KR20080114029A - Method for repair of semiconductor device - Google Patents

Method for repair of semiconductor device Download PDF

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Publication number
KR20080114029A
KR20080114029A KR1020070063177A KR20070063177A KR20080114029A KR 20080114029 A KR20080114029 A KR 20080114029A KR 1020070063177 A KR1020070063177 A KR 1020070063177A KR 20070063177 A KR20070063177 A KR 20070063177A KR 20080114029 A KR20080114029 A KR 20080114029A
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KR
South Korea
Prior art keywords
repair
fuse
semiconductor device
insulating film
insulating layer
Prior art date
Application number
KR1020070063177A
Other languages
Korean (ko)
Inventor
김대영
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070063177A priority Critical patent/KR20080114029A/en
Publication of KR20080114029A publication Critical patent/KR20080114029A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

In accordance with another aspect of the present invention, a method of repairing a semiconductor device may include forming a first insulating layer on a semiconductor substrate on which a plurality of fuses are formed; Etching the first insulating layer to form a repair trench; Irradiating a primary laser to a fuse to be cut out of a plurality of fuses under the repair trench; Forming a second insulating film on a surface of the repaired trench, to which the laser is first irradiated; And irradiating a secondary laser to the fuse to be cut.

Description

Repair method of semiconductor device {METHOD FOR REPAIR OF SEMICONDUCTOR DEVICE}

1 is a cross-sectional view of a semiconductor device for explaining the conventional problem.

2A through 2E are cross-sectional views of processes for describing a method of repairing a semiconductor device, according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100, 200: semiconductor substrate 110, 210: interlayer insulating film

120, 220: fuse 130, 230: first insulating film

140, 240: protective film T: trench for repair

250: second insulating film

The present invention relates to a repair method of a semiconductor device, and more particularly, to a repair method of a semiconductor device that can improve the repair efficiency and improve the manufacturing yield and reliability of the device.

In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device is required to have a large storage capacity while operating at high speed. Accordingly, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, and response speed.

A semiconductor device mainly includes a fabrication (FAB) process of repeatedly forming a circuit pattern set on a silicon substrate to form cells having an integrated circuit, and packaging the substrate on which the cells are formed in a chip unit (Chip). Packaging and assembly process. In addition, a process for inspecting electrical characteristics of cells formed on the substrate is performed between the fabrication process and the assembly process.

The inspection step is a step of determining whether the cells formed on the substrate have an electrically good state or a bad state. This is to reduce the effort and cost consumed in the assembly process by removing the cells having a bad state through the inspection process before performing the assembly process. In order to detect the cells having the defective state at an early stage and regenerate them through a repair process.

Here, the repair process will be described in more detail as follows.

Redundancy cells are added to replace defective devices or circuits in the design of devices for the purpose of improving the yield of devices in the event of defects in the semiconductor device manufacturing process, and to connect these redundant cells to integrated circuits. The fuse is designed together, and the repair process is a process in which a cell, which has been found to be defective through an inspection process, is connected to a spare cell embedded in a chip using the fuse to be regenerated. That is, by cutting only specific fuses, location information of cells to be repaired is generated.

Hereinafter, a repair method of a semiconductor device according to the prior art will be briefly described.

First, an interlayer insulating film having a flattened surface is deposited on a fuse area of a semiconductor substrate, and then a plurality of fuses are formed on the interlayer insulating film. Then, an insulating film and a protective film are sequentially deposited on the resultant of the semiconductor substrate so as to cover the fuses. Subsequently, a partial thickness of the passivation layer and the insulating layer is etched to form a repair trench for leaving an insulating layer having a predetermined thickness on the fuse formed in the blowing region.

Then, a known inspection and repair process including a fuse blowing process of cutting a specific fuse by irradiating a laser to a fuse region of the semiconductor substrate on which the repair trench is formed is sequentially performed.

However, in the above-described prior art, a repair failure occurs in which the fuse is not completely cut during the fuse blowing process.

1 is a cross-sectional view of a semiconductor device for explaining the above-described conventional problem.

As shown in the drawing, during a blowing process for cutting a specific fuse 120 among the fuses 120 formed on the semiconductor substrate 100, a repair in which the fuse 120 to be cut, as shown in the portion A, is not repaired properly and remains Defect occurs.

This repair failure is caused when the thickness of the insulating film 130 remaining on the fuse 120 is not uniform or when the condition of the laser irradiated during the blowing process is not appropriate, and as a result, the repair efficiency is reduced and the device is reduced. The manufacturing yield and reliability of the fall.

Herein, reference numeral 110 in FIG. 1 denotes an interlayer insulating film, 140 denotes a protective film, and T denotes a repair trench.

The present invention provides a repair method of a semiconductor device capable of improving the repair efficiency.

In addition, the present invention provides a method for repairing a semiconductor device capable of improving manufacturing yield and reliability.

In an embodiment, a repair method of a semiconductor device may include forming a first insulating layer on a semiconductor substrate on which a plurality of fuses are formed; Etching the first insulating layer to form a repair trench; Irradiating a primary laser to a fuse to be cut out of a plurality of fuses under the repair trench; Forming a second insulating film on a surface of the repaired trench, to which the laser is first irradiated; And irradiating a secondary laser to the fuse to be cut.

The method may further include forming a protective film on the first insulating film after the forming of the first insulating film and before forming the repair trench.

The second insulating layer is formed of the same material as the first insulating layer.

The second insulating film is formed of an oxide film.

The oxide film is formed of any one of a high density plasma (HDP), a tetra ethyl ortho silicate (TEOS), and a spin-on glass (SOG) film.

