KR20080090025A - Method for adjusting temperature of substrate and substrate supporting member, substrate processing apparatus including the substrate supporting member - Google Patents

Abstract

A method for adjusting the temperature of a substrate, a substrate supporting member, and a substrate processing apparatus including the same are provided to provide a simplified structure, to perform clamping and cooling operations at the same time, and to control the temperature of the substrate precisely. A substrate supporting member includes a support plate(220) on which a substrate is layered; an electrothermal member(310) which is disposed on the support plate to adjust the temperature of the substrate on the support plate; a plurality of thermoelectric elements which are connected to the electrothermal member to adjust the temperature of the electrothermal member by using the first power(380) supplied from the outside; and a chucking electrode(420) which is disposed on the support plate to chuck the substrate on the support plate by using the second power(440) supplied from the outside.

Description

Method for adjusting temperature of substrate and substrate supporting member, substrate processing apparatus including the substrate supporting member}

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines.

2 is a schematic view showing a semiconductor manufacturing apparatus including a substrate processing apparatus according to the present invention.

3 is a diagram schematically illustrating the substrate processing apparatus of FIG. 2.

4 is a view showing the support plate of FIG.

5A and 5B are views illustrating how the temperature of the heat transfer member of FIG. 4 is adjusted using thermoelectric elements.

6A and 6B are views illustrating an operating state of the support member of FIG. 3.

7 is a flowchart illustrating a substrate processing method according to the present invention.

8 is a view illustrating a state in which the substrate processing apparatus of FIG. 3 operates.

<Description of Symbols for Main Parts of Drawings>

1: semiconductor manufacturing equipment 10: substrate processing apparatus (process chamber)

100: process chamber 200: support member

220: support plate 300: temperature control unit

310: heat transfer member 320: thermoelectric element

350: top plate 360: bottom plate

380: first power source 420: chucking electrode

440: second power supply 500: plasma generating member

600: gas supply member

The present invention relates to a method and a substrate support member for controlling the temperature of the substrate, and a substrate processing apparatus including the same, and more particularly, to a method and a substrate support member for controlling the temperature of the substrate using a thermoelectric element, and including the same It relates to a substrate processing apparatus.

The semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process. This deposition process has several important issues, which are important in evaluating the deposited films and selecting the deposition method.

One of the issues with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines a. 1A and 1B show an incomplete gap filling process. The gap between the metal lines a is filled with the insulating film b. At this time, while the insulating film b is filled in the gap, an overhang h grows in the form of breadloafing in the upper portion of the gap, and the growth rate of the overhang h is an insulating film filled in the gap. It is faster than the growth rate of b). As a result, the overhangs h meet with each other to close the top of the gap to form voids in the gap, preventing the insulating film b from being deposited in the gap. The formed voids result in high contact resistance and high sheet resistance, and also cause breakage. In addition, the voids may contain a treatment liquid or water, causing stability problems.

The High-Density Plasma Chemical Vapor Deposition (HDPCVD) method uses a deposition / etching / deposition method that deposits a film in a gap using plasma, etches overhang grown during deposition of the film, and then deposits the film again. To prevent the formation of voids. That is, the partially filled gap is reshaped to open the gap, and a film is deposited in the gap before voids are formed in the gap. This method can deposit a film without voids in a gap having a large Aspect Ratio (AR).

Such a plasma chemical vapor deposition apparatus has a chamber in which a deposition process is performed. The wafer is loaded inside the chamber, and a process gas is supplied to the top of the wafer. When the electromagnetic field is formed in the chamber while the process gas is supplied, plasma is generated from the process gas by the electromagnetic field. Outside the chamber is provided a coil to which a high frequency power is connected, and when a high frequency power is applied, the coil creates an electromagnetic field in the chamber.

On the other hand, the wafer is loaded on the upper surface of the support plate, and the wafer is fixed on the support plate by a separate clamping device (for example, a mechanical chuck using a mechanical structure, a vacuum chuck using a vacuum, or an electrostatic chuck). . In addition, the wafer is cooled by a separate cooling device (for example, helium gas injected on the back side of the wafer). However, in the case of installing such a clamping device and a cooling device, respectively, the structure of the support plate becomes very complicated, and it is also difficult to control each of them. In addition, manufacturing costs and footprint increase as the components increase. In addition, when the wafer is cooled using helium gas, it is difficult to precisely control the temperature of the wafer.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method and a substrate support member for adjusting the temperature of a substrate having a simple configuration, and a substrate processing apparatus including the same.

