KR20090030651A - A gallium nitride based light emitting device - Google Patents

A gallium nitride based light emitting device Download PDF

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KR20090030651A
KR20090030651A KR1020070096080A KR20070096080A KR20090030651A KR 20090030651 A KR20090030651 A KR 20090030651A KR 1020070096080 A KR1020070096080 A KR 1020070096080A KR 20070096080 A KR20070096080 A KR 20070096080A KR 20090030651 A KR20090030651 A KR 20090030651A
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gallium nitride
alsin
buffer layer
emitting device
light emitting
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KR1020070096080A
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Korean (ko)
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최재빈
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서울옵토디바이스주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/0254—Nitrides

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Abstract

A gallium-nitride-based light emitting device is provided to grow the gallium nitride film of the high quality by using the AlSiN buffer instead of the existing (Al,In,Ga) N buffer layer. The gallium nitride film comprises the AlSiN buffer layer(2-2) formed in the substrate(2-1), and the upper part of substrate and the gallium nitride film(2-3) formed on the AlSiN buffer layer. The growth process of the nitride semiconductor light-emitting device is The MOCVD(metal organic chemical vapor deposition), and the MBE(Molecular Beam Epitaxy) and the HVPE(Hydride Vapor Phase Epitaxy) etc. The substrate is one or more substrate among the homogeneous substrate of the sapphire(Al2O3), silicon carbide(SiC), silicon(Si), gallium arsenide(GaAs) etc or the heterogeneous substrate like GaN.

Description

질화갈륨계 발광소자{A gallium nitride based light emitting device}A gallium nitride based light emitting device

본 발명은 고품위의 질화물계 발광소자에 관한 것으로, 보다 상세하게는 AlSiN 버퍼층을 이용한 고품질의 질화갈륨계 발광소자에 관한 것이다.The present invention relates to a high quality nitride based light emitting device, and more particularly to a high quality gallium nitride based light emitting device using an AlSiN buffer layer.

질화갈륨 계열의 박막을 성장하기 위해서는 일반적으로 사파이어 기판들을 사용하게 되는데, 이들은 질화갈륨과 서로 다른 격자 상수와 열팽창 계수를 가지기 때문에 고품위의 질화갈륨막을 성장하기 어렵다. 이러한 어려움을 해결하기 위해서 일반적인 방법으로 낮은 성장온도에서 AlInGaN 막을 하나 또는 여러 가지의 조합으로 성장한 후에 온도를 높여서, 낮은 온도에서 성장된 AlInGaN 막을 씨앗층으로 이용하여 질화갈륨막을 성장하게 된다. 하지만 이러한 버퍼층을 사용한다 하더라도 10 8 ~10 10 /㎠ 정도의 결함 밀도(dislocation density)를 가지게 되는 문제점이 여전히 남아 있다. 또한, 성장도중에 텐사일 스트레인(tensile strain)을 받기 때문에 웨이퍼(wafer) 표면에 크랙(crack)을 형성하게 된다. 이러한 현상들은 곧바로 내정전압의 특성 저하뿐 아니라 내부양자효율(internal quantum efficiency)의 감소를 초래하게 된다.In order to grow gallium nitride-based thin films, sapphire substrates are generally used. Since gallium nitride has different lattice constants and thermal expansion coefficients, it is difficult to grow high quality gallium nitride films. In order to solve this difficulty, the AlInGaN film is grown in one or several combinations at a low growth temperature in a general manner, and then the temperature is increased to grow a gallium nitride film using the AlInGaN film grown at a low temperature as a seed layer. However, even when such a buffer layer is used, there is still a problem of having a dislocation density of about 10 8 to 10 10 / cm 2. In addition, cracks are formed on the wafer surface due to tensile strain during growth. These phenomena lead not only to the deterioration of the constant voltage but also to the reduction of the internal quantum efficiency.

본 발명은 기판위에 AlSiN 버퍼층을 이용해서 고품위의 질화갈륨계 박막을 형성하는 방법을 제공하는 것이다.The present invention provides a method of forming a high quality gallium nitride based thin film on an substrate using an AlSiN buffer layer.

본 발명의 구성은 기판위에 AlSiN 버퍼층을 성장한 후에 그 다음으로 질화갈륨계 박막이 성장되는 박막 구조에 관한 것이다.The configuration of the present invention relates to a thin film structure in which an AlSiN buffer layer is grown on a substrate, followed by a gallium nitride based thin film.

일반적으로, 질화갈륨막 성장을 위해서 사파이어(Al 2 O 3 ) 기판을 주로 사용하게 되는데, 질화갈륨막과는 서로 다른 격자 상수와 열팽창 계수를 가지고 있어서 고품질의 질화갈륨막을 형성하지 못하기 때문에, 질화갈륨막 내에는 10 8 ∼10 10 /㎠ 정도의 결함밀도(dislocation density)를 가지게 된다.In general, a sapphire (Al 2 O 3 ) substrate is mainly used for growing a gallium nitride film. Since the gallium nitride film has a different lattice constant and thermal expansion coefficient, it cannot form a high quality gallium nitride film, The gallium film has a dislocation density of about 10 8 to 10 10 / cm 2.

기판으로 이용되고 있는 사파이어는 부르자이트(wurtzite) 구조로 0.274nm의 격자상수를 가지며, 질화갈륨은 부르자이트(wurtzite) 구조로 0.3189nm의 격자상수를 가지고 있다. 또한 AlSiN는 동일한 부르자이트(wurtzite) 구조로 0.3105nm의 격자상수를 가지고 있다. 이러한 격자상수의 차이는 다음과 같이 표현될 수 있다. 사파이어와 질화갈륨의 격자부정합(lattice mismatch)은 약 14%에 비해 사파이어와 AlSiN의 격자부정합은 약 11%로 작은 값을 가지기 때문에, 고품질의 질화갈륨막을 형성함에 있어서 좋은 버퍼층으로 사용할 수 있다. Sapphire used as a substrate has a lattice constant of 0.274 nm in a wurtzite structure, and gallium nitride has a lattice constant of 0.3189 nm in a wurtzite structure. AlSiN has the same wurtzite structure and has a lattice constant of 0.3105 nm. This difference in the lattice constant can be expressed as follows. Since the lattice mismatch between sapphire and gallium nitride is about 11% and the lattice mismatch between sapphire and AlSiN is about 11%, the lattice mismatch can be used as a good buffer layer for forming a high quality gallium nitride film.

상술한 바와같이 본 발명에 의하면, 기존의 (Al,In,Ga)N 버퍼층과는 다른 AlSiN 버퍼층을 이용하여 질화갈륨막을 성장할 경우 고품위의 질화물계 발광소자 제작이 가능하다.As described above, when the gallium nitride film is grown using an AlSiN buffer layer different from the existing (Al, In, Ga) N buffer layer, a high quality nitride-based light emitting device can be manufactured.

이하, 첨부된 도면을 참조하여 본 발명을 보다 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described the present invention in more detail.

도 1은 본 발명의 실시형태에 따른 질화갈륨막의 단면도이다.1 is a cross-sectional view of a gallium nitride film according to an embodiment of the present invention.

도 1를 참조하면, 질화갈륨막은, 기판(2-1)상에 AlSiN 버퍼층(2-2)을 형성한 후에, 그 위에 형성되는 질화갈륨막(2-3)을 포함한다.Referring to Fig. 1, a gallium nitride film includes a gallium nitride film 2-3 formed thereon after forming an AlSiN buffer layer 2-2 on a substrate 2-1.

본 발명에 따른 질화물계 발광 소자의 제 1 실시예는 다음과 같다.A first embodiment of the nitride based light emitting device according to the present invention is as follows.

질화물계 발광소자의 성장 방법으로는 유기금속 화학 증착법(MOCVD; Metal Organic Chemical Vapor Deposition), 분자선 성장법(MBE; Molecular Beam Epitaxy) 및 수소화물 기상 성장법(HVPE; Hydride Vapor Phase Epitaxy)등을 포함한 다양한 방법을 사용할 수 있으며, 본 실시예에서는 유기금속 화학 증착법 (MOCVD)을 사용한다.Growth methods of nitride-based light emitting devices include metal organic chemical vapor deposition (MOCVD), molecular beam growth (MBE; Molecular Beam Epitaxy), and hydride vapor phase growth (HVPE). Various methods can be used, and the present embodiment uses organometallic chemical vapor deposition (MOCVD).

상기 기판은 질화물계 발광소자를 제작하기 위한 웨이퍼를 지칭하는 것으로 사파이어(Al2O3), 실리콘카바이드(SiC), 실리콘(Si), 갈륨아세나이드(GaAs) 등의 이종기판을 사용하거나, GaN와 같은 동종기판 중 적어도 하나의 기판을 사용한다. 본 실시 예에서는 사파이어로 구성된 결정 성장 기판을 사용한다.The substrate refers to a wafer for fabricating a nitride-based light emitting device, and uses a heterogeneous substrate such as sapphire (Al 2 O 3), silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), or the like. At least one of the substrates is used. In this embodiment, a crystal growth substrate made of sapphire is used.

상기 버퍼층으로 사용되는 AlSiN 버퍼층(2-2)을 형성시키기 위해서는, 알루미늄과 실리콘을 암모니아 분위기에서 MOCVD 반응기(reactor) 안에서 반응을 시켰으며, 알루미늄 재료로는 TMAl(트리메틸알루미늄)의 MO-소스(Source)가 사용되었으며, 실리콘 재료로는 SiH4, Si2H6의 불활성 기체나 DTBSi등의 MO-소스(Source)가 사용되었다. In order to form the AlSiN buffer layer 2-2 used as the buffer layer, aluminum and silicon were reacted in a MOCVD reactor in an ammonia atmosphere, and as an aluminum material, a MO-source of TMAl (trimethylaluminum) was used. ), And an inert gas of SiH 4 , Si 2 H 6 or MO-Source such as DTBSi was used as the silicon material.

다음으로, 상기 질화갈륨막을 성장하기 위해서는 암모니아 분위기에서 TMGa(트리메틸갈륨), TMIn(트리메틸인듐)등이 사용되었다.Next, in order to grow the gallium nitride film, TMGa (trimethylgallium), TMIn (trimethylindium) and the like were used in an ammonia atmosphere.

상기 기술적 과제들을 달성하기 위한 본 발명의 질화갈륨막의 형성방법은 일차적으로 사파이어 기판 상에 AlSiN 버퍼층을 형성하는 단계와 다음으로 상기 AlSiN 버퍼층 상에 고온에서 GaN 기반 질화막을 형성하는 단계를 구비하는 것을 특징으로 한다.A method of forming a gallium nitride film of the present invention for achieving the above technical problem is characterized in that it comprises the step of forming an AlSiN buffer layer on the sapphire substrate first and then forming a GaN-based nitride film on the AlSiN buffer layer at a high temperature It is done.

이 때, 상기 AlSiN 버퍼층은 400∼1000℃의 온도에서 성장하는 것이 바람직하며, 두께는 5Å∼5000Å인 것이 바람직하다. 한편, 상기 질화갈륨막은 900∼1200℃의 온도에서 성장하는 것이 바람직하다.At this time, the AlSiN buffer layer is preferably grown at a temperature of 400 ~ 1000 ℃, the thickness is preferably 5 ~ 5000Å. On the other hand, the gallium nitride film is preferably grown at a temperature of 900 ~ 1200 ℃.

이상으로, 본 발명에 대해서 바람직한 실시예를 통하여 상세히 설명 하였으나, 본 발명의 범위는 특정 실시예에 한정되는 것은 아니며, 첨부된 특허 청구범위에 의하여 해석되어야 할 것이다. 또한, 이 기술 분야에서 통상의 지식을 습득한 자라면, 본 발명의 범위에서 벗어나지 않으면서도 많은 수정과 변형이 가능함을 이해하여야 할 것이다.As described above, the present invention has been described in detail through preferred embodiments, but the scope of the present invention is not limited to the specific embodiments and should be interpreted by the appended claims. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

도 1은 본 발명의 실시형태에 따른 질화갈륨막의 단면도이다.1 is a cross-sectional view of a gallium nitride film according to an embodiment of the present invention.

<도면의 주요부분에 대한 부호설명><Code Description of Main Parts of Drawing>

2-1: 기판 2-1: Substrate

2-2: AlSiN 버퍼층2-2: AlSiN buffer layer

2-3: 질화갈륨계 박막 2-3: gallium nitride based thin film

Claims (12)

