KR20090005739A - Air-cooled substrate processing apparatus - Google Patents

Air-cooled substrate processing apparatus Download PDF

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Publication number
KR20090005739A
KR20090005739A KR1020070069022A KR20070069022A KR20090005739A KR 20090005739 A KR20090005739 A KR 20090005739A KR 1020070069022 A KR1020070069022 A KR 1020070069022A KR 20070069022 A KR20070069022 A KR 20070069022A KR 20090005739 A KR20090005739 A KR 20090005739A
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KR
South Korea
Prior art keywords
chamber
processing apparatus
substrate processing
substrate
cooling
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Application number
KR1020070069022A
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Korean (ko)
Inventor
유경한
Original Assignee
주성엔지니어링(주)
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Publication date
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Priority to KR1020070069022A priority Critical patent/KR20090005739A/en
Publication of KR20090005739A publication Critical patent/KR20090005739A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The air cooling type substrate processing apparatus is provided to perform efficient cool by forming integrally the radiating unit with the chamber lid or the chamber body. The substrate processing apparatus(100) comprises the chamber(110), and the substrate loading unit(120) for a plurality of substrates (s) iand the gas injector(130) spraying the gas to the top of the substrate loading unit. The chamber is comprised of the chamber body(111) and the chamber lid(112) interposing O-ring on the top of the chamber body. In the lower part of the chamber body, the exhaust pipe(116) for ejecting the residual gas and maintaining the vacuum pressure of the chamber is formed. In the substrate settling unit(122), the groove pattern in which the cooling gas like helium etc can flow is formed.

Description

Air-cooled substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to an air-cooled substrate processing apparatus for cooling a chamber by using a cooling fan.

In general, a semiconductor device is manufactured through a process of forming a circuit pattern on a silicon substrate and a packaging process of cutting the substrate into a predetermined size and encapsulating it with an epoxy resin.

In order to form a circuit pattern on a substrate, a thin film deposition process for forming a predetermined thin film, a photolithography process for forming a photoresist pattern by applying photoresist to the deposited thin film and exposing and developing the thin film using the photoresist pattern Etching process for patterning, ion implantation process for injecting specific ions into a predetermined region of the substrate, cleaning process for removing impurities, etc. Proceed.

FIG. 1 is a schematic cross-sectional view of a semi-batch type chemical vapor deposition (CVD) apparatus 10 for depositing a SiN thin film in such a substrate processing apparatus.

The CVD apparatus 10 includes a chamber 11, a substrate stabilizer 12 installed inside the chamber 11 to hold a plurality of substrates s, and an upper portion of the substrate stabilizer 12. And a gas injector 15 for injecting gas.

The chamber 11 includes a chamber lead 11b coupled to an upper end of the chamber body 11a and the chamber body 11a via an O-ring. Exhaust port 18 for maintaining a vacuum pressure therein is formed.

Semi-batch type means a device capable of processing 4 to 5 substrates simultaneously. Therefore, about 4 to 5 substrate support portions 13 on which each substrate is placed are installed on the upper surface of the substrate support 12, and cooling gas such as helium may flow in the substrate support portion 13. A groove pattern is formed.

The substrate support 12 may be installed in a rotatable structure.

A lamp heater 20 as a heating means is installed below the substrate support 12, and a resistive heating means may be installed inside the substrate support 12 in place of the lamp heater 20.

In addition, the rotating shaft 16 for rotating the gas injector 15 penetrates the center portion of the chamber lid 11b.

Four gas injectors 15 are installed, for example, and are radially connected with respect to the rotation shaft 16, respectively, and rotate together with the rotation shaft 16.

In the case of depositing a SiN thin film on the substrate s by the CVD process, the four gas injectors 15 rotate while injecting SiH 4, NH 3, SiH 4, and NH 3, respectively, and thus, the lower portion of the substrate s disposed below. SiH4 and NH3 are alternately sprayed on the upper portion to form a SiN thin film.

If the SiN thin films are deposited in atomic layer units, the four gas injectors 15 rotate while injecting SiH 4, purge gas, SiH 4, and purge gas, respectively. At this time, the non-reactive gas such as Ar, N2 is mainly used as the purge gas.

Meanwhile, in the SiN thin film deposition process, the temperature of the substrate s is heated to 700 ° C. or higher in order to increase the reactivity of the raw material SiH 4 and NH 3.

