KR20090042351A - Liquid crystal display device and method of fabricating the same - Google Patents

Liquid crystal display device and method of fabricating the same Download PDF

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Publication number
KR20090042351A
KR20090042351A KR1020070108060A KR20070108060A KR20090042351A KR 20090042351 A KR20090042351 A KR 20090042351A KR 1020070108060 A KR1020070108060 A KR 1020070108060A KR 20070108060 A KR20070108060 A KR 20070108060A KR 20090042351 A KR20090042351 A KR 20090042351A
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South Korea
Prior art keywords
layer
elastic layer
forming
elastic
liquid crystal
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KR1020070108060A
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Korean (ko)
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김태현
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엘지이노텍 주식회사
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Priority to KR1020070108060A priority Critical patent/KR20090042351A/en
Publication of KR20090042351A publication Critical patent/KR20090042351A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/161—Gaskets; Spacers; Sealing of cells; Filling or closing of cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/503—Arrangements improving the resistance to shock

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)

Abstract

A liquid crystal display device is disclosed. The liquid crystal display device includes a wiring layer, a first elastic layer disposed on the wiring layer, a second elastic layer disposed on the first elastic layer, and a liquid crystal layer interposed between the first elastic layer and the second elastic layer.

Description

Liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

Embodiments relate to a liquid crystal display and a method of manufacturing the same.

As the information society develops, the demand for display devices is increasing in various forms. Various flat panel displays such as liquid crystal displays (LCDs), plasma display panels (PDPs), and electro luminescent displays (ELDs) are being utilized.

In particular, the utilization of the flexible flat panel display is increasing.

An embodiment is to provide a flexible liquid crystal display device.

The liquid crystal display according to the embodiment is interposed between a wiring layer, a first elastic layer disposed on the wiring layer, a second elastic layer disposed on the first elastic layer, and the first elastic layer and the second elastic layer. It includes a liquid crystal layer.

The liquid crystal display according to the embodiment includes a first elastic layer supporting the wiring layer and a second elastic layer disposed on the first elastic layer, and since the first elastic layer and the second elastic layer are flexible, the liquid crystal is flexible. The display device can be implemented.

1 is a cross-sectional view illustrating a liquid crystal display device according to an embodiment. 2 is a cross-sectional view showing a wiring layer and a first elastic layer. In FIG. 1 and FIG. 2, components are exaggerated for explanation.

1 and 2, the liquid crystal display according to the embodiment includes an outer protective film 100, a wiring layer 200, a first elastic layer 300, a second elastic layer 400, a liquid crystal layer 500, The spacer 600 includes an electrode layer 700 and a color filter layer 800.

The outer passivation layer 100 protects the wiring layer 200 and the color filter layer 800. For example, the outer protective layer 100 protects the wiring layer 200 and the color filter layer 800 from moisture, heat, oxygen, and the like.

Examples of the material that can be used as the outer protective film 100 include polyimide resin or acrylic resin. The outer protective layer 100 may include, for example, a first outer protective layer 110 and a second outer protective layer 120 that are disposed to face each other.

The thickness of the first outer protective film 110 and the second outer protective film 120 is, for example, about 5 to 10㎛.

The wiring layer 200 is disposed inside the outer protective layer 100. For example, the first outer passivation layer 110 may be disposed on the first outer passivation layer 110.

The wiring layer 200 forms an electric field for each pixel, which is a unit for displaying an image. The wiring layer 200 includes a gate wiring, an insulating film 220, a data wiring 240, a thin film transistor, a passivation layer 250, and a pixel electrode 260.

The gate line is disposed on the first outer passivation layer 110. For example, the gate lines may extend in the first direction, and a plurality of gate lines may be disposed. The thin film transistor is operated by an electrical signal applied through the gate wiring.

Examples of the material that can be used as the gate wiring include a metal or a conductive polymer. Examples of the conductive polymer include polyacetylene, polypyrrole, polyphenylene vinylene, and polythiophene. (polythiophene), polyalkylthiophene, polyphenylene, etc. are mentioned.

The insulating layer 220 covers the gate wiring and insulates the gate wiring. Examples of the material that may be used as the insulating film 220 may include silicon oxide (SiOx) or silicon nitride (SiNx), and examples of the material that may be used as the insulating film 220 may include an organic material. .

The data line 240 is disposed on the insulating layer 220, crosses the gate line, and is disposed in a second direction. An example of a material used as the data line 240 is the same as an example of a material used as the gate line.

