiconductor devices, a smaller design rule of CD is applied, thereby forming a contact hole having a small opening size or a fine pattern having a small width. This is required. Therefore, in the photolithography process, forming a fine and defect-free photoresist pattern has become an important issue.

In this photolithography process, a photoresist film is first formed on an etching target layer to be formed with a pattern. Then, an exposure process is performed in a desired pattern shape on the photoresist film by using a reticle. A developing process using a solvent is performed on the selectively exposed photoresist film to remove the remaining portions of the photoresist film except for the desired pattern.

3 is a SEM photograph of a photoresist pattern showing a defect generated after a developing process in a conventional process.

Only the desired pattern should remain after the developing process, but photoresist scum, which are not melted but aggregated together, may remain on the upper part of the photoresist melted and removed during the developing process, thereby causing defects (reference numeral A). The reason why the defect A is generated is that the photoresist residue and the intact pattern have almost similar surface properties to each other, although the amount and fluidity of the solvent supplied in the developing step are sufficient. Therefore, a defect A occurs because once the photoresist residue is attached to the upper part of the pattern, it is not separated.

The present invention can harden the photoresist surface to form a modified layer, thereby changing the physical properties of the photoresist surface, thereby preventing the photoresist residue generated in the developing step from being attached to the photoresist pattern.

The method of forming a pattern of a semiconductor device according to the present invention may include forming an etched layer on a semiconductor substrate, forming a photoresist on the etched layer, and selectively performing an exposure process on the photoresist; And forming a denatured layer on the surface of the photoresist to increase the surface tension of the surface of the photoresist and performing a developing process on the photoresist.

The modified layer may be formed by curing the surface of the photoresist. The modified layer may be formed by performing a heat treatment process on the surface of the photoresist. The modified layer may be formed by performing a UV bake process on the surface of the photoresist. The method may further include performing a post bake process before the developing process.

The pattern formation method of the semiconductor element which concerns on this invention can prevent that a photoresist residue adheres to a pattern and produces a defect, when forming a photoresist pattern. As a result, since a precise photoresist pattern without defects can be formed, a higher performance semiconductor device can be manufactured.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention.

However, the present invention is not limited to the embodiments described below, but may be implemented in various forms, and the scope of the present invention is not limited to the embodiments described below. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention. Only this embodiment is provided to complete the disclosure of the present invention and to fully inform those skilled in the art, the scope of the present invention should be understood by the claims of the present application. In addition, when an arbitrary film is described as being formed on another film or on a semiconductor substrate, the arbitrary film may be formed in direct contact with the other film or the semiconductor substrate, or may be formed with a third film interposed therebetween. . In addition, the thickness or size of each layer shown in the drawings may be exaggerated for convenience and clarity of description.

1A to 1D are cross-sectional views of a device for explaining a method of forming a pattern of a semiconductor device according to the present invention. 2 is a schematic diagram of a thermal processing apparatus shown for explaining a method of forming a pattern of a semiconductor device according to the present invention.

Referring to FIG. 1A, an etched layer 104 to form a pattern is formed on a semiconductor substrate 102. In order to form a pattern on the etched layer 104 by a photolithography process, first, the photoresist 106 is uniformly applied on the etched layer 104 by a spin method. The photoresist 106 is a kind of photo-sensitive polymer that performs a photo exposure reaction upon receiving light of a specific wavelength band.

Subsequently, a soft bake is performed on the photoresist 106 to evaporate and dry a solvent, which is a solvent present in the photoresist 106 by about 80% to 90%, by thermal energy to dry it. The stress can be relieved by the thermal annealing effect.

Referring to FIG. 1B, an exposure process is performed by selectively irradiating a photoresist 106 with a light source using a photomask (reference numeral M) having a light shielding pattern and a light transmitting pattern formed thereon. The exposure process selectively causes the photochemical reaction of the photoresist 106 by the exposure energy to form a latent image of a desired pattern on the surface of the photoresist 106. At this time, the polymer chain of the exposed portion of the photoresist 106 is broken or more strongly bonded.

