KR20090016841A - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device Download PDF

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Publication number
KR20090016841A
KR20090016841A KR1020070081117A KR20070081117A KR20090016841A KR 20090016841 A KR20090016841 A KR 20090016841A KR 1020070081117 A KR1020070081117 A KR 1020070081117A KR 20070081117 A KR20070081117 A KR 20070081117A KR 20090016841 A KR20090016841 A KR 20090016841A
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KR
South Korea
Prior art keywords
film
hard mask
layer
etching
etched
Prior art date
Application number
KR1020070081117A
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Korean (ko)
Inventor
조상훈
Original Assignee
주식회사 하이닉스반도체
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070081117A priority Critical patent/KR20090016841A/en
Publication of KR20090016841A publication Critical patent/KR20090016841A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A semiconductor device fabricating method is provided to improve the yield of a semiconductor device by effectively removing an etching by-product by using a glue layer. An etched layer is formed on a substrate(31). A first hard mask film, a second hard mask film, a reflection barrier layer and a photoresist pattern are successively molded on the etched layer. The reflection barrier layer, the second hard mask film and the first hard mask film are successively etched by using the photoresist pattern as an etching barrier. A glue layer is formed on the substrate including a groove. The glue layer under the groove except for the glue layer of the side wall of the groove is etched by performing an etch back process. The first hard mask layer pattern under the groove is etched. A part of the etched layer is etched with the etch process. An etching by-product(39) is formed in the side wall of the etched glue layer pattern. A contact hole(40) is formed by etching the etched layer.

Description

Semiconductor device manufacturing method {METHOD FOR FABRICATING SEMICONDUCTOR DEVICE}

The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a contact hole.

In detail, the present invention relates to a method of manufacturing a semiconductor device capable of efficiently removing etch by-products generated during contact hole formation.

As the design rule of the DRAM (Dynamic Random Access Memory) device, which represents a semiconductor device, is reduced, the hard mask layer is applied to secure the photo-resist collapse margin of the photolithography process. It is interposed between each layer and photoresist.

1A to 1C are cross-sectional views illustrating a process for forming a contact hole according to the prior art.

As shown in FIG. 1A, the etched layer 12 is formed on the substrate 11, and the first hard mask layer 13, the second hard mask layer 14, and the anti-reflection layer are formed on the etched layer 12. 15 and the photoresist pattern 16 are sequentially formed.

For example, the etched layer 12 may be an oxide film, the first hard mask film 13 may be an amorphous carbon film, and the second hard mask film 14 may be a silicon oxynitride film 15 (SiON), an antireflection film ( 15) may be an organic bottom anti reflect coating (OBARC).

As shown in FIG. 1B, the anti-reflection film 15, the second hard mask film 14, and the first hard mask film 13 are sequentially etched using the photoresist pattern 16 as an etch barrier. In addition, the etching target layer 12 is also overetched to partially etch.

In this case, an etching byproduct 15 is formed on sidewalls of the etched first hard mask layer pattern 13A.

Etching by-product 15 is an etching process for etching layer 12 transient, O 2 / Ar mixed gas or N 2 / O 2 / Ar first hard mask film 13 using the mixed gas of as being generated during etching of An etch by-product of the etched layer 12A that is overetched at is formed by sputtering on the sidewall of the first hard mask film pattern 13A.

As illustrated in FIG. 1C, the contact layer 16 is formed by etching the etched layer 12 using the first hard mask layer pattern 13A as an etch barrier. Thereafter, the second hard mask film pattern 14A and the first hard mask film pattern 13A are removed and a cleaning process is performed.

However, the etching by-products 15 generated during the excessive etching of the etched layer 12A are not removed in the cleaning process and remain in a sharp shape as shown in the electron micrograph of FIG. 2.

When the etching by-products 15 remain in this way, it is difficult to determine the polishing target during the planarization process for forming the plug, and it may interfere with the embedding of the plug material.

Therefore, there is a demand for a technique capable of effectively removing the etching byproduct 15 in an etching process using a hard mask film.

The present invention has been made to solve the above problems of the prior art, it is an object of the present invention to provide a method for manufacturing a semiconductor device that can efficiently remove the etching by-products generated when forming a contact hole.

The semiconductor device manufacturing method of the present invention for achieving the above object comprises the steps of forming a hard mask film on the etched layer, forming a photoresist pattern on the hard mask film, the hard photoresist pattern as an etching barrier Forming a groove by partially etching a mask layer, forming an adhesive layer on the entire surface where the groove is formed, and etching the adhesive layer and the hard mask layer under the groove to expose the etched layer, while leaving the adhesive layer on the sidewall of the groove. And etching the etched layer under the groove and removing the hard mask layer.