However, since the chamber lid 11b is made of aluminum having a melting point of about 630 ° C., the galden inside the chamber lead 11 b is not overheated and deformed by the radiant heat of the substrate support 12 heated to 700 ° C. or higher. A coolant flow path 17 for flowing a coolant such as galden or PCW is formed.

However, when the chamber lid 11b is cooled by using a coolant, the temperature becomes too low, and thus a thin film is deposited on the inner wall of the chamber lid 11b, thereby causing a powder.

In addition, in order to use the refrigerant, a complicated process of forming the refrigerant passage 17 inside the chamber lid 11b is required, and a complicated facility is required to circulate the refrigerant. In addition, there is a problem of environmental pollution due to galdene used as a refrigerant.

An object of the present invention is to provide a method for efficiently cooling a substrate processing apparatus using a simplified cooling apparatus.

The present invention comprises a chamber comprising a chamber body and a chamber lead coupled to the upper end of the chamber body to achieve the above object; A substrate support installed in the chamber; Gas supply means for supplying a raw material to an upper portion of the substrate stabilizer; Cooling fan; A support member for fixing the cooling fan to the outside of the chamber; Provided is a substrate treating apparatus including a heat dissipation unit having an uneven structure formed on an outer surface of the chamber to increase cooling efficiency.

In the substrate processing apparatus, the heat dissipation unit may be formed integrally with the chamber lead or the chamber body.

In addition, the heat dissipation unit may be manufactured separately from the chamber lead or the chamber body, and coupled to the outside of the chamber lead or the chamber body. It can be made of this high material.

In addition, the uneven structure of the heat dissipation portion may be characterized in that the height of the concave portion is larger than the width of the convex portion.

In addition, the concave-convex structure of the heat dissipation unit installed on the upper surface of the chamber lid may be characterized in that the concave-convex formation density at the center of the chamber lid is higher than the peripheral portion.

In addition, the support member may form a cooling space between the chamber, the support member may be characterized in that it comprises a discharge port for communicating the cooling space and the external space.

In addition, the cooling fan may be characterized in that a plurality is installed.

In addition, a temperature sensing means for sensing the temperature of the chamber lead may be installed, and at this time, may include a device control unit for controlling the rotational speed of the cooling fan by feeding back the sensing data from the temperature sensing means. have.

It may also be characterized in that it comprises a cooling line for lowering the temperature of the air supplied by the cooling fan, wherein the cooling line may be installed between the cooling fan and the chamber, based on the cooling fan It may be installed on the opposite side of the chamber.

In another aspect, the present invention, the chamber body having a substrate stabilizer therein; A chamber lid for sealing the chamber body; Heating means installed under or inside the substrate stabilizer; A substrate processing apparatus comprising a gas supply means installed on an upper portion of the substrate stabilizer, wherein the chamber lid has a recess and a recess, and the height of the recess is greater than a width of the recess. .

At this time, the chamber lid may be characterized in that the dual structure having a cooling space therein.

According to the present invention, since the cooling system of the substrate processing apparatus can be simplified as compared with the related art, the cost can be greatly reduced. In addition, there is no need to use a refrigerant (galden), which is essential for the water cooling method, thereby preventing environmental pollution.

Hereinafter, with reference to the drawings will be described a preferred embodiment of the present invention.

FIG. 2 schematically illustrates a semi-batch type CVD apparatus as a substrate processing apparatus 100 according to an embodiment of the present invention.

The substrate processing apparatus 100 includes a chamber 110, a substrate stabilizer 120 installed inside the chamber 110 to hold a plurality of substrates s, and an upper portion of the substrate stabilizer 120. And a gas injector 130 for injecting gas into the furnace.

The chamber 110 is composed of a chamber body 111 and a chamber lead 112 coupled to an upper portion of the chamber body 111 through an O-ring. The chamber body 111 discharges residual gas to the lower portion of the chamber body 111. Exhaust port 116 is formed to maintain the vacuum pressure of.

On the upper surface of the substrate stabilizer 120, four to five substrate stabilizers 122 on which one substrate is placed are generally provided, and cooling gas such as helium may flow in the substrate stabilizer 122. A groove pattern is formed.

The substrate stabilizer 120 may be rotated by the driving means.