기판 상에 AlSiN 버퍼층을 형성하는 단계; 및Forming an AlSiN buffer layer on the substrate; And 상기 AlSiN 버퍼층 상에 질화물계 박막을 형성하는 단계;를 포함하는 질화갈륨계 발광소자 제조방법.Forming a nitride-based thin film on the AlSiN buffer layer; manufacturing method comprising a gallium nitride-based light emitting device. 제 1항에 있어서,The method of claim 1, 상기 AlSiN 버퍼층 형성시 알루미늄 전구체로 TMAl을 사용하는 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.Gallium nitride-based light emitting device manufacturing method characterized in that for forming the AlSiN buffer layer using the aluminum precursor TMAl. 제 1항에 있어서,The method of claim 1, 상기 AlSiN 버퍼층 형성시 실리콘 전구체로 SiH4, Si2H6의 불활성기체나, DTBSi의 MO-소스(Source)를 사용하는 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.A method of manufacturing a gallium nitride-based light emitting device, characterized in that an inert gas of SiH4, Si2H6, or MO-Source of DTBSi is used as a silicon precursor when the AlSiN buffer layer is formed. 제 1항에 있어서,The method of claim 1, 상기 AlSiN 버퍼층은 400-1000℃의 온도범위에서 성장되는 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.The AlSiN buffer layer is a method of manufacturing a gallium nitride-based light emitting device, characterized in that grown in the temperature range of 400-1000 ℃. 제 1항에 있어서,The method of claim 1, 상기 AlSiN 버퍼층의 두께는 5-5000Å인 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.The thickness of the AlSiN buffer layer is a manufacturing method of gallium nitride-based light emitting device, characterized in that 5-5000 5-. 제 1항에 있어서,The method of claim 1, 상기 AlSiN 버퍼층을 형성하는 단계 이후에 (Al,In,Ga)N층을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.And forming a (Al, In, Ga) N layer after the forming of the AlSiN buffer layer. 제 6항에 있어서,The method of claim 6, 상기 (Al,In,Ga)N층의 두께는 5-5000Å인 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.The gallium nitride-based light emitting device manufacturing method characterized in that the thickness of the (Al, In, Ga) N layer is 5-5000Å. 제 6항에 있어서,The method of claim 6, 상기 (Al,In,Ga)N층은 400~1000℃에서 성장되는 것을 특징으로 하는 질화갈륨계 발광소자 제조방법.The (Al, In, Ga) N layer is a method of manufacturing a gallium nitride-based light emitting device, characterized in that the growth at 400 ~ 1000 ℃. 기판;Board; 상기 기판 상에 형성된 AlSiN 버퍼층; 및An AlSiN buffer layer formed on the substrate; And 상기 AlSiN 버퍼층 상에 형성된 질화물계 박막;을 포함하는 질화갈륨계 발광소자.And a nitride based thin film formed on the AlSiN buffer layer. 제 9항에 있어서,The method of claim 9, 상기 AlSiN 버퍼층의 두께는 5-5000Å인 것을 특징으로 하는 질화갈륨계 발광소자.The gallium nitride-based light emitting device, characterized in that the AlSiN buffer layer has a thickness of 5-5000Å. 제 9항에 있어서,The method of claim 9, 상기 AlSiN 버퍼층 상에 (Al,In,Ga)N층이 추가로 형성됨을 특징으로 하는 질화갈륨계 발광소자.A gallium nitride-based light emitting device, characterized in that the (Al, In, Ga) N layer is further formed on the AlSiN buffer layer. 제 11항에 있어서,The method of claim 11, 상기 (Al,In,Ga)N층의 두께는 5-5000Å인 것을 특징으로 하는 질화갈륨계 발광소자.The gallium nitride-based light emitting device, characterized in that the (Al, In, Ga) N layer thickness is 5-5000 5-.
KR1020070096080A 2007-09-20 2007-09-20 A gallium nitride based light emitting device KR20090030651A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010151856A2 (en) * 2009-06-26 2010-12-29 Cornell University Chemical vapor deposition process for aluminum silicon nitride
CN104900773A (en) * 2015-04-15 2015-09-09 安徽三安光电有限公司 Nitride light-emitting diode structure and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010151856A2 (en) * 2009-06-26 2010-12-29 Cornell University Chemical vapor deposition process for aluminum silicon nitride
WO2010151856A3 (en) * 2009-06-26 2011-03-31 Cornell University Chemical vapor deposition process for aluminum silicon nitride
US8791034B2 (en) 2009-06-26 2014-07-29 Cornell University Chemical vapor deposition process for aluminum silicon nitride
CN104900773A (en) * 2015-04-15 2015-09-09 安徽三安光电有限公司 Nitride light-emitting diode structure and preparation method thereof

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