The data line 240 is electrically connected to the thin film transistor, and an electrical signal is applied to the pixel electrode 260 through the data line 240.

The thin film transistor is electrically connected to the data line 240. A plurality of thin film transistors may be disposed on the first outer passivation layer 110, and the thin film transistors are operated by a signal applied through the gate line.

That is, the thin film transistor is turned on / off by a signal applied through the gate line, and transmits an electrical signal applied from the data line 240 to the pixel electrode 260.

One thin film transistor may be disposed in each pixel, and the thin film transistor may include a gate electrode 210, a channel pattern, a source electrode 241, and a drain electrode 242.

The gate electrode 210 is disposed on the first outer passivation layer 110 and branches from the gate wiring.

The channel pattern 230 is disposed corresponding to the gate electrode 210, and is disposed on the insulating layer 220. The channel pattern 230 includes, for example, a silicon pattern 231 and an ohmic contact layer 232.

The silicon pattern 231 is made of amorphous silicon, and the ohmic contact layer 232 is disposed on the silicon pattern 231 so as to be spaced apart from each other, and impurities are injected.

The source electrode 241 is disposed on one of the pair of ohmic contact layers 232, and is electrically connected to the data line 240. The source electrode 241 is branched from, for example, the data line 240.

The drain electrode 242 is disposed on the other one of the pair of ohmic contact layers 232 and is electrically connected to the pixel electrode 260. The drain electrode 242 is spaced apart from the source electrode 241 at a predetermined interval.

The passivation layer 250 is formed on the insulating layer 220. The passivation layer 250 covers the data line 240 and the thin film transistor. An example of a material used as the passivation layer 250 is the same as an example of a material used as the insulating layer 220.

The pixel electrode 260 is disposed on the passivation layer 250 and electrically connected to the source electrode 241. Examples of the material used as the pixel electrode 260 may include indium-tin-oxide (ITO), indium-zinc-oxide (IZO), or a transparent conductive polymer material. have.

Alternatively, the wiring layer 200 may include, for example, flexible electrodes disposed for each pixel and wirings connected to the electrodes, respectively. For example, the wiring layer 200 may form an electric field in a passive matrix manner. In this case, examples of the material used as the electrodes and the wirings may include a conductive polymer.

The first elastic layer 300 is disposed on the wiring layer 200, and the first elastic layer 300 is flexible. The thickness of the first elastic layer 300 is, for example, about 0.1mm to 0.3mm, the first elastic layer 300 is transparent.

The first elastic layer 300 is coupled to the wiring layer 200 to support the wiring layer 200. An example of a material that may be used as the first elastic layer 300 may include an elastomer or the like.

In more detail, the material used as the first elastic layer 300 is, for example, polydimethylsiloxane (PDMS).

Polydimethylsiloxanes are very flexible, flexible, and have hydrophobic properties on the surface.

In addition, the polydimethylsiloxane may be stably adhered to a relatively large area of the substrate 910, and when molding due to low interfacial free energy, adhesion does not occur well so that moldability is good.

In addition, polydimethylsiloxane has high transparency and has a very strong durability. In addition, polydimethylsiloxane is easy to control the interfacial free energy.

Therefore, polydimethylsiloxane is used for the first elastic layer 300, and thus, a more flexible flexible liquid crystal display device can be implemented.

The second elastic layer 400 is disposed to face the first elastic layer 300, and the thickness of the second elastic layer 400 may be, for example, about 0.1 mm to 0.3 mm. The second elastic layer 400 is flexible, and an example of a material used as the second elastic layer 400 is the same as a material used as the first elastic layer 300.

The liquid crystal layer 500 is interposed between the first elastic layer 300 and the second elastic layer 400. The liquid crystal layer 500 includes a liquid crystal and adjusts the intensity of light passing through each pixel.

The spacer 600 is interposed between the first elastic layer 300 and the second elastic layer 400. The spacer 600 maintains a cell gap between the first elastic layer 300 and the second elastic layer 400.

The spacer 600 may have, for example, a bar shape, a pillar shape, or a spherical shape. An example of a material used as the spacer 600 is the same as an example of a material used as the first elastic layer 300.

For example, the first elastic layer 300, the second elastic layer 400, and the spacer 600 may be integrally formed.

The electrode layer 700 is disposed on the second elastic layer 400. The electrode layer 700 includes a common electrode. For example, one common electrode may be disposed for each pixel, and may be disposed to face the pixel electrode 260. A common voltage is applied to the common electrode.