In general, the photoresist 106 is divided into a positive photoresist in which the polymer bond chains of the exposed portions are broken, and a negative photoresist in which the polymer bond chains of the unexposed portions are broken. That is, through the subsequent development process, the Portage photoresist develops the exposed area to leave the pattern of the non-exposed area, and the negative photoresist develops the non-exposed area to leave the pattern of the exposed area. The photoresist 106 shown in FIG. 1B illustrates a positive photoresist as an example, and the polymer bond chain of the exposed portion may be broken to form an unexposed portion and a predetermined step d.

Referring to FIG. 1C, a curing process is performed on the photoresist 106 to form a modified layer 106a on the surface of the photoresist 106. The modified layer 106a may be formed by curing the surface of the photoresist 106 to change physical properties of the surface of the photoresist 106. That is, the surface tension of the surface of the photoresist 106 can be further increased to prevent impurities from adhering to the surface of the photoresist 106.

The modified layer 106a may be formed by performing a thermal process on the photoresist 106 by the thermal process apparatus 200 illustrated in FIG. 2. To this end, the wafer W on which the photoresist 106 is formed is placed on a hot plate P, and then the back surface of the wafer W is heated using the hot plate P, and at the same time, the wafer W The entire surface of the wafer W is heated using the hot wire coil C having a distance l of about 1 to 10 cm away from the top surface. As a result, the surface of the photoresist 106 may be hardened to change physical properties, thereby forming the modified layer 106a.

In addition, the modified layer 106a may be formed by performing a UV bake process on the photoresist 106. To this end, by irradiating the photoresist 106 with a UV lamp for a short time of 1 to 9 seconds or less, the surface of the photoresist 106 may be cured to change physical properties, thereby forming a modified layer 106a.

Referring to FIG. 1D, a post exposure bake (PEB) process is performed to heat-treat the photoresist 106 on which the modified layer 106a is formed for a predetermined time. Then, a development process is performed on the photoresist 106 to dissolve the photoresist 106 in the portion where the bonding is weakened in the exposure process with a solvent. Through this process, the photoresist 106 pattern is formed. At this time, in the case of the positive photoresist, the polymer chain portion released by the photosensitive action is removed, and in the case of the negative photoresist, the unexposed portion in which the bonding is weaker is removed compared to the portion in which the bond is strengthened by the photosensitive action.

On the other hand, in the above-described process, the modified layer 106a is formed on the surface of the photoresist 106 to change the physical properties of the surface of the photoresist 106 to increase the surface tension of the surface of the photoresist 106. Therefore, since the photoresist residues generated in the developing process are peeled off without being attached to the upper portion of the photoresist 106 pattern, it is possible to prevent defects in the photoresist 106 pattern.

1A to 1D are cross-sectional views of a device for explaining a method of forming a pattern of a semiconductor device according to the present invention.

2 is a schematic diagram of a thermal processing apparatus shown for explaining a method of forming a pattern of a semiconductor device according to the present invention.

3 is a SEM photograph of a photoresist pattern showing a defect generated after a developing process in a conventional process.

<Description of the symbols for the main parts of the drawings>

102 semiconductor substrate 104 etched layer

106: photoresist 106a: modified layer

Claims (5)

Forming an etched layer on the semiconductor substrate; Forming a photoresist on the etched layer; Selectively performing an exposure process on the photoresist; Forming a modified layer on the photoresist surface to increase the surface tension of the photoresist surface; And And developing the photoresist. The method of claim 1, And the modified layer is formed by curing the surface of the photoresist. The method of claim 1, And the modified layer is formed by performing a heat treatment process on the surface of the photoresist. The method of claim 1, And the modified layer is formed by performing a UV bake process on the surface of the photoresist. The method of claim 1, The method of forming a pattern of a semiconductor device further comprising the step of performing a post-baking step before the developing step.
KR1020070118595A 2007-11-20 2007-11-20 Method of forming pattern of semi conductor device KR20090052071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070118595A KR20090052071A (en) 2007-11-20 2007-11-20 Method of forming pattern of semi conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070118595A KR20090052071A (en) 2007-11-20 2007-11-20 Method of forming pattern of semi conductor device

Publications (1)

Publication Number Publication Date
KR20090052071A true KR20090052071A (en) 2009-05-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070118595A KR20090052071A (en) 2007-11-20 2007-11-20 Method of forming pattern of semi conductor device

Country Status (1)

Country Link
KR (1) KR20090052071A (en)

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