KR20080099914A - Apparatus and method for removing photoreist - Google Patents

Apparatus and method for removing photoreist Download PDF

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Publication number
KR20080099914A
KR20080099914A KR1020070045794A KR20070045794A KR20080099914A KR 20080099914 A KR20080099914 A KR 20080099914A KR 1020070045794 A KR1020070045794 A KR 1020070045794A KR 20070045794 A KR20070045794 A KR 20070045794A KR 20080099914 A KR20080099914 A KR 20080099914A
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KR
South Korea
Prior art keywords
resist pattern
substrate
cleaning
resist
ultraviolet irradiation
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Application number
KR1020070045794A
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Korean (ko)
Inventor
이동욱
Original Assignee
주식회사 하이닉스반도체
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Priority to KR1020070045794A priority Critical patent/KR20080099914A/en
Publication of KR20080099914A publication Critical patent/KR20080099914A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

After loading the substrate having the etching target film pattern and the resist pattern into the apparatus including the ultraviolet irradiation part and the cleaning part, decomposing the resist pattern with ultraviolet light to remove the resist pattern, and cleaning the substrate from which the resist pattern has been removed. Suggest removal instructions.

Description

Apparatus and Method for removing photoreist

1 is a view schematically showing a resist removal apparatus according to the present invention.

2 is a view schematically showing the ultraviolet irradiation unit of FIG.

3 is a view schematically illustrating the cleaning part of FIG. 1.

4 to 6 are cross-sectional views illustrating the resist removal method according to the present invention.

TECHNICAL FIELD The present invention relates to a device and a manufacturing method of a semiconductor device, and more particularly, to a resist removing device and a removal method.

Photolithography is used as a method for implementing a pattern to be formed in a semiconductor device. In the photolithography process, an etching target film and a resist film are coated on a substrate, and then a resist pattern is formed through an exposure and development process. The etching target layer is etched using the resist pattern as an etching mask, and then the resist pattern is removed.

The removal of the resist is carried out, for example, by using an oxygen plasma or by performing a separate strip process using a wet chemical. In addition, a cleaning process using a Sulfuric Acid Peroxide Mixture (SPM) or Ammonia Peroxide Mixture (APM) solution is essentially performed to clean resist residues and contaminants after a separate strip process.

Since the resist removal and cleaning process is carried out separately through each dedicated equipment, there is a need for equipment and equipment management for this purpose, and the manufacturing process is complicated and the process time is long. Accordingly, studies have been made to unify the resist removal and cleaning processes.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a resist removal method capable of unifying resist removal and cleaning processes.

In order to achieve the above technical problem, the resist removal method according to the present invention comprises the steps of: loading the substrate on which the etching target film pattern and the resist pattern is formed into a device having an ultraviolet irradiation unit and a cleaning unit; Decomposing and removing the resist pattern into ultraviolet light; And cleaning the substrate from which the resist pattern has been removed.

The ultraviolet light is preferably used as excimer light having a wavelength of 172 nm.

Removing the resist pattern is preferably performed by supplying oxygen gas and nitrogen gas.

The cleaning of the substrate is preferably carried out by supplying ozone water of approximately 40 ~ 50 ℃.

The ozone water is preferably performed so as not to exceed 50 ppm.

After cleaning the substrate, the method may further include rinsing the substrate with ultrapure water including carbon dioxide.

In order to achieve the above another technical problem, the resist removing apparatus according to the present invention, the ultraviolet irradiation unit is made to remove the resist pattern by ultraviolet light; And a cleaning unit disposed adjacent to the ultraviolet irradiation unit and performing a cleaning process on the substrate from which the resist pattern is removed.

The ultraviolet irradiation part may include a reaction chamber having a space from which a resist pattern is removed; A stage disposed on a bottom surface of the reaction chamber and on which a substrate on which a resist pattern is formed is mounted; A plurality of ultraviolet light lamps installed above the reaction chamber so as to correspond to the stage at a predetermined interval; And an exhaust pipe for supplying a reaction gas into the reaction chamber.

The ultraviolet light lamp is preferably formed of excimer light having a wavelength of 193 nm.

The cleaning unit may include a rotating chuck disposed to rotate in the cleaning unit and to which the substrate on which the resist pattern is removed is mounted; And a nozzle for supplying a cleaning liquid to the substrate from which the resist pattern has been removed.

The apparatus may further include a moving unit disposed between the ultraviolet irradiation unit and the cleaning unit to move the substrate from the ultraviolet irradiation unit to the cleaning unit.

According to the present invention, a resist removal apparatus and a resist removal method for decomposing and removing a resist pattern into ultraviolet light and performing a cleaning process using ozone water in a resist removal apparatus having an ultraviolet irradiation section and a cleaning section are provided.

Accordingly, the yield of the device can be improved by removing and cleaning the resist pattern in a single device, thereby reducing the cost and processing time.

1 is a view schematically showing a resist removal apparatus according to the present invention.

Referring to FIG. 1, the resist removing apparatus 100 according to the present invention includes an ultraviolet irradiation part 110 and a cleaning part 120. In this case, a moving part 130 serving as a moving path of the substrate may be further provided between the ultraviolet irradiation part 110 and the cleaning part 120.