A lamp heater 170 that is a heating means is installed below the substrate stabilizer 120, and a resistive heater may be installed inside the substrate stabilizer 120 in place of the lamp heater 170.

In the central portion of the chamber lid 112, a rotating shaft 140 for rotating the gas injector 130 is installed therethrough.

Four gas injectors 130 are installed, for example, and are respectively connected radially with respect to the rotation shaft 140 to rotate together with the rotation shaft 140.

The embodiment of the present invention is characterized in that the chamber lid 112 is cooled by air cooling instead of conventional water cooling.

That is, a predetermined support member 150 is installed on the chamber lid 112, and a cooling fan 160 is installed on the support member 150. At this time, in order to increase the surface area to increase the cooling efficiency, it is preferable to form a heat radiating portion 114 having irregularities formed on the upper surface of the chamber lid 112.

Instead of forming the chamber lid 112 and the heat dissipation unit 114 integrally, it is also possible to couple the heat dissipation plate 180 separately manufactured on the upper side of the chamber lead 112 as shown in FIG. 3. In this case, since the material having a higher thermal conductivity than the chamber lid 112 may be used as the heat sink 180, the cooling efficiency may be further increased.

On the other hand, the concave-convex structure of the heat dissipation unit 114 and the heat dissipation plate 180 should have a large surface area as possible, for this purpose, it is preferable that the height of the concave portion is at least larger than the width of the convex portion.

In addition, in general, considering that the temperature of the center portion of the substrate stabilizer 120 is higher than the peripheral portion, it is preferable that the cooling efficiency is higher at the center portion of the chamber lid 112. To this end, the uneven density of the heat dissipation unit 114 and the heat dissipation plate 180 in the center portion of the chamber lead 112 may be formed higher than the peripheral portion.

On the other hand, the support member 150 for supporting the cooling fan 160 may be a frame structure of a lattice form, or may be a form that completely covers the front surface of the chamber lead 112.

In the substrate processing apparatus 100 illustrated in FIGS. 2 and 3, the support member 150 is installed to cover the upper front surface of the chamber lid 112, and the cooling fan 160 is installed on the support member 150. It has a structure in which the discharge port 152 through which the warmed air can escape. At this time, the rotating shaft 140 is installed through the support member 150 and the chamber lead 112.

The number of the cooling fans 160 to be installed may vary depending on the size of the substrate processing apparatus 100 and the performance of the cooling fans, and in the case of installing a plurality of cooling fans 160, the cooling fans 160 are preferably spaced at the same angle with respect to the center. Do.

As shown in FIG. 4, the cooling fan 160 may be installed on the side of the support member 150, and the discharge port 152 may be installed on the upper surface of the support member 150.

Meanwhile, the chamber lid 112 may be manufactured in a dual structure having a cooling space therein without separately manufacturing the support member 150 and the chamber lid 112.

In order to more precisely control the temperature of the chamber lid 112, it is preferable to install a thermocouple 190 capable of measuring the temperature of the chamber lid 112, as shown in FIG.

The thermocouple 190 may be installed in various places of the chamber lid 112, and the sensed temperature data is transmitted to the device controller 200 to be displayed on the screen so that an administrator can know or used for automatic control.

That is, if each cooling fan 160 is connected to the device control unit 200, and the device control unit 200 to feed back the sensing data of the thermocouple 190 to adjust the rotational speed of the specific cooling fan 160, the chamber The temperature of the lid 112 can be controlled more precisely.

Meanwhile, the present invention aims to cool the chamber lid 112 by air cooling using the cooling fan 160, but in order to increase the cooling efficiency, it is also possible to build a cooling system in conjunction with the refrigerant.

For example, as shown in FIG. 6, when the cooling line 210 is installed at the lower portion of the cooling fan 160, the air introduced through the cooling fan 160 passes through the periphery of the cooling line 210. Since the temperature of the drops significantly, cooling efficiency can be increased.

Since the cooling line 210 does not necessarily need to be installed inside the support member 150, the cooling line 210 may be installed inside the air supply line connected to the outside of the support member 150 or may be installed around the air supply line.

On the other hand, while the embodiment of the present invention has been described by taking a semi-batch type CVD apparatus as an example, the present invention is characterized in that the cooling method of the substrate processing apparatus is changed from water-cooled to air-cooled. It can also be applied to a layer deposition apparatus, an etching apparatus and the like.