The present invention based on the problem solving means described above to remove the etching by-products using an adhesive film.

Therefore, the etching by-products can be removed efficiently, and the yield of the semiconductor device can be improved.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention.

In the embodiment described later, the adhesive film is formed so that the etching by-products are adsorbed on the surface of the “adhesive film excellent in adhesion”. Then, when removing the adhesive film, the etching by-products are also removed.

3A to 3F are cross-sectional views illustrating a method of forming a contact hole according to an exemplary embodiment of the present invention.

As shown in FIG. 3A, the etched layer 32 is formed on the substrate 31, and the first hard mask layer 33, the second hard mask layer 34, and the anti-reflective layer are formed on the etched layer 32. 35 and the photoresist pattern 36 are sequentially formed.

For example, the etched layer 32 may include an oxide film, for example, a silicon oxide film (SiO 2 ), a BSG (Boro Silicate Glass) film, a BOSG (Boro Phopho Silicate Glass) film, a PSG (Phospho Silicate Glass) film, It may be formed of at least one selected from the group consisting of a TEOS (Tetra Ethyl Ortho Silicate) film, an HDP (High Density Plasma) oxide film, and a SOG (Spin On Glass) film. For example, the BSG film and the BPSG film may be stacked.

The first hard mask film 33 is an amorphous carbon film or spin on carbon film, the second hard mask film 34 is a silicon oxynitride film 35 (SiON), and the antireflection film 35 is organic. It is formed of an organic bottom anti reflect coating (OBARC).

The second hard mask film 34 is a film for patterning the first hard mask film 33 and is a thin film that can be omitted when the material properties of the photoresist pattern 36 and the first hard mask film 33 are different. .

As shown in FIG. 3B, the anti-reflection film 35, the second hard mask film 34, and the first hard mask film 33 are sequentially etched using the photoresist pattern 36 as an etch barrier.

Here, the first hard mask layer 33 partially etches only 85 to 90% of its thickness to form the grooves 37. For example, when the deposition thickness of the first hard mask film 33 is 10000 kPa, the thickness etched may be 8500-9000 kPa.

The photoresist pattern 36 and the anti-reflection film 35 are consumed and removed when the first hard mask film 33 having similar material properties is etched. Alternatively, the strip may be removed by a separate strip process.

As shown in FIG. 3C, the adhesive film 38 is formed on the substrate 31 on which the grooves 37 are formed.

The adhesive film 38 is formed by polymer deposition, using a gas chemistry in which a polymer is generated in an etch chamber.

The adhesive film 38 may be formed of an amorphous carbon film or a spin-on carbon film.

Here, when the first hard mask film pattern 33A using the amorphous carbon film or the spin-on carbon film is compared with the adhesive film 38, the first hard mask film pattern 33A may be formed by chemical vapor deposition (Chemical Vapor Deposition). The adhesive film 38 is formed by a polymer deposition method.

As a result, the adhesive film 38 has a lower hardness than the first hard mask film pattern 33A.

As shown in FIG. 3D, the adhesive film 38 under the groove 37 is etched while the adhesive film 38 is left on the sidewall of the groove 37 by an etch back process.

Subsequently, the first hard mask film pattern 33A under the groove 37 is etched. In addition, the etching target layer 32 is overetched to partially etch.

In this case, an etching byproduct 39 is formed on sidewalls of the etched adhesive film pattern 38A.

Etching by-products (39) as being generated when excessive etching of the etching layer (32), O a first etching of the hard mask film pattern (33A) using a mixed gas or a gas mixture of N 2 / O 2 / Ar of 2 / Ar Etch by-products of the etched layer 32 that are overetched in the process are formed by sputtering.

3E and 3F, the contact hole 40 is formed by etching the etched layer 32A using the first hard mask layer pattern 33B as an etch barrier. Then, the second hard mask film pattern 34A, the first hard mask film pattern 33B, and the adhesive film pattern 38A are removed, and a cleaning process is performed. Removal of the first hard mask film pattern 33B may be performed by a stripping process.

Here, since the etching by-product 39 has a lower hardness than the first hard mask film pattern 33B, the adhesive film pattern 38A having softness is adhered to the etching by-product 39, thereby removing the adhesive film pattern 38A. Removed together.