Another object of the present invention is to provide a method for controlling the temperature of a substrate that can simultaneously clamp and cool, a substrate support member, and a substrate processing apparatus including the same.

Still another object of the present invention is to provide a method of controlling a temperature of a substrate capable of precisely controlling the temperature of the substrate, a substrate support member, and a substrate processing apparatus including the same.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to the present invention, the substrate support member is a support plate on which the substrate is placed on an upper surface, a heat transfer member installed on the support plate and controlling the temperature of the substrate placed on the support plate, and connected to the heat transfer member from the outside. Chucking chucking the plurality of thermoelectric elements for adjusting the temperature of the heat transfer member by the first power source applied, and the substrate placed on the support plate by a second power source installed on the support plate and applied from the outside An electrode.

The heat transfer member may include a plurality of first heat transfer members disposed generally side by side, and second heat transfer members connecting the first heat transfer members adjacent to each other.

The chucking electrode may include a circular electrode disposed to be spaced apart from the center of the support plate, and a plurality of rod electrodes extending from the circular electrode toward the inside of the circular electrode, wherein the first heat transfer member and the rod electrode are alternately disposed. Can be arranged.

The heat transfer member may have a zigzag shape.

According to the present invention, a substrate processing apparatus includes a processing chamber providing an internal space in which a process is performed on a substrate, a substrate supporting member installed inside the processing chamber and supporting the substrate, and a gas supply member supplying a source gas into the processing chamber. And a plasma generating member for generating plasma from the source gas, wherein the substrate supporting member includes a support plate on which a substrate is placed on an upper surface thereof, a support plate on which the substrate is placed, and a temperature of the substrate placed on the support plate. A heat transfer member for controlling, a plurality of heat generators connected to the heat transfer member to adjust the temperature of the heat transfer member by a first power source applied from the outside, and a second power source installed on the support plate and applied from the outside; A chucking electrode for chucking the substrate placed on the support plate by It is.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to FIGS. 2 to 8. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

Hereinafter, the wafer W will be described as an example of the substrate, but the present invention is not limited thereto. In addition, hereinafter, a semiconductor manufacturing apparatus 1 having a substrate processing apparatus (or process chamber) 10 performing a deposition process will be described as an example. However, the spirit and scope of the present invention is not limited thereto, and the present invention may be applied to an ashing process, an etching process, or a cleaning process. In addition, hereinafter, an inductively coupled plasma (ICP) type plasma apparatus has been described as an example, but may be applied to various plasma apparatuses including an electron cyclotron resonance (ECR) type.

2 is a diagram schematically showing a semiconductor manufacturing facility 1 including a substrate processing apparatus 10 according to the present invention.

Referring to FIG. 2, the semiconductor manufacturing facility 1 includes a process facility 2, an Equipment Front End Module (EFEM) 3, and an interface wall 4. The plant front end module 3 is mounted in front of the process plant 2 to transfer the wafer W between the vessel (not shown) in which the wafers W are housed and the process plant 2. The facility front end module 3 has a plurality of loadports 60 and a frame 50. The frame 50 is located between the load port 60 and the process equipment 2. The container containing the wafer W is placed on the load port 60 by a transfer means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. Is put on. The container may be a closed container such as a front open unified pod (FOUP). In the frame 50, a frame robot 70 for transferring the wafer W is installed between the vessel placed in the load port 60 and the process facility 2. In the frame 50, a door opener (not shown) for automatically opening and closing the door of the container may be installed. In addition, the frame 50 may be provided with a fan filter unit (FFU) (not shown) for supplying clean air into the frame 50 so that clean air flows from the top to the bottom in the frame 50. .