The second insulating film is formed to a thickness of 100 to 1000 GPa.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In the present invention, in performing a fuse blowing process for cutting a specific fuse, the insulating film is etched to form a repair trench, the laser is first irradiated, and then the insulating film is again deposited on the repair trench. The laser is irradiated secondly.

In this case, even if the fuse is not cut properly because the thickness of the insulating layer is thick or the laser irradiation conditions are not properly cut during the primary laser irradiation, the desired fuse can be completely cut through the secondary laser irradiation, thereby improving the repair efficiency. can do. Therefore, the present invention can improve the manufacturing yield and reliability of the device.

2A through 2E are cross-sectional views of processes for describing a method of repairing a semiconductor device, according to an embodiment of the present invention.

Referring to FIG. 2A, predetermined lower structures (not shown) including gates are formed in the cell region of the semiconductor substrate 200 partitioned into a cell region (not shown) and a fuse region. Then, after the interlayer insulating film 210 is deposited on each region to cover the lower structures, the surface of the interlayer insulating film 210 is CMP.

Subsequently, a fuse conductive film (not shown) is deposited on the interlayer insulating film 210, and the fuse conductive film is patterned to form a plurality of fuses 220 spaced apart from each other. Subsequently, a first insulating layer 230 of an oxide material is deposited on the interlayer insulating layer 210 on which the plurality of fuses 220 are formed to have a thickness sufficient to cover the fuses 220, and then the first insulating layer 230 is formed. CMP. Then, a passivation layer 240 is formed on the first insulating layer 230.

Referring to FIG. 2B, a first mask pattern (not shown) for exposing a fuse box region is formed on the passivation layer 240, and then exposed by the first mask pattern through a known photo process. A partial thickness of the passivation layer 240 and the first insulating layer 230 is etched to form a repair trench T. Then, the first mask pattern is removed.

Referring to FIG. 2C, a fuse blowing process for cutting a specific fuse 220 among the fuses 220 is performed. The fuse blowing process is performed by performing a first laser irradiation on the resultant of the semiconductor substrate 200 in which the repair trench T is formed.

At this time, when the thickness of the first insulating layer 230 on the upper part of the fuse 220 is too thick or the laser irradiation condition is not appropriate during the primary laser irradiation, the desired fuse 220 as shown in part A is Some residual phenomena may occur without being completely cut, which causes a repair fail.

Referring to FIG. 2D, the second insulating layer 250 may be formed on the fuse 220, the first insulating layer 230, and the passivation layer 240, which are not completely cut during the first laser irradiation. To form. The second insulating film 250 is preferably formed of the same material as the first insulating film 230, that is, an oxide film, and the oxide film may be formed of HDP, High Ethyl Plasma, TEOS, and Tetra Ethyl Ortho Silicate. It is formed through any one method of spin-on glass (SOG).

Referring to FIG. 2E, the second laser irradiation is performed on the semiconductor substrate 200 on which the second insulating layer 250 is formed. Through the secondary laser irradiation, as shown in the portion B, it is possible to completely cut the fuse that has not been completely cut by the primary laser irradiation, thereby improving the repair efficiency.

Thereafter, although not shown, a well-known inspection and repair process is performed in sequence.

In the present invention described above, after the laser is irradiated firstly in the fuse blowing step of cutting a specific fuse, the insulating film is deposited again, and then the laser is irradiated secondly, so that a repair fail is generated in which the desired fuse is not completely cut. You can prevent it.

That is, even if the thickness of the insulating film remaining on the upper portion of the fuse during the first laser irradiation or the fuse is not completely cut due to inappropriate laser irradiation conditions, the desired fuse may be completely cut through the second laser irradiation. It is possible to prevent the repair failure from occurring.

Therefore, the present invention can improve repair efficiency and effectively improve device characteristics and manufacturing yield.

As mentioned above, although the present invention has been illustrated and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. It can be easily understood by those skilled in the art that can be modified and modified.

As described above, according to the present invention, by performing laser irradiation twice in a fuse blowing process for cutting a specific fuse, it is possible to prevent a repair failure in which the desired fuse is not completely cut.

Therefore, the present invention can improve the repair efficiency to improve device characteristics and manufacturing yield.

Claims (6)

Forming a first insulating layer on a semiconductor substrate on which a plurality of fuses are formed; Etching the first insulating layer to form a repair trench; Irradiating a primary laser to a fuse to be cut out of a plurality of fuses under the repair trench; Forming a second insulating film on a surface of the repaired trench, to which the laser is first irradiated; And Irradiating a secondary laser on the fuse to be cut; Repair method of a semiconductor device comprising a. The method of claim 1, After the forming of the first insulating film, and before the forming of the repair trench, Forming a protective film on the first insulating film; Repair method for a semiconductor device further comprising. The method of claim 1, The second insulating layer may be formed of the same material as the first insulating layer. The method of claim 3, wherein The second insulating film is a repair method of a semiconductor device, characterized in that formed by an oxide film. The method of claim 4, wherein The oxide film may be formed of any one of a high density plasma (HDP), tetra ethyl ortho silicate (TEOS), and spin-on glass (SOG) film. The method of claim 1, The second insulating film is formed in a thickness of 100 to 1000 GPa repair method of a semiconductor device.
KR1020070063177A 2007-06-26 2007-06-26 Method for repair of semiconductor device KR20080114029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070063177A KR20080114029A (en) 2007-06-26 2007-06-26 Method for repair of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070063177A KR20080114029A (en) 2007-06-26 2007-06-26 Method for repair of semiconductor device

Publications (1)

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KR20080114029A true KR20080114029A (en) 2008-12-31

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KR1020070063177A KR20080114029A (en) 2007-06-26 2007-06-26 Method for repair of semiconductor device

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