The color filter layer 800 is disposed on the electrode layer 700. The color filter layer 800 includes a plurality of color filters. For example, the color filters may be red color filters, green color filters, and blue color filters. The color filters may be arranged, for example, one for each pixel.

The color filter layer 800 filters the white light passing through to generate light having the color of each color filter.

The color filter layer 800 may include a black matrix pattern that blocks the passage of light to a region where the color filters are not disposed.

Voltage is applied to the pixel electrode 260 by electrical signals applied to the wiring layer 200, and a common voltage applied to the common electrode is applied to the pixel electrode 260 and the common electrode. An electric field is formed.

By the formed electric field, the liquid crystal of the liquid crystal layer 500 is aligned for each pixel. By the aligned liquid crystal, the intensity of light passing through the liquid crystal layer 500 is adjusted for each pixel, and an image is displayed on the liquid crystal display.

In addition, the wiring layer 200 and the first outer protective layer 110 are supported by the first elastic layer 300, and the electrode layer 700 and the color filter layer 800 are supported by the second elastic layer 400. ) And the second outer protective film 120 are supported.

That is, the first elastic layer 300 and the second elastic layer 400 support the liquid crystal display device. In addition, since the first elastic layer 300 and the second elastic layer 400 are flexible, the liquid crystal display according to the exemplary embodiment is flexible.

3A to 3C are cross-sectional views illustrating a process of forming a wiring layer of a liquid crystal display according to an embodiment. 4A to 4D are cross-sectional views illustrating a process of forming a liquid crystal display according to an embodiment.

Referring to FIG. 3A, a substrate 910 is provided. The substrate 910 may be, for example, a glass substrate, a quartz substrate, and a silicon substrate.

A first conductive layer is then formed over the entire surface of the substrate 910. Examples of the material that can be used as the first conductive layer include a metal or a conductive polymer. Examples of the conductive polymer include polyacetylene, polyphenylene vinylene, polypyrrole, polyphenylene, polythiophene, polyalkylthiophene, and the like.

In addition, the first conductive layer may be carbon nanotubes. The carbon nanotubes are mixed in a solution and coated on the substrate 910.

After the first conductive layer is formed, the gate line extending in the first direction and the gate electrode 210 branching from the gate line are formed on the substrate 910 through a mask process.

Thereafter, an insulating layer 220 covering the gate line and the gate electrode 210 is formed on the substrate 910 over the entire area. The insulating film 220 may be an inorganic film including silicon oxide or silicon nitride, or an organic film including polyimide or the like.

Afterwards, an amorphous silicon layer and an amorphous silicon layer including impurities are stacked on the insulating layer 220, and the amorphous silicon layers are patterned by a mask process, and the silicon pattern 231 and the ohmic contact layer 232 are formed. A channel pattern 230 is formed.

For example, the silicon pattern 231 has an island shape, and the ohmic contact layer 232 is formed such that a pair is spaced apart from each other and disposed on the silicon pattern 231.

Referring to FIG. 3B, a second conductive layer covering the channel pattern 230 is formed on the insulating layer 220. Examples of materials that can be used as the second conductive layer are the same as examples of materials used as the first conductive layer.

The second conductive layer is patterned by a mask process, intersects with respect to the gate line, extends in a second direction, a source electrode 241 branched from the data line 240, and the source. Drain electrodes 242 are formed on the electrodes 241 and spaced apart from each other at predetermined intervals.

The source electrode 241 and the drain electrode 242 are respectively disposed on the pair of ohmic contact layers 232.

Thereafter, a passivation layer 250 is formed to cover the data line 240, the source electrode 241, and the drain electrode 242. In this case, an example of a material used as the passivation layer 250 is the same as an example of a material used as the insulating layer 220, and the passivation layer 250 includes a hole exposing a portion of the drain electrode 242. do.

Referring to FIG. 3C, a transparent third conductive layer is formed on the passivation layer 250. Examples of the material that can be used as the third conductive layer include indium tin oxide, indium zinc oxide, or a transparent conductive polymer.

The third conductive layer is patterned by a mask process, and a pixel electrode 260 is formed. In this case, the pixel electrode 260 contacts the exposed drain electrode 242 and is electrically connected to the pixel electrode 260.

Referring to FIG. 4A, after the wiring layer 200 is formed, a first elastic layer 300 is formed on the wiring layer 200. For example, the first elastomer layer 300 may be formed by depositing an elastomeric material by a chemical vapor deposition process.