The wafer W is subjected to a predetermined process in the process facility 20. The process facility 2 has a loadlock chamber 20, a transfer chamber 30, and a process chamber 10. The transfer chamber 30 has a generally polygonal shape when viewed from the top. The load lock chamber 20 or the process chamber 10 is located at the side of the transfer chamber 30. The loadlock chamber 20 is located on the side adjacent to the facility front end module 3 of the sides of the transfer chamber 30, and the process chamber 10 is located on the other side. The load lock chamber 20 includes a loading chamber 20a in which the wafers W flowing into the process facility 2 temporarily stay in order to proceed with the process, and wafers W exiting the process facility 2 after the process is completed. ) Has an unloading chamber 20b that temporarily stays. The interior of the transfer chamber 30 and the process chamber 10 is maintained at a vacuum, and the interior of the load lock chamber 20 is converted to a vacuum and atmospheric pressure. The load lock chamber 20 prevents foreign contaminants from entering the transfer chamber 30 and the process chamber 10. A gate valve (not shown) is installed between the load lock chamber 20 and the transfer chamber 30 and between the load lock chamber 20 and the facility front end module 3. When the wafer W moves between the facility front end module 3 and the load lock chamber 20, the gate valve provided between the load lock chamber 20 and the transfer chamber 30 is closed and the load lock chamber 20 is closed. When the wafer W is moved between the transfer chamber 30 and the transfer chamber 30, the gate valve provided between the load lock chamber 20 and the facility front end module 3 is closed.

The transfer robot 40 is mounted in the transfer chamber 30. The transfer robot 40 loads the wafer W into the process chamber 10 or unloads the wafer W from the process chamber 10. In addition, the transfer robot 40 transfers the wafer W between the process chamber 10 and the load lock chamber 20.

The process chamber 10 performs a process such as deposition or etching on the wafer W. Hereinafter, the process chamber 10 will be referred to as a substrate processing apparatus 10. Detailed description of the substrate processing apparatus 10 will be described later.

3 is a front view schematically showing a substrate processing apparatus 10 according to the present invention.

As shown in FIG. 3, the substrate processing apparatus 10 for performing a process on the wafer W includes a processing chamber 100.

In the present embodiment, the process performed using the substrate processing apparatus 10 is a deposition process, and hereinafter, a high density plasma chemical vapor deposition (HDPCVD) process will be described as an example. As previously seen, the high density plasma chemical vapor deposition process involves the deposition process of depositing a film in a gap formed between metal lines by forming a plasma of high density, and etching etching overhangs on the gap. etching) process. Overhangs growing at the top of the gap close the inlet of the gap to form voids in the gap. Thus, by removing overhangs through the etching process, voids are prevented from forming in the gap.

A support member 200 for supporting the wafer W is installed in the inner space of the processing chamber 100. The support member 200 includes a support plate 220, a drive shaft 240, a driver 260, and a controller 280. On the other hand, the biasing power may be applied to the support member 200 to guide the source gas in the plasma state to the wafer (W).

The wafer W is placed side by side with the support plate 220 on the support plate 220. A protective layer (not shown) may be formed on the upper surface of the support plate 220, and the protective layer may be a ceramic material including aluminum oxide (Al ₂ O ₃ ). The protective layer is provided to prevent the wafer W placed on the upper surface and the upper surface of the support plate 220 from reacting. Detailed description of the support plate 220 will be described later.

One end of the drive shaft 240 is connected to the lower portion of the support plate 220, and the other end of the drive shaft 240 is connected to the driver 260. The driver 260 is a rotating device including a motor, and generates a rotating force by a current applied from the outside. The generated rotation force is transmitted to the drive shaft 240, the drive shaft 240 rotates together with the support plate 220.

A sealing member 241 is provided between the drive shaft 240 and the bottom wall of the processing chamber 100. The sealing member 241 maintains the airtight inside the processing chamber 100 and at the same time helps the rotation of the drive shaft 240. The sealing member 241 includes a magnetic seal.

The driver 260 is connected to the controller 280, which controls the operation of the driver 260. The controller 280 may control all operations of the driver 260 including the rotation speed, the rotation amount, and the rotation direction of the driver 260.

Next, a passage 122 through which the wafer W may enter and exit is formed on the sidewall of the processing chamber 100. The wafer W enters into the processing chamber 100 through the passage 122 or exits to the outside of the processing chamber 100.

On the passage 122, a door 130 for opening and closing the passage 122 is installed. The door 130 is connected to the driver 132 and opens and closes the passage 122 while moving in a direction substantially perpendicular to the longitudinal direction of the passage 122 by the operation of the driver 132.