The resist removal apparatus 100 may be used to remove the resist pattern after performing an etching process or an ion implantation process using the resist pattern.

The ultraviolet irradiation part 110 removes the resist pattern, and the cleaning part 120 performs the cleaning process of the substrate from which the resist pattern is removed. The moving unit 130 decomposes and removes the resist pattern from the ultraviolet irradiation unit 110, and then moves the substrate from which the resist pattern has been removed into the cleaning unit 120.

FIG. 2 is a view schematically showing an ultraviolet irradiation part of FIG. 1, and FIG. 3 is a view schematically showing a cleaning part of FIG. 1.

Referring to FIG. 2, the ultraviolet irradiation part (110 of FIG. 1) is disposed on the reaction chamber 300 where the resist pattern removing process is performed, and on the bottom surface of the reaction chamber 300, and the stage 310 on which the substrate is mounted. And an ultraviolet light lamp 320 disposed on the upper side of the reaction chamber 300 so as to correspond to the stage at a predetermined interval, and an exhaust pipe 330 for supplying or exhausting the reaction gas into the reaction chamber. . Also, as shown, a glass substrate 340 made of quartz may be disposed between the ultraviolet light lamp and the stage.

The stage 310 serves to mount and fix the substrate 200 on which the photoresist 220 pattern and the target layer 210 pattern are formed in the reaction chamber 300. The plurality of ultraviolet light lamps 320 serves to decompose the resist pattern by irradiating the photoresist 220 pattern placed on the stage 310 with ultraviolet light. In this case, the ultraviolet light may be used as excimer light having a wavelength of 173 nm.

In addition, the distance between the glass substrate 340, the substrate 200 on which the photoresist 220 pattern and the target layer 210 pattern are formed, and the glass substrate 340 and the ultraviolet light lamp 320 is maintained at about 4 to 6 nm. desirable.

The exhaust pipe 330 serves to supply the reaction promoting gas and the carrier gas into the reaction chamber 300 or to allow the reaction by-products generated in the reaction chamber 300 to exit.

Referring to FIG. 3, the cleaning unit 120 (in FIG. 1) may include a cleaning solution on a rotating chuck 400 on which the substrate 200 from which the resist pattern has been removed is mounted, and the substrate 200 from which the resist pattern is removed. It comprises a nozzle 410 for supplying.

The rotary chuck 400 mounts the substrate moved from the ultraviolet irradiator to the cleaning unit, and rotates the substrate 200 when the cleaning is performed. The nozzle 410 sprays the cleaning liquid onto the central portion of the rotating substrate. At this time, ozone water may be used as the cleaning liquid.

On the other hand, the distance between the substrate from which the resist pattern is removed and the nozzle may be approximately 20 mn away.

The resist removal method using the resist removal apparatus of such a structure is as follows. In the embodiment of the present invention, the photomask is described by way of example, but it can be applied to all cases where the resist is removed and the cleaning process of the semiconductor substrate is performed.

4 to 6 are cross-sectional views illustrating the resist removal method according to the present invention.

Referring to FIG. 4, a light blocking layer pattern 210 and a resist pattern 220 are formed on a transparent substrate 200 such as quartz. Specifically, after the light blocking film and the photoresist film are formed on the transparent substrate 200, the photoresist 220 pattern is formed by performing an exposure process and a developing process on the photoresist film. Next, the light blocking film is etched using the resist pattern 220 as an etching mask to form the light blocking film pattern 210.

The light blocking film is formed of a material capable of blocking transmitted light, such as a chromium film. The photoresist film may be formed of, for example, a chemical amplified resist film or an electron beam resist film.

Referring to FIG. 5, the transparent substrate on which the light blocking film pattern 210 and the resist pattern 220 are formed is loaded into the reaction chamber 300 of the ultraviolet irradiation part shown in FIG. 2. Then, the transparent substrate 200 having the light blocking layer pattern 210 and the resist pattern 220 is mounted on the stage 310 disposed on the bottom surface of the reaction chamber 300.

Next, the ultraviolet light lamp 320 in the reaction chamber 300 is irradiated with ultraviolet light to the resist pattern 220 for a predetermined time. At this time, the reaction promoting gas and the carrier gas are supplied through the exhaust pipe 330 in the reaction chamber 300. As the ultraviolet light lamp, excimer light having a wavelength of about 172 nm may be used. The reaction gas may supply about 0.5 l / m of oxygen gas, and the carrier gas may supply about 0.2 l / m of nitrogen gas.

When the ultraviolet light is irradiated onto the resist pattern 220, the constituent material C x H y O z constituting the resist pattern 220 is decomposed into C, H, and O. Then, combined with the active oxygen in the reaction chamber 300 to generate a reactant, such as CO 2 , H 2 O, these reactants with the carrier gas is discharged to the outside through the exhaust pipe 320 in the reaction chamber 300 As a result, the resist pattern 220 is removed.