Alternatively, the first elastic layer 300 may be formed by, for example, a molten elastomeric material disposed on the wiring layer 200 and cooled.

The elastomeric material may be, for example, polydimethylsiloxane.

Referring to FIG. 4B, a first molding pattern 920 is formed on the first elastic layer 300. In order to form the first molding pattern 920, a photoresist film is formed on the first elastic layer 300. Thereafter, the photoresist film is patterned by an exposure process and a developing process, so that a first molding pattern 920 is formed on the first elastic layer 300.

Referring to FIG. 4C, a spacer 600 is formed on a side surface of the first molding pattern 920, and a second elastic layer 400 is formed on the first molding pattern 920. In the spacer 600 and the second elastic layer 400, a molten elastomer is disposed on the side surface of the first molding pattern 920 and the first molding pattern 920 and is cooled. In this case, the first elastic layer 300, the second elastic layer 400 and the spacer 600 may be integrally formed.

Alternatively, an elastomeric material is formed by depositing on the first elastic layer 300 by a chemical vapor deposition process.

Thereafter, the first molding pattern 920 is removed by an etchant. For example, the first molding pattern 920 is removed by an etchant sprayed laterally.

Thereafter, the liquid crystal is injected between the first elastic layer 300 and the second elastic layer 400. In this case, the liquid crystal is automatically aligned when the first elastic layer 300 and the second elastic layer 400 include polydimethylsiloxane.

Thereafter, a fourth conductive layer is formed on the first elastic layer 300, and the fourth conductive layer is patterned by a mask process to form an electrode layer 700.

Thereafter, the color filter layer 800 is formed on the electrode layer 700. The color filter layer 800 may be formed by, for example, disposing a pigment on a predetermined region of the electrode layer 700 by an inkjet method.

Referring to FIG. 4D, after the color filter layer 800 is formed, the substrate 910 is removed. In this case, the substrate 910 may be removed by, for example, an etching process.

Alternatively, the lower part of the substrate 910 may be removed by a grinding process, and the remaining part of the substrate 910 may be removed by an etching process.

Thereafter, an outer passivation layer 100 is formed on the color filter layer 800 and the wiring layer 200. The outer protective layer 100 may be formed by coating an organic material on the color filter layer 800 and the wiring layer 200. Polyimide etc. are mentioned as an example of the said organic substance.

5A and 5B are cross-sectional views illustrating a process according to another manufacturing method of the liquid crystal display according to the embodiment. In the manufacturing method described in the drawings, the manufacturing method described above will be referred to, and the formation of the second elastic layer, the spacer, and the liquid crystal layer will be further described.

Referring to FIG. 5A, a second molding pattern 930 having a groove corresponding to the spacer 600 is disposed in the elastomer layer, and predetermined heat and pressure are applied to the second molding pattern 930. The heat and pressure may vary depending on the melting point of the elastomer. Thereafter, the molded elastomer layer is cooled, and the second elastic layer 400 and the spacer 600 are integrally formed.

Referring to FIG. 5B, an alignment layer is formed on the second elastic body and the spacer 600. The liquid crystal is disposed on the alignment layer, and the first elastic layer 300 is coupled to the spacer 600.

6A and 6B are cross-sectional views illustrating a process according to another manufacturing method of a liquid crystal display according to an embodiment. In the manufacturing method described in the drawings, the manufacturing method described above will be referred to, and the formation of the first elastic layer, the spacer, and the liquid crystal layer will be further described.

Referring to FIG. 6A, after the wiring layer 200 is formed on the substrate 910, a layer including an elastomer is formed on the wiring layer 200. Thereafter, a third molding pattern 940 is disposed on the elastomer layer, and the first elastic layer 300 and the spacer 600 are applied to the third molding pattern 940 by applying a predetermined heat and a predetermined pressure. To form.

Thereafter, the third molding pattern 940 is removed, and an alignment layer is formed on the first elastic layer 300. Thereafter, a liquid crystal is disposed on the first elastic layer 300, and a second elastic layer 400 is separately formed to bond the spacer 600 and the second elastic layer 400.

7A and 7B are cross-sectional views illustrating a process according to another manufacturing method of a liquid crystal display according to an embodiment. In the manufacturing method described in the drawings, the manufacturing method described above will be referred to, and the method of forming the wiring layer will be further described.

Referring to FIG. 7A, a first elastic layer 300, a spacer 600, a second elastic layer 400, and a liquid crystal layer 500 are formed.