A plurality of exhaust holes 102 are formed in the bottom wall of the processing chamber 100, and exhaust lines 104 are connected to the exhaust holes 102, respectively. A pump (not shown) may be installed on the exhaust line 104. The exhaust lines 104 serve as a passage for discharging the gas inside the process chamber 100 to the outside. The reaction gas, the unreacted gas, and the reaction by-products generated inside the processing chamber 100 are discharged to the outside of the processing chamber 100 through the exhaust lines 104, and the pressure inside the processing chamber 100 is vacuumed. In order to maintain the gas, the gas inside the process chamber 100 may be discharged to the outside through the exhaust lines 104. The exhaust lines 104 are opened and closed by a valve 104a installed on the exhaust line 104.

A supply hole 108 is formed in the ceiling wall of the processing chamber 100, and a gas supply member 600 for supplying a source gas into the processing chamber 100 is connected to the supply hole 108. The gas supply member 600 supplies a source gas and a cleaning gas into the process chamber 100. The gas supply member 600 includes a gas supply line 620 and first and second supply lines 640 and 660 branched from the gas supply line 620. The gas supply line 620 is connected to the supply hole 108.

The cleaning gas flows inside the first supply line 640, and the first supply line 640 is opened and closed by a valve 640a. The cleaning gas includes nitrogen trifluoride (NF ₃ ) and argon (Ar). The cleaning gas is provided to clean the interior of the processing chamber 100 after the completion of the process. Source gas flows inside the second supply line 660, and the second supply line 660 is opened and closed by a valve 660a. The source gas is a silicon-containing gas comprising silane (SiH ₄ ) and an oxygen-containing gas comprising oxygen (O ₂ ). The cleaning gas is supplied into the process chamber 100 through the first supply line 640 and the gas supply line 620, and the source gas is supplied to the process chamber through the second supply line 660 and the gas supply line 620. 100 is supplied inside.

The plasma generating member 500 for generating plasma from the source gas supplied into the processing chamber 100 is installed on the sidewall of the processing chamber 100. The plasma generating member 500 includes a coil 520 and a coil fixture 540. The coil 520 surrounds the sidewall of the processing chamber 100, applies energy to the source gas supplied to the interior of the processing chamber 100, and the source gas is discharged by the applied energy (specifically, inductive coupling). It is radio frequency discharge for plasma type and microwave discharge for electron cyclotron resonance. The coil 520 is mounted inside and fixed to the coil fixture 540.

4 is a view illustrating the support plate 220 of FIG. As shown in FIG. 4, the support member 200 further includes a temperature control unit 300 for controlling the temperature of the support plate 220, and the temperature control unit 300 includes the heat transfer member 310 and the heat transfer member 310. One power source 380 is included. The support plate 220 is a rectangular plate, and the wafer W is placed on the support plate 220. At this time, the heat transfer member 310 is installed on the support plate 220, and adjusts the temperature of the wafer (W) placed on the support plate 220.

The heat transfer member 310 includes a plurality of first heat transfer members 312 and a plurality of second heat transfer members 314. The first heat transfer members 312 are generally arranged side by side from one side of the support plate 220 to the other side of the support plate 220, and the second heat transfer members 314 are adjacent to each other. 312). Therefore, as shown in FIG. 4, the heat transfer member 310 has a zigzag shape. The first power source 380 is connected to the lower plate 360 which will be described later.

The chucking electrode 420 is installed on the support plate 220. The chucking electrode 420 includes a circular electrode 422 and a plurality of bar electrodes 424. The circular electrode 422 is circular with respect to the center of the support plate 220, and the bar electrodes 424 extend from the circular electrode 422 generally side by side toward the inner side of the circular electrode 422. Accordingly, the first heat transfer members 312 and the rod electrodes 424 are alternately arranged. Meanwhile, the second power source 440 is connected to the circular electrode 422. In this case, the second power source 440 supplies DC power.

5A and 5B illustrate a state in which the temperature of the heat transfer member 310 of FIG. 4 is adjusted using the thermoelements 320, and FIGS. 6A and 6B illustrate the operation of the support member 200 of FIG. 3. It is a figure which shows the state. 5A and 5B are sectional views taken along the line II ′ of FIG. 4.

