KR100866681B1 - Method for forming pattern of semiconductor device - Google Patents

Method for forming pattern of semiconductor device Download PDF

Info

Publication number
KR100866681B1
KR100866681B1 KR1020070086968A KR20070086968A KR100866681B1 KR 100866681 B1 KR100866681 B1 KR 100866681B1 KR 1020070086968 A KR1020070086968 A KR 1020070086968A KR 20070086968 A KR20070086968 A KR 20070086968A KR 100866681 B1 KR100866681 B1 KR 100866681B1
Authority
KR
South Korea
Prior art keywords
film
barc
etching
thickness
pattern
Prior art date
Application number
KR1020070086968A
Other languages
Korean (ko)
Inventor
김수홍
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020070086968A priority Critical patent/KR100866681B1/en
Application granted granted Critical
Publication of KR100866681B1 publication Critical patent/KR100866681B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

The pattern formation method of the semiconductor device is provided to reduce thickness of the photosensitive film and BARC(Bottom Anti-Reflection. Coating) film by using the BARC film as the hard mask. The etch target layer, for example, the polysilicon layer(202) for the gate is formed on the semiconductor substrate(200). The bottom anti-reflective coating(204) serving of the hard mask and reflection barrier layer is formed on the polysilicon layer for the gate. The photosensitive film is applied on the bottom anti-reflective coating. The photosensitive film is exposed and developed to form the photosensitive pattern(206) defining the pattern formation area(gate forming area).

Description

Method for forming pattern of semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to improve the fineness of DI CD (Develop Inspection Critical Dimension) while reducing the thickness of the photosensitive film and BARC film when the BARC film is used as a hard mask. It relates to a method for forming a pattern of a semiconductor device that can be.

As is well known, various patterns in manufacturing a semiconductor device are mostly formed using a photolithography process. The photolithography process includes a unit process of etching, by etching, exposing and developing a photoresist layer on an object to be etched to form a photoresist pattern, using the photoresist pattern as an etching mask.

On the other hand, as the integration of semiconductor devices progresses, an exposure process using a shorter wavelength light source is required to form a fine pattern. As the light source having a shorter wavelength is used, the reflection of light is very severe, and thus a pattern having a desired shape can be obtained. It could not form.

Thus, by forming a BARC (Bottom Anti-Reflection Coating) film as an anti-reflection film prior to the application of the photosensitive film, the subsequent exposure process and the implementation of the fine pattern can be reliably performed. In addition, recently, a technique for etching an etching target layer using the BARC film itself as a hard mask has been proposed.

For example, a technique of using a BARC film as a hard mask to form a gate is as follows.

First, a BARC film to be used as a hard mask is formed as well as acting as an anti-reflection film on the gate polysilicon film. Then, after applying the photoresist film on the BARC film, the photoresist film is exposed and developed to form a photoresist pattern defining the gate formation region. Subsequently, a BARC film is etched using the photoresist pattern as an etch mask, and a gate polysilicon film is etched using the etched BARC film as a hard mask to form a gate.

At this time, when the BARC film is etched, the photoresist pattern is removed together. Similarly, when the gate polysilicon film is etched, the BARC film used as a hard mask is removed together.

In the above, for the PEP (Photo Etch Process) of the BARC film, the photoresist coated on the BARC film should be thickened. For example, a BARC film of approximately 600 GPa is required as a hard mask for etching a gate polysilicon film, and a photosensitive film having a thickness of 4000 GPa or more is required to etch the BARC film of about 600 GPa by a Reaction Ion Etching (RIE) process. .

However, if the thickness of the photoresist film is thick in this manner, it is disadvantageous to define DI CD (Develop Inspection Critical Dimension) as much as a result. As a result, the final pattern having the desired FI (Final Inspection) CD, that is, the gate is removed. There is a difficulty in forming.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. Formation of a semiconductor device capable of improving the depth of DI CD while reducing the thickness of the BARC film as well as the thickness of the photoresist film when the BARC film is used as a hard mask. The purpose is to provide a method.

According to an aspect of the present invention, there is provided a method of forming a pattern of a semiconductor device, comprising: forming an etching target layer on an upper surface of a semiconductor substrate in a method of forming a pattern of a semiconductor device using a BARC film as a hard mask; Forming a BARC film on the etching target layer; Coating a photoresist film on the BARC film; Exposing and developing the photoresist to form a photoresist pattern defining a pattern formation region; Etching the BARC film using the photoresist pattern as an etching mask; Hardening the etched BARC film; And etching the etching target layer using the cured BARC layer as a hard mask.

Here, the method of the present invention described above, wherein the BARC film and the photosensitive film are formed to have a reduced thickness corresponding to the reduced thickness and the reduced BARC film thickness than the hard mask thickness required for the etching target layer, respectively.

For example, the BARC film is formed to a thickness of 200 to 400 kPa, and the photosensitive film is applied to a thickness of 2000 to 2500 kPa.

In addition, the method of the present invention performs the etching of the etching target layer by a reaction ion etching (RIE) method.