It is also possible to cool not only the chamber lid but also the chamber side wall by using a cooling fan after forming a heat radiating part having an uneven structure.

1 is a cross-sectional view showing a schematic configuration of a conventional semi-batch CVD apparatus

Figure 2 is a cross-sectional view showing a schematic configuration of an air-cooled substrate processing apparatus according to an embodiment of the present invention

3 is a cross-sectional view of a substrate treating apparatus incorporating a heat sink into a chamber lid.

4 is a view showing a state in which the cooling fan is installed on the side

Figure 5 is a cross-sectional view showing a configuration for controlling the cooling fan through the device control unit

6 is a view showing a state in which a cooling line is installed in the lower portion of the cooling fan.

* Description of the symbols for the main parts of the drawings *

100: substrate processing apparatus 110: chamber

112: chamber lid 114: heat dissipation unit

120: substrate support 130: gas injector

140: rotating shaft 150: support member

152: discharge port 160: cooling fan

170: lamp heater 180: heat sink

190: thermocouple 200: device control unit

210: cooling line

Claims (17)

A chamber comprising a chamber body and a chamber lead coupled to an upper end of the chamber body; A substrate support installed in the chamber; Heating means installed under or inside the substrate stabilizer; Gas supply means for supplying a raw material to an upper portion of the substrate stabilizer; Cooling fan; A support member for fixing the cooling fan to the outside of the chamber; A heat dissipation unit having an uneven structure formed on an outer surface of the chamber to increase cooling efficiency; Substrate processing apparatus comprising a The method of claim 1, The heat dissipation unit substrate processing apparatus, characterized in that formed integrally with the chamber lead or the chamber body The method of claim 1, The heat dissipating unit is manufactured separately from the chamber lead or the chamber body and is coupled to an outside of the chamber lead or the chamber body. The method of claim 3, The heat dissipation unit is a substrate processing apparatus, characterized in that made of a material having a higher thermal conductivity than the material of the chamber lead or the chamber body The method of claim 1, The convexo-concave structure of the heat dissipation unit provided on the upper surface of the chamber lid has a concave-convex formation density at the central portion of the chamber lid higher than the peripheral portion. The method of claim 1, The support member forms a cooling space between the chamber, the support member is a substrate processing apparatus, characterized in that having a discharge port for communicating the cooling space and the external space The method of claim 1, Substrate processing apparatus, characterized in that a plurality of the cooling fan is installed The method of claim 1, Substrate processing apparatus, characterized in that the temperature sensing means for detecting the temperature of the chamber lead is installed The method of claim 8, And a device controller for feeding back the sensed data from the temperature sensing means to control the rotational speed of the cooling fan. The method of claim 1, Substrate processing apparatus comprising a cooling line for lowering the temperature of the air supplied by the cooling fan The method of claim 10, The cooling line is a substrate processing apparatus, characterized in that installed between the cooling fan and the chamber. The method of claim 10, The cooling line is a substrate processing apparatus, characterized in that installed on the opposite side of the chamber with respect to the cooling fan. A chamber body having a substrate stabilizer therein; A chamber lid for sealing the chamber body; Heating means installed under or inside the substrate stabilizer; Gas supply means installed on an upper portion of the substrate stabilizer; In the substrate processing apparatus comprising: The chamber lid has a recessed portion and a convex portion, and the height of the recessed portion is larger than the width of the concave portion. The method of claim 13, The chamber lid has a dual structure having a cooling space therein The method of claim 13, A cooling fan is installed above the chamber lid, and a discharge port is formed in an upper peripheral portion of the chamber lid. The method of claim 15, Substrate processing apparatus, characterized in that the cooling line flows between the cooling fan and the chamber lead is installed The method of claim 13, The recess and the convex portion is a substrate processing apparatus, characterized in that the material is different from the chamber lead
KR1020070069022A 2007-07-10 2007-07-10 Air-cooled substrate processing apparatus KR20090005739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070069022A KR20090005739A (en) 2007-07-10 2007-07-10 Air-cooled substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070069022A KR20090005739A (en) 2007-07-10 2007-07-10 Air-cooled substrate processing apparatus

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KR20090005739A true KR20090005739A (en) 2009-01-14

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KR1020070069022A KR20090005739A (en) 2007-07-10 2007-07-10 Air-cooled substrate processing apparatus

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