At this time, the decomposition of the resist pattern with ultraviolet light having a wavelength of 172nm may be decomposed at a rate of approximately 10nm / min. For example, when the resist pattern is formed to a thickness of about 200 nm, it may take about 20 minutes to decompose and remove the resist pattern with ultraviolet light.

Referring to FIG. 6, when the resist pattern (220 of FIG. 5) is removed from the ultraviolet irradiation part of FIG. 2, the substrate on which the resist pattern has been removed through the moving part (130 of FIG. 1) in the resist removing apparatus is cleaned (FIG. Is moved to 120). Then, the substrate 200 from which the resist pattern is removed is mounted on the rotary chuck 400 of FIG. 3.

Next, ozone water is supplied through the nozzle 410 of FIG. 3 disposed in the cleaning unit 120. Then, while the transparent substrate 200 from which the resist pattern is removed by the rotating chuck 400 is rotated, ozone water is injected into the center of the rotating transparent substrate 200. Accordingly, the cleaning effect is uniformly made over the entire surface of the transparent substrate 200.

Ozone water is a mixed solution of ozone and deionized water and can be formed so that the concentration of ozone water does not exceed approximately 50 ppm. In this case, the number of spins of the rotary chuck 400 may be set not to exceed approximately 100 rpm. At this time, it is preferable to supply, maintaining ozone water about 10-50 degreeC, and not to wash | clean for 5 minutes.

Next, the transparent substrate 200 subjected to the cleaning process is rinsed using ultrapure water. The rinsing process is performed in the washing unit 120 in which the washing process is performed. When rinsing, the number of spins of the rotary chuck can be set at about 100 to 300 rpm. At this time, it may be rinsed while applying ultrasonic vibrations of 1 MHz and 3 MHz. When ultrasonic vibration is applied, contaminants may be prevented from reattaching to the transparent substrate 200 from which the resist pattern is removed again by the vibration effect. At this time, it may be rinsed using ultrapure water containing carbon dioxide.

After rinsing, a drying process is performed. The drying process may be performed by rotating the rotary chuck at approximately 1400 to 1600 rpm for 50 to 60 seconds to dry.

Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made by those skilled in the art within the technical spirit of the present invention. .

As described so far, according to the resist removing device and the resist removing method of the present invention, a resist pattern is decomposed to ultraviolet light and removed in a single device including an ultraviolet irradiation part and a cleaning part, and a cleaning process is performed using ozone water. Can be.

Accordingly, it is possible to reduce the generation of organic contaminants in removing the resist used in the related art, and to omit the cleaning process using the SPM or APM solution. In addition, since the resist removal and cleaning process are performed in a single device, the yield of the device can be improved by reducing costs and shortening the processing time.

Claims (11)

Loading the substrate on which the etching target layer pattern and the resist pattern are formed into a device having an ultraviolet irradiation part and a cleaning part; Decomposing and removing the resist pattern into ultraviolet light; And And cleaning the substrate from which the resist pattern has been removed. The method of claim 1, The ultraviolet light is a resist removal method using the excimer light of 172nm wavelength. The method of claim 1, The removing of the resist pattern is performed by supplying oxygen gas and nitrogen gas. The method of claim 1, Cleaning the substrate is performed by supplying ozone water at approximately 40-50 ° C .; The method of claim 4, wherein The ozone water is a resist removal method performed so as not to exceed 50ppm. The method of claim 1, After cleaning the substrate, And rinsing the substrate with ultrapure water containing carbon dioxide. An ultraviolet irradiation part in which the resist pattern is removed by ultraviolet light; And A resist removal device disposed adjacent to the ultraviolet irradiation part and including a cleaning part performing a cleaning process on the substrate from which the resist pattern has been removed; The method of claim 7, wherein The ultraviolet irradiation unit, A reaction chamber having a space from which a resist pattern is removed; A stage disposed on a bottom surface of the reaction chamber and on which a substrate on which a resist pattern is formed is mounted; A plurality of ultraviolet light lamps installed above the reaction chamber so as to correspond to the stage at a predetermined interval; And And an exhaust pipe for supplying a reaction gas into the reaction chamber. The method of claim 8, And the ultraviolet light lamp is formed of excimer light having a wavelength of 193 nm. The method of claim 7, wherein The cleaning unit, A rotary chuck disposed to rotate in the cleaning unit and to which the substrate on which the resist pattern has been removed is mounted; And And a nozzle for supplying a cleaning liquid to the substrate from which the resist pattern has been removed. The method of claim 7, wherein And a moving unit disposed between the ultraviolet irradiation unit and the cleaning unit to move the substrate from the ultraviolet irradiation unit to the cleaning unit.
KR1020070045794A 2007-05-11 2007-05-11 Apparatus and method for removing photoreist KR20080099914A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101571089B1 (en) * 2015-05-28 2016-07-20 주식회사 엘피케이 Removing system for photoresist film
KR102115359B1 (en) 2018-12-14 2020-05-27 세메스 주식회사 Apparatus and method for cleaning substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101571089B1 (en) * 2015-05-28 2016-07-20 주식회사 엘피케이 Removing system for photoresist film
KR102115359B1 (en) 2018-12-14 2020-05-27 세메스 주식회사 Apparatus and method for cleaning substrate

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