According to the present invention, after etching the BARC film, the etched BARC film may be cured, and thus, the etching target layer may be stably etched despite the relatively thin thickness. Can be reduced to improve the fineness of DI CD.

In addition, since the present invention can lower the thickness of the BARC film and the photosensitive film, the cost can be reduced and the thickness uniformity can be increased.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, the technical principle of the present invention will be briefly described with reference to FIG.

As shown in (a) of the left side of FIG. 1, when the BARC film 104 is formed thick on the etching target layer 102 as a hard mask, the thickness of the photosensitive film 106 applied on the BARC film 104 is also increased. must do it.

On the other hand, as shown in (b) of the right side of FIG. 1, when the thickness of the BARC film 104 is relatively reduced, the thickness of the photoresist film applied thereon may also be reduced.

However, in the actual process, the thickness of the BARC film and the photosensitive film cannot be reduced. This is because a BARC film having a predetermined thickness or more is required to etch an object to be etched, for example, a conventional polysilicon film having a thick thickness by a RIE process, and a very thick photosensitive film is required to etch a BARC film having a predetermined thickness or more. .

Therefore, if a thin BARC film can withstand a hard mask sufficiently during the etching of the etching target layer, the thickness of the BARC film as well as the photoresist film for etching the BARC film can be lowered, thereby improving the DI CD. In addition, the FI CD and uniformity of the resulting pattern can also be improved.

Accordingly, the present invention forms a BARC film with a thinner thickness than the conventional one, and also lowers the thickness of the photosensitive film applied thereon, and hardens the etched BARC film after etching the BARC film using the photosensitive film as an etching mask. ) At this time, the curing of the BARC film may be applied to various methods, such as a method of increasing the temperature.

In this case, the cured BARC film can be sufficiently endured as a hard mask during the etching of the target layer of conventional thickness even though the cured BARC film has a relatively reduced thickness, i. In addition, by applying a BARC film having a relatively thin thickness, the thickness of the photoresist film required for etching the BARC film having such a reduced thickness can be lowered, and as a result, the present invention can improve the DI CD fine, and furthermore, the pattern The thickness uniformity and reliability can be increased.

2A to 2C are cross-sectional views illustrating processes for forming a pattern of a semiconductor device according to an embodiment of the present invention, which will be described below.

Referring to FIG. 2A, an etching target layer, for example, a gate polysilicon layer 202 is formed on the semiconductor substrate 200 on which a predetermined underlayer is formed. At this time, although not specifically described, the gate polysilicon film 202 is formed to a thickness generally applied in a semiconductor manufacturing process.

A BARC film 204 is formed on the gate polysilicon film 202 to serve as an anti-reflection film and a hard mask. Then, after the photoresist is applied on the BARC film 204, the photoresist is exposed and developed to form a photoresist pattern 206 defining a pattern formation region, that is, a gate formation region. In this case, the BARC film 204 is formed to a thickness of about 200 to 400 kPa if the thickness is lower than that of the conventional art, for example, about 600 kPa. In addition, the photosensitive film for etching the BARC film 204 is applied with a thickness of about 2000 to 2500 kPa if the conventional thickness is about 4000 kPa.

Referring to FIG. 2B, the BARC film 204 is etched using the photoresist pattern as an etching mask. At this time, the photoresist pattern is removed together during the etching of the BARC film 204. If the photoresist pattern is not removed during the etching of the BARC film 204, it can be removed during the subsequent etching of the BARC film, so that a separate process for removing the photoresist pattern is not necessary.

Then, the etched BARC film 204 is hardened. The hardening of the BARC film 204 can be applied in various ways, such as a method of increasing the temperature, and a method of not causing damage to the semiconductor substrate 200 or a method having a very small degree even if induced. It is preferable to.

Referring to FIG. 2C, the gate polysilicon layer 202 as an etching target layer is etched using the etched BARC layer as a hard mask. At this time, since the BARC film according to the present invention has been cured, even though it has a thinner thickness than the conventional one, the BARC film can be more reliably performed as a hard mask. Thus, the present invention is also desired as a thin BARC film. A thick gate polysilicon film can be etched stably.

Therefore, the present invention can lower the thickness of the BARC film and the photoresist film, thereby improving the CD diff, such as the improvement of the focus margin in the PEP process, and by using a smaller amount of the photoresist film and the BARC film. The thickness uniformity can be increased, and the cost can be reduced by reducing the thickness of the BARC film and the photosensitive film.

As mentioned above, although the present invention has been illustrated and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. It can be easily understood by those skilled in the art that can be modified and modified.

1 is a cross-sectional view illustrating the technical principle of the present invention.

2A through 2C are cross-sectional views of processes for describing a method of forming a pattern of a semiconductor device according to example embodiments.