Referring to FIG. 7B, a wiring layer 200 is formed on the first elastic layer 300. In this case, the wiring layer 200 is formed on the first elastic layer 300 in the same manner as the manufacturing method formed on the substrate 910 in FIGS. 3A to 3C.

Alternatively, the conductive polymer material is disposed on the first elastic layer 300 by any one of ink-jet printing, imprinting, and stamping. Can be formed.

In this case, the wiring layer 200 may include only a plurality of electrodes on the first elastic layer 300 and wirings respectively connected to the electrodes. That is, the wiring layer 200 may be operated by the passive matrix method.

1 is a cross-sectional view illustrating a liquid crystal display device according to an embodiment.

2 is a cross-sectional view showing a wiring layer and a first elastic layer.

3A to 3C are cross-sectional views illustrating a process of forming a wiring layer of a liquid crystal display according to an embodiment.

4A to 4D are cross-sectional views illustrating a process of forming a liquid crystal display according to an embodiment.

5A and 5B are cross-sectional views illustrating a process according to another manufacturing method of the liquid crystal display according to the embodiment.

6A and 6B are cross-sectional views illustrating a process according to another manufacturing method of a liquid crystal display according to an embodiment.

7A and 7B are cross-sectional views illustrating a process according to another manufacturing method of a liquid crystal display according to an embodiment.

Claims (20)

Wiring layer; A first elastic layer disposed on the wiring layer; A second elastic layer disposed on the first elastic layer; And And a liquid crystal layer interposed between the first elastic layer and the second elastic layer. The liquid crystal display of claim 1, further comprising a spacer interposed between the first elastic layer and the second elastic layer, wherein the first elastic layer, the second elastic layer, and the spacer are integrally formed. The liquid crystal display of claim 1, wherein the first elastic layer supports a wiring layer. The liquid crystal display of claim 1, wherein the first elastic layer and the second elastic layer comprise polydimethylsiloxane. The liquid crystal display device of claim 1, wherein the wiring layer comprises a conductive polymer. The method of claim 1, The wiring layer, A plurality of gate lines arranged in a first direction; Data lines arranged to cross the gate lines; And And a thin film transistor electrically connected to the data lines. The liquid crystal display device of claim 1, further comprising an electrode layer on the second elastic layer. The liquid crystal display of claim 7, wherein the electrode layer comprises a plurality of common electrodes receiving a common voltage. The liquid crystal display device of claim 1, further comprising a color filter layer disposed on the second elastic layer. Forming a wiring layer; Forming a first elastic layer on the wiring layer; Forming a second elastic layer opposite the first elastic layer; And Forming a liquid crystal layer between the first elastic layer and the second elastic layer. The method of claim 10, further comprising forming an electrode layer on the second elastic layer. The method of claim 10, wherein the forming of the wiring layer comprises forming a wiring layer on a substrate and removing the substrate. The method of claim 10, further comprising forming a spacer interposed between the first elastic layer and the second elastic layer. The method of claim 13, Forming the spacer and forming the second elastic layer, Forming a molding pattern on the first elastic layer; Forming an elastic material layer on the molding pattern; And And removing the first molding pattern. The method of claim 13, Forming the spacer and forming the second elastic layer is Forming an elastic material layer on the molding pattern; And And applying heat and / or pressure to the elastic material layer and / or the molding pattern. The method of claim 15, Forming the liquid crystal layer, Forming an alignment layer on the second elastic layer on which the spacer is formed; Forming a liquid crystal layer on the alignment layer; And And coupling the spacer to the first elastic layer. The method of claim 13, Forming the first elastic layer and forming the spacer, Forming an elastic material layer on the wiring layer; And And applying heat and / or pressure to the elastic material layer using a molding pattern. The method of claim 17, Forming the liquid crystal layer, Forming an alignment layer on the first elastic layer on which the spacer is formed; Forming a liquid crystal layer on the alignment layer; And Bonding the spacer to the second elastic layer. The liquid crystal display device of claim 10, wherein in the forming of the first elastic layer and the forming of the second elastic layer, the first elastic layer and the second elastic layer comprise polydimethylsiloxane. Manufacturing method. The method of claim 10, Forming the wiring layer and forming the first elastic layer, Forming a first elastic layer on the substrate; Removing the substrate; And Forming a wiring layer on the first elastic layer.
KR1020070108060A 2007-10-26 2007-10-26 Liquid crystal display device and method of fabricating the same KR20090042351A (en)

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