In addition, since the adhesive film pattern 38A is low in hardness, the adhesive film pattern 38A may be removed even in the cleaning process, and thus the etching by-product 39 may be removed by the cleaning process.

Thus, as shown in FIG. 3F, the contact hole 40 from which the etch byproduct 39 is removed is formed.

In the above-described embodiment, the adhesive film pattern 38A is formed on the sidewall of the first hard mask film 33B having high hardness and poor adhesion to the etching byproduct 39. In detail, the adhesive film pattern 38A is formed in a region where the etching by-product 39 is sputtered.

The adhesive film pattern 38A is formed by polymer deposition, using a gas chemistry in which a polymer is generated in an etch chamber. The adhesive film pattern 38A may be formed of an amorphous carbon film or a spin-on carbon film.

Subsequently, when the adhesive film pattern 38A on which the etching byproducts 39 are adsorbed is removed, the adsorbed etching byproducts 39 are also removed. Here, the removal of the adhesive film pattern 38A may be removed together in the removal process of the first hard mask film 33B. That is, the etching by-product 39, the adhesive film pattern 38A, and the first hard mask film 33B may be removed at the same time.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

Figure 1a to 1c is a cross-sectional view showing a process for forming a contact hole according to the prior art.

2 is an electron micrograph of the etching by-products generated when the contact hole is formed.

3A to 3F are cross-sectional views illustrating a method of forming a contact hole according to an exemplary embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

31 substrate 32B etched layer

33B: first hard mask film pattern 34A: second hard mask film pattern

38A: Adhesive Film Pattern 39: Etch Byproducts

40: contact hole

Claims (8)

Forming a hard mask film on the etched layer; Forming a photoresist pattern on the hard mask film; Forming a groove by partially etching the hard mask layer using the photoresist pattern as an etch barrier; Forming an adhesive film on the entire surface where the grooves are formed; Exposing the etched layer by etching the adhesive film and the hard mask film under the groove while remaining the adhesive film on the sidewall of the groove; Etching the etched layer under the groove; And Removing the hard mask layer Semiconductor device manufacturing method comprising a. The method of claim 1, And removing the hard mask layer, followed by cleaning. The method of claim 1, The adhesive film is a semiconductor device manufacturing method having a lower hardness than the hard mask film. The method of claim 1, The adhesive film and the hard mask film is a semiconductor device manufacturing method of forming an amorphous carbon film or spin on carbon (spin on carbon). The method according to claim 1 or 4, The adhesive film is a semiconductor device manufacturing method formed by a polymer deposition method. The method according to claim 1 or 4, The hard mask film is a semiconductor device manufacturing method to form by chemical vapor deposition (Chemical Vapor Deposition). The method of claim 1, The etching layer is a semiconductor device manufacturing method of forming an oxide film. The method of claim 1, The etched layer includes a silicon oxide film (SiO 2 ), a BSG (Boro Silicate Glass) film, a BPSG (Boro Phopho Silicate Glass) film, a PSG (Phospho Silicate Glass) film, a TEOS (Tetra Ethyl Ortho Silicate) film, and an HDP (High Density Plasma) film. A semiconductor device manufacturing method formed by at least one selected from the group consisting of an oxide film and a spin on glass (SOG) film.
KR1020070081117A 2007-08-13 2007-08-13 Method for fabricating semiconductor device KR20090016841A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910679A (en) * 2015-12-22 2017-06-30 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic installation
CN110707004A (en) * 2018-10-11 2020-01-17 联华电子股份有限公司 Semiconductor device and method of forming the same
WO2021067092A1 (en) * 2019-10-01 2021-04-08 Lam Research Corporation Mask encapsulation to prevent degradation during fabrication of high aspect ratio features
CN114609868A (en) * 2022-05-12 2022-06-10 合肥晶合集成电路股份有限公司 Method for verifying photoresist defects

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910679A (en) * 2015-12-22 2017-06-30 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic installation
CN106910679B (en) * 2015-12-22 2020-09-04 中芯国际集成电路制造(上海)有限公司 Semiconductor device, preparation method thereof and electronic device
CN110707004A (en) * 2018-10-11 2020-01-17 联华电子股份有限公司 Semiconductor device and method of forming the same
WO2021067092A1 (en) * 2019-10-01 2021-04-08 Lam Research Corporation Mask encapsulation to prevent degradation during fabrication of high aspect ratio features
CN114609868A (en) * 2022-05-12 2022-06-10 合肥晶合集成电路股份有限公司 Method for verifying photoresist defects

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