-Explanation of symbols for the main parts of the drawing-

200 semiconductor substrate 202 polysilicon film for gate

204: BARC film 206: photosensitive film

Claims (4)

In the method of forming a pattern of a semiconductor device using a BARC film as a hard mask, Forming an etching target layer on the semiconductor substrate; Forming a BARC film on the etching target layer; Coating a photoresist film on the BARC film; Exposing and developing the photoresist to form a photoresist pattern defining a pattern formation region; Etching the BARC film using the photoresist pattern as an etching mask; Hardening the etched BARC film; And Etching the etching target layer using the cured BARC layer as a hard mask; Pattern forming method of a semiconductor device comprising a. The semiconductor of claim 1, wherein each of the BARC layer and the photoresist layer is formed to have a thickness smaller than a hard mask thickness required for etching the etching target layer and a thickness corresponding to the thickness of the BARC layer. Method of forming a pattern of the device. The method of forming a semiconductor device according to claim 2, wherein the BARC film is formed to a thickness of 200 to 400 kPa, and the photosensitive film is coated to a thickness of 2000 to 2500 kPa. The method of claim 1, wherein the etching of the etching target layer is performed by a reaction ion etching (RIE) method.
KR1020070086968A 2007-08-29 2007-08-29 Method for forming pattern of semiconductor device KR100866681B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070086968A KR100866681B1 (en) 2007-08-29 2007-08-29 Method for forming pattern of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070086968A KR100866681B1 (en) 2007-08-29 2007-08-29 Method for forming pattern of semiconductor device

Publications (1)

Publication Number Publication Date
KR100866681B1 true KR100866681B1 (en) 2008-11-04

Family

ID=40283552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070086968A KR100866681B1 (en) 2007-08-29 2007-08-29 Method for forming pattern of semiconductor device

Country Status (1)

Country Link
KR (1) KR100866681B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9806168B2 (en) 2015-02-12 2017-10-31 Samsung Electronics Co., Ltd. Semiconductor devices and methods for fabricating the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221698A (en) 1999-01-29 2000-08-11 Sony Corp Production of electronic device
JP2000235969A (en) 1999-02-15 2000-08-29 Sony Corp Manufacture of semiconductor device
KR20020002891A (en) * 2000-06-30 2002-01-10 박종섭 Method for forming micro-pattern of semiconductor device
KR20050073106A (en) * 2004-01-08 2005-07-13 주식회사 하이닉스반도체 Method for forming fine pattern in semiconductor
KR100675875B1 (en) 2000-06-30 2007-02-05 주식회사 하이닉스반도체 Method for forming minute patterns of semiconductor device by using organic bottom anti-reflective coating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221698A (en) 1999-01-29 2000-08-11 Sony Corp Production of electronic device
JP2000235969A (en) 1999-02-15 2000-08-29 Sony Corp Manufacture of semiconductor device
KR20020002891A (en) * 2000-06-30 2002-01-10 박종섭 Method for forming micro-pattern of semiconductor device
KR100675875B1 (en) 2000-06-30 2007-02-05 주식회사 하이닉스반도체 Method for forming minute patterns of semiconductor device by using organic bottom anti-reflective coating
KR20050073106A (en) * 2004-01-08 2005-07-13 주식회사 하이닉스반도체 Method for forming fine pattern in semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9806168B2 (en) 2015-02-12 2017-10-31 Samsung Electronics Co., Ltd. Semiconductor devices and methods for fabricating the same
US10043889B2 (en) 2015-02-12 2018-08-07 Samsung Electronics Co., Ltd. Semiconductor devices

Similar Documents

Publication Publication Date Title
US8546048B2 (en) Forming sloped resist, via, and metal conductor structures using banded reticle structures
US9378974B2 (en) Method for chemical polishing and planarization
CN107168010B (en) Method for manufacturing photoetching mask
KR20110112727A (en) Method of fabricating a pattern in semiconductor device using double patterning technology
KR100741926B1 (en) Method for forming poly-silicon pattern
KR100866681B1 (en) Method for forming pattern of semiconductor device
US20040166447A1 (en) Method for shrinking pattern photoresist
US7906272B2 (en) Method of forming a pattern of a semiconductor device
KR100807074B1 (en) Method for fabrication a semiconductor device
KR100300073B1 (en) Manufacturing method for photoresist pattern in semiconductor device
KR20070000204A (en) Method for manufacturing fine pattern
KR100602129B1 (en) Method for forming pattern using multi-level exposure process
JP2008135649A (en) Method for manufacturing semiconductor device
KR100827488B1 (en) Method for forming a metal line pattern of the semiconductor device
JP2010118501A (en) Method for manufacturing semiconductor device
KR0179339B1 (en) Method of forming photoresist pattern
KR101096208B1 (en) Method for forming isolation patterns of semiocnductor device
US20060127820A1 (en) Method for forming photoresist pattern and method for triming photoresist pattern
KR100596860B1 (en) A method for forming a fine pattern transistor of a semiconductor device
KR20110108712A (en) Method for fabricating contact hole in semiconductor device
KR100924866B1 (en) Method for forming contact of semiconductor device
KR20040057634A (en) Method for forming align vernier
KR100702801B1 (en) Method of fabricating metal lines by dual damascene process
KR100880234B1 (en) Method for fabricating optical proximity correction mask
KR20050066895A (en) Method for fabricating fine contact hole

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110920

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20120926

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee