KR20080099546A - Manufacturing method of nano-structures using miscut substrates - Google Patents

Abstract

A manufacturing method of a nanostructure using a miscut substrate is provided to grow the nanostructure at a terrace of the miscut substrate by mis-cutting a form of a substrate installed at a substrate holder of the nanostructure manufacturing device to one-direction or bi-direction and using a nanostructure using the miscut substrate, to arrange the nanostructure, to control a density, to arrange the nanostructure growing in an upper part of the substrate and to reduce a manufacturing cost without a patterning process of using a dielectric. A substrate in which a nanostructure(A) is grown is manufactured by using a miscut substrate(170a) in order to grow up terraces which have a plurality of flat parts. The nanostructure is a GaN nanostructure.

Description

Manufacturing Method of Nano-Structures Using Miscut Substrates

1 is a view showing an embodiment of a nanostructure manufacturing apparatus using the HVPE method.

2 is a view showing a state in which a nanostructure is formed on a substrate cut in one direction according to the present invention.

Figure 3 is a view showing a state in which the nanostructure is formed on the substrate cut in both directions in accordance with the present invention.

<Description of the symbols for the main parts of the drawings>

100: reactor 110: first gas injection pipe

120: second gas injection pipe 130: container

140: substrate holder 150: exhaust port

160: electric furnace 170: substrate

170a: bidirectional miscut substrate 170b: bidirectional miscut substrate

A: Nanostructure

The present invention relates to a method for manufacturing a nanostructure that can control the alignment and density using a substrate miscut in a multi-layer, in particular, the nano-structure in the terrace (terrace) portion of the flat portion of the multi-layer miscut substrate Because they grow well, the substrate is formed by miscuting so as to control density and alignment on one substrate, and the substrate is installed in a nanostructure manufacturing apparatus using HVPE method to be aligned in a desired direction and formed to have a desired density. It provides a method for producing a nanostructure.

One-dimensional nanostructures such as nanorods and nanowires made of compound semiconductors have great applicability as nanoscale home appliances or electronic devices. Among them, gallium nitride-based semiconductor materials are attracting great attention as optical device materials that can emit light from the UV to the blue region because they have a very large direct transition energy band gap, and they are epitaxy. It grows in form and is used.

Representative methods for growing semiconductor materials in epitaxy form as described above include metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydride vapor phase epi. The Hydride Vapor Phase Epitaxy (HVPE) method is used.

The MOCVD or MBE method has a very advantageous advantage in growing a high quality semiconductor epitaxy, but has a disadvantage in that the cost of manufacturing the semiconductor material is not only high but also the growth speed of the semiconductor material is slow.

In addition, the HVPE method is relatively inferior in the characteristics of epitaxial grown film, but it is possible to manufacture a semiconductor material at a low price. It is advantageous for the production of thick films.

Unlike silicon, the gallium nitride thick film does not use the same material (gallium nitride) substrate in the form of a wafer because it is difficult to grow a single crystal, and sapphire substrate is mainly used. When the compound semiconductor is grown on the heterogeneous substrate as described above, since a large number of dislocations are generated due to lattice constant mismatch, there is a problem in that the optical performance is lowered compared to the light emitting diode using the nanostructure of the compound semiconductor having no potential. .

Therefore, in order to reduce the lattice constant mismatch of one-dimensional nanostructures and to use them as nanodevices, it is important to align the nanostructures grown on the dissimilar substrate and to control the density. After the pattern was formed, the alignment and density of the nanostructures were controlled by growing the nanostructures only on the patterns using a MOCVD method, an MBE method, or an HVPE method that grows a semiconductor material in the form of epitaxy.

However, when adding a process of forming a pattern on the substrate as described above, there is a problem that the process for adjusting the alignment and density of the nanostructure is complicated, and the cost of adding the patterning process is consumed.

In order to solve the above problems, the present invention is to align the nanostructures to be grown on the terrace portion of the miscut substrate by using a miscut in one or two directions of the substrate installed in the substrate holder of the nanostructure manufacturing apparatus And to provide a method for producing a nanostructure easy to control the density.

In addition, in order to align the nanostructures growing on the substrate and control the density, the conventional patterning process using a dielectric is not used, thereby simplifying the manufacturing process of the nanostructures, thereby reducing manufacturing costs and improving the performance of nanodevices. Being able to implement it has another purpose.