A plurality of thermoelements 320 are provided below the heat transfer member 310. The thermoelements 320 are heated or cooled by the Peltier effect. The Peltier effect refers to the phenomenon in which one junction cools and the other heats up when current flows in a circuit of two different metals, which changes the direction of cooling and heating.

The thermoelements 320 are arranged in parallel with the heat transfer member 310, and the N-type element 322 and the P-type element 324 are alternately disposed. Upper ends of the N-type element 322 and the P-type element 324 are connected by the upper plate 350, and lower ends of the N-type element 322 and the P-type element 324 are connected by the lower plate 360.

As shown in FIGS. 5A and 5B, the upper plate 350 is connected to the upper side of the thermoelements 320, and the lower plate 360 is connected to the lower side of the thermoelements 320. An upper end of the N-type element 322 is connected to one side of the upper plate 350, and an upper end of the P-type element 324 is connected to the other side of the upper plate 350. A lower end of the P-type element 324 connected to the other side of the upper plate 350 is connected to one side of the lower plate 360, and a new N-type element 322 is connected to the other side of the lower plate 360. The thermoelectric elements 320 alternately arranged on the support plate 220 are connected to each other by repetition of the upper plate 350 and the lower plate 360.

As seen above, the upper plate 350 and the lower plate 360 are cooled or heated by the Peltier effect. In this case, in order for the upper plate 350 and the lower plate 360 to be easily cooled or heated, it is preferable to use a material having a high heat transfer coeffcient. For the same reason, the heat transfer member 310 provided on the upper portion of the upper plate 350 is preferably made of a material having a high heat transfer coefficient.

The first power source 380 is connected to the lower plate 360 positioned at one end of the heat transfer member 310 and the lower plate 360 positioned at the other end of the heat transfer member 310. Accordingly, the thermoelements 320, the upper and lower plates 350 and 360, and the first power source 380 form one closed circuit. In this case, the first power supply 380 is preferably a DC power supplying current in one direction, and a separate switch (not shown) is a clockwise or counterclockwise direction of the current applied from the power supply 380. You can switch to

Hereinafter, a method of operating the temperature control unit 300 according to the present invention will be described with reference to FIGS. 5A to 5B.

As shown in FIG. 5A, a current is applied from the power supply 380. The applied current is applied to the N-type element 322 through the lower plate 360, to the P-type element 324 through the upper plate 350, and to the N-type element 322 through the lower plate 360. Is approved. Through this series of operations, current flows as shown in FIG. 5A.

When the current flows, when viewed based on the top plate 350, the current flows from the N-type element 322 to the P-type element 324, and the top plate 350 is cooled by the Peltier effect. Based on the lower plate 360, current flows from the P-type element 324 to the N-type element 322, and the lower plate 360 is heated by the Peltier effect.

Therefore, the upper plate 350 absorbs heat Q _in of the heat transfer member 310, and the lower plate 360 emits heat Q _out . Therefore, the wafer W placed on the heat transfer member 310 is cooled. 6A is a diagram illustrating a state in which the wafer W is cooled by using the first heat transfer member 312.

As shown in FIG. 5B, a current is applied from the power supply 380 in the opposite direction. The applied current is applied to the P-type element 324 through the lower plate 360, to the N-type element 322 through the upper plate 350, and to the P-type element 324 through the lower plate 360. do. Through this series of operations, current flows as shown in FIG. 5B.

When a current flows, the current flows from the N-type element 322 to the P-type element 324 based on the lower plate 360, and the lower plate 360 is cooled by the Peltier effect. Based on the top plate 350, current flows from the P-type element 324 to the N-type element 322, and the top plate 350 is heated by the Peltier effect.

Therefore, the lower plate 360 absorbs heat Q _in , and the upper plate 350 emits heat Q _out through the heat transfer member 310. Therefore, the wafer W placed on the heat transfer member 310 is heated.

On the other hand, when a current is applied from the second power source 440, the circular electrode 422 and the bar electrode 424 supplied with the DC power supply have a positive charge. In this case, the wafer W has a negative charge as opposed to the circular electrode 422 and the rod electrode 424. Accordingly, an electrostatic force is generated between the wafer W, the circular electrode 422, and the rod electrode 424, and the electrostatic force is a clamping force Fc capable of fixing the wafer W on the support plate 220. . 6B is a view showing the wafer W fixed on the support plate 220.

As described above, the wafer W may be cooled or heated in accordance with the direction of the current applied from the first power source 380. In particular, since the temperature of the wafer W is adjusted using a current, the temperature of the wafer W can be precisely controlled. In addition, the wafer W may be fixed on the support plate 220. Therefore, it does not require a separate clamp device and cooling or heating device, it is possible to simplify the configuration of the support plate 220. In addition, the footprint of the device can be reduced.

7 is a flowchart illustrating a substrate processing method according to the present invention, and FIG. 8 is a view illustrating a state in which the substrate processing apparatus 10 of FIG. 3 operates. Hereinafter, a substrate processing method according to the present invention will be described with reference to FIGS. 7 and 8.

First, the wafer W is loaded onto the support member 200 in the processing chamber 100 (S10). When the door 130 is opened by the driver 132, the wafer W is introduced into the process chamber 100 through the passage 122 and is placed on the support plate 220. As described above, the wafer W may be fixed on the support plate 220 by an electrostatic force.

Next, plasma is generated in the processing chamber 100 (S20). Specific methods for generating plasma are as follows. First, the source gas is supplied to the upper portion of the wafer W using the gas supply member 600. The source gas flowing in the second supply line 660 is supplied into the process chamber 100 through the gas supply line 620 and the supply hole 108. Next, the supplied source gas is discharged. When energy is applied to the inside of the processing chamber 100 using the coil 520, the energy is transferred to the upper portion of the wafer W through the sidewall of the processing chamber 100, and the source gas supplied to the upper portion of the wafer W is transferred. The discharge produces plasma from the source gas.

Next, a film is deposited in the gap of the wafer W using the generated plasma (S30). The resulting plasma is supplied onto the wafer W, and a film is deposited in the gap of the wafer W. Thereafter, as described above, etching is performed to remove the overhang grown on the gap, and when the etching is completed, the deposition process is repeated in the same manner. Through this method, the gap of the wafer W is filled.

Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.

According to the present invention, the wafer can be cooled or heated in accordance with the direction of the current applied from the power supply. In addition, the temperature of the wafer can be precisely controlled. In addition, the configuration of the support plate can be simplified. In addition, the footprint of the entire apparatus can be reduced.

Claims (8)

A support plate on which a substrate is placed on an upper surface; A heat transfer member installed on the support plate and adjusting a temperature of the substrate placed on the support plate; A plurality of thermoelectric elements connected to the heat transfer member and configured to control a temperature of the heat transfer member by a first power source applied from the outside; And And a chucking electrode installed on the support plate and chucking the substrate placed on the support plate by a second power source applied from the outside. The method of claim 1, The heat transfer member, A plurality of first heat transfer members disposed generally side by side; And And second heat transfer members respectively connecting the first heat transfer members adjacent to each other. The method of claim 2, The chucking electrode, A circular electrode disposed to be spaced apart from the center of the support plate; And It includes a plurality of rod electrodes extending toward the inside of the circular electrode from the circular electrode, And the first heat transfer member and the rod electrode are alternately disposed. The method of claim 1, The heat transfer member is a substrate support member, characterized in that the zigzag (zigzag) shape. A processing chamber providing an internal space in which a process for the substrate is performed; A substrate support member installed inside the processing chamber and supporting the substrate; A gas supply member supplying a source gas into the processing chamber; And Including a plasma generating member for generating a plasma from the source gas, The substrate support member, A support plate on which a substrate is placed on an upper surface; A heat transfer member installed on the support plate and adjusting a temperature of the substrate placed on the support plate; A plurality of thermoelectric elements connected to the heat transfer member and configured to control a temperature of the heat transfer member by a first power source applied from the outside; And And a chucking electrode installed on the support plate and chucking the substrate placed on the support plate by a second power source applied from the outside. The method of claim 5, The heat transfer member, A plurality of first heat transfer members disposed generally side by side; And And second heat transfer members respectively connecting the first heat transfer members adjacent to each other. The method of claim 6, The chucking electrode, A circular electrode disposed to be spaced apart from the center of the support plate; And It includes a plurality of rod electrodes extending toward the inside of the circular electrode from the circular electrode, And the first heat transfer member and the rod electrode are alternately disposed. The method of claim 5, The heat transfer member is a substrate processing apparatus, characterized in that the zigzag (zigzag) shape.

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