In order to achieve the above object, the present invention, in the method for producing a compound nanostructure, the substrate on which the nanostructure is grown miscut substrate, characterized in that to use a miscut substrate having a plurality of flat portion terraces It provides a method for producing a nanostructure used.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 shows an embodiment of an apparatus for manufacturing a gallium nitride nanostructure in a general compound semiconductor by the HVPE method, in which an inert gas such as a halide gas is injected into a reactor 100 maintained in a vacuum state. The first gas injection pipe 110 to be formed, and the second gas injection pipe 120 is injected into the gas containing a V-group element, such as NH ₃ is formed, the Ga in the middle of the first gas injection pipe 110 A vessel 130 for storing the III-groups of the back is installed, and the substrate 170 manufactured by sapphire or the like is placed on the substrate holder 140 inside the reactor 100. In this case, the miscut substrate has a stepped shape in one direction or in both directions, and indicates a substrate having a plurality of flat portions having a terrace.

The substrate 170 is a one-way miscut substrate 170a that is miscut to have a terrace, which is a flat portion for each step in a step shape in one direction, or each step in a bidirectional (two-dimensional) direction perpendicular to each other. A bicut (two-dimensional) miscut substrate 170b that is miscut to have a terrace that is a flat portion is used.

In addition, an exhaust port 150 for exhausting the reaction gases is formed at the other side, and an electric furnace 160 is installed at the outer wall of the reactor 100 to control the temperature of the reactor 100.

A method of aligning and growing a gallium nitride-based nanostructure on a miscut substrate using a nanostructure fabrication apparatus configured as described above and controlling density thereof, first, sapphire, SiC, Si, GaAs on the substrate holder 140 After installing the substrate 170 formed in the back and miscut in one direction or in both directions (two-dimensional), Ga is a group III element.

Then, the electric furnace is operated so that the temperature around the substrate inside the reactor is changed to NH ₃ , a gas containing a group V-element. The decomposition of the gas occurs well, and maintains a high reactivity with GaCl at a temperature of 700 ~ 1200 ℃, and the temperature of the substrate is maintained at 100 ~ 700 ℃ to grow nanostructures. At this time, the temperature of the substrate is preferably maintained at 300 ~ 700 ^° C, which is the growth temperature of the nanorods or nanowires, which is one of the nanostructures arranged on the top.

Next, the halide gas is injected through the first gas injection pipe 110 passing through the container 130 to react with Ga in the container to be injected into the upper portion of the substrate 170. Next, NH ₃ , which is a V-group element, is introduced through the second gas injection pipe 120 while the substrate is maintained at the above temperature.

As described above, the Ga element injected into the upper portion of the substrate through the first gas injection tube reacts with the V-group element injected through the second gas injection tube to grow a nanostructure having a group III-V molecular formula on the substrate.

2 to 3 illustrate embodiments of the nanostructure formed on the miscut substrate by using the nanostructure manufacturing apparatus, and FIG. 2 illustrates one direction of the flat terrace of each step in the miscut substrate 170a in one direction. 3 shows nanostructures two-dimensionally aligned in the flat terrace portion of each bidirectional step in the bidirectional (two-dimensional) miscut substrate 170b. That is, according to the miscut direction of the substrate and the width of the terrace, the nanostructures can be aligned in one direction or in two dimensions and the density can be adjusted.

While the present invention has been described with reference to the embodiments shown in the drawings, it is only for illustrating the invention, and those skilled in the art to which the present invention pertains various modifications or equivalents from the detailed description of the invention. It will be appreciated that one embodiment is possible. Therefore, the true scope of the present invention should be determined by the technical spirit of the claims.

As described above, according to the present invention, the nanostructure is grown on the terrace of the miscut substrate by controlling the alignment and the density by using a miscut in one direction or a bidirectional direction of the substrate installed in the substrate holder of the nanostructure manufacturing apparatus. It is easy.

In addition, in order to align the nanostructures growing on the substrate and to control the density, a conventional patterning process using a dielectric is not used to simplify the manufacturing process of the nanostructures, thereby reducing manufacturing costs and improving the performance of nanodevices. Can be implemented.

Claims (6)

In the method for producing a compound nanostructure, The substrate on which the nanostructures grow is a method of manufacturing a nanostructure using a miscut substrate, characterized in that for using a miscut substrate having a plurality of flat portion terraces The method of claim 1, The nanostructure is a nanostructure manufacturing method using a miscut substrate, characterized in that the gallium nitride nanostructures. The method according to claim 1 or 2, The nanostructure is a nanostructure manufacturing method using a miscut substrate, characterized in that the nanorods or nanowires. The method of claim 1, The miscut substrate is a nanostructure manufacturing method using a miscut substrate, characterized in that for using a miscut substrate in one direction to have a stepped shape. The method of claim 1, The miscut substrate is a nanostructure manufacturing method using a miscut substrate, characterized in that for use in the bi-directional (two-dimensional) step-shaped miscut substrate. The method according to any one of claims 2, 4 or 5, The substrate is a nanostructure manufacturing method using a miscut substrate, characterized in that any one of sapphire, SiC, Si, GaAs.

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